Journal of Crystal Growth最新文献_第10页

Deep learning with slow feature analysis for silicon single crystal growth state identification in Czochralski process 基于慢特征分析的深度学习在单晶生长状态识别中的应用

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-21 DOI: 10.1016/j.jcrysgro.2025.128346

Jun-Chao Ren, Ding Liu, Zi-Xing Huang, Yin Wan

The preparation of semiconductor silicon single crystal for advanced chip process requirements is the top priority of the current integrated circuit industry development. In this process, real-time and accurate identification of the growth state of Czochralski silicon single crystals (Cz-SSC) is the key to ensuring stable and improved crystal quality. Due to the switching of operating conditions, environmental disturbances and high dependence on operator experience, the process dynamics are highly complex, and minor anomalies are often masked by normal operating conditions, posing a serious challenge to real-time crystal growth state identification. To solve this problem, this study proposes a Cz-SSC growth state identification method that integrates slow feature analysis (SFA) and deep learning. Firstly, SFA extracts slow features reflecting the nature of process evolution at the time scale to reduce the masking effect of anomalies on minor anomalies from the source; subsequently, a multi-scale one-dimensional convolutional neural network (MS-1DCNN) is designed and a cross-attention mechanism is introduced for features extracted from convolutional kernels of various scales to achieve the weighted fusion of cross-scalar information, thus comprehensively capturing the discriminative patterns at different time scales. Finally, the experimental results demonstrate that the proposed method achieves superior performance in crystal growth state recognition, outperforming other approaches in terms of overall accuracy, recall, and F1-score. This Cz-SSC growth state identification method provides an effective solution for fine control of the semiconductor SSC manufacturing process.

制备符合先进芯片工艺要求的半导体硅单晶是当前集成电路产业发展的重中之重。在此过程中，实时准确地识别Cz-SSC的生长状态是保证晶体质量稳定和提高的关键。由于操作条件的切换、环境的干扰以及对操作人员经验的高度依赖，过程动态非常复杂，微小的异常往往被正常的操作条件所掩盖，对晶体生长状态的实时识别提出了严峻的挑战。为了解决这一问题，本研究提出了一种结合慢特征分析（slow feature analysis， SFA）和深度学习的Cz-SSC生长状态识别方法。首先，SFA在时间尺度上提取反映过程演化性质的慢特征，从源头上降低异常对小异常的掩蔽效应；随后，设计了一种多尺度一维卷积神经网络（MS-1DCNN），并对不同尺度卷积核提取的特征引入交叉注意机制，实现跨标量信息的加权融合，从而全面捕获不同时间尺度下的判别模式。最后，实验结果表明，该方法在晶体生长状态识别方面取得了优异的性能，在总体准确率、召回率和f1分数方面都优于其他方法。这种Cz-SSC生长状态识别方法为半导体SSC制造过程的精细控制提供了有效的解决方案。

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引用次数: 0

Optimization of process parameters to control diameter fluctuation during the monocrystalline silicon growth by hybrid neural network model and genetic algorithm 利用混合神经网络模型和遗传算法优化单晶硅生长过程中控制直径波动的工艺参数

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-20 DOI: 10.1016/j.jcrysgro.2025.128345

Jun Xiao , Qitao Zhang , Tai Li , Peilin He , Yuwei Wang , Kaifeng Liao , Guoqiang Lv , Xingwei Yang , Wenhui Ma

This study aims to construct a neural network-genetic algorithm collaborative optimization framework through a data-driven approach to break the challenge of diameter fluctuation control under multi-parameter coupling. Based on real-time data from the isothermal stage of industrial single crystal furnaces, the Grey Wolf Optimization algorithm is used to dynamically optimize the weights and hyperparameters of the Multi-Layer Perceptron. Consequently, a high-precision surrogate model of the relationship between process parameters (heater power, crystal pulling speed, crucible lift speed) and diameter fluctuation is established. Meanwhile, the thermal field stability is optimized by the Genetic Algorithm (i.e., a global search of the optimal parameter combination). Verified by factory measurements, the model prediction error is less than 5 %, and the optimal solutions for heater power, crystal pulling and crucible lift speed are 53.64 kW, 1.308 mm/min, and 0.163 mm/min, respectively. Actual production shows that the average diameter fluctuation of the crystal rods in the optimization group decreased from 1.48 ± 0.23 mm (original process) to 0.60 ± 0.15 mm (mean ± standard deviation), a reduction of 59.4 %. The coupled method significantly enhances the intelligence level of the single crystal silicon growth process, and provides a generalizable optimization paradigm for the preparation of other semiconductor crystals.

本研究旨在通过数据驱动的方法构建神经网络遗传算法协同优化框架，突破多参数耦合下直径波动控制的挑战。基于工业单晶炉等温阶段的实时数据，采用灰狼优化算法对多层感知器的权值和超参数进行动态优化。由此建立了工艺参数（加热器功率、拔晶速度、坩埚升速）与直径波动关系的高精度代理模型。同时，采用遗传算法（即全局搜索最优参数组合）对热场稳定性进行优化。经工厂实测验证，模型预测误差小于5%，加热器功率、拔晶速度和坩埚提升速度的最优解分别为53.64 kW、1.308 mm/min和0.163 mm/min。实际生产表明，优化组结晶棒的平均直径波动由原工艺的1.48±0.23 mm减小到0.60±0.15 mm（平均值±标准差），降幅达59.4%。该耦合方法显著提高了单晶硅生长过程的智能化水平，并为其他半导体晶体的制备提供了可推广的优化范例。

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引用次数: 0

Structural, resistivity and magnetic properties of millimeter-sized HfAl3 single crystals grown from Al flux Al助焊剂生长的毫米级HfAl3单晶的结构、电阻率和磁性能

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-19 DOI: 10.1016/j.jcrysgro.2025.128344

Kexin Bi , Wansong He , Lewei Chen , Yunqing Shi , Junkun Yi , Jihai Yuan , Qingsong Liu , Haoyu He , Yadong Gu , Shaoliang Wang , Xiao Ren , Mingwei Ma , Genfu Chen , Zhian Ren

HfAl₃ single crystals were successfully grown from Al flux for the first time. The largest as-grown plate-like crystals reached dimensions of 4 × 2 × 0.05 mm³. Comprehensive characterization including scanning electron microscopy, energy-dispersive spectroscopy, inductively coupled plasma atomic emission spectroscopy, and x-ray diffraction confirmed homogeneous chemical composition and phase purity. Magnetic measurements revealed weak diamagnetic behavior between 2 − 300 K, while electrical resistivity exhibited typical metallic conduction with a linear temperature dependence above 80 K. This work establishes a foundation for further investigation of the anisotropic physical properties of HfAl₃.

首次在Al助熔剂中成功生长出HfAl3单晶。最大的片状晶体尺寸达到4 × 2 × 0.05 mm3。通过扫描电子显微镜、能量色散光谱、电感耦合等离子体原子发射光谱和x射线衍射等综合表征，确定了均匀的化学成分和相纯度。在2 ~ 300 K之间，磁性测量显示出弱的抗磁性行为，而在80 K以上，电阻率表现出典型的金属传导，与温度呈线性关系。该工作为进一步研究HfAl3的各向异性物理性质奠定了基础。

引用次数: 0

Thermal stabilization of porous silicon: A key step for high-quality SiGe epitaxy 多孔硅的热稳定：高质量SiGe外延的关键步骤

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-12 DOI: 10.1016/j.jcrysgro.2025.128342

Mohammed Ibrahim , Mansour Aouassa , Saud A. Algarni , A.K. Aladim , Maha A. Alenizi , K.M.A. Saron , Mohammed Bouabdellaoui , Isabelle Berbezier

This study focuses on the epitaxial growth of virtual silicon–germanium (SiGe) substrates on porous silicon (PSi). Epitaxy was performed on different types of PSi substrates, with or without prior thermal annealing. Morphological and structural investigations by atomic force microscopy (AFM), transmission electron microscopy (TEM) and X-ray diffraction (XRD) show that epitaxial SiGe films grown on double-layer PSi substrates, annealed at 1100 °C, exhibit significantly higher crystalline quality than those grown on unannealed PSi substrates or PSi substrates annealed at temperatures lower than or equal to 900 °C. This improvement is attributed to the beneficial effects of 1100 °C annealing, which leads to stress relaxation, internal microstructure stabilization and significant improvement of PSi surface morphology. In contrast, direct growth of SiGe on unannealed PSi, even at moderate temperature (∼400 °C), induces structural degradation of the porous buffer, leading to a very high dislocation density in the epitaxially grown SiGe films. A well-optimized thermal treatment of PSi substrates promotes the growth of high-quality virtual SiGe substrates on PSi that is both efficient and economically viable for the development of SiGe-based photovoltaic cells and microelectronic devices.

本文研究了多孔硅（PSi）上虚拟硅锗（SiGe）衬底的外延生长。在不同类型的PSi衬底上进行外延，有或没有事先热退火。原子力显微镜（AFM）、透射电子显微镜（TEM）和x射线衍射（XRD）的形貌和结构研究表明，在1100℃退火的双层PSi衬底上生长的外延SiGe薄膜的晶体质量明显高于在未退火PSi衬底上生长的薄膜或在低于或等于900℃退火的PSi衬底上生长的薄膜。这种改善是由于1100℃退火的有利影响，导致应力松弛，内部微观结构稳定和PSi表面形貌的显着改善。相反，在未退火PSi上直接生长SiGe，即使在中等温度（~ 400°C）下，也会导致多孔缓冲层的结构降解，导致外延生长的SiGe薄膜中的位错密度非常高。对PSi衬底的热处理进行了优化，促进了在PSi上生长高质量的虚拟SiGe衬底，这对于基于SiGe的光伏电池和微电子器件的开发既有效又经济可行。

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引用次数: 0

Phase tunable synthesis of Cu2–xS nanocrystals and their cation substitution reactions Cu2-xS纳米晶的相位可调合成及其阳离子取代反应

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-10 DOI: 10.1016/j.jcrysgro.2025.128341

Jian Guo , Linchao Tan , Yedong Shi , Shaobo He , Xinxin Zhang , Lihui Chen

Cation substitution (CS) reactions utilization of Cu_2–_xS nanocrystals (NCs) have been emerged as a powerful postsynthetic method to produce complicated nanostructures and metastable phases. For these CS reactions, it is of great importance to tune the crystal phase of the Cu_2–_xS NCs since it strongly affects the reaction kinetics, thermodynamics, reaction intermediates, and final products. Herein, hexagonal phase djurleite Cu_1.94S NCs and cubic phase digenite Cu_1.8S NCs were synthesized by simple tuning of the amount of thiourea (TU). In particular, 0.5 mmol of TU is responsible for the formation of the djurleite Cu_1.94S NCs, while 5.0 mmol of TU is responsible for the formation of the digenite Cu_1.8S NCs. Afterward, the Cu_1.94S and digenite Cu_1.8S NCs were substituted by Zn²⁺ and Cd²⁺, and hexagonal phase wurtzite ZnS and CdS NCs, cubic phase zincblende ZnS and CdS NCs were produced. These ZnS and CdS NCs are otherwise difficult to access without the CS method. Therefore, our findings in the present study provide a straightforward phase tuning of the Cu_2–_xS NCs, and potential guidelines for creating more complicated metal sulfide nano(hetero)structures.

利用Cu2-xS纳米晶体（NCs）的阳离子取代（CS）反应已成为制备复杂纳米结构和亚稳相的一种强有力的合成方法。对于这些CS反应，调整Cu2-xS NCs的晶相非常重要，因为它对反应动力学、热力学、反应中间体和最终产物都有很大的影响。本文通过简单调整硫脲（TU）的用量，合成了六方相双闪闪岩Cu1.94S NCs和立方相辉长岩Cu1.8S NCs。其中，0.5 mmol的TU对闪闪岩Cu1.94S NCs的形成起作用，5.0 mmol的TU对辉长岩Cu1.8S NCs的形成起作用。然后用Zn2+和Cd2+取代cu1.94 4s和辉长岩Cu1.8S NCs，制得六方相武锌矿ZnS和CdS NCs，立方相锌闪锌矿ZnS和CdS NCs。如果没有CS方法，这些ZnS和CdS nc很难访问。因此，我们在本研究中的发现为Cu2-xS纳米结构提供了一种直接的相位调整方法，并为创建更复杂的金属硫化物纳米（异质）结构提供了潜在的指导。

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引用次数: 0

Crystallinity and defect reduction in Cs2AgBiBr6: Key factors for enhanced optoelectronic devices Cs2AgBiBr6的结晶度和缺陷减少：增强光电器件的关键因素

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-05 DOI: 10.1016/j.jcrysgro.2025.128331

Fahad K. Alshammari , Achref Jebnouni , Mohamed Bouzidi , Sana Ben Khalifa , Mohamed Ben Bechir

Cs₂AgBiBr₆ double perovskites have attracted considerable interest for optoelectronic applications owing to their favorable structural stability and nontoxic composition. In this study, we systematically investigate the influence of two crystal growth methods—Single Crystal Growth (SCG) and Seed-Assisted Growth (SAG)—on the morphology, crystallinity, defect landscape, and optoelectronic properties of Cs₂AgBiBr₆ single crystals. Comprehensive characterization using scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), time-resolved photoluminescence (TRPL), impedance spectroscopy, and current–voltage (I–V) measurements reveals that the SAG method yields significantly larger and more uniform grains, improved structural coherence, and reduced defect densities compared to the SCG route. The narrower XRD peaks and reduced lattice strain in SAG-grown crystals confirm their higher crystallinity, while TRPL analysis shows extended carrier lifetimes, indicating suppressed nonradiative recombination due to fewer trap states. These structural and optical improvements directly enhance device performance, as SAG-grown crystals exhibit a 2.5-fold increase in photocurrent and a markedly lower dark current in photodetector configurations. Our findings establish the SAG technique as a superior and scalable approach for producing high-quality Cs₂AgBiBr₆ crystals, positioning them as promising candidates for next-generation optoelectronic devices, including photodetectors and light-emitting components.

Cs2AgBiBr6双钙钛矿由于其良好的结构稳定性和无毒成分而引起了人们对光电应用的极大兴趣。在本研究中，我们系统地研究了单晶生长（SCG）和种子辅助生长（SAG）两种晶体生长方法对Cs2AgBiBr6单晶形貌、结晶度、缺陷形貌和光电性能的影响。通过扫描电子显微镜（SEM）、x射线衍射（XRD）、光致发光（PL）、时间分辨光致发光（TRPL）、阻抗谱和电流-电压（I-V）测量的综合表征表明，与SCG方法相比，SAG方法可以产生更大、更均匀的晶粒，提高结构相干性，降低缺陷密度。在sagg生长的晶体中，更窄的XRD峰和更小的晶格应变证实了它们更高的结晶度，而TRPL分析显示载流子寿命延长，表明由于较少的陷阱态而抑制了非辐射重组。这些结构和光学方面的改进直接提高了器件的性能，因为sagg生长的晶体在光电探测器配置中表现出2.5倍的光电流增加和显著降低的暗电流。我们的研究结果表明，SAG技术是生产高质量Cs2AgBiBr6晶体的一种优越且可扩展的方法，将其定位为下一代光电器件（包括光电探测器和发光元件）的有前途的候选者。

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引用次数: 0

Thermodynamical analysis of polytype stability during top-seeded solution growth of SiC using 2D nucleation theory 基于二维成核理论的SiC顶种溶液生长多型稳定性热力学分析

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-05 DOI: 10.1016/j.jcrysgro.2025.128332

Koichi Kakimoto , Satoshi Nakano

We investigated the dependence of SiC polytypes on process parameters, such as seed temperature and the nitrogen pressure in a furnace, during top-seeded solution growth. The analysis was based on classical thermodynamic nucleation theory in conjunction with numerical results obtained from a global model that includes convective, conductive, and radiative heat transfer. We investigated which SiC polytype (3C-SiC or 4H-SiC) was more stable in the nucleation stage by comparing the nucleation energies of the polytypes. The results showed that 3C-SiC formation was more stable than 4H-SiC formation under growth conditions with nitrogen doping. Furthermore, 3C-SiC was more stable than 4H-SiC at a high supersaturation of carbon in the solution.

我们研究了在顶种溶液生长过程中，SiC多型对工艺参数（如种子温度和炉内氮压力）的依赖性。该分析基于经典热力学成核理论，并结合从包括对流、传导和辐射传热的全局模型获得的数值结果。通过比较多型碳化硅的成核能，研究了哪种多型碳化硅（3C-SiC或4H-SiC）在成核阶段更稳定。结果表明，在氮掺杂的生长条件下，3C-SiC的形成比4H-SiC的形成更稳定。此外，当碳在溶液中高度过饱和时，3C-SiC比4H-SiC更稳定。

引用次数: 0

Influence of Indium and Arsenic composition on structural properties of InGaAsSb/AlGaAsSb multi-quantum wells grown by molecular beam epitaxy 铟和砷组成对分子束外延生长InGaAsSb/AlGaAsSb多量子阱结构特性的影响

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-03 DOI: 10.1016/j.jcrysgro.2025.128330

Ayşe Aygül Ergürhan , Burcu Arpapay , Sabahattin Erinç Erenoğlu , Mustafa Kulakcı , Behçet Özgür Alaydin , Didem Altun , Uğur Serincan

InGaAsSb/AlGaAsSb multiple quantum well (MQW) structures, with their narrow band gap quaternary compositions, are well suited for devices operating in the 2–3 µm mid-infrared spectral region. In this study, to investigate the effects of compositional variation on structural properties, twenty-period MQW structures were grown by molecular beam epitaxy on (100) GaSb substrates. It was demonstrated that varying the In and As concentrations while keeping the V/III beam equivalent pressure ratio constant significantly influenced the surface morphology due to defect formation. It was found that in the samples with In concentrations ranging from 30 to 44%, low As content resulted in an increase in the number of surface defects. However, a smooth, defect-free surface and improved crystal quality were achieved at 44% In content when the As concentration in the QWs was 14% or higher. These results highlight the importance of precise compositional tuning for achieving high structural quality in mid-infrared MQW devices.

InGaAsSb/AlGaAsSb多量子阱（MQW）结构具有窄带隙季元成分，非常适合在2-3µm中红外光谱区域工作的器件。在本研究中，为了研究成分变化对结构性能的影响，我们在（100）GaSb衬底上通过分子束外延生长了20周期的MQW结构。结果表明，在保持V/III光束等效压力比不变的情况下，改变In和As浓度会显著影响由于缺陷形成的表面形貌。结果表明，在in浓度为30 ~ 44%的样品中，低As含量导致表面缺陷数量增加。然而，当砷含量为44%时，当砷含量为14%或更高时，晶体表面光滑，无缺陷，晶体质量得到改善。这些结果强调了精确的成分调谐对于实现中红外MQW器件的高结构质量的重要性。

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引用次数: 0

Study on the effect of deuterium effect on the morphology of magnesium carbonate whiskers 氘效应对碳酸镁晶须形貌影响的研究

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-09-03 DOI: 10.1016/j.jcrysgro.2025.128329

Tianbo Fan , Liqiang Jiao , Qiutong Li , Hongyu Zhao , Yihui Qu , Hongfan Guo , Xue Li , Li Li , Cong Li , Shijie Wang

It is proposed that perturbations of several tens of ppm in the deuterium content of normal water may exert measurable influences on certain physical or chemical properties during aqueous-phase processes, a phenomenon termed the “deuterium effect”. Magnesium carbonate trihydrate whiskers (MgCO₃·3H₂O) were synthesized by the co-precipitation method using magnesium chloride and sodium carbonate solutions prepared with water containing 40–165 ppm deuterium at 30–70 °C, and the influence of the deuterium effect on product morphology was investigated. The products were characterized using XRD and SEM. The solubility during the reaction process was determined by titration. The results indicate that changes in deuterium content lead to significant variations in crystal morphology, transforming from predominantly hexagonal prisms to mainly tetragonal prisms with inclusions of irregular hexagonal prism structures. At the same temperature, the solubility of magnesium chloride and calcium carbonate in water with different deuterium contents varies by up to 22.24 % and 17.91 %, respectively, demonstrating the significant impact of the deuterium effect on water activity and crystallization products. Theoretical calculations using the Morphology and CASTEP modules revealed that a reduction in deuterium content causes the dominant exposed facet of MgCO₃·3H₂O to gradually change from the (212) plane to the (301) plane, leading to a transformation of the crystals from hexagonal to tetragonal prisms. The p orbital governs the stability of surface structures, and variations in deuterium content activate the density of states of the (212) plane, resulting in morphological changes. The theoretical results are consistent with the experimental observations.

有人提出，正常水中氘含量的几十ppm的扰动可能对水相过程中的某些物理或化学性质产生可测量的影响，这种现象称为“氘效应”。以含40-165 ppm氘的氯化镁和碳酸钠溶液为原料，在30-70℃条件下，采用共沉淀法合成了碳酸镁三水晶须（MgCO3·3H2O），并考察了氘效应对产物形貌的影响。用XRD和SEM对产物进行了表征。用滴定法测定了反应过程中的溶解度。结果表明，氘含量的变化导致晶体形态发生了显著的变化，从以六棱柱为主转变为以四方棱柱为主，夹杂着不规则的六棱柱结构。在相同温度下，氯化镁和碳酸钙在不同氘含量水中的溶解度差异分别高达22.24%和17.91%，说明氘效应对水活度和结晶产物有显著影响。利用形态学和CASTEP模块进行的理论计算表明，氘含量的降低导致MgCO3·3H2O的主要暴露面逐渐从（212）面转变为（301）面，导致晶体从六边形转变为四边形。p轨道控制表面结构的稳定性，氘含量的变化激活（212）平面的态密度，导致形态变化。理论结果与实验结果一致。

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引用次数: 0

Effect of pulse time control on the structural growth characteristics and optical properties of Ga2O3 thin films prepared by thermal atomic layer deposition (T-ALD) 脉冲时间控制对热原子层沉积（T-ALD）制备Ga2O3薄膜结构生长特性和光学性能的影响

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth

Pub Date : 2025-08-31 DOI: 10.1016/j.jcrysgro.2025.128321

Ziyu Yang , Jianghai He , Chufeng Hou , Zihua Ma , Shihao Xia , Qi Liu , Qiang Wang , Yuefei Zhang , Fei Chen

The synthesis of gallium oxide (Ga₂O₃) thin films has predominantly utilized ozone (O₃) or O₂ plasma as oxygen sources. However, the impact of H₂O as an oxygen precursor on the properties of Ga₂O₃ films has not been extensively explored. In this study, we employ thermal atomic layer deposition (T-ALD) with trimethylgallium (TMG) and water (H₂O) as precursors to systematically investigate the growth characteristics of Ga₂O₃ films on sapphire substrates at a constant temperature of 450 °C. The H₂O pulse duration is varied between 0.1 and 0.5 s. Our results reveal that the Ga₂O₃ films exhibit the α-phase when the H₂O pulse duration ranges from 0.1 to 0.3 s. As the H₂O pulse duration increases, the films undergo a transition to an amorphous structure, accompanied by the formation of significant oxygen vacancies. The maximum film roughness of 0.531 nm is observed at a pulse duration of 0.2 s, while the highest bandgap of 5.53 eV is achieved at a pulse duration of 0.3 s. Under ultraviolet illumination with a power intensity of 224 μW/cm², the solar-blind ultraviolet detector demonstrates a photocurrent of 4.7 × 10⁻⁷ A, a dark current of 4.2 × 10⁻⁹ A, and a maximum on/off ratio of 112, with a responsivity of 0.6 mA/W. The device exhibits a response time (τ_r) of 0.08 s and a decay time (τd) of 5.20 s at a bias voltage of 5 V, along with persistent photoconductivity (PPC).

氧化镓（Ga2O3）薄膜的合成主要利用臭氧（O3）或氧等离子体作为氧源。然而，H2O作为氧前驱体对Ga2O3薄膜性能的影响尚未得到广泛的研究。在这项研究中，我们采用以三甲基镓（TMG）和水（H2O）为前驱体的热原子层沉积（T-ALD）技术，系统地研究了450℃恒温下蓝宝石衬底上Ga2O3薄膜的生长特性。水脉冲持续时间在0.1到0.5秒之间变化。结果表明，当脉冲时间为0.1 ~ 0.3 s时，Ga2O3薄膜呈现α-相；随着水脉冲持续时间的增加，膜经历过渡到无定形结构，并伴随着明显的氧空位的形成。当脉冲持续时间为0.2 s时，膜的粗糙度达到0.531 nm，而当脉冲持续时间为0.3 s时，膜的带隙达到5.53 eV。在功率强度为224 μW/cm2的紫外光照射下，该探测器光电流为4.7 × 10−7 a，暗电流为4.2 × 10−9 a，最大通断比为112，响应度为0.6 mA/W。该器件在5 V偏置电压下的响应时间（τr）为0.08 s，衰减时间（τd）为5.20 s，并具有持久的光导电性（PPC）。

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引用次数: 0