Polycrystalline CdTe photovoltaics are promising alternatives to silicon-based solar cells, with device performance strongly influenced by the n-type CdS window layer. Close-spaced sublimation (CSS) efficiently deposits CdS layers, enabling full device fabrication. In this study, we present a comprehensive investigation into the impact of oxygenation over a wide range of concentrations (0% - 30%) on close-spaced sublimated CdS (CSS-CdS:O) films - an aspect which has not been reported previously. The close-spaced sublimated CdTe (CSS-CdTe) was used as the photon-absorbing layer. Furthermore, it examines the consequent effects on CSS-CdS:O/CSS-CdTe solar cell parameters. Material properties were characterized by means of UV–visible spectroscopy (UV–Vis), Field Emission Scanning Electron Microscope (FE-SEM), and X-ray Photoelectron Spectroscopy (XPS), while a solar simulator was utilized for device characterization. The optimized CdS:O layer with 20% oxygen incorporation yielded the best power conversion efficiency of 9.2%, representing around a 70% increment compared to the oxygen-free sample. The CdS/CdTe device exhibited an open-circuit voltage (VOC) of 0.678 V, short circuit current (JSC) of 24.8 mA cm-², and fill factor (FF) of 55% under the AM 1.5 G illumination.
多晶CdTe光伏电池是硅基太阳能电池的有前途的替代品，其器件性能受到n型CdS窗口层的强烈影响。近间隔升华（CSS）有效沉积cd层，实现完整的器件制造。在这项研究中，我们提出了一个全面的调查，在广泛的浓度范围内（0% - 30%）氧化对近间隔升华cd （CSS-CdS:O）薄膜的影响，这是以前没有报道过的一个方面。采用近间隔升华CdTe （CSS-CdTe）作为光子吸收层。此外，它还研究了对CSS-CdS:O/CSS-CdTe太阳能电池参数的后续影响。通过紫外可见光谱（UV-Vis）、场发射扫描电镜（FE-SEM）和x射线光电子能谱（XPS）对材料的性质进行了表征，并利用太阳模拟器对器件进行了表征。经过优化的含氧20%的CdS:O层的最佳功率转换效率为9.2%，比无氧样品提高了约70%。在AM 1.5 G照明下，CdS/CdTe器件的开路电压（VOC）为0.678 V，短路电流（JSC）为24.8 mA cm-²，填充因子（FF）为55%。
{"title":"Enhancing CdS/CdTe thin-film solar cell efficiency: The role of oxygenation in close-spaced sublimated CdS layers","authors":"K.M.N.S. Bandara , A.A.I. Lakmal , H.C.S. Perera , M.A.K.L. Dissanayake , V.A. Seneviratne , Thomas Delclos , B.S. Dassanayake , Gobind Das","doi":"10.1016/j.apsadv.2026.100958","DOIUrl":"10.1016/j.apsadv.2026.100958","url":null,"abstract":"<div><div>Polycrystalline CdTe photovoltaics are promising alternatives to silicon-based solar cells, with device performance strongly influenced by the n-type CdS window layer. Close-spaced sublimation (CSS) efficiently deposits CdS layers, enabling full device fabrication. In this study, we present a comprehensive investigation into the impact of oxygenation over a wide range of concentrations (0% - 30%) on close-spaced sublimated CdS (CSS-CdS:O) films - an aspect which has not been reported previously. The close-spaced sublimated CdTe (CSS-CdTe) was used as the photon-absorbing layer. Furthermore, it examines the consequent effects on CSS-CdS:O/CSS-CdTe solar cell parameters. Material properties were characterized by means of UV–visible spectroscopy (UV–Vis), Field Emission Scanning Electron Microscope (FE-SEM), and X-ray Photoelectron Spectroscopy (XPS), while a solar simulator was utilized for device characterization. The optimized CdS:O layer with 20% oxygen incorporation yielded the best power conversion efficiency of 9.2%, representing around a 70% increment compared to the oxygen-free sample. The CdS/CdTe device exhibited an open-circuit voltage (<em>V<sub>OC</sub></em>) of 0.678 V, short circuit current (<em>J<sub>SC</sub></em>) of 24.8 mA cm<sup>-</sup>², and fill factor (<em>FF</em>) of 55% under the AM 1.5 G illumination.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100958"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147397898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-02-22DOI: 10.1016/j.apsadv.2026.100957
Noriyuki Inoue , Naoe Hosoda , Michiko Yoshitake
Room-temperature bonding between a Bi2Te3 Peltier element and aluminium wiring was successfully achieved using a surface activation technique. This method involves activation of bonding surfaces in vacuum, enabling direct adhesion between dissimilar materials. STEM, HR-TEM, and EDS analyses revealed a unique interface structure composed of two layers: a ∼2 nm crystalline layer on the aluminium side containing Te and a 4.5– to 6-nm-thick amorphous Al₂O₃ layer containing crystalline nanoparticles on the Bi2Te3 side. To interpret the observed concentration profile, the formation enthalpy of possible reactions and the oxygen source were investigated. It was hypothesised that upon contact, aluminium and Bi₂Te₃ react to form a thermodynamically stable Al₂Te₃ layer. Oxygen inside Bi2Te3 then diffuses toward this layer, causing selective oxidation of aluminium at the Bi₂Te₃–Al₂Te₃ interface. In cases of limited oxygen availability, the Al₂Te₃ layer near the aluminium remains unoxidised. This results in a concentration profile of Al, Te segregates, Al₂O₃, and Bi₂Te₃ from the aluminium side, while Bi concentration increases at the Bi₂Te₃ interface due to Te consumption. The study demonstrates the feasibility of room-temperature bonding for these materials and highlights the critical role of oxygen in forming complex interfacial structures.
{"title":"Unique compositional profile at the interface between Bi2Te3 and aluminium produced via room-temperature bonding","authors":"Noriyuki Inoue , Naoe Hosoda , Michiko Yoshitake","doi":"10.1016/j.apsadv.2026.100957","DOIUrl":"10.1016/j.apsadv.2026.100957","url":null,"abstract":"<div><div>Room-temperature bonding between a Bi<sub>2</sub>Te<sub>3</sub> Peltier element and aluminium wiring was successfully achieved using a surface activation technique. This method involves activation of bonding surfaces in vacuum, enabling direct adhesion between dissimilar materials. STEM, HR-TEM, and EDS analyses revealed a unique interface structure composed of two layers: a ∼2 nm crystalline layer on the aluminium side containing Te and a 4.5– to 6-nm-thick amorphous Al₂O₃ layer containing crystalline nanoparticles on the Bi<sub>2</sub>Te<sub>3</sub> side. To interpret the observed concentration profile, the formation enthalpy of possible reactions and the oxygen source were investigated. It was hypothesised that upon contact, aluminium and Bi₂Te₃ react to form a thermodynamically stable Al₂Te₃ layer. Oxygen inside Bi<sub>2</sub>Te<sub>3</sub> then diffuses toward this layer, causing selective oxidation of aluminium at the Bi₂Te₃–Al₂Te₃ interface. In cases of limited oxygen availability, the Al₂Te₃ layer near the aluminium remains unoxidised. This results in a concentration profile of Al, Te segregates, Al₂O₃, and Bi₂Te₃ from the aluminium side, while Bi concentration increases at the Bi₂Te₃ interface due to Te consumption. The study demonstrates the feasibility of room-temperature bonding for these materials and highlights the critical role of oxygen in forming complex interfacial structures.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100957"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147397900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-02-11DOI: 10.1016/j.apsadv.2026.100952
Woojin Park , Sangjun Park , Jonggu Han , Solee Park , Se Youn Moon
Although unintentional contamination of the inner chamber wall during repeated plasma processing can substantially affect semiconductor device performance, the quantitative impact of chamber wall conditions remains underexplored. To bridge this gap, in this study, the effects of repeated identical deposition processes on the chamber wall and their subsequent influence on plasma behavior and the properties of films deposited on substrates were investigated. With each run, the wall-deposited film gradually thickened, eventually saturating at approximately 5 μm. Throughout this wall contamination process, driven by polymer deposition, the film thicknesses at the center and edge of the bottom substrate followed distinct trends. Notably, the film at the substrate edge, located closer to the chamber wall, exhibited considerable variation in both thickness and chemical composition. These results suggest that plasma–wall interactions, intensified by the accumulation of wall deposits, led to the release of CxFy species from the contaminated chamber wall, thereby enhancing film growth at the substrate edge. Chemical analyses revealed that the proportions of carbon-containing groups such as CF2, CCF2, and C = C decreased in the wall-deposited film but increased in the film formed at the substrate edge. Furthermore, the plasma–wall interaction altered the radial distribution of reactive species in the plasma: The CF2 density at the radial edge increased fourfold, while the F density decreased by 29 %. These findings underscore the critical role of plasma–wall interactions in modulating film deposition characteristics.
{"title":"Structural and chemical evolution of fluorocarbon coatings on reactor walls and their run-to-run impacts on film deposition in C4F8/Ar/N2 plasma processing","authors":"Woojin Park , Sangjun Park , Jonggu Han , Solee Park , Se Youn Moon","doi":"10.1016/j.apsadv.2026.100952","DOIUrl":"10.1016/j.apsadv.2026.100952","url":null,"abstract":"<div><div>Although unintentional contamination of the inner chamber wall during repeated plasma processing can substantially affect semiconductor device performance, the quantitative impact of chamber wall conditions remains underexplored. To bridge this gap, in this study, the effects of repeated identical deposition processes on the chamber wall and their subsequent influence on plasma behavior and the properties of films deposited on substrates were investigated. With each run, the wall-deposited film gradually thickened, eventually saturating at approximately 5 μm. Throughout this wall contamination process, driven by polymer deposition, the film thicknesses at the center and edge of the bottom substrate followed distinct trends. Notably, the film at the substrate edge, located closer to the chamber wall, exhibited considerable variation in both thickness and chemical composition. These results suggest that plasma–wall interactions, intensified by the accumulation of wall deposits, led to the release of C<sub>x</sub>F<sub>y</sub> species from the contaminated chamber wall, thereby enhancing film growth at the substrate edge. Chemical analyses revealed that the proportions of carbon-containing groups such as CF<sub>2</sub>, <em>C</em><img>CF<sub>2</sub>, and <em>C</em> = <em>C</em> decreased in the wall-deposited film but increased in the film formed at the substrate edge. Furthermore, the plasma–wall interaction altered the radial distribution of reactive species in the plasma: The CF<sub>2</sub> density at the radial edge increased fourfold, while the F density decreased by 29 %. These findings underscore the critical role of plasma–wall interactions in modulating film deposition characteristics.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100952"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147397912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-02-24DOI: 10.1016/j.apsadv.2026.100950
Alexander Mozalev , Maria Bendova , Jan Prasek , Lukas Kalina , Petr Smisitel , Francesc Gispert-Guirado , Eduard Llobet
The fabrication of inorganic semiconducting nanomaterials with a high content of molybdenum oxide (MoOx), self-organized in arrays on a substrate, has long been a challenge, limiting the utilization of MoOx nanostructures in on-chip micro- and nanodevices. Here, for the first time, arrays of MoOx nanostructures, such as bulges, columns, and rods, of high densities (108 – 1010 cm−2), self-standing on a substrate, are synthesized via the in situ anodization of sputter-deposited Mo-Nb alloy layers with variable Mo content, ranging from 5 to 95 at. %, covered with a thin Al layer. The approach involves the growth of a porous anodic alumina (PAA) film that enables the formation of fully amorphous molybdenum-niobium mixed-oxide nanostructures within and under the PAA nanopores. By combining SEM, XPS, and XRD analyses, it is shown that, after selective PAA dissolution, the free-standing nanostructures are composed of a dominating amount of MoOx with various Mon+ cations (n = 6 to 3) mixed at the atomic level with a minor amount of Nb2O5 and NbO2 suboxide, which are ‘doped’ at the surface with Al2O3 originating from the PAA cell walls and ‘serving’ as a shape stabilizer. The record-high Mo content achieved with this technology is 92 at. %. The accomplishment is due to the enhanced migration of Mon+ cations within the mixed oxide inside the PAA nanopores and along the pore walls. Annealing at 550°C induces a unique phase separation, resulting in MoO2 nanocrystals dispersed within the amorphous MoOx-Nb2O5 matrix and an increased oxidation state of MoOx at the film surface. The cyclic voltammetry and electrochemical impedance spectroscopy examinations confirm that the entire surface of the oxide nanorods is an n-type semiconductor with a charge carrier density of 2 × 1021 cm−3. The highly competitive pseudocapacitive properties of the nanoarray derived from Mo-19at. %Nb alloy are disclosed, yielding a capacitance of ∼10 mF cm−2, rendering the film promising as a 3D semiconductor nanoelectrode for emerging on-chip energy-storage microdevices. Moreover, the film efficiently serves as a gas-sensing layer for rapidly and selectively detecting low concentrations of C2H5OH (10 ppm) and CO (100 ppm). More potential applications include antibacterial coatings, self-cleaning surfaces, and electrochromic films, where the rod-like nanomorphology and the large number of Mo-containing reactive sites are highly desirable.
{"title":"Advanced anodic molybdenum-oxide nanomaterials derived from Mo-Nb alloys","authors":"Alexander Mozalev , Maria Bendova , Jan Prasek , Lukas Kalina , Petr Smisitel , Francesc Gispert-Guirado , Eduard Llobet","doi":"10.1016/j.apsadv.2026.100950","DOIUrl":"10.1016/j.apsadv.2026.100950","url":null,"abstract":"<div><div>The fabrication of inorganic semiconducting nanomaterials with a high content of molybdenum oxide (MoO<em><sub>x</sub></em>), self-organized in arrays on a substrate, has long been a challenge, limiting the utilization of MoO<em><sub>x</sub></em> nanostructures in on-chip micro- and nanodevices. Here, for the first time, arrays of MoO<em><sub>x</sub></em> nanostructures, such as bulges, columns, and rods, of high densities (10<sup>8</sup> – 10<sup>10</sup> cm<sup>−2</sup>), self-standing on a substrate, are synthesized via the in situ anodization of sputter-deposited Mo-Nb alloy layers with variable Mo content, ranging from 5 to 95 at. %, covered with a thin Al layer. The approach involves the growth of a porous anodic alumina (PAA) film that enables the formation of fully amorphous molybdenum-niobium mixed-oxide nanostructures within and under the PAA nanopores. By combining SEM, XPS, and XRD analyses, it is shown that, after selective PAA dissolution, the free-standing nanostructures are composed of a dominating amount of MoO<em><sub>x</sub></em> with various Mo<em><sup>n</sup></em><sup>+</sup> cations (<em>n</em> = 6 to 3) mixed at the atomic level with a minor amount of Nb<sub>2</sub>O<sub>5</sub> and NbO<sub>2</sub> suboxide, which are ‘doped’ at the surface with Al<sub>2</sub>O<sub>3</sub> originating from the PAA cell walls and ‘serving’ as a shape stabilizer. The record-high Mo content achieved with this technology is 92 at. %. The accomplishment is due to the enhanced migration of Mo<em><sup>n</sup></em><sup>+</sup> cations within the mixed oxide inside the PAA nanopores and along the pore walls. Annealing at 550°C induces a unique phase separation, resulting in MoO<sub>2</sub> nanocrystals dispersed within the amorphous MoO<em><sub>x</sub></em>-Nb<sub>2</sub>O<sub>5</sub> matrix and an increased oxidation state of MoO<em><sub>x</sub></em> at the film surface. The cyclic voltammetry and electrochemical impedance spectroscopy examinations confirm that the entire surface of the oxide nanorods is an <em>n</em>-type semiconductor with a charge carrier density of 2 × 10<sup>21</sup> cm<sup>−3</sup>. The highly competitive pseudocapacitive properties of the nanoarray derived from Mo-19at. %Nb alloy are disclosed, yielding a capacitance of ∼10 mF cm<sup>−2</sup>, rendering the film promising as a 3D semiconductor nanoelectrode for emerging on-chip energy-storage microdevices. Moreover, the film efficiently serves as a gas-sensing layer for rapidly and selectively detecting low concentrations of C<sub>2</sub>H<sub>5</sub>OH (10 ppm) and CO (100 ppm). More potential applications include antibacterial coatings, self-cleaning surfaces, and electrochromic films, where the rod-like nanomorphology and the large number of Mo-containing reactive sites are highly desirable.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100950"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147397939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-02-17DOI: 10.1016/j.apsadv.2026.100953
Giuseppe Ragusano , Marcus Rohnke , Alessandro Auditore , Nunzio Tuccitto , Alberto Bossi , Marta Penconi , Antonino Licciardello , Valentina Spampinato
Hybrid materials that integrate organic and inorganic components within a single architecture pose significant challenges for depth profiling due to their compositional complexity. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) offers spatially resolved chemical information coupled with high sensitivity, but conventional sputtering conditions typically fail to simultaneously preserve organic molecular information while efficiently eroding inorganic materials. Here, we report a previously unexplored approach for the characterization of such complex hybrid systems. By employing a reactive oxygen gas cluster ion beam (O2-GCIB) operated at high-energy-per-molecule, we achieve, for the first time, consistent and reliable depth profiling of both layered and blended hybrid structures comprising molybdenum oxide (MoO₃) and N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPD). High-energy per molecule oxygen clusters enhance the sputtering yield of the inorganic phase, also mitigating chemical degradation in the organic component, helping to preserve molecular information. This dual functionality effectively overcomes the limitations observed with argon-based clusters establishing a new paradigm for the molecular analysis of hybrid interfaces.
{"title":"Reactive high-energy-per-molecule oxygen clusters for reliable ToF-SIMS depth profiling of hybrid nanomaterials","authors":"Giuseppe Ragusano , Marcus Rohnke , Alessandro Auditore , Nunzio Tuccitto , Alberto Bossi , Marta Penconi , Antonino Licciardello , Valentina Spampinato","doi":"10.1016/j.apsadv.2026.100953","DOIUrl":"10.1016/j.apsadv.2026.100953","url":null,"abstract":"<div><div>Hybrid materials that integrate organic and inorganic components within a single architecture pose significant challenges for depth profiling due to their compositional complexity. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) offers spatially resolved chemical information coupled with high sensitivity, but conventional sputtering conditions typically fail to simultaneously preserve organic molecular information while efficiently eroding inorganic materials. Here, we report a previously unexplored approach for the characterization of such complex hybrid systems. By employing a reactive oxygen gas cluster ion beam (O<sub>2</sub>-GCIB) operated at high-energy-per-molecule, we achieve, for the first time, consistent and reliable depth profiling of both layered and blended hybrid structures comprising molybdenum oxide (MoO₃) and N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPD). High-energy per molecule oxygen clusters enhance the sputtering yield of the inorganic phase, also mitigating chemical degradation in the organic component, helping to preserve molecular information. This dual functionality effectively overcomes the limitations observed with argon-based clusters establishing a new paradigm for the molecular analysis of hybrid interfaces.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100953"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147397902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The increasing need for environment-friendly substitutes for rare-earth-based magnets has sparked interest in materials such as the L10-ordered FeNi (tetrataenite) phase, which possesses high magnetocrystalline anisotropy and saturation magnetization. Despite being a promising candidate, preparation of this ordered phase in the laboratory remains a challenge due to the slow diffusion kinetics that prevent atomic ordering under normal conditions. From the theoretical estimations and experimental results, Cu is known for accelerating the atomic interdiffusion and promoting chemical disorder, which may facilitate the grain boundary diffusion. In the present work, chemically homogeneous multilayers of equiatomic FeNi and Cu-doped FeNi (5 at.%) were studied to investigate the correlation between self-diffusion and magnetism. Nuclear resonance reflectivity and forward scattering measurements on as-deposited and annealed samples showed that Cu doping substantially increases self-diffusion, which is in agreement with significant changes in the local magnetic environment, as supported by conversion electron Mössbauer spectroscopy. Although the net magnetic moment remained nearly unchanged, an enhancement in the coercivity at 573 K was observed in the Cu-doped sample, as quantified by SQUID-VSM. These observations highlight the potential of Cu-assisted diffusion channels to facilitate the formation of ordered phases in FeNi systems as a strategic approach to the development of rare-earth-free permanent magnets.
{"title":"Role of Cu doping in promoting diffusion-assisted evolution of magnetic properties in equiatomic FeNi films","authors":"Ashish Gupta , Deepak Prajapat , Ilya Sergeev , Rajeev Joshi , Rajeev Rawat , Anil Gome , V.R. Reddy , Mukul Gupta","doi":"10.1016/j.apsadv.2025.100929","DOIUrl":"10.1016/j.apsadv.2025.100929","url":null,"abstract":"<div><div>The increasing need for environment-friendly substitutes for rare-earth-based magnets has sparked interest in materials such as the L1<sub>0</sub>-ordered FeNi (tetrataenite) phase, which possesses high magnetocrystalline anisotropy and saturation magnetization. Despite being a promising candidate, preparation of this ordered phase in the laboratory remains a challenge due to the slow diffusion kinetics that prevent atomic ordering under normal conditions. From the theoretical estimations and experimental results, Cu is known for accelerating the atomic interdiffusion and promoting chemical disorder, which may facilitate the grain boundary diffusion. In the present work, chemically homogeneous multilayers of equiatomic FeNi and Cu-doped FeNi (5 at.%) were studied to investigate the correlation between self-diffusion and magnetism. Nuclear resonance reflectivity and forward scattering measurements on as-deposited and annealed samples showed that Cu doping substantially increases self-diffusion, which is in agreement with significant changes in the local magnetic environment, as supported by conversion electron Mössbauer spectroscopy. Although the net magnetic moment remained nearly unchanged, an enhancement in the coercivity at 573 K was observed in the Cu-doped sample, as quantified by SQUID-VSM. These observations highlight the potential of Cu-assisted diffusion channels to facilitate the formation of ordered phases in FeNi systems as a strategic approach to the development of rare-earth-free permanent magnets.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100929"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145979779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-01-29DOI: 10.1016/j.apsadv.2026.100940
Livia Alexandra Dinu , Catalin Parvulescu , Octavian Gabriel Simionescu , Oana Brincoveanu , Cosmin Romanitan , Cristina Pachiu , Ludmila Motelica , Dua Özsoylu , Sevinc Kurbanoglu
In this study, we present the fabrication and characterization of a miniaturized, single-chip electrochemical sensor implemented on a silicon/silicon dioxide platform. The device incorporates a nanocrystalline graphite (NCG) working electrode and gold reference and counter electrodes, all monolithically integrated on the same substrate. This configuration provides a compact and reliable sensing architecture, combining the electrochemical advantages of carbon with the precision and reproducibility of microfabrication. A molecularly imprinted biopolymer (MIP) layer for glyphosate (GLY) detection was subsequently formed by electrodepositing chitosan (CS) in the presence of the target analyte, directly onto the NCG surface. The resulting sensor exhibited high sensitivity and selectivity, allowing indirect detection of GLY at concentrations as low as 0.015 ppb. Validation tests demonstrated excellent recovery rates in spiked water samples, highlighting the sensor’s potential for environmental monitoring applications. This integrated platform offers a promising approach for the sensitive, portable, and cost-effective detection of GLY residues.
{"title":"Nanocrystalline graphite-patterned silicon substrates for molecularly imprinted biopolymer-based electrochemical detection of glyphosate","authors":"Livia Alexandra Dinu , Catalin Parvulescu , Octavian Gabriel Simionescu , Oana Brincoveanu , Cosmin Romanitan , Cristina Pachiu , Ludmila Motelica , Dua Özsoylu , Sevinc Kurbanoglu","doi":"10.1016/j.apsadv.2026.100940","DOIUrl":"10.1016/j.apsadv.2026.100940","url":null,"abstract":"<div><div>In this study, we present the fabrication and characterization of a miniaturized, single-chip electrochemical sensor implemented on a silicon/silicon dioxide platform. The device incorporates a nanocrystalline graphite (NCG) working electrode and gold reference and counter electrodes, all monolithically integrated on the same substrate. This configuration provides a compact and reliable sensing architecture, combining the electrochemical advantages of carbon with the precision and reproducibility of microfabrication. A molecularly imprinted biopolymer (MIP) layer for glyphosate (GLY) detection was subsequently formed by electrodepositing chitosan (CS) in the presence of the target analyte, directly onto the NCG surface. The resulting sensor exhibited high sensitivity and selectivity, allowing indirect detection of GLY at concentrations as low as 0.015 ppb. Validation tests demonstrated excellent recovery rates in spiked water samples, highlighting the sensor’s potential for environmental monitoring applications. This integrated platform offers a promising approach for the sensitive, portable, and cost-effective detection of GLY residues.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100940"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146079041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-01-30DOI: 10.1016/j.apsadv.2026.100937
Chung-Wen Kuo , Ko-Shan Ho , Ruo-Yu Wang , Jeng-Kuei Chang , Yuan-Chung Lin , Pei-Rong Lu , Pei-Ying Lee , Tzi-Yi Wu
The oxygen reduction current of the cathode catalyst doped with both nitrogen and sulfur atoms is higher than that of the catalyst doped with only nitrogen atom or the catalyst doped with only sulfur atom. Nitrogen and sulfur dual-doped non-precious metal catalysts are synthesized through the pyrolysis of nitrogen- and sulfur-rich microporous polymeric precursor, specifically (poly(o-phenylenediamine-co-2-aminobenzenesulfonic acid) (P(OPD-co-SANI))). X-ray photoelectron spectroscopy (XPS) spectra reveal the presence of Fe-S bonds, pyridinic-N, pyridine-N oxide, graphitic-N, Fe-N, and pyrrolic-N within the FeNSC-900 composite. X-ray diffraction (XRD) analysis confirms a degree of graphitization in the NSC-1000, FeNC-900, FeNC-1000, FeNSC-900, and FeNSC-1000 catalysts. Scanning electron microscopy characterization indicates that the FeNSC-900 catalysts possess porous nanostructures, facilitating access to active sites essential for high oxygen reduction reaction (ORR) electrocatalytic activity. The FeNSC-900 catalyst demonstrates good electrocatalytic activity towards the ORR in KOH(aq), with an ORR half-wave potential of 0.76 V. In a single-cell test, membrane electrode assembly (MEA) utilizing the FeNSC-900 catalyst as the cathode achieves a peak power density of approximately 213.3 mW cm−2 at 60°C, suggesting that the FeNSC-900 catalyst is a promising alternative to platinum-based catalysts in anion exchange membrane fuel cell (AEMFC) applications.
{"title":"Calcined Fe(III)-chelated poly(o-phenylenediamine-co-2-aminobenzenesulfonic acid) as cathode catalyst for anion-exchange membrane fuel cells","authors":"Chung-Wen Kuo , Ko-Shan Ho , Ruo-Yu Wang , Jeng-Kuei Chang , Yuan-Chung Lin , Pei-Rong Lu , Pei-Ying Lee , Tzi-Yi Wu","doi":"10.1016/j.apsadv.2026.100937","DOIUrl":"10.1016/j.apsadv.2026.100937","url":null,"abstract":"<div><div>The oxygen reduction current of the cathode catalyst doped with both nitrogen and sulfur atoms is higher than that of the catalyst doped with only nitrogen atom or the catalyst doped with only sulfur atom. Nitrogen and sulfur dual-doped non-precious metal catalysts are synthesized through the pyrolysis of nitrogen- and sulfur-rich microporous polymeric precursor, specifically (poly(o-phenylenediamine-<em>co</em>-2-aminobenzenesulfonic acid) (P(OPD-<em>co</em>-SANI))). X-ray photoelectron spectroscopy (XPS) spectra reveal the presence of Fe-S bonds, pyridinic-N, pyridine-N oxide, graphitic-N, Fe-N, and pyrrolic-N within the FeNSC-900 composite. X-ray diffraction (XRD) analysis confirms a degree of graphitization in the NSC-1000, FeNC-900, FeNC-1000, FeNSC-900, and FeNSC-1000 catalysts. Scanning electron microscopy characterization indicates that the FeNSC-900 catalysts possess porous nanostructures, facilitating access to active sites essential for high oxygen reduction reaction (ORR) electrocatalytic activity. The FeNSC-900 catalyst demonstrates good electrocatalytic activity towards the ORR in KOH<sub>(aq)</sub>, with an ORR half-wave potential of 0.76 V. In a single-cell test, membrane electrode assembly (MEA) utilizing the FeNSC-900 catalyst as the cathode achieves a peak power density of approximately 213.3 mW cm<sup>−2</sup> at 60°C, suggesting that the FeNSC-900 catalyst is a promising alternative to platinum-based catalysts in anion exchange membrane fuel cell (AEMFC) applications.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100937"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146078944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present work proposes a breakthrough technology that is focused on biocompatible bio-coating for increased efficiency of condensation in energy systems. By infusing anodized aluminum nanocavities with natural and histological beeswax, a cost-effective, scalable, and efficient solid-infused surface (SIS) is developed. Unlike a passive additive, the beeswax bio-coating modulates the surface behavior actively by adjusting contact angles and reducing contact angle hysteresis to less than 5° at operating conditions. This creates an efficient droplet formation and motion, even under high vapor flow, with a 44% improvement in the heat transfer coefficient (HTC) with respect to bare aluminum at a 16°C subcooling temperature and a 330 kW/m2 peak in heat flux at 24°C. In contrast to most studies focused on enhancing condensation with phase change materials (PCMs), in this work, the dynamic role of the beeswax coating, specifically its state transition—from solid to mushy to liquid—and its impact on droplet dynamics and thermal behavior, is emphasized. It outperforms conventional hydrophobic surfaces, especially under high subcooling conditions where flooding usually reduces efficiency. Durability tests reveal that beeswax-coated samples exhibit sustained enhanced performance even for 10 days of immersing in a wet environment or 100 hours of continuous condensation tests. Overall, the beeswax coating not only represents a breakthrough in enhancing condensation efficiency but also opens new avenues for future developments in desalination, thermal management, and renewable energy technologies.
{"title":"Thermo-responsive nanostructured surface: Beeswax for enhanced condensation performance across solid, liquid, and transition states","authors":"Behzad Rezaee, Hossein Pakzad, Mohammadali Fakhri, Hossein Moosavi Shoar, Ali Moosavi, Masoud Aryanpour","doi":"10.1016/j.apsadv.2026.100936","DOIUrl":"10.1016/j.apsadv.2026.100936","url":null,"abstract":"<div><div>The present work proposes a breakthrough technology that is focused on biocompatible bio-coating for increased efficiency of condensation in energy systems. By infusing anodized aluminum nanocavities with natural and histological beeswax, a cost-effective, scalable, and efficient solid-infused surface (SIS) is developed. Unlike a passive additive, the beeswax bio-coating modulates the surface behavior actively by adjusting contact angles and reducing contact angle hysteresis to less than 5° at operating conditions. This creates an efficient droplet formation and motion, even under high vapor flow, with a 44% improvement in the heat transfer coefficient (HTC) with respect to bare aluminum at a 16°C subcooling temperature and a 330 kW/m<sup>2</sup> peak in heat flux at 24°C. In contrast to most studies focused on enhancing condensation with phase change materials (PCMs), in this work, the dynamic role of the beeswax coating, specifically its state transition—from solid to mushy to liquid—and its impact on droplet dynamics and thermal behavior, is emphasized. It outperforms conventional hydrophobic surfaces, especially under high subcooling conditions where flooding usually reduces efficiency. Durability tests reveal that beeswax-coated samples exhibit sustained enhanced performance even for 10 days of immersing in a wet environment or 100 hours of continuous condensation tests. Overall, the beeswax coating not only represents a breakthrough in enhancing condensation efficiency but also opens new avenues for future developments in desalination, thermal management, and renewable energy technologies.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100936"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146078947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2026-02-28DOI: 10.1016/j.apsadv.2026.100960
Dongwook Shin , Sein Lee , Jeong-Min Park , Junseo Lee , Wooho Ham , Sohyung Lee , Byung-Du Ahn , Dae Hwan Kim , Jong-Uk Bae , YoungSeok Choi , Jang-Yeon Kwon
Virtual and augmented reality and other next-generation displays require ultrahigh-resolution. This trend, in turn, drives aggressive pixel scaling, necessitating the miniaturization of thin-film transistors (TFTs) that control each pixel. High-performance TFTs that operate reliably in the short-channel regime are therefore essential. Herein, 1-µm short-channel self-aligned top-gate (SATG) In–Sn–Zn–O (ITZO) TFTs incorporating an Al2O3/SiO2 dual-layer gate insulator (GI) are realized. The devices are compatible with low-temperature processing and exhibit excellent electrical characteristics: a field-effect mobility of 38.76 cm2/Vs, a subthreshold swing of 0.08 V/decade, a threshold voltage of −1.28 V, an on/off current ratio of ∼108, a negligible drain-induced barrier lowering of ≈0 mV/V, and a threshold voltage shift of +0.23 V under negative bias stress. To elucidate the origin of the remarkable performance in these micron-scale Al2O3/SiO2 GI devices, the fundamental dielectric properties of the GI were evaluated, and time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling and X-ray photoelectron spectroscopy (XPS) analysis were conducted. The results reveal that in addition to the enhanced insulating properties of the GI, the outstanding performance of the Al2O3/SiO2 GI devices is attributable to the dielectric stack, which effectively passivates dangling bond–related defects at the GI–channel interface and strengthens the bonding network and structural integrity of the underlying SiO2 bulk. Consequently, the high-performance 1-µm-channel SATG ITZO TFTs and the underlying mechanisms identified in this study represent substantial advancements, with implications that extend to the broader field of advanced semiconductors.
{"title":"High-performance short-channel self-aligned top-gate InSnZnO TFTs with a stacked Al2O3/SiO2 gate dielectric: Elucidating the enhancement mechanisms","authors":"Dongwook Shin , Sein Lee , Jeong-Min Park , Junseo Lee , Wooho Ham , Sohyung Lee , Byung-Du Ahn , Dae Hwan Kim , Jong-Uk Bae , YoungSeok Choi , Jang-Yeon Kwon","doi":"10.1016/j.apsadv.2026.100960","DOIUrl":"10.1016/j.apsadv.2026.100960","url":null,"abstract":"<div><div>Virtual and augmented reality and other next-generation displays require ultrahigh-resolution. This trend, in turn, drives aggressive pixel scaling, necessitating the miniaturization of thin-film transistors (TFTs) that control each pixel. High-performance TFTs that operate reliably in the short-channel regime are therefore essential. Herein, 1-µm short-channel self-aligned top-gate (SATG) In–Sn–Zn–O (ITZO) TFTs incorporating an Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> dual-layer gate insulator (GI) are realized. The devices are compatible with low-temperature processing and exhibit excellent electrical characteristics: a field-effect mobility of 38.76 cm<sup>2</sup>/Vs, a subthreshold swing of 0.08 V/decade, a threshold voltage of −1.28 V, an on/off current ratio of ∼10<sup>8</sup>, a negligible drain-induced barrier lowering of ≈0 mV/V, and a threshold voltage shift of +0.23 V under negative bias stress. To elucidate the origin of the remarkable performance in these micron-scale Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> GI devices, the fundamental dielectric properties of the GI were evaluated, and time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiling and X-ray photoelectron spectroscopy (XPS) analysis were conducted. The results reveal that in addition to the enhanced insulating properties of the GI, the outstanding performance of the Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> GI devices is attributable to the dielectric stack, which effectively passivates dangling bond–related defects at the GI–channel interface and strengthens the bonding network and structural integrity of the underlying SiO<sub>2</sub> bulk. Consequently, the high-performance 1-µm-channel SATG ITZO TFTs and the underlying mechanisms identified in this study represent substantial advancements, with implications that extend to the broader field of advanced semiconductors.</div></div>","PeriodicalId":34303,"journal":{"name":"Applied Surface Science Advances","volume":"32 ","pages":"Article 100960"},"PeriodicalIF":8.7,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147397936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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