Pub Date : 2017-03-01DOI: 10.1109/ICNETS2.2017.8067902
B. Kumari, D. Vydeki
Wireless networks are expanding day by day, as everyone wants wireless connections. If we talk about Mobile Ad-hoc Network (MANETs), this is one of the vulnerable wireless networks due to lack of central co-coordinator. Any malicious nodes can threat the security of MANETs very efficiently. Black-Hole attack is one of the security threat in which the malicious node attract packets from source node by broadcasting the shortest route to destination and drop packets without delivering to the destination node. The main aim of this paper is to study the effect of Black-Hole attack in MANET using Ad-Hoc on Demand Distance Vector (AODV) which is a Reactive routing protocol. The simulation of MANETs with 15, 25, and 50 nodes is done and comparison of performance parameters such as PDR and throughput of Black-hole affected MANET and the normal network is taken into account for low, medium and high traffic intensities. Simulation is done in NS-2.
无线网络日益扩大,因为每个人都想要无线连接。如果我们谈论移动自组网(manet),由于缺乏中心协同协调器,这是一个脆弱的无线网络。任何恶意节点都可能严重威胁到网络的安全。黑洞攻击是指恶意节点通过广播到达目的节点的最短路由来吸引源节点的报文,并将报文丢弃而不发送到目的节点的一种安全威胁。本文的主要目的是利用响应路由协议AODV (Ad-Hoc on Demand Distance Vector)来研究黑洞攻击在MANET中的影响。对15、25和50节点的MANET进行了仿真,比较了低、中、高流量强度下受黑洞影响的MANET与正常网络的PDR和吞吐量等性能参数。仿真在NS-2中完成。
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Pub Date : 2017-03-01DOI: 10.1109/ICNETS2.2017.8067920
Manu Vyas, Mani Kunnathettu Rajee, Shrikant Subhash Warghade, K. R. Arunkumar
According to the WHO Global status report on road safety 2015, seat belts have a great impact in increasing safety of passengers; both in terms of injuries and fatalities. Although seat belts have been proven effective in saving lives, they are largely ignored by many drivers. Seat belts are often seen as an inconvenience and are under-utilized. With this background, and the motivation to encourage the use of seat belts, the following research paper describes a CAN-based seat belt monitoring system. The paper firstly discusses the need for such a system. Following that, the system's functionality is described. The system uses microcontrollers to judge the status of the seat belt and performs speed governing action accordingly. Then, the paper elucidates on the potential impact of adopting this system. The paper closes with a short discussion of the further additions and improvements that can be made to the system.
{"title":"Active seat belt system","authors":"Manu Vyas, Mani Kunnathettu Rajee, Shrikant Subhash Warghade, K. R. Arunkumar","doi":"10.1109/ICNETS2.2017.8067920","DOIUrl":"https://doi.org/10.1109/ICNETS2.2017.8067920","url":null,"abstract":"According to the WHO Global status report on road safety 2015, seat belts have a great impact in increasing safety of passengers; both in terms of injuries and fatalities. Although seat belts have been proven effective in saving lives, they are largely ignored by many drivers. Seat belts are often seen as an inconvenience and are under-utilized. With this background, and the motivation to encourage the use of seat belts, the following research paper describes a CAN-based seat belt monitoring system. The paper firstly discusses the need for such a system. Following that, the system's functionality is described. The system uses microcontrollers to judge the status of the seat belt and performs speed governing action accordingly. Then, the paper elucidates on the potential impact of adopting this system. The paper closes with a short discussion of the further additions and improvements that can be made to the system.","PeriodicalId":413865,"journal":{"name":"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132080512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/ICNETS2.2017.8067968
Pranjali P. Patange, J. Alex
Speech recognition systems are ubiquitous and find its application in automated voice control, voice dialling and automated directory assistance. This paper aims at implementing a neural network based isolated spoken word recognition system on an embedded board — Raspberry Pi using open source software called octave. Mel-Frequency Cepstral Coefficient (MFCC) features are extracted from speech signal and given as input to the neural network. The Feed Forward Multi-Layer Perceptron Neural Network trained with back propagation rule is implemented using Octave in Raspberry Pi. TIDIGITS corpus is used for the experiment. Speaker dependent speech recognition results in 100% accuracy but the speaker independent recognition system shows less accuracy.
{"title":"Implementation of ANN based speech recognition system on an embedded board","authors":"Pranjali P. Patange, J. Alex","doi":"10.1109/ICNETS2.2017.8067968","DOIUrl":"https://doi.org/10.1109/ICNETS2.2017.8067968","url":null,"abstract":"Speech recognition systems are ubiquitous and find its application in automated voice control, voice dialling and automated directory assistance. This paper aims at implementing a neural network based isolated spoken word recognition system on an embedded board — Raspberry Pi using open source software called octave. Mel-Frequency Cepstral Coefficient (MFCC) features are extracted from speech signal and given as input to the neural network. The Feed Forward Multi-Layer Perceptron Neural Network trained with back propagation rule is implemented using Octave in Raspberry Pi. TIDIGITS corpus is used for the experiment. Speaker dependent speech recognition results in 100% accuracy but the speaker independent recognition system shows less accuracy.","PeriodicalId":413865,"journal":{"name":"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129839269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/ICNETS2.2017.8067923
R. Manohari, K. K. Nagarajan, R. Srinivasan
The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling structures such as the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET (proposed to improve the ON current of conventional Tunnel FET) are scrutinized in terms of on current. Along with that the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET are studied for their single event transient performance. 2D-TCAD simulations are used for this purpose.
{"title":"Single event transient analyses of conventional planar tunnel FET, planar Tunnel FET with pocket and L shaped tunnel FET","authors":"R. Manohari, K. K. Nagarajan, R. Srinivasan","doi":"10.1109/ICNETS2.2017.8067923","DOIUrl":"https://doi.org/10.1109/ICNETS2.2017.8067923","url":null,"abstract":"The impact of technology scaling vividly increases the susceptibility of semiconductor devices to radiation. Single Event Transient (SET) in a device is a process in which the generation of charge takes place when a single particle passes through a sensitive node in the device. This paper deals with the performance analysis of three different tunneling structures such as the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET (proposed to improve the ON current of conventional Tunnel FET) are scrutinized in terms of on current. Along with that the conventional planar Tunnel FET, Planar Tunnel FET with pocket and L shaped Tunnel FET are studied for their single event transient performance. 2D-TCAD simulations are used for this purpose.","PeriodicalId":413865,"journal":{"name":"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121367316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-03-01DOI: 10.1109/ICNETS2.2017.8067936
G. Jacob, G. Raina
The aim of this paper is to study graphene plasmonics for THz applications. The range of absorbance of electromagnetic waves on a graphene monolayer is investigated to understand the plasmonic behaviour of graphene on patterned SiO2 substrate. Simulation results show that absorption range and intensity gets altered according to the graphene doping level, periodicity of grating and dielectric media used on the patterned substrate. These results show the plasmonic effect on graphene has a tuneable behaviour, and it can be utilised for the future plasmonic sensors and optoelectronics devices in the mid-infrared region.
{"title":"Enhanced absorption in graphene on periodic patterned SiO2 substrate","authors":"G. Jacob, G. Raina","doi":"10.1109/ICNETS2.2017.8067936","DOIUrl":"https://doi.org/10.1109/ICNETS2.2017.8067936","url":null,"abstract":"The aim of this paper is to study graphene plasmonics for THz applications. The range of absorbance of electromagnetic waves on a graphene monolayer is investigated to understand the plasmonic behaviour of graphene on patterned SiO2 substrate. Simulation results show that absorption range and intensity gets altered according to the graphene doping level, periodicity of grating and dielectric media used on the patterned substrate. These results show the plasmonic effect on graphene has a tuneable behaviour, and it can be utilised for the future plasmonic sensors and optoelectronics devices in the mid-infrared region.","PeriodicalId":413865,"journal":{"name":"2017 International Conference on Nextgen Electronic Technologies: Silicon to Software (ICNETS2)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127840806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}