Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076960
K. R. Ranjan, R. Prasad
This paper work is about a transimpedance amplifier which have very high gain and sensitivity designed using cadence CMOS 0.18 μm technology with supply voltage of 1.8 V dissipates power 43μW suitable for current sensing signals from a sensor, molecular and nanodevice system. The integrator based circuit followed by an ADC. Because of the ability to handle large standing currents, the circuit is competent for use in the biological system where physical medium is also present. The trans-impedance amplifier (TIA) designed has low noise high gain which make it suitable to interface with ADC. A capacitive-feedback current amplifier drives current in to active load to obtain a 80 M-Om trans-impedance gain, 1.79 MHZ bandwidth phase response near 0.
{"title":"High gain low power low noise trans-impedance amplifier for current sensing application","authors":"K. R. Ranjan, R. Prasad","doi":"10.1109/IEMENTECH.2017.8076960","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076960","url":null,"abstract":"This paper work is about a transimpedance amplifier which have very high gain and sensitivity designed using cadence CMOS 0.18 μm technology with supply voltage of 1.8 V dissipates power 43μW suitable for current sensing signals from a sensor, molecular and nanodevice system. The integrator based circuit followed by an ADC. Because of the ability to handle large standing currents, the circuit is competent for use in the biological system where physical medium is also present. The trans-impedance amplifier (TIA) designed has low noise high gain which make it suitable to interface with ADC. A capacitive-feedback current amplifier drives current in to active load to obtain a 80 M-Om trans-impedance gain, 1.79 MHZ bandwidth phase response near 0.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133482825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076998
A. Datta
Analysis of Network Intermediate Connectivity is one of the important and challenging issues in Vehicular Adhoc Network (VANET). Gradually, intermediate connectivity among the nodes becomes a popular interesting research paradigm in high mobility domain. It depends upon the movement pattern of the vehicles and the routing of packet transmission depends upon the connectivity of the nodes. Among the possible connectivity in VANET scenario, the stable connectivity is prioritized. Due to the unique characteristics of VANET, this type of network troubles more serious problems in routing process. This paper discusses about an optimized and reliable routing strategy in Vehicular Adhoc Network (VANET) scenario for smart cities. In this work, connectivity is evaluated on the basis of logic of a Boolean Expression which is created using the category of speed of vehicle and direction of vehicle movement with respect to other vehicles. The experimental result is shown the performance of the proposed routing protocol over an existing connectivity oriented routing protocol of VANET. From the result analysis, this new approach decreases the delay and increases the throughput of the packet transmission.
{"title":"Modified Ant-AODV-VANET routing protocol for Vehicular Adhoc Network","authors":"A. Datta","doi":"10.1109/IEMENTECH.2017.8076998","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076998","url":null,"abstract":"Analysis of Network Intermediate Connectivity is one of the important and challenging issues in Vehicular Adhoc Network (VANET). Gradually, intermediate connectivity among the nodes becomes a popular interesting research paradigm in high mobility domain. It depends upon the movement pattern of the vehicles and the routing of packet transmission depends upon the connectivity of the nodes. Among the possible connectivity in VANET scenario, the stable connectivity is prioritized. Due to the unique characteristics of VANET, this type of network troubles more serious problems in routing process. This paper discusses about an optimized and reliable routing strategy in Vehicular Adhoc Network (VANET) scenario for smart cities. In this work, connectivity is evaluated on the basis of logic of a Boolean Expression which is created using the category of speed of vehicle and direction of vehicle movement with respect to other vehicles. The experimental result is shown the performance of the proposed routing protocol over an existing connectivity oriented routing protocol of VANET. From the result analysis, this new approach decreases the delay and increases the throughput of the packet transmission.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122210312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076957
B. Vandana, J. Das, S. K. Mohapatra, M. Jyothi
The paper investigates the impact of effective oxide thickness (EOT) on inverted ‘T’ Junctionless FinFET (JLT) on an SOI platform. Due to the scaling trends the isolation at gate/channel interface is important to understand; accordingly an EOT with 1 and 1.5 nm is used in our simulation work. With the fixed EOT values the physical oxide thickness are calculated for different dielectric materials and short channel parameters along with analog performances are investigated. At nanoscale regime, JLTs are predominant with uniform high doping concentration with no doping gradients, and the bulk conduction mechanism is preferred. The two parameters VTH extraction method and the ratio TK/LG are included which significantly down scale the short channel effects (SCEs).
{"title":"Impact on gate oxide material of inverted ‘T’ Junctionless FinFET at 22 nm technology node","authors":"B. Vandana, J. Das, S. K. Mohapatra, M. Jyothi","doi":"10.1109/IEMENTECH.2017.8076957","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076957","url":null,"abstract":"The paper investigates the impact of effective oxide thickness (EOT) on inverted ‘T’ Junctionless FinFET (JLT) on an SOI platform. Due to the scaling trends the isolation at gate/channel interface is important to understand; accordingly an EOT with 1 and 1.5 nm is used in our simulation work. With the fixed EOT values the physical oxide thickness are calculated for different dielectric materials and short channel parameters along with analog performances are investigated. At nanoscale regime, JLTs are predominant with uniform high doping concentration with no doping gradients, and the bulk conduction mechanism is preferred. The two parameters VTH extraction method and the ratio TK/LG are included which significantly down scale the short channel effects (SCEs).","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125013477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076974
S. Amritendu, S. Arun
The popularity of renewable energy resources increasing day by day. Among the renewable energy technologies photovoltaic technology is the most famous one because of its cheapness in cost and availability. A high gain converter based on MPPT is proposed here. P&O algorithm is used in MPPT which enables to track the point of maximum power. The high gain converter consisting of a coupled inductor which enhances the gain of the system. The performance of the system verified using MATLAB/Simulink modeling.
{"title":"MPPT based high gain converter","authors":"S. Amritendu, S. Arun","doi":"10.1109/IEMENTECH.2017.8076974","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076974","url":null,"abstract":"The popularity of renewable energy resources increasing day by day. Among the renewable energy technologies photovoltaic technology is the most famous one because of its cheapness in cost and availability. A high gain converter based on MPPT is proposed here. P&O algorithm is used in MPPT which enables to track the point of maximum power. The high gain converter consisting of a coupled inductor which enhances the gain of the system. The performance of the system verified using MATLAB/Simulink modeling.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"142 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076973
Shashi Kant Chaudhary, Awadhesh Kumar
This paper presents an application of model order reduction technique to unstable waste water treatment plent using optimal Hankel Norm Approximation. For unstable system a decomposition algorithm has been applied to break the unstable system into stable and unstable part. Then reduced order model of the stable part has been obtained through Hankel Norm Approximation and finally the reduced order model of unstable system has been obtained by combining the reduced model of stable part and decomposed unstable part. A numerical procedure of the plant has been carried out to show the effectiveness.
{"title":"Approximation to an unstable, MIMO waste water treatment plant","authors":"Shashi Kant Chaudhary, Awadhesh Kumar","doi":"10.1109/IEMENTECH.2017.8076973","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076973","url":null,"abstract":"This paper presents an application of model order reduction technique to unstable waste water treatment plent using optimal Hankel Norm Approximation. For unstable system a decomposition algorithm has been applied to break the unstable system into stable and unstable part. Then reduced order model of the stable part has been obtained through Hankel Norm Approximation and finally the reduced order model of unstable system has been obtained by combining the reduced model of stable part and decomposed unstable part. A numerical procedure of the plant has been carried out to show the effectiveness.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114503305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8077004
Shabi Farooq, N. Zafar, Farhan Ullah
In this paper, we describe smart sensors, actors, user, alarm system, smart appliances of our proposed smart home model. We also describe the main problems of the smart home which are safety, security and energy saving. In our smart home model wireless sensor, actors, smart appliances, and user communicate with each other and with the central system. Sensors collect data about abnormal home situations or events and send this data to the central system. The system further communicates with the user and events are handled by the central system, user and smart actors depending upon the nature of the event. Actors perform necessary functions on the basis of information provided by the sensor. Sensors are installed at different locations in the home. The components of our proposed smart home model are implemented by developing a formal specification of components using VDM-SL. VDM-SL is a formal specification language used for analysis of complex systems. The developed specification is validated, verified and analysed using.
{"title":"Formal modeling of smart home monitoring system","authors":"Shabi Farooq, N. Zafar, Farhan Ullah","doi":"10.1109/IEMENTECH.2017.8077004","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8077004","url":null,"abstract":"In this paper, we describe smart sensors, actors, user, alarm system, smart appliances of our proposed smart home model. We also describe the main problems of the smart home which are safety, security and energy saving. In our smart home model wireless sensor, actors, smart appliances, and user communicate with each other and with the central system. Sensors collect data about abnormal home situations or events and send this data to the central system. The system further communicates with the user and events are handled by the central system, user and smart actors depending upon the nature of the event. Actors perform necessary functions on the basis of information provided by the sensor. Sensors are installed at different locations in the home. The components of our proposed smart home model are implemented by developing a formal specification of components using VDM-SL. VDM-SL is a formal specification language used for analysis of complex systems. The developed specification is validated, verified and analysed using.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"373 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115176134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8077009
A. Bhaumik, A. Das, A. Mishra, A. Shaw, A. Yadav, Sunipa Roy
Limited storage capacity of battery constricts the usefulness of most high technology devices such as cell phones, computers, and sensors. In the future, these limitations will become more pronounced as the demand for wireless power outpaces battery development which is already at its best. Thus, we need to come up with new power generation techniques which will be used as an energy source for the next generation of wearable computers, wireless sensors, and autonomous systems. Piezoelectric materials nowadays play a major role in the so called smart materials because of their ability to couple mechanical and electrical properties. The direct piezoelectric effect is that these materials, when subjected to mechanical stress, generate an electric charge proportional to that stress. The inverse piezoelectric effect is that these materials become strained when an electric field is applied, the strain again being proportional to the applied field. Piezoelectric materials are generally used as sensors and actuators. Piezoelectric energy generation at the sub-micron-scale have infinite scope for research and application in upcoming technologies. This paper presents a theoretical and experimental analysis to generate non-conventional energy using piezoelectric crystals to power wearable devices.
{"title":"Non-conventional energy sources using piezoelectric crystal for wearable electronics","authors":"A. Bhaumik, A. Das, A. Mishra, A. Shaw, A. Yadav, Sunipa Roy","doi":"10.1109/IEMENTECH.2017.8077009","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8077009","url":null,"abstract":"Limited storage capacity of battery constricts the usefulness of most high technology devices such as cell phones, computers, and sensors. In the future, these limitations will become more pronounced as the demand for wireless power outpaces battery development which is already at its best. Thus, we need to come up with new power generation techniques which will be used as an energy source for the next generation of wearable computers, wireless sensors, and autonomous systems. Piezoelectric materials nowadays play a major role in the so called smart materials because of their ability to couple mechanical and electrical properties. The direct piezoelectric effect is that these materials, when subjected to mechanical stress, generate an electric charge proportional to that stress. The inverse piezoelectric effect is that these materials become strained when an electric field is applied, the strain again being proportional to the applied field. Piezoelectric materials are generally used as sensors and actuators. Piezoelectric energy generation at the sub-micron-scale have infinite scope for research and application in upcoming technologies. This paper presents a theoretical and experimental analysis to generate non-conventional energy using piezoelectric crystals to power wearable devices.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"260 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122936765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076927
S. Maity, M. Gangopadhyaya, B. Gupta
A theoretical investigation is presented for inhomogeneous Rectangular Microstrip Antenna (RMA). The inhomogenity is introduced by adding two different substrate materials side by side. Transcendental equation is given here to predict the resonant frequency for different modes. Fundamental mode only is investigated here. Theoretical results on resonant frequency are compared with data obtained using 3D numerical EM simulator to show the accuracy of our theory.
{"title":"Resonant frequency of an inhomogeneous Rectangular Microstrip Antenna","authors":"S. Maity, M. Gangopadhyaya, B. Gupta","doi":"10.1109/IEMENTECH.2017.8076927","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076927","url":null,"abstract":"A theoretical investigation is presented for inhomogeneous Rectangular Microstrip Antenna (RMA). The inhomogenity is introduced by adding two different substrate materials side by side. Transcendental equation is given here to predict the resonant frequency for different modes. Fundamental mode only is investigated here. Theoretical results on resonant frequency are compared with data obtained using 3D numerical EM simulator to show the accuracy of our theory.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125780687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076958
Nishi Tiwari, Suraj K. Gupta, S. Mishra
Wide Band (W-Band) Metal Oxide Semiconductor with High Electron Mobility Transistor was purposed on the AlxGa1−xN/GaN heterostructure with 25nm, 30nm, 35nm and 40nm AlxGa1−xN layer thickness, respectively. AlxGa1−xN/GaN MOSHEMT with thicker AlxGa1-xN layer shows better RF characteristics than other thinner AlxGa1−xN layer, due to better removal of short channel effect. In case of 40nm thickness, maximum cut-off frequency is about 11 THz, while in case of 25nm, 30nm and 35nm maximum cut-off frequency is about 7.5THz, 6THz and 5THz respectively. In case of DC performance some of the characteristics of AlxGa1-xN/GaN MOSHEMT shows the better characteristics with thinner AlxGa1−xN layer thickness. We can conclude that if we increase the thickness of the AlGaN layer, short channel effect is not more prominent in the device compare to the thinner barrier layer.
{"title":"Impact of AlGaN barrier layer on DC and AC characteristics of AlxGa1−xN/GaN MOSHEMT","authors":"Nishi Tiwari, Suraj K. Gupta, S. Mishra","doi":"10.1109/IEMENTECH.2017.8076958","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076958","url":null,"abstract":"Wide Band (W-Band) Metal Oxide Semiconductor with High Electron Mobility Transistor was purposed on the Al<inf>x</inf>Ga<inf>1−x</inf>N/GaN heterostructure with 25nm, 30nm, 35nm and 40nm Al<inf>x</inf>Ga<inf>1−x</inf>N layer thickness, respectively. Al<inf>x</inf>Ga<inf>1−x</inf>N/GaN MOSHEMT with thicker AlxGa1-xN layer shows better RF characteristics than other thinner Al<inf>x</inf>Ga<inf>1−x</inf>N layer, due to better removal of short channel effect. In case of 40nm thickness, maximum cut-off frequency is about 11 THz, while in case of 25nm, 30nm and 35nm maximum cut-off frequency is about 7.5THz, 6THz and 5THz respectively. In case of DC performance some of the characteristics of AlxGa1-xN/GaN MOSHEMT shows the better characteristics with thinner Al<inf>x</inf>Ga<inf>1−x</inf>N layer thickness. We can conclude that if we increase the thickness of the AlGaN layer, short channel effect is not more prominent in the device compare to the thinner barrier layer.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125465241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-04-01DOI: 10.1109/IEMENTECH.2017.8076980
Gopal Chandra Jana, A. Swetapadma, P. Pattnaik
In this paper an intelligent method called adaptive neuro-fuzzy inference system (ANFIS) is proposed for discriminating normal actions from aggressive actions using the features extracted from electromyography (EMG) signals. Classification of normal and aggressive actions are essential for diseases and prosthetic arm controls. But accurate classification of physical actions are sometimes not possible using raw EMG signals. To enhance the classification accuracy feature extraction is an essential criterion. Hence in this work wavelet analysis is used for feature extraction from EMG signals to provide a suitable pattern to the ANFIS based classifier. The EMG signals are decomposed using DB-4 wavelet up to level 5 and approximate coefficients are extracted. Approximate coefficients from the signals are taken as input to the ANFIS module to classify the physical actions. The proposed method is validated using various test cases and it is observed that accuracy of the proposed method is up to 98% from all the tested cases.
{"title":"An intelligent method for classification of normal and aggressive actions from electromyography signals","authors":"Gopal Chandra Jana, A. Swetapadma, P. Pattnaik","doi":"10.1109/IEMENTECH.2017.8076980","DOIUrl":"https://doi.org/10.1109/IEMENTECH.2017.8076980","url":null,"abstract":"In this paper an intelligent method called adaptive neuro-fuzzy inference system (ANFIS) is proposed for discriminating normal actions from aggressive actions using the features extracted from electromyography (EMG) signals. Classification of normal and aggressive actions are essential for diseases and prosthetic arm controls. But accurate classification of physical actions are sometimes not possible using raw EMG signals. To enhance the classification accuracy feature extraction is an essential criterion. Hence in this work wavelet analysis is used for feature extraction from EMG signals to provide a suitable pattern to the ANFIS based classifier. The EMG signals are decomposed using DB-4 wavelet up to level 5 and approximate coefficients are extracted. Approximate coefficients from the signals are taken as input to the ANFIS module to classify the physical actions. The proposed method is validated using various test cases and it is observed that accuracy of the proposed method is up to 98% from all the tested cases.","PeriodicalId":411574,"journal":{"name":"2017 1st International Conference on Electronics, Materials Engineering and Nano-Technology (IEMENTech)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132169084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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