Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7546994
K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel
This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vector. In this same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients and the gradient of temperature on the physical parameters of the heterostructure is taken into account.
{"title":"The numerical method for solving the transport equations in HgCdTe heterostructures using the nonequilibrium distribution functions","authors":"K. Jóźwikowski, A. Jóźwikowska, M. Nietopiel","doi":"10.1109/NUSOD.2016.7546994","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7546994","url":null,"abstract":"This paper presents a numerical method for solving the set of transport equations in semiconductor heterostructures by using the non-equilibrium distribution function for electrons and holes. This method enables the calculation of carrier concentration, carrier mobility and entropy by integrations in the space of wave vector. In this same way the electrical current density and density of entropy currents are determined. The influence of quasi-Fermi energy gradients and the gradient of temperature on the physical parameters of the heterostructure is taken into account.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"439 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132751070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547048
G. Putrino, J. Dell, L. Faraone
We present preliminary findings regarding an optical cross-bar switch concept based on integrated silicon photonics waveguides and a MEMS device. Finite difference time domain simulations were performed were performed at a wavelength of 1550 nm to validate the initial design. Simulations indicate that there is a 9 dB difference in output optical power that can be achieved between the two waveguides.
{"title":"An optical MEMS cross-bar switch","authors":"G. Putrino, J. Dell, L. Faraone","doi":"10.1109/NUSOD.2016.7547048","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547048","url":null,"abstract":"We present preliminary findings regarding an optical cross-bar switch concept based on integrated silicon photonics waveguides and a MEMS device. Finite difference time domain simulations were performed were performed at a wavelength of 1550 nm to validate the initial design. Simulations indicate that there is a 9 dB difference in output optical power that can be achieved between the two waveguides.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115640853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547007
Mike Smith, C. D. Sterke, B. Kuhlmey, C. Poulton, Mikhail Lapine, Christian Wolff
Overcoming stimulated Brillouin scattering (SBS) is a major challenge in optical telecommunications networks and in fiber lasers. We evaluate the SBS gain coefficient for an all-dielectric composite material comprising a cubic, subwavelength array of spheres in a uniform background. We demonstrate total SBS suppression in fused silica using GaAs spheres.
{"title":"Suppression of stimulated Brillouin scattering in composite media","authors":"Mike Smith, C. D. Sterke, B. Kuhlmey, C. Poulton, Mikhail Lapine, Christian Wolff","doi":"10.1109/NUSOD.2016.7547007","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547007","url":null,"abstract":"Overcoming stimulated Brillouin scattering (SBS) is a major challenge in optical telecommunications networks and in fiber lasers. We evaluate the SBS gain coefficient for an all-dielectric composite material comprising a cubic, subwavelength array of spheres in a uniform background. We demonstrate total SBS suppression in fused silica using GaAs spheres.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117337693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547096
Daniel A. Jacobs, Xiao-qiang Fu, K. Weber, K. Catchpole, T. White
We have modelled the effect of ionic motion in MAPbI3 cells, deepening the uuderstanding of how these mobile species can result in current-voltage hysteresis. In addition, we present a quantitative model for photo-deactivation of carrier traps to explain the observed increase in photoluminesence efficiency upon light-soaking.
{"title":"Modelling of slow transient processes in organo-metal halide perovskites","authors":"Daniel A. Jacobs, Xiao-qiang Fu, K. Weber, K. Catchpole, T. White","doi":"10.1109/NUSOD.2016.7547096","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547096","url":null,"abstract":"We have modelled the effect of ionic motion in MAPbI3 cells, deepening the uuderstanding of how these mobile species can result in current-voltage hysteresis. In addition, we present a quantitative model for photo-deactivation of carrier traps to explain the observed increase in photoluminesence efficiency upon light-soaking.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"654 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121990883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547063
B. Zhang, J. Song, W. Ning, W. Wang, F. Guo
A photovoltaic six stacked In0.15Ga0.85As/GaAs quantum dot infrared photodetector detector (QDIP) with a Al0.3Ga0.7As single-side blocking layer is investigated with simulation software. The current-voltage (I-V) characteristics curve is simulated including dark current. Compared with dark current, zero-drift is found in photocurrent. The voltages at which zero-bias offset occur is studied with different power of illumination.
{"title":"Zero-drift of the photocurrent in photovoltaic QDIP","authors":"B. Zhang, J. Song, W. Ning, W. Wang, F. Guo","doi":"10.1109/NUSOD.2016.7547063","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547063","url":null,"abstract":"A photovoltaic six stacked In0.15Ga0.85As/GaAs quantum dot infrared photodetector detector (QDIP) with a Al0.3Ga0.7As single-side blocking layer is investigated with simulation software. The current-voltage (I-V) characteristics curve is simulated including dark current. Compared with dark current, zero-drift is found in photocurrent. The voltages at which zero-bias offset occur is studied with different power of illumination.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2018 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120847154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547059
P. Bardella, W. Chow, I. Montrosset
We propose a general procedure that we used for the design of semiconductor integrated coupled cavity lasers taking advantage of the Photon-Photon Resonance effect to increase their direct modulation bandwidth. The procedure, based on an analysis at threshold of the longitudinal complete cavity modes, is combined with dynamic simulations of the lasers small and large signal modulations. As an example, we report the study of the bandwidth extension in two mutually coupled cavity DBR lasers.
{"title":"Dynamic simulations of integrated couped cavity lasers","authors":"P. Bardella, W. Chow, I. Montrosset","doi":"10.1109/NUSOD.2016.7547059","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547059","url":null,"abstract":"We propose a general procedure that we used for the design of semiconductor integrated coupled cavity lasers taking advantage of the Photon-Photon Resonance effect to increase their direct modulation bandwidth. The procedure, based on an analysis at threshold of the longitudinal complete cavity modes, is combined with dynamic simulations of the lasers small and large signal modulations. As an example, we report the study of the bandwidth extension in two mutually coupled cavity DBR lasers.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125917520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547085
A. Jóźwikowska, K. Jóźwikowski
In this work a numerical iterative method for solving the nonlinear Poisson equation has been developed with the use of the diffusion-equation (parabolic) finite difference schema, to describe semiconductor hetero-structures. Procedures to control the convergence and stability of the method are presented. The approach enables us to solve the nonlinear Poisson equation in a small number of iterations, regardless of the level of hetero-structure complexity, type of electrical contacts and passive dielectric layers. Some numerical results obtained by this method for nBn Hg1-xCdxTe hetero-structure infrared detectors with metal contacts are reported.
{"title":"Improved diffusion-equation finite difference schema in numerical solution of the nonlinear Poisson equation","authors":"A. Jóźwikowska, K. Jóźwikowski","doi":"10.1109/NUSOD.2016.7547085","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547085","url":null,"abstract":"In this work a numerical iterative method for solving the nonlinear Poisson equation has been developed with the use of the diffusion-equation (parabolic) finite difference schema, to describe semiconductor hetero-structures. Procedures to control the convergence and stability of the method are presented. The approach enables us to solve the nonlinear Poisson equation in a small number of iterations, regardless of the level of hetero-structure complexity, type of electrical contacts and passive dielectric layers. Some numerical results obtained by this method for nBn Hg1-xCdxTe hetero-structure infrared detectors with metal contacts are reported.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122376811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547054
T. Kung, Jun-Yu Huang, Yuh‐Renn Wu
In this paper, We not only developed Poisson and drift-diffusion solver with effective tail states and field-dependent mobility, but set up a 2D random model to treat the doping effect on the organic materials. Understanding these models helps us in modeling OLED.
{"title":"Modeling of random dopant effects of organic light emitting diode with two dimensional simulation","authors":"T. Kung, Jun-Yu Huang, Yuh‐Renn Wu","doi":"10.1109/NUSOD.2016.7547054","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547054","url":null,"abstract":"In this paper, We not only developed Poisson and drift-diffusion solver with effective tail states and field-dependent mobility, but set up a 2D random model to treat the doping effect on the organic materials. Understanding these models helps us in modeling OLED.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124886916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1016/J.IJLEO.2016.07.053
T. Numai
{"title":"Enhancement of resonance frequency in a DFB-LD with internally incident modulated light","authors":"T. Numai","doi":"10.1016/J.IJLEO.2016.07.053","DOIUrl":"https://doi.org/10.1016/J.IJLEO.2016.07.053","url":null,"abstract":"","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"168 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131112295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547004
O. Marquardt, P. Corfdir, L. Geelhaar, M. Ramsteiner, O. Brandt
We study the electronic properties of GaAs superlattices consisting of zincblende and wurtzite segments using a ten-band k·p model. Our simulations indicate that the simultaneous treatment of both the Γ7 and the Γ8 conduction bands is essential to achieve an accurate description of electron wave functions and energies.
{"title":"Simulations of the electronic properties of GaAs polytype superlattices","authors":"O. Marquardt, P. Corfdir, L. Geelhaar, M. Ramsteiner, O. Brandt","doi":"10.1109/NUSOD.2016.7547004","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547004","url":null,"abstract":"We study the electronic properties of GaAs superlattices consisting of zincblende and wurtzite segments using a ten-band k·p model. Our simulations indicate that the simultaneous treatment of both the Γ<sub>7</sub> and the Γ<sub>8</sub> conduction bands is essential to achieve an accurate description of electron wave functions and energies.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133592410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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