Journal of Crystal Growth最新文献

英文中文

Growth of brucite (Mg(OH)2) on portlandite (Ca(OH)2)

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-18 DOI: 10.1016/j.jcrysgro.2025.128071

I. Galan , C. Baumann , M. Sakoparnig , C. Grengg , M. Dietzel

The potential protective effect of brucite (Mg(OH)₂) grown on portlandite (Ca(OH)₂) was analysed. Single crystals of portlandite were synthesized and exposed to Mg²⁺-containing solutions and the influence of the central parameters was analysed: (i) magnesium ion source (MgCl₂ and MgSO₄) (ii) initial Mg²⁺ concentration (0.01–1 mol/l), (iii) crystal surface to solution volume ratio, and (iv) duration of experiment. Solids and solutions were characterised by means of FTIR, ICP-OES, pH measurements, SEM and EPMA. Additionally, thermodynamic calculations were performed. The results showed that the morphology and thickness and thus the protective properties of the brucite layer were conditioned by the Mg²⁺ and Ca²⁺ concentration in the solution. Brucite layers grown during exposure to higher initial Mg²⁺ concentration were denser and thinner, offering better protection against further dissolution. In MgCl₂ solutions, the precipitation of a compact brucite layer was accompanied by the formation of an empty cavity between brucite and portlandite. In MgSO₄ solutions the space between brucite and portlandite was filled with gypsum as saturation conditions were reached providing extra protection but also leading to potential crack formation in the brucite layer.

{"title":"Growth of brucite (Mg(OH)2) on portlandite (Ca(OH)2)","authors":"I. Galan , C. Baumann , M. Sakoparnig , C. Grengg , M. Dietzel","doi":"10.1016/j.jcrysgro.2025.128071","DOIUrl":"10.1016/j.jcrysgro.2025.128071","url":null,"abstract":"<div><div>The potential protective effect of brucite (Mg(OH)<sub>2</sub>) grown on portlandite (Ca(OH)<sub>2</sub>) was analysed. Single crystals of portlandite were synthesized and exposed to Mg<sup>2+</sup>-containing solutions and the influence of the central parameters was analysed: (i) magnesium ion source (MgCl<sub>2</sub> and MgSO<sub>4</sub>) (ii) initial Mg<sup>2+</sup> concentration (0.01–1 mol/l), (iii) crystal surface to solution volume ratio, and (iv) duration of experiment. Solids and solutions were characterised by means of FTIR, ICP-OES, pH measurements, SEM and EPMA. Additionally, thermodynamic calculations were performed. The results showed that the morphology and thickness and thus the protective properties of the brucite layer were conditioned by the Mg<sup>2+</sup> and Ca<sup>2+</sup> concentration in the solution. Brucite layers grown during exposure to higher initial Mg<sup>2+</sup> concentration were denser and thinner, offering better protection against further dissolution. In MgCl<sub>2</sub> solutions, the precipitation of a compact brucite layer was accompanied by the formation of an empty cavity between brucite and portlandite. In MgSO<sub>4</sub> solutions the space between brucite and portlandite was filled with gypsum as saturation conditions were reached providing extra protection but also leading to potential crack formation in the brucite layer.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"653 ","pages":"Article 128071"},"PeriodicalIF":1.7,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heteroepitaxial growth of PMN-PT thin films on SrTiO3 buffered III-V semiconductor GaAs by pulsed laser deposition

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-16 DOI: 10.1016/j.jcrysgro.2025.128070

Xiaona Du , Xin Ning

Relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) thin films were epitaxially grown on (001)-oriented SrTiO₃ buffered III-V semiconductor GaAs substrates by pulsed laser deposition. Detailed microstructural investigations of the films were carried out using X-ray diffraction, atomic force microscopy and transmission electron microscopy. Local piezoresponse force microscopy hysteresis loops confirm the ferroelectric nature of the PMN-PT thin films on GaAs. The results have demonstrated the practicality of integrating epitaxial PMN-PT films on semiconductor GaAs, which may pave the way to develop III-V semiconductor based opto-mechanical devices.

引用次数: 0

Detailed study of HVPE-GaN doped with silicon

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-16 DOI: 10.1016/j.jcrysgro.2025.128069

M. Amilusik , T. Sochacki , A. Jaroszynska , M. Fijalkowski , B. Lucznik , M. Iwinska , M. Zajac , D. Wlodarczyk , R. Jakiela , M. Bockowski

The purpose of this work was to optimize the silicon doping process in gallium nitride grown using the halide vapor phase epitaxy method. Five crystal growth experiments were carried out to investigate the influence of reagent flow on the incorporation of the donor dopant. Additionally, the study examined the role of growth morphology, which was found to significantly affect the uniformity of silicon incorporation and free carrier distribution in the crystals. Crystals in this work were grown on native ammonothermal substrates of high structural quality. Silicon was the only intentional donor dopant introduced into the growth zone in the form of gaseous precursor, dichlorosilane. The structural quality, concentrations of incorporated dopants and free carriers, were analyzed for each grown crystal. The results indicated that silicon was the only electrically active, statistically relevant dopant in all of the samples. The rate of hydrogen chloride flow in the dichlorosilane line was correlated with the final concentration of silicon in the samples. The silicon and free carrier concentrations of up to 10¹⁹ cm⁻³ were noted. Silicon incorporation appeared to be non-uniform regardless of the growth conditions. Each sample exhibited a gradient of silicon and free carrier concentrations along the growth direction. It was shown that the cause of silicon gradient in gallium nitride crystals was associated with the silicon deposition inside the reactor, in the dichlorosilane line, as well as with the crystal’s growth morphology.

{"title":"Detailed study of HVPE-GaN doped with silicon","authors":"M. Amilusik , T. Sochacki , A. Jaroszynska , M. Fijalkowski , B. Lucznik , M. Iwinska , M. Zajac , D. Wlodarczyk , R. Jakiela , M. Bockowski","doi":"10.1016/j.jcrysgro.2025.128069","DOIUrl":"10.1016/j.jcrysgro.2025.128069","url":null,"abstract":"<div><div>The purpose of this work was to optimize the silicon doping process in gallium nitride grown using the halide vapor phase epitaxy method. Five crystal growth experiments were carried out to investigate the influence of reagent flow on the incorporation of the donor dopant. Additionally, the study examined the role of growth morphology, which was found to significantly affect the uniformity of silicon incorporation and free carrier distribution in the crystals. Crystals in this work were grown on native ammonothermal substrates of high structural quality. Silicon was the only intentional donor dopant introduced into the growth zone in the form of gaseous precursor, dichlorosilane. The structural quality, concentrations of incorporated dopants and free carriers, were analyzed for each grown crystal. Theresults indicated that silicon was the only electrically active, statistically relevant dopant in all of the samples. The rate of hydrogen chloride flow in the dichlorosilane line was correlated with the final concentration of silicon in the samples. The silicon and free carrier concentrations of up to 10<sup>19</sup> cm<sup>−3</sup> were noted. Silicon incorporation appeared to be non-uniform regardless of the growth conditions. Each sample exhibited a gradient of silicon and free carrier concentrations along the growth direction. It was shown that the cause of silicon gradient in gallium nitride crystals was associated with the silicon deposition inside the reactor, in the dichlorosilane line, as well as with the crystal’s growth morphology.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"653 ","pages":"Article 128069"},"PeriodicalIF":1.7,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143093088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

About crystal growth of hybrid bromide perovskite single crystals

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-13 DOI: 10.1016/j.jcrysgro.2025.128067

Silvia Rizzato , Marianna Testa , Massimo Moret

The most conventional way to grow centimetres sized MAPbBr₃ (MA = methyl ammonium) perovskite single crystals is the temperature rising method from dimethylformamide solution in which MAPbBr₃ shows an inverse solubility/T dependence. In the present study a well-defined crystallization procedure was provided. The collective and individual effect of the many experimental variables involved were highlighted and a set of guidelines were produced to control nucleation, crystal size and the macro/micro-morphology of the crystals. Several critical aspects connected to the process or environmental conditions, such as moisture level or total reaction time, have been revealed and investigated to ensure high products reproducibility between batches and over time. The efficient self-healing capability of MAPbBr₃ single crystals has been confirmed and exploited to induce a regeneration process.

引用次数: 0

ZnO-Nd2O3 nanocomposites: Solution combustion synthesis, structural studies and UV assisted photocatalytic degradation of paracetamol

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-10 DOI: 10.1016/j.jcrysgro.2025.128056

Nidhi Sharma, Sumita Sood

Solution combustion synthesis route was explored for developing ZnO-Nd₂O₃ nanocomposites/heterostructures along with pristine ZnO and Nd₂O₃ using tartaric acid as fuel. From the XRD (X-Ray diffraction) analysis, chemical identity and successful formation of heterostructures was ascertained. Average crystallite size, lattice parameters, microstrain and dislocation density values were evaluated from the XRD data, which were found to be in line with earlier reported studies and suggested the fusing of ZnO and Nd₂O₃crystallites to form bigger composite crystals. Surface characterization and grain size estimation was done using FESEM (Field Emission Scanning Electron Microscopy), which indicated that overall morphology and grain size of ZnO-Nd₂O₃ nanocomposites was an average of individual characteristics of ZnO and Nd₂O₃ nanomaterials. Elemental composition studies were carried out using EDS (Energy Dispersive Spectroscopy), which depicted the high chemical purity of as synthesized samples. Further, preliminary investigations were performed to assess the photocatalytic activities of as prepared samples by subjecting them to the UV assisted degradation of paracetamol. The ZnO-Nd₂O₃ nanocomposites were found to exhibit maximum photocatalytic efficiency followed by ZnO and Nd₂O₃. The high photocatalytic efficiency of heterostructures was attributed to the higher specific surface area and better separation of charge carriers mediated by Nd³⁺ ions. A very little loss of photocatalytic activity was observed for ZnO-Nd₂O₃ heterostructures when recovered and reused for five consecutive cycles, which was attributed to loss of catalyst after each cycle of recovery and preoccupied active sites of adsorption.

{"title":"ZnO-Nd2O3 nanocomposites: Solution combustion synthesis, structural studies and UV assisted photocatalytic degradation of paracetamol","authors":"Nidhi Sharma, Sumita Sood","doi":"10.1016/j.jcrysgro.2025.128056","DOIUrl":"10.1016/j.jcrysgro.2025.128056","url":null,"abstract":"<div><div>Solution combustion synthesis route was explored for developing ZnO-Nd<sub>2</sub>O<sub>3</sub> nanocomposites/heterostructures along with pristine ZnO and Nd<sub>2</sub>O<sub>3</sub> using tartaric acid as fuel. From the XRD (X-Ray diffraction) analysis, chemical identity and successful formation of heterostructures was ascertained. Average crystallite size, lattice parameters, microstrain and dislocation density values were evaluated from the XRD data, which were found to be in line with earlier reported studies and suggested the fusing of ZnO and Nd<sub>2</sub>O<sub>3</sub>crystallites to form bigger composite crystals. Surface characterization and grain size estimation was done using FESEM (Field Emission Scanning Electron Microscopy), which indicated that overall morphology and grain size of ZnO-Nd<sub>2</sub>O<sub>3</sub> nanocomposites was an average of individual characteristics of ZnO and Nd<sub>2</sub>O<sub>3</sub> nanomaterials. Elemental composition studies were carried out using EDS (Energy Dispersive Spectroscopy), which depicted the high chemical purity of as synthesized samples. Further, preliminary investigations were performed to assess the photocatalytic activities of as prepared samples by subjecting them to the UV assisted degradation of paracetamol. The ZnO-Nd<sub>2</sub>O<sub>3</sub> nanocomposites were found to exhibit maximum photocatalytic efficiency followed by ZnO and Nd<sub>2</sub>O<sub>3</sub>. The high photocatalytic efficiency of heterostructures was attributed to the higher specific surface area and better separation of charge carriers mediated by Nd<sup>3+</sup> ions. A very little loss of photocatalytic activity was observed for ZnO-Nd<sub>2</sub>O<sub>3</sub> heterostructures when recovered and reused for five consecutive cycles, which was attributed to loss of catalyst after each cycle of recovery and preoccupied active sites of adsorption.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"653 ","pages":"Article 128056"},"PeriodicalIF":1.7,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of UHV annealing on morphology and roughness of sputtered Si(1 1 1)-(7 × 7) surfaces

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-08 DOI: 10.1016/j.jcrysgro.2025.128055

Jagadish Chandra Mahato , Anupam Roy , Rajib Batabyal , Debolina Das , Rahul Gorain , Tuya Dey , B.N. Dev

Ar⁺ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy Ar⁺ ion sputtering and subsequent annealing on the Si(1 1 1)-(7 × 7) surfaces under ultrahigh vacuum (UHV) condition. Using in-situ scanning tunnelling microscopy (STM) we have compared the morphological changes to the Si(1 1 1)-(7 × 7) surfaces before and after the sputtering process. Following 500 eV Ar⁺ ion sputtering, the atomically flat Si(1 1 1)-(7 × 7) surface becomes amorphous. The average root mean square (rms) surface roughness (

σ_{avg}

) of the sputtered surface and that following post-annealing at different temperatures (500–700 °C) under UHV have been measured as a function of STM scan size. While, annealing at ∼500 °C shows no detectable changes in the surface morphology, recrystallization process starts at ∼600 °C. For the sputtered samples annealed at temperatures ≥600 °C,

{l o g σ}_{avg}

varies linearly at lower length scales and approaches a saturation value of ∼0.6 nm for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, 650 °C is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process.

{"title":"Effect of UHV annealing on morphology and roughness of sputtered Si(1 1 1)-(7 × 7) surfaces","authors":"Jagadish Chandra Mahato , Anupam Roy , Rajib Batabyal , Debolina Das , Rahul Gorain , Tuya Dey , B.N. Dev","doi":"10.1016/j.jcrysgro.2025.128055","DOIUrl":"10.1016/j.jcrysgro.2025.128055","url":null,"abstract":"<div><div>Ar<sup>+</sup> ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy Ar<sup>+</sup> ion sputtering and subsequent annealing on the Si(1 1 1)-(7 × 7) surfaces under ultrahigh vacuum (UHV) condition. Using <em>in-situ</em> scanning tunnelling microscopy (STM) we have compared the morphological changes to the Si(1 1 1)-(7 × 7) surfaces before and after the sputtering process. Following 500 eV Ar<sup>+</sup> ion sputtering, the atomically flat Si(1 1 1)-(7 × 7) surface becomes amorphous. The average root mean square (rms) surface roughness (<span><math><msub><mi>σ</mi><mrow><mi>avg</mi></mrow></msub></math></span>) of the sputtered surface and that following post-annealing at different temperatures (500–700 °C) under UHV have been measured as a function of STM scan size. While, annealing at ∼500 °C shows no detectable changes in the surface morphology, recrystallization process starts at ∼600 °C. For the sputtered samples annealed at temperatures ≥600 °C, <span><math><msub><mrow><mi>l</mi><mi>o</mi><mi>g</mi><mi>σ</mi></mrow><mrow><mi>avg</mi></mrow></msub></math></span> varies linearly at lower length scales and approaches a saturation value of ∼0.6 nm for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, 650 °C is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"653 ","pages":"Article 128055"},"PeriodicalIF":1.7,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143128604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-06 DOI: 10.1016/j.jcrysgro.2025.128054

Haotian Xue, Elia Palmese, Ben J. Sekely, Dakota Gray-Boneker, Antonio Gonzalez, Daniel J. Rogers, Brian D. Little, Fred A. Kish, Jr, John F. Muth, Jonathan J. Wierer, Jr

Data on the growth and characterization of AlInN/GaN superlattices (SLs) with varying AlInN fractions are presented. The SLs are grown using metal–organic chemical vapor deposition (MOCVD) and have AlInN fractions (AlInN thickness/SL period thickness) from 1 to 0.125 to explore the required GaN thickness to achieve good surface morphology. The SLs with AlInN fractions between 0.992 and 0.645 exhibited well-defined atomic steps and minimal surface defects, while lower fractions resulted in rougher surfaces. The highest AlInN fraction sample (0.992) has less than a monolayer of GaN but exhibits excellent surface morphology comparable to lower fractions. Energy-dispersive X-ray spectroscopy analysis on the highest 0.922 AlInN fraction sample revealed the expected periodic Ga incorporation but also a quaternary composition throughout with a baseline amount of Ga. Spectroscopic ellipsometry measurements demonstrated that the SLs provide refractive index tunability between GaN and AlInN. The results show that SLs maintain a smooth surface morphology across a wide range of AlInN fractions, offering excellent design flexibility for device applications.

{"title":"Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions","authors":"Haotian Xue, Elia Palmese, Ben J. Sekely, Dakota Gray-Boneker, Antonio Gonzalez, Daniel J. Rogers, Brian D. Little, Fred A. Kish, Jr, John F. Muth, Jonathan J. Wierer, Jr","doi":"10.1016/j.jcrysgro.2025.128054","DOIUrl":"10.1016/j.jcrysgro.2025.128054","url":null,"abstract":"<div><div>Data on the growth and characterization of AlInN/GaN superlattices (SLs) with varying AlInN fractions are presented. The SLs are grown using metal–organic chemical vapor deposition (MOCVD) and have AlInN fractions (AlInN thickness/SL period thickness) from 1 to 0.125 to explore the required GaN thickness to achieve good surface morphology. The SLs with AlInN fractions between 0.992 and 0.645 exhibited well-defined atomic steps and minimal surface defects, while lower fractions resulted in rougher surfaces. The highest AlInN fraction sample (0.992) has less than a monolayer of GaN but exhibits excellent surface morphology comparable to lower fractions. Energy-dispersive X-ray spectroscopy analysis on the highest 0.922 AlInN fraction sample revealed the expected periodic Ga incorporation but also a quaternary composition throughout with a baseline amount of Ga. Spectroscopic ellipsometry measurements demonstrated that the SLs provide refractive index tunability between GaN and AlInN. The results show that SLs maintain a smooth surface morphology across a wide range of AlInN fractions, offering excellent design flexibility for device applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128054"},"PeriodicalIF":1.7,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microwave-assisted sol-gel synthesis of Li-Co doped zinc oxide nanoparticles: Investigating the effects of codoping on structural, optical, and magnetic properties for spintronic applications 微波辅助溶胶-凝胶合成掺杂锂-钴的纳米氧化锌颗粒：研究编码掺杂对自旋电子应用的结构、光学和磁学特性的影响

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-01-02 DOI: 10.1016/j.jcrysgro.2025.128053

Kaushlendra Pandey , Manoj Kumar , Sunil Chauhan , Ravi Shankar Raman

In this study, we report a cost-effective microwave-assisted sol–gel synthesis of ZnO and Li-Co co-doped ZnO (Zn_1-2xLi_xCo_xO) nanoparticles. The synthesized Zn_1-2xLi_xCo_xO (x = 0, 0.5, 1.0, 2.0 %) nanoparticles were characterized to study their structural, optical, and magnetic properties. The x-ray diffraction analysis led to the identification of the hexagonal wurtzite phase of the prepared samples. The Rietveld refinement of x-ray diffraction patterns was conducted to ascertain the phase purity of the samples. The W-H analysis of the XRD results has been carried out to estimate the several key parameters such as crystallite size, stress, strain and deformation energy density of the samples. The vibrational properties of the prepared nanoparticles were studied by Fourier Transform Infrared spectroscope. The prepared nanoparticles were observed to have a band gap ranging from 3.3 to 3.1 eV as measured by UV–visible spectroscopy. The co-doping of Li and Co elements in ZnO lattice altered its intrinsic properties, particularly its magnetic properties. The vibrating sample magnetometer measurements showed that the nanoparticles exhibit ferromagnetic behavior at room temperature with 2 % dopant concentration. The value of the of the Coercive field, saturation magnetization and remnant magnetization of the ZLC 2.0 sample were found to be 508 gauss, 0.00365 emu/gram and 4.008 × 10^-4 emu/gram, respectively. This makes Zn_1-2xLi_xCo_xO samples a potential candidate for spintronics and optoelectronic device applications.

{"title":"Microwave-assisted sol-gel synthesis of Li-Co doped zinc oxide nanoparticles: Investigating the effects of codoping on structural, optical, and magnetic properties for spintronic applications","authors":"Kaushlendra Pandey , Manoj Kumar , Sunil Chauhan , Ravi Shankar Raman","doi":"10.1016/j.jcrysgro.2025.128053","DOIUrl":"10.1016/j.jcrysgro.2025.128053","url":null,"abstract":"<div><div>In this study, we report a cost-effective microwave-assisted sol–gel synthesis of ZnO and Li-Co co-doped ZnO (Zn<sub>1-2x</sub>Li<sub>x</sub>Co<sub>x</sub>O) nanoparticles. The synthesized Zn<sub>1-2x</sub>Li<sub>x</sub>Co<sub>x</sub>O (x = 0, 0.5, 1.0, 2.0 %) nanoparticles were characterized to study their structural, optical, and magnetic properties. The x-ray diffraction analysis led to the identification of the hexagonal wurtzite phase of the prepared samples. The Rietveld refinement of x-ray diffraction patterns was conducted to ascertain the phase purity of the samples. The W-H analysis of the XRD results has been carried out to estimate the several key parameters such as crystallite size, stress, strain and deformation energy density of the samples. The vibrational properties of the prepared nanoparticles were studied by Fourier Transform Infrared spectroscope. The prepared nanoparticles were observed to have a band gap ranging from 3.3 to 3.1 eV as measured by UV–visible spectroscopy. The co-doping of Li and Co elements in ZnO lattice altered its intrinsic properties, particularly its magnetic properties. The vibrating sample magnetometer measurements showed that the nanoparticles exhibit ferromagnetic behavior at room temperature with 2 % dopant concentration. The value of the of the Coercive field, saturation magnetization and remnant magnetization of the ZLC 2.0 sample were found to be 508 gauss, 0.00365 emu/gram and 4.008 × 10<sup>-4</sup> emu/gram, respectively. This makes Zn<sub>1-2x</sub>Li<sub>x</sub>Co<sub>x</sub>O samples a potential candidate for spintronics and optoelectronic device applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128053"},"PeriodicalIF":1.7,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143182898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A modified microscopic cellular automaton model for the simulation of microstructure evolution during solidification/melting of nickel-based superalloys

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2024-12-26 DOI: 10.1016/j.jcrysgro.2024.128052

Zhentao Wang, Zhixian Chen, Qingyu Zhang, Xiaonan Wang

A quantitatively modified microscopic cellular automaton model (CA) is established to simulate the microstructure evolution during solidification/melting of IN718 nickel-based superalloys. As compared to the original CA model, the modified CA model has the merits of solute conservation and the inherent incorporation of the melting/solidification algorithms. Inspired by the diffuse interface models, the present model optimizes the diffusion and solute redistribution, and the solute conservation within the computational domain is achieved restrictively. The KGT (Kurz-Giovanola-Trivedi) model was used to calculate the solidification/melting kinetics according to the undercooling values. After testing the grid size independency and grid anisotropy of the modified CA model, it was applied to simulate the growth of multiequiaxed and columnar dendrites of the IN718 alloy under different cooling rates, and the segregation of solute Nb in the liquid phase was quantified. The results reveal that the segregation of Nb was weakened with higher cooling rates during solidification. The simulation of dendritic coarsening during isothermal holding was carried out by the modified CA model in a straightforward manner after the solidified dendrites were obtained. The simulation results effectively mimicked the coarsening behavior driven by the coherent influences of solidification and melting mechanisms, which were uncapable to be reproduced by the original CA model. This study provides a powerful tool with high computation efficiency for better understanding the microstructure evolution mechanisms in nickel-based superalloys during solidification and melting in practical engineering incidents.

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引用次数: 0

Synthesis of α-Al2O3 nanosize by combustion reaction using sucrose and graphene oxide as fuel precursors

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2024-12-24 DOI: 10.1016/j.jcrysgro.2024.128048

Vu T. Tan , La The Vinh , Nguyen Hoang Tuan , Nguyen Van Doan , Tran Tuan Diep , Pham Van Tuan

The α-Al₂O₃ nano-sized particles were generated employing a combustion reaction using sucrose and graphene oxide as fuel precursors. The synthesized α-Al₂O₃ material was analyzed using scanning electron microscopy (SEM), brunauer-emmett-teller (BET), X-ray diffraction (XRD), dynamic light scattering (DLS), and high-resolution transmission electron microscopy (TEM) techniques. XRD study identified α-Al₂O₃ nanocrystals from aluminum oxide. The results of the SEM and TEM investigations demonstrated that the sucrose samples had particle sizes in the nanoscale range. The study found that higher sucrose concentrations resulted in smaller α-Al₂O₃ particles. The α-Al₂O₃ nano-powder had an average diameter of less than 30 nm. Sucrose and GO were coupled for the first time to fabricate nanosized α-Al₂O₃ powders. The findings may pave the way for new methods of producing stable aluminum nanoparticles in α-phase, which might be useful in a variety of applications.

{"title":"Synthesis of α-Al2O3 nanosize by combustion reaction using sucrose and graphene oxide as fuel precursors","authors":"Vu T. Tan , La The Vinh , Nguyen Hoang Tuan , Nguyen Van Doan , Tran Tuan Diep , Pham Van Tuan","doi":"10.1016/j.jcrysgro.2024.128048","DOIUrl":"10.1016/j.jcrysgro.2024.128048","url":null,"abstract":"<div><div>The α-Al<sub>2</sub>O<sub>3</sub> nano-sized particles were generated employing a combustion reaction using sucrose and graphene oxide as fuel precursors. The synthesized α-Al<sub>2</sub>O<sub>3</sub> material was analyzed using scanning electron microscopy (SEM), brunauer-emmett-teller (BET), X-ray diffraction (XRD), dynamic light scattering (DLS), and high-resolution transmission electron microscopy (TEM) techniques. XRD study identified α-Al<sub>2</sub>O<sub>3</sub> nanocrystals from aluminum oxide. The results of the SEM and TEM investigations demonstrated that the sucrose samples had particle sizes in the nanoscale range. The study found that higher sucrose concentrations resulted in smaller α-Al<sub>2</sub>O<sub>3</sub> particles. The α-Al<sub>2</sub>O<sub>3</sub> nano-powder had an average diameter of less than 30 nm. Sucrose and GO were coupled for the first time to fabricate nanosized α-Al<sub>2</sub>O<sub>3</sub> powders. The findings may pave the way for new methods of producing stable aluminum nanoparticles in α-phase, which might be useful in a variety of applications.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"652 ","pages":"Article 128048"},"PeriodicalIF":1.7,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143183758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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