2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献
Pub Date : 2016-08-04DOI: 10.1109/ICIPRM.2016.7528791
J. Girard, Konstantinos Papatryfonos, G. Rodary, C. David, F. Lelarge, A. Ramdane
Quantum Dashes (QDashes), some elongated and self-assembled semiconductor nanostructures are interesting candidates as building blocks for new laser devices with promising performances. To date, there was a lack of knowledge about the dimensionality of the confinement for carriers in such QDashes. We report on cross-sectional scanning tunneling microscopy and spectroscopy (X-STM/STS) performed on InAs(P)/InGaAsP/InP(001) QDashes, embedded in an optimized laser structure configuration. The active region consists of nine InAs(P) QDashes layers separated by InGaAsP barriers, sandwiched between a p-type and an n-type InP semiconductor. The STS measurements measured throughout the active region reveal a shift of the conduction band edges in agreement with built-in potential of the p-i-n junction. Furthermore we investigate the question of the dimensionality of the InAs(P) Q-Dashes. Local density of states measured on QDashes from layer to layer indicates a 1-D quantum-wire-like nature for these nanostructures whose squared wavefunctions were subsequently imaged by differential conductivity mapping.
{"title":"1-D electronic density of states for InAs/InP Quantum Dashes probed by scanning tunneling spectroscopy","authors":"J. Girard, Konstantinos Papatryfonos, G. Rodary, C. David, F. Lelarge, A. Ramdane","doi":"10.1109/ICIPRM.2016.7528791","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528791","url":null,"abstract":"Quantum Dashes (QDashes), some elongated and self-assembled semiconductor nanostructures are interesting candidates as building blocks for new laser devices with promising performances. To date, there was a lack of knowledge about the dimensionality of the confinement for carriers in such QDashes. We report on cross-sectional scanning tunneling microscopy and spectroscopy (X-STM/STS) performed on InAs(P)/InGaAsP/InP(001) QDashes, embedded in an optimized laser structure configuration. The active region consists of nine InAs(P) QDashes layers separated by InGaAsP barriers, sandwiched between a p-type and an n-type InP semiconductor. The STS measurements measured throughout the active region reveal a shift of the conduction band edges in agreement with built-in potential of the p-i-n junction. Furthermore we investigate the question of the dimensionality of the InAs(P) Q-Dashes. Local density of states measured on QDashes from layer to layer indicates a 1-D quantum-wire-like nature for these nanostructures whose squared wavefunctions were subsequently imaged by differential conductivity mapping.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117124446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528649
Chia‐Ming Chang, Li-Cheng Chang, C. Wu
The InGaAs planar and fin structure high electron mobility transistors (FinHEMTs) are demonstrated in this report. Compared with planar devices, threshold voltage (VT) of FinHEMT increases from -1.64 V to -1.04 V at VD = 2.0 V. On the other hand, sub-threshold swing (SS) decreases from 251.8 mV/decade to 88.4 mV/decade and drain induced barrier lowering (DIBL) reduces from 105.2mV/V to 52.6mV/V. A Silvaco TCAD is used to simulate band diagram of gate region to verify and explain the gate control mechanisms of FinHEMT. The simulation results indicate that band bending at metal and semiconductor interface, which is between etched fin sidewall and gate metal has significantly large influence on device on-off characteristics.
{"title":"Fabrication and characterization of InGaAs fin structure high electron mobility transistors","authors":"Chia‐Ming Chang, Li-Cheng Chang, C. Wu","doi":"10.1109/ICIPRM.2016.7528649","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528649","url":null,"abstract":"The InGaAs planar and fin structure high electron mobility transistors (FinHEMTs) are demonstrated in this report. Compared with planar devices, threshold voltage (VT) of FinHEMT increases from -1.64 V to -1.04 V at VD = 2.0 V. On the other hand, sub-threshold swing (SS) decreases from 251.8 mV/decade to 88.4 mV/decade and drain induced barrier lowering (DIBL) reduces from 105.2mV/V to 52.6mV/V. A Silvaco TCAD is used to simulate band diagram of gate region to verify and explain the gate control mechanisms of FinHEMT. The simulation results indicate that band bending at metal and semiconductor interface, which is between etched fin sidewall and gate metal has significantly large influence on device on-off characteristics.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115128874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528539
Kun Li, C. Chase, Y. Rao, C. Chang-Hasnain
We report monolithic, electrically-pumped tunable 1060-nm VCSELs with a high-contrast grating metastructure as the highly reflective tunable mirror. Single-mode lasing with CW operation is demonstrated up to 85°C providing output power larger than 1.3 mW at room temperature. A continuous tuning range of 35 nm is achieved with microelectromechanical actuation of the high-contrast grating mirror, showing a 3-dB bandwidth of 667 kHz in the tuning response. This is promising for the realization of a high-speed and widely wavelength tunable source with cost-effective fabrication processes, for applications in optical coherence tomography, LIDAR, and wavelength-division-multiplexed optical communication.
{"title":"Widely tunable 1060-nm high-contrast grating VCSEL","authors":"Kun Li, C. Chase, Y. Rao, C. Chang-Hasnain","doi":"10.1109/ICIPRM.2016.7528539","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528539","url":null,"abstract":"We report monolithic, electrically-pumped tunable 1060-nm VCSELs with a high-contrast grating metastructure as the highly reflective tunable mirror. Single-mode lasing with CW operation is demonstrated up to 85°C providing output power larger than 1.3 mW at room temperature. A continuous tuning range of 35 nm is achieved with microelectromechanical actuation of the high-contrast grating mirror, showing a 3-dB bandwidth of 667 kHz in the tuning response. This is promising for the realization of a high-speed and widely wavelength tunable source with cost-effective fabrication processes, for applications in optical coherence tomography, LIDAR, and wavelength-division-multiplexed optical communication.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"129 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124246393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528635
M. Oda, Yukina Kuroda, Ayaka Kishi, Y. Shinozuka
We investigate energy band structures of Si1-xSnx compound alloy in zincblende structure using interacting qasi-band (IQB) model. The previous IQB model has been developed for three element compound semiconductors such as A1-xBxD. To apply IQB for Si1-xSnx, we here extend the IQB for four element compounds and calculate the electronic structures of virtual alloy as Si1-xSnxSi1-ySny, where x=y. Diagonalizing a 20 × 20 non-Hermitian Hamiltonian matrix using sp3s* tight binding theory, we obtain quasi-band structures for several x. Comparing the band structures, we reveal that indirect-direct gap crossover in Si1-xSnx occurs around x = 0.39.
{"title":"Electronic structures calculation of Si1−xSnx compound alloy using interacting quasi-band model","authors":"M. Oda, Yukina Kuroda, Ayaka Kishi, Y. Shinozuka","doi":"10.1109/ICIPRM.2016.7528635","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528635","url":null,"abstract":"We investigate energy band structures of Si<sub>1-x</sub>Sn<sub>x</sub> compound alloy in zincblende structure using interacting qasi-band (IQB) model. The previous IQB model has been developed for three element compound semiconductors such as A<sub>1-x</sub>B<sub>x</sub>D. To apply IQB for Si<sub>1-x</sub>Sn<sub>x</sub>, we here extend the IQB for four element compounds and calculate the electronic structures of virtual alloy as Si<sub>1-x</sub>Sn<sub>x</sub>Si<sub>1-y</sub>Sn<sub>y</sub>, where x=y. Diagonalizing a 20 × 20 non-Hermitian Hamiltonian matrix using sp3s* tight binding theory, we obtain quasi-band structures for several x. Comparing the band structures, we reveal that indirect-direct gap crossover in Si<sub>1-x</sub>Sn<sub>x</sub> occurs around x = 0.39.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"226 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117114307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528636
V. Awasthi, Vivek Garg, B. S. Sengar, Rohit Singh, S. Pandey, Shailendra Kumar, C. Mukherjee, S. Mukherjee
A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.
{"title":"Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface","authors":"V. Awasthi, Vivek Garg, B. S. Sengar, Rohit Singh, S. Pandey, Shailendra Kumar, C. Mukherjee, S. Mukherjee","doi":"10.1109/ICIPRM.2016.7528636","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528636","url":null,"abstract":"A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117229629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528804
Jimmy‐Xuan Shen, D. Steiauf, E. Kioupakis, C. G. Van de Walle
Indium arsenide (InAs), with a low band gap of 0.35 eV, is used in long-wavelength photo-detectors, lasers, photovoltaic junctions and a host of other semiconductor devices. Very high Auger recombination coefficients (ranging from 10-27~10-26 cm6s-1) have been measured in this material. Here, we present first-principles-based investigations of Auger recombination processes in InAs. For the direct process, we calculate an Auger coefficient of 1.6 × 10-27 cm6s-1; for the indirect phonon-assisted process, the coefficient is 1.7 × 10-29 cm6s-1. Our results elucidate the role of strong spin-orbit coupling: in InAs, the spin-orbit splitting of the valence band is close in magnitude to the band gap, allowing for efficient excitation of Auger holes and leading to a significant enhancement of the Auger recombination coefficient.
{"title":"Auger recombination in InAs: Role of spin-orbit coupling and phonons","authors":"Jimmy‐Xuan Shen, D. Steiauf, E. Kioupakis, C. G. Van de Walle","doi":"10.1109/ICIPRM.2016.7528804","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528804","url":null,"abstract":"Indium arsenide (InAs), with a low band gap of 0.35 eV, is used in long-wavelength photo-detectors, lasers, photovoltaic junctions and a host of other semiconductor devices. Very high Auger recombination coefficients (ranging from 10<sup>-27</sup>~10<sup>-26</sup> cm<sup>6</sup>s<sup>-1</sup>) have been measured in this material. Here, we present first-principles-based investigations of Auger recombination processes in InAs. For the direct process, we calculate an Auger coefficient of 1.6 × 10<sup>-27</sup> cm<sup>6</sup>s<sup>-1</sup>; for the indirect phonon-assisted process, the coefficient is 1.7 × 10<sup>-29</sup> cm<sup>6</sup>s<sup>-1</sup>. Our results elucidate the role of strong spin-orbit coupling: in InAs, the spin-orbit splitting of the valence band is close in magnitude to the band gap, allowing for efficient excitation of Auger holes and leading to a significant enhancement of the Auger recombination coefficient.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127265168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528645
K. Nishibe, W. Jevasuwan, M. Mitome, Y. Bando, Zhong Lin Wang, N. Fukata
Selective doping and band-offset in core-shell nanowire (NW) structures using germanium (Ge)/ silicon (Si) can realize a type of high electron mobility transistor (HEMT) structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. Using these techniques, we obtained conclusive evidence of hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B doping concentration in the Si shell.
{"title":"Growth and doping control of Ge/Si and Si/Ge core-shell nanowires","authors":"K. Nishibe, W. Jevasuwan, M. Mitome, Y. Bando, Zhong Lin Wang, N. Fukata","doi":"10.1109/ICIPRM.2016.7528645","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528645","url":null,"abstract":"Selective doping and band-offset in core-shell nanowire (NW) structures using germanium (Ge)/ silicon (Si) can realize a type of high electron mobility transistor (HEMT) structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. Using these techniques, we obtained conclusive evidence of hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B doping concentration in the Si shell.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127528475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528575
V. Midili, M. Squartecchia, T. Johansen, V. Nodjiadjim, M. Riet, J. Dupuy, A. Konczykowska
Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency behavior of the device. This paper presents two distinct modeling approaches: one based on EM simulations and one based on a physical equivalent circuit description. In the first approach, the EM simulations of contact pads and ballasting network are combined with the small-signal model of the intrinsic device. In the second approach, the ballasting network is modeled with lumped components derived from physical analysis of the layout and then combined with EM simulated contact pads and with the device model. The models are validated against S-parameters measurements of real devices up to 65 GHz showing good agreement in terms of maximum available gain. In addition, a MAG of 2-4 dB at 170 GHz shows that ballasted devices can be employed for power amplifiers in D band.
{"title":"A physical based equivalent circuit modeling approach for ballasted InP DHBT multi-finger devices at millimeter-wave frequencies","authors":"V. Midili, M. Squartecchia, T. Johansen, V. Nodjiadjim, M. Riet, J. Dupuy, A. Konczykowska","doi":"10.1109/ICIPRM.2016.7528575","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528575","url":null,"abstract":"Multifinger InP DHBTs can be designed with a ballasting resistor to improve power capability. However accurate modeling is needed to predict high frequency behavior of the device. This paper presents two distinct modeling approaches: one based on EM simulations and one based on a physical equivalent circuit description. In the first approach, the EM simulations of contact pads and ballasting network are combined with the small-signal model of the intrinsic device. In the second approach, the ballasting network is modeled with lumped components derived from physical analysis of the layout and then combined with EM simulated contact pads and with the device model. The models are validated against S-parameters measurements of real devices up to 65 GHz showing good agreement in terms of maximum available gain. In addition, a MAG of 2-4 dB at 170 GHz shows that ballasted devices can be employed for power amplifiers in D band.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125112429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528604
V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev
In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.
{"title":"Local distribution of the material composition in the V-defect region of HgCdTe epitaxial films","authors":"V. Novikov, D. Grigoryev, D. Bezrodnyy, S. Dvoretsky, M. Yakushev","doi":"10.1109/ICIPRM.2016.7528604","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528604","url":null,"abstract":"In this paper the local distribution of the material composition in the V-defect region of HgCdTe epitaxial films is investigated. The local composition distribution is studied by the Kelvin Force Probe Microscopy method and scanning electron microscopy with energy dispersive X-ray analysis. It is demonstrated that in the V-defect region of a Hg1-xCdxTe epitaxial film inhomogeneous distribution of the material component composition is observed. Analysis of the obtained experimental data shows that V-defects are distinguished by an increased mercury content.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"46 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125901047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528573
Donghyeok Bae, Jaehong Park, Maengkyu Kim, Y. Jeong, Kyounghoon Yang
Summary form only given. Resonant-tunneling-diode (RTD) based reconfigurable logic gates have been designed and fabricated for RTD-based programmable logic array (PLA) applications. As PLA building blocks, two reconfigurable logic gates with three input terminals are proposed. The implemented gates show the reconfigurable functions of AND, OR, Majority, NOT, XOR, XNOR and 3-input XOR exploiting threshold characteristics of the RTD monostable-bistable transition logic element (MOBILE). The operation of the fabricated gates is successfully confirmed up to the clock frequency of 5 GHz. As for the full-adder topology, the number of devices in the proposed gate-based full-adder is less than a half of that in the conventional CMOS full-adder topology.
{"title":"RTD-based reconfigurable logic gates for programmable logic array applications","authors":"Donghyeok Bae, Jaehong Park, Maengkyu Kim, Y. Jeong, Kyounghoon Yang","doi":"10.1109/ICIPRM.2016.7528573","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528573","url":null,"abstract":"Summary form only given. Resonant-tunneling-diode (RTD) based reconfigurable logic gates have been designed and fabricated for RTD-based programmable logic array (PLA) applications. As PLA building blocks, two reconfigurable logic gates with three input terminals are proposed. The implemented gates show the reconfigurable functions of AND, OR, Majority, NOT, XOR, XNOR and 3-input XOR exploiting threshold characteristics of the RTD monostable-bistable transition logic element (MOBILE). The operation of the fabricated gates is successfully confirmed up to the clock frequency of 5 GHz. As for the full-adder topology, the number of devices in the proposed gate-based full-adder is less than a half of that in the conventional CMOS full-adder topology.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126049066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
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