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White-Light Continuum Spectral Interferometry for Dispersion Characteristics Measurements in Anisotropic Crystals 白光连续光谱干涉法测量各向异性晶体色散特性
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719260
H. Delbarre, C. Przygodzki, D. Boucher
White-light spectral interferometry has been recently demonstrated to allow a very precise determination of dispersion [1, 2]. In usual isotropic materials (glass), the use of a correct dispersion rule (Sellmeier or Cauchy formula for instance) in a nonlinear fitting procedure can lead to an enhanced accuracy (of the order of 10−5) for the indices.
白光光谱干涉测量法最近被证明可以非常精确地测定色散[1,2]。在通常的各向同性材料(玻璃)中,在非线性拟合过程中使用正确的色散规则(例如Sellmeier或Cauchy公式)可以提高指数的精度(约为10−5)。
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引用次数: 0
Laser Welding of Magnetic Materials 磁性材料的激光焊接
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.718876
H. Seat, I. Watson
Industrial sectors with interest in welding magnetic materials include the aerospace, electrical and defence industries [1]. The effects of CO2 laser welding and high temperatures (i.e. above the Curie temperature) on the magnetism of ferromagnetic materials were investigated. A 1.2 kW MFKP CO2 laser was used to weld the magnetic material at a constant power of 1 kW in the CW mode, for different welding translation velocities. Figure 1 shows a schematic of the magnetic field measurement system. This consisted of two orthogonal translation tables and an RS miniature Hall effect Sensor (HES), attached to an outlying platform from the larger translation table. The x-y motion was controlled via a microprocessor so that the HES was translated over the entire surface of the welded magnets (2 Alcomax magnets: 8% Al, 11.5% Ni, 21% Co, 4% Cu, Fe). The signal from the HES was signal conditioned and fed into a data acquisition card located in the PC. The magnetic field strength over the laser weld and surface of the specimen was measured before welding, immediately after welding and 3 days after welding. Figure 2 shows the spatial differences in the magnetic properties of the sample immediately after welding and Figure 3 the corresponding data 3 days after welding. The magnetisation of the weld pool and HAZ was reduced immediately after welding; 3 days later, during which the samples were isolated, magnetism recovered over the specimen except in the weld zone where it had been damaged and stayed unrecovered. A high translation velocity maximised the remagnetisation process and reduced the demagnetised zone and HAZ.
对焊接磁性材料感兴趣的工业部门包括航空航天、电气和国防工业[1]。研究了CO2激光焊接和高温(即居里温度以上)对铁磁材料磁性的影响。采用1.2 kW的MFKP CO2激光器,在恒定功率为1 kW的连续模式下,对不同的焊接平移速度进行焊接。图1显示了磁场测量系统的原理图。这包括两个正交的平移台和一个RS微型霍尔效应传感器(HES),连接到较大平移台的外围平台上。x-y运动通过微处理器控制,使HES在焊接磁体的整个表面上平移(2个Alcomax磁体:8% Al, 11.5% Ni, 21% Co, 4% Cu, Fe)。来自HES的信号经过信号调理后输入到位于PC机上的数据采集卡中。分别在焊接前、焊接后和焊接后3天测量激光焊缝和试样表面的磁场强度。图2为焊接后试样磁性能的空间差异,图3为焊接后3天的相应数据。焊后熔池磁化强度和热影响区立即降低;3天后,在此期间,样品被隔离,磁性恢复在试样上,除了在焊接区,它已经损坏,并保持未恢复。高平移速度使再磁化过程最大化,减少了退磁区和热影响区。
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引用次数: 0
The Science and Technology of Organic EL Displays 有机发光二极管的科学与技术
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.718891
A. Hudson
For display applications, organic EL offers the possibility of efficient, low voltage, multicolour operation coupled with low production costs and robust design. Typical organic EL devices, as shown in figure 1, consist of several organic layers deposited between two electrodes The organic layers are usually deposited by vacuum sublimation1 or polymer spinning2. On applying a voltage across the device oppositely charged carriers are injected from the two electrodes and are transported to the recombination zone. The carriers then recombine forming excited molecular states which decay radiatively giving out emission with a characteristic spectrum.
对于显示应用,有机EL提供了高效,低电压,多色操作的可能性,加上低生产成本和坚固的设计。如图1所示,典型的有机电致发光器件由沉积在两个电极之间的几个有机层组成,有机层通常通过真空升华或聚合物纺丝沉积。在器件上施加电压时,从两个电极注入带相反电荷的载流子并将其输送到复合区。然后载流子重新组合形成激发态,这些激发态辐射衰减,发出具有特征光谱的发射。
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引用次数: 0
Effect of Molecular Sieve on Transient Output-Reduction and Laser Parameters in DC Discharged/Room Temperature Operated FAF CO Laser 分子筛对直流放电/室温FAF CO激光器瞬态输出衰减和激光参数的影响
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719506
Y. Kodama, H. Sato
The output power tends to transiently decrease with discharge time in a dc electrically pumped fast axial-flow (FAF) CO laser. This output reduction is mainly caused by both the temperature rise of gas mixture and deactivation of the excited CO molecule due to its dissociation into CO2 and O2 molecules.1 Especially, the latter seems to be predominant in the room temperature operated FAF CO laser system. The gas temperature rise due to the discharge can be compensated by fast gas-circulation through a heat exchanger along with either ethanol/dry ice coolants (or liquid nitrogen at subroom temperature operation) , whereas the CO2 molecules generated through the discharge process cannot be avoided at room temperature operation, though, it is well trapped with a cold trap of liquid nitrogen. Thus, we shall try to recover the output reduction transiently induced above by adsorbing the generated CO2 molecules by molecular sieve for the room temperature operation together with theoretical explanation. In addition, we shall also examine how the laser parameters such as the small-signal gain γ0.v saturation intensity Is and a measure of partial homogeneity m are influenced with insertion of molecular sieve.
直流电泵浦快速轴流(FAF) CO激光器的输出功率随放电时间的增加呈瞬态降低的趋势。这种输出的减少主要是由于混合气的温度升高和受激的CO分子解离成CO2和O2分子而失活所致特别是在室温操作的FAF CO激光系统中,后者似乎占主导地位。由于排放引起的气体温度升高可以通过热交换器与乙醇/干冰冷却剂(或亚室温操作时的液氮)进行快速气体循环来补偿,而在室温操作下,通过排放过程产生的二氧化碳分子无法避免,尽管它被液氮的冷阱很好地捕获。因此,我们将尝试用分子筛吸附产生的CO2分子进行室温操作,并进行理论解释,以暂时恢复上述引起的产量下降。此外,我们还将研究如何激光参数,如小信号增益γ0。v饱和强度Is和部分均匀性度量m受到分子筛插入的影响。
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引用次数: 0
Remote Laser-Induced Breakdown Spectroscopy Using a Novel Single-Fibre Arrangement 采用新型单纤维排列的远程激光诱导击穿光谱
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719625
D. Beddows, H. Kondo, G. W. Morris, H. Telle
Increasingly Laser-induced Breakdown Spectroscopy (LIBS) is being exploited in qualitative and quantitative analysis of solid samples. While the technique has been around for a number of years the recent, rapid development in laser and detector technology have made it possible to implement the technique for use in real-time and remote analysis. In general, LIBS has been implemented by using pulses from a Nd:YAG laser for micro plasma generation, with the laser radiation transmitted in free air, and by collecting the plasma emission via an optical fibre.
激光诱导击穿光谱(LIBS)在固体样品的定性和定量分析中得到了越来越多的应用。虽然该技术已经存在了几年,但近年来,激光和探测器技术的快速发展使得实现该技术用于实时和远程分析成为可能。一般来说,LIBS是通过使用Nd:YAG激光器的脉冲产生微等离子体,激光辐射在自由空气中传输,并通过光纤收集等离子体发射来实现的。
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引用次数: 1
Investigation of Intensity Noise in a Diode-Pumped Tm-Ho:YAG Laser 二极管泵浦Tm-Ho:YAG激光器强度噪声研究
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719594
S. Taccheo, G. Sorbello, S. Longhi, C. Svelto, P. Laporta
Laser intensity stability is of great interest for system design in metrology, sensor applications [1], and optical communications [2] to improve detection sensitivity and overall system performance. In this work we focus our attention on and experimentally investigate the physical mechanisms through which external noise sources induce intensity noise in a singlefrequency Tm-Ho:YAG laser to be used as local oscillator for 2-µm coherent LIDAR applications.
激光强度稳定性对于测量、传感器应用和光通信系统设计具有重要意义,可以提高检测灵敏度和整体系统性能。在这项工作中,我们关注并实验研究了外部噪声源诱导单频Tm-Ho:YAG激光器强度噪声的物理机制,该激光器用作2µm相干激光雷达应用的本振。
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引用次数: 4
In Vivo Optical Imaging of the Female Breast 女性乳房的体内光学成像
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.718886
G. W. Hooft, M. B. V. D. Mark, J. Hoogenraad, S. Colak, J. Paasschens, E. S. V. D. Linden
Due to its non-ionizing nature, optical mammography could be a very attractive alternative to X-ray screening. We have developed a CW optical tomography apparatus with which three-dimensional images of breasts can be obtained in vivo. It measures the attenuation coefficient κ=3μ a μ s ' of the breast tissue. The magnitude of the reduced scattering coefficient μ s ' in breast tissue is approximately 1 mm-1 and varies less than the absorption coefficient μ a .
由于其非电离性,光学乳房x光摄影可能是x射线筛查的一个非常有吸引力的替代方案。我们开发了一种连续波光学断层扫描设备,可以在体内获得乳房的三维图像。测量乳腺组织的衰减系数κ=3μ a μ s '。乳房组织中散射系数的减小幅度约为1 mm-1,其变化幅度小于吸收系数μ a。
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引用次数: 0
Measurement and Calculation of the Critical Pulsewidth for Gain Saturation in Semiconductor Optical Amplifiers 半导体光放大器增益饱和临界脉宽的测量与计算
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719051
P. Borri, J. Mørk, J. M. Hvam, A. Mecozzi
Active semiconductor optical waveguides are essential components in many recently proposed devices for high-speed optical signal processing. It is well known that ultrafast carrier dynamics, like carrier heating and spectral holeburning, lead to gain non-linearities, which restrict the modulation bandwidth of semiconductor lasers. In the case of pulse amplification, these non-linearities lead to a pulsewidth dependence of the gain saturation [1]. A critical pulsewidth can be defined [2], which separates two qualitatively different regimes: a long-pulse regime, where the gain is determined by the pulse energy only, and a short-pulse regime, where the gain also depends on the pulsewidth. Calculated critical pulsewidths are on the order of several picoseconds [1], which is getting in the range of pulses being explored for ultrafast optical signal processing. Experiments that we are aware of. however, do not investigate the detailed dependence of the saturation energy versus pulse duration, and subsequently do not allow extraction of the critical pulsewidth.
有源半导体光波导是许多高速光信号处理器件中必不可少的元件。众所周知,超快载流子动力学,如载流子加热和光谱烧洞,会导致增益非线性,从而限制半导体激光器的调制带宽。在脉冲放大的情况下,这些非线性导致脉冲宽度依赖于增益饱和[1]。临界脉冲宽度可以定义为[2],它将两种性质不同的状态分开:长脉冲状态,其中增益仅由脉冲能量决定;短脉冲状态,其中增益也取决于脉冲宽度。计算出的临界脉冲宽度约为几皮秒,这已经进入了用于超快光信号处理的脉冲范围。我们知道的实验。然而,不调查饱和能量与脉冲持续时间的详细依赖关系,随后不允许提取临界脉宽。
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引用次数: 50
Lidar Determination of the Mixing Layer Formation Delay in the Presence of a Fog 激光雷达测定雾存在下混合层形成延迟
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719073
P. Savov, B. Tatarov, B. Kaprielov, I. Kolev
The lidar investigation of dense atmospheric formations such as clouds and fogs is of great interest both for the fundamental and applied meteorology.
激光雷达对云和雾等稠密大气结构的研究对基础气象学和应用气象学都具有重要意义。
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引用次数: 0
Low Temperature Wafer Direct Bonding Between GaInAsP Etch Stop Layer and Gd/sub 3/Ga/sub 5/O/sub 12/ GaInAsP蚀刻停止层与Gd/sub 3/Ga/sub 5/O/sub 12/的低温晶圆直接键合
Pub Date : 1998-09-14 DOI: 10.1109/CLEOE.1998.719515
H. Yokoi, T. Mizumoto
gamer crystal for the aim of integrating a lher diode and an optical isolator In a precious study, we demonsrated the bonding between InP and several kinds ofgmetr [I] , the latter ofwhich are essential to an optical isolator. Figure 1 shows B laser diode iiitegrated with an uptical isolator by wafa direct banding A GalnAsP etch stop layer ofthe laser diode is prepared for vertical alignment between an active layer of the laser diode and a guiding layer of the optical isolator. The vertical alignment can be achieved by adjusting the thickness of cladding layers The lateral alignment of a waveguide with the laser stripe can be accampliahed by mowntional lithography and etching techniques In this paper, we report the direct bonding between GalnAsP and GdiGasOu [GGG) GGG ss used BS a mbstrate for epitaxial growth of maget ic garnets. Ali wafers were chmically treated. and contacted at roam temperature. The contacted samplas were immediately haded into an anneaiig furnace for the heat treatment at tcmperatures between I10 and 3301'. since magnetic garnets were damaged by heat treatment in H2 ambient st 385'L. 121 A pressure of250 p l c d was applied to the wafers during the h a t t rmment The bonded samples w ~ r e subjected to V ~ O U B dewce fabbrication pracesses, such rn baking, thermal annealing. wet etching and exposure to the plasma discharge. for investigmng the bundine Jurabihty. The bonding betaeen GalnAsP and GCG was achieved d t h the heat treatmm at temperatures between 110 and 3307: The samples bonded by the heat treatment at 110 and 220C rcmvned banded against all the processes The bonding between a terraced l a w diode and GGG was also petiomcd. The GalnAsP etched surface was bonded with C i G by heat treatnient at temperatures between I I O and 22OT. We believe that the low temperature wafer direct bonding is a promising technique for the integration ofa semiconductor laser diode and an optical isolator
在一项宝贵的研究中,我们展示了InP与几种光栅之间的键合[I],后者是光学隔离器所必需的。图1显示了通过wafa直接带带集成的B激光二极管。激光二极管的GalnAsP蚀刻停止层是为激光二极管的有源层和光学隔离器的引导层之间的垂直校准而准备的。通过调整熔覆层厚度可以实现垂直对准,通过动态光刻和蚀刻技术可以实现波导与激光条纹的横向对准。本文报道了GalnAsP与GdiGasOu [GGG] GGG之间的直接键合,使用BS作为磁性石榴石外延生长的基质。阿里晶圆片经过化学处理。在漫游温度下接触。接触后的样品立即放入退火炉,在I10至3301℃之间进行热处理。磁性石榴石在385'L的H2环境中被热处理破坏。在制备过程中,对晶圆施加250p1c / d的压力,结合后的样品进行了V ~ O ~ U ~ B器件的制备工艺,如烘烤、热退火等。湿法蚀刻和暴露于等离子体放电。用于调查自然灾害。在110 ~ 3307℃的温度下进行热处理,得到了GalnAsP和GCG的结合;在110 ~ 220℃的温度下进行热处理,得到的样品在所有的工艺条件下都呈带状。通过热处理,将GalnAsP蚀刻表面与C - i - G键合在i - i - O ~ 22℃之间。我们认为低温晶圆直接键合技术是一种很有前途的半导体激光二极管与光隔离器集成技术
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引用次数: 0
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CLEO/Europe Conference on Lasers and Electro-Optics
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