Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394459
H. Uda, T. Sawai, T. Yamada, K. Nogawa, Y. Harada
GaAs MESFET switch ICs operating at low control voltages of 0V/-3V and +3V/0V have been developed for use in the personal handy phone using 1.9 GHz band. The switch ICs have excellent RF characteristics, and have no need for external circuit installation. The unique points of these ICs are the use of GaAs MESFETs with two kinds of pinch-off voltages and a symmetrical source and drain pattern configuration with respect to the gate. The 0V/-3V IC had a low insertion loss of 0.55 dB and 0.65 dB, and high isolation of 31 dB and 24 dB at receiving and transmitting operation, respectively. The +3V/0V IC also had excellent characteristics such as insertion loss of 0.73 dB and 0.95 dB, and isolation of 27 dB and 23 dB, respectively. Both ICs had an output power at 1 dB gain compression point of 25.4 dBm and third-order intercept point of more than 46 dBm.<>
{"title":"High-performance GaAs switch ICs fabricated using MESFETs with two kinds of pinch-off voltages [for handy phone]","authors":"H. Uda, T. Sawai, T. Yamada, K. Nogawa, Y. Harada","doi":"10.1109/GAAS.1993.394459","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394459","url":null,"abstract":"GaAs MESFET switch ICs operating at low control voltages of 0V/-3V and +3V/0V have been developed for use in the personal handy phone using 1.9 GHz band. The switch ICs have excellent RF characteristics, and have no need for external circuit installation. The unique points of these ICs are the use of GaAs MESFETs with two kinds of pinch-off voltages and a symmetrical source and drain pattern configuration with respect to the gate. The 0V/-3V IC had a low insertion loss of 0.55 dB and 0.65 dB, and high isolation of 31 dB and 24 dB at receiving and transmitting operation, respectively. The +3V/0V IC also had excellent characteristics such as insertion loss of 0.73 dB and 0.95 dB, and isolation of 27 dB and 23 dB, respectively. Both ICs had an output power at 1 dB gain compression point of 25.4 dBm and third-order intercept point of more than 46 dBm.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129560561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-01DOI: 10.1109/GAAS.1993.394481
G. Burke, T.W. Chow, J. Graham, J. Kowalski, W. Whitaker, R.A. Johnson
A set of three GaAs ASICs has been designed. Together they form part of the Block V Digital Receiver. Each ASIC contains approximately 150 K-170 K used gates. The authors describe the design methodology for the GaAs ASICs, which ensures successful timing, testability, and functionality.<>
{"title":"Implementation of a deep space receiver on 350 K gate GaAs gate arrays","authors":"G. Burke, T.W. Chow, J. Graham, J. Kowalski, W. Whitaker, R.A. Johnson","doi":"10.1109/GAAS.1993.394481","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394481","url":null,"abstract":"A set of three GaAs ASICs has been designed. Together they form part of the Block V Digital Receiver. Each ASIC contains approximately 150 K-170 K used gates. The authors describe the design methodology for the GaAs ASICs, which ensures successful timing, testability, and functionality.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124237401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/GAAS.1993.394507
R. Dixon
Portable communications, in the form of personal communications systems - whether intended for voice, video, or data, is of great interest today - especially to those who look upon this area as a replacement for the defense projects that have paid the bills for many years. Personal communications systems cannot, however, be approached in the same way that military systems have been approached in the past. Consumers pay less, are more critical, and multiuser consumer systems are just as complex as their military relatives. They must also work at higher frequencies. Gallium arsenide in integrated circuits, the designers capable of implementing them, and the companies capable of producing them, are in a unique position to satisfy the demands of portable, personal communications. The simple reason for this is that a great deal of the frequency spectrum available for personal communications applications is in the range of 1.7 to 6.0 GHz, and higher. Unfortunately, much of what has been done up to now is practically useless. Devices developed do not meet the needs of handheld product designers, and without handheld products portable communications systems can never meet their potential.<>
{"title":"Portable communications needs and no-nos [in IC design]","authors":"R. Dixon","doi":"10.1109/GAAS.1993.394507","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394507","url":null,"abstract":"Portable communications, in the form of personal communications systems - whether intended for voice, video, or data, is of great interest today - especially to those who look upon this area as a replacement for the defense projects that have paid the bills for many years. Personal communications systems cannot, however, be approached in the same way that military systems have been approached in the past. Consumers pay less, are more critical, and multiuser consumer systems are just as complex as their military relatives. They must also work at higher frequencies. Gallium arsenide in integrated circuits, the designers capable of implementing them, and the companies capable of producing them, are in a unique position to satisfy the demands of portable, personal communications. The simple reason for this is that a great deal of the frequency spectrum available for personal communications applications is in the range of 1.7 to 6.0 GHz, and higher. Unfortunately, much of what has been done up to now is practically useless. Devices developed do not meet the needs of handheld product designers, and without handheld products portable communications systems can never meet their potential.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126460993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：