Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394431
D. Deakin, W. Ho, E. Sovero, J. Higgins
The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<>
{"title":"Power HBT for 44 GHz operation","authors":"D. Deakin, W. Ho, E. Sovero, J. Higgins","doi":"10.1109/GAAS.1993.394431","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394431","url":null,"abstract":"The GaAs based heterojunction bipolar transistor (HBT) has been evaluated as an amplifying device at 44 GHz. The device type measured is essentially identical to that used for power MMICs between 4 and 20 GHz. No ultra fine lithography, no special layer systems were necessary for these devices to provide excellent performance at 44 GHz. Power added efficiencies of 30% at power outputs of 250 mW and small signal gains of over 10 dB are reported. These performance levels are demonstrated by devices obtained from a high yield potentially low cost process.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125768856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394495
A. Chandna, Richard B. Brown
An experimental 1 kB GaAs MESFET static RAM using a new memory cell has been designed, fabricated and tested. The new memory cell is not subject to the destructive read problems which constrain the design of the conventional six-transistor memory cell. The memory cell also provides a much larger access current for readout than is possible using a conventional memory cell of the same area and cell power. Address access times of 1.6 ns have been obtained from a 1 kb test circuit.<>
{"title":"An asynchronous GaAs MESFET static RAM using a new current mirror memory cell","authors":"A. Chandna, Richard B. Brown","doi":"10.1109/GAAS.1993.394495","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394495","url":null,"abstract":"An experimental 1 kB GaAs MESFET static RAM using a new memory cell has been designed, fabricated and tested. The new memory cell is not subject to the destructive read problems which constrain the design of the conventional six-transistor memory cell. The memory cell also provides a much larger access current for readout than is possible using a conventional memory cell of the same area and cell power. Address access times of 1.6 ns have been obtained from a 1 kb test circuit.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131580757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394465
K. Kobayashi, L. Tran, S. Bui, A. Oki, D. Streit, Mark Rosen
The authors report on an InAlAs/InGaAs HBT Gilbert cell double-balanced mixer which upconverts a 3 GHz IF signal to an RF frequency of 5-12 GHz. The mixer cell achieves a conversion loss of between 0.8 dB and 2.6 dB from 5 to 12 GHz. The LO-RF and IF-RF isolation are better than 30 dB at an LO drive of +5 dBm across the RF band. A predistortion circuit is used to increase the linear input power range of the LO port to above +5 dBm. Discrete amplifiers designed for the IF and RF frequency ports make up the complete upconverter architecture which achieves a conversion gain of 40 dB for an RF output bandwidth of 10 GHz. The upconverter chip set fabricated with InAlAs/InGaAs HBTs demonstrates the widest gain-bandwidth performance of a Gilbert cell based upconverter compared to previous GaAs and InP HBT or Si-bipolar ICs.<>
{"title":"InAlAs/InGaAs HBT X-band double-balanced upconverter","authors":"K. Kobayashi, L. Tran, S. Bui, A. Oki, D. Streit, Mark Rosen","doi":"10.1109/GAAS.1993.394465","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394465","url":null,"abstract":"The authors report on an InAlAs/InGaAs HBT Gilbert cell double-balanced mixer which upconverts a 3 GHz IF signal to an RF frequency of 5-12 GHz. The mixer cell achieves a conversion loss of between 0.8 dB and 2.6 dB from 5 to 12 GHz. The LO-RF and IF-RF isolation are better than 30 dB at an LO drive of +5 dBm across the RF band. A predistortion circuit is used to increase the linear input power range of the LO port to above +5 dBm. Discrete amplifiers designed for the IF and RF frequency ports make up the complete upconverter architecture which achieves a conversion gain of 40 dB for an RF output bandwidth of 10 GHz. The upconverter chip set fabricated with InAlAs/InGaAs HBTs demonstrates the widest gain-bandwidth performance of a Gilbert cell based upconverter compared to previous GaAs and InP HBT or Si-bipolar ICs.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133618457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394480
S. Naboicheck, S. Ems
Three HBT monolithic microwave integrated circuit (MMIC) designs from the basis of a complete digital oscilloscope front-end which has been designed, fabricated and tested. Theses devices are integrated into a thick-film hybrid which is currently being used as the front-end for a digital sampling oscilloscope (DSO). The three devices are based on a closed loop differential amplifier with a gain of 10 dB and a bandwidth greater than 6 GHz.<>
{"title":"5 GHz sampling oscilloscope front-end based on heterojunction bipolar transistors (HBT)","authors":"S. Naboicheck, S. Ems","doi":"10.1109/GAAS.1993.394480","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394480","url":null,"abstract":"Three HBT monolithic microwave integrated circuit (MMIC) designs from the basis of a complete digital oscilloscope front-end which has been designed, fabricated and tested. Theses devices are integrated into a thick-film hybrid which is currently being used as the front-end for a digital sampling oscilloscope (DSO). The three devices are based on a closed loop differential amplifier with a gain of 10 dB and a bandwidth greater than 6 GHz.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123157551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394455
Peter, D. Seitzer
An eleven node large signal heterojunction bipolar transistors (HBT) model in hybrid-/spl pi/ configuration is investigated which is derived from HBT topology. This is the first circuit simulation model where the temperature is introduced as a variable simulation parameter using the concept of thermal resistance and pseudotemperature to account for the temperature dependent thermal conductivity of GaAs. The temperature and bias dependence of key model parameters -thermal resistance, transit time, emitter resistance, base-emitter and base-collector junction parameters- are extracted analytically from measured DC and S-parameter data in the temperature range from 20 to 160/spl deg/C using on wafer thermochuck measurements. The devices have f/sub t/ and f/sub max/ values of 40 GHz each. The verification of the proposed model is carried out on a simple oscillator circuit at 4.7 GHz, where the temperature dependence of oscillation frequency and output power of the first three harmonics is compared to measured data.<>
{"title":"Parameter extraction for HBT's temperature dependent large signal equivalent circuit model [MMIC oscillator]","authors":"Peter, D. Seitzer","doi":"10.1109/GAAS.1993.394455","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394455","url":null,"abstract":"An eleven node large signal heterojunction bipolar transistors (HBT) model in hybrid-/spl pi/ configuration is investigated which is derived from HBT topology. This is the first circuit simulation model where the temperature is introduced as a variable simulation parameter using the concept of thermal resistance and pseudotemperature to account for the temperature dependent thermal conductivity of GaAs. The temperature and bias dependence of key model parameters -thermal resistance, transit time, emitter resistance, base-emitter and base-collector junction parameters- are extracted analytically from measured DC and S-parameter data in the temperature range from 20 to 160/spl deg/C using on wafer thermochuck measurements. The devices have f/sub t/ and f/sub max/ values of 40 GHz each. The verification of the proposed model is carried out on a simple oscillator circuit at 4.7 GHz, where the temperature dependence of oscillation frequency and output power of the first three harmonics is compared to measured data.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130016854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394500
T. Saito, N. Hidaka, Y. Ohashi, T. Shimura, Y. Aoki
The authors developed V-band monolithic active-gate and active-drain mixers with a single-balance configuration. The HEMTs in both active mixers have an AlGaAs/GaAs structure and gates 0.15 /spl mu/m long and 100 /spl mu/m wide. The single-balanced active-gate mixer has a maximum conversion gain of -4.3 dB and only 2.5 dBm LO drive at 60-GHz. The gate mixer has a noise figure of 5.3 dB at 58 GHz and 0 dBm LO drive power. The single-balanced active-drain mixer has a maximum conversion gain of -6 dB and 13.5 dBm LO drive at 60 GHz. The drain mixer has a noise figure of 6.8 dB at 58 GHz and 8.5 dBm LO drive. The RF performances of active-gate and active-drain mixers fabricated on the same wafer are compared.<>
{"title":"HEMT-based MMIC single-balanced mixers for 60-GHz indoor communication systems","authors":"T. Saito, N. Hidaka, Y. Ohashi, T. Shimura, Y. Aoki","doi":"10.1109/GAAS.1993.394500","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394500","url":null,"abstract":"The authors developed V-band monolithic active-gate and active-drain mixers with a single-balance configuration. The HEMTs in both active mixers have an AlGaAs/GaAs structure and gates 0.15 /spl mu/m long and 100 /spl mu/m wide. The single-balanced active-gate mixer has a maximum conversion gain of -4.3 dB and only 2.5 dBm LO drive at 60-GHz. The gate mixer has a noise figure of 5.3 dB at 58 GHz and 0 dBm LO drive power. The single-balanced active-drain mixer has a maximum conversion gain of -6 dB and 13.5 dBm LO drive at 60 GHz. The drain mixer has a noise figure of 6.8 dB at 58 GHz and 8.5 dBm LO drive. The RF performances of active-gate and active-drain mixers fabricated on the same wafer are compared.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132882701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394470
H. Hida, M. Tokushima, T. Maeda, M. Ishikawa, M. Fukaishi, K. Numata, Y. Ohno
A new technology for fabricating 0.25 /spl mu/m gate E/D-heterojunction FET LSIs is developed as a step towards the development of ultralow supply voltage LSIs. This technology, which is based upon all dry-process techniques, includes the formation of a 0.25 /spl mu/m gate opening through the use of optical lithography and inner SiO/sub 2/ sidewalls. The f/sub max/ and the g/sub max/ for a Y-shaped gate E-HJFET are 108 GHz and 530 mS/mm, respectively. Excellent performances are obtained with DCFL ring oscillators using n-AlGaAs/i-InGaAs pseudomorphic E/D-HJFETs. These include 18 ps/G unloaded delay and 109 ps/G loaded delay (FI=FO=3, L=1 mm) with 0.15 mW/G at a low supply voltage of 0.6 V, where inverters have a sufficient noise margin of more than 180 mV. Also, 10 Gbps error-free operation of a selector switch is demonstrated with 9.4 mW at 0.6 V.<>
{"title":"0.6 V suppy voltage 0.25 /spl mu/m E/D-HJFET(IS/sup 3/T) LSI technology for low power consumption and high speed LSIs","authors":"H. Hida, M. Tokushima, T. Maeda, M. Ishikawa, M. Fukaishi, K. Numata, Y. Ohno","doi":"10.1109/GAAS.1993.394470","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394470","url":null,"abstract":"A new technology for fabricating 0.25 /spl mu/m gate E/D-heterojunction FET LSIs is developed as a step towards the development of ultralow supply voltage LSIs. This technology, which is based upon all dry-process techniques, includes the formation of a 0.25 /spl mu/m gate opening through the use of optical lithography and inner SiO/sub 2/ sidewalls. The f/sub max/ and the g/sub max/ for a Y-shaped gate E-HJFET are 108 GHz and 530 mS/mm, respectively. Excellent performances are obtained with DCFL ring oscillators using n-AlGaAs/i-InGaAs pseudomorphic E/D-HJFETs. These include 18 ps/G unloaded delay and 109 ps/G loaded delay (FI=FO=3, L=1 mm) with 0.15 mW/G at a low supply voltage of 0.6 V, where inverters have a sufficient noise margin of more than 180 mV. Also, 10 Gbps error-free operation of a selector switch is demonstrated with 9.4 mW at 0.6 V.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133290379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394487
P. O'Neil, B. Bernhardt, F. Nikpourian, C. Della, Y. Abad, G. Hansell
Compound Semiconductor (CS-1) is Motorola's first production-oriented gallium-arsenide integrated-circuit fabrication facility. Initiated in the Fall of 1990, CS-1 is a state-of-the-art manufacturing facility designed to support the growing internal Motorola needs for GaAs ICs for consumer products. The authors overview current CS-1 process flows, low-cost processing methodologies, online production monitoring, and fast cycle time capabilities.<>
{"title":"GaAs integrated circuit fabrication at Motorola","authors":"P. O'Neil, B. Bernhardt, F. Nikpourian, C. Della, Y. Abad, G. Hansell","doi":"10.1109/GAAS.1993.394487","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394487","url":null,"abstract":"Compound Semiconductor (CS-1) is Motorola's first production-oriented gallium-arsenide integrated-circuit fabrication facility. Initiated in the Fall of 1990, CS-1 is a state-of-the-art manufacturing facility designed to support the growing internal Motorola needs for GaAs ICs for consumer products. The authors overview current CS-1 process flows, low-cost processing methodologies, online production monitoring, and fast cycle time capabilities.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114605082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394497
K. Nah, R. Philhower, H. Greub, J. McDonald
A high speed register file has been designed that is well-suited for achieving the speed potential of a fast but yield-limited technology such as GaAs/AlGaAs HBT. Descriptions of address driver, write, and threshold voltage generator circuits developed are presented. The test strategy utilizes two linear feedback shift registers (LFSRs) to provide address and data patterns to the register file. A match circuit verifies valid memory function and indicates read access time. The test results indicate a read access time of 500 ps.<>
{"title":"A 500 ps 32 /spl times/ 8 register file implemented in GaAs/AlGaAs HBTs [F-RISC/G processor]","authors":"K. Nah, R. Philhower, H. Greub, J. McDonald","doi":"10.1109/GAAS.1993.394497","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394497","url":null,"abstract":"A high speed register file has been designed that is well-suited for achieving the speed potential of a fast but yield-limited technology such as GaAs/AlGaAs HBT. Descriptions of address driver, write, and threshold voltage generator circuits developed are presented. The test strategy utilizes two linear feedback shift registers (LFSRs) to provide address and data patterns to the register file. A match circuit verifies valid memory function and indicates read access time. The test results indicate a read access time of 500 ps.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114473256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1993-10-10DOI: 10.1109/GAAS.1993.394438
M. Biedenbender, J. Lee, K. Tan, P. Liu, A. Freudenthal, D. Streit, G. Luong, R. Lai, M. Aust, B. Allen, T. Lin, H. Yen
The authors have developed a reproducible, high yield and high performance power HEMT Ka-band MMIC production process based on pseudomorphic AlGaAs/InGaAs/GaAs HEMTs. The details of the fabrication process and Ka-band MMIC power amplifier performance from 60 wafers are presented. State-of-the-art power performance have been achieved on both devices and MMICs. Single-stage MMICs with 400 /spl mu/m devices have demonstrated output power of 240 mW (0.6 W/mm) at 37 GHz with a power gain of 7.8 dB and power-added efficiency of 40%. The Ka-band MMIC power amplifiers have demonstrated output power of 1.3 W, 9 dB gain and 24% power added efficiency. Furthermore, the power MMIC HEMT process demonstrated a RF MMIC circuit yield of 25.8% for a total of 6936 possible chips from 60 wafers.<>
{"title":"A power HEMT production process for high-efficiency Ka-band MMIC power amplifiers","authors":"M. Biedenbender, J. Lee, K. Tan, P. Liu, A. Freudenthal, D. Streit, G. Luong, R. Lai, M. Aust, B. Allen, T. Lin, H. Yen","doi":"10.1109/GAAS.1993.394438","DOIUrl":"https://doi.org/10.1109/GAAS.1993.394438","url":null,"abstract":"The authors have developed a reproducible, high yield and high performance power HEMT Ka-band MMIC production process based on pseudomorphic AlGaAs/InGaAs/GaAs HEMTs. The details of the fabrication process and Ka-band MMIC power amplifier performance from 60 wafers are presented. State-of-the-art power performance have been achieved on both devices and MMICs. Single-stage MMICs with 400 /spl mu/m devices have demonstrated output power of 240 mW (0.6 W/mm) at 37 GHz with a power gain of 7.8 dB and power-added efficiency of 40%. The Ka-band MMIC power amplifiers have demonstrated output power of 1.3 W, 9 dB gain and 24% power added efficiency. Furthermore, the power MMIC HEMT process demonstrated a RF MMIC circuit yield of 25.8% for a total of 6936 possible chips from 60 wafers.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126908006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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