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Characterization and evaluation of commercial tracers for x-space magnetic particle imaging
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-16 DOI: 10.1016/j.jmmm.2025.172889
Eric Daniel Imhoff , Andrii Melnyk , Carlos M. Rinaldi-Ramos
Commercial magnetic particle imaging (MPI) tracers are utilized for many applications including as reference materials for comparing tracer performance, but comparative measurements of many tracers on a single imaging platform are uncommon. This study uses relaxometry and 2D imaging in a pre-clinical MOMENTUM scanner to characterize and evaluate the performance of six common commercial tracers for MPI: Synomag-D Plain, Synomag-D NH2, Synomag-D PEG, Perimag, Vivotrax, and Vivotrax Plus. Repeated measurements of samples showed considerable variability while inter-sample differences were generally negligible. Sensitivity between the two modes is strongly correlated while resolution of the two modes was only moderately correlated. Further, relaxometric measurements tend to predict better resolution than is achieved in 2D imaging. All evaluated tracers have resolutions within 1 mm of each other on the MOMENTUM imager. These results illustrate that relaxometer measurements can be used to broadly predict MPI performance but do not accurately recreate the physical processes or differences in hardware and software of MPI. This study provides MPI measurements of tracers that may be useful to researchers while highlighting the challenges of making comparisons between tracers due to variation within samples and across different measurement techniques and instruments.
{"title":"Characterization and evaluation of commercial tracers for x-space magnetic particle imaging","authors":"Eric Daniel Imhoff ,&nbsp;Andrii Melnyk ,&nbsp;Carlos M. Rinaldi-Ramos","doi":"10.1016/j.jmmm.2025.172889","DOIUrl":"10.1016/j.jmmm.2025.172889","url":null,"abstract":"<div><div>Commercial magnetic particle imaging (MPI) tracers are utilized for many applications including as reference materials for comparing tracer performance, but comparative measurements of many tracers on a single imaging platform are uncommon. This study uses relaxometry and 2D imaging in a pre-clinical MOMENTUM scanner to characterize and evaluate the performance of six common commercial tracers for MPI: Synomag-D Plain, Synomag-D NH2, Synomag-D PEG, Perimag, Vivotrax, and Vivotrax Plus. Repeated measurements of samples showed considerable variability while inter-sample differences were generally negligible. Sensitivity between the two modes is strongly correlated while resolution of the two modes was only moderately correlated. Further, relaxometric measurements tend to predict better resolution than is achieved in 2D imaging. All evaluated tracers have resolutions within 1 mm of each other on the MOMENTUM imager. These results illustrate that relaxometer measurements can be used to broadly predict MPI performance but do not accurately recreate the physical processes or differences in hardware and software of MPI. This study provides MPI measurements of tracers that may be useful to researchers while highlighting the challenges of making comparisons between tracers due to variation within samples and across different measurement techniques and instruments.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"620 ","pages":"Article 172889"},"PeriodicalIF":2.5,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonvolatile electrical control of magnetism of monolayer C2N via carrier doping in a two dimensional heterostructure
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-15 DOI: 10.1016/j.jmmm.2025.172857
Changwei Wu, Yun Xie, Weiping Gong
Nonvolatile electrical control of magnetism in two-dimensional (2D) van der Walls heterostructure has sparked significant interest for both understanding the fundamental magnetoelectric physics and device application. Here, using the first-principles calculations, we propose a new multiferroic van der Waals (vdW) heterostructure C2N/In2Se3 based on C2N and ferroelectric (FE) In2Se3 relying on no-transition metals. Upon electron doping, C2N/In2Se3-P maintains nonmagnetic nature, but C2N/In2Se3-P changes into ferromagnetic state. Moreover, the magnetoelectric coupling is enhanced via engineering interlayer distance of C2N/In2Se3. The magnetic moment of C2N/In2Se3-P reaches 1.0 μB/e over the electron concentration ranging from 0.1 to 0.4 e per unit cell at an interlayer distance of 3.2 Å. Our results broaden the materials design space for 2D multiferroic materials.
{"title":"Nonvolatile electrical control of magnetism of monolayer C2N via carrier doping in a two dimensional heterostructure","authors":"Changwei Wu,&nbsp;Yun Xie,&nbsp;Weiping Gong","doi":"10.1016/j.jmmm.2025.172857","DOIUrl":"10.1016/j.jmmm.2025.172857","url":null,"abstract":"<div><div>Nonvolatile electrical control of magnetism in two-dimensional (2D) van der Walls heterostructure has sparked significant interest for both understanding the fundamental magnetoelectric physics and device application. Here, using the first-principles calculations, we propose a new multiferroic van der Waals (vdW) heterostructure <span><math><mrow><msub><mrow><mi>C</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>N</mi></mrow></math></span>/<span><math><mrow><msub><mrow><mi>In</mi></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mi>Se</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span> based on C<sub>2</sub>N and ferroelectric (FE) In<sub>2</sub>Se<sub>3</sub> relying on no-transition metals. Upon electron doping, <span><math><mrow><msub><mrow><mi>C</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>N</mi></mrow></math></span>/<span><math><mrow><msub><mrow><mi>In</mi></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mi>Se</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>-<span><math><mrow><mi>P</mi><mi>↓</mi></mrow></math></span> maintains nonmagnetic nature, but <span><math><mrow><msub><mrow><mi>C</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>N</mi></mrow></math></span>/<span><math><mrow><msub><mrow><mi>In</mi></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mi>Se</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>-<span><math><mrow><mi>P</mi><mi>↑</mi></mrow></math></span> changes into ferromagnetic state. Moreover, the magnetoelectric coupling is enhanced via engineering interlayer distance of <span><math><mrow><msub><mrow><mi>C</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>N</mi></mrow></math></span>/<span><math><mrow><msub><mrow><mi>In</mi></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mi>Se</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>. The magnetic moment of <span><math><mrow><msub><mrow><mi>C</mi></mrow><mrow><mn>2</mn></mrow></msub><mi>N</mi></mrow></math></span>/<span><math><mrow><msub><mrow><mi>In</mi></mrow><mrow><mn>2</mn></mrow></msub><msub><mrow><mi>Se</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>-<span><math><mrow><mi>P</mi><mi>↑</mi></mrow></math></span> reaches 1.0 <span><math><msub><mrow><mi>μ</mi></mrow><mrow><mi>B</mi></mrow></msub></math></span>/e over the electron concentration ranging from 0.1 to 0.4 e per unit cell at an interlayer distance of 3.2 Å. Our results broaden the materials design space for 2D multiferroic materials.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172857"},"PeriodicalIF":2.5,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Realizing new Janus 2D spintronic materials from the non-magnetic 1T-PdSO monolayer through vacancy defects and doping
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-15 DOI: 10.1016/j.jmmm.2025.172848
Lahcen Aznague , Moussa Kibbou , Zakaryae Haman , El-m’feddal Adadi , Ismail Essaoudi , Abdelmajid Ainane
Two-dimensional Janus materials are highly promising for spintronic applications due to their asymmetric structures and tunable properties. This study explores the magnetic properties of the PdSO monolayer induced by dopant elements, using first-principles calculations. The pristine monolayer is a semiconductor with an indirect band gap of 0.90 eV (PBE) and 1.78 eV (HSE06). Pd-vacancies induce half-metallicity and a magnetic moment of 4.00 μB, while O and S-vacancies reduce the band gap without inducing magnetism. Transition metal doping (V, Cr, Mn, Fe) and non-metal doping (B, C, N, F) significantly alter magnetic properties. Mn-doping creates a diluted magnetic semiconductor, while V, Cr, and Fe-doping results in half-metallicity. Non-metal dopants like B, N, and F induce magnetization, while C-doping leads to a non-magnetic semiconductor state. These results highlight effective strategies for magnetizing PdSO monolayers for spintronic applications.
{"title":"Realizing new Janus 2D spintronic materials from the non-magnetic 1T-PdSO monolayer through vacancy defects and doping","authors":"Lahcen Aznague ,&nbsp;Moussa Kibbou ,&nbsp;Zakaryae Haman ,&nbsp;El-m’feddal Adadi ,&nbsp;Ismail Essaoudi ,&nbsp;Abdelmajid Ainane","doi":"10.1016/j.jmmm.2025.172848","DOIUrl":"10.1016/j.jmmm.2025.172848","url":null,"abstract":"<div><div>Two-dimensional Janus materials are highly promising for spintronic applications due to their asymmetric structures and tunable properties. This study explores the magnetic properties of the PdSO monolayer induced by dopant elements, using first-principles calculations. The pristine monolayer is a semiconductor with an indirect band gap of 0.90 eV (PBE) and 1.78 eV (HSE06). Pd-vacancies induce half-metallicity and a magnetic moment of 4.00 <span><math><msub><mrow><mi>μ</mi></mrow><mrow><mi>B</mi></mrow></msub></math></span>, while O and S-vacancies reduce the band gap without inducing magnetism. Transition metal doping (V, Cr, Mn, Fe) and non-metal doping (B, C, N, F) significantly alter magnetic properties. Mn-doping creates a diluted magnetic semiconductor, while V, Cr, and Fe-doping results in half-metallicity. Non-metal dopants like B, N, and F induce magnetization, while C-doping leads to a non-magnetic semiconductor state. These results highlight effective strategies for magnetizing PdSO monolayers for spintronic applications.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172848"},"PeriodicalIF":2.5,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NdFeB coercivity enhancement and temperature coefficient reduction by Pr-Dy-Co diffusion
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-15 DOI: 10.1016/j.jmmm.2025.172856
Kehan Ren , Qing Li , Shuai Cao , Xiangming Lu , Jiateng Zhang , Shengzhi Dong , Shuai Guo , Renjie Chen , Aru Yan
Grain boundary diffusion is utilized to enhance magnetic properties by modulating the organizational structure of the magnet surface layer and optimizing the grain boundary structure. In this study, diffusion sources of PrxDy58-xCo42 (x = 0, 15, 30, 45, and 58 at%) alloys were designed to increase the coercivity while reducing the Dy consumption. The results indicate that when the Pr content in the diffusion source reached 45 %, coercivity increased significantly from 13.87 kOe to 21.76 kOe. In addition, the thermal stability and Curie temperature of the magnet were improved considerably. The increase in Pr content also led to a significant increase in the grain boundary phases of the diffused magnets. This is attributed to the introduction of Pr, which facilitates the formation of grain boundary phases and enhances demagnetization coupling between the main phases. The Pr45Dy13Co42 alloy investigated in this study provides novel insights into the potential design of diffusion sources.
{"title":"NdFeB coercivity enhancement and temperature coefficient reduction by Pr-Dy-Co diffusion","authors":"Kehan Ren ,&nbsp;Qing Li ,&nbsp;Shuai Cao ,&nbsp;Xiangming Lu ,&nbsp;Jiateng Zhang ,&nbsp;Shengzhi Dong ,&nbsp;Shuai Guo ,&nbsp;Renjie Chen ,&nbsp;Aru Yan","doi":"10.1016/j.jmmm.2025.172856","DOIUrl":"10.1016/j.jmmm.2025.172856","url":null,"abstract":"<div><div>Grain boundary diffusion is utilized to enhance magnetic properties by modulating the organizational structure of the magnet surface layer and optimizing the grain boundary structure. In this study, diffusion sources of Pr<em><sub>x</sub></em>Dy<sub>58-</sub><em><sub>x</sub></em>Co<sub>42</sub> (<em>x</em> = 0, 15, 30, 45, and 58 at%) alloys were designed to increase the coercivity while reducing the Dy consumption. The results indicate that when the Pr content in the diffusion source reached 45 %, coercivity increased significantly from 13.87 kOe to 21.76 kOe. In addition, the thermal stability and Curie temperature of the magnet were improved considerably. The increase in Pr content also led to a significant increase in the grain boundary phases of the diffused magnets. This is attributed to the introduction of Pr, which facilitates the formation of grain boundary phases and enhances demagnetization coupling between the main phases. The Pr<sub>45</sub>Dy<sub>13</sub>Co<sub>42</sub> alloy investigated in this study provides novel insights into the potential design of diffusion sources.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172856"},"PeriodicalIF":2.5,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143445945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coherent manipulation of the surface plasmon resonance sensing at the dielectric-graphene interface under Cross-Kerr nonlinearity effect
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-14 DOI: 10.1016/j.jmmm.2025.172858
Qaisar Khan , Mostafa R. Abukhadra , Ahmed M. El-Sherbeeny , Jeong Ryeol Choi , Asghar Ali , Majid Khan
Sensitivity of surface plasmon polaritons (SPPs) resonance sensing is coherently controlled and modified at the dielectric medium and graphene interface under the cross Kerr nonlinear fluctuation of the dielectric function. The useful control over the sensitivity of the SPPs by control and Kerr fields is reported. The angular interrogation of sensitivity of the SPPs under the Kerr nonlinearity effect is written as dθ/dndk. The sensitivity of the SPPs depends on the driving fields parameters such as control and probe fields detuning and control field Rabi frequency as well as decay rate. The sensitivity is a function of probe field detuning, the maximum value of sensitivity of the SPPs is reported to be 3000 deg/RIU with probe field detuning. Whereas the minimum sensitivity is investigated to be 400 deg/RIU with probe fields detunings. The reported results in this manuscript is useful applications in data storage, solar cell, sensor devices and plasmonster technology.
{"title":"Coherent manipulation of the surface plasmon resonance sensing at the dielectric-graphene interface under Cross-Kerr nonlinearity effect","authors":"Qaisar Khan ,&nbsp;Mostafa R. Abukhadra ,&nbsp;Ahmed M. El-Sherbeeny ,&nbsp;Jeong Ryeol Choi ,&nbsp;Asghar Ali ,&nbsp;Majid Khan","doi":"10.1016/j.jmmm.2025.172858","DOIUrl":"10.1016/j.jmmm.2025.172858","url":null,"abstract":"<div><div>Sensitivity of surface plasmon polaritons (SPPs) resonance sensing is coherently controlled and modified at the dielectric medium and graphene interface under the cross Kerr nonlinear fluctuation of the dielectric function. The useful control over the sensitivity of the SPPs by control and Kerr fields is reported. The angular interrogation of sensitivity of the SPPs under the Kerr nonlinearity effect is written as <span><math><mrow><mi>d</mi><mi>θ</mi><mo>/</mo><mi>d</mi><msubsup><mrow><mi>n</mi></mrow><mrow><mi>d</mi></mrow><mrow><mi>k</mi></mrow></msubsup></mrow></math></span>. The sensitivity of the SPPs depends on the driving fields parameters such as control and probe fields detuning and control field Rabi frequency as well as decay rate. The sensitivity is a function of probe field detuning, the maximum value of sensitivity of the SPPs is reported to be 3000 deg/RIU with probe field detuning. Whereas the minimum sensitivity is investigated to be 400 deg/RIU with probe fields detunings. The reported results in this manuscript is useful applications in data storage, solar cell, sensor devices and plasmonster technology.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172858"},"PeriodicalIF":2.5,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143419333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Canted magnetism and topological spin texture induced in silicon from flexoelectronic proximity effect
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-14 DOI: 10.1016/j.jmmm.2025.172886
Ravindra G. Bhardwaj , Anand Katailiha , Paul C. Lou , W.P. Beyermann , Sandeep Kumar
The flexoelectronic effect leads to charge carrier transfer between two dissimilar materials, a combination of metal and doped semiconductor, when they are brought into contact under an applied strain gradient. The flexoelectronic effect may lead to continuity of electronic wavefunction and order parameter across the interface, which is called as flexoelectronic proximity effect. This study experimentally demonstrates flexoelectronic proximity effect induced canted magnetic moment in the doped p-Si thin film from ferromagnetic permalloy thin film, which give rise to RKKY interlayer exchange interaction between permalloy and p-Si layers. The canted magnetic moment manifests topological spin-Seebeck effect response in magneto-thermoelectric measurements. The topological spin-Seebeck effect is likely to arise due to inverse spin-Hall effect from topological spin texture; possibly a three-dimensional analogue of the hexagonally warped helical spin texture. This work demonstrates that thermal modulation of strain gradient can be used to tune RKKY interlayer exchange interaction between Py and p-Si from ferromagnetic to antiferromagnetic as well as magnitude of the canted magnetic moment. The canted magnetic moment and topological spin texture behavior can also be controlled by varying the thickness of the p-Si layer. The flexoelectronic proximity effect and topological spin texture can enable Si based spin, magnetic, topological and quantum applications.
{"title":"Canted magnetism and topological spin texture induced in silicon from flexoelectronic proximity effect","authors":"Ravindra G. Bhardwaj ,&nbsp;Anand Katailiha ,&nbsp;Paul C. Lou ,&nbsp;W.P. Beyermann ,&nbsp;Sandeep Kumar","doi":"10.1016/j.jmmm.2025.172886","DOIUrl":"10.1016/j.jmmm.2025.172886","url":null,"abstract":"<div><div>The flexoelectronic effect leads to charge carrier transfer between two dissimilar materials, a combination of metal and doped semiconductor, when they are brought into contact under an applied strain gradient. The flexoelectronic effect may lead to continuity of electronic wavefunction and order parameter across the interface, which is called as flexoelectronic proximity effect. This study experimentally demonstrates flexoelectronic proximity effect induced canted magnetic moment in the doped p-Si thin film from ferromagnetic permalloy thin film, which give rise to RKKY interlayer exchange interaction between permalloy and p-Si layers. The canted magnetic moment manifests topological spin-Seebeck effect response in magneto-thermoelectric measurements. The topological spin-Seebeck effect is likely to arise due to inverse spin-Hall effect from topological spin texture; possibly a three-dimensional analogue of the hexagonally warped helical spin texture. This work demonstrates that thermal modulation of strain gradient can be used to tune RKKY interlayer exchange interaction between Py and p-Si from ferromagnetic to antiferromagnetic as well as magnitude of the canted magnetic moment. The canted magnetic moment and topological spin texture behavior can also be controlled by varying the thickness of the p-Si layer. The flexoelectronic proximity effect and topological spin texture can enable Si based spin, magnetic, topological and quantum applications.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172886"},"PeriodicalIF":2.5,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the phase composition, structural and magnetic properties of M−type hexaferrites produced by self-propagation high-temperature synthesis
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-14 DOI: 10.1016/j.jmmm.2025.172887
Dmitry V. Wagner , Katerina V. Kareva , Viktor A. Zhuravlev , Tatiana A. Bugrova , Aleksandr I. Tsimmerman , Roman V. Minin
In this work, BaFe12O19 hexaferrites were synthesized by self-propagating high-temperature synthesis (SHS). The ferritization temperature of SHS products has a significant effect on the content of the target M−type phase of hexaferrites. Magnetic hysteresis loops in pulsed magnetic fields up to 26 kOe were studied. It was shown that with an increase in the ferritization temperature of hexaferrites from 1000 °C to 1200 °C, the values of the coercive force and specific saturation magnetization increase due to an increase in the M−phase content and crystallite growth. The magnetization curves for hexaferrites with a high content of the M−phase were calculated. The contribution of the paraprocess to the magnitude of the specific saturation magnetization was determined. The fields of magnetocrystalline anisotropy, the values of the effective gyromagnetic ratio and the damping factors in the Landau-Lifshitz-Gilbert equation were determined by the ferromagnetic resonance method.
{"title":"Study of the phase composition, structural and magnetic properties of M−type hexaferrites produced by self-propagation high-temperature synthesis","authors":"Dmitry V. Wagner ,&nbsp;Katerina V. Kareva ,&nbsp;Viktor A. Zhuravlev ,&nbsp;Tatiana A. Bugrova ,&nbsp;Aleksandr I. Tsimmerman ,&nbsp;Roman V. Minin","doi":"10.1016/j.jmmm.2025.172887","DOIUrl":"10.1016/j.jmmm.2025.172887","url":null,"abstract":"<div><div>In this work, BaFe<sub>12</sub>O<sub>19</sub> hexaferrites were synthesized by self-propagating high-temperature synthesis (SHS). The ferritization temperature of SHS products has a significant effect on the content of the target M−type phase of hexaferrites. Magnetic hysteresis loops in pulsed magnetic fields up to 26 kOe were studied. It was shown that with an increase in the ferritization temperature of hexaferrites from 1000 °C to 1200 °C, the values of the coercive force and specific saturation magnetization increase due to an increase in the M−phase content and crystallite growth. The magnetization curves for hexaferrites with a high content of the M−phase were calculated. The contribution of the paraprocess to the magnitude of the specific saturation magnetization was determined. The fields of magnetocrystalline anisotropy, the values of the effective gyromagnetic ratio and the damping factors in the Landau-Lifshitz-Gilbert equation were determined by the ferromagnetic resonance method.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172887"},"PeriodicalIF":2.5,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143429227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and magnetic properties of stable hexagonal TmFeO3 ceramics with In doping 掺杂 In 的稳定六方 TmFeO3 陶瓷的结构和磁特性
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-13 DOI: 10.1016/j.jmmm.2025.172877
Shaoxing Sun , Zehua Zhang , Haoyu Jia , Limin Zheng , Changcai Chen , Xiaohua Luo , Chunsheng Fang , Shengcan Ma
Hexagonal rare-earth ferrites (h-RFeO3) is a promising multiferroic materials with strong magnetoelectric coupling effect by tuning the collective tilt of FeO5 trigonal bipyramids. However, the metastable hexagonal structure for RFeO3 bulk materials is still pain point that needs to be solved. In this work, multiferroic h-RFeO3 ceramic materials were designed and prepared by doping TmFeO3 ceramics with In, which were fabricated by using the standard solid-state sintering method. Stable h-Tm1−xInxFeO3 (x = 0.6, 0.7) ceramics crystallized into a pure hexagonal structure with the polar space group P63cm (x = 0.6) and the non-polar space group P63/mmc (x = 0.7) at room temperature. Two magnetic transitions were identified in the ceramic samples, a paramagnetic to antiferromagnetic transition (TN), and spin reorientation transition (TSR). The dielectric anomalies were observed around the spin reorientation temperature (TSR), which indicates significant magnetoelectric coupling effects in the h-Tm1−xInxFeO3 (x = 0.6, 0.7) ceramics. Furthermore, using dielectric and pyroelectric characterization techniques, dielectric peaks were observed near 280 K for the x  = 0.6 sample, which should be a weak structural transition through the analysis of XRD patterns at various temperatures. The presence of stable hexagonal structure for In-doping TmFeO3 is enlightening the multiferroic materials in hexagonal ferrites.
{"title":"Structural and magnetic properties of stable hexagonal TmFeO3 ceramics with In doping","authors":"Shaoxing Sun ,&nbsp;Zehua Zhang ,&nbsp;Haoyu Jia ,&nbsp;Limin Zheng ,&nbsp;Changcai Chen ,&nbsp;Xiaohua Luo ,&nbsp;Chunsheng Fang ,&nbsp;Shengcan Ma","doi":"10.1016/j.jmmm.2025.172877","DOIUrl":"10.1016/j.jmmm.2025.172877","url":null,"abstract":"<div><div>Hexagonal rare-earth ferrites (<em>h</em>-RFeO<sub>3</sub>) is a promising multiferroic materials with strong magnetoelectric coupling effect by tuning the collective tilt of FeO<sub>5</sub> trigonal bipyramids. However, the metastable hexagonal structure for RFeO<sub>3</sub> bulk materials is still pain point that needs to be solved. In this work, multiferroic <em>h</em>-RFeO<sub>3</sub> ceramic materials were designed and prepared by doping TmFeO<sub>3</sub> ceramics with In, which were fabricated by using the standard solid-state sintering method. Stable <em>h</em>-Tm<sub>1−</sub><em><sub>x</sub></em>In<em><sub>x</sub></em>FeO<sub>3</sub> (<em>x</em> = 0.6, 0.7) ceramics crystallized into a pure hexagonal structure with the polar space group <em>P6<sub>3</sub>cm</em> (<em>x</em> = 0.6) and the non-polar space group <em>P6<sub>3</sub>/mmc</em> (<em>x</em> = 0.7) at room temperature. Two magnetic transitions were identified in the ceramic samples, a paramagnetic to antiferromagnetic transition (<em>T</em><sub>N</sub>), and spin reorientation transition (<em>T</em><sub>SR</sub>). The dielectric anomalies were observed around the spin reorientation temperature (<em>T</em><sub>SR</sub>), which indicates significant magnetoelectric coupling effects in the <em>h</em>-Tm<sub>1−</sub><em><sub>x</sub></em>In<em><sub>x</sub></em>FeO<sub>3</sub> (<em>x</em> = 0.6, 0.7) ceramics. Furthermore, using dielectric and pyroelectric characterization techniques, dielectric peaks were observed near 280 K for the <em>x</em>  = 0.6 sample, which should be a weak structural transition through the analysis of XRD patterns at various temperatures. The presence of stable hexagonal structure for In-doping TmFeO<sub>3</sub> is enlightening the multiferroic materials in hexagonal ferrites.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172877"},"PeriodicalIF":2.5,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143418972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field-Free switching of Antiferromagnetically Coupled Co/Pd-Based perpendicular multi-layer via combined spin torques
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-12 DOI: 10.1016/j.jmmm.2025.172872
Da Pan , Ryota Yabushita , Daiki Oshima , Takeshi Kato
Spin-transfer torque combined with spin–orbit torque switching is considered a highly promising writing mechanism for advancing large storage density magnetic random-access memory with perpendicular magnetic anisotropy, due to its capability for field-free operation. Meantime, synthetic antiferromagnet has also gathered significant attention owing to its advantage in enhancing thermal stability while keeping the switching current low, which is crucial for achieving high-capacity MRAM. We manufactured Giant Magnetoresistance (GMR) devices utilizing a synthetic antiferromagnetic (SAF) free layer, and found that the SOT switching was assisted by STT even in SAF free layer, which has not been reported, and that the effect of STT assisting was significantly different from that for ferromagnetic free layer.
{"title":"Field-Free switching of Antiferromagnetically Coupled Co/Pd-Based perpendicular multi-layer via combined spin torques","authors":"Da Pan ,&nbsp;Ryota Yabushita ,&nbsp;Daiki Oshima ,&nbsp;Takeshi Kato","doi":"10.1016/j.jmmm.2025.172872","DOIUrl":"10.1016/j.jmmm.2025.172872","url":null,"abstract":"<div><div>Spin-transfer torque combined with spin–orbit torque switching is considered a highly promising writing mechanism for advancing large storage density magnetic random-access memory with perpendicular magnetic anisotropy, due to its capability for field-free operation. Meantime, synthetic antiferromagnet has also gathered significant attention owing to its advantage in enhancing thermal stability while keeping the switching current low, which is crucial for achieving high-capacity MRAM. We manufactured Giant Magnetoresistance (GMR) devices utilizing a synthetic antiferromagnetic (SAF) free layer, and found that the SOT switching was assisted by STT even in SAF free layer, which has not been reported, and that the effect of STT assisting was significantly different from that for ferromagnetic free layer.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172872"},"PeriodicalIF":2.5,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143402786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A magneto-mechanical coupling constitutive model for self-magnetic flux leakage stress detection in ferromagnetic materials
IF 2.5 3区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-12 DOI: 10.1016/j.jmmm.2025.172874
Shaoxi Zeng, Hongmei Li, Chuntian Zhao
The initial magnetization state, magnetization history, stress loading history, and material type of ferromagnetic materials have significant effects on the self-magnetic flux leakage (SMFL) stress detection, which therefore needs to be clarified, and the key to clarifying these effects is to establish the magneto-mechanical coupling constitutive model accurately. Thus, mathematical descriptions of magneto-mechanical coupling are constructed, by combining the basic magnetization characteristics and hysteresis properties of ferromagnetic materials. The accuracy and validity of such fundamental theories are verified by experimental examples, allowing for an extended analysis of the working conditions. The results show that the proposed model is well suited to complex cross-coupling conditions of applied magnetic field H (involving constant excitation magnetic intensity H0) and tensile stress σt (involving cyclic loading and unloading), predicting the stress-induced magnetization behaviour and its variation law in ferromagnetic materials effectively. The study here can further serve as an important theoretical basis for the work on numerical analog analysis, guiding the quantitative analysis of SMFL stress detection of ferromagnetic materials on the theoretical level.
{"title":"A magneto-mechanical coupling constitutive model for self-magnetic flux leakage stress detection in ferromagnetic materials","authors":"Shaoxi Zeng,&nbsp;Hongmei Li,&nbsp;Chuntian Zhao","doi":"10.1016/j.jmmm.2025.172874","DOIUrl":"10.1016/j.jmmm.2025.172874","url":null,"abstract":"<div><div>The initial magnetization state, magnetization history, stress loading history, and material type of ferromagnetic materials have significant effects on the self-magnetic flux leakage (SMFL) stress detection, which therefore needs to be clarified, and the key to clarifying these effects is to establish the magneto-mechanical coupling constitutive model accurately. Thus, mathematical descriptions of magneto-mechanical coupling are constructed, by combining the basic magnetization characteristics and hysteresis properties of ferromagnetic materials. The accuracy and validity of such fundamental theories are verified by experimental examples, allowing for an extended analysis of the working conditions. The results show that the proposed model is well suited to complex cross-coupling conditions of applied magnetic field <em>H</em> (involving constant excitation magnetic intensity <em>H</em><sub>0</sub>) and tensile stress <em>σ</em><sub>t</sub> (involving cyclic loading and unloading), predicting the stress-induced magnetization behaviour and its variation law in ferromagnetic materials effectively. The study here can further serve as an important theoretical basis for the work on numerical analog analysis, guiding the quantitative analysis of SMFL stress detection of ferromagnetic materials on the theoretical level.</div></div>","PeriodicalId":366,"journal":{"name":"Journal of Magnetism and Magnetic Materials","volume":"618 ","pages":"Article 172874"},"PeriodicalIF":2.5,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143418973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Magnetism and Magnetic Materials
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