Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719471
T. Williamson, A. H. El-Astal, G. Martin, L. Doyle, A. Al-khateeb, I. Waver, D. Riley, M. Lamb, T. Morrow, C. Lewis
Development of spectroscopic and electrostatic probe techniques for the quantitative characterisation of low temperature laser ablated plasma plumes are described. The titanium plasma plume is formed by KrF irradiation, incident on a rotating target at laser fluences of 2-6 Jem−2 with a spot size 1.4 mm x 1.4 mm. A collimated, short pulsed, tunable dye laser at a set delay time, between 500ns - 2µs, is used to spatially and temporally probe the plasma plume in a direction parallel to the target surface (i.e. in x-z plane). For a plasma under-going self-similar expansion, the observed absorbance values A(ΔλS, z) are related to the corresponding absorber number densities N(x, z) within the (x-z) plane by (1) where f is the absorption oscillator strength, t is the probe delay time and ΔλS is the dye laser detuning from line centre wavelength λ0 of the transition.
描述了用于低温激光烧蚀等离子体羽流定量表征的光谱和静电探针技术的发展。钛等离子体羽流是由KrF照射在旋转目标上形成的，激光影响为2-6 Jem−2，光斑尺寸为1.4 mm x 1.4 mm。采用准直、短脉冲、可调谐染料激光器，在设定的延迟时间(500ns - 2µs)之间，对平行于目标表面方向(即x-z平面)的等离子体羽流进行空间和时间探测。对于经历自相似膨胀的等离子体，观察到的吸光度值a (ΔλS, z)与(x-z)平面内相应的吸收器数密度N(x, z)的关系为(1)，其中f为吸收振荡器强度，t为探针延迟时间，ΔλS为染料激光从跃迁的线中心波长λ0失调谐。
{"title":"Neutral and Ion Number Density Mapping of Laser Ablated Titanium Plasma Plumes Using Spectroscopic and Electrostatic Probe Techniques","authors":"T. Williamson, A. H. El-Astal, G. Martin, L. Doyle, A. Al-khateeb, I. Waver, D. Riley, M. Lamb, T. Morrow, C. Lewis","doi":"10.1109/CLEOE.1998.719471","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719471","url":null,"abstract":"Development of spectroscopic and electrostatic probe techniques for the quantitative characterisation of low temperature laser ablated plasma plumes are described. The titanium plasma plume is formed by KrF irradiation, incident on a rotating target at laser fluences of 2-6 Jem−2 with a spot size 1.4 mm x 1.4 mm. A collimated, short pulsed, tunable dye laser at a set delay time, between 500ns - 2µs, is used to spatially and temporally probe the plasma plume in a direction parallel to the target surface (i.e. in x-z plane). For a plasma under-going self-similar expansion, the observed absorbance values A(ΔλS, z) are related to the corresponding absorber number densities N(x, z) within the (x-z) plane by (1) where f is the absorption oscillator strength, t is the probe delay time and ΔλS is the dye laser detuning from line centre wavelength λ0 of the transition.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132608651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.718884
T. Shepherd
Photonic band gaps are ranges of frequency within which electromagnetic propagation is completely forbidden. They are present in certain materials which possess a periodicity of permittivity at the wavelength scale. Materials with these extreme properties are not known to occur naturally, and. at the optical wavelength scale, require fabrication methods at the current limits of technological feasibility. Such a photonic crystal provides a lossless barrier to propagation, and can suppress the emission of a photon by a decaying atom if the frequency of the emitted photon lies within the gap. A preferred propagation route, or mode, can be specified by designed defects within the photonic crystal; thus it is expected that I photonic crystals can provide a means whereby spontaneous emission is controlled in active media, and that all the spontaneously emitted light enters a single mode, resulting in an ideal zero-threshold laser. More generally, the photonic density of states is altered in these materials, and spontaneous emission can be enhanced or suppressed, as required. Other applications include novel all-angle reflectors, narrow-band filters, resonators, waveguides, and delay lines. When the fabrication problems for optical photonic crystals have been conquered, wavelength-scale periodic media will form an essential functions in a large range of optoelectronic systems.
{"title":"Photonic Band Gaps","authors":"T. Shepherd","doi":"10.1109/CLEOE.1998.718884","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.718884","url":null,"abstract":"Photonic band gaps are ranges of frequency within which electromagnetic propagation is completely forbidden. They are present in certain materials which possess a periodicity of permittivity at the wavelength scale. Materials with these extreme properties are not known to occur naturally, and. at the optical wavelength scale, require fabrication methods at the current limits of technological feasibility. Such a photonic crystal provides a lossless barrier to propagation, and can suppress the emission of a photon by a decaying atom if the frequency of the emitted photon lies within the gap. A preferred propagation route, or mode, can be specified by designed defects within the photonic crystal; thus it is expected that I photonic crystals can provide a means whereby spontaneous emission is controlled in active media, and that all the spontaneously emitted light enters a single mode, resulting in an ideal zero-threshold laser. More generally, the photonic density of states is altered in these materials, and spontaneous emission can be enhanced or suppressed, as required. Other applications include novel all-angle reflectors, narrow-band filters, resonators, waveguides, and delay lines. When the fabrication problems for optical photonic crystals have been conquered, wavelength-scale periodic media will form an essential functions in a large range of optoelectronic systems.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132812614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Long-wavelength Vertical Cavity Lasers (VCLs) emitting at 1300 or 1550nm are considered as promising candidates as low-cost light sources in fiber optical communication systems Despite the success of their short-wavelength counterparts, and even the demonstration of well-above room temperature continuous operation of a double-fused VCSEL at 155nm /1/, their final demand on mirror reflectivity (>99.5%), uniform current injection and exact gain-cavity tuning, is even further pronounced in the long wavelength regime. This is mainly due to excessive losses (intervalence band absorption, Auger recombination and diffraction) and a relatively small refractive index difference in the InGaAsP/InP system. To overcome these problems, several generically different designs have been presented and investigated The so far most successful approaches use at least one wafer fusion step to combine an InGaAsP active layer with one or two AlGaAs/GaAs DBRs However, such solutions are rather complex from a processing point of view, not yet demonstrated as full two-inch compatible. A more attractive design in this respect is based on the combination of an InGaAsP/InP bottom DBR and a dielectric top mirror So far such lasers have been limited to low-temperature operation /2/, but significant improvements can still be expected from a better optimized current injection scheme or improved dielectric mirror quality Alternative approaches, e g., based on GaInNAs lattice matched to GaAs as active material may also become of importance.
{"title":"Long Wavelength Vertical Cavity Lasers","authors":"K. Streubel, M. Hammar","doi":"10.1117/12.356889","DOIUrl":"https://doi.org/10.1117/12.356889","url":null,"abstract":"Long-wavelength Vertical Cavity Lasers (VCLs) emitting at 1300 or 1550nm are considered as promising candidates as low-cost light sources in fiber optical communication systems Despite the success of their short-wavelength counterparts, and even the demonstration of well-above room temperature continuous operation of a double-fused VCSEL at 155nm /1/, their final demand on mirror reflectivity (>99.5%), uniform current injection and exact gain-cavity tuning, is even further pronounced in the long wavelength regime. This is mainly due to excessive losses (intervalence band absorption, Auger recombination and diffraction) and a relatively small refractive index difference in the InGaAsP/InP system. To overcome these problems, several generically different designs have been presented and investigated The so far most successful approaches use at least one wafer fusion step to combine an InGaAsP active layer with one or two AlGaAs/GaAs DBRs However, such solutions are rather complex from a processing point of view, not yet demonstrated as full two-inch compatible. A more attractive design in this respect is based on the combination of an InGaAsP/InP bottom DBR and a dielectric top mirror So far such lasers have been limited to low-temperature operation /2/, but significant improvements can still be expected from a better optimized current injection scheme or improved dielectric mirror quality Alternative approaches, e g., based on GaInNAs lattice matched to GaAs as active material may also become of importance.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117296871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719368
J. Wendland, H. Baker, D. Hall
{"title":"Operation of the Atomic Xenon Laser Near 4/spl mu/m","authors":"J. Wendland, H. Baker, D. Hall","doi":"10.1109/CLEOE.1998.719368","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719368","url":null,"abstract":"","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117297605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719449
J. Sharp, D. Budgett, T. G. Slack, B. F. Scott
The compact phase-conjugating correlator (PCC) devised by Duelli et al. [1] provides a compact and robust correlator design while being compact and insensitive to phase imperfections in the transform optics and spatial light modulator (SLM) commonly found in the more conventional Vander-Lugt correlator. This design has been allied to that of the hybrid concept described by Young et al. [2] to provide high-speed performance. The correlator is shown schematically in figure 1.
{"title":"Simulation and Experimental Analysis of a Phase Conjugating Correlator","authors":"J. Sharp, D. Budgett, T. G. Slack, B. F. Scott","doi":"10.1109/CLEOE.1998.719449","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719449","url":null,"abstract":"The compact phase-conjugating correlator (PCC) devised by Duelli et al. [1] provides a compact and robust correlator design while being compact and insensitive to phase imperfections in the transform optics and spatial light modulator (SLM) commonly found in the more conventional Vander-Lugt correlator. This design has been allied to that of the hybrid concept described by Young et al. [2] to provide high-speed performance. The correlator is shown schematically in figure 1.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130761189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719474
L. Antonova, R. Bayazitov, M. F. Galyautdinov, R. Grotzchel
Laser annealing of semiconductor layers by irradiation directed to the backside of the substrate is promising technique for modification of implanted layers and semiconductor structures. This technique allows to recrystallize the buried layers without disruption of the surface. However, the using of the industrial lasers with λ=1.06 µm for the backside annealing of silicon structures is ineffective, due to the screening of the powerful irradiation by the silicon substrate.
{"title":"Backside-Laser Annealing of Silicon at Low Temperature","authors":"L. Antonova, R. Bayazitov, M. F. Galyautdinov, R. Grotzchel","doi":"10.1109/CLEOE.1998.719474","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719474","url":null,"abstract":"Laser annealing of semiconductor layers by irradiation directed to the backside of the substrate is promising technique for modification of implanted layers and semiconductor structures. This technique allows to recrystallize the buried layers without disruption of the surface. However, the using of the industrial lasers with λ=1.06 µm for the backside annealing of silicon structures is ineffective, due to the screening of the powerful irradiation by the silicon substrate.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130855133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719618
R. Jenkins, R. Devereux, A. F. Blockley
The paper describes a novel integrated optics approach to coherent IO.6p.m LTDAR sysLeJIl!S The COIlrepI IS based on usmg hoUow wavc:guides to gUide light bcrnCl:n romponell.� l(X;ated in a conmlOli dl.::lcctnc substra1e The concept referred to as EQllow �3veguidc Integrated Qptm (HOW-IO), lias am'aJltagcs in relation to achieving and maintaining good coherent mi...ang efficieJldes and has lhe potenl1al to: redUtt size. increase ruggedness and ]ov.-cr manufactunng costs The figure shmvs a plan V!e.' photograph of a HOW-TO interferometer subs,'Slcm �hich 'f ha'f realtsed m practice. The mtegratcd oomponents and interconnecting waveguides are c1earl)' visible TIlt' subsystem was formed i n 11 lROxJ90xZ(Jmm polycl'vstalJine al umIna SubSlralC usillg a computer confrolled lmU;lIg machine Polycrystalhnt: alumina was chus�:ll as the substrate and lid material because its o p tical pT!1penies. In c�nJunC:l1!1n with 'hegl.ll dcs of approprIate cross sectIon allD Ille realisatIOn of 101
{"title":"An Integrated Optic Approach to 10/spl mu/m LIDAR","authors":"R. Jenkins, R. Devereux, A. F. Blockley","doi":"10.1109/CLEOE.1998.719618","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719618","url":null,"abstract":"The paper describes a novel integrated optics approach to coherent IO.6p.m LTDAR sysLeJIl!S The COIlrepI IS based on usmg hoUow wavc:guides to gUide light bcrnCl:n romponell.� l(X;ated in a conmlOli dl.::lcctnc substra1e The concept referred to as EQllow �3veguidc Integrated Qptm (HOW-IO), lias am'aJltagcs in relation to achieving and maintaining good coherent mi...ang efficieJldes and has lhe potenl1al to: redUtt size. increase ruggedness and ]ov.-cr manufactunng costs The figure shmvs a plan V!e.' photograph of a HOW-TO interferometer subs,'Slcm �hich 'f ha'f realtsed m practice. The mtegratcd oomponents and interconnecting waveguides are c1earl)' visible TIlt' subsystem was formed i n 11 lROxJ90xZ(Jmm polycl'vstalJine al umIna SubSlralC usillg a computer confrolled lmU;lIg machine Polycrystalhnt: alumina was chus�:ll as the substrate and lid material because its o p tical pT!1penies. In c�nJunC:l1!1n with 'hegl.ll dcs of approprIate cross sectIon allD Ille realisatIOn of 101","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130855243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719395
R. Carman, G. Hogan, C. Webb
Experimental studies of the excitation phase in an elemental copper vapour laser immediately before the establishment of lasing action at 510.6nm and 578.2nm have shown that the discharge current can reach 60% of the peak value before any measurable excitation of the discharge plasma is observed [1]. This “phantom current” is observed typically 50-70ns before the appearance of spontaneous emission from Cu I states, and changes in atomic population densities in Cu I, as measured by spatially and time resolved hook spectroscopy. It has been proposed that the phantom current coincides with the acceleration phase of free-electrons remaining from the previous excitation pulse whose energies remain below the threshold for inelastic collisions [1]. However, a number of issues relating to the phenomenon remain unclear. For example, it is not known whether there is any significant energy deposition into the plasma during this period and whether this affects subsequent lasing action and overall efficiency of the laser. To provide further insight, a detailed computer model [2] has been used to simulate the plasma kinetics and lasing behaviour during the excitation phase of the discharge. The calculations have been carried out over multiple excitation/afterglow cycles to yield fully self-consistent results and accurately reproduce the pre-pulse plasma conditions. Results from the model will be compared with experimental data for I-V characteristics, radially and time resolved hook population densities for selected Cu I states, electron densities, and laser pulse intensities. Results from the model indicate that the phantom current can indeed be attributed to the acceleration and drift of the pre-pulse electrons which occurs as the electron temperature is raised to ~2-3eV corresponding to the threshold energies required for excitation of Cu states. The phantom current also coincides with a local minimum of the plasma resistivity which occurs as a result of the complex interplay between the electron temperature and the overall electron-heavy particle collision frequency. Under conditions where the phantom current is less important (ie. reduced prepulse electron density), the model suggests that laser pulse energies should increase, although this effect appears to be unrelated to power deposition issues during the period of the phantom current.
{"title":"Plasma Kinetics Issues During the Excitation Phase in an Elemental Copper Vapour Laser: Influence of the \"Phantom Current\" on the Formation of Laser Output","authors":"R. Carman, G. Hogan, C. Webb","doi":"10.1109/CLEOE.1998.719395","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719395","url":null,"abstract":"Experimental studies of the excitation phase in an elemental copper vapour laser immediately before the establishment of lasing action at 510.6nm and 578.2nm have shown that the discharge current can reach 60% of the peak value before any measurable excitation of the discharge plasma is observed [1]. This “phantom current” is observed typically 50-70ns before the appearance of spontaneous emission from Cu I states, and changes in atomic population densities in Cu I, as measured by spatially and time resolved hook spectroscopy. It has been proposed that the phantom current coincides with the acceleration phase of free-electrons remaining from the previous excitation pulse whose energies remain below the threshold for inelastic collisions [1]. However, a number of issues relating to the phenomenon remain unclear. For example, it is not known whether there is any significant energy deposition into the plasma during this period and whether this affects subsequent lasing action and overall efficiency of the laser. To provide further insight, a detailed computer model [2] has been used to simulate the plasma kinetics and lasing behaviour during the excitation phase of the discharge. The calculations have been carried out over multiple excitation/afterglow cycles to yield fully self-consistent results and accurately reproduce the pre-pulse plasma conditions. Results from the model will be compared with experimental data for I-V characteristics, radially and time resolved hook population densities for selected Cu I states, electron densities, and laser pulse intensities. Results from the model indicate that the phantom current can indeed be attributed to the acceleration and drift of the pre-pulse electrons which occurs as the electron temperature is raised to ~2-3eV corresponding to the threshold energies required for excitation of Cu states. The phantom current also coincides with a local minimum of the plasma resistivity which occurs as a result of the complex interplay between the electron temperature and the overall electron-heavy particle collision frequency. Under conditions where the phantom current is less important (ie. reduced prepulse electron density), the model suggests that laser pulse energies should increase, although this effect appears to be unrelated to power deposition issues during the period of the phantom current.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132992865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719264
S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley
The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.
{"title":"Harmonic Modelocking at up to 440 GHz Repetition Rates in InGaAs-InAIGaAs Quantum Well Lasers","authors":"S. McDougall, C. Ironside, A. C. Bryce, J. Marsh, B. Vogele, C. Stanley","doi":"10.1109/CLEOE.1998.719264","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719264","url":null,"abstract":"The InGaAs-InAlGaAs quaternary quantum well material system forms an alternative to the conventional InGaAsP based diode lasers for use in 1.3µm and 1.55µm fibre optic systems. Larger conduction band offsets and a greater thermal stability compared to the InGaAsP system makes InAlGaAs material attractive for both high speed modulators [1] and room temperature high power lasers. In this paper we present the first demonstration to our knowledge of monolithic modelocking action from InGaAs-InAlGaAs laser diodes.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133317770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-09-14DOI: 10.1109/CLEOE.1998.719628
H. Haferkamp, F. von Alvensleben, A. von Busse, O. Thurk
Compared to other technologically relevant laser machining processes, up to now. laser cutting is the application most frequently used. With respect to the large amount of different materials that can be machined, this technology has reached a stable position within the world market of material processing. Machining quality for laser beam cutting is influenced by various laser and processing parameters. Process-integrated quality techniques have to be applied to ensure high-quality products and a cost effective use of the laser manufacturing plant.
{"title":"On-Line Temperature Field Measuring System for Quality Control During Laser Beam Cutting","authors":"H. Haferkamp, F. von Alvensleben, A. von Busse, O. Thurk","doi":"10.1109/CLEOE.1998.719628","DOIUrl":"https://doi.org/10.1109/CLEOE.1998.719628","url":null,"abstract":"Compared to other technologically relevant laser machining processes, up to now. laser cutting is the application most frequently used. With respect to the large amount of different materials that can be machined, this technology has reached a stable position within the world market of material processing. Machining quality for laser beam cutting is influenced by various laser and processing parameters. Process-integrated quality techniques have to be applied to ensure high-quality products and a cost effective use of the laser manufacturing plant.","PeriodicalId":404067,"journal":{"name":"CLEO/Europe Conference on Lasers and Electro-Optics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133677891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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