Journal of Crystal Growth最新文献

{"title":"Rapid prediction of interface morphology and oxygen transportation in crystal growth based on the response surface method","authors":"Dongxiu Yan ,&nbsp;Ziyi Guo ,&nbsp;Xue Chen ,&nbsp;Kai Li ,&nbsp;Jianfu Zhao ,&nbsp;Wenrui Hu","doi":"10.1016/j.jcrysgro.2024.127935","DOIUrl":"10.1016/j.jcrysgro.2024.127935","url":null,"abstract":"<div><div>In this paper, a two-dimensional (2D) axisymmetric model subjected to the gas shear effect and thermal Marangoni effect is developed. It is highlighted that the growth conditions of pulling rate, gas flow rate, crucible, and crystal rotation rates play important roles in determining the crystal behaviors of interface morphology and oxygen transportation during the crystal growth process. A Kriging-based response surface method (RSM) is proposed to rapidly predict the crystal growth behaviors, indicating that the outputs of interface morphology and oxygen concentration can be predicted by the corresponding input growth conditions. By global sensitivity analysis, the pulling rate is identified as the key factor in determining the interface morphology, while gas flow rate and crucible rotation rate have a greater effect on oxygen transportation. Furthermore, these two inputs with the highest sensitivities are used to construct the response surface and predict unknown oxygen transportation. When compared with the numerical simulations, the presented model proves to be an effective tool for reducing measurement time and improving accuracy in predicting crystal behaviors. Our findings provide important insights into understanding the crystal growth process under different growth conditions and inspire a data-driven method for crystal growth prediction.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127935"},"PeriodicalIF":1.7,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advances of rare earth orthoferrite RFeO3 magneto-optical single crystals","authors":"Qixin Li ,&nbsp;Jie Zhou ,&nbsp;Jiamin Shang ,&nbsp;Hui Shen ,&nbsp;Leifan Li ,&nbsp;Fei Wang ,&nbsp;Xuanbing Shen ,&nbsp;Tian Tian ,&nbsp;A.M. Kalashnikova ,&nbsp;Anhua Wu ,&nbsp;Jiayue Xu","doi":"10.1016/j.jcrysgro.2024.127939","DOIUrl":"10.1016/j.jcrysgro.2024.127939","url":null,"abstract":"<div><div>Currently, rare earth orthoferrites RFeO₃ crystals are gaining tremendous interests, thanks to their exotic magnetic, multiferroic and magneto-optical characteristics. This family displays distinctive advantages of ultrafast response in nanoseconds and much enhanced sensitivity for magneto-optical (MO) switches and isolators. Moreover, enriched magnetic transitions and ultrafast opto-magnetic modulation have been rationally achieved, favoring ultrafast magnetic recording with much lower energy consumption. This work comprehensively summarizes the recent advances of magneto-optical RFeO₃ single crystals, including the crystal growth, the regulation of magnetic properties and the tailoring of opto-magnetic interactions. The related mechanism for the modulation of magneto-optical interactions is also analyzed in details, facilitating deeper insight into the design and further exploration of RFeO₃ crystals for the potential applications in the fields of novel spintronic and ultrafast magneto-optical devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127939"},"PeriodicalIF":1.7,"publicationDate":"2024-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel feathery nanoporous magnesium synthesized by ethanol vapor assisted physical vapor deposition","authors":"Han Wang ,&nbsp;Xiping Song ,&nbsp;Jingru Liu ,&nbsp;Li You","doi":"10.1016/j.jcrysgro.2024.127944","DOIUrl":"10.1016/j.jcrysgro.2024.127944","url":null,"abstract":"<div><div>Nanoporous magnesium exhibits outstanding performance in hydrogen absorption and desorption, rendering it a promising candidate for hydrogen storage applications. Nevertheless, there is limited discussion on the preparation method and growth mechanism of nano-porous magnesium. In this paper, a novel nanoporous magnesium material characterized by a feathery morphology was successfully synthesized at 823 K for 2 h under a vacuum pressure of 3 Pa, assisted by ethanol vapor through the physical vapor deposition method. The ethanol vapor was identified as the crucial factor in the synthesis of the feathery nanoporous magnesium. A vacancy-assisted formation mechanism is proposed to elucidate the creation of feathery nanoporous magnesium, whereby the ethanol vapor occupies specific positions within the magnesium vapor, resulting in the formation of nano and submicron pores.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127944"},"PeriodicalIF":1.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen evolution reaction of tellurium-incorporated nickel-iron layered double hydroxide microcrystals","authors":"Kyoungwon Cho ,&nbsp;Hyun Cho ,&nbsp;Jeong Ho Ryu","doi":"10.1016/j.jcrysgro.2024.127918","DOIUrl":"10.1016/j.jcrysgro.2024.127918","url":null,"abstract":"<div><div>Transition-metal-based layered double hydroxide (LDH) crystals have generated substantial interest as highly efficient oxygen evolution reaction (OER) catalysts because of their abundance, low cost, environmental friendliness, and favourable adsorption/desorption energies for intermittent reactants. However, the application of LDH crystals as high-performance electrocatalysts is frequently hindered by their sluggish electronic transport kinetics resulting from their intrinsically low conductivity. Herein, we report the effects of incorporating metalloids into transition metal LDH crystals on their electrocatalytic activity. In this study, tellurium (Te) incorporated NiFe (<em>x</em>Te-NiFe) LDH microcrystal, where <em>x</em>  = 0.2, 0.4, 0.6 and 0.8, were grown on three-dimensional porous nickel foam using a facile solvothermal method. The electrocatalytic OER properties were analyzed using linear sweep voltammetry and electrochemical impedance spectroscopy. The amount of Te was found to play a crucial role in improving the catalytic activity of NiFe LDH. The optimum amount of Te (<em>x</em>) introduced into NiFe LDH was examined with respect to the OER performance.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127918"},"PeriodicalIF":1.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142446627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Periodic dimple lines on the surface of the grain-boundary free (100) Si thin films grown by the continuous-wave laser crystallization","authors":"Satoshi Takayama ,&nbsp;Nobuo Sasaki ,&nbsp;Yukiharu Uraoka","doi":"10.1016/j.jcrysgro.2024.127934","DOIUrl":"10.1016/j.jcrysgro.2024.127934","url":null,"abstract":"<div><div>Periodic dimple lines have been found by the atomic-force-microscopy on the surface of the grain-boundary free (100) Si films obtained by the continuous-wave laser crystallization. The dimple lines are straight and run parallel each other to the scan direction regularly at a period of ∼3.1 μm. The depth of the dimple lines is 3∼5 nm (peak-to-valley). The internal angle of the dimple lines is ∼179.4°. These dimple lines originate from hyperfine sub-boundaries with a boundary energy of 2.4 × 10⁻⁶ J/cm², a rotation angle θ of ∼0.061°, and a dislocation spacing of ∼0.36 μm.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127934"},"PeriodicalIF":1.7,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of bottom supporting columns and cooling rate on the surface shape characteristics of sapphire substrates","authors":"Xiaobo Dai ,&nbsp;Hao Li ,&nbsp;Yang Zhang","doi":"10.1016/j.jcrysgro.2024.127933","DOIUrl":"10.1016/j.jcrysgro.2024.127933","url":null,"abstract":"<div><div>The manufacturing process of sapphire substrates involves several key steps, including epitaxy, annealing, cutting, and processing. Among these, epitaxy and annealing are particularly crucial. The temperature variances along both the longitudinal and transverse axes within the furnace during the crystallization process play a significant role in determining the crystallization rate and internal structure of sapphire crystals. Furthermore, annealing sapphire serves to alleviate internal stress, enhance crystal structure, optimize physical properties, improve optoelectronic characteristics, enhance surface quality, and increase overall yield. This step is paramount in enhancing the performance and application value of sapphire materials. In order to investigate and optimize the effects of different thermal conductivities of support columns at the base and various annealing procedures on the surface characteristics of sapphire substrates, thereby improving product quality, this study conducted research by utilizing support columns made of different materials and carefully controlling the cooling rate parameters for sapphire. The findings revealed that using graphite as the base support column for the crystal furnace can reduce both the longitudinal and transverse temperature gradients within the furnace, consequently promoting crystal growth and enhancing the quality of sapphire ingots. Additionally, sapphire chips annealed using the rapid one-step annealing program exhibited the highest average warpage and bending rate variation, reaching 2.0 μm, and the average dislocation density was half that of conventionally produced chips, at 108.89 pits/cm².</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127933"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction","authors":"B.D. Igamov ,&nbsp;A.I. Kamardin ,&nbsp;D.Kh. Nabiev ,&nbsp;I.R. Bekpulatov ,&nbsp;G.T. Imanova ,&nbsp;T.S. Kamilov ,&nbsp;A.S. Kasimov ,&nbsp;N.E. Norbutaev","doi":"10.1016/j.jcrysgro.2024.127932","DOIUrl":"10.1016/j.jcrysgro.2024.127932","url":null,"abstract":"<div><div>Mn₄Si₇ silicide crystals obtained by the diffusion method were studied using an X-ray diffractometer (XRD-6100) SHIMADZU. As a result of research, 14 peaks were identified in the Mn₄Si₇ crystal, corresponding to the database (COD-1530134).The size of Mn₄Si₇ silicide crystals (<em>D_Diff</em>) ranged from 6.2 × 10⁻¹⁰ m to 9.1 × 10⁻⁸ m, the lattice tension between crystal atoms (<em>ε_Diff</em>) from 0.31 to 3.71, the dislocation density on the surface (<em>δ_Diff</em>) varied in the range from 1 × 10¹¹ to 3.2 × 10¹⁴. It was found that the degree of crystallization of Mn₄Si₇ was 9.3 %, and the degree of amorphism reached 90.7 %. It has been established that the degree of crystallization of Mn₄Si₇ silicides is relatively low due to the fact that the Mn and Si atoms are non-stoichiometrically bonded to each other, and the degree of amorphism is high.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127932"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stress analysis and dislocation cluster generation in silicon crystal with artificial grain boundaries","authors":"Haruki Tajika ,&nbsp;Kentaro Kutsukake ,&nbsp;Noritaka Usami","doi":"10.1016/j.jcrysgro.2024.127922","DOIUrl":"10.1016/j.jcrysgro.2024.127922","url":null,"abstract":"<div><div>We conducted a dislocation and stress analysis on various grain boundaries (GBs) using silicon ingots that contained artificial GBs to permit systematic comparison of experimental and analytical results. Through photoluminescence imaging, we found that the number of dislocation clusters generated around the 〈1<!--> <!-->1<!--> <!-->0〉-oriented GBs was significantly higher than those around the 〈1<!--> <!-->0<!--> <!-->0〉-oriented GBs. The stress analysis revealed that this difference is linked to the maximum shear stress around the GB. However, there were some GBs where dislocation cluster generation was not observed despite the presence of high shear stress. For most of these GBs, the direction of the maximum shear stress in the 12 slip system of silicon crystal was found to be oblique downward to the growth direction, which appears to inhibit dislocation propagation.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127922"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142442189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth and characterizations of indium doped tin diselenide (InxSn1−x)Se2 crystals","authors":"P.D. Patel ,&nbsp;N.N. Prajapati ,&nbsp;H.M. Patel ,&nbsp;S.P. Sikligar ,&nbsp;P.B. Patel ,&nbsp;H.N. Desai ,&nbsp;J.M. Dhimmar ,&nbsp;B.P. Modi","doi":"10.1016/j.jcrysgro.2024.127913","DOIUrl":"10.1016/j.jcrysgro.2024.127913","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Nowadays, materials with narrow bandgap of transition metal dichalcogenide layered structures have attracted towards the research due to their substantial and tunable optoelectronic properties. Among the IV-VI compound semiconductor, (In&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Sn&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;)Se&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; is potential candidate with higher carrier mobility, sustainability and getting higher carrier concentration with doping. The (In&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Sn&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;)Se&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; crystal is layered type crystal grown by direct vapor transport mode within vacuum closed quartz ampoule. The chemical composition of (In&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Sn&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;)Se&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; grown crystals have been confirmed by Energy Dispersive X-ray analysis. Also it showed that as grown (In&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Sn&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;)Se&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; crystals to be near the stochiometric rich with Se. The structure analysis by X-ray diffraction of as grown (In&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;Sn&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mo&gt;−&lt;/mo&gt;&lt;mi&gt;x&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;)Se&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; crystal confirmed by hexagonal structure having lattice parameters: &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;a&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mi&gt;b&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;mo&gt;.&lt;/mo&gt;&lt;mn&gt;81&lt;/mn&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;mstyle&gt;&lt;mi&gt;Å&lt;/mi&gt;&lt;/mstyle&gt;&lt;mo&gt;,&lt;/mo&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; c = &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mn&gt;6&lt;/mn&gt;&lt;mo&gt;.&lt;/mo&gt;&lt;mn&gt;14&lt;/mn&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;mstyle&gt;&lt;mi&gt;Å&lt;/mi&gt;&lt;/mstyle&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;, and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;α&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mi&gt;β&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;9&lt;/mn&gt;&lt;msup&gt;&lt;mrow&gt;&lt;mn&gt;0&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;∘&lt;/mo&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;, &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;γ&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;12&lt;/mn&gt;&lt;msup&gt;&lt;mrow&gt;&lt;mn&gt;0&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;∘&lt;/mo&gt;&lt;/mrow&gt;&lt;/msup&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; for x = 0. Optical parameters of layered crystals were characterized with optical absorption spectra within the wavelength range of 400 nm to 1100 nm. The thermal analysis of crystals have been performed by recording thermo gravimetric curve. The kinetic parameters, thermal activation energies evaluated by Broido method, Coast-Redfern method, Horowitz-Metzger method. The variat","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"649 ","pages":"Article 127913"},"PeriodicalIF":1.7,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser-driven synthesis of functional materials for advanced energy applications: A short review","authors":"Eunseo Lee,&nbsp;Younghee So,&nbsp;Sungwook Mhin","doi":"10.1016/j.jcrysgro.2024.127925","DOIUrl":"10.1016/j.jcrysgro.2024.127925","url":null,"abstract":"<div><div>Since the initial exploration of synthesis possibilities at a liquid–solid interface through pulsed laser irradiation of iron in water, the pulsed laser ablation in liquid media (PLAL) process has garnered significant attention for constructing various nanostructures due to its simple, ultrafast, and clean methodology that avoids byproduct formation. Recent advances in functionalized heterostructures via the PLAL process suggest a broad range of applications for energy- conversion systems, including water splitting and energy harvesting. This review surveys recent advancements in PLAL for energy applications, with a specific focus on its applications in oxygen evolution reaction (OER) electrocatalysts and energy harvesting devices. The review discusses the synthesis mechanisms, advantages, challenges, and future research directions of PLAL, aiming to provide a comprehensive understanding of its potential and limitations.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127925"},"PeriodicalIF":1.7,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142419162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}