2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)最新文献
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528823
T. Fujii, K. Takeda, Erina Kanno, H. Nishi, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo
We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs grown on an InP template.
{"title":"Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers","authors":"T. Fujii, K. Takeda, Erina Kanno, H. Nishi, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo","doi":"10.1109/ICIPRM.2016.7528823","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528823","url":null,"abstract":"We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs grown on an InP template.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131613971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528499
Yuki Anno, K. Takei, S. Akita, T. Arie
The thermal conductivity must be reduced to apply graphene as thermoelectric devices. Because the main heat carrier in graphene is phonon, introducing defects into graphene affects the phonon propagation in graphene, resulting in the change in the thermal conductivity. Here we investigate the effect of defects induced by oxygen plasma treatment on the thermoelectric property of graphene. The thermoelectric power of graphene with defects gradually decreases with increasing the density of defects compared to that of pristine graphene. Although defects degrade the electronic transport, leading to the reduction in both the thermoelectric power and electrical conductivity, the thermal conductivity is more reduced. As a consequence, graphene with defects shows higher thermoelectric figure of merit. This suggests that the performance of graphene-based thermoelectric devices can be enhanced more effectively by introducing defects in graphene.
{"title":"Effect of defects on graphene thermoelectric properties","authors":"Yuki Anno, K. Takei, S. Akita, T. Arie","doi":"10.1109/ICIPRM.2016.7528499","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528499","url":null,"abstract":"The thermal conductivity must be reduced to apply graphene as thermoelectric devices. Because the main heat carrier in graphene is phonon, introducing defects into graphene affects the phonon propagation in graphene, resulting in the change in the thermal conductivity. Here we investigate the effect of defects induced by oxygen plasma treatment on the thermoelectric property of graphene. The thermoelectric power of graphene with defects gradually decreases with increasing the density of defects compared to that of pristine graphene. Although defects degrade the electronic transport, leading to the reduction in both the thermoelectric power and electrical conductivity, the thermal conductivity is more reduced. As a consequence, graphene with defects shows higher thermoelectric figure of merit. This suggests that the performance of graphene-based thermoelectric devices can be enhanced more effectively by introducing defects in graphene.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130923413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528581
Chengzhi Xie, V. Pusino, A. Khalid, M. Aziz, M. Steer, D. Cumming
We present the monolithic fabrication of an active photo-pixel made in InSb on a GaAs substrate that is suitable for large-scale integration into a focal plane array. Pixel addressing is provided by the co-integration of a GaAs MESFET with an InSb photodiode. Various highly selective etch processes for distinct material layers were established. A low temperature annealed Ohmic contact was also achieved so that the processing temperature never exceeded 180 °C and no damage to the InSb detectors was observed. Furthermore, since there is a considerable etch step (> 6 μ) that metal must straddle without breaking, we developed an intermediate step using polyimide to provide a smoothing section between the lower MESFET and upper photodiode regions of the device. This heterogeneous technology creates great potential to realize a new type of monolithic focal plane array of addressable pixels for imaging in the medium wavelength infrared range.
{"title":"Monolithic fabrication of InSb-based photo-pixel for Mid-IR imaging","authors":"Chengzhi Xie, V. Pusino, A. Khalid, M. Aziz, M. Steer, D. Cumming","doi":"10.1109/ICIPRM.2016.7528581","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528581","url":null,"abstract":"We present the monolithic fabrication of an active photo-pixel made in InSb on a GaAs substrate that is suitable for large-scale integration into a focal plane array. Pixel addressing is provided by the co-integration of a GaAs MESFET with an InSb photodiode. Various highly selective etch processes for distinct material layers were established. A low temperature annealed Ohmic contact was also achieved so that the processing temperature never exceeded 180 °C and no damage to the InSb detectors was observed. Furthermore, since there is a considerable etch step (> 6 μ) that metal must straddle without breaking, we developed an intermediate step using polyimide to provide a smoothing section between the lower MESFET and upper photodiode regions of the device. This heterogeneous technology creates great potential to realize a new type of monolithic focal plane array of addressable pixels for imaging in the medium wavelength infrared range.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133529595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528805
I. Mahboob, H. Okamoto, H. Yamaguchi
The phonons in an electromechanical system are harnessed to mimic the fundamentals of the Ising model. Specifically spins are mimicked by mechanical parametric resonances and the coupling between them is created by generating two-mode squeezed states. These results suggest that an electromechanical system could be developed to imitate the Ising Hamiltonian for a large number of spins with multiple degrees of coupling, a task that would overwhelm a conventional computer.
{"title":"Simulating the Ising Hamiltonian with phonons","authors":"I. Mahboob, H. Okamoto, H. Yamaguchi","doi":"10.1109/ICIPRM.2016.7528805","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528805","url":null,"abstract":"The phonons in an electromechanical system are harnessed to mimic the fundamentals of the Ising model. Specifically spins are mimicked by mechanical parametric resonances and the coupling between them is created by generating two-mode squeezed states. These results suggest that an electromechanical system could be developed to imitate the Ising Hamiltonian for a large number of spins with multiple degrees of coupling, a task that would overwhelm a conventional computer.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133633039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528743
T. Uchida, R. Jinno, S. Takemoto, K. Kaneko, S. Fujita
Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga2O3) and α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructure devices. We prepared α-(AlxGa1-x)2O3 alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga2O3/α-(AlxGa1-x)2O3 heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The band alignment was estimated to be type I with very narrow valence-band offset energy.
{"title":"Characterization of band offset in α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructures","authors":"T. Uchida, R. Jinno, S. Takemoto, K. Kaneko, S. Fujita","doi":"10.1109/ICIPRM.2016.7528743","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528743","url":null,"abstract":"Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga<sub>2</sub>O<sub>3</sub>) and α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/ α-Ga<sub>2</sub>O<sub>3</sub> heterostructure devices. We prepared α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga<sub>2</sub>O<sub>3</sub>/α-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The band alignment was estimated to be type I with very narrow valence-band offset energy.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131662892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528836
M. Matsubara, E. Bellotti
Carbon (C) is a common and important impurity in GaN. C doping is employed to obtain semi-insulating buffer layers, which are used for high electron mobility transistors. However, increasing C concentration means the increase of C-related trap levels in GaN, which causes detrimental effects to the device performance. These unexpected C-related trap levels are observed in a number of experiments, but the physical origins of these levels are still unknown. We performed first-principles calculations within density functional theory using hybrid density functionals. Our focuses were on the C-related complexes, about which very little is known so far. From the formation energies of various C-related complexes we obtained thermal and optical activation energies of the trap levels and directly compared them with the experimental values in order to identify the physical origins of the experimentally observed trap levels.
{"title":"A first-principles study of carbon-related complexes and energy levels in GaN using heyd-scuseria-ernzerhof hybrid functionals","authors":"M. Matsubara, E. Bellotti","doi":"10.1109/ICIPRM.2016.7528836","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528836","url":null,"abstract":"Carbon (C) is a common and important impurity in GaN. C doping is employed to obtain semi-insulating buffer layers, which are used for high electron mobility transistors. However, increasing C concentration means the increase of C-related trap levels in GaN, which causes detrimental effects to the device performance. These unexpected C-related trap levels are observed in a number of experiments, but the physical origins of these levels are still unknown. We performed first-principles calculations within density functional theory using hybrid density functionals. Our focuses were on the C-related complexes, about which very little is known so far. From the formation energies of various C-related complexes we obtained thermal and optical activation energies of the trap levels and directly compared them with the experimental values in order to identify the physical origins of the experimentally observed trap levels.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115445415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528751
D. Inoue, T. Hiratani, K. Fukuda, T. Tomiyasu, T. Amemiya, N. Nishiyama, S. Arai
We successfully demonstrated high-speed direct modulation of GaInAsP/InP membrane DFB laser on Si substrate for on-chip optical interconnection. The device showed threshold current of 0.21mA and single-mode operation with SMSR = 47dB. From small signal modulation, a record high modulation efficiency of 11GHz/mA1/2 was obtained. A 10 Gbps direct modulation with a bit-error-rate (BER) <; 10-9 was demonstrated at 1mA bias current.
{"title":"10 Gbps operation of membrane DFB laser on silicon with record high modulation efficiency","authors":"D. Inoue, T. Hiratani, K. Fukuda, T. Tomiyasu, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2016.7528751","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528751","url":null,"abstract":"We successfully demonstrated high-speed direct modulation of GaInAsP/InP membrane DFB laser on Si substrate for on-chip optical interconnection. The device showed threshold current of 0.21mA and single-mode operation with SMSR = 47dB. From small signal modulation, a record high modulation efficiency of 11GHz/mA1/2 was obtained. A 10 Gbps direct modulation with a bit-error-rate (BER) <; 10-9 was demonstrated at 1mA bias current.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124196480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528696
S. Nakajo, T. Murakami, Haruka Shimada, Kozo Osawa, M. Murata, T. Itaya, K. Oshida, K. Takeuchi, M. Endo
Carbon nanofibers contained nano cellulose were prepared and the resulting carbon nanofiber composites were characterized by electron microscopy, Brunauer-Emmett-Teller (BET) method and image analysis. The samples are also evaluated as electrodes of electric double layer capacitor. The diameters of nano fibers are around 300nm estimated by scanning electron microscope (SEM). Structure of the nano fibers is revealed by transmission electron microscope (TEM) observation and image analysis. The nano structured carbons are porous materials with large specific surface area. The nano and micro pores are seemed to be formed by intertwining of heterogeneous catenulate molecular of cellulose and PAN (poly acrylonitrile) or PVA (polyvinyl alcohol) each other and/or missing of the cellulose during carbonization.
{"title":"Characterization of carbon/carbon composites containing cellulose by electrospinning","authors":"S. Nakajo, T. Murakami, Haruka Shimada, Kozo Osawa, M. Murata, T. Itaya, K. Oshida, K. Takeuchi, M. Endo","doi":"10.1109/ICIPRM.2016.7528696","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528696","url":null,"abstract":"Carbon nanofibers contained nano cellulose were prepared and the resulting carbon nanofiber composites were characterized by electron microscopy, Brunauer-Emmett-Teller (BET) method and image analysis. The samples are also evaluated as electrodes of electric double layer capacitor. The diameters of nano fibers are around 300nm estimated by scanning electron microscope (SEM). Structure of the nano fibers is revealed by transmission electron microscope (TEM) observation and image analysis. The nano structured carbons are porous materials with large specific surface area. The nano and micro pores are seemed to be formed by intertwining of heterogeneous catenulate molecular of cellulose and PAN (poly acrylonitrile) or PVA (polyvinyl alcohol) each other and/or missing of the cellulose during carbonization.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115995345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.7567/SSDM.2016.F-2-01
Liyuan Han
The recent dramatic rise in power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) has triggered intense research worldwide. However, high PCE values have often been reached with poor stability at an illuminated area of typically less than 0.1 square centimeter. We used heavily doped inorganic charge extraction layers in planar PSCs to achieve very rapid carrier extraction, even with 10- to 20- nanometer-thick layers, avoiding pinholes and eliminating local structural defects over large areas. The robust inorganic nature of the layers allowed for the fabrication of PSCs with an aperture area >1 square centimeter that have a PCE >15%, as certified by an accredited photovoltaic calibration laboratory. Hysteresis in the current-voltage characteristics was eliminated; the PSCs were stable, with >90% of the initial PCE remaining after 1000 hours of light soaking.
{"title":"Efficient and stable large-area perovskite solar cells","authors":"Liyuan Han","doi":"10.7567/SSDM.2016.F-2-01","DOIUrl":"https://doi.org/10.7567/SSDM.2016.F-2-01","url":null,"abstract":"The recent dramatic rise in power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) has triggered intense research worldwide. However, high PCE values have often been reached with poor stability at an illuminated area of typically less than 0.1 square centimeter. We used heavily doped inorganic charge extraction layers in planar PSCs to achieve very rapid carrier extraction, even with 10- to 20- nanometer-thick layers, avoiding pinholes and eliminating local structural defects over large areas. The robust inorganic nature of the layers allowed for the fabrication of PSCs with an aperture area >1 square centimeter that have a PCE >15%, as certified by an accredited photovoltaic calibration laboratory. Hysteresis in the current-voltage characteristics was eliminated; the PSCs were stable, with >90% of the initial PCE remaining after 1000 hours of light soaking.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116278386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-26DOI: 10.1109/ICIPRM.2016.7528590
A. Guzev, A. P. Kovchavtcev, A. Tsarenko, M. Yakushev, V. Varavin, V. Vasilyev, S. Dvoretsky, D. Marin, I. Sabinina, D. Shefer, G. Sidorov, Yu. G. Sidorov
We studied the electrical properties of undoped and indium-doped and arsenic-doped CdXHg1-XTe layers with x ≈ 0.3 - 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing at saturated mercury vapor pressure. It is explained by suppression of recombination centers density. Temperature dependence of the reverse currents of p+-n junctions fabricated in Cd0.3Hg0.7Te heterostuctures grown by MBE on Si substrates has been studied.
{"title":"The electrical properties of HgCdTe layers grown by MBE on Si and P + / n junction formed on its basis","authors":"A. Guzev, A. P. Kovchavtcev, A. Tsarenko, M. Yakushev, V. Varavin, V. Vasilyev, S. Dvoretsky, D. Marin, I. Sabinina, D. Shefer, G. Sidorov, Yu. G. Sidorov","doi":"10.1109/ICIPRM.2016.7528590","DOIUrl":"https://doi.org/10.1109/ICIPRM.2016.7528590","url":null,"abstract":"We studied the electrical properties of undoped and indium-doped and arsenic-doped CdXHg1-XTe layers with x ≈ 0.3 - 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing at saturated mercury vapor pressure. It is explained by suppression of recombination centers density. Temperature dependence of the reverse currents of p+-n junctions fabricated in Cd0.3Hg0.7Te heterostuctures grown by MBE on Si substrates has been studied.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123522210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
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