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Flip chip interconnect of 2.5-watt CPW power amplifier MMIC 2.5瓦CPW功率放大器MMIC倒装互连
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394598
C. Pao, W. Wong, W.D. Gray, C. Liu, D.C. Wang, C.P. Wen
A monolithic X-band coplanar waveguide power amplifier utilizing high yield flip chip interconnect technology has been designed and fabricated. A peak power of 2.5 watts with a power added efficiency better than 24% at 8 GHz has been achieved.<>
设计并制作了一种采用高产量倒装芯片互连技术的单片x波段共面波导功率放大器。峰值功率为2.5瓦,功率增加效率优于8 GHz时的24%。
{"title":"Flip chip interconnect of 2.5-watt CPW power amplifier MMIC","authors":"C. Pao, W. Wong, W.D. Gray, C. Liu, D.C. Wang, C.P. Wen","doi":"10.1109/EPEP.1993.394598","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394598","url":null,"abstract":"A monolithic X-band coplanar waveguide power amplifier utilizing high yield flip chip interconnect technology has been designed and fabricated. A peak power of 2.5 watts with a power added efficiency better than 24% at 8 GHz has been achieved.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126842970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Calculation of multi-port parameters of electronic packages using a general purpose electromagnetics code 用通用电磁代码计算电子封装的多端口参数
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394596
Barry J. Rubin, S. Daijavad
A powerful code developed by the authors to solve radiation and scattering problems from arbitrary 3D dielectric-conductor structures is modified to provide the terminal characteristics of arbitrary package structures. By incorporating a general de-embedding procedure to eliminate end effects, Y- and S-parameters can be obtained for 3D transmission-line structures; other parameters such as the C and L matrices can also be obtained. Results for microstrip twin-tee and mesh-plane structures are presented and compared with results already in the literature.<>
作者开发了一个功能强大的程序,用于解决任意三维介质导体结构的辐射和散射问题,以提供任意封装结构的终端特性。通过引入一般的去嵌入程序来消除末端效应,可以获得三维传输在线结构的Y和s参数;其他参数,如C和L矩阵也可以得到。给出了微带双三通结构和网格平面结构的结果,并与已有文献的结果进行了比较。
{"title":"Calculation of multi-port parameters of electronic packages using a general purpose electromagnetics code","authors":"Barry J. Rubin, S. Daijavad","doi":"10.1109/EPEP.1993.394596","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394596","url":null,"abstract":"A powerful code developed by the authors to solve radiation and scattering problems from arbitrary 3D dielectric-conductor structures is modified to provide the terminal characteristics of arbitrary package structures. By incorporating a general de-embedding procedure to eliminate end effects, Y- and S-parameters can be obtained for 3D transmission-line structures; other parameters such as the C and L matrices can also be obtained. Results for microstrip twin-tee and mesh-plane structures are presented and compared with results already in the literature.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123810299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Modeling of power/ground plane noise in high speed digital electronics packaging 高速数字电子封装中功率/地平面噪声建模
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394553
J. Fang, Y. Liu, Y. Chen, Z. Wu, A. Agrawal
A new model for the simulation of power/ground plane noise which is simple in principle, accurate in its solutions, and applicable to various levels of high-speed digital electronics packaging, is given. It is found that one can obtain accurate modeling of delta-I noise in power and ground planes without resorting to full-wave electromagnetic modeling. Sample results of the simulated delta-I noise with the method are shown.<>
提出了一种原理简单、求解准确、适用于各级高速数字电子封装的电源/地平面噪声仿真新模型。研究发现,无需采用全波电磁建模,就可以获得功率面和地面上的δ - 1噪声的精确建模。给出了用该方法模拟δ - 1噪声的示例结果。
{"title":"Modeling of power/ground plane noise in high speed digital electronics packaging","authors":"J. Fang, Y. Liu, Y. Chen, Z. Wu, A. Agrawal","doi":"10.1109/EPEP.1993.394553","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394553","url":null,"abstract":"A new model for the simulation of power/ground plane noise which is simple in principle, accurate in its solutions, and applicable to various levels of high-speed digital electronics packaging, is given. It is found that one can obtain accurate modeling of delta-I noise in power and ground planes without resorting to full-wave electromagnetic modeling. Sample results of the simulated delta-I noise with the method are shown.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121276063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Crosstalk as an attenuation mechanism in coupled microstrip transmission lines 耦合微带传输线中的串扰衰减机制
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394550
M. Bruns, S. Pepper
Crosstalk contributes to attenuation and signal degradation on microwave transmission lines in addition to coupling signals between lines. Crosstalk is compared as an attenuation mechanism with skin effect and dielectric loss for coupled microstrip lines.<>
在微波传输线上,串扰除了造成线间信号的耦合外,还会造成信号的衰减和退化。将串扰作为一种具有集肤效应和介电损耗的耦合微带线衰减机制进行了比较。
{"title":"Crosstalk as an attenuation mechanism in coupled microstrip transmission lines","authors":"M. Bruns, S. Pepper","doi":"10.1109/EPEP.1993.394550","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394550","url":null,"abstract":"Crosstalk contributes to attenuation and signal degradation on microwave transmission lines in addition to coupling signals between lines. Crosstalk is compared as an attenuation mechanism with skin effect and dielectric loss for coupled microstrip lines.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124343499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Power distribution modelling of high performance first level computer packages 高性能一级计算机封装的功率分布建模
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394554
Wendy S. Becker, B. McCredie, G. Wilkins, A. Iqbal
A methodology for obtaining a model of the power distribution of a computer package is presented. This model is suitable for determining the noise and aiding in the design of a computer package. The physical features of a typical first-level multi-layered computer package is shown. Semiconductor chips and decoupling capacitors are placed on the top surface of the package and the module is connected to a board or card for communication with other components of the computer. A schematic of the final inductance model of a multi-layered ceramic single chip module used in computer products is shown.<>
提出了一种计算计算机封装功率分布模型的方法。该模型适用于噪声的确定和计算机封装的设计。给出了典型的第一级多层计算机封装的物理特征。半导体芯片和去耦电容器放置在封装的上表面,模块连接到电路板或卡上,以便与计算机的其他组件通信。给出了一种用于计算机产品的多层陶瓷单芯片模块的最终电感模型示意图。
{"title":"Power distribution modelling of high performance first level computer packages","authors":"Wendy S. Becker, B. McCredie, G. Wilkins, A. Iqbal","doi":"10.1109/EPEP.1993.394554","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394554","url":null,"abstract":"A methodology for obtaining a model of the power distribution of a computer package is presented. This model is suitable for determining the noise and aiding in the design of a computer package. The physical features of a typical first-level multi-layered computer package is shown. Semiconductor chips and decoupling capacitors are placed on the top surface of the package and the module is connected to a board or card for communication with other components of the computer. A schematic of the final inductance model of a multi-layered ceramic single chip module used in computer products is shown.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125632285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
An integral equation approach to the prediction of the capacitance and the inductance of a via through-hole 用积分方程法预测通孔的电容和电感
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394571
P. Kok, D. De Zutter
A quasi-static method is described for calculating the excess capacitance and inductance of via's. The considered via geometry contains connecting strips, pads on the via, and finite ground plane thickness. The influence of the pad size and the size of the ground plane opening on the via capacitance, inductance and impedance is examined.<>
描述了一种准静态计算过孔电容和电感的方法。考虑的通孔几何结构包括连接条、通孔上的焊盘和有限的地平面厚度。考察了焊盘尺寸和接地平面开口尺寸对通孔电容、电感和阻抗的影响。
{"title":"An integral equation approach to the prediction of the capacitance and the inductance of a via through-hole","authors":"P. Kok, D. De Zutter","doi":"10.1109/EPEP.1993.394571","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394571","url":null,"abstract":"A quasi-static method is described for calculating the excess capacitance and inductance of via's. The considered via geometry contains connecting strips, pads on the via, and finite ground plane thickness. The influence of the pad size and the size of the ground plane opening on the via capacitance, inductance and impedance is examined.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114306585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A guaranteed stable order reduction algorithm for packaging and interconnect simulation 一种保证稳定的封装与互连仿真降阶算法
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394563
L. Silveira, I. Elfadel, J. White
A state-space algorithm for model-order reduction based on the balancing of a system realization is presented, with the important characteristic that the reduced order model is guaranteed to be stable. Results are presented demonstrating that the balanced-realization approach generates accurate, stable models, whereas the Pade method is unstable.<>
提出了一种基于系统实现平衡性的模型降阶状态空间算法,该算法具有保证降阶模型稳定的重要特点。结果表明,平衡实现方法生成准确、稳定的模型,而Pade方法则不稳定。
{"title":"A guaranteed stable order reduction algorithm for packaging and interconnect simulation","authors":"L. Silveira, I. Elfadel, J. White","doi":"10.1109/EPEP.1993.394563","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394563","url":null,"abstract":"A state-space algorithm for model-order reduction based on the balancing of a system realization is presented, with the important characteristic that the reduced order model is guaranteed to be stable. Results are presented demonstrating that the balanced-realization approach generates accurate, stable models, whereas the Pade method is unstable.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128262049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Shielding effect of a diaphragm in a packaged microstrip circuit 封装微带电路中膜片的屏蔽效应
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394597
H.-H. Chen, S. Chung
The shielding effect of a diaphragm in a packaged microstrip line is analyzed using the mode-matching method together with the method of lines. The influence of the width and the depth of the diaphragm on the scatterings of the dominant-mode and higher-order-mode incidences is analyzed and compared.<>
采用模式匹配法和线路法分析了封装微带线路中膜片的屏蔽效应。分析比较了膜片的宽度和深度对主模和高阶模散射的影响。
{"title":"Shielding effect of a diaphragm in a packaged microstrip circuit","authors":"H.-H. Chen, S. Chung","doi":"10.1109/EPEP.1993.394597","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394597","url":null,"abstract":"The shielding effect of a diaphragm in a packaged microstrip line is analyzed using the mode-matching method together with the method of lines. The influence of the width and the depth of the diaphragm on the scatterings of the dominant-mode and higher-order-mode incidences is analyzed and compared.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128780073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A new three dimensional finite difference time domain (3D-FDTD) simulator for modelling electronic interconnections and packaging 一种新的三维时域有限差分(3D-FDTD)模拟器,用于模拟电子互连和封装
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394582
L.X. Lu, C. Wu, J. Litva
It has been shown that the finite difference time domain (FDTD) method is an accurate and flexible technique to simulate complex electromagnetic problems. A 3D-FDTD software package is introduced. It can be used to simulate electronic packaging problems from an electromagnetic field point of view.<>
结果表明,时域有限差分法是一种精确、灵活的模拟复杂电磁问题的方法。介绍了一种三维时域有限差分软件包。它可以从电磁场的角度来模拟电子封装问题
{"title":"A new three dimensional finite difference time domain (3D-FDTD) simulator for modelling electronic interconnections and packaging","authors":"L.X. Lu, C. Wu, J. Litva","doi":"10.1109/EPEP.1993.394582","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394582","url":null,"abstract":"It has been shown that the finite difference time domain (FDTD) method is an accurate and flexible technique to simulate complex electromagnetic problems. A 3D-FDTD software package is introduced. It can be used to simulate electronic packaging problems from an electromagnetic field point of view.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126832168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrical packaging requirements for low voltage ICs-3.3 V High Performance CMOS devices as a case study 低压ic -3.3 V高性能CMOS器件的电气封装要求作为案例研究
Pub Date : 1993-10-20 DOI: 10.1109/EPEP.1993.394604
R. Senthinathan, A. Mehra, M. Mahalingam, Y. Doi, H. Astrain
Summary form only given, as follows. High performance CMOS device technology for 5 V and 3.3 V operations is discussed. Off-chip package delays and simultaneous switching noise (SSN) are selected as metrics to evaluate the impact due to packaging. Devices are housed in quad flat packages (QFPs) and pin grid array (PGAs) packages. With 3.3 V supply, to have a computationally comparable system, device sizes need to be changed to obtain similar current drive. Devices are scaled to achieve similar and enhanced performance for reduced supply voltage. Maintaining computational throughput (CTP) introduces comparable noise levels for 5 V and 3.3 V operations. This increases the probability of false switching in 3.3 V operation. Noise levels for lesser, comparable, and faster CTP 3.3-V packaged devices are given. False switching for 3.3 V operation is analyzed using receiver dynamic noise immunity (DNI). Trends in overall noise-to-signal ratio for further reduced supply voltages are given.<>
仅给出摘要形式,如下。讨论了5v和3.3 V工作的高性能CMOS器件技术。片外封装延迟和同时开关噪声(SSN)被选为衡量封装影响的指标。器件被封装在四平面封装(QFPs)和引脚网格阵列(PGAs)封装中。使用3.3 V电源,要获得计算上可比较的系统,需要改变器件尺寸以获得相似的电流驱动。在降低电源电压的情况下,对器件进行缩放以实现类似的增强性能。维持计算吞吐量(CTP)在5 V和3.3 V操作时引入了相当的噪声水平。这增加了3.3 V操作中误开关的概率。给出了更小、可比较和更快的CTP 3.3 v封装器件的噪声水平。利用接收机动态抗扰度(DNI)分析了3.3 V工作时的误开关。给出了进一步降低电源电压时总体信噪比的趋势。
{"title":"Electrical packaging requirements for low voltage ICs-3.3 V High Performance CMOS devices as a case study","authors":"R. Senthinathan, A. Mehra, M. Mahalingam, Y. Doi, H. Astrain","doi":"10.1109/EPEP.1993.394604","DOIUrl":"https://doi.org/10.1109/EPEP.1993.394604","url":null,"abstract":"Summary form only given, as follows. High performance CMOS device technology for 5 V and 3.3 V operations is discussed. Off-chip package delays and simultaneous switching noise (SSN) are selected as metrics to evaluate the impact due to packaging. Devices are housed in quad flat packages (QFPs) and pin grid array (PGAs) packages. With 3.3 V supply, to have a computationally comparable system, device sizes need to be changed to obtain similar current drive. Devices are scaled to achieve similar and enhanced performance for reduced supply voltage. Maintaining computational throughput (CTP) introduces comparable noise levels for 5 V and 3.3 V operations. This increases the probability of false switching in 3.3 V operation. Noise levels for lesser, comparable, and faster CTP 3.3-V packaged devices are given. False switching for 3.3 V operation is analyzed using receiver dynamic noise immunity (DNI). Trends in overall noise-to-signal ratio for further reduced supply voltages are given.<<ETX>>","PeriodicalId":338671,"journal":{"name":"Proceedings of IEEE Electrical Performance of Electronic Packaging","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122491285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
期刊
Proceedings of IEEE Electrical Performance of Electronic Packaging
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