Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168413
Nedyalko Peshev, V. Tsenev
The article examines and analyzes the results of the research done on the strength of solders of LGA (Land Grid Array) assembly type at different amounts of soldering material and using Hot bar soldering technology. Experiments are described for achieving the maximum tensile strength of soldered pads on a flexible circuit board (FPC) to a standard rigid circuit board (PCB) at different amounts of solder by Hot bar soldering. The method of measuring the amount of solder material is specified and the setup for measuring solder height is described. The soldering system of flexible and rigid board is applied and the studied pads are described. The intelligent breaking force measurement system and validation through MSA (Measurement System Analysis) is also presented. Through a statistical method SPC (Statistical Process Control) a specific analysis was performed and conclusions were generated for the investigated system. A prescription is made for the amount of soldering material at which the maximum breaking strength of the solders is obtained for a particular application. The paper finishes with a conclusion for future work to obtain better results for solder rupture strength.
{"title":"Investigating the Effect of Solder Material Quantity on Obtaining Strong Solder Joints in LGA Type Assembly Using Statistics","authors":"Nedyalko Peshev, V. Tsenev","doi":"10.1109/ISSE57496.2023.10168413","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168413","url":null,"abstract":"The article examines and analyzes the results of the research done on the strength of solders of LGA (Land Grid Array) assembly type at different amounts of soldering material and using Hot bar soldering technology. Experiments are described for achieving the maximum tensile strength of soldered pads on a flexible circuit board (FPC) to a standard rigid circuit board (PCB) at different amounts of solder by Hot bar soldering. The method of measuring the amount of solder material is specified and the setup for measuring solder height is described. The soldering system of flexible and rigid board is applied and the studied pads are described. The intelligent breaking force measurement system and validation through MSA (Measurement System Analysis) is also presented. Through a statistical method SPC (Statistical Process Control) a specific analysis was performed and conclusions were generated for the investigated system. A prescription is made for the amount of soldering material at which the maximum breaking strength of the solders is obtained for a particular application. The paper finishes with a conclusion for future work to obtain better results for solder rupture strength.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"52 34","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113934249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168404
E. Gieva, I. Ruskova
In this paper, a 3D COMSOL model of a silicon wafer that is heated using a laser moving radially across the wafer surface is implemented. By modelling the incident heat flux from the laser as a spatially distributed heat source on the surface, the transient thermal response of the wafer is obtained. The average, maximum, and minimum temperatures, as well as the peak temperature difference across the substrate, are stored at each calculation step. The temperature distribution throughout the pad is stored at a specified number of output time steps. The study included three wafer models of different materials, silicon, germanium and gallium arsenide, and the results were compared and analysed in order to verify the studied characteristics.
{"title":"Investigation and Simulation of the Effect of Laser Heating on Wafers from Different Material","authors":"E. Gieva, I. Ruskova","doi":"10.1109/ISSE57496.2023.10168404","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168404","url":null,"abstract":"In this paper, a 3D COMSOL model of a silicon wafer that is heated using a laser moving radially across the wafer surface is implemented. By modelling the incident heat flux from the laser as a spatially distributed heat source on the surface, the transient thermal response of the wafer is obtained. The average, maximum, and minimum temperatures, as well as the peak temperature difference across the substrate, are stored at each calculation step. The temperature distribution throughout the pad is stored at a specified number of output time steps. The study included three wafer models of different materials, silicon, germanium and gallium arsenide, and the results were compared and analysed in order to verify the studied characteristics.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121436220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168472
I. Radulescu, E. Visileanu, L. Surdu, M. Costea, C. Morari, Michele Setaro, Catalin Constantin, B. Mitu
Shielding of Electromagnetic Interference (EMI) requires new solutions due to the strong development of mobile and wireless communication. Flexible, textile-based EM shields were made possible with the development of spinning technology for manufacturing of fibers and yarns with metallic content and advanced coating technologies of metallic layers (spraying, magnetron plasma, dip-coating). They are used nowadays in numerous applications, both for ensuring EMI shielding of electronic equipment and for preserving human’s health. Our study describes EM shields manufactured of woven fabrics with inserted metallic yarns and metallic plasma coating. The study focuses on the comparative analysis of the Electromagnetic Shielding Effectiveness (EMSE) measurements, based on three standardized methods available in different laboratories across Europe (at UPB2, ICPE-CA3, TecnoLab4). The measurements, that were conducted in the frequency range of 0.1-1000 MHz, indicated 55 dB EMSE at 10 MHz. The comparative analysis shows similar values for the three methods, proving the accuracy of the results.
{"title":"Comparative Shielding Measurements of Flexible Electromagnetic Shields","authors":"I. Radulescu, E. Visileanu, L. Surdu, M. Costea, C. Morari, Michele Setaro, Catalin Constantin, B. Mitu","doi":"10.1109/ISSE57496.2023.10168472","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168472","url":null,"abstract":"Shielding of Electromagnetic Interference (EMI) requires new solutions due to the strong development of mobile and wireless communication. Flexible, textile-based EM shields were made possible with the development of spinning technology for manufacturing of fibers and yarns with metallic content and advanced coating technologies of metallic layers (spraying, magnetron plasma, dip-coating). They are used nowadays in numerous applications, both for ensuring EMI shielding of electronic equipment and for preserving human’s health. Our study describes EM shields manufactured of woven fabrics with inserted metallic yarns and metallic plasma coating. The study focuses on the comparative analysis of the Electromagnetic Shielding Effectiveness (EMSE) measurements, based on three standardized methods available in different laboratories across Europe (at UPB2, ICPE-CA3, TecnoLab4). The measurements, that were conducted in the frequency range of 0.1-1000 MHz, indicated 55 dB EMSE at 10 MHz. The comparative analysis shows similar values for the three methods, proving the accuracy of the results.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127464024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168521
Moritz Hartleb, P. Imrich, J. Zechner, Thomas Walter, G. Khatibi
This work investigates the applicability of the cross-sectional nanoindentation (CSN) method for the adhesion of thick ductile materials such as polyimide layers. $mathrm{ASiO}_{mathrm{x}}/mathrm{A1}/mathrm{Si}_{mathrm{x}}mathrm{N}_{mathrm{y}}$/polyimide stack deposited on a Si substrate was investigated, where the interface between the substrate and the $mathrm{SiO}_{mathrm{x}}$ was intentionally weakened to provoke long and stable crack propagation which alleviates the analysis. This cracking was investigated in an SEM and the opened interface confirmed using EDX analysis. The critical energy release rate ($mathrm{G}_{mathrm{c}}$) was determined via an analytical method and numerically by using finite element analysis (FEA) to compare the effectiveness of the respective methods. FEA further allowed to determine the influence of plasticity in the Al and polyimide layers and the relaxation of the Si-wedge, that is created during the CSN experiment, due to the polyimide layer. To separate the effect of wedge-relaxation and plasticity a mixed evaluation of using analytical methods with values obtained from FEA simulations was also performed. The experimental results show that the analytical method underestimates energy release rate compared to the FEA method, while a mixed approach overestimates the adhesion.
{"title":"Cross-sectional Nanoindentation: Applicability for testing Polyimide adhesion in semiconductor components","authors":"Moritz Hartleb, P. Imrich, J. Zechner, Thomas Walter, G. Khatibi","doi":"10.1109/ISSE57496.2023.10168521","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168521","url":null,"abstract":"This work investigates the applicability of the cross-sectional nanoindentation (CSN) method for the adhesion of thick ductile materials such as polyimide layers. $mathrm{ASiO}_{mathrm{x}}/mathrm{A1}/mathrm{Si}_{mathrm{x}}mathrm{N}_{mathrm{y}}$/polyimide stack deposited on a Si substrate was investigated, where the interface between the substrate and the $mathrm{SiO}_{mathrm{x}}$ was intentionally weakened to provoke long and stable crack propagation which alleviates the analysis. This cracking was investigated in an SEM and the opened interface confirmed using EDX analysis. The critical energy release rate ($mathrm{G}_{mathrm{c}}$) was determined via an analytical method and numerically by using finite element analysis (FEA) to compare the effectiveness of the respective methods. FEA further allowed to determine the influence of plasticity in the Al and polyimide layers and the relaxation of the Si-wedge, that is created during the CSN experiment, due to the polyimide layer. To separate the effect of wedge-relaxation and plasticity a mixed evaluation of using analytical methods with values obtained from FEA simulations was also performed. The experimental results show that the analytical method underestimates energy release rate compared to the FEA method, while a mixed approach overestimates the adhesion.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126669155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168443
D. Ursu, Melinda Vajda, Marius-Cristian Mareș, N. Miclău, M. Miclau, P. Svasta
In this work, the electrochemical impedance of a single dye sensitized solar cell (DSSC) and two parallel connected DSSCs were analyzed. The photo-electrochemical processes of parallel connected DSSCs under indoor light illumination were highlighted. Even if DSSCs did not have identical photovoltaic parameters after the fabrication process, the parallel connection determined “the harmonization”, behaving almost like two identical cells characterized by the similar electron transfer processes. The lack of a competition between the photovoltaic efficiencies of DSSCs connected in parallel at the expense of DSSC with better efficiency, and more, maintaining the highest efficiency, can open a new perspective in the implementation of DSSCs in electronic packaging devices for indoor conditions.
{"title":"Exploring the Photo-Electrochemical Processes of the Parallel Connected DSSCs in Indoor Conditions","authors":"D. Ursu, Melinda Vajda, Marius-Cristian Mareș, N. Miclău, M. Miclau, P. Svasta","doi":"10.1109/ISSE57496.2023.10168443","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168443","url":null,"abstract":"In this work, the electrochemical impedance of a single dye sensitized solar cell (DSSC) and two parallel connected DSSCs were analyzed. The photo-electrochemical processes of parallel connected DSSCs under indoor light illumination were highlighted. Even if DSSCs did not have identical photovoltaic parameters after the fabrication process, the parallel connection determined “the harmonization”, behaving almost like two identical cells characterized by the similar electron transfer processes. The lack of a competition between the photovoltaic efficiencies of DSSCs connected in parallel at the expense of DSSC with better efficiency, and more, maintaining the highest efficiency, can open a new perspective in the implementation of DSSCs in electronic packaging devices for indoor conditions.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"194 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123741632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168368
Fursik Andrii, O. Oliinyk
in this paper, a supercapacitor battery for power supply systems is studied. The benefits of using supercapacitors for power banks are researched and compared with other power supply solutions such as Li-Ion batteries. As well the technological features of using supercapacitors in power banks are described. The benefits and disadvantages of supercapacitor application in power banks are summarized.
{"title":"Modelling the Power Bank Supplied by Supercapacitor Energy Storage","authors":"Fursik Andrii, O. Oliinyk","doi":"10.1109/ISSE57496.2023.10168368","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168368","url":null,"abstract":"in this paper, a supercapacitor battery for power supply systems is studied. The benefits of using supercapacitors for power banks are researched and compared with other power supply solutions such as Li-Ion batteries. As well the technological features of using supercapacitors in power banks are described. The benefits and disadvantages of supercapacitor application in power banks are summarized.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121914847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168510
H. Wen, L. Augel, Wenjuan Wang, J. Knobbe
Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling.
{"title":"Characterization of AlSiCu/TiN/p-Si Schottky Contacts with Nanophotonic Structures for Near-infrared Photodetectors","authors":"H. Wen, L. Augel, Wenjuan Wang, J. Knobbe","doi":"10.1109/ISSE57496.2023.10168510","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168510","url":null,"abstract":"Schottky photodetectors based on internal photoemission have the potential of an adjustable detection range in the near-infrared range and Si compatible technology integration. The external quantum efficiency of Schottky photodetectors can be improved using nanophotonic structures, which enhance the absorption of the device. However, the electrical properties of Schottky photodetectors deviate under an altered metal-semiconductor interface topography. We characterize a common layer system for metal contacts consisting of a TiN interstitial layer between the p-Si wafer and the AlSiCu metallization. By varying the thickness of the TiN we discuss how homogeneity of the sputtered layers influence device properties with different interface topographies. Through electrical wafer-level characterization, the characteristics of the Schottky contact are evaluated and compared to the ideal physical modelling.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128300977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168454
S. Kardoš, I. Vehec
The subject of interest is the investigation of Li-ion electrochemical cells in the context of a diagnostic analysis of their properties and the possibility of implementing this knowledge into the application level. A specific measurement method was proposed and the dispersion of the energy flow per unit of voltage drop on the cell during its discharging by constant current over the lifetime horizon was investigated. The profiles of the energy yield characteristics are discussed, which in such an interpreted expression shows several significant regions determining important properties connected with the cell state of discharge and state of health.
{"title":"Investigation of Energy Flow in Particular Parts of the Discharge Characteristics of Li-ion Cells","authors":"S. Kardoš, I. Vehec","doi":"10.1109/ISSE57496.2023.10168454","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168454","url":null,"abstract":"The subject of interest is the investigation of Li-ion electrochemical cells in the context of a diagnostic analysis of their properties and the possibility of implementing this knowledge into the application level. A specific measurement method was proposed and the dispersion of the energy flow per unit of voltage drop on the cell during its discharging by constant current over the lifetime horizon was investigated. The profiles of the energy yield characteristics are discussed, which in such an interpreted expression shows several significant regions determining important properties connected with the cell state of discharge and state of health.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133895686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168314
P. Mach, Jiří Sokol, D. Bušek
Conductive adhesive joints were climatically aged with temperature pulses in the range of -40 to 115 °C. The joints were made of two types of electrically conductive adhesives with isotropic electrical conductivity. The insulating matrix of the adhesives was bis-phenol formaldehyde epoxy resin, and the conductive filler was silver flakes. One adhesive was two-component and the other one-component. Adhesives were applied to the printed circuit board by stencil printing, and then zero-value resistors were mounted by adhesive mounting. Thus, adhesion bonds were formed. The joints were first exposed for 15 minutes in the hot chamber of the thermal pulse testing device, then moved within 8 seconds to the cold chamber and exposed again for 15 minutes. This cycle was repeated two hundred times and five hundred times. The connection resistance was measured using the four-point method. Exposure to temperature pulses was found to cause small changes only in junction resistance.
{"title":"Effect of Temperature Shocks on the Resistance of Joints Formed of Conductive Adhesives","authors":"P. Mach, Jiří Sokol, D. Bušek","doi":"10.1109/ISSE57496.2023.10168314","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168314","url":null,"abstract":"Conductive adhesive joints were climatically aged with temperature pulses in the range of -40 to 115 °C. The joints were made of two types of electrically conductive adhesives with isotropic electrical conductivity. The insulating matrix of the adhesives was bis-phenol formaldehyde epoxy resin, and the conductive filler was silver flakes. One adhesive was two-component and the other one-component. Adhesives were applied to the printed circuit board by stencil printing, and then zero-value resistors were mounted by adhesive mounting. Thus, adhesion bonds were formed. The joints were first exposed for 15 minutes in the hot chamber of the thermal pulse testing device, then moved within 8 seconds to the cold chamber and exposed again for 15 minutes. This cycle was repeated two hundred times and five hundred times. The connection resistance was measured using the four-point method. Exposure to temperature pulses was found to cause small changes only in junction resistance.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"7 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114135292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-10DOI: 10.1109/ISSE57496.2023.10168342
D. Bušek, P. Vondrouš, P. Mach, K. Dušek
Incorrect production of PTHs (Plated Through Holes) lead to problems during PCBA (Printed Circuit Board Assembly), specifically during soldering and caused blow hole issues. A novel method for identification of incorrectly produced PTHs is suggested in this work. Samples with questionable quality of plated through holes were received for analysis and various micro-sections and optical observations were performed. As the issue is a statistical problem, a thorough diagnostic of a single cross-section – an approach used commonly nowadays is nearly worthless as the fault is often a single weak point located anywhere within a 3D area of a plated barrel or within a significant number of such barrels. A method based on the optical observation of analyzed samples immersed in a viscous liquid in a vacuum chamber was successfully implemented.
{"title":"Diagnostics of a Future Blow Hole Issue Before Assembly","authors":"D. Bušek, P. Vondrouš, P. Mach, K. Dušek","doi":"10.1109/ISSE57496.2023.10168342","DOIUrl":"https://doi.org/10.1109/ISSE57496.2023.10168342","url":null,"abstract":"Incorrect production of PTHs (Plated Through Holes) lead to problems during PCBA (Printed Circuit Board Assembly), specifically during soldering and caused blow hole issues. A novel method for identification of incorrectly produced PTHs is suggested in this work. Samples with questionable quality of plated through holes were received for analysis and various micro-sections and optical observations were performed. As the issue is a statistical problem, a thorough diagnostic of a single cross-section – an approach used commonly nowadays is nearly worthless as the fault is often a single weak point located anywhere within a 3D area of a plated barrel or within a significant number of such barrels. A method based on the optical observation of analyzed samples immersed in a viscous liquid in a vacuum chamber was successfully implemented.","PeriodicalId":373085,"journal":{"name":"2023 46th International Spring Seminar on Electronics Technology (ISSE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128517767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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