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Effect of NaBH4 loading and reduction temperature on defect-driven CO2 photoreduction over TiO2 负载NaBH4和还原温度对TiO2上缺陷驱动CO2光还原的影响
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2026-01-01 DOI: 10.1016/j.apsadv.2025.100925
Rudolf Ricka , Agnieszka Wanag , Ewelina Kusiak-Nejman , Martin Reli , Miroslava Filip Edelmannová , Marcin Łapinski , Grzegorz Słowik , Antoni W. Morawski , Kamila Kočí
This study investigates the role of defect engineering in enhancing TiO2-based photocatalysts for CO2 photoreduction through a systematically controlled synthesis. In contrast to previous reports focused on Ti3+ doping of commercial TiO2, here we combine sol–gel synthesis with post-synthetic chemical reduction using sodium borohydride (NaBH4) to obtain TiO2 materials with tunable concentrations of surface defects, specifically oxygen vacancies and Ti3+ sites. By varying both the reduction temperature and NaBH4 dosage, we introduce a new level of control over defect formation. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), nitrogen physisorption, and photoelectrochemical measurements. Photocatalytic performance was assessed via CO2 photoreduction under UV–vis irradiation. The sample reduced at 350 °C with 1.5 g NaBH4 showed the highest activity and selectivity toward CH4 and CO, clearly surpassing the performance of commercial TiO2 (P25) and a sol–gel reference without chemical reduction (W-TiO₂_350 °C). The improved performance is attributed to a synergistic balance of Ti3+ sites, oxygen vacancies, and surface hydroxyls, which enhance charge separation and CO2 activation. This work introduces new synthesis–structure–activity relationships and demonstrates the potential of defect-tuned TiO2 materials for efficient and selective CO2 valorization.
本研究通过系统控制合成,探讨了缺陷工程在增强二氧化钛基光还原CO2光催化剂中的作用。与以往的报道不同,我们将溶胶-凝胶合成与合成后的化学还原相结合,利用硼氢化钠(NaBH4)获得了表面缺陷浓度可调的TiO2材料,特别是氧空位和Ti3+位点。通过改变还原温度和NaBH4用量,我们引入了对缺陷形成的新水平的控制。采用x射线衍射(XRD)、拉曼光谱(Raman spectroscopy)、透射电子显微镜(TEM)、x射线光电子能谱(XPS)、氮的物理吸附和光电化学测量对材料进行了表征。在紫外-可见照射下通过CO2光还原评价光催化性能。用1.5 g NaBH4在350°C下还原的样品对CH4和CO的活性和选择性最高,明显优于商用TiO2 (P25)和未经化学还原的溶胶-凝胶对照物(w - tio_2 _350°C)。性能的提高是由于Ti3+位、氧空位和表面羟基的协同平衡,从而增强了电荷分离和CO2活化。这项工作介绍了新的合成-结构-活性关系,并证明了缺陷调谐TiO2材料在高效和选择性CO2增值方面的潜力。
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引用次数: 0
Molecular layer deposited metalcone hybrid layers for solvent-resistant nanofiltration membranes: surface wetting and permeation 耐溶剂纳滤膜的分子层沉积金属锥杂化层:表面润湿和渗透
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2026-01-01 DOI: 10.1016/j.apsadv.2025.100922
Harpreet Sondhi , Tom Kramberg , Arian Nijmeijer , Fred Roozeboom , Serena Gabrielli , Mikhael Bechelany , Alexey Kovalgin , Mieke W.J. Luiten-Olieman
Solvent-resistant nanofiltration (SRNF) has emerged as a promising alternative to conventional distillation for removing impurities, recovering solutes, and regenerating solvents from diluted process streams. For most industries, such as the pharmaceutical and (petro)chemical industry, the key important factor here is energy-efficiency gain. This study investigates the physicochemical properties of metalcone hybrid layers, such as layer thickness, composition, and layer-solvent interactions. It also utilizes surface-silanization to increase the hydrophobicity of these layers, grown on both planar silicon and 3D-porous ceramic substrates. Using the molecular layer deposition (MLD) technique, vapor-phase titanium tetra-chloride and trimethyl-aluminum are employed as precursors, with ethylene glycol as a co-reactant for nanopore fabrication and methyltrimethoxysilane for surface-silanization. MLD layers were deposited at 125°C and 150°C, followed by annealing in air and nitrogen (N2) at 250°C and 350°C. The resulting SRNF membranes demonstrated high chemical stability in polar and non-polar solvents, as well as in water-solvent mixtures, maintaining permeation rates after 48 hours of continuous exposure. Furthermore, after surface-silanization and enhanced hydrophobicity, the n-hexane permeance was tripled for surface-silanized titanicone and doubled for alucone hybrid layers compared to the unsilanized hybrid layers. Conversely, demineralized water permeance decreased. The SRNF membranes, with pore diameters of <2 nm, show a >90% rejection for polyethylene glycol molecular sizes >390 Dalton. The final n-hexane permeance of surface-silanized, air- and N2-annealed metalcone hybrid layer membranes was >10 L·m⁻2·hr⁻1·bar⁻1. These results demonstrate the versatility of MLD as a technology ready for further developing membranes towards large-scale industrial applications.
耐溶剂纳滤(SRNF)已成为传统蒸馏去除杂质、回收溶质和从稀释的工艺流中再生溶剂的有前途的替代方法。对于大多数行业,如制药和(石油)化工行业,这里的关键因素是能源效率的提高。本文研究了金属锥杂化层的物理化学性质,如层厚度、组成和层与溶剂的相互作用。它还利用表面硅化来增加这些层的疏水性,这些层生长在平面硅和3d多孔陶瓷衬底上。采用分子层沉积(MLD)技术,以气相四氯化钛和三甲基铝为前驱体,以乙二醇为共聚物制备纳米孔,甲基三甲氧基硅烷为表面硅烷化剂。在125°C和150°C下沉积MLD层,然后在250°C和350°C的空气和氮气中退火。所得到的SRNF膜在极性和非极性溶剂以及水-溶剂混合物中表现出很高的化学稳定性,在连续暴露48小时后保持渗透速率。此外,经过表面硅化和疏水性增强后,表面硅化的二氧化钛层的正己烷渗透率比未硅化的杂化层提高了两倍,铝酮杂化层的正己烷渗透率提高了一倍。相反,脱矿水渗透率降低。孔径为2 nm的SRNF膜对分子量为390道尔顿的聚乙二醇的去除率为90%。表面硅化,空气和氮气退火的金属锥杂化层膜的最终正己烷渗透率为10 L·m⁻2·hr⁻1·bar⁻1。这些结果证明了MLD作为一种技术的多功能性,为进一步开发大规模工业应用的膜做好了准备。
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引用次数: 0
Fabrication of a multijunction nitride-based Ti1.33N@BiVO4/GdIn2Se3 MXene heterostructure with enhanced optoelectronic and photoelectrochemical properties 具有增强光电电化学性能的多结氮基Ti1.33N@BiVO4/GdIn2Se3 MXene异质结构的制备
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2026-01-01 DOI: 10.1016/j.apsadv.2025.100921
Majahekupheleni Malati , Bonginkosi Thango , Thulane Paepae , Nkosinathi Gule , Langelihle Dlamini
A dual interfacial heterojunction of 2D-2D Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with enhanced photocatalytic properties was prepared. Microscopic images showed a 2D GdIn2Se3 sheet sandwiching a decahedron and a tetragonal bipyramidal (010) exposed facet of BiVO4, covered by 2D Ti1.33 N MXene nanosheets. The XRD data and HR-TEM analysis confirmed the successful fabrication of a multijunctional heterostructure. The optical studies showed a visible-light (460 to 550 nm) active Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with suppressed charge carrier recombination. The Ti1.33N@BiVO4/GdIn2Se3 composite realised a Schottky junction and S-scheme dual charge transfer mechanism. A Schottky junction was realised at the BiVO4@Ti1.33Ninterface, and at the GdIn2Se3/BiVO4 interface, an S-scheme pathway is observed. In agreement with the multijunction formation, the photoelectrochemical studies (EIS, OCVD, and PCR) showed an improvement in the charge carrier properties of the ternary composite. A low charge transfer resistance of 323Ω and a high charge carrier density of 1.08×1021 cm−3 were achieved in the Ti1.33N@BiVO4/GdIn2Se3 composite.
制备了具有增强光催化性能的2D-2D Ti1.33N@BiVO4/GdIn2Se3光催化剂的双界面异质结。显微图像显示,二维GdIn2Se3薄片夹在一个十面体和一个四边形双锥体(010)暴露的BiVO4表面上,被二维Ti1.33 N MXene纳米薄片覆盖。XRD数据和HR-TEM分析证实了多结异质结构的成功制备。光学研究表明,具有抑制载流子复合的可见光(460 ~ 550 nm)活性Ti1.33N@BiVO4/GdIn2Se3光催化剂。Ti1.33N@BiVO4/GdIn2Se3复合材料实现了Schottky结和S-scheme双电荷转移机制。在BiVO4@Ti1.33Ninterface处实现了肖特基结,在GdIn2Se3/BiVO4界面处观察到S-scheme通路。与多结形成一致,光电化学研究(EIS, OCVD和PCR)表明三元复合材料的载流子性质有所改善。在Ti1.33N@BiVO4/GdIn2Se3复合材料中获得了低电荷转移电阻323Ω和高电荷载流子密度1.08×1021 cm−3。
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引用次数: 0
Etching resistance and particle suppression behavior of Y₂O₃–ZrO₂ composite coatings in fluorine-based plasma 氟基等离子体中Y₂O₃-ZrO₂复合涂层的耐蚀性和粒子抑制行为
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2026-01-01 DOI: 10.1016/j.apsadv.2025.100926
Gyutae Park , Hyunho Yang , Minjin Lee , Kiin Choi , Hyun S. Kum
<div><div>Yttrium oxide (Y₂O₃) coatings serve as essential barrier layers for protecting chamber surfaces from plasma-induced erosion and contamination during dry etching in semiconductor and display fabrication. With increasing device complexity and elevated plasma power conditions, the demand for enhanced coating performance has intensified to support stable processing and high production yields. Accordingly, there is growing interest in coating systems that can sustain harsh plasma etching while maintaining a clean processing environment.</div><div>In this study, Y₂O₃–ZrO₂ composite coatings (hereafter referred to as YZ coatings) were fabricated via atmospheric plasma spraying (APS), and their durability was evaluated through a 10-hour plasma etching process conducted in an 8.6-generation industrial ICP system operated with a CF₄/O₂/Ar gas mixture.</div><div>Key durability metrics— maximum etch depth, mass change, reaction layer degradation, and ion elution—were quantitatively assessed. To evaluate dissolved ion release after plasma etching, Y ion concentrations (measured by ICP-OES) and Zr ion concentrations (measured by ICP-MS) in the ultrasonic cleaning solution were analyzed for high-sensitivity detection.</div><div>The Y₂O₃–ZrO₂ composite coatings (hereafter referred to as YZ coatings) exhibited a 13% shallower maximum etch depth (4306.9 nm) compared to conventional Y₂O₃ (4946.96 nm), along with a reduction in total ionic elution by approximately 19% (from 2.13 mg/kg to 1.73 mg/kg). These improvements are attributed to the dual stabilizing effects of Zr addition, namely mechanical reinforcement of the microstructure and chemical stabilization via preferential Zr–F bonding, which suppresses excessive Y–F formation.</div><div>XPS analysis confirmed that Zr⁴⁺ incorporation modified the surface chemistry by forming stable Zr–F bonds, which suppressed excessive Y–F bond formation and reduced fluorine incorporation.</div><div>This effect can be explained by the smaller ionic radius (0.84 Å vs. 1.02 Å) and higher electronegativity (1.33 vs. 1.22) of Zr⁴⁺ compared to Y³⁺, which enhance its affinity for F⁻ ions and promote selective fluorination, thereby stabilizing the reaction layer.</div><div>The smaller ionic radius of Zr⁴⁺ leads to shorter Zr–F bond lengths, resulting in stronger bonding and enhanced near-surface mechanical integrity. In addition, the higher electronegativity of Zr⁴⁺ favors stronger ionic–covalent interactions with fluorine, reducing the volatility of fluoride species and improving chemical stability at the surface.</div><div>As a result, the YZ composite coating effectively suppresses plasma-induced material degradation and ion release, contributing to improved process stability and reduced chamber contamination under prolonged fluorine-based plasma etching conditions. These findings highlight the industrial significance of Zr-modified Y₂O₃ coatings for advanced semiconductor and display manufacturing environments.</div></di
氧化钇(Y₂O₃)涂层是必不可少的屏障层,用于保护腔室表面在半导体和显示器制造过程中免受等离子体诱导的侵蚀和污染。随着器件复杂性的增加和等离子体功率条件的提高,对增强涂层性能的需求已经增强,以支持稳定的加工和高产量。因此,人们对能够承受苛刻的等离子蚀刻同时保持清洁加工环境的涂层系统越来越感兴趣。在这项研究中,通过大气等离子喷涂(APS)制备了Y₂O₃-ZrO₂复合涂层(以下简称YZ涂层),并通过在8.6代工业ICP系统中使用CF₄/O₂/Ar气体混合物进行10小时的等离子蚀刻工艺来评估其耐久性。关键耐久性指标-最大蚀刻深度,质量变化,反应层降解和离子洗脱-进行了定量评估。为了评估等离子体刻蚀后溶解离子的释放,对超声清洗液中Y离子浓度(ICP-OES)和Zr离子浓度(ICP-MS)进行了高灵敏度检测。与传统的Y₂O₃(4946.96 nm)相比,Y₂O₃-ZrO₂复合涂层(以下简称YZ涂层)的最大蚀刻深度(4306.9 nm)浅了13%,总离子洗涤量减少了大约19%(从2.13 mg/kg降至1.73 mg/kg)。这些改善归因于Zr的双重稳定作用,即机械强化微观结构和通过Zr - f优先键合抑制过量Y-F形成的化学稳定作用。XPS分析证实,Zr⁴⁺通过形成稳定的Zr - f键修饰了表面化学性质,抑制了过量的Y-F键形成,减少了氟的掺入。这种效应可以用Zr⁴⁺比Y³⁺具有更小的离子半径(0.84 Å vs. 1.02 Å)和更高的电负性(1.33 vs. 1.22)来解释,这增强了它对F⁻的亲和力,促进了选择性氟化,从而稳定了反应层。Zr⁴⁺的离子半径越小,Zr - f键的长度越短,从而形成更强的键合,增强了近表面的机械完整性。此外,Zr⁴⁺较高的电负性有利于与氟更强的离子共价相互作用,减少氟化物的挥发性,提高表面的化学稳定性。因此,YZ复合涂层有效地抑制了等离子体诱导的材料降解和离子释放,有助于提高工艺稳定性,减少长时间氟基等离子体蚀刻条件下的腔室污染。这些发现突出了zr修饰的Y₂O₃涂层在先进半导体和显示器制造环境中的工业意义。
{"title":"Etching resistance and particle suppression behavior of Y₂O₃–ZrO₂ composite coatings in fluorine-based plasma","authors":"Gyutae Park ,&nbsp;Hyunho Yang ,&nbsp;Minjin Lee ,&nbsp;Kiin Choi ,&nbsp;Hyun S. Kum","doi":"10.1016/j.apsadv.2025.100926","DOIUrl":"10.1016/j.apsadv.2025.100926","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Yttrium oxide (Y₂O₃) coatings serve as essential barrier layers for protecting chamber surfaces from plasma-induced erosion and contamination during dry etching in semiconductor and display fabrication. With increasing device complexity and elevated plasma power conditions, the demand for enhanced coating performance has intensified to support stable processing and high production yields. Accordingly, there is growing interest in coating systems that can sustain harsh plasma etching while maintaining a clean processing environment.&lt;/div&gt;&lt;div&gt;In this study, Y₂O₃–ZrO₂ composite coatings (hereafter referred to as YZ coatings) were fabricated via atmospheric plasma spraying (APS), and their durability was evaluated through a 10-hour plasma etching process conducted in an 8.6-generation industrial ICP system operated with a CF₄/O₂/Ar gas mixture.&lt;/div&gt;&lt;div&gt;Key durability metrics— maximum etch depth, mass change, reaction layer degradation, and ion elution—were quantitatively assessed. To evaluate dissolved ion release after plasma etching, Y ion concentrations (measured by ICP-OES) and Zr ion concentrations (measured by ICP-MS) in the ultrasonic cleaning solution were analyzed for high-sensitivity detection.&lt;/div&gt;&lt;div&gt;The Y₂O₃–ZrO₂ composite coatings (hereafter referred to as YZ coatings) exhibited a 13% shallower maximum etch depth (4306.9 nm) compared to conventional Y₂O₃ (4946.96 nm), along with a reduction in total ionic elution by approximately 19% (from 2.13 mg/kg to 1.73 mg/kg). These improvements are attributed to the dual stabilizing effects of Zr addition, namely mechanical reinforcement of the microstructure and chemical stabilization via preferential Zr–F bonding, which suppresses excessive Y–F formation.&lt;/div&gt;&lt;div&gt;XPS analysis confirmed that Zr⁴⁺ incorporation modified the surface chemistry by forming stable Zr–F bonds, which suppressed excessive Y–F bond formation and reduced fluorine incorporation.&lt;/div&gt;&lt;div&gt;This effect can be explained by the smaller ionic radius (0.84 Å vs. 1.02 Å) and higher electronegativity (1.33 vs. 1.22) of Zr⁴⁺ compared to Y³⁺, which enhance its affinity for F⁻ ions and promote selective fluorination, thereby stabilizing the reaction layer.&lt;/div&gt;&lt;div&gt;The smaller ionic radius of Zr⁴⁺ leads to shorter Zr–F bond lengths, resulting in stronger bonding and enhanced near-surface mechanical integrity. In addition, the higher electronegativity of Zr⁴⁺ favors stronger ionic–covalent interactions with fluorine, reducing the volatility of fluoride species and improving chemical stability at the surface.&lt;/div&gt;&lt;div&gt;As a result, the YZ composite coating effectively suppresses plasma-induced material degradation and ion release, contributing to improved process stability and reduced chamber contamination under prolonged fluorine-based plasma etching conditions. These findings highlight the industrial significance of Zr-modified Y₂O₃ coatings for advanced semiconductor and display manufacturing environments.&lt;/div&gt;&lt;/di","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"31 ","pages":"Article 100926"},"PeriodicalIF":8.7,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145925641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Adhesion between a borophane sheet and a metal substrate by interface bonding 硼玻璃片与金属基板之间通过界面粘合而形成的粘合
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-12-16 DOI: 10.1016/j.apsadv.2025.100918
Kazuki Yamaguchi , Heming Yin , Masahito Niibe , Jingmin Tang , Masashige Miyamoto , Yuki Tsujikawa , Haruto Sakurai , Yu Murano , Kenichi Ozawa , Masafumi Horio , Jun-ichi Yamaura , Takahiro Kondo , Iwao Matsuda
Boron deposited on transition metal substrates has been actively investigated as a system that exhibits a wide range of surface structures. However, the specific case of nickel substrates remains largely unexplored. Nickel boride is used as a tribological material with excellent wear resistance and as a catalyst for hydrogenation, and its synthesis methods, structure, and functionality are being vigorously investigated. In this study, borophane, a two-dimensional material composed of hydrogen and boron, was heated to 300 °C in contact with a nickel substrate. We found that, compared with that annealed at 100 °C, annealed at 300 °C had a color that shifted toward longer wavelengths, and no longer dissolved in the synthesis solvent. However, x-ray diffraction and Fourier-transform infrared spectroscopy revealed no significant differences between the borophane samples annealed at 100 and 300 °C. X-ray absorption spectroscopy and x-ray photoelectron spectroscopy revealed that the surface oxide of nickel was reduced by borophane, resulting in the formation of nickel boride. Furthermore, thermal desorption spectroscopy showed that hydrogen desorbed from borophane upon contact with nickel, revealing that the borophane–nickel interface consisted of nickel boride and boron oxide layers. These findings provide insight into the surface science of boron on transition metal substrates and for the development of functional materials using these systems.
硼作为一种具有多种表面结构的体系,沉积在过渡金属衬底上已经得到了积极的研究。然而,镍衬底的具体情况在很大程度上仍未被探索。硼化镍作为一种具有优异耐磨性的摩擦学材料和氢化催化剂,其合成方法、结构和功能等方面的研究正在蓬勃发展。在这项研究中,硼烷是一种由氢和硼组成的二维材料,与镍衬底接触,加热到300℃。我们发现,与100°C退火的相比,300°C退火的颜色向更长的波长偏移,并且不再溶解在合成溶剂中。然而,x射线衍射和傅里叶变换红外光谱显示,在100°C和300°C退火的硼烷样品之间没有显著差异。x射线吸收光谱和x射线光电子能谱显示,镍的表面氧化物被硼烷还原,形成硼化镍。此外,热解吸光谱显示,硼磷石与镍接触后,氢被解吸,表明硼磷石-镍界面由硼化镍和氧化硼层组成。这些发现为过渡金属基板上硼的表面科学以及使用这些系统开发功能材料提供了见解。
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引用次数: 0
Efficient electrosynthesis of Nylon monomeric precursors from the electrocatalytic adiponitrile reduction over the defect-rich NiOx/Ni modified electrode 富缺陷NiOx/Ni修饰电极上电催化己腈还原高效电合成尼龙单体前驱体
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-12-12 DOI: 10.1016/j.apsadv.2025.100919
Chia-Hui Yen , Shih-Ching Huang , Tzh-Hsuan Wang , Wei-Che Tsai , Yan-Gu Lin , Chia Yu Lin
Electrocatalytic adiponitrile reduction (e-ADNRR) using water as the proton source for the synthesis of 6-aminocapronitrile and hexamethylenediamine, the respective monomeric precursors for Nylon 6 and Nylon 6,6, serves as a green and sustainable alternative to traditional thermocatalytic hydrogenation counterparts. The efficient e-ADNRR relies on the development of robust electrocatalysts that readily expedite the kinetics of e-ADNRR while suppressing the competing hydrogen evolution reaction. Herein, we report on a nickel submicron-particulate film-modified electrode (Ti|microNi), containing defective NiOx and metallic nickel, that exhibits high performance towards e-ADNRR under environmentally benign conditions. The effects of electrode preparation conditions (e.g., electrodeposition current) and electrosynthetic conditions (e.g., electrolyte pH, ADN concentration, and concentration of quaternary alkyl ammonium salt) were systematically investigated through a series of controlled-current electrolysis. Ni2+ centers in the defective NiOx are low-coordinated and have a pyramidal (NiO5) symmetry with an oxygen vacancy in the octahedral position. Analysis of the mechanism underlying e-ADNRR at the developed Ti|microNi electrode reveals that e-ADNRR involves the direct electron transfer from the Ti|microNi electrode to ADN molecules, generating reduced intermediates that are subsequently protonated by nearby water molecules. Under optimal conditions, the developed Ti|microNi electrode was demonstrated, for the first time, to exhibit a remarkably high overall product current efficiency (∼98.5 %) at industrially relevant current (-100 mA cm−2) at near-neutral pH without using any organic cosolvent, which eliminates the risk of adiponitrile decomposition and avoids the additional energy consumption associated with the use of organic cosolvents. Overall, this study presents a novel strategy for designing high-performance electrocatalysts for efficient e-ADNRR and related organic electrosynthetic processes.
电催化己二腈还原(e-ADNRR)以水为质子源合成尼龙6和尼龙6,6的单体前体- 6-氨基己二腈和六亚甲二胺,是传统热催化加氢反应的绿色可持续替代品。高效的e-ADNRR依赖于强大的电催化剂的发展,这些电催化剂容易加速e-ADNRR的动力学,同时抑制竞争性的析氢反应。在此,我们报道了一种含有缺陷NiOx和金属镍的镍亚微米颗粒膜修饰电极(Ti|microNi),该电极在环境友好的条件下对e-ADNRR表现出高性能。通过一系列控流电解,系统考察了电极制备条件(如电沉积电流)和电合成条件(如电解液pH、ADN浓度和季烷基铵盐浓度)的影响。缺陷NiOx中的Ni2+中心是低配位的,具有锥体对称(NiO5),在八面体位置有一个氧空位。对制备的Ti|微电极上的e-ADNRR机制的分析表明,e-ADNRR涉及从Ti|微电极到ADN分子的直接电子转移,产生还原中间体,这些中间体随后被附近的水分子质子化。在最佳条件下,所开发的Ti|microNi电极首次在接近中性的pH值下,在工业相关电流(-100 mA cm - 2)下表现出非常高的整体产品电流效率(~ 98.5%),而不使用任何有机共溶剂,这消除了己二腈分解的风险,避免了与使用有机共溶剂相关的额外能量消耗。总的来说,本研究为高效的e-ADNRR和相关的有机电合成工艺设计高性能电催化剂提供了一种新的策略。
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引用次数: 0
Optimization of Zr concentration in HZO-based charge trap layers for enhanced flash memory performance 优化基于hzo的电荷阱层中Zr浓度以增强闪存性能
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-12-12 DOI: 10.1016/j.apsadv.2025.100914
Sang Hyeok Kim , Donghyun Kim , Inkyu Yoon , Somi Lee , Yunhye Jang , Lae Hyeong Jeong , Seunggyu Lee , Jiyong Woo , Jae Woo Lee
This study investigates the effect of Zr concentration in HZO thin films for application as charge trap layers (CTL) in charge trap flash (CTF) memory devices. Non-ferroelectric HZO thin films with various Zr concentrations are deposited using atomic layer deposition, and their material and electrical properties are analyzed. Increasing Zr concentration narrows the bandgap and increases oxygen vacancies. The low-frequency noise and dielectric breakdown measurements reveal that higher Zr concentrations result in increased trap density but a reduced breakdown electric field. This indicates a trade-off between improved charge storage capability and the reliability of HZO in CTL applications.
Subsequently, CTF devices incorporating HZO-based CTLs are fabricated to evaluate memory performance. The device with 10% Zr achieves the widest memory window (1.96 V), excellent endurance over 106 program/erase cycles (5.35 % memory window reduction rate), and retention after 106 s (15.9 % memory window reduction rate). In contrast, the device with 20% Zr exhibits degraded erase efficiency due to excessive trap density, resulting in a reduced memory window. These results demonstrate that a Zr concentration of 10% in HZO-based CTL is the optimized composition for flash memory performance, delivering superior memory window, endurance, and retention characteristics essential for reliable CTF memory.
本文研究了Zr浓度对HZO薄膜作为电荷阱层(CTL)应用于电荷阱闪存(CTF)存储器件的影响。采用原子层沉积法制备了不同Zr浓度的非铁电HZO薄膜,并对其材料性能和电学性能进行了分析。Zr浓度的增加使带隙变窄,氧空位增加。低频噪声和介质击穿测量表明,较高的Zr浓度导致陷阱密度增加,但击穿电场减小。这表明了在CTL应用中改进的电荷存储能力和HZO可靠性之间的权衡。随后,合成了基于hzo的CTF器件来评估内存性能。当Zr为10%时,器件获得了最宽的存储窗口(1.96 V), 106个程序/擦除周期(5.35%的存储窗口减少率)的优异耐久性,106 s后的保留率(15.9%的存储窗口减少率)。相比之下,具有20% Zr的器件由于陷阱密度过高而导致擦除效率下降,从而导致内存窗口减少。这些结果表明,Zr浓度为10%的hzo基CTL是闪存性能的优化组合,具有优异的记忆窗口,耐久性和保持特性,是可靠的CTF存储器所必需的。
{"title":"Optimization of Zr concentration in HZO-based charge trap layers for enhanced flash memory performance","authors":"Sang Hyeok Kim ,&nbsp;Donghyun Kim ,&nbsp;Inkyu Yoon ,&nbsp;Somi Lee ,&nbsp;Yunhye Jang ,&nbsp;Lae Hyeong Jeong ,&nbsp;Seunggyu Lee ,&nbsp;Jiyong Woo ,&nbsp;Jae Woo Lee","doi":"10.1016/j.apsadv.2025.100914","DOIUrl":"10.1016/j.apsadv.2025.100914","url":null,"abstract":"<div><div>This study investigates the effect of Zr concentration in HZO thin films for application as charge trap layers (CTL) in charge trap flash (CTF) memory devices. Non-ferroelectric HZO thin films with various Zr concentrations are deposited using atomic layer deposition, and their material and electrical properties are analyzed. Increasing Zr concentration narrows the bandgap and increases oxygen vacancies. The low-frequency noise and dielectric breakdown measurements reveal that higher Zr concentrations result in increased trap density but a reduced breakdown electric field. This indicates a trade-off between improved charge storage capability and the reliability of HZO in CTL applications.</div><div>Subsequently, CTF devices incorporating HZO-based CTLs are fabricated to evaluate memory performance. The device with 10% Zr achieves the widest memory window (1.96 V), excellent endurance over 10<sup>6</sup> program/erase cycles (5.35 % memory window reduction rate), and retention after 10<sup>6</sup> s (15.9 % memory window reduction rate). In contrast, the device with 20% Zr exhibits degraded erase efficiency due to excessive trap density, resulting in a reduced memory window. These results demonstrate that a Zr concentration of 10% in HZO-based CTL is the optimized composition for flash memory performance, delivering superior memory window, endurance, and retention characteristics essential for reliable CTF memory.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"31 ","pages":"Article 100914"},"PeriodicalIF":8.7,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biofunctionalization of SLM Ti–40Nb alloy through hydroxyapatite-modified plasma electrolytic oxidation coating 羟基磷灰石改性等离子体电解氧化涂层对SLM Ti-40Nb合金的生物功能化研究
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-12-11 DOI: 10.1016/j.apsadv.2025.100917
Shangavi Subramanian , Kesavan Praveenkumar , Nagumothu Rameshbabu , Kuppusamy Lokeshraj , Ansheed Raheem , Jayamani Jayaraj , Konda Gokuldoss Prashanth
This study reports the successful development of bioactive coatings on in-situ alloyed Ti-40Nb substrates fabricated via selective laser melting (SLM) using plasma electrolytic oxidation (PEO). Two electrolytes were employed for PEO processing: phosphate–silicate (PS) and phosphate–silicate–hydroxyapatite (PSHA). A comparative evaluation was performed to investigate the influence of electrolyte composition on surface morphology, corrosion resistance, and biological performance. The incorporation of hydroxyapatite (HAp) in the PSHA electrolyte significantly modified the coating structure, resulting in reduced porosity, increased surface roughness, and enhanced wettability. X-ray diffraction analysis confirmed the formation of TiO₂ (anatase and rutile) and Nb₂O₅ phases, with a higher rutile fraction observed in the HAp-incorporated coatings due to intensified plasma discharges. Electrochemical testing in simulated body fluid (SBF) demonstrated improved corrosion resistance for the HAp-containing samples, as evidenced by lower corrosion current density and passivation current values. In vitro assays with MC3T3 pre-osteoblast cells further revealed superior cell viability and proliferation on the HAp-incorporated coatings, attributed to the synergistic effects of roughened topography and the sustained release of bioactive ions. Overall, the PEO-modified Ti40Nb samples exhibited enhanced corrosion protection and cytocompatibility, underscoring their strong potential as next-generation Ti-based orthopedic implant materials.
本研究报道了采用等离子体电解氧化(PEO)法制备的选择性激光熔化(SLM)原位合金Ti-40Nb衬底生物活性涂层的成功开发。PEO加工采用两种电解质:磷酸硅酸盐(PS)和磷酸硅酸盐-羟基磷灰石(PSHA)。对比评价了电解液组成对表面形貌、耐腐蚀性和生物性能的影响。羟基磷灰石(HAp)在PSHA电解质中的掺入显著改变了涂层结构,导致孔隙率降低,表面粗糙度增加,润湿性增强。x射线衍射分析证实了TiO₂(锐钛矿和金红石)和Nb₂O₅相的形成,由于等离子体放电加剧,在hap涂层中观察到较高的金红石分数。在模拟体液(SBF)中进行的电化学测试表明,含hap样品的耐腐蚀性得到了改善,腐蚀电流密度和钝化电流值均有所降低。MC3T3前成骨细胞的体外实验进一步显示,由于粗糙的地形和生物活性离子的持续释放的协同作用,hap涂层具有更好的细胞活力和增殖能力。总体而言,peo修饰的Ti40Nb样品表现出增强的腐蚀保护和细胞相容性,强调了它们作为下一代钛基骨科植入材料的强大潜力。
{"title":"Biofunctionalization of SLM Ti–40Nb alloy through hydroxyapatite-modified plasma electrolytic oxidation coating","authors":"Shangavi Subramanian ,&nbsp;Kesavan Praveenkumar ,&nbsp;Nagumothu Rameshbabu ,&nbsp;Kuppusamy Lokeshraj ,&nbsp;Ansheed Raheem ,&nbsp;Jayamani Jayaraj ,&nbsp;Konda Gokuldoss Prashanth","doi":"10.1016/j.apsadv.2025.100917","DOIUrl":"10.1016/j.apsadv.2025.100917","url":null,"abstract":"<div><div>This study reports the successful development of bioactive coatings on in-situ alloyed Ti-40Nb substrates fabricated via selective laser melting (SLM) using plasma electrolytic oxidation (PEO). Two electrolytes were employed for PEO processing: phosphate–silicate (PS) and phosphate–silicate–hydroxyapatite (PSHA). A comparative evaluation was performed to investigate the influence of electrolyte composition on surface morphology, corrosion resistance, and biological performance. The incorporation of hydroxyapatite (HAp) in the PSHA electrolyte significantly modified the coating structure, resulting in reduced porosity, increased surface roughness, and enhanced wettability. X-ray diffraction analysis confirmed the formation of TiO₂ (anatase and rutile) and Nb₂O₅ phases, with a higher rutile fraction observed in the HAp-incorporated coatings due to intensified plasma discharges. Electrochemical testing in simulated body fluid (SBF) demonstrated improved corrosion resistance for the HAp-containing samples, as evidenced by lower corrosion current density and passivation current values. In vitro assays with MC3T3 pre-osteoblast cells further revealed superior cell viability and proliferation on the HAp-incorporated coatings, attributed to the synergistic effects of roughened topography and the sustained release of bioactive ions. Overall, the PEO-modified Ti40Nb samples exhibited enhanced corrosion protection and cytocompatibility, underscoring their strong potential as next-generation Ti-based orthopedic implant materials.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"31 ","pages":"Article 100917"},"PeriodicalIF":8.7,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of interface on magnetic exchange coupling in Co/Ru/Co trilayer: From ab initio simulations to micromagnetics 界面对Co/Ru/Co三层磁交换耦合的影响:从从头算模拟到微磁学
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-12-10 DOI: 10.1016/j.apsadv.2025.100915
Sergiu Arapan , Jan Priessnitz , Alexander Kovacs , Dominik Legut , Harald Oezelt , David Böhm , Markus Gusenbauer , Thomas Schrefl
Interfaces play a substantial role for the functional properties of structured magnetic materials and magnetic multilayers. Modeling the functional behavior of magnetic materials requires the treatment of the relevant phenomena at the device level. Properties predicted from the electronic structure and spin dynamics at the atomistic level have to be properly transferred into a continuum level treatment. In this work we show how Co/Ru/Co three layers can be simulated with the continuum theory of micromagnetism, with interface coupling energies and bulk intrinsic properties properly derived from the results of ab initio and spin dynamics simulations at different temperatures.
界面对结构磁性材料和磁性多层材料的功能性能起着重要的作用。磁性材料的功能行为建模需要在器件级处理相关现象。从原子水平的电子结构和自旋动力学预测的性质必须适当地转移到连续统水平的处理。在这项工作中,我们展示了如何用微磁性连续统理论模拟Co/Ru/Co三层,并从从头算和不同温度下的自旋动力学模拟结果中适当地推导出界面耦合能和体本征性质。
{"title":"Effect of interface on magnetic exchange coupling in Co/Ru/Co trilayer: From ab initio simulations to micromagnetics","authors":"Sergiu Arapan ,&nbsp;Jan Priessnitz ,&nbsp;Alexander Kovacs ,&nbsp;Dominik Legut ,&nbsp;Harald Oezelt ,&nbsp;David Böhm ,&nbsp;Markus Gusenbauer ,&nbsp;Thomas Schrefl","doi":"10.1016/j.apsadv.2025.100915","DOIUrl":"10.1016/j.apsadv.2025.100915","url":null,"abstract":"<div><div>Interfaces play a substantial role for the functional properties of structured magnetic materials and magnetic multilayers. Modeling the functional behavior of magnetic materials requires the treatment of the relevant phenomena at the device level. Properties predicted from the electronic structure and spin dynamics at the atomistic level have to be properly transferred into a continuum level treatment. In this work we show how Co/Ru/Co three layers can be simulated with the continuum theory of micromagnetism, with interface coupling energies and bulk intrinsic properties properly derived from the results of <em>ab initio</em> and spin dynamics simulations at different temperatures.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"31 ","pages":"Article 100915"},"PeriodicalIF":8.7,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect analysis of Al-delta-doped ZnO thin films by positron annihilation spectroscopy al - δ掺杂ZnO薄膜的正电子湮没光谱缺陷分析
IF 8.7 Q1 CHEMISTRY, PHYSICAL Pub Date : 2025-12-09 DOI: 10.1016/j.apsadv.2025.100916
Guoxiu Zhang , Maciej Oskar Liedke , Maik Butterling , Eric Hirschmann , Andreas Wagner , René Hübner , Shengqiang Zhou , Manfred Helm , Elizabeth von Hauff , Slawomir Prucnal
Zinc oxide (ZnO) is a wide-bandgap semiconductor with excellent optical and electrical properties, making it a promising material for a wide range of applications in optoelectronics and sensors. The properties of ZnO can be easily modified through doping and defect engineering, which determines its long-term stability and ultimate application. One of the most well-known dopants for ZnO is aluminum (Al), which is used to produce the transparent conductive oxide AZO. In this study, using positron annihilation spectroscopy (PAS) and photoluminescence (PL), we demonstrate defect engineering in AZO through millisecond flash-lamp annealing. We show that the nature of the defects strongly depends on the Al-concentration. The highest electrical conductivity of AZO is obtained at an Al:Zn layer ratio of 1:20, i.e., 2.64 at. % Al. Samples with higher Al content are more resistant to annealing and contain more defects. PAS results reveal the presence of zinc vacancies (VZn) and zinc–oxygen vacancy complexes (VZn+O) in the delta-AZO thin films, and although the PAS and PL results are generally consistent, slight differences suggest the possible existence of non-optically active defects that are not revealed by the PL measurements. Additionally, an appropriate amount of aluminum doping contributes to improving the crystallinity of ZnO.
氧化锌(ZnO)是一种宽带隙半导体材料,具有优异的光学和电学性能,在光电子和传感器领域具有广泛的应用前景。通过掺杂和缺陷工程可以很容易地改变ZnO的性质,这决定了它的长期稳定性和最终的应用。最著名的氧化锌掺杂剂之一是铝(Al),它被用来生产透明导电氧化物AZO。在这项研究中,我们利用正电子湮灭光谱(PAS)和光致发光(PL),通过毫秒闪光灯退火,证明了AZO的缺陷工程。我们发现缺陷的性质与铝浓度密切相关。当Al:Zn层比为1:20时,AZO的电导率最高,即2.64 at。Al含量高的样品更耐退火,含有更多的缺陷。PAS结果显示,在δ - azo薄膜中存在锌空位(VZn)和锌-氧空位配合物(VZn+O),尽管PAS和PL结果基本一致,但微小的差异表明可能存在非光学活性缺陷,而这些缺陷是PL测量没有显示出来的。此外,适量的铝掺杂有助于提高ZnO的结晶度。
{"title":"Defect analysis of Al-delta-doped ZnO thin films by positron annihilation spectroscopy","authors":"Guoxiu Zhang ,&nbsp;Maciej Oskar Liedke ,&nbsp;Maik Butterling ,&nbsp;Eric Hirschmann ,&nbsp;Andreas Wagner ,&nbsp;René Hübner ,&nbsp;Shengqiang Zhou ,&nbsp;Manfred Helm ,&nbsp;Elizabeth von Hauff ,&nbsp;Slawomir Prucnal","doi":"10.1016/j.apsadv.2025.100916","DOIUrl":"10.1016/j.apsadv.2025.100916","url":null,"abstract":"<div><div>Zinc oxide (ZnO) is a wide-bandgap semiconductor with excellent optical and electrical properties, making it a promising material for a wide range of applications in optoelectronics and sensors. The properties of ZnO can be easily modified through doping and defect engineering, which determines its long-term stability and ultimate application. One of the most well-known dopants for ZnO is aluminum (Al), which is used to produce the transparent conductive oxide AZO. In this study, using positron annihilation spectroscopy (PAS) and photoluminescence (PL), we demonstrate defect engineering in AZO through millisecond flash-lamp annealing. We show that the nature of the defects strongly depends on the Al-concentration. The highest electrical conductivity of AZO is obtained at an Al:Zn layer ratio of 1:20, i.e., 2.64 at. % Al. Samples with higher Al content are more resistant to annealing and contain more defects. PAS results reveal the presence of zinc vacancies (V<sub>Zn</sub>) and zinc–oxygen vacancy complexes (V<sub>Zn+</sub><sub>O</sub>) in the delta-AZO thin films, and although the PAS and PL results are generally consistent, slight differences suggest the possible existence of non-optically active defects that are not revealed by the PL measurements. Additionally, an appropriate amount of aluminum doping contributes to improving the crystallinity of ZnO.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"31 ","pages":"Article 100916"},"PeriodicalIF":8.7,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145737645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Applied Surface Science Advances
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