Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394443
N. Ebrahimi, Kuorsiung Li, P. Fowler
Gate recess spray etch and bath-immersion etch processes are compared in the manufacturing of high yield analog GaAs MMICs. Detailed experiment work together with statistical analysis have determined the superiority of the spray etch process over the bath-immersion process. Optimization and implementation of the spray etch process in a three-inch GaAs wafer fabrication line are discussed. Improvements in device current uniformity, circuit RF test yield, and overall yield are demonstrated for the spray etch recess process, in the production of GaAs MMICs.<>
{"title":"Spray etch recess process for high yield analog GaAs MMICs","authors":"N. Ebrahimi, Kuorsiung Li, P. Fowler","doi":"10.1109/GAAS.1993.394443","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394443","url":null,"abstract":"Gate recess spray etch and bath-immersion etch processes are compared in the manufacturing of high yield analog GaAs MMICs. Detailed experiment work together with statistical analysis have determined the superiority of the spray etch process over the bath-immersion process. Optimization and implementation of the spray etch process in a three-inch GaAs wafer fabrication line are discussed. Improvements in device current uniformity, circuit RF test yield, and overall yield are demonstrated for the spray etch recess process, in the production of GaAs MMICs.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122208201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394492
A. Thiede, M. Berroth, P. Tasker, M. Schlechtweg, J. Seibel, B. Raynor, A. Hulsmann, K. Kohler, W. Bronner
A broadband dynamic frequency divider based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process.<>
{"title":"Digital dynamic frequency dividers for broadband application up to 60 GHz","authors":"A. Thiede, M. Berroth, P. Tasker, M. Schlechtweg, J. Seibel, B. Raynor, A. Hulsmann, K. Kohler, W. Bronner","doi":"10.1109/GAAS.1993.394492","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394492","url":null,"abstract":"A broadband dynamic frequency divider based on pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.25/Ga/sub 0.75/As MODFETs and passive loads is presented. Stable operation from 28 GHz up to 51 GHz with a power consumption of 440 mW could be shown. SPICE network simulation predicts operation in the 35 GHz - 60 GHz range for a divider circuit using an advanced E/D AlGaAs/InGaAs MODFET process.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124930876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394432
B. Hughes, J. Orr, G. Martin
20 GHz low-noise and 44 GHz power MMIC amplifiers have been developed that could improve the manufacturability and cost of MILSTAR EHF phased array communication antennas. The six-stage power amplifier has 32.7 dB gain with 16.7 dBm output power and 17% power added efficiency. The chip measures 1.79 mm/sup 2/ and operates off two supplies. The four-stage LNA demonstrates 26 dB gain with 2.2 dB noise figure and 15 dB return loss. The LNA chip measures 1.18 mm/sup 2/ and operates off a single supply.<>
{"title":"MMIC 20 GHz low-noise and 44 GHz power amplifiers for phased array communication antennas designed for manufacturability","authors":"B. Hughes, J. Orr, G. Martin","doi":"10.1109/GAAS.1993.394432","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394432","url":null,"abstract":"20 GHz low-noise and 44 GHz power MMIC amplifiers have been developed that could improve the manufacturability and cost of MILSTAR EHF phased array communication antennas. The six-stage power amplifier has 32.7 dB gain with 16.7 dBm output power and 17% power added efficiency. The chip measures 1.79 mm/sup 2/ and operates off two supplies. The four-stage LNA demonstrates 26 dB gain with 2.2 dB noise figure and 15 dB return loss. The LNA chip measures 1.18 mm/sup 2/ and operates off a single supply.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122250317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394467
K. Chang, H. Wang, R. Lai, D. Lo, J. Berenz
The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<>
{"title":"A V-band monolithic InP HEMT down converter [for satellite communication]","authors":"K. Chang, H. Wang, R. Lai, D. Lo, J. Berenz","doi":"10.1109/GAAS.1993.394467","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394467","url":null,"abstract":"The authors report a monolithic V-band downconverter implemented using 0.1 /spl mu/m InAlAs-InGaAs-InP HEMT technology. The 5.0/spl times/3.0 mm/sup 2/ MMIC contains a V-band three-stage low noise amplifier, a single-balanced diode mixer, and an IF distributed amplifier. The noise figure of the LNA is less than 3 dB with an associated gain of more than 24 dB between 56 and 64 GHz. The complete downconverter demonstrates a conversion gain of more than 21 dB for the same frequency range with an LO drive of 10 dBm at 54 GHz. Total DC power consumption of the downconverter is less than 32 mW.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124216471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394482
C. K. Tien, K. Lewis, R. Philhower, H.J. Greub, J. McDonald
F-RISC/I, a reduced version of a fast RISC microprocessor, has been designed and fabricated using IBM's SBFL standard cell library and Rockwell International's 0.7 /spl mu/m HMESFET technology. F-RISC/I was designed in six months by two designers using commercial design automation tools. Simulations have shown 400 MHz operation. The chip contains 92,340 transistors on a 7/spl times/7 mm/sup 2/ die and dissipates 3.8 W. The F-RISC/I processor exemplifies the CPU architecture, circuit design, and testing developed to fully take advantage of GaAs technology for high speed computing.<>
{"title":"F-RISC/I: A 32 bit RISC processor implemented in GaAs HMESFET SBFL","authors":"C. K. Tien, K. Lewis, R. Philhower, H.J. Greub, J. McDonald","doi":"10.1109/GAAS.1993.394482","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394482","url":null,"abstract":"F-RISC/I, a reduced version of a fast RISC microprocessor, has been designed and fabricated using IBM's SBFL standard cell library and Rockwell International's 0.7 /spl mu/m HMESFET technology. F-RISC/I was designed in six months by two designers using commercial design automation tools. Simulations have shown 400 MHz operation. The chip contains 92,340 transistors on a 7/spl times/7 mm/sup 2/ die and dissipates 3.8 W. The F-RISC/I processor exemplifies the CPU architecture, circuit design, and testing developed to fully take advantage of GaAs technology for high speed computing.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126531588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394462
P. Bacon, E. Olsen, B. Cole, Y. Tajima, D. Kaczman
A dual-channel downconverter has been developed targeted for the Direct Broadcast Satellite Television market. In the established European and the developing North American DBS markets, the system design utilizes dual-polarized signals for program transmission. To reduce the receiver complexity it is desirable to have a monolithic dual-channel downconverter that minimizes parts count and reduces assembly/manufacturing costs while maintaining, and perhaps improving total system performance. This was the motivation for developing a GaAs MMIC dual-channel downconverter.<>
{"title":"A dual-channel Ku-band DBS downconverter","authors":"P. Bacon, E. Olsen, B. Cole, Y. Tajima, D. Kaczman","doi":"10.1109/GAAS.1993.394462","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394462","url":null,"abstract":"A dual-channel downconverter has been developed targeted for the Direct Broadcast Satellite Television market. In the established European and the developing North American DBS markets, the system design utilizes dual-polarized signals for program transmission. To reduce the receiver complexity it is desirable to have a monolithic dual-channel downconverter that minimizes parts count and reduces assembly/manufacturing costs while maintaining, and perhaps improving total system performance. This was the motivation for developing a GaAs MMIC dual-channel downconverter.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134072595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394498
A. I. Kayssi, K. Sakallah
A timing macromodel for GaAs DCFL logic gates is derived. It circulates the delay of a gate as a function of such parameters as transistor sizes, capacitive loading, fanout, and input transition time. For NOR gates, the simultaneous switching of two inputs is also considered. Calculations based on the derived macromodel show excellent agreement with circuit simulation.<>
{"title":"Delay modeling for GaAs DCFL circuits","authors":"A. I. Kayssi, K. Sakallah","doi":"10.1109/GAAS.1993.394498","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394498","url":null,"abstract":"A timing macromodel for GaAs DCFL logic gates is derived. It circulates the delay of a gate as a function of such parameters as transistor sizes, capacitive loading, fanout, and input transition time. For NOR gates, the simultaneous switching of two inputs is also considered. Calculations based on the derived macromodel show excellent agreement with circuit simulation.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131479761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394461
K. Kobayashi, K. Ip, A. Oki, D. Umemoto, Sahimwn Claxton, Matt Pope, Jerry Wiltz
The authors report on a GaAs HBT three-stage variable gain amplifier operating over a 0.75-5 GHz frequency band. The amplifier is broken up into a single-ended HBT LNA pre-amp, an analog current steering differential cascode cell for variable gain control, and a differential amplifier output stage. The pre-amp is required to reduce the inherently noisy differential cascode stage, and an output differential amplifier is used for drive capability and differential to single-ended conversion. The VGA has a maximum gain of 23.8 dB, an IP3 >18 dBm, and a noise figure of 6.5 dB. The variable gain control range is >35 dB. This chip demonstrates the versatility of HBT IC technology which can integrate digital, analog, and microwave circuit functions to achieve high performance in a single monolithic chip.<>
{"title":"GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier","authors":"K. Kobayashi, K. Ip, A. Oki, D. Umemoto, Sahimwn Claxton, Matt Pope, Jerry Wiltz","doi":"10.1109/GAAS.1993.394461","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394461","url":null,"abstract":"The authors report on a GaAs HBT three-stage variable gain amplifier operating over a 0.75-5 GHz frequency band. The amplifier is broken up into a single-ended HBT LNA pre-amp, an analog current steering differential cascode cell for variable gain control, and a differential amplifier output stage. The pre-amp is required to reduce the inherently noisy differential cascode stage, and an output differential amplifier is used for drive capability and differential to single-ended conversion. The VGA has a maximum gain of 23.8 dB, an IP3 >18 dBm, and a noise figure of 6.5 dB. The variable gain control range is >35 dB. This chip demonstrates the versatility of HBT IC technology which can integrate digital, analog, and microwave circuit functions to achieve high performance in a single monolithic chip.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126585096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394446
E.S. Chan, L. Lawrence
A transmitter/receiver chipset has been implemented in GaAs for a 1.3 Gbps optical communications link through free space media. The link encoding is Q=4 pulse position modulation (PPM), which economizes the power requirement of the lasers. The chipset offers an unprecedented integration of transmitter and receiver functions for this type of application.<>
{"title":"An ASIC chipset for optical communications","authors":"E.S. Chan, L. Lawrence","doi":"10.1109/GAAS.1993.394446","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394446","url":null,"abstract":"A transmitter/receiver chipset has been implemented in GaAs for a 1.3 Gbps optical communications link through free space media. The link encoding is Q=4 pulse position modulation (PPM), which economizes the power requirement of the lasers. The chipset offers an unprecedented integration of transmitter and receiver functions for this type of application.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126265818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394460
P. Katzin, B. Bedard
The authors describe the design of a narrowband, high-frequency GaAs IC switched-capacitor filter-based on a commutating RC circuit topology. They present measured performance of a two-section band-pass filter circuit with a center-frequency tunable to over 220 MHz with a -3 dB bandwidth of less than 2.6 MHz. The tuning frequency is controlled by a single-phase external clock signal at about two or four times the center-frequency, from which four-phase clock switching signals are generated on-chip. These results demonstrate that the broad tuning range and frequency stability of switched-capacitor filters is achievable well into the VHF frequency region. Such circuits can provide higher level of integration for fixed-frequency filters, clock recovery circuits, and for agile filtering in broadband communications and radar systems.<>
{"title":"A VHF switched-capacitor band-pass filter using GaAs MESFET IC technology","authors":"P. Katzin, B. Bedard","doi":"10.1109/GAAS.1993.394460","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394460","url":null,"abstract":"The authors describe the design of a narrowband, high-frequency GaAs IC switched-capacitor filter-based on a commutating RC circuit topology. They present measured performance of a two-section band-pass filter circuit with a center-frequency tunable to over 220 MHz with a -3 dB bandwidth of less than 2.6 MHz. The tuning frequency is controlled by a single-phase external clock signal at about two or four times the center-frequency, from which four-phase clock switching signals are generated on-chip. These results demonstrate that the broad tuning range and frequency stability of switched-capacitor filters is achievable well into the VHF frequency region. Such circuits can provide higher level of integration for fixed-frequency filters, clock recovery circuits, and for agile filtering in broadband communications and radar systems.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122640610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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