Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564028
C. Honsberg, S. Ghozati, A. Ebong, Y. Tang, S. Wenham
Floating junction (FJ) passivation is a relatively recent passivation scheme which has both experimentally and theoretically demonstrated superior passivation than either oxide or back surface field passivation. In addition, it is suited not only to high efficiency laboratory cells, but also to commercial solar cells. The improvement in surface passivation for commercial cells is an especially critical issue in achieving lower cost solar cells through reducing substrate thickness while simultaneously increasing efficiency. Despite the many advantages of FJ passivation, its applicability has been limited by the apparent inability to translate the excellent modelling results into actual solar cells. The objective of this paper is to present a complete analysis of FJ passivation and to demonstrate a method by which the problems with FJ passivation can be eliminated. Experimental evidence as well as theoretical modelling demonstrates that a solar cell with an optimized rear FJ is insensitive to parasitic effects.
{"title":"Elimination of parasitic effects in floating junction rear surface passivation for solar cells","authors":"C. Honsberg, S. Ghozati, A. Ebong, Y. Tang, S. Wenham","doi":"10.1109/PVSC.1996.564028","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564028","url":null,"abstract":"Floating junction (FJ) passivation is a relatively recent passivation scheme which has both experimentally and theoretically demonstrated superior passivation than either oxide or back surface field passivation. In addition, it is suited not only to high efficiency laboratory cells, but also to commercial solar cells. The improvement in surface passivation for commercial cells is an especially critical issue in achieving lower cost solar cells through reducing substrate thickness while simultaneously increasing efficiency. Despite the many advantages of FJ passivation, its applicability has been limited by the apparent inability to translate the excellent modelling results into actual solar cells. The objective of this paper is to present a complete analysis of FJ passivation and to demonstrate a method by which the problems with FJ passivation can be eliminated. Experimental evidence as well as theoretical modelling demonstrates that a solar cell with an optimized rear FJ is insensitive to parasitic effects.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115545352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564031
Jan Schmidt, T. Lauinger, Armin G. Aberle, R. Hezel
In this paper, the lowest ever reported effective surface recombination velocities S/sub eff/ on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375/spl deg/C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-/spl Omega/cm p-Si wafers, an extremely low S/sub eff/ value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged S/sub eff/ values as low as 135 cm/s.
{"title":"Record low surface recombination velocities on low-resistivity silicon solar cell substrates","authors":"Jan Schmidt, T. Lauinger, Armin G. Aberle, R. Hezel","doi":"10.1109/PVSC.1996.564031","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564031","url":null,"abstract":"In this paper, the lowest ever reported effective surface recombination velocities S/sub eff/ on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375/spl deg/C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-/spl Omega/cm p-Si wafers, an extremely low S/sub eff/ value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged S/sub eff/ values as low as 135 cm/s.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121283396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564020
S. Kurtz, M. O'neill
Although previous studies have measured and calculated solar cell chromatic aberration losses and proposed methods for reducing these by modifying the optics, significant work remains to be done toward understanding how to quantify the losses and how various parameters affect this loss. This paper presents an analytical definition and calculation method for chromatic aberration losses in Ga/sub 0.5/In/sub 0.5/P/GaAs solar cells. The effects of sheet resistance of the midlayers of the cell, total irradiance, incident spectrum, cell width and diode quality factor are studied. A method for measuring the midlayer resistance in finished solar cells is also described.
虽然以前的研究已经测量和计算了太阳能电池色差损失，并提出了通过修改光学来减少这些损失的方法，但在了解如何量化损失以及各种参数如何影响这种损失方面仍有重要的工作要做。本文给出了Ga/sub 0.5/ in /sub 0.5/P/GaAs太阳能电池色差损耗的解析定义和计算方法。研究了电池中间层的片电阻、总辐照度、入射光谱、电池宽度和二极管质量因子等因素的影响。本文还描述了一种测量成品太阳能电池中间层电阻的方法。
{"title":"Estimating and controlling chromatic aberration losses for two-junction, two-terminal devices in refractive concentrator systems","authors":"S. Kurtz, M. O'neill","doi":"10.1109/PVSC.1996.564020","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564020","url":null,"abstract":"Although previous studies have measured and calculated solar cell chromatic aberration losses and proposed methods for reducing these by modifying the optics, significant work remains to be done toward understanding how to quantify the losses and how various parameters affect this loss. This paper presents an analytical definition and calculation method for chromatic aberration losses in Ga/sub 0.5/In/sub 0.5/P/GaAs solar cells. The effects of sheet resistance of the midlayers of the cell, total irradiance, incident spectrum, cell width and diode quality factor are studied. A method for measuring the midlayer resistance in finished solar cells is also described.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123641599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564205
S. Sivoththaman, W. Laureys, P. de Schepper, J. Nijs, R. Mertens
100 cm/sup 2/ n/sup +/pp/sup +/ solar cells have been fabricated by rapid thermal processing (RTP) on conventionally cast (CC) and electromagnetically cast (EMC) multicrystalline silicon (mc-Si). All thermal steps were carried out by fast-ramp (>30/spl deg/C/s) RTP using tungsten-halogen lamps. Emitter and BSF were simultaneously formed by RTP co-diffusion of phosphorous and boron/or aluminum (50-60 seconds) and surface passivation by rapid thermal oxidation, RTO (40-50 seconds). The all-RTP process resulted in 14.1% and 13.3% efficient cells on CC and EMC mc-Si respectively. The EMC cells, when subjected to an additional plasma hydrogen treatment, improved to give the same efficiency as the CC mc-Si cells. Systematic lifetime measurements performed on these materials show that the degradation in the EMC mc-Si is mainly due to the activated crystallographic defects, responding favourably to hydrogenation treatments but poorly to RT-gettering treatments. On the other hand, significant gettering effects are observed in CC mc-Si.
{"title":"Rapid thermal processing of conventionally and electromagnetically cast 100 cm/sup 2/ multicrystalline silicon","authors":"S. Sivoththaman, W. Laureys, P. de Schepper, J. Nijs, R. Mertens","doi":"10.1109/PVSC.1996.564205","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564205","url":null,"abstract":"100 cm/sup 2/ n/sup +/pp/sup +/ solar cells have been fabricated by rapid thermal processing (RTP) on conventionally cast (CC) and electromagnetically cast (EMC) multicrystalline silicon (mc-Si). All thermal steps were carried out by fast-ramp (>30/spl deg/C/s) RTP using tungsten-halogen lamps. Emitter and BSF were simultaneously formed by RTP co-diffusion of phosphorous and boron/or aluminum (50-60 seconds) and surface passivation by rapid thermal oxidation, RTO (40-50 seconds). The all-RTP process resulted in 14.1% and 13.3% efficient cells on CC and EMC mc-Si respectively. The EMC cells, when subjected to an additional plasma hydrogen treatment, improved to give the same efficiency as the CC mc-Si cells. Systematic lifetime measurements performed on these materials show that the degradation in the EMC mc-Si is mainly due to the activated crystallographic defects, responding favourably to hydrogenation treatments but poorly to RT-gettering treatments. On the other hand, significant gettering effects are observed in CC mc-Si.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123406975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564007
N. Kim, M.A. Vemvyvelt, M. Thompson, K. Coates
Environmental test results performed with chemically thinned, lightweight CuInSe/sub 2/ (CIS) space power solar cells are presented. CIS solar cells, which were fabricated by a chemical thinning process after CIS device structures had been formed on thick substrates, produced high efficiency devices. Pyroshock/random vibration, off-angle and thermal cycling tests were conducted with test conditions matching or exceeding the requirement for the PASP Plus space flight experiment. All phases of testing were monitored and produced favorable results. Electrical performance and physical inspection confirm its viability for space power applications. Environmental test procedures as well as the test results obtained are described in detail.
{"title":"Environmental testing of chemically thinned, lightweight CuInSe/sub 2/ solar cells","authors":"N. Kim, M.A. Vemvyvelt, M. Thompson, K. Coates","doi":"10.1109/PVSC.1996.564007","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564007","url":null,"abstract":"Environmental test results performed with chemically thinned, lightweight CuInSe/sub 2/ (CIS) space power solar cells are presented. CIS solar cells, which were fabricated by a chemical thinning process after CIS device structures had been formed on thick substrates, produced high efficiency devices. Pyroshock/random vibration, off-angle and thermal cycling tests were conducted with test conditions matching or exceeding the requirement for the PASP Plus space flight experiment. All phases of testing were monitored and produced favorable results. Electrical performance and physical inspection confirm its viability for space power applications. Environmental test procedures as well as the test results obtained are described in detail.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128638469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564013
R. Dally, J.R. Kululka, J. Schwartz
Bypass diodes are integrated onto GaAs/Ge solar cells by selectively thinning a pocket into the backside of the solar cell's germanium substrate, electrically connecting the two devices via insulated metal foil tabs (Ag, Ag/Kovar or Ag/Mo) attached by thermal compression bonding (welding) and/or soldering and bonding the 3 mm thick silicon diode chip into the germanium pocket with a standard space qualified adhesive. This efficient and synergistic method of integration maintains the modularity of the solar cell unit, minimizes active area obscuration, heat sinks the diode and eliminates the need for discrete bypass diode wiring at the solar panel level. The approach is also applicable to future high efficiency, multijunction solar cells. Qualification status, performance results and manufacturing capabilities are discussed.
{"title":"The design, qualification and use of bypass diode integration onto GaAs/Ge solar cells","authors":"R. Dally, J.R. Kululka, J. Schwartz","doi":"10.1109/PVSC.1996.564013","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564013","url":null,"abstract":"Bypass diodes are integrated onto GaAs/Ge solar cells by selectively thinning a pocket into the backside of the solar cell's germanium substrate, electrically connecting the two devices via insulated metal foil tabs (Ag, Ag/Kovar or Ag/Mo) attached by thermal compression bonding (welding) and/or soldering and bonding the 3 mm thick silicon diode chip into the germanium pocket with a standard space qualified adhesive. This efficient and synergistic method of integration maintains the modularity of the solar cell unit, minimizes active area obscuration, heat sinks the diode and eliminates the need for discrete bypass diode wiring at the solar panel level. The approach is also applicable to future high efficiency, multijunction solar cells. Qualification status, performance results and manufacturing capabilities are discussed.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128783391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564337
T. Ikeda, G. Ganguly, A. Matsuda
The authors' results suggest that under conditions where the contribution of short lifetime radicals to growth has been minimized, the factors limiting further improvement of a-SiGe:H are (a) the low mobility of the Ge related precursor and (b) loss of surface hydrogen coverage due to rapid desorption from Ge-H sites. Therefore, preparing high quality a-SiGe:H requires high temperatures for increasing the precursor mobility and high deposition rates for reducing the effective hydrogen desorption rate.
{"title":"Factors limiting further improvement of a-SiGe:H","authors":"T. Ikeda, G. Ganguly, A. Matsuda","doi":"10.1109/PVSC.1996.564337","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564337","url":null,"abstract":"The authors' results suggest that under conditions where the contribution of short lifetime radicals to growth has been minimized, the factors limiting further improvement of a-SiGe:H are (a) the low mobility of the Ge related precursor and (b) loss of surface hydrogen coverage due to rapid desorption from Ge-H sites. Therefore, preparing high quality a-SiGe:H requires high temperatures for increasing the precursor mobility and high deposition rates for reducing the effective hydrogen desorption rate.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128981893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564216
K. Shreve, L. C. Dinetta, J. Cotter, J. Bower, T. R. Ruffins, A. Barnett
This technology is based on AstroPower's electrostatic bonding and silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and processed to form the monolithically interconnected devices. These devices can be tailored for space and terrestrial applications. The costs of the monolithic interconnection compare favorably to labor intensive, conventionally strung solar cell arrays. Voltage and current outputs can be varied without varying the number of fabrication steps. Prototypes have demonstrated efficiencies greater than 11%. The monolithic approach has a number of inherent advantages for space and terrestrial photovoltaic products.
{"title":"Initial results for the silicon monolithically interconnected solar cell product","authors":"K. Shreve, L. C. Dinetta, J. Cotter, J. Bower, T. R. Ruffins, A. Barnett","doi":"10.1109/PVSC.1996.564216","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564216","url":null,"abstract":"This technology is based on AstroPower's electrostatic bonding and silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and processed to form the monolithically interconnected devices. These devices can be tailored for space and terrestrial applications. The costs of the monolithic interconnection compare favorably to labor intensive, conventionally strung solar cell arrays. Voltage and current outputs can be varied without varying the number of fabrication steps. Prototypes have demonstrated efficiencies greater than 11%. The monolithic approach has a number of inherent advantages for space and terrestrial photovoltaic products.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129593487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564347
J.-H. Zhao, A. Wang, E. Abbaspour-Sani, F. Yun, M. Green, D. King
This paper reports a recent result of 22.3% solar cell module efficiency independently confirmed at Sandia National Laboratories. This is the highest confirmed module efficiency for a module of this size achieved by solar cells made on any material. Modified double layer antireflection coated PERL (passivated emitter, rear locally-diffused) solar cells of 23% efficiency are used in this module. This double layer coating, together with the redesigned solar cell structure and a shingled encapsulation technique, considerably contributed to this efficiency improvement.
{"title":"22.3% efficient silicon solar cell module","authors":"J.-H. Zhao, A. Wang, E. Abbaspour-Sani, F. Yun, M. Green, D. King","doi":"10.1109/PVSC.1996.564347","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564347","url":null,"abstract":"This paper reports a recent result of 22.3% solar cell module efficiency independently confirmed at Sandia National Laboratories. This is the highest confirmed module efficiency for a module of this size achieved by solar cells made on any material. Modified double layer antireflection coated PERL (passivated emitter, rear locally-diffused) solar cells of 23% efficiency are used in this module. This double layer coating, together with the redesigned solar cell structure and a shingled encapsulation technique, considerably contributed to this efficiency improvement.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130466685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564018
D. Allen, P. Jones, D. Murphy, M. Piszczor
In recent years, spacecraft power levels have continued to grow, accelerating the evolution towards higher efficiency photovoltaic devices. Light concentrating arrays enable the cost-effective implementation of recently developed high-efficiency solar cells while providing high array efficiency, protection from space radiation effects and plasma interaction minimization for high voltage arrays. The line-focus concentrator concept delivers two added advantages: (1) low-cost mass production of the lens material; and (2) relaxation of precise array tracking requirements to only a single axis. New array designs emphasize lightweight, high stiffness, stow-ability, and ease of manufacture and assembly. In this paper, the authors address the current status of the SCARLET (solar concentrator array with refractive linear element technology) concentrator program with special emphasis on cost and mass performance trade-offs versus cell type and Sun tracking capability.
{"title":"The SCARLET light concentrating solar array","authors":"D. Allen, P. Jones, D. Murphy, M. Piszczor","doi":"10.1109/PVSC.1996.564018","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564018","url":null,"abstract":"In recent years, spacecraft power levels have continued to grow, accelerating the evolution towards higher efficiency photovoltaic devices. Light concentrating arrays enable the cost-effective implementation of recently developed high-efficiency solar cells while providing high array efficiency, protection from space radiation effects and plasma interaction minimization for high voltage arrays. The line-focus concentrator concept delivers two added advantages: (1) low-cost mass production of the lens material; and (2) relaxation of precise array tracking requirements to only a single axis. New array designs emphasize lightweight, high stiffness, stow-ability, and ease of manufacture and assembly. In this paper, the authors address the current status of the SCARLET (solar concentrator array with refractive linear element technology) concentrator program with special emphasis on cost and mass performance trade-offs versus cell type and Sun tracking capability.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130850375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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