首页 > 最新文献

2016 International Great Lakes Symposium on VLSI (GLSVLSI)最新文献

英文 中文
RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO2/Hf 1T1R RRAM memory cell RRAM刷新电路:一种解决HfO2/Hf 1T1R RRAM存储单元软错误故障的方案
Pub Date : 2016-05-18 DOI: 10.1145/2902961.2903017
Amr M. S. Tosson, M. Anis, Lan Wei
RRAM-based memory is a promising emerging technology for both on-chip and stand-alone non-volatile data storage in advanced technologies. In addition to its small dimensions, the RRAM device has many technological advantages including its low-programming voltages, high speed, low power, CMOS-compatible fabrication process, and potentially monolithic 3D integration. However, one of the critical challenges for RRAM technology is the reliability concerns due to retention and endurance failures. In this paper, we propose a novel Refresh circuit for 1T1R RRAM array which detects and distinguishes soft and hard errors from retention and endurance failures, as well as corrects the soft errors through refreshing. Using the HfO2/ Hf RRAM array, our simulation results show that the proposed solution increases the resilience to soft-error of an 8Gb RRAM-based memory by 80% with a small penalty on the energy and delay of the Read operations (6% and 0.4% respectively). The proposed methodology can be used for other RRAM arrays with minor modifications to the design parameters depending on the characteristics of RRAM cell.
基于rram的存储器是一种很有前途的新兴技术,无论是片上存储还是独立的非易失性数据存储。除了尺寸小之外,RRAM器件还具有许多技术优势,包括低编程电压、高速度、低功耗、cmos兼容制造工艺以及潜在的单片3D集成。然而,RRAM技术面临的一个关键挑战是由于保留和耐久性故障引起的可靠性问题。本文提出了一种新的1T1R RRAM阵列的刷新电路,该电路可以检测和区分软性错误和硬性错误,并通过刷新来纠正软性错误。使用HfO2/ Hf RRAM阵列,我们的仿真结果表明,所提出的解决方案将基于8Gb RRAM的内存的软错误恢复能力提高了80%,并且对读取操作的能量和延迟的影响很小(分别为6%和0.4%)。所提出的方法可用于其他RRAM阵列,根据RRAM单元的特性对设计参数进行微小修改。
{"title":"RRAM refresh circuit: A proposed solution to resolve the soft-error failures for HfO2/Hf 1T1R RRAM memory cell","authors":"Amr M. S. Tosson, M. Anis, Lan Wei","doi":"10.1145/2902961.2903017","DOIUrl":"https://doi.org/10.1145/2902961.2903017","url":null,"abstract":"RRAM-based memory is a promising emerging technology for both on-chip and stand-alone non-volatile data storage in advanced technologies. In addition to its small dimensions, the RRAM device has many technological advantages including its low-programming voltages, high speed, low power, CMOS-compatible fabrication process, and potentially monolithic 3D integration. However, one of the critical challenges for RRAM technology is the reliability concerns due to retention and endurance failures. In this paper, we propose a novel Refresh circuit for 1T1R RRAM array which detects and distinguishes soft and hard errors from retention and endurance failures, as well as corrects the soft errors through refreshing. Using the HfO2/ Hf RRAM array, our simulation results show that the proposed solution increases the resilience to soft-error of an 8Gb RRAM-based memory by 80% with a small penalty on the energy and delay of the Read operations (6% and 0.4% respectively). The proposed methodology can be used for other RRAM arrays with minor modifications to the design parameters depending on the characteristics of RRAM cell.","PeriodicalId":407054,"journal":{"name":"2016 International Great Lakes Symposium on VLSI (GLSVLSI)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125341649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Polynomial arithmetic using sequential stochastic logic 使用顺序随机逻辑的多项式算法
Pub Date : 2016-05-18 DOI: 10.1145/2902961.2902981
N. Saraf, K. Bazargan
We present the design of stochastic computing systems based on sequential logic to implement arbitrary polynomial functions. Stochastic computing is an emerging alternative computing paradigm that performs arithmetic operations on real-valued data represented as random bitstreams using digital logic gates. Stochastic computing systems are capable of realizing complex mathematical operations using a small number of hardware resources by expressing the computation in terms of probabilities. Moreover, the stochastic representation of data using random bitstreams is extremely robust against bit errors. We present a systematic approach to implement arbitrary polynomial functions in stochastic computing using sequential logic, and compare our approach against prior conventional and stochastic implementations.
提出了一种基于顺序逻辑的随机计算系统的设计,以实现任意多项式函数。随机计算是一种新兴的替代计算范式,它使用数字逻辑门对表示为随机比特流的实值数据执行算术运算。随机计算系统能够利用少量的硬件资源,用概率的形式来表示计算,从而实现复杂的数学运算。此外,使用随机比特流的数据随机表示对比特错误具有极强的鲁棒性。我们提出了一个系统的方法来实现任意多项式函数在随机计算使用顺序逻辑,并比较我们的方法与先前的传统和随机实现。
{"title":"Polynomial arithmetic using sequential stochastic logic","authors":"N. Saraf, K. Bazargan","doi":"10.1145/2902961.2902981","DOIUrl":"https://doi.org/10.1145/2902961.2902981","url":null,"abstract":"We present the design of stochastic computing systems based on sequential logic to implement arbitrary polynomial functions. Stochastic computing is an emerging alternative computing paradigm that performs arithmetic operations on real-valued data represented as random bitstreams using digital logic gates. Stochastic computing systems are capable of realizing complex mathematical operations using a small number of hardware resources by expressing the computation in terms of probabilities. Moreover, the stochastic representation of data using random bitstreams is extremely robust against bit errors. We present a systematic approach to implement arbitrary polynomial functions in stochastic computing using sequential logic, and compare our approach against prior conventional and stochastic implementations.","PeriodicalId":407054,"journal":{"name":"2016 International Great Lakes Symposium on VLSI (GLSVLSI)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126676483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Static noise margin based yield modelling of 6T SRAM for area and minimum operating voltage improvement using recovery techniques 基于静态噪声裕度的6T SRAM产率建模,利用恢复技术改善面积和最小工作电压
Pub Date : 2016-05-18 DOI: 10.1145/2902961.2903005
Nidhi Batra, Pawan Sehgal, S. Kaushik, M. Hashmi, Sudesh Bhalla, Anuj Grover
In advanced technology nodes, the process variations deteriorate SRAM performance and greatly affect yield. It is necessary to formulate yield estimation models to optimize SRAMs and effectively trade-off area, performance and robustness. We propose models that in addition to enabling yield estimates also enable evaluation of lowering minimum operational voltage (VDDMIN). We present a quantitative analysis for SNM limited SRAM yield using Design of Experiments (DOE) method. The proposed framework for yield based design can also utilize recovery techniques like Error Correcting Codes (ECC) and redundancy and quantifies yield, area, and VDDmin improvements. We also present a case study that trades-off ECC recovery budget, VDDmin and area gain. We show 25% improvement in area and VDDmin lowering by 300mV at constant yield levels by using 50% of ECC recovery budget.
在先进的技术节点上,工艺变化会降低SRAM的性能并严重影响良率。有必要建立产量估计模型来优化sram,并有效地权衡面积、性能和鲁棒性。我们提出的模型除了能够估算产量外,还能够评估降低最低工作电压(VDDMIN)。本文采用实验设计(DOE)方法对SNM限制SRAM产率进行了定量分析。提出的基于良率的设计框架还可以利用纠错码(ECC)和冗余等恢复技术,量化良率、面积和VDDmin的改进。我们还提出了一个案例研究,权衡了ECC恢复预算,VDDmin和面积增益。我们显示,在恒定产量水平下,使用50%的ECC恢复预算,面积提高了25%,VDDmin降低了300mV。
{"title":"Static noise margin based yield modelling of 6T SRAM for area and minimum operating voltage improvement using recovery techniques","authors":"Nidhi Batra, Pawan Sehgal, S. Kaushik, M. Hashmi, Sudesh Bhalla, Anuj Grover","doi":"10.1145/2902961.2903005","DOIUrl":"https://doi.org/10.1145/2902961.2903005","url":null,"abstract":"In advanced technology nodes, the process variations deteriorate SRAM performance and greatly affect yield. It is necessary to formulate yield estimation models to optimize SRAMs and effectively trade-off area, performance and robustness. We propose models that in addition to enabling yield estimates also enable evaluation of lowering minimum operational voltage (VDDMIN). We present a quantitative analysis for SNM limited SRAM yield using Design of Experiments (DOE) method. The proposed framework for yield based design can also utilize recovery techniques like Error Correcting Codes (ECC) and redundancy and quantifies yield, area, and VDDmin improvements. We also present a case study that trades-off ECC recovery budget, VDDmin and area gain. We show 25% improvement in area and VDDmin lowering by 300mV at constant yield levels by using 50% of ECC recovery budget.","PeriodicalId":407054,"journal":{"name":"2016 International Great Lakes Symposium on VLSI (GLSVLSI)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127876084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Extracting designs of secure IPs using FPGA CAD tools 使用FPGA CAD工具提取安全ip的设计
Pub Date : 2016-05-18 DOI: 10.1145/2902961.2903033
Vincent Mirian, P. Chow
In today's competitive market, a company's success is strongly dependent on delivering sophisticated and state-of-the-art IPs prior to their competitors. To take a short cut, a company may resort to reverse engineering or pirating their competitor's IP. In this paper, we examine the feasibility of extracting the design of a secure IP from one technology and using it in another. In particular, we start by extracting the IP from an FPGA vendor tool flow and map the IP blocks to an ASIC technology. We show that there is not a significant degradation in quality compared to starting with the original source, thus showing that taking a pirated IP from an FPGA and using it in another technology is viable, and therefore worth doing. This demonstrates a clear motivation for patching a vulnerability in FPGA CAD tools. Note that the intent of this work is not to promote the piracy of IPs. Instead, the goal is to demonstrate a mechanism for extracting a design as a means towards understanding what methods of pirating are possible, and whether they can be prevented.
在当今竞争激烈的市场中,一家公司的成功很大程度上依赖于先于竞争对手推出复杂且最先进的ip。为了走捷径,公司可能会采取逆向工程或盗版竞争对手的知识产权。在本文中,我们研究了从一种技术中提取安全IP设计并将其用于另一种技术的可行性。特别是,我们首先从FPGA供应商工具流中提取IP,并将IP块映射到ASIC技术。我们表明,与从原始来源开始相比,没有明显的质量下降,从而表明从FPGA获取盗版IP并将其用于另一种技术是可行的,因此值得这样做。这表明了在FPGA CAD工具中修补漏洞的明确动机。请注意,这项工作的目的不是促进知识产权的盗版。相反,我们的目标是展示一种提取设计的机制,以此来理解哪些盗版方法是可能的,以及它们是否可以被阻止。
{"title":"Extracting designs of secure IPs using FPGA CAD tools","authors":"Vincent Mirian, P. Chow","doi":"10.1145/2902961.2903033","DOIUrl":"https://doi.org/10.1145/2902961.2903033","url":null,"abstract":"In today's competitive market, a company's success is strongly dependent on delivering sophisticated and state-of-the-art IPs prior to their competitors. To take a short cut, a company may resort to reverse engineering or pirating their competitor's IP. In this paper, we examine the feasibility of extracting the design of a secure IP from one technology and using it in another. In particular, we start by extracting the IP from an FPGA vendor tool flow and map the IP blocks to an ASIC technology. We show that there is not a significant degradation in quality compared to starting with the original source, thus showing that taking a pirated IP from an FPGA and using it in another technology is viable, and therefore worth doing. This demonstrates a clear motivation for patching a vulnerability in FPGA CAD tools. Note that the intent of this work is not to promote the piracy of IPs. Instead, the goal is to demonstrate a mechanism for extracting a design as a means towards understanding what methods of pirating are possible, and whether they can be prevented.","PeriodicalId":407054,"journal":{"name":"2016 International Great Lakes Symposium on VLSI (GLSVLSI)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114974162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
期刊
2016 International Great Lakes Symposium on VLSI (GLSVLSI)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1