Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195882
T. Yamamoto, H. Okino, E. Matsuzaki, Y. Yamashita
Cut angles dependence of electromechanical coupling factors in various orientations of KNbO/sub 3/ single crystal were calculated by finite element analysis. These results were compared with direct calculations using piezoelectric equation and discussed with experimental results. The k11 in a bar was 0.76 at the /spl theta/ = 40.5/spl deg/ around Y axis (XYt)40.5/spl deg/. In a thin plate, kt was 0.72 at /spl theta/ =50/spl deg/ around Y axis (XYI)50/spl deg/.
{"title":"Piezoelectric properties of KNbO/sub 3/ in various crystal orientations by finite element analysis","authors":"T. Yamamoto, H. Okino, E. Matsuzaki, Y. Yamashita","doi":"10.1109/ISAF.2002.1195882","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195882","url":null,"abstract":"Cut angles dependence of electromechanical coupling factors in various orientations of KNbO/sub 3/ single crystal were calculated by finite element analysis. These results were compared with direct calculations using piezoelectric equation and discussed with experimental results. The k11 in a bar was 0.76 at the /spl theta/ = 40.5/spl deg/ around Y axis (XYt)40.5/spl deg/. In a thin plate, kt was 0.72 at /spl theta/ =50/spl deg/ around Y axis (XYI)50/spl deg/.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121603150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195902
T. Miyamotol, S. Murakami, K. Inoue, Y. Suzuki, T. Nomura, M. Noda, M. Okuyama
Ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ (BTS/sub 15/) thin film is newly prepared on the Pt/Ti/SiO/sub 2//Si substrate by Metal-Organic Decomposition. The firing condition is determined by thermogravimetric and differential thermal analysis. The BTS/sub 15/ thin film with flat surface and uniform thickness is obtained by spin coating in N/sub 2/ atmosphere which avoid moisture. The BTS/sub 15/ film has a perovskite phase and is random-oriented, with strong (110) orientation. It is also found that crystalline structure is cubic at 24/spl deg/C with lattice constant of 4.01 /spl Aring/, and grain size of about 30 nm estimated by Scherrer equation and SEM image. From P-E hysteresis loop at 20/spl deg/C, the polarization at E = 0 and electric field at P = 0 are 1.07 /spl mu/C/cm/sup 2/ and 24.0 kV/cm, respectively. It is observed that dielectric constant decreases monotonously from about 830 to 630 with increasing temperature ranging from 20 to 50/spl deg/C. Finally, it is found that the BTS/sub 15/ thin film shows a sufficient ferroelectricity and is an attractive material for the functional ferroelectric devices, such as thermal-type infrared sensor.
{"title":"Preparation of ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ thin films by metal-organic decomposition","authors":"T. Miyamotol, S. Murakami, K. Inoue, Y. Suzuki, T. Nomura, M. Noda, M. Okuyama","doi":"10.1109/ISAF.2002.1195902","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195902","url":null,"abstract":"Ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ (BTS/sub 15/) thin film is newly prepared on the Pt/Ti/SiO/sub 2//Si substrate by Metal-Organic Decomposition. The firing condition is determined by thermogravimetric and differential thermal analysis. The BTS/sub 15/ thin film with flat surface and uniform thickness is obtained by spin coating in N/sub 2/ atmosphere which avoid moisture. The BTS/sub 15/ film has a perovskite phase and is random-oriented, with strong (110) orientation. It is also found that crystalline structure is cubic at 24/spl deg/C with lattice constant of 4.01 /spl Aring/, and grain size of about 30 nm estimated by Scherrer equation and SEM image. From P-E hysteresis loop at 20/spl deg/C, the polarization at E = 0 and electric field at P = 0 are 1.07 /spl mu/C/cm/sup 2/ and 24.0 kV/cm, respectively. It is observed that dielectric constant decreases monotonously from about 830 to 630 with increasing temperature ranging from 20 to 50/spl deg/C. Finally, it is found that the BTS/sub 15/ thin film shows a sufficient ferroelectricity and is an attractive material for the functional ferroelectric devices, such as thermal-type infrared sensor.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124146772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195934
Longtu Li, Zengping Xing, Xiangcheng Chu, Z. Gui
Experiments show that there is a limited pace in stepper Ultrasonic Motor (USM), and most of the work on high resolution of stepper USM are spread out above this limit. This paper presents a novel way of improving the resolution of stepper USM, which is based on the principle of Differential Composite Motion (DCM). This method also improves the torque of Stepper USM working in low pace, a higher resolution and larger torque of stepper USM could be obtained by this method in low pace.
{"title":"A method of improving the resolution and torque of stepper ultrasonic motor","authors":"Longtu Li, Zengping Xing, Xiangcheng Chu, Z. Gui","doi":"10.1109/ISAF.2002.1195934","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195934","url":null,"abstract":"Experiments show that there is a limited pace in stepper Ultrasonic Motor (USM), and most of the work on high resolution of stepper USM are spread out above this limit. This paper presents a novel way of improving the resolution of stepper USM, which is based on the principle of Differential Composite Motion (DCM). This method also improves the torque of Stepper USM working in low pace, a higher resolution and larger torque of stepper USM could be obtained by this method in low pace.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125225726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195862
J. Koh, A. Lisauskas, A. Grishin
Silver tantalate niobate, which shows excellent microwave properties, was selected for this dielectric relaxation study. 4 /spl mu/m gap Au(500nm)/Cr(10nm)/Ag(Ta,Nb)O/sub 3/(0.4/spl mu/m) interdigital capacitors (IDC) fabricated on LaAlO/sub 3/ (LAO) and Al/sub 2/O/sub 3/ (sapphire) substrates were used as test structures. Frequency dispersion in the range 1 kHz to 1 MHz, loss tan/spl delta/, tunability and K-factor @ 100 kV/cm and 1 MHz were about 8.4%, 5.9%, 0.0033 and 17.8 and 3.5%, 3.8%, 0.0035 and 9.9 for IDCs on LAO and sapphire, respectively. Switching the voltage in stair-case mode results in slow and weak relaxation of the capacitance: at 50 kV/cm it was less than 0.05 % for 70 sec. Relaxation of leakage current follows power law: |I(t)/I/sub /spl infin//-1| = (t/12 s)/sup -0.98/.
{"title":"Relaxation characteristics of Ag(Ta,Nb)O/sub 3/ thin film varactors","authors":"J. Koh, A. Lisauskas, A. Grishin","doi":"10.1109/ISAF.2002.1195862","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195862","url":null,"abstract":"Silver tantalate niobate, which shows excellent microwave properties, was selected for this dielectric relaxation study. 4 /spl mu/m gap Au(500nm)/Cr(10nm)/Ag(Ta,Nb)O/sub 3/(0.4/spl mu/m) interdigital capacitors (IDC) fabricated on LaAlO/sub 3/ (LAO) and Al/sub 2/O/sub 3/ (sapphire) substrates were used as test structures. Frequency dispersion in the range 1 kHz to 1 MHz, loss tan/spl delta/, tunability and K-factor @ 100 kV/cm and 1 MHz were about 8.4%, 5.9%, 0.0033 and 17.8 and 3.5%, 3.8%, 0.0035 and 9.9 for IDCs on LAO and sapphire, respectively. Switching the voltage in stair-case mode results in slow and weak relaxation of the capacitance: at 50 kV/cm it was less than 0.05 % for 70 sec. Relaxation of leakage current follows power law: |I(t)/I/sub /spl infin//-1| = (t/12 s)/sup -0.98/.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128427388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195865
V. Bystrov, M. Green, A. Sapronova, G. Ovtchinnikova, T. R. Tazieva, A. Soloshenko, B. Zapol
Hydrogen bonds and proton transfer play an important key role in hydrogen-bonded ferroelectrics phase transitions, in protein folding and conformation changes in DNA, and in the biomembrane's ion channels. In this presentation we analyze the possible mechanisms of proton subsystem's influence on the phase or conformation transition. Two main approaches are considered: 1) continuum condensed matter physics description-soliton models; 2) quantum-chemical ab initio calculations on the basis of Gaussian98 software. The main results of both representations are that at the first step of transition the protons cascade are arising with agreements of experimental observations. We discuss new possible quantum mechanism of this proton cascade and new effects in proton transfer in ferroelectrics and related systems.
{"title":"Hydrogen bonds and proton transfer in ferroelectrics and related materials (Molecular chains, proteins, DNA): ab initio Gaussian-98 calculations and soliton models","authors":"V. Bystrov, M. Green, A. Sapronova, G. Ovtchinnikova, T. R. Tazieva, A. Soloshenko, B. Zapol","doi":"10.1109/ISAF.2002.1195865","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195865","url":null,"abstract":"Hydrogen bonds and proton transfer play an important key role in hydrogen-bonded ferroelectrics phase transitions, in protein folding and conformation changes in DNA, and in the biomembrane's ion channels. In this presentation we analyze the possible mechanisms of proton subsystem's influence on the phase or conformation transition. Two main approaches are considered: 1) continuum condensed matter physics description-soliton models; 2) quantum-chemical ab initio calculations on the basis of Gaussian98 software. The main results of both representations are that at the first step of transition the protons cascade are arising with agreements of experimental observations. We discuss new possible quantum mechanism of this proton cascade and new effects in proton transfer in ferroelectrics and related systems.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127181306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195958
W. Ren, S-F. Liu, B. Mukherjee
The temperature dependence of dielectric properties and phase transitions of <001> oriented (1-x)Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-xPbTiO/sub 3/ (PZN-PT) single crystals for x = 4.5% and x = 8% have been investigated as a function of DC bias field. These crystals exhibit frequency dispersion and increasing the PT content in die crystals suppresses the degree of relaxor behavior. As the bias field increases over a critical value, the temperature of the tetragonal-cubic phase transition increases but the temperature of the rhombohedral-tetragonal phase transition decreases with bias field. A bias field can stabilize the tetragonal phase in <001> oriented PZN-PT crystals resulting in a long-range ordered state and induced normal ferroelectric behavior.
{"title":"Dielectric properties and phase transitions of <001>-oriented Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ single crystals","authors":"W. Ren, S-F. Liu, B. Mukherjee","doi":"10.1109/ISAF.2002.1195958","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195958","url":null,"abstract":"The temperature dependence of dielectric properties and phase transitions of <001> oriented (1-x)Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-xPbTiO/sub 3/ (PZN-PT) single crystals for x = 4.5% and x = 8% have been investigated as a function of DC bias field. These crystals exhibit frequency dispersion and increasing the PT content in die crystals suppresses the degree of relaxor behavior. As the bias field increases over a critical value, the temperature of the tetragonal-cubic phase transition increases but the temperature of the rhombohedral-tetragonal phase transition decreases with bias field. A bias field can stabilize the tetragonal phase in <001> oriented PZN-PT crystals resulting in a long-range ordered state and induced normal ferroelectric behavior.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133300547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195950
K. Nakamura
This paper describes a new high coupling piezoelectric crystal of KNbO/sub 3/ as well as practically used piezoelectric crystals such as LiNbO/sub 3/ and LiTaO/sub 3/, focusing on the orientation dependence of piezoelectric properties, domain structures, and various applications. Another related topic of this paper is domain inversion induced by some heat treatment of ferroelectric crystals and its applications.
{"title":"Piezoelectric applications of ferroelectric single crystals","authors":"K. Nakamura","doi":"10.1109/ISAF.2002.1195950","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195950","url":null,"abstract":"This paper describes a new high coupling piezoelectric crystal of KNbO/sub 3/ as well as practically used piezoelectric crystals such as LiNbO/sub 3/ and LiTaO/sub 3/, focusing on the orientation dependence of piezoelectric properties, domain structures, and various applications. Another related topic of this paper is domain inversion induced by some heat treatment of ferroelectric crystals and its applications.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129630510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195896
K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto
Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.
{"title":"Effect of heat treatment on electric properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by two-dimensional RF magnetron sputtering","authors":"K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto","doi":"10.1109/ISAF.2002.1195896","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195896","url":null,"abstract":"Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129730891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195877
H. Fujisawa, T. Yagi, M. Shimizu, H. Niu
Domain motions in epitaxial Pb(Zr,Ti)O/sub 3/ thin film capacitors were investigated by piezoresponse scanning force microscopy (PFM) and switching current measurements. PFM observations revealed that switched domains increased from 8 to 92% of the scanning area as the switching pulse width increased from 80 to 200ns. Switching currents were successfully measured using a resistance load circuit built in the PFM system. Rapid drop at the trailing edge of switching current transients suggests that domain motions immediately froze at the removal of the external voltage when the switching pulse width was shorter than the switching time (/spl sim/250ns). Therefore, it can be considered that PFM images obtained after switching pulses with a shorter width than the switching time revealed transient domain structures during the polarization switching period. The shape index and switching time of the Ishibashi theory can be obtained as 3.6 and 165ns from PFM observations and 2.5 and 180ns from switching current measurements, respectively.
{"title":"Domain motions in epitaxial Pb(Zr,Ti)O/sub 3/ thin film capacitors by piezoresponse scanning force microscopy","authors":"H. Fujisawa, T. Yagi, M. Shimizu, H. Niu","doi":"10.1109/ISAF.2002.1195877","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195877","url":null,"abstract":"Domain motions in epitaxial Pb(Zr,Ti)O/sub 3/ thin film capacitors were investigated by piezoresponse scanning force microscopy (PFM) and switching current measurements. PFM observations revealed that switched domains increased from 8 to 92% of the scanning area as the switching pulse width increased from 80 to 200ns. Switching currents were successfully measured using a resistance load circuit built in the PFM system. Rapid drop at the trailing edge of switching current transients suggests that domain motions immediately froze at the removal of the external voltage when the switching pulse width was shorter than the switching time (/spl sim/250ns). Therefore, it can be considered that PFM images obtained after switching pulses with a shorter width than the switching time revealed transient domain structures during the polarization switching period. The shape index and switching time of the Ishibashi theory can be obtained as 3.6 and 165ns from PFM observations and 2.5 and 180ns from switching current measurements, respectively.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133886965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-05-28DOI: 10.1109/ISAF.2002.1195964
Y. Bing, Z. Ye
Growth and characterization of the single crystals of complex perovskite (1-x)Pb(Sc/sub 1/2/Nb/sub 1/2/)O/sub 3/-xPbTiO/sub 3/ [PSNT] with composition near the MPB (x=0.425) are reported in this paper. The PSNT crystals were grown by high temperature solution method using the (PbO + /spl delta/B/sub 2/O/sub 3/) system as flux. By analyzing the defects and morphology of the as-grown crystals, we have optimized the growth parameters and the flux system, leading to a significant improvement in the quality of crystal grown. Domain observation by polarized light microscopy reveals that the structure of the PSNT57.5/42.5 crystal has very complex symmetry at room temperature. The PSNT crystals have been characterized by means of the X-ray, dielectric and ferroelectric measurements.
{"title":"Growth and characterization of relaxor ferroelectric (1-x)Pb(Sc/sub 1/2/Nb/sub 1/2/)O/sub 3/ - xPbTiO/sub 3/ single crystals","authors":"Y. Bing, Z. Ye","doi":"10.1109/ISAF.2002.1195964","DOIUrl":"https://doi.org/10.1109/ISAF.2002.1195964","url":null,"abstract":"Growth and characterization of the single crystals of complex perovskite (1-x)Pb(Sc/sub 1/2/Nb/sub 1/2/)O/sub 3/-xPbTiO/sub 3/ [PSNT] with composition near the MPB (x=0.425) are reported in this paper. The PSNT crystals were grown by high temperature solution method using the (PbO + /spl delta/B/sub 2/O/sub 3/) system as flux. By analyzing the defects and morphology of the as-grown crystals, we have optimized the growth parameters and the flux system, leading to a significant improvement in the quality of crystal grown. Domain observation by polarized light microscopy reveals that the structure of the PSNT57.5/42.5 crystal has very complex symmetry at room temperature. The PSNT crystals have been characterized by means of the X-ray, dielectric and ferroelectric measurements.","PeriodicalId":415725,"journal":{"name":"Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130978783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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