Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076953
Prabhupada Samal, V. K. Bhajana, S. K. Mohapatra
The paper describes, the structural and temperature analysis of 4H-SiC DMOSFET (Double-implanted metal-oxide-semiconductor field-effect-transistor). The SiC based DMOSFETs are most preferred switching devices for high power conversion because of its high carrier mobility and low dopant ionization energy. The current flow is in vertical direction i.e from source in the top to the drain in the bottom, rather than the horizontal direction as in Si MOSFETs. The thickness of drift layer may increase/decrease the off state blocking voltage range. This paper mainly describes the on-state characteristic, specific on-resistance and blocking voltage of DMOSFET under different temperatures. The simulation was performed using Synopsys TCAD tool and we obtained a blocking voltage of 1.1 kV at 26 °C, with the increase in temperature there was an gradual decrease in the blocking voltage range.
{"title":"Structural analysis of 1.1kV 4H-SiC Power DMOSFETs and it's susceptibility to high temperature","authors":"Prabhupada Samal, V. K. Bhajana, S. K. Mohapatra","doi":"10.1109/IEMENTECH.2017.8076953","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076953","url":null,"abstract":"The paper describes, the structural and temperature analysis of 4H-SiC DMOSFET (Double-implanted metal-oxide-semiconductor field-effect-transistor). The SiC based DMOSFETs are most preferred switching devices for high power conversion because of its high carrier mobility and low dopant ionization energy. The current flow is in vertical direction i.e from source in the top to the drain in the bottom, rather than the horizontal direction as in Si MOSFETs. The thickness of drift layer may increase/decrease the off state blocking voltage range. This paper mainly describes the on-state characteristic, specific on-resistance and blocking voltage of DMOSFET under different temperatures. The simulation was performed using Synopsys TCAD tool and we obtained a blocking voltage of 1.1 kV at 26 °C, with the increase in temperature there was an gradual decrease in the blocking voltage range.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129252930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076963
Arindam Das, R. Prasad, Mohita, Arijoy Mondal, K. R. Ranjan
This paper presents a CMOS temperature sensor working at sub-threshold voltage (Sub-VTh) for ultra low power applications. The sensor consists of a proportional-to-absolute-temperature (PTAT) current element that starves a current starved ring oscillator (CSRO). Since the circuit is designed in Sub-VTh, it enables ultra low power applications. But at the same time it becomes highly vulnerable to variations due to changes in process thereby resulting circuit currents to vary from die to die. An architecture is proposed where a bit-weighted current mirror (BWCM) is incorporated with CSRO to mitigate the effect due to process variations in the PTAT current. Lastly we have integrated the CSRO with a frequency to digital converter that converts the oscillator output signal into digital bits. Designing of the temperature sensor system is done in 180nm CMOS technology. The output frequency of the CSRO was found to be 50 Mhz. The sensor is operated at a VDD of 0.2V and the power consumed is 3.75 pW.
{"title":"CMOS temperature sensor using a current starved ring oscillator for low power and low leakage IOT applications","authors":"Arindam Das, R. Prasad, Mohita, Arijoy Mondal, K. R. Ranjan","doi":"10.1109/IEMENTECH.2017.8076963","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076963","url":null,"abstract":"This paper presents a CMOS temperature sensor working at sub-threshold voltage (Sub-VTh) for ultra low power applications. The sensor consists of a proportional-to-absolute-temperature (PTAT) current element that starves a current starved ring oscillator (CSRO). Since the circuit is designed in Sub-VTh, it enables ultra low power applications. But at the same time it becomes highly vulnerable to variations due to changes in process thereby resulting circuit currents to vary from die to die. An architecture is proposed where a bit-weighted current mirror (BWCM) is incorporated with CSRO to mitigate the effect due to process variations in the PTAT current. Lastly we have integrated the CSRO with a frequency to digital converter that converts the oscillator output signal into digital bits. Designing of the temperature sensor system is done in 180nm CMOS technology. The output frequency of the CSRO was found to be 50 Mhz. The sensor is operated at a VDD of 0.2V and the power consumed is 3.75 pW.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124438541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076939
V. Prakash, J. Pawar, A. Patel, Rabinder Henry, A. Patwardhan
Synthesis of Silver nanoparticles using silver nitrate as metal salt precursor and citric acid as reducing agent is being reported in this paper. Using Spectroscopy, silver nanoparticles nucleation and growth parameter has been analyzed. Absorption spectra of silver nanoparticles in water are determined. Absorption spectra shows two absorption peaks while crystal was growing, whereas fully grown crystal shows single absorption peak confirms heterogeneous crystal growth in liquid medium and average size distribution of silver nanoparticles.
{"title":"Analysis of nucleation and growth parameter of silver nanoparticles for sensors","authors":"V. Prakash, J. Pawar, A. Patel, Rabinder Henry, A. Patwardhan","doi":"10.1109/IEMENTECH.2017.8076939","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076939","url":null,"abstract":"Synthesis of Silver nanoparticles using silver nitrate as metal salt precursor and citric acid as reducing agent is being reported in this paper. Using Spectroscopy, silver nanoparticles nucleation and growth parameter has been analyzed. Absorption spectra of silver nanoparticles in water are determined. Absorption spectra shows two absorption peaks while crystal was growing, whereas fully grown crystal shows single absorption peak confirms heterogeneous crystal growth in liquid medium and average size distribution of silver nanoparticles.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124097048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076944
S. Bhattacharyya, Sourish Haldar, A. Deyasi
Lowest three quantum states of AlxGa1−xAs quantum disk is analytically computed as a function of surface-to-volume ratio when the structure is subjected to transverse magnetic field. Calculation is carried out from the first and second order Bessel functions obtained from the solution of time-independent Schrödinger equation subject to appropriate boundary conditions. Result is computed by considering Kane-type first order nonparabolic dispersion relation, and is compared with that obtained for simplified parabolic band structure. Comparison is also made with the energy states obtained when field is absent, and also for different material compositions and structural parameters. Nonlinear variation of subband transition energy is observed with increasing S/V ratio, i.e., with reduction of dimension. Result indicates possible application of the nano-device as IR detector.
{"title":"Effect of surface-to-volume ratio on eigenenergy in quantum disk in presence of magnetic field","authors":"S. Bhattacharyya, Sourish Haldar, A. Deyasi","doi":"10.1109/IEMENTECH.2017.8076944","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076944","url":null,"abstract":"Lowest three quantum states of AlxGa1−xAs quantum disk is analytically computed as a function of surface-to-volume ratio when the structure is subjected to transverse magnetic field. Calculation is carried out from the first and second order Bessel functions obtained from the solution of time-independent Schrödinger equation subject to appropriate boundary conditions. Result is computed by considering Kane-type first order nonparabolic dispersion relation, and is compared with that obtained for simplified parabolic band structure. Comparison is also made with the energy states obtained when field is absent, and also for different material compositions and structural parameters. Nonlinear variation of subband transition energy is observed with increasing S/V ratio, i.e., with reduction of dimension. Result indicates possible application of the nano-device as IR detector.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130769718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076992
Tarak Das, Arijit Ghosh, S. Guha, Piyali Basak
Pre-diagnosis of epileptic seizure using electroencephalogram (EEG) signals detecting seizure activity automatically using electroencephalogram (EEG) signals is of great importance and significance. Recording and reviewing of entire length of EEG is used to analyse epileptic activity by an expert. The classical method thus being a tedious task many intelligent automatic seizure detection schemes have been realised. Non linear approaches depict greater accuracy and have much higher significance. Our work focusses on obtaining a matrix of multi feature dimension including Brownian motion, Mean Absolute Value and Root Mean Square as key features. Features obtained from artefact free EEG signal are fed to intelligent classifiers in order to obtain the accuracy specificity and sensitivity values. Our proposed approach yields an overall accuracy of 74.78% for SVM, 89.13% for Weighted KNN and 91.09% for Ensemble Bagged Tree classifier. The ROC curve obtained by plotting the true positive rate against the false positive rate also shows significant region of convergence for the classifiers. This method can be utilised in designing intelligent seizure prediction systems.
{"title":"Classification of EEG Signals for Prediction of Seizure using Multi-Feature Extraction","authors":"Tarak Das, Arijit Ghosh, S. Guha, Piyali Basak","doi":"10.1109/IEMENTECH.2017.8076992","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076992","url":null,"abstract":"Pre-diagnosis of epileptic seizure using electroencephalogram (EEG) signals detecting seizure activity automatically using electroencephalogram (EEG) signals is of great importance and significance. Recording and reviewing of entire length of EEG is used to analyse epileptic activity by an expert. The classical method thus being a tedious task many intelligent automatic seizure detection schemes have been realised. Non linear approaches depict greater accuracy and have much higher significance. Our work focusses on obtaining a matrix of multi feature dimension including Brownian motion, Mean Absolute Value and Root Mean Square as key features. Features obtained from artefact free EEG signal are fed to intelligent classifiers in order to obtain the accuracy specificity and sensitivity values. Our proposed approach yields an overall accuracy of 74.78% for SVM, 89.13% for Weighted KNN and 91.09% for Ensemble Bagged Tree classifier. The ROC curve obtained by plotting the true positive rate against the false positive rate also shows significant region of convergence for the classifiers. This method can be utilised in designing intelligent seizure prediction systems.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115078612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076971
Gautam Ghosh, S. Sarkar, Shamik Mukherjee, Tiyasa Pal, S. Sen
The ordinary Voltage source inverter (VSI) has two output levels +VDC/2 and -VDC/2. For medium and high power applications, multi-stage VSI (series and/or parallel combinations) with suitable filter (for obtaining near sinusoidal waveform at the output) may be a solution but there are problems in matching of different stages, selection of bulky transformer and proper filter. The quality of both the output voltage and current waveforms with minimum ripple is obtained using high frequency switching along with various PWM techniques. These conventional two level inverters have some limitations in operating at high frequencies mainly due to switching losses and constraints in device rating. The problem is resolved by means of multilevel inverters (MLIs) which utilize lower switching frequencies and give high voltages with improved total harmonic distortion (THD) without use of filter. This paper gives a brief review on different MLI techniques with advantages and disadvantages of each technique. The main disadvantages of MLI are requirement for isolated power supplies, design complexity and switching control circuits for proper elimination of lower order harmonics.
{"title":"A comparative study of different multilevel inverters","authors":"Gautam Ghosh, S. Sarkar, Shamik Mukherjee, Tiyasa Pal, S. Sen","doi":"10.1109/IEMENTECH.2017.8076971","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076971","url":null,"abstract":"The ordinary Voltage source inverter (VSI) has two output levels +VDC/2 and -VDC/2. For medium and high power applications, multi-stage VSI (series and/or parallel combinations) with suitable filter (for obtaining near sinusoidal waveform at the output) may be a solution but there are problems in matching of different stages, selection of bulky transformer and proper filter. The quality of both the output voltage and current waveforms with minimum ripple is obtained using high frequency switching along with various PWM techniques. These conventional two level inverters have some limitations in operating at high frequencies mainly due to switching losses and constraints in device rating. The problem is resolved by means of multilevel inverters (MLIs) which utilize lower switching frequencies and give high voltages with improved total harmonic distortion (THD) without use of filter. This paper gives a brief review on different MLI techniques with advantages and disadvantages of each technique. The main disadvantages of MLI are requirement for isolated power supplies, design complexity and switching control circuits for proper elimination of lower order harmonics.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129566210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076969
Prateek Jain, Prakash P. Kumar, D. K. Palwalia
This paper presents optimized irrigation scheme using automatic water control for performing crop specific irrigation activities. Level of irrigation depends on soil moisture content and type of crop considered. Different crops need different soil moisture for optimum crop yield. For optimum crop yield, smart irrigation, knowledge of soil condition, and water requirement of crop is essential. Optimal usage of water reduces overall power consumption and optimizes usage of water reserves. Smart usage of irrigation system optimizes land area productivity and conserves nature by reducing overall involved emission & losses in conversion components. Low cost microcontroller like Arduino based interfacing unit, has been used in this paper to obtain low cost smart irrigation solution.
{"title":"Irrigation management system with micro-controller application","authors":"Prateek Jain, Prakash P. Kumar, D. K. Palwalia","doi":"10.1109/IEMENTECH.2017.8076969","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076969","url":null,"abstract":"This paper presents optimized irrigation scheme using automatic water control for performing crop specific irrigation activities. Level of irrigation depends on soil moisture content and type of crop considered. Different crops need different soil moisture for optimum crop yield. For optimum crop yield, smart irrigation, knowledge of soil condition, and water requirement of crop is essential. Optimal usage of water reduces overall power consumption and optimizes usage of water reserves. Smart usage of irrigation system optimizes land area productivity and conserves nature by reducing overall involved emission & losses in conversion components. Low cost microcontroller like Arduino based interfacing unit, has been used in this paper to obtain low cost smart irrigation solution.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128909212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076987
S. Mukherjee, Sumalya Saha, S. Lahiri, Ayan Das, A. Bhunia, Aishik Konwer, Arindam Chakraborty
In this paper, we discuss and analyze two different paradigm of techniques for face detection in images containing human. We discuss the formulation for both the methods, i.e., using hand-crafted features followed by training a simple classifier and an entirely modern approach of learning features from data using neural network. We discussed the theoretical advantages of the special kind of neural network we used, i.e., Convolutional Neural Network. Lastly we ran both the methods to FDDB face detection dataset and provided some qualitative results.
{"title":"Convolutional Neural Network based face detection","authors":"S. Mukherjee, Sumalya Saha, S. Lahiri, Ayan Das, A. Bhunia, Aishik Konwer, Arindam Chakraborty","doi":"10.1109/IEMENTECH.2017.8076987","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076987","url":null,"abstract":"In this paper, we discuss and analyze two different paradigm of techniques for face detection in images containing human. We discuss the formulation for both the methods, i.e., using hand-crafted features followed by training a simple classifier and an entirely modern approach of learning features from data using neural network. We discussed the theoretical advantages of the special kind of neural network we used, i.e., Convolutional Neural Network. Lastly we ran both the methods to FDDB face detection dataset and provided some qualitative results.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131703460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076947
R. Mukherjee, Pritam Dutta, Dibyaduti Gorai, Soumen Santra, A. Deyasi
A novel package in JAVA-GUI platform is developed for the end-users to compute the figure of merit of the 1D PhC based bandpass filter designed at 1.55 μm. Optimization procedure is made to increase bandwidth and reduce ripple for a set of structural parameters, and the effect of the filter transmittivity profile is also simultaneously measured. A new algorithm is developed for the purpose which will help the user to study prior to fabrication whether the proposed structure will meet the requirements of application. This package can also be applicable with the various materials having positive refractive indices already used to design PhC based filter.
{"title":"JAVA-GUI based package for calcualting bandwidth and ripple of 1D PhC based filter","authors":"R. Mukherjee, Pritam Dutta, Dibyaduti Gorai, Soumen Santra, A. Deyasi","doi":"10.1109/IEMENTECH.2017.8076947","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076947","url":null,"abstract":"A novel package in JAVA-GUI platform is developed for the end-users to compute the figure of merit of the 1D PhC based bandpass filter designed at 1.55 μm. Optimization procedure is made to increase bandwidth and reduce ripple for a set of structural parameters, and the effect of the filter transmittivity profile is also simultaneously measured. A new algorithm is developed for the purpose which will help the user to study prior to fabrication whether the proposed structure will meet the requirements of application. This package can also be applicable with the various materials having positive refractive indices already used to design PhC based filter.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126657771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076950
Meenakshi Banerjee, Trinisa Ghorai, Romi Dey, Arpita Das, A. Deyasi
In this paper, effect of temperature due to Joule heat dissipation in the optoelectronic circuit on the transmittivity and ripple in passband of the optical filter is analytically computed for normal incidence of electromagnetic wave. The filter is made by photonic crystal with semiconductor heterostructure as the unit of periodic structure, and transfer matrix technique is used to determine the transmittivity of the filter around 1550 nm. Result suggests that external temperature has a great influence on the ripple in the desired passband as well as the structural parameters; and hence performance of this type of filter will greatly depend on the circuit conditions. However, bandwidth of the device remains unaffected in the temperature range considered. Results are useful for utilizing the device in all-optical integrated circuit and also to fabricate Bragg grating based sensor.
{"title":"Performance estimation of photonic crystal based butterworth filter at higher temperature due to joule heat dissipation","authors":"Meenakshi Banerjee, Trinisa Ghorai, Romi Dey, Arpita Das, A. Deyasi","doi":"10.1109/IEMENTECH.2017.8076950","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076950","url":null,"abstract":"In this paper, effect of temperature due to Joule heat dissipation in the optoelectronic circuit on the transmittivity and ripple in passband of the optical filter is analytically computed for normal incidence of electromagnetic wave. The filter is made by photonic crystal with semiconductor heterostructure as the unit of periodic structure, and transfer matrix technique is used to determine the transmittivity of the filter around 1550 nm. Result suggests that external temperature has a great influence on the ripple in the desired passband as well as the structural parameters; and hence performance of this type of filter will greatly depend on the circuit conditions. However, bandwidth of the device remains unaffected in the temperature range considered. Results are useful for utilizing the device in all-optical integrated circuit and also to fabricate Bragg grating based sensor.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131832844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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