Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564230
F. Giles, R. J. Schwartz
Photoconductance decay measurements are frequently used to measure the lifetime of silicon wafers prior to processing and occasionally after various processing steps have been performed. It is an easy to use rapid measurement. However, the usual analysis of the data results in a determination of an "effective" lifetime which includes the effects of both bulk and surface recombination. This paper describes the measurement conditions and the analysis procedures which allow one to analyze photoconductance decay data to obtain the bulk lifetime and the surface recombination of the two surfaces rather than just the "effective" lifetime. Since the technique is contactless and does not require any additional processing or modification of the wafer, it is particularly promising as a process monitoring tool.
{"title":"A technique for separating bulk and surface lifetimes in the analysis of photoconductance decay measurements","authors":"F. Giles, R. J. Schwartz","doi":"10.1109/PVSC.1996.564230","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564230","url":null,"abstract":"Photoconductance decay measurements are frequently used to measure the lifetime of silicon wafers prior to processing and occasionally after various processing steps have been performed. It is an easy to use rapid measurement. However, the usual analysis of the data results in a determination of an \"effective\" lifetime which includes the effects of both bulk and surface recombination. This paper describes the measurement conditions and the analysis procedures which allow one to analyze photoconductance decay data to obtain the bulk lifetime and the surface recombination of the two surfaces rather than just the \"effective\" lifetime. Since the technique is contactless and does not require any additional processing or modification of the wafer, it is particularly promising as a process monitoring tool.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128068329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564361
W. Holley, S. Agro, J. Galica, R.S. Yorgensen
Development work on EVA-based PV encapsulants has yielded three strategies to limit photothermal browning. (1) Use of one of four new EVA-based encapsulants-"standard-cure" X9903P, X9923P, or X9933P, or "fast-cure" X15303P. After 38-42 weeks in a Weather-Ometer, sample laminates using Starphire glass, which is highly transparent in the UV-B region, developed ASTM D-1925 Yellowness Indexes of 2.1-4.5. (2) Use of cerium-oxide-containing glass superstrates, especially with an existing encapsulant, "fast-cure" 15295P. After one year in the Weather-Ometer, sample laminates registered a Yellowness Index of 13. A 15295P control with noncerium glass had an index of 87. Similarly, samples with cerium-oxide-containing glass subjected to 15 months of EMMA accelerated outdoor exposure showed almost no measurable yellowness, while controls had a 4.2 Index. A control prepared with "standard-cure" A9918P and noncerium glass registered a 34.5 Index. (3) Use of an optically transparent, gas-transmissive superstrate in place of glass. After 60 weeks exposure in the Weather-Ometer, a Tefzel/A9918P encapsulant/glass laminate had a Yellowness Index of 2.0. Samples subjected to 15 months of EMMA showed no measurable yellowing. Mini-modules were then prepared, using six different combinations of the four experimental encapsulants, plus controls with low-iron glass, cerium-containing glass, or Tefzel superstrates. These are being aged in the Weather-Ometer, with additional sets sent to Phoenix for EMMA exposure.
{"title":"UV stability and module testing of nonbrowning experimental PV encapsulants","authors":"W. Holley, S. Agro, J. Galica, R.S. Yorgensen","doi":"10.1109/PVSC.1996.564361","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564361","url":null,"abstract":"Development work on EVA-based PV encapsulants has yielded three strategies to limit photothermal browning. (1) Use of one of four new EVA-based encapsulants-\"standard-cure\" X9903P, X9923P, or X9933P, or \"fast-cure\" X15303P. After 38-42 weeks in a Weather-Ometer, sample laminates using Starphire glass, which is highly transparent in the UV-B region, developed ASTM D-1925 Yellowness Indexes of 2.1-4.5. (2) Use of cerium-oxide-containing glass superstrates, especially with an existing encapsulant, \"fast-cure\" 15295P. After one year in the Weather-Ometer, sample laminates registered a Yellowness Index of 13. A 15295P control with noncerium glass had an index of 87. Similarly, samples with cerium-oxide-containing glass subjected to 15 months of EMMA accelerated outdoor exposure showed almost no measurable yellowness, while controls had a 4.2 Index. A control prepared with \"standard-cure\" A9918P and noncerium glass registered a 34.5 Index. (3) Use of an optically transparent, gas-transmissive superstrate in place of glass. After 60 weeks exposure in the Weather-Ometer, a Tefzel/A9918P encapsulant/glass laminate had a Yellowness Index of 2.0. Samples subjected to 15 months of EMMA showed no measurable yellowing. Mini-modules were then prepared, using six different combinations of the four experimental encapsulants, plus controls with low-iron glass, cerium-containing glass, or Tefzel superstrates. These are being aged in the Weather-Ometer, with additional sets sent to Phoenix for EMMA exposure.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"48 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128528958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564007
N. Kim, M.A. Vemvyvelt, M. Thompson, K. Coates
Environmental test results performed with chemically thinned, lightweight CuInSe/sub 2/ (CIS) space power solar cells are presented. CIS solar cells, which were fabricated by a chemical thinning process after CIS device structures had been formed on thick substrates, produced high efficiency devices. Pyroshock/random vibration, off-angle and thermal cycling tests were conducted with test conditions matching or exceeding the requirement for the PASP Plus space flight experiment. All phases of testing were monitored and produced favorable results. Electrical performance and physical inspection confirm its viability for space power applications. Environmental test procedures as well as the test results obtained are described in detail.
{"title":"Environmental testing of chemically thinned, lightweight CuInSe/sub 2/ solar cells","authors":"N. Kim, M.A. Vemvyvelt, M. Thompson, K. Coates","doi":"10.1109/PVSC.1996.564007","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564007","url":null,"abstract":"Environmental test results performed with chemically thinned, lightweight CuInSe/sub 2/ (CIS) space power solar cells are presented. CIS solar cells, which were fabricated by a chemical thinning process after CIS device structures had been formed on thick substrates, produced high efficiency devices. Pyroshock/random vibration, off-angle and thermal cycling tests were conducted with test conditions matching or exceeding the requirement for the PASP Plus space flight experiment. All phases of testing were monitored and produced favorable results. Electrical performance and physical inspection confirm its viability for space power applications. Environmental test procedures as well as the test results obtained are described in detail.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128638469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564018
D. Allen, P. Jones, D. Murphy, M. Piszczor
In recent years, spacecraft power levels have continued to grow, accelerating the evolution towards higher efficiency photovoltaic devices. Light concentrating arrays enable the cost-effective implementation of recently developed high-efficiency solar cells while providing high array efficiency, protection from space radiation effects and plasma interaction minimization for high voltage arrays. The line-focus concentrator concept delivers two added advantages: (1) low-cost mass production of the lens material; and (2) relaxation of precise array tracking requirements to only a single axis. New array designs emphasize lightweight, high stiffness, stow-ability, and ease of manufacture and assembly. In this paper, the authors address the current status of the SCARLET (solar concentrator array with refractive linear element technology) concentrator program with special emphasis on cost and mass performance trade-offs versus cell type and Sun tracking capability.
{"title":"The SCARLET light concentrating solar array","authors":"D. Allen, P. Jones, D. Murphy, M. Piszczor","doi":"10.1109/PVSC.1996.564018","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564018","url":null,"abstract":"In recent years, spacecraft power levels have continued to grow, accelerating the evolution towards higher efficiency photovoltaic devices. Light concentrating arrays enable the cost-effective implementation of recently developed high-efficiency solar cells while providing high array efficiency, protection from space radiation effects and plasma interaction minimization for high voltage arrays. The line-focus concentrator concept delivers two added advantages: (1) low-cost mass production of the lens material; and (2) relaxation of precise array tracking requirements to only a single axis. New array designs emphasize lightweight, high stiffness, stow-ability, and ease of manufacture and assembly. In this paper, the authors address the current status of the SCARLET (solar concentrator array with refractive linear element technology) concentrator program with special emphasis on cost and mass performance trade-offs versus cell type and Sun tracking capability.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130850375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564002
Geoffrey P. Summers, M. Xapsos, E. A. Burke
A new model for predicting the fluence of solar proton events, based on extreme value theory, is compared to previous models and used to predict silicon solar cell damage as a function of mission duration for satellites in geosynchronous orbits. The model shows consistency with the JPL 1991 model for periods of time equal to 7 years or less. This is the time span of interest to designers of Earth orbiting satellites. However, for longer missions the forecasts of the new model differ from that of JPL 1991. The new model forecasts a higher probability that very large events will occur during long duration interplanetary missions.
{"title":"Extreme value statistics to the prediction of solar flare proton effects on solar cells","authors":"Geoffrey P. Summers, M. Xapsos, E. A. Burke","doi":"10.1109/PVSC.1996.564002","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564002","url":null,"abstract":"A new model for predicting the fluence of solar proton events, based on extreme value theory, is compared to previous models and used to predict silicon solar cell damage as a function of mission duration for satellites in geosynchronous orbits. The model shows consistency with the JPL 1991 model for periods of time equal to 7 years or less. This is the time span of interest to designers of Earth orbiting satellites. However, for longer missions the forecasts of the new model differ from that of JPL 1991. The new model forecasts a higher probability that very large events will occur during long duration interplanetary missions.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130219288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564211
F. Faller, N. Schillinger, A. Hurrle, C. Schetter, A. Eyer
Silicon films 40-90 /spl mu/m thick were epitaxially deposited on fast-grown mc-SSP pre-ribbons. Special attention was focused on the design of the authors' self-constructed CVD system. It is principally convertable into a conveyer-belt system for a high continuous throughput, which is needed to be economically competitive. With high deposition rates of up to 10 /spl mu/m/min, the epi-layers revealed diffusion lengths of 250 /spl mu/m on <100>-Cz substrates, 150 /spl mu/m on SILSO and 11-30 /spl mu/m on SSP pre-ribbons (all substrates highly doped). Solar cells were manufactured using the authors' standard cell process. No passivation or gettering steps were performed and no texturing was applied. Solar cell efficiencies of 12.8% on Cz, 11.1% on SILSO wafers and 6.1% on SSP were achieved.
{"title":"Mc-Si thin film solar cells by fast CVD on low cost SSP pre-ribbons","authors":"F. Faller, N. Schillinger, A. Hurrle, C. Schetter, A. Eyer","doi":"10.1109/PVSC.1996.564211","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564211","url":null,"abstract":"Silicon films 40-90 /spl mu/m thick were epitaxially deposited on fast-grown mc-SSP pre-ribbons. Special attention was focused on the design of the authors' self-constructed CVD system. It is principally convertable into a conveyer-belt system for a high continuous throughput, which is needed to be economically competitive. With high deposition rates of up to 10 /spl mu/m/min, the epi-layers revealed diffusion lengths of 250 /spl mu/m on <100>-Cz substrates, 150 /spl mu/m on SILSO and 11-30 /spl mu/m on SSP pre-ribbons (all substrates highly doped). Solar cells were manufactured using the authors' standard cell process. No passivation or gettering steps were performed and no texturing was applied. Solar cell efficiencies of 12.8% on Cz, 11.1% on SILSO wafers and 6.1% on SSP were achieved.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116014758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564052
S. Silvestre, D. Parton, L. Castañer, J. Carter, P. Ashburn
Series resistance values between 0.38 and 0.5 Rcm/sup 2/ have been obtained in solar cells contacted with polysilicon to both surfaces. 2.6% of the front area is contacted with a silicon/heavily doped polysilicon/metal structure to replace the conventional metal contact. The same technology has been applied to the solar cell backs to replace conventional back-surface-field (BSF) structure. The devices were fabricated in 4" wafers, and a VLSI polysilicon emitter technology was applied to fabricate polysilicon contacts. The polysilicon-silicon interface was produced using either an HF etch or RCA clean before polysilicon deposition, and half of the wafers were implanted with fluorine to assess the passivating effects on the polysilicon-silicon interface. The drive-in time of the impurities from the polysilicon into the silicon was also varied. The main results are that the series resistance is generally lower in fluorinated samples, both HF and RCA. The contribution to the total series resistance of the back side structure is evaluated by subtracting the front contributions independently measured.
{"title":"Series resistance in double-polysilicon-contacted silicon solar cells","authors":"S. Silvestre, D. Parton, L. Castañer, J. Carter, P. Ashburn","doi":"10.1109/PVSC.1996.564052","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564052","url":null,"abstract":"Series resistance values between 0.38 and 0.5 Rcm/sup 2/ have been obtained in solar cells contacted with polysilicon to both surfaces. 2.6% of the front area is contacted with a silicon/heavily doped polysilicon/metal structure to replace the conventional metal contact. The same technology has been applied to the solar cell backs to replace conventional back-surface-field (BSF) structure. The devices were fabricated in 4\" wafers, and a VLSI polysilicon emitter technology was applied to fabricate polysilicon contacts. The polysilicon-silicon interface was produced using either an HF etch or RCA clean before polysilicon deposition, and half of the wafers were implanted with fluorine to assess the passivating effects on the polysilicon-silicon interface. The drive-in time of the impurities from the polysilicon into the silicon was also varied. The main results are that the series resistance is generally lower in fluorinated samples, both HF and RCA. The contribution to the total series resistance of the back side structure is evaluated by subtracting the front contributions independently measured.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"11 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120874857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564031
Jan Schmidt, T. Lauinger, Armin G. Aberle, R. Hezel
In this paper, the lowest ever reported effective surface recombination velocities S/sub eff/ on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375/spl deg/C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-/spl Omega/cm p-Si wafers, an extremely low S/sub eff/ value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged S/sub eff/ values as low as 135 cm/s.
{"title":"Record low surface recombination velocities on low-resistivity silicon solar cell substrates","authors":"Jan Schmidt, T. Lauinger, Armin G. Aberle, R. Hezel","doi":"10.1109/PVSC.1996.564031","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564031","url":null,"abstract":"In this paper, the lowest ever reported effective surface recombination velocities S/sub eff/ on typical p-type low-resistivity silicon solar cell substrates are presented. We obtain this surface passivation by means of remote plasma silicon nitride films fabricated at 375/spl deg/C. On polished as well as on chemically textured silicon surfaces, the applied low-temperature passivation scheme is significantly superior to high-temperature passivation by state-of-the-art thermal oxides. On polished 1.5-/spl Omega/cm p-Si wafers, an extremely low S/sub eff/ value of 4 cm/s is obtained. Because of the enormous potential of these plasma silicon nitride films as passivation medium for the rear surface of silicon solar cells, we also investigate silicon nitride-passivated, Al grid-covered p-Si surfaces as used by us in bifacial solar cells. On such samples we measure spatially averaged S/sub eff/ values as low as 135 cm/s.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121283396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564250
M. Marudachalam, I. Hichri, R. Birkmire, J. Schultz, A. Swartzlander, M. Al‐Jassim
The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied by Auger depth profiling. CuGaSe/sub 2/ and CuInSe/sub 2/ were obtained via selenization by H/sub 2/Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe/sub 2//CuInSe/sub 2/ diffusion couple was annealed at 650/spl deg/C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe/sub 2/ in the temperature range of 400/spl deg/C to 600/spl deg/C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe/sub 2//GuInSe/sub 2/ couple annealed at 650/spl deg/C, and the diffusion coefficients of In in CuGaSe/sub 2/ films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650/spl deg/C in the diffusion couple are similar (D/sub In/=1.5/spl times/10/sup -11/ cm/sup 2//sec and D/sub Ga/=4.0/spl times/10/sup -11/ cm/sup 2//sec). The diffusion coefficients of In in CuGaSe/sub 2/ thin films varied from 2.0/spl times/10/sup -13/ cm/sup 2//sec to 4.5/spl times/10/sup -12/ cm/sup 2//sec in the temperature range of 400/spl deg/C to 600/spl deg/C.
{"title":"Diffusion of In and Ga in selenized Cu-In and Cu-Ga precursors","authors":"M. Marudachalam, I. Hichri, R. Birkmire, J. Schultz, A. Swartzlander, M. Al‐Jassim","doi":"10.1109/PVSC.1996.564250","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564250","url":null,"abstract":"The interdiffusion of Ga and In in a CuGaSe/sub 2//CuInSe/sub 2/ thin film diffusion couple and the diffusion of In into CuGaSe/sub 2/ thin films were studied by Auger depth profiling. CuGaSe/sub 2/ and CuInSe/sub 2/ were obtained via selenization by H/sub 2/Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe/sub 2//CuInSe/sub 2/ diffusion couple was annealed at 650/spl deg/C for 30 minutes in an argon atmosphere. The thin film source of In was diffused into CuGaSe/sub 2/ in the temperature range of 400/spl deg/C to 600/spl deg/C for 30 minutes in an argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe/sub 2//GuInSe/sub 2/ couple annealed at 650/spl deg/C, and the diffusion coefficients of In in CuGaSe/sub 2/ films diffusion annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650/spl deg/C in the diffusion couple are similar (D/sub In/=1.5/spl times/10/sup -11/ cm/sup 2//sec and D/sub Ga/=4.0/spl times/10/sup -11/ cm/sup 2//sec). The diffusion coefficients of In in CuGaSe/sub 2/ thin films varied from 2.0/spl times/10/sup -13/ cm/sup 2//sec to 4.5/spl times/10/sup -12/ cm/sup 2//sec in the temperature range of 400/spl deg/C to 600/spl deg/C.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126693613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-05-13DOI: 10.1109/PVSC.1996.564285
H. Moutinho, R. Dhere, K. Ramanathan, P. Sheldon, L. Kazmerski
CdS films have been deposited by solution growth on SnO/sub 2/ and glass substrates. Nucleation on SnO/sub 2/ occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO/sub 2/ depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.
{"title":"Growth analysis of cadmium sulfide thin films by atomic force microscopy","authors":"H. Moutinho, R. Dhere, K. Ramanathan, P. Sheldon, L. Kazmerski","doi":"10.1109/PVSC.1996.564285","DOIUrl":"https://doi.org/10.1109/PVSC.1996.564285","url":null,"abstract":"CdS films have been deposited by solution growth on SnO/sub 2/ and glass substrates. Nucleation on SnO/sub 2/ occurs at early deposition times, and complete conformal coverage is observed at low thickness values. The average grain size of the CdS films is established at these early times. In films deposited on glass substrates, nucleation is slower and occurs through 3-dimensional islands that increase in size and number as deposition proceeds. Optical measurements show that the bandgap values of CdS films deposited on SnO/sub 2/ depend mainly on substrate structure. Hydrogen heat treatment does not affect the surface morphology of the samples, but decreases bandgap values.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"IA-15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126557210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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