Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563975
P. Sharps, M. Timmons, S. Messenger, H. Cotal, G. Summers, P. Iles
Both n/p and p/n InP thick emitter (0.3 /spl mu/m) space solar cells with and without Ga/sub 0.5/In/sub 0.5/P windows are studied. Both polarity cells are considered for possible growth on Ge. While not achieving the high efficiencies of thin emitter InP cells, the thicker emitter cells may provide an advantage in radiation hardness. The Ga/sub 0.5/In/sub 0.5/P window has little effect on cell performance, for either polarity.
{"title":"Development of p/n and n/p thick emitter InP solar cells","authors":"P. Sharps, M. Timmons, S. Messenger, H. Cotal, G. Summers, P. Iles","doi":"10.1109/PVSC.1996.563975","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563975","url":null,"abstract":"Both n/p and p/n InP thick emitter (0.3 /spl mu/m) space solar cells with and without Ga/sub 0.5/In/sub 0.5/P windows are studied. Both polarity cells are considered for possible growth on Ge. While not achieving the high efficiencies of thin emitter InP cells, the thicker emitter cells may provide an advantage in radiation hardness. The Ga/sub 0.5/In/sub 0.5/P window has little effect on cell performance, for either polarity.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133904177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564001
P. Stella, R. Ross, B.S. Smith, G. Glenn, K.S. Sharmit
The MGS mission is one of the first major planetary missions conducted under the new NASA Faster, Better, Cheaper guidelines. Ironically, mission requirements make the MGS solar array one of the most challenging designs built for NASA. Not only will the array include silicon and GaAs/Ge panels, but the solar array will be used to aerobrake the spacecraft in the upper regions of the Martian atmosphere. Consequently, even though a mission to Mars is normally typified by cold temperatures, aerobraking imposes a high temperature requirement of nearly 180/spl deg/C, higher than that experienced by any previous array. The array size is tightly constrained by mass and area. Since the aerobraking occurs early in the mission, it is necessary to subsequently survive up to 20000 lower temperature thermal cycles. Furthermore, the location of a magnetometer directly on the array structure requires the minimization of circuit induced magnetic moments. This paper provides an overview of the array design and performance. In addition, the high temperature capable design and development are discussed in detail.
{"title":"Mars Global Surveyor (MGS) high temperature survival solar array","authors":"P. Stella, R. Ross, B.S. Smith, G. Glenn, K.S. Sharmit","doi":"10.1109/PVSC.1996.564001","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564001","url":null,"abstract":"The MGS mission is one of the first major planetary missions conducted under the new NASA Faster, Better, Cheaper guidelines. Ironically, mission requirements make the MGS solar array one of the most challenging designs built for NASA. Not only will the array include silicon and GaAs/Ge panels, but the solar array will be used to aerobrake the spacecraft in the upper regions of the Martian atmosphere. Consequently, even though a mission to Mars is normally typified by cold temperatures, aerobraking imposes a high temperature requirement of nearly 180/spl deg/C, higher than that experienced by any previous array. The array size is tightly constrained by mass and area. Since the aerobraking occurs early in the mission, it is necessary to subsequently survive up to 20000 lower temperature thermal cycles. Furthermore, the location of a magnetometer directly on the array structure requires the minimization of circuit induced magnetic moments. This paper provides an overview of the array design and performance. In addition, the high temperature capable design and development are discussed in detail.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133549630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564271
A. Gabor, J. Britt, A.E. Delahoy, R. Noufi, Z. Kiss
The authors have developed suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in large-scale manufacturing equipment. Total-area solar cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub OC/ uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The fill factor of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.
{"title":"Manufacturing-compatible methods for the formation of Cu(In,Ga)Se/sub 2/ thin films","authors":"A. Gabor, J. Britt, A.E. Delahoy, R. Noufi, Z. Kiss","doi":"10.1109/PVSC.1996.564271","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564271","url":null,"abstract":"The authors have developed suitable methods of Cu(In,Ga)Se/sub 2/ thin-film formation for application in large-scale manufacturing equipment. Total-area solar cell efficiencies as high as 13.9% have been achieved on small-area cells by these methods. Large-area film thickness and V/sub OC/ uniformity data are also presented. The film formation involves sequential deposition of compound selenides, Se, and Cu. The fill factor of some devices was improved by deposition of a thin terminal In-Se layer, and surface modification by chemical treatments also improved device performance.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122820675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564015
V. Andreev, V. Lantratov, V. Larionov, V. Rumyantsev, M. Shvarts
A practical design has been developed for string-type PV receivers intended to operate in space application line-focus concentrator modules. MOCVD grown AlGaAs/GaAs solar cells are used in these receivers as the main elements whereas Zn-diffused GaSb solar cells are used in tandem to improve total efficiency. Secondary cylindrical lenses operating similar to a "large scale prismatic cover" and transforming a focal light line into separated spots are introduced on the surfaces of solar cells. Efficiency 18.3% (AM0, 15 Suns, RT) has been measured on the receiver 72 mm long constructed from twelve series-connected AlGaAs/GaAs solar cells.
{"title":"Development of PV receivers for space line-focus concentrator modules","authors":"V. Andreev, V. Lantratov, V. Larionov, V. Rumyantsev, M. Shvarts","doi":"10.1109/PVSC.1996.564015","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564015","url":null,"abstract":"A practical design has been developed for string-type PV receivers intended to operate in space application line-focus concentrator modules. MOCVD grown AlGaAs/GaAs solar cells are used in these receivers as the main elements whereas Zn-diffused GaSb solar cells are used in tandem to improve total efficiency. Secondary cylindrical lenses operating similar to a \"large scale prismatic cover\" and transforming a focal light line into separated spots are introduced on the surfaces of solar cells. Efficiency 18.3% (AM0, 15 Suns, RT) has been measured on the receiver 72 mm long constructed from twelve series-connected AlGaAs/GaAs solar cells.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117252735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564016
V. Grilikhes, V. Rumyantsev, M. Shvarts
The use of a high-efficiency space concentrator photovoltaic (PV) modules requires a development of the testing methods and a measuring equipment for their laboratory inspection. In this case it is necessary to take into account the specific behaviour of module elements under operating conditions as well as interaction between optical and electrogenerating parts. The aim of this work is to develop the laboratory (indoor) testing procedure for concentrator PV modules, to predict their characteristics during the space flight experiment, to apply the developed methods to the lens concentrator PV modules and to check indoor results in preliminary terrestrial (outdoor) experiment.
{"title":"Indoor and outdoor testing of space concentrator AlGaAs/GaAs photovoltaic modules with Fresnel lenses","authors":"V. Grilikhes, V. Rumyantsev, M. Shvarts","doi":"10.1109/PVSC.1996.564016","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564016","url":null,"abstract":"The use of a high-efficiency space concentrator photovoltaic (PV) modules requires a development of the testing methods and a measuring equipment for their laboratory inspection. In this case it is necessary to take into account the specific behaviour of module elements under operating conditions as well as interaction between optical and electrogenerating parts. The aim of this work is to develop the laboratory (indoor) testing procedure for concentrator PV modules, to predict their characteristics during the space flight experiment, to apply the developed methods to the lens concentrator PV modules and to check indoor results in preliminary terrestrial (outdoor) experiment.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116554665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.563962
Chen Mingbo, Zhang Zhongwei
To meet the requirements of space power use, the authors developed a new multiwafer LPE technique. This technique applied a squeezing multiwafer graphite boat, with 50 wafers (2.3/spl times/2.3 cm/sup 2/) or 20 wafers (2.3/spl times/ 4.3 cm/sup 2/) produced at each epitaxial growth. They focused on the control technique for the epitaxial layers' parameters. Experimental results demonstrated that epitaxial growth at low temperature could produce ideal GaAs solar cells with good repeatability. To date, the efficiencies of GaAs solar cells prepared by this technique have reached 18.6% (2/spl times/2 cm/sup 2/, AMO) and 18.39% (2/spl times/4 cm/sup 2/, AMO), respectively. Average efficiency of the cells prepared in a small lot is 17.5% (AMO), and all the samples were qualified in space environment simulation tests.
{"title":"Development of the GaAs solar cell for space application","authors":"Chen Mingbo, Zhang Zhongwei","doi":"10.1109/PVSC.1996.563962","DOIUrl":"https://doi.org/10.1109/PVSC.1996.563962","url":null,"abstract":"To meet the requirements of space power use, the authors developed a new multiwafer LPE technique. This technique applied a squeezing multiwafer graphite boat, with 50 wafers (2.3/spl times/2.3 cm/sup 2/) or 20 wafers (2.3/spl times/ 4.3 cm/sup 2/) produced at each epitaxial growth. They focused on the control technique for the epitaxial layers' parameters. Experimental results demonstrated that epitaxial growth at low temperature could produce ideal GaAs solar cells with good repeatability. To date, the efficiencies of GaAs solar cells prepared by this technique have reached 18.6% (2/spl times/2 cm/sup 2/, AMO) and 18.39% (2/spl times/4 cm/sup 2/, AMO), respectively. Average efficiency of the cells prepared in a small lot is 17.5% (AMO), and all the samples were qualified in space environment simulation tests.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564211
F. Faller, N. Schillinger, A. Hurrle, C. Schetter, A. Eyer
Silicon films 40-90 /spl mu/m thick were epitaxially deposited on fast-grown mc-SSP pre-ribbons. Special attention was focused on the design of the authors' self-constructed CVD system. It is principally convertable into a conveyer-belt system for a high continuous throughput, which is needed to be economically competitive. With high deposition rates of up to 10 /spl mu/m/min, the epi-layers revealed diffusion lengths of 250 /spl mu/m on <100>-Cz substrates, 150 /spl mu/m on SILSO and 11-30 /spl mu/m on SSP pre-ribbons (all substrates highly doped). Solar cells were manufactured using the authors' standard cell process. No passivation or gettering steps were performed and no texturing was applied. Solar cell efficiencies of 12.8% on Cz, 11.1% on SILSO wafers and 6.1% on SSP were achieved.
{"title":"Mc-Si thin film solar cells by fast CVD on low cost SSP pre-ribbons","authors":"F. Faller, N. Schillinger, A. Hurrle, C. Schetter, A. Eyer","doi":"10.1109/PVSC.1996.564211","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564211","url":null,"abstract":"Silicon films 40-90 /spl mu/m thick were epitaxially deposited on fast-grown mc-SSP pre-ribbons. Special attention was focused on the design of the authors' self-constructed CVD system. It is principally convertable into a conveyer-belt system for a high continuous throughput, which is needed to be economically competitive. With high deposition rates of up to 10 /spl mu/m/min, the epi-layers revealed diffusion lengths of 250 /spl mu/m on <100>-Cz substrates, 150 /spl mu/m on SILSO and 11-30 /spl mu/m on SSP pre-ribbons (all substrates highly doped). Solar cells were manufactured using the authors' standard cell process. No passivation or gettering steps were performed and no texturing was applied. Solar cell efficiencies of 12.8% on Cz, 11.1% on SILSO wafers and 6.1% on SSP were achieved.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564277
D. Levi, B. Fluegel, R. Ahrenkiel, A. Compaan, L. Woods
Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. We utilize the complimentary techniques of femtosecond time-resolved differential absorption (TRDA) and picosecond time-resolved photoluminescence (TRPL) to determine the relaxation and recombination mechanisms in these films. Comparison between samples with systematic variations in their CdS layers leads to several conclusions. Photoexcited holes are very rapidly captured by deep traps where they remain until recombining with electrons in shallow traps. The hole trapping states are most likely produced by tellurium substituting for sulfur in the CdS lattice. We postulate that reduction of tellurium diffusion into CdS during growth may increase the spectral response of CdTe/CdS solar cells for photon energies above 2.5 eV by reducing or eliminating these defect sites.
{"title":"Dynamics of photoexcited carrier relaxation and recombination in CdTe/CdS thin films","authors":"D. Levi, B. Fluegel, R. Ahrenkiel, A. Compaan, L. Woods","doi":"10.1109/PVSC.1996.564277","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564277","url":null,"abstract":"Efficiency-limiting defects in photovoltaic devices are readily probed by time-resolved spectroscopy. This paper presents the first direct optical measurements of the relaxation and recombination pathways of photoexcited carriers in the CdS window layer of CdTe/CdS polycrystalline thin films. We utilize the complimentary techniques of femtosecond time-resolved differential absorption (TRDA) and picosecond time-resolved photoluminescence (TRPL) to determine the relaxation and recombination mechanisms in these films. Comparison between samples with systematic variations in their CdS layers leads to several conclusions. Photoexcited holes are very rapidly captured by deep traps where they remain until recombining with electrons in shallow traps. The hole trapping states are most likely produced by tellurium substituting for sulfur in the CdS lattice. We postulate that reduction of tellurium diffusion into CdS during growth may increase the spectral response of CdTe/CdS solar cells for photon energies above 2.5 eV by reducing or eliminating these defect sites.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117050640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564236
A. Rohatgi, S. Narasimha, S. Kamra, P. Doshi, C. Khattak, K. Emery, H. Field
Solar cells with efficiencies as high as 18.6% (1 cm/sup 2/ area) have been achieved by a process which involves impurity gettering and effective back surface passivation on 0.65 /spl Omega/-cm multicrystalline silicon (mc-Si) grown by the heat exchanger method (HEM). This represents the highest reported solar cell efficiency on mc-Si to date. PCD analysis revealed that the bulk lifetime (/spl tau//sub b/) in HEM samples after phosphorus gettering can be as high as 135 /spl mu/s. This increases the impact of the back surface recombination velocity (S/sub b/) on the solar cell performance. By incorporating a deeper aluminum BSF, the S/sub b/ for solar cells in this study was lowered from 10000 cm/s to 2000 cm/s on HEM mc-Si. This combination of high /spl tau//sub b/ and moderately low S/sub b/ resulted in the record high efficiency mc-Si solar cell. Model calculations indicate that lowering S/sub b/ further can raise the efficiency of untextured HEM mc-Si solar cells above 19.0%, thus closing the efficiency gap between good quality, untextured single crystal and mc-Si solar cells.
{"title":"Record high 18.6% efficient solar cell on HEM multicrystalline material","authors":"A. Rohatgi, S. Narasimha, S. Kamra, P. Doshi, C. Khattak, K. Emery, H. Field","doi":"10.1109/PVSC.1996.564236","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564236","url":null,"abstract":"Solar cells with efficiencies as high as 18.6% (1 cm/sup 2/ area) have been achieved by a process which involves impurity gettering and effective back surface passivation on 0.65 /spl Omega/-cm multicrystalline silicon (mc-Si) grown by the heat exchanger method (HEM). This represents the highest reported solar cell efficiency on mc-Si to date. PCD analysis revealed that the bulk lifetime (/spl tau//sub b/) in HEM samples after phosphorus gettering can be as high as 135 /spl mu/s. This increases the impact of the back surface recombination velocity (S/sub b/) on the solar cell performance. By incorporating a deeper aluminum BSF, the S/sub b/ for solar cells in this study was lowered from 10000 cm/s to 2000 cm/s on HEM mc-Si. This combination of high /spl tau//sub b/ and moderately low S/sub b/ resulted in the record high efficiency mc-Si solar cell. Model calculations indicate that lowering S/sub b/ further can raise the efficiency of untextured HEM mc-Si solar cells above 19.0%, thus closing the efficiency gap between good quality, untextured single crystal and mc-Si solar cells.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115205356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564340
B. Crone, A. Payne, S. Wagner
A 200 /spl mu/m thick fully glass-encapsulated a-Si:H solar cell is demonstrated. The cell structure is 75 /spl mu/m glass foil superstrate/a-Si,N:H diffusion barrier/specular ZnO:Al/a-Si:H pin solar cell/Al. The solar cell is encapsulated with 50 /spl mu/m ethylene vinyl acetate (EVA) and another 75 /spl mu/m glass foil. The current-voltage characteristics of a 0.24 cm/sup 2/ cell measured under AM1.5 (100 mW/cm/sup 2/) light give V/sub OC/=0.83 V, J/sub SC/=11.1 mA/cm/sup 2/, and FF=0.61, for an initial efficiency of 5.6%.
{"title":"200 /spl mu/m thick encapsulated amorphous silicon solar cells","authors":"B. Crone, A. Payne, S. Wagner","doi":"10.1109/PVSC.1996.564340","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564340","url":null,"abstract":"A 200 /spl mu/m thick fully glass-encapsulated a-Si:H solar cell is demonstrated. The cell structure is 75 /spl mu/m glass foil superstrate/a-Si,N:H diffusion barrier/specular ZnO:Al/a-Si:H pin solar cell/Al. The solar cell is encapsulated with 50 /spl mu/m ethylene vinyl acetate (EVA) and another 75 /spl mu/m glass foil. The current-voltage characteristics of a 0.24 cm/sup 2/ cell measured under AM1.5 (100 mW/cm/sup 2/) light give V/sub OC/=0.83 V, J/sub SC/=11.1 mA/cm/sup 2/, and FF=0.61, for an initial efficiency of 5.6%.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115563434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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