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2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)最新文献

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SEU Characterization of the Microsemi PolarFire Field Programmable Gate Array Functional Blocks using Proton Irradiation Microsemi偏振火场可编程门阵列功能块的质子辐照SEU表征
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679336
Jacob Waskowic, D. Hiemstra, S. Shi, Li Chen
SEU cross-sections of certain functional blocks of the Microsemi PolarFire FPGA were tested under proton radiation. Suitability for a low earth radiation environment is considered.
在质子辐射下测试了Microsemi PolarFire FPGA的某些功能块的SEU截面。考虑了低地球辐射环境的适用性。
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引用次数: 0
Thermal-to-high-energy neutron SEU characterization of commercial SRAMs 商用sram的热-高能中子SEU特性
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679344
A. Coronetti, R. G. Alía, M. Letiche, C. Cazzaniga, M. Kastriotou, M. Cecchetto, K. Biłko, P. Martín-Holgado
Several commercial SRAMs have been tested by the CERN R2E project with neutrons of various energy. The test data are used to cross-compare facilities and to analyze variabilities within SRAMs from the same manufacturer. FIT for atmospheric and ground applications are provided as well as predictions for accelerator soft error rates.
欧洲核子研究中心R2E项目已经用不同能量的中子测试了几种商用sram。测试数据用于交叉比较设备和分析来自同一制造商的sram的可变性。提供了大气和地面应用的FIT以及加速器软错误率的预测。
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引用次数: 4
SEE Test Results for SAMA5D3 参见SAMA5D3的测试结果
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679349
S. Guertin, Trevor Turchan, A. Daniel
ARM processors power a class of high-performance, lower power system on a chip devices. In the absence of radiation effects, these devices are highly desirable for space use. The processor core architecture for ARM devices is licensed to provide computing on multiple hardware platforms. The A5 processor is in a unique pioneering space for providing detailed radiation response data to explore the baseline performance of these devices. These data can help set options for ARM processors and possibly impact design choices for the next generation of ARM fault tolerance capabilities. The SAMA5D3 was tested to establish general SEE performance for a relatively simple implementation of the ARM A5 core. This testing observed SRAM sensitivity starting at an LET of about 3 MeV-cm2/mg, with a saturated cross section of about 2×10-8cm2/bit, and this was determined by both active write and read of the caches, in addition to the use of a debugger to provide test results. Crash/SEFI data was collected using both Linux and bare metal C-code. The onset LET for crashes was about LET 1.5 MeV-cm2/mg, with saturated cross sections of about 2×10-5cm2 for bare metal (low utilization), and 2×10-4cm2 for Linux (high utilization) tests.
ARM处理器为一类高性能、低功耗系统芯片设备提供动力。在没有辐射效应的情况下,这些装置非常适合在太空中使用。ARM设备的处理器核心架构被许可在多个硬件平台上提供计算。A5处理器是在一个独特的开拓空间,提供详细的辐射响应数据,以探索这些设备的基准性能。这些数据可以帮助设置ARM处理器的选项,并可能影响下一代ARM容错功能的设计选择。对SAMA5D3进行了测试,以建立相对简单的ARM A5核心实现的通用SEE性能。该测试观察到SRAM灵敏度从约3 MeV-cm2/mg的LET开始,饱和横截面约为2×10-8cm2/bit,这是由缓存的主动写入和读取决定的,此外还使用调试器来提供测试结果。Crash/SEFI数据是使用Linux和裸机c代码收集的。崩溃的起始LET约为LET 1.5 MeV-cm2/mg,裸机(低利用率)测试的饱和横截面约为2×10-5cm2, Linux(高利用率)测试的饱和横截面约为2×10-4cm2。
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引用次数: 0
BJTs in Space: ELDRS Experiment on NASA Space Environment Testbed 空间BJTs: NASA空间环境试验台ELDRS实验
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679350
A. Benedetto, H. Barnaby, Cheyenne Cook, M. Campola, Anna Tender
Flight data on bipolar junction transistors (BJTs) are recorded and the effects of low dose rate space irradiation on BJTs are characterized, leading to results comparable to ground-based testing. Additionally, Gummel plots of mission data are compared for different experimental parameters.
记录了双极结晶体管(BJTs)的飞行数据,并分析了低剂量率空间辐照对双极结晶体管的影响,得到了与地面试验相当的结果。此外,还比较了不同实验参数下任务数据的Gummel图。
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引用次数: 4
Single Event Latchup (SEL) and Single Event Upset (SEU) Evaluation of Xilinx 7nm Versal™ ACAP programmable logic (PL) Xilinx 7nm Versal™ACAP可编程逻辑(PL)的单事件锁定(SEL)和单事件中断(SEU)评估
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679343
P. Maillard, Yanran P. Chen, Jeff Barton, M. Voogel
this paper examines the single-event latchup (SEL) and single event upset (SEU) response of the Xilinx 7nm XCVC1902 ES1 Versal ACAP Programmable Logic irradiated with neutrons and 64 MeV protons sources. No SEL was observed in the entire Xilinx 7nm XCVC1092 for worst case conditions. Furthermore, The SEU response for single-event upsets on configuration RAM (CRAM) cells, block RAM (BRAM) and block RAM (BRAM) cells are provided.
本文研究了Xilinx 7nm XCVC1902 ES1 Versal ACAP可编程逻辑器件在中子和64mev质子源辐照下的单事件闭锁(SEL)和单事件扰动(SEU)响应。在最坏的情况下,在整个Xilinx 7nm XCVC1092中没有观察到SEL。此外,还提供了配置RAM (CRAM)单元、块RAM (BRAM)和块RAM (BRAM)单元上的单事件中断的SEU响应。
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引用次数: 4
Response of a 22FDX® Radiation-Hardened-by-Design Test Chip to TID and SEE 22FDX®辐射强化测试芯片对TID和SEE的响应
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679324
William Rice, Marlon Marquez, Tejinder Jaswal, Salvatore Caruso, Armando Rivera Gil
A custom-designed test chip built on Global Foundries 22FDX® technology was investigated for its response to TID and SEE environments. While measurements of the performance for the technology in a first design match well with some reported results from prior testing, the use of a second custom radiation-hardened design demonstrated a significant 6x improvement in the per-bit cross section for a shift register test structure.
研究了基于Global Foundries 22FDX®技术的定制测试芯片对TID和SEE环境的响应。虽然该技术在第一个设计中的性能测量结果与之前的一些测试结果吻合良好,但使用第二个定制的辐射硬化设计表明,移位寄存器测试结构的每比特横截面显著提高了6倍。
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引用次数: 0
Single Event Effects Testing of a Vertical Optocoupler with Unmodified Packaging 未修改封装的垂直光耦合器单事件效应测试
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679354
L. Ryder, Thomas A. Carstens, A. Phan, C. Seidlick, M. Campola
Single event effects measurements were conducted on a ACPL-785E optocoupler at NASA Space Radiation Laboratory. Measurements with a periodic input signal show single event transients and a radiation-induced time delay of the output signal.
在NASA空间辐射实验室对ACPL-785E光耦合器进行了单事件效应测量。测量与周期输入信号显示单事件瞬态和辐射诱导的输出信号的时间延迟。
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引用次数: 1
Compendium of Radiation Effects Test Results from NASA Goddard Space Flight Center 美国宇航局戈达德太空飞行中心辐射效应试验结果汇编
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679325
Alyson D. Topper, M. Casey, E. Wilcox, M. Campola, Donna J. Cochran, M. O’Bryan, J. Pellish, Peter J. Majewicz
Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, and bipolar devices.
进行了总电离剂量、位移损伤剂量和单事件效应测试,以表征和确定候选电子设备对NASA空间利用的适用性。测试的器件包括光电子、数字、模拟和双极器件。
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引用次数: 2
Radiation Test Results of Total Ionizing Dose, Enhanced Low Dose Rate Sensitivity, and Neutron Displacement Damage for the Micropac JANSR4N49BU and JANSR4N49U Optocouplers Micropac JANSR4N49BU和JANSR4N49U光耦合器总电离剂量、增强低剂量率灵敏度和中子位移损伤的辐射测试结果
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679338
Yonghua Liu, Bob Spitzer, David Young, Mike Tsecouras, Bob Campanini
This paper reports radiation test results of Total Ionizing Dose (TID) at High Dose Rate (HDR) and Enhanced Low Dose Rate Sensitivity (ELDRS), as well as neutron displacement damage (NDD) for the Micropac JANSR4N49BU and JANSR4N49U optocouplers.
本文报道了Micropac JANSR4N49BU和JANSR4N49U光耦合器在高剂量率(HDR)和增强低剂量率灵敏度(ELDRS)下的总电离剂量(TID)和中子位移损伤(NDD)测试结果。
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引用次数: 1
Heavy Ion and Proton Test Results for Recent-Generation GPUs 最新一代gpu的重离子和质子测试结果
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679339
I. Troxel, Justin J. Schaefer, Matthew Gruber, Daniel Sabogal, David Ellis, J. Schaf, Gates West
Destructive SEE, proton-induced TID, and heavy ion and proton non-destructive SEE sensitivity characterization results are presented for recent-generation AMD and NVIDIA GPU SOCs.
介绍了最新一代AMD和NVIDIA GPU soc的破坏性SEE,质子诱导的TID以及重离子和质子非破坏性SEE灵敏度表征结果。
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引用次数: 4
期刊
2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
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