Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026825
Shariful Islam, Farzana Rahmat Zaki, M. Faisal
In this paper the optimal allocation of fiber Bragg grating (FBG) as a dispersion compensator in the presence of group velocity dispersion (GVD) and third-order dispersion (TOD) has been examined. The optimization is performed by varying the compensator arrangements and span length. Four different arrangements are considered-pre-configuration, post-configuration, mid-configuration and bi-end configuration. Span length is varied from 30 to 120 km. At the receiver, Q-factor and bit error rate (BER) have been systematically compared for standard single mode fiber (SSMF) and non-zero dispersion-shifted fiber (NZDSF). The results show that NZDSF based long-haul lightwave communication system with mid compensated scheme provides better performance at 160-Gb/s.
{"title":"Dispersion optimization of 160-Gb/s 2000-km transmission by appropriate orientation of chirped fiber Bragg grating","authors":"Shariful Islam, Farzana Rahmat Zaki, M. Faisal","doi":"10.1109/ICECE.2014.7026825","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026825","url":null,"abstract":"In this paper the optimal allocation of fiber Bragg grating (FBG) as a dispersion compensator in the presence of group velocity dispersion (GVD) and third-order dispersion (TOD) has been examined. The optimization is performed by varying the compensator arrangements and span length. Four different arrangements are considered-pre-configuration, post-configuration, mid-configuration and bi-end configuration. Span length is varied from 30 to 120 km. At the receiver, Q-factor and bit error rate (BER) have been systematically compared for standard single mode fiber (SSMF) and non-zero dispersion-shifted fiber (NZDSF). The results show that NZDSF based long-haul lightwave communication system with mid compensated scheme provides better performance at 160-Gb/s.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114230238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026883
Md. Alamgir Hossain, Md. Raju Ahmed
In this paper, lightning induced overvoltage on DC cables of solar power panel, which was laid on the ground and an underground level with proper insulation thickness, was investigated when a lightning strike at a nearby place and its proper protection scheme was verified. The result shows that on ground cable voltage is approximately 28.83% more than that of the underground cable having soil resistivity 100Ω-m. Moreover, when soil resistivity increases to 1000Ω-m then the underground cable voltage is less about 48.50% than that of the on ground cable. The induced voltage caused by lightning electromagnetic interference on DC cables of solar power system at power conditioning subsystem (PCS) is analysed using electromagnetic field analysis approach. The FDTD method was applied to calculate induced voltage. Virtual Surge Test Lab (VSTL) is used for FDTD calculations, which solve Maxwell's electromagnetic equations with least approximations. The model of solar power system was represented with thin wires.
{"title":"Study and protection of lightning overvoltage on DC cables of solar power generation","authors":"Md. Alamgir Hossain, Md. Raju Ahmed","doi":"10.1109/ICECE.2014.7026883","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026883","url":null,"abstract":"In this paper, lightning induced overvoltage on DC cables of solar power panel, which was laid on the ground and an underground level with proper insulation thickness, was investigated when a lightning strike at a nearby place and its proper protection scheme was verified. The result shows that on ground cable voltage is approximately 28.83% more than that of the underground cable having soil resistivity 100Ω-m. Moreover, when soil resistivity increases to 1000Ω-m then the underground cable voltage is less about 48.50% than that of the on ground cable. The induced voltage caused by lightning electromagnetic interference on DC cables of solar power system at power conditioning subsystem (PCS) is analysed using electromagnetic field analysis approach. The FDTD method was applied to calculate induced voltage. Virtual Surge Test Lab (VSTL) is used for FDTD calculations, which solve Maxwell's electromagnetic equations with least approximations. The model of solar power system was represented with thin wires.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114534095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026833
Rashad Kabir, M. M. Haque, M. Rahaman
The Bit Error Rate(BER) and theoretical channel capacity of OCDMA transmission has been analyzed in this paper for M-ary chip symbol. A comparison has also been made between uniform and non-uniform signalling and the result shows that channel capacity is increased for the same number of active users if the modulation level or bits per OCDMA symbol is increased for non-uniform. Finally SNR and BER simulation result has been shown for both uniform and non-uniform M-ary OCDMA transmission system in presence of Self Phase Modulation and dispersion. The simulation result shows that unlike conventional OCDMA system better performance can be achieved using M-ary Chip Symbol.
{"title":"Channel capacity and Bit Error Rate analysis of non-uniform type M-ary optical CDMA in presence of Self Phase Modulation and dispersion","authors":"Rashad Kabir, M. M. Haque, M. Rahaman","doi":"10.1109/ICECE.2014.7026833","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026833","url":null,"abstract":"The Bit Error Rate(BER) and theoretical channel capacity of OCDMA transmission has been analyzed in this paper for M-ary chip symbol. A comparison has also been made between uniform and non-uniform signalling and the result shows that channel capacity is increased for the same number of active users if the modulation level or bits per OCDMA symbol is increased for non-uniform. Finally SNR and BER simulation result has been shown for both uniform and non-uniform M-ary OCDMA transmission system in presence of Self Phase Modulation and dispersion. The simulation result shows that unlike conventional OCDMA system better performance can be achieved using M-ary Chip Symbol.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115463371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026885
Arif Ahmed, M. Moinuddin, U. M. Al-Saggaf
Kalman filter and its variants are well known for the static and dynamic state estimation of power systems because of their accuracies. These adaptive filters generally employed for estimation purposes require high computational power when it comes to real time estimation. Therefore, in this paper we propose a computationally light yet effective estimation algorithm based on state space model which have not yet been applied to the problem of power system estimation. We propose the use of state space least mean square algorithms for the purpose of state estimation considering the problem of a two phase permanent magnet synchronous motor. The algorithms have been employed successfully in this paper in the state estimation of the highly non linear synchronous motor. We investigate the problem in the presence of Gaussian noise to show the novelty of the algorithms. Moreover, these algorithms are compared with the state estimation performance of the non linear Extended Kalman filter.
{"title":"State space least mean square for state estimation of synchronous motor","authors":"Arif Ahmed, M. Moinuddin, U. M. Al-Saggaf","doi":"10.1109/ICECE.2014.7026885","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026885","url":null,"abstract":"Kalman filter and its variants are well known for the static and dynamic state estimation of power systems because of their accuracies. These adaptive filters generally employed for estimation purposes require high computational power when it comes to real time estimation. Therefore, in this paper we propose a computationally light yet effective estimation algorithm based on state space model which have not yet been applied to the problem of power system estimation. We propose the use of state space least mean square algorithms for the purpose of state estimation considering the problem of a two phase permanent magnet synchronous motor. The algorithms have been employed successfully in this paper in the state estimation of the highly non linear synchronous motor. We investigate the problem in the presence of Gaussian noise to show the novelty of the algorithms. Moreover, these algorithms are compared with the state estimation performance of the non linear Extended Kalman filter.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122030874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026882
Tasnova Alam Jesha, M. Iqbal
In this paper a design of a low cost data logger to log temperature and power consumption in a house is presented. The designed data logger is capable of logging four AC current and two temperature measurements. It is based on a low cost microcontroller PIC18F4550. Microcontroller is programmed using Mikrobasic. The circuit displays temperature measurements on an LCD display and all measurements are also stored in separate files on a sd card. Power consumption of two houses was logged for one year using a sampling time of 2 minutes. The data stored in a sd card is used for further analysis. This paper also presents design of data logger and a detailed analysis of energy consumption of two houses based on collected data. Data analysis indicates power consumption pattern and its variation over a year. Analysis indicates that the logged data and monthly data collected by the utility company give similar energy consumption.
{"title":"Data logging and energy consumption analysis of two houses in St. John's, Newfoundland","authors":"Tasnova Alam Jesha, M. Iqbal","doi":"10.1109/ICECE.2014.7026882","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026882","url":null,"abstract":"In this paper a design of a low cost data logger to log temperature and power consumption in a house is presented. The designed data logger is capable of logging four AC current and two temperature measurements. It is based on a low cost microcontroller PIC18F4550. Microcontroller is programmed using Mikrobasic. The circuit displays temperature measurements on an LCD display and all measurements are also stored in separate files on a sd card. Power consumption of two houses was logged for one year using a sampling time of 2 minutes. The data stored in a sd card is used for further analysis. This paper also presents design of data logger and a detailed analysis of energy consumption of two houses based on collected data. Data analysis indicates power consumption pattern and its variation over a year. Analysis indicates that the logged data and monthly data collected by the utility company give similar energy consumption.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122068611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026963
S. Khan, M. S. Hossain, F. Rahman, R. Zaman, M. O. Hossen, Q. Khosru
Since the fabrication of first III-V Gate-All-Around (GAA) MOSFET it is under extensive research, as it is one of the potential candidates to replace the state of art tri-gate FinFETs, to continue progressive scaling. In this work, transport characterization of experimentally demonstrated gate-all-around (GAA) InxGa1-xAs nanowire MOSFET in near-ballistic regime is performed using 3D self-consistent Schrödinger-Poisson solver based on Uncoupled Mode Space approach, taking wave function penetration and other quantum mechanical effects into account. The effects of channel length variation on transport characteristics are also examined.
{"title":"Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET","authors":"S. Khan, M. S. Hossain, F. Rahman, R. Zaman, M. O. Hossen, Q. Khosru","doi":"10.1109/ICECE.2014.7026963","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026963","url":null,"abstract":"Since the fabrication of first III-V Gate-All-Around (GAA) MOSFET it is under extensive research, as it is one of the potential candidates to replace the state of art tri-gate FinFETs, to continue progressive scaling. In this work, transport characterization of experimentally demonstrated gate-all-around (GAA) InxGa1-xAs nanowire MOSFET in near-ballistic regime is performed using 3D self-consistent Schrödinger-Poisson solver based on Uncoupled Mode Space approach, taking wave function penetration and other quantum mechanical effects into account. The effects of channel length variation on transport characteristics are also examined.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122072691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026980
A. Chowdhury, P. Sarker, K. Rafiqul Islam, Syeda Tahsina Tanjil
Reliability of power transmission corridor is of great importance for the reliability of the bulk power system. Any intermediate substation in the transmission corridor affects its reliability. Studies have been done on reliability of substation in isolation but its effect on transmission corridor has not been studied. Studies on transmission line reliability have also been carried out, but they focused on system connectivity neglecting reaction of system protection. This paper studies the reliability of a transmission corridor with intermediate substation having different configurations. Event tree analysis has been adopted for the purpose. The effect of substation configuration on reliability of the transmission corridor, both qualitatively and quantitatively, is analysed and compared.
{"title":"Effect of intermediate substation configurations on reliability of power transmission corridor","authors":"A. Chowdhury, P. Sarker, K. Rafiqul Islam, Syeda Tahsina Tanjil","doi":"10.1109/ICECE.2014.7026980","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026980","url":null,"abstract":"Reliability of power transmission corridor is of great importance for the reliability of the bulk power system. Any intermediate substation in the transmission corridor affects its reliability. Studies have been done on reliability of substation in isolation but its effect on transmission corridor has not been studied. Studies on transmission line reliability have also been carried out, but they focused on system connectivity neglecting reaction of system protection. This paper studies the reliability of a transmission corridor with intermediate substation having different configurations. Event tree analysis has been adopted for the purpose. The effect of substation configuration on reliability of the transmission corridor, both qualitatively and quantitatively, is analysed and compared.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122642769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026880
Qingyun Ma, Laxmi Ray, M. Haider
In this paper, a wireless power transfer system for implantable medical devices using a miniaturized 3 mm diameter single arm circular spiral antenna is presented. The transmission characteristics, S21 between the transmitting and receiving antennas with air and tissue as a medium between antennas are analyzed and measured. The receiver antenna receives almost 2 mW average power with power transfer efficiency of 53%. The power transfer efficiency could still reach to 4% with 274 μW average received power, with placement of 1.5 cm tissue and 1 cm air in between two antennas. With one PN diode rectifier, the total DC power from the receiver side is 489 nW.
{"title":"A miniaturized spiral antenna for energy harvesting of implantable medical devices","authors":"Qingyun Ma, Laxmi Ray, M. Haider","doi":"10.1109/ICECE.2014.7026880","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026880","url":null,"abstract":"In this paper, a wireless power transfer system for implantable medical devices using a miniaturized 3 mm diameter single arm circular spiral antenna is presented. The transmission characteristics, S21 between the transmitting and receiving antennas with air and tissue as a medium between antennas are analyzed and measured. The receiver antenna receives almost 2 mW average power with power transfer efficiency of 53%. The power transfer efficiency could still reach to 4% with 274 μW average received power, with placement of 1.5 cm tissue and 1 cm air in between two antennas. With one PN diode rectifier, the total DC power from the receiver side is 489 nW.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123963507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026842
M. N. Alam, M. Islam, Md.R. Islam
Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.
{"title":"Ballistic performance comparison of InGaSb and InAsSb XOI nFET","authors":"M. N. Alam, M. Islam, Md.R. Islam","doi":"10.1109/ICECE.2014.7026842","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026842","url":null,"abstract":"Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125108327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-01DOI: 10.1109/ICECE.2014.7026851
Ayed Al Sayem, Arif Shahriar, M. Mahdy, Md. Saifur Rahman
In graphene dielectric multilayer structure, a very interesting phenomena such as epsilon near zero property rises naturally. However, this epsilon near zero property (along with the proper control of chemical potential and gate voltage) of graphene multi-layer stack has not been used so far to make novel photonic switches. In this article, we have shown theoretically that in graphene-dielectric stack, which acts as an anisotropic metamaterial, full control of reflection and so transmission of light at a specific wavelength or frequency can be controlled very simply by external gate voltage. This external voltage tunes the chemical potential and so the parallel permittivity of the anisotropic structure. Our theoretical prediction may pave the way to novel voltage control photonic logic switches, which may play as an intermediate solution before entering into all optical commercial switches (as current silicon and electron based CMOS technology is facing a dead end).
{"title":"Control of reflection through epsilon near zero graphene based anisotropic metamaterial","authors":"Ayed Al Sayem, Arif Shahriar, M. Mahdy, Md. Saifur Rahman","doi":"10.1109/ICECE.2014.7026851","DOIUrl":"https://doi.org/10.1109/ICECE.2014.7026851","url":null,"abstract":"In graphene dielectric multilayer structure, a very interesting phenomena such as epsilon near zero property rises naturally. However, this epsilon near zero property (along with the proper control of chemical potential and gate voltage) of graphene multi-layer stack has not been used so far to make novel photonic switches. In this article, we have shown theoretically that in graphene-dielectric stack, which acts as an anisotropic metamaterial, full control of reflection and so transmission of light at a specific wavelength or frequency can be controlled very simply by external gate voltage. This external voltage tunes the chemical potential and so the parallel permittivity of the anisotropic structure. Our theoretical prediction may pave the way to novel voltage control photonic logic switches, which may play as an intermediate solution before entering into all optical commercial switches (as current silicon and electron based CMOS technology is facing a dead end).","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129513760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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