Pub Date : 2023-01-23DOI: 10.2174/2210681213666230123111027
S. Mondal, Riya Ghosh, R. Sharma
In the present study, a hydromagnetic Williamson nanofluid passed through a stretching sheet embedded in a porous media is being analyzed by assuming the impact of thermal radiation and magnetic field on the flow properties. Previously, many researchers have studied nanofluid flow, but hydromagnetic Williamson nanofluid passed through a stretching sheet embedded in a porous media will be a new finding among all researchers. Our objective is to study a hydromagnetic Williamson nanofluid passed through a stretching sheet embedded in a porous media is being analyzed by assuming the impact of thermal radiation and magnetic field on the flow properties. By using appropriate similarity transformation the governing equations with boundary conditions were converted into a dimensionless form. The derived ordinary differential equation was solved using Spectral local linearisation method. The outcomes indicate that velocity reduces with increase in Williamson, Porosity and Magnetic field parameters, whereas the concentration profile improves with these parameters. Entropy generation rate is also enhanced when the Reynolds number, concentration difference parameter and Brinkman number are increased. The results have been validated with existing research and our results are found to be in excellent agreement. The study finds that good agreement is achieved.
{"title":"Entropy generation effects on hydromagnetic Williamson nanofluid flow through a porous media","authors":"S. Mondal, Riya Ghosh, R. Sharma","doi":"10.2174/2210681213666230123111027","DOIUrl":"https://doi.org/10.2174/2210681213666230123111027","url":null,"abstract":"\u0000\u0000In the present study, a hydromagnetic Williamson nanofluid passed through a stretching sheet embedded in a porous media is being analyzed by assuming the impact of thermal radiation and magnetic field on the flow properties.\u0000\u0000\u0000\u0000Previously, many researchers have studied nanofluid flow, but hydromagnetic Williamson nanofluid passed through a stretching sheet embedded in a porous media will be a new finding among all researchers.\u0000\u0000\u0000\u0000Our objective is to study a hydromagnetic Williamson nanofluid passed through a stretching sheet embedded in a porous media is being analyzed by assuming the impact of thermal radiation and magnetic field on the flow properties.\u0000\u0000\u0000\u0000By using appropriate similarity transformation the governing equations with boundary conditions were converted into a dimensionless form. The derived ordinary differential equation was solved using Spectral local linearisation method.\u0000\u0000\u0000\u0000The outcomes indicate that velocity reduces with increase in Williamson, Porosity and Magnetic field parameters, whereas the concentration profile improves with these parameters. Entropy generation rate is also enhanced when the Reynolds number, concentration difference parameter and Brinkman number are increased.\u0000\u0000\u0000\u0000The results have been validated with existing research and our results are found to be in excellent agreement.\u0000\u0000\u0000\u0000The study finds that good agreement is achieved.\u0000","PeriodicalId":38913,"journal":{"name":"Nanoscience and Nanotechnology - Asia","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85828108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.2174/2210681213666221221141546
R. Lorenzo, Pidaparthy Vijaya
This paper analyses the performance of 5 nm gate length gate engineered oxide stack silicon on insulator (SOI) fin field-effect transistor (OS-Fin-FET) for the first time. The high dielectric (High-K) value of the material-based gate oxide stack structure increases both the analog and the radio frequency (RF) performance of the Fin-FET device when compared to standard single gate oxide material structures. The work function of the engineered gate structure further helps in advancing the performance of the device in terms of on current (Ion), off current (Ioff) and the ratio of Ion/Ioff. The proposed OS-FinFET device improves on current (Ion) of the device by 12% in comparison to the high-K dielectric gate oxide-based FinFET device. Simulation of the device is further extended to study different electrical characteristics of the proposed device under other biasing conditions, to estimate enhanced analog and RF performance where the device is highly suitable for low power and high-speed applications. Overall, the proposed device shows improvement in existing architectures of the devices. Technology computer-aided design (TCAD) tool is used to perform entire simulations of the proposed device with 5 nm gate length. To enhance analog and RF performance of the Fin-FET device at 5 nm gate length. Design of the sub-10 nm Fin-FET device undergoes charge shearing phenomena because of the minimum distance between source and drain. This problem is addressed by using High-K spacer over substrate but it leads to increase in the channel resistance and adverse short channel effects. A combination of different high-K dielectric materials can eliminate this performance. Hence most of the studies concentrated on spacer region and failed to consider channel region. This study tries to improve analog performance of the device using the approach of gate engineering with gate stack approach. The main objective of this study is to increase on current (Ion) of the device by implementing gate engineering approach, by choosing dual work function-based gate with oxide stack approach. The High-K dielectric material-based gate oxide reduces leakage current, decreases off current which will increase the ratio of Ion/Ioff. The dual work function gate material is taken with gate oxide stack approach by considering different High-K dielectric materials like HfO2, TiO2 with thin SiO2 layer as the interactive layer. Simulation of the device is carried out using TCAD Tool and results are compared with existing literature, to validate the results. The proposed architecture of the Fin-FET device delivers excellent results in terms of on current and subthreshold characteristics compared to existing literature. The proposed device gives high on current of 0.027 A and current ratio of 1.08X104. A complete comparative analysis is carried out with existing literature on the proposed device, where the proposed device resulted in high performance. The proposed device imp
{"title":"Performance Analysis of gate engineered High-K gate oxide stack SOI Fin-FET for 5 nm Technology","authors":"R. Lorenzo, Pidaparthy Vijaya","doi":"10.2174/2210681213666221221141546","DOIUrl":"https://doi.org/10.2174/2210681213666221221141546","url":null,"abstract":"\u0000\u0000This paper analyses the performance of 5 nm gate length gate engineered oxide stack silicon on insulator (SOI) fin field-effect transistor (OS-Fin-FET) for the first time. The high dielectric (High-K) value of the material-based gate oxide stack structure increases both the analog and the radio frequency (RF) performance of the Fin-FET device when compared to standard single gate oxide material structures. The work function of the engineered gate structure further helps in advancing the performance of the device in terms of on current (Ion), off current (Ioff) and the ratio of Ion/Ioff. The proposed OS-FinFET device improves on current (Ion) of the device by 12% in comparison to the high-K dielectric gate oxide-based FinFET device. Simulation of the device is further extended to study different electrical characteristics of the proposed device under other biasing conditions, to estimate enhanced analog and RF performance where the device is highly suitable for low power and high-speed applications. Overall, the proposed device shows improvement in existing architectures of the devices. Technology computer-aided design (TCAD) tool is used to perform entire simulations of the proposed device with 5 nm gate length.\u0000\u0000\u0000\u0000To enhance analog and RF performance of the Fin-FET device at 5 nm gate length.\u0000\u0000\u0000\u0000Design of the sub-10 nm Fin-FET device undergoes charge shearing phenomena because of the minimum distance between source and drain. This problem is addressed by using High-K spacer over substrate but it leads to increase in the channel resistance and adverse short channel effects. A combination of different high-K dielectric materials can eliminate this performance. Hence most of the studies concentrated on spacer region and failed to consider channel region. This study tries to improve analog performance of the device using the approach of gate engineering with gate stack approach.\u0000\u0000\u0000\u0000The main objective of this study is to increase on current (Ion) of the device by implementing gate engineering approach, by choosing dual work function-based gate with oxide stack approach. The High-K dielectric material-based gate oxide reduces leakage current, decreases off current which will increase the ratio of Ion/Ioff.\u0000\u0000\u0000\u0000The dual work function gate material is taken with gate oxide stack approach by considering different High-K dielectric materials like HfO2, TiO2 with thin SiO2 layer as the interactive layer. Simulation of the device is carried out using TCAD Tool and results are compared with existing literature, to validate the results.\u0000\u0000\u0000\u0000The proposed architecture of the Fin-FET device delivers excellent results in terms of on current and subthreshold characteristics compared to existing literature. The proposed device gives high on current of 0.027 A and current ratio of 1.08X104.\u0000\u0000\u0000\u0000A complete comparative analysis is carried out with existing literature on the proposed device, where the proposed device resulted in high performance. The proposed device imp","PeriodicalId":38913,"journal":{"name":"Nanoscience and Nanotechnology - Asia","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78279315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}