Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00062
E. Kuwata, Yashar Alimohammadi, Xuan Liu, J. Bell, P. Tasker, S. Shinjo, J. Benedikt
This paper reports on new multitone active loadpull measurements at the specific frequencies of third order intermodulation distortions (IMD3). The achieved separation between the effects of fundamental and IMD3 loadpull quantify clearly the potential of incorporating IMD3 load impedances into low distortion high efficiency amplifier design. The results show an increase in drain efficiency (DE) of 11 points and 13dB drop in IMD3 levels by varying the IMD3 impedances only. The results demonstrate the same IMD3 optimum impedances for achieving both maximum DE and linearity yet significantly different from impedances for optimum DE at fundamental frequencies, hence strongly suggesting the separate tuning of IMD3 impedances for improving amplifier's DE and linearity. This is the first investigation of loadpull at specific IMD3 tones covering the entire smith chart at realistic frequency spacing and compression levels.
{"title":"Effects of Load Impedances at Third Order Intermodulation Tones","authors":"E. Kuwata, Yashar Alimohammadi, Xuan Liu, J. Bell, P. Tasker, S. Shinjo, J. Benedikt","doi":"10.1109/EuMIC48047.2021.00062","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00062","url":null,"abstract":"This paper reports on new multitone active loadpull measurements at the specific frequencies of third order intermodulation distortions (IMD3). The achieved separation between the effects of fundamental and IMD3 loadpull quantify clearly the potential of incorporating IMD3 load impedances into low distortion high efficiency amplifier design. The results show an increase in drain efficiency (DE) of 11 points and 13dB drop in IMD3 levels by varying the IMD3 impedances only. The results demonstrate the same IMD3 optimum impedances for achieving both maximum DE and linearity yet significantly different from impedances for optimum DE at fundamental frequencies, hence strongly suggesting the separate tuning of IMD3 impedances for improving amplifier's DE and linearity. This is the first investigation of loadpull at specific IMD3 tones covering the entire smith chart at realistic frequency spacing and compression levels.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121373540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00081
M. Alim, A. Rezazadeh, C. Gaquière
A detailed study about the shifting of third-order notch and threshold voltage with temperature for GaN and GaAs FETs were analyzed. For this purpose, a great deal of data over temperature between - 40 to 150°C were measured by using two-tone intermodulation distortion set up. It was found that the third order notch current point exactly follows the trends of threshold voltage (VT) shifting with temperature. The thermal response of VTdemonstrates a raising trend in GaN and a falling trend in GaAs FETs. An analytical model for notch current was developed and well validated with the measured data. This study represents some significant and thorough understanding to investigate the device behaviour.
{"title":"Third Order Notch over Multi-bias and Temperature in GaN and GaAs HEMTs","authors":"M. Alim, A. Rezazadeh, C. Gaquière","doi":"10.1109/EuMIC48047.2021.00081","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00081","url":null,"abstract":"A detailed study about the shifting of third-order notch and threshold voltage with temperature for GaN and GaAs FETs were analyzed. For this purpose, a great deal of data over temperature between - 40 to 150°C were measured by using two-tone intermodulation distortion set up. It was found that the third order notch current point exactly follows the trends of threshold voltage (VT) shifting with temperature. The thermal response of VTdemonstrates a raising trend in GaN and a falling trend in GaAs FETs. An analytical model for notch current was developed and well validated with the measured data. This study represents some significant and thorough understanding to investigate the device behaviour.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126583066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00017
G. van der Bent, A. P. de Hek, F. V. van Vliet, Z. Ouarch
A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational frequency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.
{"title":"Single-Chip 100-Watt S-band Power Amplifier in 0.25 μm GaN HEMT MMIC Technology","authors":"G. van der Bent, A. P. de Hek, F. V. van Vliet, Z. Ouarch","doi":"10.1109/EuMIC48047.2021.00017","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00017","url":null,"abstract":"A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational frequency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"89 5-6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132364789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00024
Fatemeh Aghlmand, Saransh Sharma, A. Emami
This paper presents a fully integrated high-bandwidth receiver for RF-over-free-space optics (RoFSO). Using subcarrier intensity modulation (SIM) and direct detection scheme, high data rate optical communication is supported in a high-loss atmospheric channel. For proof-of-concept demonstration, an 8Gbps input data via differential phase shift keying (DPSK) modulation and with 10GHz of RF bandwidth is employed. The link performance is assessed by exposing the system to more than 26dB of optical loss equivalent to 3.5km of free space distance under moderate visibility conditions. The receiver chip uses adaptive control loops to compensate for the atmospheric effects and extends the dynamic range. It has been designed and implemented in 28nm CMOS process and achieves 58dB of gain and 18GHz of bandwidth.
{"title":"An 8Gbps Adaptive Receiver for RF over FSO in 28nm CMOS","authors":"Fatemeh Aghlmand, Saransh Sharma, A. Emami","doi":"10.1109/EuMIC48047.2021.00024","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00024","url":null,"abstract":"This paper presents a fully integrated high-bandwidth receiver for RF-over-free-space optics (RoFSO). Using subcarrier intensity modulation (SIM) and direct detection scheme, high data rate optical communication is supported in a high-loss atmospheric channel. For proof-of-concept demonstration, an 8Gbps input data via differential phase shift keying (DPSK) modulation and with 10GHz of RF bandwidth is employed. The link performance is assessed by exposing the system to more than 26dB of optical loss equivalent to 3.5km of free space distance under moderate visibility conditions. The receiver chip uses adaptive control loops to compensate for the atmospheric effects and extends the dynamic range. It has been designed and implemented in 28nm CMOS process and achieves 58dB of gain and 18GHz of bandwidth.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124807769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00068
R. Giofré, P. Colantonio, M. Auf der Maur, A. Reale
This paper describes the activities carried out to assess the thermal behavior of a Gallium Nitride (GaN) power bar grown on Silicon Carbide (SiC) substrate. The aim is to set up a reliable approach to extract an accurate value of the device thermal resistance (Rth), under different base-plate temperatures and dissipated power values. To this purpose, both Raman spectroscopy (RS) and photo-current (PC) techniques were experimentally applied to verify the results obtained from simulations based on finite element analysis. Such activity was carried out in the framework of a project aiming to develop a Solid State Power Amplifier (SSPA) for space applications, where thermal management is of primary importance. Even if with some differences, the comparisons between measured and simulated values have confirmed that both RS and PC techniques can be applied to experimentally verify the simulation's assumptions.
{"title":"A Suitable Approach to Assess Thermal Properties of GaN Power Bars","authors":"R. Giofré, P. Colantonio, M. Auf der Maur, A. Reale","doi":"10.1109/EuMIC48047.2021.00068","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00068","url":null,"abstract":"This paper describes the activities carried out to assess the thermal behavior of a Gallium Nitride (GaN) power bar grown on Silicon Carbide (SiC) substrate. The aim is to set up a reliable approach to extract an accurate value of the device thermal resistance (Rth), under different base-plate temperatures and dissipated power values. To this purpose, both Raman spectroscopy (RS) and photo-current (PC) techniques were experimentally applied to verify the results obtained from simulations based on finite element analysis. Such activity was carried out in the framework of a project aiming to develop a Solid State Power Amplifier (SSPA) for space applications, where thermal management is of primary importance. Even if with some differences, the comparisons between measured and simulated values have confirmed that both RS and PC techniques can be applied to experimentally verify the simulation's assumptions.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124742756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00055
C. Wilson, M. Schmidt-Szalowski, J. King
This paper introduces a simple and accurate approach to extracting an energy and charge conservative model for the displacement current in a field-effect transistor (FET). Through careful fitting of the device transconductance time-delay parameter, a symmetric capacitance matrix is obtained that may be used directly to extract a single energy function in the form of an artificial neural network (ANN). Results show excellent capacitance fits across the full bias plane along with high-fidelity S-parameter fits at multiple bias points.
{"title":"Energy and Charge Conservation for FET Models","authors":"C. Wilson, M. Schmidt-Szalowski, J. King","doi":"10.1109/EuMIC48047.2021.00055","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00055","url":null,"abstract":"This paper introduces a simple and accurate approach to extracting an energy and charge conservative model for the displacement current in a field-effect transistor (FET). Through careful fitting of the device transconductance time-delay parameter, a symmetric capacitance matrix is obtained that may be used directly to extract a single energy function in the form of an artificial neural network (ANN). Results show excellent capacitance fits across the full bias plane along with high-fidelity S-parameter fits at multiple bias points.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121567955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00073
A. Gatzastras, H. Massler, A. Leuther, S. Chartier, I. Kallfass
This paper presents a three stage gain cell topology formed by a common gate, common source, common gate DC-decoupled configuration with conjugate complex interstage matching. The common gate (CG) cell at the input is selected in order to achieve an active ultra-wideband matching in an 50 Ω enviroment in H-Band. This amplifier, fabricated in a 35 nm InGaAs-based metamorphic high electron mobility transistor (mHEMT) technology, is designed with a center frequency of 290 GHz and cell achieves an ultra-wideband input matching of 67GHz below −10 dB. The cell reaches a small-signal gain of 9.8 dB and a 3 dB-bandwidth of 16 GHz with an simulated OP1dBof 5.3 dBm and is realized as a millimeter-wave monolithic integrated circuit and is characterized by on-wafer measurements.
{"title":"A Three Stage Gain Cell Topology with an Active Ultra-Wideband Input Matching in H-Band","authors":"A. Gatzastras, H. Massler, A. Leuther, S. Chartier, I. Kallfass","doi":"10.1109/EuMIC48047.2021.00073","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00073","url":null,"abstract":"This paper presents a three stage gain cell topology formed by a common gate, common source, common gate DC-decoupled configuration with conjugate complex interstage matching. The common gate (CG) cell at the input is selected in order to achieve an active ultra-wideband matching in an 50 Ω enviroment in H-Band. This amplifier, fabricated in a 35 nm InGaAs-based metamorphic high electron mobility transistor (mHEMT) technology, is designed with a center frequency of 290 GHz and cell achieves an ultra-wideband input matching of 67GHz below −10 dB. The cell reaches a small-signal gain of 9.8 dB and a 3 dB-bandwidth of 16 GHz with an simulated OP1dBof 5.3 dBm and is realized as a millimeter-wave monolithic integrated circuit and is characterized by on-wafer measurements.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130319383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00056
M. Schmidt-Szalowski, M. Marchetti, G. Avolio
We introduce two experimental methods for estimation of the large-signal output admittance of a power FET. One relies on a local linearization of dependency of the output current on the output voltage. This method is suitable for technology evaluation and model verification. The other one derives the output admittance from the shape of contours of constant output voltage and provides the average value for a given voltage swing. The latter estimator can serve as a target for optimization of output matching networks. As the example of an LDMOS transistor shows, both methods yield consistent results.
{"title":"Estimation of Large-Signal Output Capacitance of a Power Transistor","authors":"M. Schmidt-Szalowski, M. Marchetti, G. Avolio","doi":"10.1109/EuMIC48047.2021.00056","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00056","url":null,"abstract":"We introduce two experimental methods for estimation of the large-signal output admittance of a power FET. One relies on a local linearization of dependency of the output current on the output voltage. This method is suitable for technology evaluation and model verification. The other one derives the output admittance from the shape of contours of constant output voltage and provides the average value for a given voltage swing. The latter estimator can serve as a target for optimization of output matching networks. As the example of an LDMOS transistor shows, both methods yield consistent results.","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115281539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-01-10DOI: 10.1109/EuMIC48047.2021.00049
Bo-Ze Lu, Yunshan Wang, Zhi-Jia Huang, Kun-You Lin, Huei Wang
A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than −25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability
{"title":"A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications","authors":"Bo-Ze Lu, Yunshan Wang, Zhi-Jia Huang, Kun-You Lin, Huei Wang","doi":"10.1109/EuMIC48047.2021.00049","DOIUrl":"https://doi.org/10.1109/EuMIC48047.2021.00049","url":null,"abstract":"A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than −25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability","PeriodicalId":371692,"journal":{"name":"2020 15th European Microwave Integrated Circuits Conference (EuMIC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115850868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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