Pub Date : 2016-08-18DOI: 10.1109/NUSOD.2016.7547016
M. Kopytko, A. Jóźwikowska, K. Jóźwikowski, P. Martyniuk, M. Nietopiel
We have proposed the method to obtain high effective quantum efficiency in uncooled LWIR HgCdTe photodiodes. We have designed the stacked multi junction photodiodes working in non-equilibrium conditions. The effective quantum efficiency being the product of quantum efficiency and photoelectrical gain can achieve significant values, much greater than 100%, when the structure is reverse biased.
{"title":"A method of obtaining high quantum efficiency in uncooled LWIR HgCdTe photodetectors","authors":"M. Kopytko, A. Jóźwikowska, K. Jóźwikowski, P. Martyniuk, M. Nietopiel","doi":"10.1109/NUSOD.2016.7547016","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547016","url":null,"abstract":"We have proposed the method to obtain high effective quantum efficiency in uncooled LWIR HgCdTe photodiodes. We have designed the stacked multi junction photodiodes working in non-equilibrium conditions. The effective quantum efficiency being the product of quantum efficiency and photoelectrical gain can achieve significant values, much greater than 100%, when the structure is reverse biased.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124107085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-18DOI: 10.1109/NUSOD.2016.7547020
C. Broderick, W. Xiong, J. Rorison
We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3-5 μm wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.
{"title":"Theory of InGaBiAs dilute bismide alloys for highly efficient InP-based mid-infrared semiconductor lasers","authors":"C. Broderick, W. Xiong, J. Rorison","doi":"10.1109/NUSOD.2016.7547020","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547020","url":null,"abstract":"We present a theoretical analysis of the properties and performance of mid-infrared dilute bismide quantum well (QW) lasers grown on InP substrates. We analyse the band structure of strained InGaBiAs alloys and quantify their potential for the development of mid-infrared semiconductor lasers. In addition to identifying the permissible growth combinations for this class of laser structures, we perform a comprehensive analysis of the performance of a series of ideal laser structures. We investigate the variation of key material and device parameters on the alloy composition, QW thickness and epitaxial strain, and on this basis identify optimised laser structures for emission across the 3-5 μm wavelength range. Our theoretical analysis suggests that InP-based dilute bismide alloys are an extremely promising candidate material system for the development of highly efficient and temperature stable laser diodes operating in the mid-infrared, and also that this class of laser structures is highly compatible with existing InP-based device architectures.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124206500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7546995
J. Shibayama, Masato Itoh, J. Yamauchi, H. Nakano
To efficiently analyze the electromagnetic problems in cylindrical structures, we develop a locally one-dimensional finite-difference time-domain (FDTD) method in cylindrical coordinates. The Sherman-Morrison formula is used to solve a cyclic matrix, and the image theory is introduced to treat a perfect electric conductor. As an application, we analyze a metal disc-type terahertz surface wave splitter. The computation time is reduced to approximately half that of the explicit FDTD method, while maintaining the comparable accuracy.
{"title":"Analysis of a metal disc-type terahertz surface wave splitter using the cylindrical LOD-FDTD method","authors":"J. Shibayama, Masato Itoh, J. Yamauchi, H. Nakano","doi":"10.1109/NUSOD.2016.7546995","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7546995","url":null,"abstract":"To efficiently analyze the electromagnetic problems in cylindrical structures, we develop a locally one-dimensional finite-difference time-domain (FDTD) method in cylindrical coordinates. The Sherman-Morrison formula is used to solve a cyclic matrix, and the image theory is introduced to treat a perfect electric conductor. As an application, we analyze a metal disc-type terahertz surface wave splitter. The computation time is reduced to approximately half that of the explicit FDTD method, while maintaining the comparable accuracy.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122085745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547035
H. Si, Jianhui Yu, Huihui Lu, Jieyuan Tang, J. Zhang, Heyuan Guan, Yunhan Luo, Zhe Chen
In this paper, we proposed surface plasmonic resonance (SPR) sensor based on microfiber coated with gold nanowires. Using finite element method, this SPR-based fiberoptic sensor is investigated. Dependence of sensitivity of the sensor on the microfiber radius is simulated for analyte refractive index of 1.33-1.34. The simulation shows that there is an optimized microfiber radius of 8.5μm, yielding to the highest sensitivity of 4400nm/RIU among the radius of 7.5μm-10μm.
{"title":"High sensitivity SPR sensor based on microfiber coated with gold nanowires","authors":"H. Si, Jianhui Yu, Huihui Lu, Jieyuan Tang, J. Zhang, Heyuan Guan, Yunhan Luo, Zhe Chen","doi":"10.1109/NUSOD.2016.7547035","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547035","url":null,"abstract":"In this paper, we proposed surface plasmonic resonance (SPR) sensor based on microfiber coated with gold nanowires. Using finite element method, this SPR-based fiberoptic sensor is investigated. Dependence of sensitivity of the sensor on the microfiber radius is simulated for analyte refractive index of 1.33-1.34. The simulation shows that there is an optimized microfiber radius of 8.5μm, yielding to the highest sensitivity of 4400nm/RIU among the radius of 7.5μm-10μm.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126697390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547021
Yun Zhang, Xiaodong Wang, B. Wang, Liwei Hou, Xiaoyao Chen, Yawei Kuang, M. Pan
Design of ion implantation scheme for the planar GaAs blocked-impurity-band (BIB) detectors is performed by numerical simulation. The device structure and the preparation process are presented. It is demonstrated that the implanted Si ion concentration of the absorbing region and the contact region are 5×1015 cm-3 and 4×1019 cm-3, respectively, and can be implemented by four-step implantation with different ion energies and doses.
{"title":"Design consideration for ion-implanted planar GaAs blocked-impurity-band detectors","authors":"Yun Zhang, Xiaodong Wang, B. Wang, Liwei Hou, Xiaoyao Chen, Yawei Kuang, M. Pan","doi":"10.1109/NUSOD.2016.7547021","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547021","url":null,"abstract":"Design of ion implantation scheme for the planar GaAs blocked-impurity-band (BIB) detectors is performed by numerical simulation. The device structure and the preparation process are presented. It is demonstrated that the implanted Si ion concentration of the absorbing region and the contact region are 5×10<sup>15</sup> cm<sup>-3</sup> and 4×10<sup>19</sup> cm<sup>-3</sup>, respectively, and can be implemented by four-step implantation with different ion energies and doses.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"141 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114016149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547089
Y. Kuang, Yushen Liu, Xifeng Yang, Debao Zhang, Yulong Ma, X. Hong, Z. Shao, Jinfu Feng
Two dimensional model of graphene silicon heterojunction solar cell with an boron doped surface layer is structured using Silvaco TCAD tools by accurate control of diffusion process. The introduction of inverse doped layer obviously improved the efficiency of heterojunction photovoltaic cell.
{"title":"Numerical simulation study of graphene silicon solar cell with boron diffusion layer","authors":"Y. Kuang, Yushen Liu, Xifeng Yang, Debao Zhang, Yulong Ma, X. Hong, Z. Shao, Jinfu Feng","doi":"10.1109/NUSOD.2016.7547089","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547089","url":null,"abstract":"Two dimensional model of graphene silicon heterojunction solar cell with an boron doped surface layer is structured using Silvaco TCAD tools by accurate control of diffusion process. The introduction of inverse doped layer obviously improved the efficiency of heterojunction photovoltaic cell.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114808448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547065
Seoung-Hwan Park, W. Hong, Jong-Jae Kim, B. Kim, D. Ahn
Effects of spontaneous polarization on electronic and optical properties of ultraviolet (UV) BxAlyGa1-x-yN/AlN quantum well (QW) structures were using the multiband effective-mass theory. The spontaneous emission peak begins to decrease when the boron composition exceeds a critical value. The critical value is found to increase rapidly with decreasing the absolute value of the spontaneous polarization constant. In addition, the light intensity is reduced with decreasing spontaneous polarization. However, the spontaneous emission peak of BAlGaN/AlN QW structures is found to be greatly improved with the inclusion of the boron, irrespective of the spontaneous polarization. Hence, we expect that BAlGaN/AlN QW structures can be used as a high-efficiency light source for optoelectronic applications in ultraviolet spectral region.
{"title":"Effects of spontaneous polarization on optical properties of ultraviolet BAlGaN/AlN quantum well structures","authors":"Seoung-Hwan Park, W. Hong, Jong-Jae Kim, B. Kim, D. Ahn","doi":"10.1109/NUSOD.2016.7547065","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547065","url":null,"abstract":"Effects of spontaneous polarization on electronic and optical properties of ultraviolet (UV) BxAlyGa1-x-yN/AlN quantum well (QW) structures were using the multiband effective-mass theory. The spontaneous emission peak begins to decrease when the boron composition exceeds a critical value. The critical value is found to increase rapidly with decreasing the absolute value of the spontaneous polarization constant. In addition, the light intensity is reduced with decreasing spontaneous polarization. However, the spontaneous emission peak of BAlGaN/AlN QW structures is found to be greatly improved with the inclusion of the boron, irrespective of the spontaneous polarization. Hence, we expect that BAlGaN/AlN QW structures can be used as a high-efficiency light source for optoelectronic applications in ultraviolet spectral region.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121954080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7546996
A. Rakić, Gary Agnew, X. Qi, T. Taimre, Y. Lim, K. Bertling, She Han, S. Wilson, A. Grier, I. Kundu, Lianhe H. Li, A. Valavanis, P. Dean, Z. Ikonić, J. Cooper, S. Khanna, M. Lachab, Edmund H. Linfield, A. Davies, P. Harrison, D. Indjin
Remarkable progress in terahertz (THz) technology over the past decade has been driven by the potential applications of THz waves in areas such as biomedical imaging, long-range screening, and organic materials identification [1]. This growth is in no small measure related to the success of the quantum cascade laser (QCL) which has established itself as one of the most promising radiation sources at terahertz frequencies [2]. The appeal of these novel semiconductor lasers stems from their compact size, broad spectral coverage (~ 1-5 THz), and high output powers [3]. The ability of THz QCLs to generate coherent emission with quantum noise-limited linewidths, make them particularly suited to the development of interferometric THz sensing and imaging systems.
{"title":"Terahertz frequency quantum cascade lasers: Optical feedback effects and applications","authors":"A. Rakić, Gary Agnew, X. Qi, T. Taimre, Y. Lim, K. Bertling, She Han, S. Wilson, A. Grier, I. Kundu, Lianhe H. Li, A. Valavanis, P. Dean, Z. Ikonić, J. Cooper, S. Khanna, M. Lachab, Edmund H. Linfield, A. Davies, P. Harrison, D. Indjin","doi":"10.1109/NUSOD.2016.7546996","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7546996","url":null,"abstract":"Remarkable progress in terahertz (THz) technology over the past decade has been driven by the potential applications of THz waves in areas such as biomedical imaging, long-range screening, and organic materials identification [1]. This growth is in no small measure related to the success of the quantum cascade laser (QCL) which has established itself as one of the most promising radiation sources at terahertz frequencies [2]. The appeal of these novel semiconductor lasers stems from their compact size, broad spectral coverage (~ 1-5 THz), and high output powers [3]. The ability of THz QCLs to generate coherent emission with quantum noise-limited linewidths, make them particularly suited to the development of interferometric THz sensing and imaging systems.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132215938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547064
M. Zohar, Z. Fradkin, M. Auslender, S. Hava
We propose and design high efficiency thin Photodetectors (PDs), using micro-cell gratings, which enable near-field enhanced (NFE) mid IR absorption by confining the EM fields to the absorber region. These PD types have a different operation principle as compared to the conventional PDs they replace.
{"title":"High sensitivity photodetectors based on nanometer scaled periodic multilayered structures","authors":"M. Zohar, Z. Fradkin, M. Auslender, S. Hava","doi":"10.1109/NUSOD.2016.7547064","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547064","url":null,"abstract":"We propose and design high efficiency thin Photodetectors (PDs), using micro-cell gratings, which enable near-field enhanced (NFE) mid IR absorption by confining the EM fields to the absorber region. These PD types have a different operation principle as compared to the conventional PDs they replace.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129969201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547094
D. Guo, D. Vasileska
In this work, a diffusion-reaction model was employed to study Cu's role in light soaking effect of CdTe solar cells. Our simulation shows that both passivation of Cu dopants and Cu migration under light soak could cause device performance enhancement. The simulation result also suggests that 10-13 cm2/s diffusivity of Cu interstitials could explain the 10-hour long light soaking effect at 65°C.
{"title":"Modeling of light soaking effect in CdTe solar cells","authors":"D. Guo, D. Vasileska","doi":"10.1109/NUSOD.2016.7547094","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547094","url":null,"abstract":"In this work, a diffusion-reaction model was employed to study Cu's role in light soaking effect of CdTe solar cells. Our simulation shows that both passivation of Cu dopants and Cu migration under light soak could cause device performance enhancement. The simulation result also suggests that 10-13 cm2/s diffusivity of Cu interstitials could explain the 10-hour long light soaking effect at 65°C.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126553619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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