2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528820
Sigiro Mula, Ho Ching-Hwa
We report on extensive structural and optical studies of a variety of pure and Re-, Au-, Fe-doped molybdenum disulfide (MoS2) single crystals which grown by chemical vapor transport (CVT) method. In order to compare structural properties of crystals with different doping we conducted X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. For optical characterization we used Raman spectroscopy, piezoreflectance (PzR), electrolyte electroreflectance (EER) and photoconductivity (PC).
{"title":"Study of Re, Au, and Fe dopant effect on the structure and optical properties of molybdenum disulfide single crystals","authors":"Sigiro Mula, Ho Ching-Hwa","doi":"10.1109/ICIPRM.2016.7528820","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528820","url":null,"abstract":"We report on extensive structural and optical studies of a variety of pure and Re-, Au-, Fe-doped molybdenum disulfide (MoS2) single crystals which grown by chemical vapor transport (CVT) method. In order to compare structural properties of crystals with different doping we conducted X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. For optical characterization we used Raman spectroscopy, piezoreflectance (PzR), electrolyte electroreflectance (EER) and photoconductivity (PC).","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130178946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528698
T. Iyama, H. Kawabata, Takahiro Fukuzumi, H. Tachikawa
Structures and electronic states of the aryl radical functionalized graphene have been investigated by means of density functional theory (DFT) method to elucidate the effects of functionalization on the electronic states of graphene (GR). Also, the reaction mechanism of aryl radical with GR was investigated. The benzene, biphenyl, pterphenyl, and p-quaterphenyl radicals (denoted by (Bz)n (n=1-4), where n means numbers of benzene rings in aryl radical) were examined as aryl radicals. The DFT calculation of GR-(Bz)n (n=1-4) showed that the aryl radical binds to the carbon atom of GR, and a C-C single bond was formed. The binding energies of aryl radicals to GR were calculated to be ca.6.0 kcal mol-1 at the CAM-B3LYP/6-311G(d,p) level. It was found that the activation barrier exists in the aryl radical addition: the barrier heights were calculated to be 10.0 kcal/mol. The electronic states of GR-(Bz)n were discussed on the basis of theoretical results.
{"title":"Electronic states of organic radical-functionalized graphenes and fullerenes: Density functional theory (DFT) study","authors":"T. Iyama, H. Kawabata, Takahiro Fukuzumi, H. Tachikawa","doi":"10.1109/ICIPRM.2016.7528698","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528698","url":null,"abstract":"Structures and electronic states of the aryl radical functionalized graphene have been investigated by means of density functional theory (DFT) method to elucidate the effects of functionalization on the electronic states of graphene (GR). Also, the reaction mechanism of aryl radical with GR was investigated. The benzene, biphenyl, pterphenyl, and p-quaterphenyl radicals (denoted by (Bz)n (n=1-4), where n means numbers of benzene rings in aryl radical) were examined as aryl radicals. The DFT calculation of GR-(Bz)n (n=1-4) showed that the aryl radical binds to the carbon atom of GR, and a C-C single bond was formed. The binding energies of aryl radicals to GR were calculated to be ca.6.0 kcal mol-1 at the CAM-B3LYP/6-311G(d,p) level. It was found that the activation barrier exists in the aryl radical addition: the barrier heights were calculated to be 10.0 kcal/mol. The electronic states of GR-(Bz)n were discussed on the basis of theoretical results.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128985859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528735
Jie Hu, S. Stoffels, S. Lenci, N. Ronchi, B. de Jaeger, S. You, B. Bakeroot, G. Groeseneken, S. Decoutere
The impact of AlGaN barrier recess on the leakage, forward voltage, and dynamic characteristics of Al-GaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been investigated. With 4-nm remaining AlGaN barrier in the recessed anode region, GET-SBDs show a median leakage current of 1 nA/mm and a forward voltage of 1.26 V. We found out that the leakage current of GET-SBDs gradually reduces with the number of recess cycles. A two-dimensional TCAD simulation also shows a reducing electric field with increasing recess depth, at the corner of the Schottky contact. Furthermore, pulsed I-V measurements were performed, showing that recessed GET-SBDs feature a higher increase of the forward voltage after recess, compared with non-recessed GET-SBDs. This observation has been explained by a trapping mechanism occurring at the corner of the edge termination.
{"title":"Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN schottky barrier diodes with gated edge termination","authors":"Jie Hu, S. Stoffels, S. Lenci, N. Ronchi, B. de Jaeger, S. You, B. Bakeroot, G. Groeseneken, S. Decoutere","doi":"10.1109/ICIPRM.2016.7528735","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528735","url":null,"abstract":"The impact of AlGaN barrier recess on the leakage, forward voltage, and dynamic characteristics of Al-GaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been investigated. With 4-nm remaining AlGaN barrier in the recessed anode region, GET-SBDs show a median leakage current of 1 nA/mm and a forward voltage of 1.26 V. We found out that the leakage current of GET-SBDs gradually reduces with the number of recess cycles. A two-dimensional TCAD simulation also shows a reducing electric field with increasing recess depth, at the corner of the Schottky contact. Furthermore, pulsed I-V measurements were performed, showing that recessed GET-SBDs feature a higher increase of the forward voltage after recess, compared with non-recessed GET-SBDs. This observation has been explained by a trapping mechanism occurring at the corner of the edge termination.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128895632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528676
N. Tatemizo, S. Sonoda, K. Nishio, T. Isshiki
The crystallographic properties of AlN films doped with 3d transition metal (3d-TM: Ti, V, and Cr, concentration x: 0-12 %) showing distinctive optical absorption structures in visible light region were investigated. The films were prepared on SiO2 glass substrates by rf sputtering. X-ray diffraction (XRD), transmission electron microscopy (TEM), and 3d-TM K-edge X-ray absorption fine structure (XAFS) measurements have been made at room temperature on the films. Both out-of-plane and in-plane XRD profiles revealed that all the films had wurtzite structure with a high degree of c-axis preferred orientation. TEM results showed that the films consisted of columnar crystals with random rotation of a-axis. The 3d-TM K-edge XAFS spectrum indicated that TM ions are substituted for Al in wurtzite AlN. These results suggest that the distinctive absorption structures in visible light region derive from crystals described as wurtzite (Al1-x, TMx)N.
{"title":"Crystallographic properties of 3d transition metal (Ti, V, and Cr) doped AlN films","authors":"N. Tatemizo, S. Sonoda, K. Nishio, T. Isshiki","doi":"10.1109/ICIPRM.2016.7528676","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528676","url":null,"abstract":"The crystallographic properties of AlN films doped with 3d transition metal (3d-TM: Ti, V, and Cr, concentration x: 0-12 %) showing distinctive optical absorption structures in visible light region were investigated. The films were prepared on SiO2 glass substrates by rf sputtering. X-ray diffraction (XRD), transmission electron microscopy (TEM), and 3d-TM K-edge X-ray absorption fine structure (XAFS) measurements have been made at room temperature on the films. Both out-of-plane and in-plane XRD profiles revealed that all the films had wurtzite structure with a high degree of c-axis preferred orientation. TEM results showed that the films consisted of columnar crystals with random rotation of a-axis. The 3d-TM K-edge XAFS spectrum indicated that TM ions are substituted for Al in wurtzite AlN. These results suggest that the distinctive absorption structures in visible light region derive from crystals described as wurtzite (Al1-x, TMx)N.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130198783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528703
Takanori Mitsuno, Y. Taniguchi, Y. Ohno, M. Nagase
Summary form only given. Intrinsic pH sensitivity of graphene field-effect transistors (FETs) were investigated. To free from defects and dislocations on the graphene surface, high-quality graphene film synthesized on a SiC substrate were used. And to remove other ions' influences, pH-adjusted phosphate-buffered solutions were prepared. In addition, a resist-free device fabrication, which was air plasma etching with a stencil mask, was carried out to reduce the residue effect. No shift of the transfer characteristics were observed with changing pH values. These results indicate that graphene film without any defects and dislocations does not bind to hydrogen ions or hydroxide ions.
{"title":"Intrinsic pH sensitivity of graphene field-effect transistors","authors":"Takanori Mitsuno, Y. Taniguchi, Y. Ohno, M. Nagase","doi":"10.1109/ICIPRM.2016.7528703","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528703","url":null,"abstract":"Summary form only given. Intrinsic pH sensitivity of graphene field-effect transistors (FETs) were investigated. To free from defects and dislocations on the graphene surface, high-quality graphene film synthesized on a SiC substrate were used. And to remove other ions' influences, pH-adjusted phosphate-buffered solutions were prepared. In addition, a resist-free device fabrication, which was air plasma etching with a stencil mask, was carried out to reduce the residue effect. No shift of the transfer characteristics were observed with changing pH values. These results indicate that graphene film without any defects and dislocations does not bind to hydrogen ions or hydroxide ions.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"30 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132871247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528657
Y. Imanishi, T. Nakaoka
We report on simple fabrication of silver (Ag) nanoparticles and room-temperature growth of silver telluride (Ag-Te) nanowires and novel nanostructures using the Ag nanoparticles as the seed. Size-controlled Ag nanoparticles are formed by thermal annealing of a thin Ag film. For example, a 4 nm thick Ag film is transformed into small and uniform Ag nanoparticles with average diameter of 7 nm and the standard deviation of 2 nm. Room temperature deposition of tellurium onto the Ag nanoparticles produces Ag-Te nanoparticles, nanowires and snail-like nanostructures, depending on the diameter of the Ag nanoparticles. We find that the diameter of seed Ag nanoparticles is the critical growth parameter for the formation of different Ag-Te nanostructures.
{"title":"Morphology control of Ag-Te nanostructures by seed silver nanoparticles","authors":"Y. Imanishi, T. Nakaoka","doi":"10.1109/ICIPRM.2016.7528657","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528657","url":null,"abstract":"We report on simple fabrication of silver (Ag) nanoparticles and room-temperature growth of silver telluride (Ag-Te) nanowires and novel nanostructures using the Ag nanoparticles as the seed. Size-controlled Ag nanoparticles are formed by thermal annealing of a thin Ag film. For example, a 4 nm thick Ag film is transformed into small and uniform Ag nanoparticles with average diameter of 7 nm and the standard deviation of 2 nm. Room temperature deposition of tellurium onto the Ag nanoparticles produces Ag-Te nanoparticles, nanowires and snail-like nanostructures, depending on the diameter of the Ag nanoparticles. We find that the diameter of seed Ag nanoparticles is the critical growth parameter for the formation of different Ag-Te nanostructures.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127618578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528671
Y. Yamaoka, Kazuhiro Ito, A. Ubukata, Y. Yano, T. Tabuchi, Koh Matsumoto, T. Egawa
The vertical leakage current of AlGaN/GaN high-electron-mobility transistors on Si substrates was studied. The effects of the Al content in the AlGaN buffer layer and pit density on the vertical leakage current were not as significant as the effect of the initial AlN layer's crystal quality.
{"title":"Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN high-electron-mobility transistor structures","authors":"Y. Yamaoka, Kazuhiro Ito, A. Ubukata, Y. Yano, T. Tabuchi, Koh Matsumoto, T. Egawa","doi":"10.1109/ICIPRM.2016.7528671","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528671","url":null,"abstract":"The vertical leakage current of AlGaN/GaN high-electron-mobility transistors on Si substrates was studied. The effects of the Al content in the AlGaN buffer layer and pit density on the vertical leakage current were not as significant as the effect of the initial AlN layer's crystal quality.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125556073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528822
S. Lourdudoss
Summary for only given. We present epitaxial lateral overgrowth method (ELOG) as a means of achieving good quality III-V materials on silicon (Si). In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In the corrugated epitaxial lateral overgrowth (CELOG) technique recently developed in our laboratory, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We demonstrate the realization of multi-quantum wells grown on ELOG InP/Si that have near laser emission at 1.55 μm as well as the templates of InP frusta on Si with good optical quality for further quantum dot growth by combining nanoimprinting and ELOG. We indicate viable routes for realizing III-V/Si heterojunction solar cells especially by CELOG and also truly monolithic photonic integration on silicon by both CELOG and ELOG methods.
{"title":"Heteroepitaxy of InP on Si for photonic and photovoltaic applications","authors":"S. Lourdudoss","doi":"10.1109/ICIPRM.2016.7528822","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528822","url":null,"abstract":"Summary for only given. We present epitaxial lateral overgrowth method (ELOG) as a means of achieving good quality III-V materials on silicon (Si). In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In the corrugated epitaxial lateral overgrowth (CELOG) technique recently developed in our laboratory, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We demonstrate the realization of multi-quantum wells grown on ELOG InP/Si that have near laser emission at 1.55 μm as well as the templates of InP frusta on Si with good optical quality for further quantum dot growth by combining nanoimprinting and ELOG. We indicate viable routes for realizing III-V/Si heterojunction solar cells especially by CELOG and also truly monolithic photonic integration on silicon by both CELOG and ELOG methods.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126334736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528719
K. Komatsu, E. Watanabe, D. Tsuya, Kenji Watanabe, T. Taniguchi, S. Moriyama
Recently, heterostructures of 2-D materials have attracted great interests because they form superlattices which allow band engineering as well as use of multiple degenerate degrees of freedom. We have fabricated hexag- onal boron nitride (hBN)/graphene/hBN superlattices with one-dimensional edge contacts as well as a Hall-bar geometry. Clear conductance oscillations in magnetic fields have been observed, originating from the Hofstadter's butterfly which indicates the good alignment of graphene and hBN crystal orientation. In addition, giant non-local resistance near secondary Dirac point originated by the valley Hall effect has been observed in zero magnetic field. Our experimental results indicate the high quality samples of graphene superlattices with quasi-ballistic transport regime are realized.
{"title":"Observation of Hofstadter butterfly and valley Hall effect in hBN/graphene/hBN heterostructures","authors":"K. Komatsu, E. Watanabe, D. Tsuya, Kenji Watanabe, T. Taniguchi, S. Moriyama","doi":"10.1109/ICIPRM.2016.7528719","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528719","url":null,"abstract":"Recently, heterostructures of 2-D materials have attracted great interests because they form superlattices which allow band engineering as well as use of multiple degenerate degrees of freedom. We have fabricated hexag- onal boron nitride (hBN)/graphene/hBN superlattices with one-dimensional edge contacts as well as a Hall-bar geometry. Clear conductance oscillations in magnetic fields have been observed, originating from the Hofstadter's butterfly which indicates the good alignment of graphene and hBN crystal orientation. In addition, giant non-local resistance near secondary Dirac point originated by the valley Hall effect has been observed in zero magnetic field. Our experimental results indicate the high quality samples of graphene superlattices with quasi-ballistic transport regime are realized.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116116356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528810
N. Mohamed, Feijiu Wang, Sandhaya Koirala, HongEn Lim, S. Mouri, Y. Miyauchi, K. Matsuda
Semiconducting transition metal dichalcogenides (TMDs) have attracted great research interests due to both from fundamental physics and their interesting potential applications of optoelectronic devices. It is very crucial to know its photoluminescence (PL) quantum yield, concurrently with the radiative lifetimes of its elementary excitation, exciton (electron-hole pair). We have experimentally evaluated intrinsic exciton radiative lifetime of 2D (two-dimensional) semiconductor TMDs of monolayer WSe2 from static and time-resolved PL spectroscopy at room temperature. In order to calculate the radiative lifetime, we also employed PL quantum yield measurements using relative method with standard reference fluorescent dye. The exciton radiative lifetime of ~40 ns was evaluated from PL quantum yield of ~1 % and PL decay time of several hundred ps. This value of radiative lifetime of several tenth ns suggests the contribution of dark states and finite exciton coherence length (area) of several nm.
{"title":"Photoluminescence quantum yield and long exciton radiative lifetime in monolayer two-dimensional transition metal dichalcogenides","authors":"N. Mohamed, Feijiu Wang, Sandhaya Koirala, HongEn Lim, S. Mouri, Y. Miyauchi, K. Matsuda","doi":"10.1109/ICIPRM.2016.7528810","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528810","url":null,"abstract":"Semiconducting transition metal dichalcogenides (TMDs) have attracted great research interests due to both from fundamental physics and their interesting potential applications of optoelectronic devices. It is very crucial to know its photoluminescence (PL) quantum yield, concurrently with the radiative lifetimes of its elementary excitation, exciton (electron-hole pair). We have experimentally evaluated intrinsic exciton radiative lifetime of 2D (two-dimensional) semiconductor TMDs of monolayer WSe2 from static and time-resolved PL spectroscopy at room temperature. In order to calculate the radiative lifetime, we also employed PL quantum yield measurements using relative method with standard reference fluorescent dye. The exciton radiative lifetime of ~40 ns was evaluated from PL quantum yield of ~1 % and PL decay time of several hundred ps. This value of radiative lifetime of several tenth ns suggests the contribution of dark states and finite exciton coherence length (area) of several nm.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116202838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
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