2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528569
A. Endoh, I. Watanabe, A. Kasamatsu, Tsuyoshi Takahashi, S. Shiba, Y. Nakasha, T. Iwai, T. Mimura
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain-side recess lengths Lrd's at 300 and 16 K. The kink phenomenon was seen in the current-voltage (I-V) characteristics for all the measured HEMTs at 16 K. The peak cutoff frequency fT decreases with increasing Lrd both at 300 and 16 K. On the other hand, the maximum oscillation frequency fmax shows very complicated behavior both at 300 and 16 K. We found that there exists the most suitable Lrd value to increase fmax at each temperature and/or drain-source voltage Vds.
{"title":"Cryogenic DC and RF characteristics of InP HEMTs with various drain-side recess lengths","authors":"A. Endoh, I. Watanabe, A. Kasamatsu, Tsuyoshi Takahashi, S. Shiba, Y. Nakasha, T. Iwai, T. Mimura","doi":"10.1109/ICIPRM.2016.7528569","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528569","url":null,"abstract":"We measured the DC and RF characteristics of InP-based 75-nm-gate In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.63</sub>Ga<sub>0.37</sub>As HEMTs with various drain-side recess lengths L<sub>rd</sub>'s at 300 and 16 K. The kink phenomenon was seen in the current-voltage (I-V) characteristics for all the measured HEMTs at 16 K. The peak cutoff frequency f<sub>T</sub> decreases with increasing L<sub>rd</sub> both at 300 and 16 K. On the other hand, the maximum oscillation frequency f<sub>max</sub> shows very complicated behavior both at 300 and 16 K. We found that there exists the most suitable L<sub>rd</sub> value to increase f<sub>max</sub> at each temperature and/or drain-source voltage V<sub>ds</sub>.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121998779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528650
M. Akabori
Summary form only given. Electron mobility anisotropy in pseudomorphic In0.75Ga0.25As/InP two-dimensional electron gas has been investigated using gated Hall-bar devices with different current-flowing directions. Clear anisotropy can be seen at both liquid He (LHe) and liquid N2 (LN2) temperatures. By using Matthiesen-type equations, isotropic and anisotropic electron mobilities and their at LHe and LN2 temperatures, which almost monotonically increases with increasing sheet electron density. The present trends can be fitted to assumption of the random piezoelectric scattering. We also have calculated the anisotropy parameter dependence on sheet electron density have been extracted. We have found that similar trends of anisotropic electron mobility which is the ratio of isotropic and anisotropic electron mobilities. We have found that the anisotropy parameter decreases gradually with increasing sheet electron density at LN2 temperature, and it shows a significant peak at LHe temperature.
{"title":"Sheet electron density dependence of electron mobility anisotropy in In0.75Ga0.25As/InP two-dimensional electron gas","authors":"M. Akabori","doi":"10.1109/ICIPRM.2016.7528650","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528650","url":null,"abstract":"Summary form only given. Electron mobility anisotropy in pseudomorphic In0.75Ga0.25As/InP two-dimensional electron gas has been investigated using gated Hall-bar devices with different current-flowing directions. Clear anisotropy can be seen at both liquid He (LHe) and liquid N2 (LN2) temperatures. By using Matthiesen-type equations, isotropic and anisotropic electron mobilities and their at LHe and LN2 temperatures, which almost monotonically increases with increasing sheet electron density. The present trends can be fitted to assumption of the random piezoelectric scattering. We also have calculated the anisotropy parameter dependence on sheet electron density have been extracted. We have found that similar trends of anisotropic electron mobility which is the ratio of isotropic and anisotropic electron mobilities. We have found that the anisotropy parameter decreases gradually with increasing sheet electron density at LN2 temperature, and it shows a significant peak at LHe temperature.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117106264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528683
I. Khmyrova, Yu. Kholopova, S. Larkin, V. Zemlyakov, B. Shevchenko, A. Tsatsul'nikov, S. Shapoval
Blue-green InGaN/GaN light-emitting diodes (LEDs) with spatially nonuniform current injection were fabricated and tested. Broad electroluminescence (EL) spectra with equal peak intensities of blue and green emission lines and shallow trough between them were observed at elevated injected current. These features of EL-spectrum are believed to be caused by the mesh-like patterning of the electrode as it creates spatially nonuniform electric potential which provides spatial modulation of the injected current along the QW-planes. The latter results not only in spatial nonuniformity of intensity of generated light along the QW-planes but due to screening of polarization field in the QWs causes also position-dependent blue shift of EL. The observed phenomenon can be used to control the EL spectra of dual-wavelength LEDs by the patterned electrodes.
{"title":"Effect of nonuniform current injection on electroluminescence spectra of InGaN-GaN blue-green light-emitting diode","authors":"I. Khmyrova, Yu. Kholopova, S. Larkin, V. Zemlyakov, B. Shevchenko, A. Tsatsul'nikov, S. Shapoval","doi":"10.1109/ICIPRM.2016.7528683","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528683","url":null,"abstract":"Blue-green InGaN/GaN light-emitting diodes (LEDs) with spatially nonuniform current injection were fabricated and tested. Broad electroluminescence (EL) spectra with equal peak intensities of blue and green emission lines and shallow trough between them were observed at elevated injected current. These features of EL-spectrum are believed to be caused by the mesh-like patterning of the electrode as it creates spatially nonuniform electric potential which provides spatial modulation of the injected current along the QW-planes. The latter results not only in spatial nonuniformity of intensity of generated light along the QW-planes but due to screening of polarization field in the QWs causes also position-dependent blue shift of EL. The observed phenomenon can be used to control the EL spectra of dual-wavelength LEDs by the patterned electrodes.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129815407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528729
Yuefei Cai, Xinbo Zou, Yuan Gao, Lisong Li, P. Mok, K. Lau
GaN high voltage LED (HVLED) chips designed and fabricated for low-flicker converter-free LED drivers are reported. The HVLED chips show uniform electrical performance (forward voltage at 20 mA varies from 8.5 V to 8.7 V for 3-cell chips, 16.7 V to 17.4 V for 6-cell chips) and good linearity of output /input power up to 100W/cm2 input. Both features satisfy the demanding requirements of the novel quasi-constant power control scheme adopted in the converter-free LED driver circuit. After bonding a total of 60 LED cells (eight 6-cell chips and four 3-cell chips) and a converter-free LED driver on a silicon carrier, a compact and low-flicker lighting system integration is demonstrated.
{"title":"Efficient use of uniform GaN HVLEDs for small-flicker general illumination applications with converter-free LED drivers","authors":"Yuefei Cai, Xinbo Zou, Yuan Gao, Lisong Li, P. Mok, K. Lau","doi":"10.1109/ICIPRM.2016.7528729","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528729","url":null,"abstract":"GaN high voltage LED (HVLED) chips designed and fabricated for low-flicker converter-free LED drivers are reported. The HVLED chips show uniform electrical performance (forward voltage at 20 mA varies from 8.5 V to 8.7 V for 3-cell chips, 16.7 V to 17.4 V for 6-cell chips) and good linearity of output /input power up to 100W/cm2 input. Both features satisfy the demanding requirements of the novel quasi-constant power control scheme adopted in the converter-free LED driver circuit. After bonding a total of 60 LED cells (eight 6-cell chips and four 3-cell chips) and a converter-free LED driver on a silicon carrier, a compact and low-flicker lighting system integration is demonstrated.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128332694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528616
Yong-Pyo Kim, Jiheon Ryu, Sunghyun Baek, Sung-Min Hong, Sungbae Lee, Jae‐Hyung Jang
A photoconductive semiconductor switch (PCSS) with a gap of 2 mm was fabricated on a semi-insulating GaAs substrate. The PCSS was excited by a 1064 nm wavelength pulse laser which has 700 ps pulse width (FWHM) and energy of 135 μJ. Output pulses of the PCSS were recorded at bias voltages from 100 V to 1.4 kV in fluorinert ambience which has high dielectric strength (Eb > 160 kV/cm). At bias voltages below 1 kV, the PCSS exhibited the linear operational mode, where the output pulse amplitude linearly increases with the increased bias voltage. When the bias voltage gets higher than 1 kV, the output pulse amplitude begin to increase more rapidly due to nonlinear optical process. The pulse width and fall time of the output pulses increased correspondingly.
{"title":"Output characteristics of GaAs photoconductive semiconductor switch at high bias voltages","authors":"Yong-Pyo Kim, Jiheon Ryu, Sunghyun Baek, Sung-Min Hong, Sungbae Lee, Jae‐Hyung Jang","doi":"10.1109/ICIPRM.2016.7528616","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528616","url":null,"abstract":"A photoconductive semiconductor switch (PCSS) with a gap of 2 mm was fabricated on a semi-insulating GaAs substrate. The PCSS was excited by a 1064 nm wavelength pulse laser which has 700 ps pulse width (FWHM) and energy of 135 μJ. Output pulses of the PCSS were recorded at bias voltages from 100 V to 1.4 kV in fluorinert ambience which has high dielectric strength (Eb > 160 kV/cm). At bias voltages below 1 kV, the PCSS exhibited the linear operational mode, where the output pulse amplitude linearly increases with the increased bias voltage. When the bias voltage gets higher than 1 kV, the output pulse amplitude begin to increase more rapidly due to nonlinear optical process. The pulse width and fall time of the output pulses increased correspondingly.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128366502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528739
T. Omata, Y. Mizuno, Issei Suzuki, Hiraku Nagatani, M. Kita
β-NaFeO2 structure is an orthorhombic and ternary wurtzite-derived structure. Recently, we found a new oxide semiconductor possessing this structure, β-CuGaO2, of which energy band gap is 1.47 eV, and it exhibits p-type electrical conduction. In this presentation, we introduce optical and electrical properties of β-CuGaO2 and band gap engineering of this material by alloying with β-CuAlO2 and β-LiGaO2. Wurtzite-type β-NaFeO2-type phases were obtained in 0<;under><;<;/under>x<;under><;<;/under>0.7 and the band gap was widened up to 2.1 eV in Cu(Ga1-xAlx)O2 system. In (Cu1-xLix)GaO2 system, wurtzite-type phases were obtained in 0<;under><;<;/under>x<;under><;<;/under>1, and the band gap was adjustable between 1.47 and 5.6 eV. These new quaternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.
{"title":"Ternary and quaternary wurtzite-type oxide semiconductors: β-CuGaO2 and its related materials","authors":"T. Omata, Y. Mizuno, Issei Suzuki, Hiraku Nagatani, M. Kita","doi":"10.1109/ICIPRM.2016.7528739","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528739","url":null,"abstract":"β-NaFeO<sub>2</sub> structure is an orthorhombic and ternary wurtzite-derived structure. Recently, we found a new oxide semiconductor possessing this structure, β-CuGaO<sub>2</sub>, of which energy band gap is 1.47 eV, and it exhibits p-type electrical conduction. In this presentation, we introduce optical and electrical properties of β-CuGaO<sub>2</sub> and band gap engineering of this material by alloying with β-CuAlO<sub>2</sub> and β-LiGaO<sub>2</sub>. Wurtzite-type β-NaFeO<sub>2</sub>-type phases were obtained in 0<;under><;<;/under>x<;under><;<;/under>0.7 and the band gap was widened up to 2.1 eV in Cu(Ga<sub>1-x</sub>Al<sub>x</sub>)O<sub>2</sub> system. In (Cu<sub>1-x</sub>Li<sub>x</sub>)GaO<sub>2</sub> system, wurtzite-type phases were obtained in 0<;under><;<;/under>x<;under><;<;/under>1, and the band gap was adjustable between 1.47 and 5.6 eV. These new quaternary oxide semiconductors possessing wurtzite-derived structure expanded the energy region that the oxide semiconductors cover into visible and near-infrared region.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128562185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528580
Q. Meng, Hong Wang, Chongyang Liu, Xin Guo, K. Ang
Summary form only given. In this paper, we report high-performance InP-based UTC-PDs with dipole-doped structure at 1.55 μm wavelength. It is experimentally demonstrated that UTC-PD can achieve both a high photocurrent and a fast photoresponse with high 3-dB bandwidth over 40 GHz by inserting a dipole-doped structure at the InGaAs/InP absorption/collection interface to suppress the current blocking. In addition, in order to predict the 3-dB bandwidth of high-photocurrent and high-speed UTC-PD with dipole-doped structure and to extract model parameters accurately and conveniently, an equivalent circuit and a semi-analytical parameter extraction method are employed in this work. An 18-μm-diameter UTC-PD has yielded a maximum 3-dB bandwidth result over 135 GHz.
{"title":"InP-based uni-traveling-carrier photodiodes (UTC-PDs) with 3-dB bandwidth over 135 GHz","authors":"Q. Meng, Hong Wang, Chongyang Liu, Xin Guo, K. Ang","doi":"10.1109/ICIPRM.2016.7528580","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528580","url":null,"abstract":"Summary form only given. In this paper, we report high-performance InP-based UTC-PDs with dipole-doped structure at 1.55 μm wavelength. It is experimentally demonstrated that UTC-PD can achieve both a high photocurrent and a fast photoresponse with high 3-dB bandwidth over 40 GHz by inserting a dipole-doped structure at the InGaAs/InP absorption/collection interface to suppress the current blocking. In addition, in order to predict the 3-dB bandwidth of high-photocurrent and high-speed UTC-PD with dipole-doped structure and to extract model parameters accurately and conveniently, an equivalent circuit and a semi-analytical parameter extraction method are employed in this work. An 18-μm-diameter UTC-PD has yielded a maximum 3-dB bandwidth result over 135 GHz.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129000596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528699
Y. Taniguchi, T. Miki, Takanori Mitsuno, Y. Ohno, M. Nagase, K. Minagawa, M. Yasuzawa
Hydrophilic graphene film by molecular functionalization was investigated. In order to realize the hydrophilic graphene film without introducing defects, the pyrene derivative with a phosphorylcholine group was synthesized. Functionalization time dependences on contact angle and 4-terminal resistivity were measured using SiC epitaxial graphene. Contact angle was almost constant (76°) at first, and then, suddenly decreased (59°) at 3 min. On the other hand, resistivity was gradually increased (0.6 to 2.4 μΩm), and saturated after 5 min, indicates that this functionalization process does not break the graphene structure. These results indicate that hydrophilic graphene film was successfully fabricated by molecular functionalization.
{"title":"Hydrophilic graphene film by molecular functionalization","authors":"Y. Taniguchi, T. Miki, Takanori Mitsuno, Y. Ohno, M. Nagase, K. Minagawa, M. Yasuzawa","doi":"10.1109/ICIPRM.2016.7528699","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528699","url":null,"abstract":"Hydrophilic graphene film by molecular functionalization was investigated. In order to realize the hydrophilic graphene film without introducing defects, the pyrene derivative with a phosphorylcholine group was synthesized. Functionalization time dependences on contact angle and 4-terminal resistivity were measured using SiC epitaxial graphene. Contact angle was almost constant (76°) at first, and then, suddenly decreased (59°) at 3 min. On the other hand, resistivity was gradually increased (0.6 to 2.4 μΩm), and saturated after 5 min, indicates that this functionalization process does not break the graphene structure. These results indicate that hydrophilic graphene film was successfully fabricated by molecular functionalization.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124613884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528768
Jin Wei, Sheng-gen Liu, Baikui Li, Xi Tang, Gaofei Tang, Zhaofu Zhang, K. J. Chen
Summary form only given. A normally-off gate-recessed double-channel MOS-HEMT (DC-MOS-HEMT) has been recently demonstrated with the advantages of (1) low on-resistance and (2) low sensitivity of threshold voltage on recess depth. A critical design parameter for achieving a low overall ON-resistance is identified to be the separation of the two heterojunction channels that determines the strength of electrical coupling between the two channels. When the coupling is weak as a result of a larger separation, the upper channel in the access region is electrically isolated from the gate-controlled lower channel and cannot contribute to lowering the access resistance. When the coupling is strong as a result of a smaller separation, the upper and lower channels are electrically “merged” so that both the upper and lower heterojunction channels in the access region are effectively connected to the lower heterojunction channel controlled by the gate, enabling a low ON-resistance.
{"title":"Critical heterostructure design for low on-resistance normally-off double-channel MOS-HEMT","authors":"Jin Wei, Sheng-gen Liu, Baikui Li, Xi Tang, Gaofei Tang, Zhaofu Zhang, K. J. Chen","doi":"10.1109/ICIPRM.2016.7528768","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528768","url":null,"abstract":"Summary form only given. A normally-off gate-recessed double-channel MOS-HEMT (DC-MOS-HEMT) has been recently demonstrated with the advantages of (1) low on-resistance and (2) low sensitivity of threshold voltage on recess depth. A critical design parameter for achieving a low overall ON-resistance is identified to be the separation of the two heterojunction channels that determines the strength of electrical coupling between the two channels. When the coupling is weak as a result of a larger separation, the upper channel in the access region is electrically isolated from the gate-controlled lower channel and cannot contribute to lowering the access resistance. When the coupling is strong as a result of a smaller separation, the upper and lower channels are electrically “merged” so that both the upper and lower heterojunction channels in the access region are effectively connected to the lower heterojunction channel controlled by the gate, enabling a low ON-resistance.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130105091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528755
S. Mieda, N. Yokota, W. Kobayashi, H. Yasaka
We propose a hybrid modulation scheme which has a wider 3-dB bandwidth and higher dispersion tolerance compared with a direct current modulation (DM) scheme. Frequency responses and eye diagrams are calculated by using rate equations. The calculated frequency response shows that the hybrid modulation scheme improves modulation sensitivity degradation at a high-frequency region and enhances 3-dB bandwidth of a semiconductor laser. Comparison of the eye diagrams between DM and hybrid modulation schemes shows that the hybrid modulation scheme has a good dispersion tolerance compared with the DM scheme thanks to its negative chirp property.
{"title":"Transmission performance improvement of semiconductor lasers by hybrid modulation scheme","authors":"S. Mieda, N. Yokota, W. Kobayashi, H. Yasaka","doi":"10.1109/ICIPRM.2016.7528755","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528755","url":null,"abstract":"We propose a hybrid modulation scheme which has a wider 3-dB bandwidth and higher dispersion tolerance compared with a direct current modulation (DM) scheme. Frequency responses and eye diagrams are calculated by using rate equations. The calculated frequency response shows that the hybrid modulation scheme improves modulation sensitivity degradation at a high-frequency region and enhances 3-dB bandwidth of a semiconductor laser. Comparison of the eye diagrams between DM and hybrid modulation schemes shows that the hybrid modulation scheme has a good dispersion tolerance compared with the DM scheme thanks to its negative chirp property.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121483329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
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