E. Östman, U. Arnalds, V. Kapaklis, B. Hjörvarsson
For a small island of a magnetic material the magnetic state of the island is mainly determined by the exchange interaction and the shape anisotropy. Two or more islands placed in close proximity will interact through dipolar interactions. The state of a large system will thus be dictated by interactions at both these length scales. Enabling internal thermal fluctuations, e.g. by the choice of material, of the individual islands allows for the study of thermal ordering in extended nano-patterned magnetic arrays [1,2]. As a result nano-magnetic arrays represent an ideal playground for the study of physical model systems. Here we present three different studies all having used magneto-optical imaging techniques to observe, in real space, the order of the systems. The first study is done on a square lattice of circular islands. The remanent magnetic state of each island is a magnetic vortex structure and we can study the temperature dependence of the vortex nucleation and annihilation fields [3]. The second are long chains of dipolar coupled elongated islands where the magnetization direction in each island only can point in one of two possible directions. This creates a system which in many ways mimics the Ising model [4] and we can relate the correlation length to the temperature. The third one is a spin ice system where elongated islands are placed in a square lattice. Thermal excitations in such systems resemble magnetic monopoles [2] and we can investigate their properties as a function of temperature and lattice parameters. [1] V. Kapaklis et al., New J. Phys. 14, 035009 (2012) [2] V. Kapaklis et al., Nature Nanotech 9, 514(2014) [3] E. Östman et al.,New J. Phys. 16, 053002 (2014) [4] E. Östman et al.,Thermal ordering in mesoscopic Ising chains, In manuscript.
对于磁性材料的小磁岛，磁岛的磁态主要由磁岛的交换相互作用和磁岛的形状各向异性决定。两个或更多靠近的岛屿将通过偶极相互作用相互作用。因此，一个大系统的状态将由这两个长度尺度上的相互作用决定。通过选择材料，使单个岛的内部热波动成为可能，从而可以研究扩展纳米图案磁阵列中的热排序[1,2]。因此，纳米磁阵列是研究物理模型系统的理想场所。在这里，我们提出了三个不同的研究都使用磁光成像技术来观察，在现实空间中，系统的顺序。第一项研究是在圆形岛屿的方形格子上进行的。每个岛的剩磁态是一个磁涡旋结构，我们可以研究涡旋成核和湮灭场的温度依赖性[3]。第二种是长链的偶极耦合拉长岛，其中每个岛的磁化方向只能指向两个可能的方向之一。这创建了一个系统，它在许多方面模仿了Ising模型[4]，我们可以将相关长度与温度联系起来。第三种是自旋冰系统，其中细长的岛屿被放置在方形晶格中。这种系统中的热激发类似于磁单极子[2]，我们可以研究它们的性质作为温度和晶格参数的函数。[1] V. Kapaklis et et .，New J. physics . 14,035009 (2012) [2] V. Kapaklis et .， Nature nanotechnology 9,514 (2014) [3] E. Östman et al.，New J. physics . 16,053002 (2014) [4] E. Östman et al.，介观Ising链的热有序，in manuscript。
{"title":"Ordering and thermal excitations in dipolar coupled single domain magnet arrays (Presentation Recording)","authors":"E. Östman, U. Arnalds, V. Kapaklis, B. Hjörvarsson","doi":"10.1117/12.2188028","DOIUrl":"https://doi.org/10.1117/12.2188028","url":null,"abstract":"For a small island of a magnetic material the magnetic state of the island is mainly determined by the exchange interaction and the shape anisotropy. Two or more islands placed in close proximity will interact through dipolar interactions. The state of a large system will thus be dictated by interactions at both these length scales. Enabling internal thermal fluctuations, e.g. by the choice of material, of the individual islands allows for the study of thermal ordering in extended nano-patterned magnetic arrays [1,2]. As a result nano-magnetic arrays represent an ideal playground for the study of physical model systems. Here we present three different studies all having used magneto-optical imaging techniques to observe, in real space, the order of the systems. The first study is done on a square lattice of circular islands. The remanent magnetic state of each island is a magnetic vortex structure and we can study the temperature dependence of the vortex nucleation and annihilation fields [3]. The second are long chains of dipolar coupled elongated islands where the magnetization direction in each island only can point in one of two possible directions. This creates a system which in many ways mimics the Ising model [4] and we can relate the correlation length to the temperature. The third one is a spin ice system where elongated islands are placed in a square lattice. Thermal excitations in such systems resemble magnetic monopoles [2] and we can investigate their properties as a function of temperature and lattice parameters. [1] V. Kapaklis et al., New J. Phys. 14, 035009 (2012) [2] V. Kapaklis et al., Nature Nanotech 9, 514(2014) [3] E. Östman et al.,New J. Phys. 16, 053002 (2014) [4] E. Östman et al.,Thermal ordering in mesoscopic Ising chains, In manuscript.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129537083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Exciton dissociation at organic semiconductor donor-acceptor (D-A) heterojunctions is critical for the performance of organic photovoltaic (OPV) structures. Interfacial charge separation and recombination processes control device efficiency. We have investigated these fundamental interfacial issues using time-resolved two-photon photoemission (TR-2PPE), coupled with the formation of well-controlled D-A structures by organic molecular beam epitaxy. The interfacial electronic and molecular structure of these model interfaces was well-characterized using scanning tunneling microscopy and ultraviolet photoemission. Exciton dissociation dynamics were investigated by using a sub-picosecond pump pulse to create Pc π→π* transitions, producing a population of singlet (S1) Pc excitons. The subsequent decay dynamics of this population was monitored via photoemission with a time-delayed UV pulse. For CuPcC60 interfaces, S1 exciton population decay in the interfacial CuPc layer was much faster than decay in the bulk due to interfacial charge separation. The rate constant for exciton dissociation was found to be ≈ 7 x 10 12 sec-1 (≈ 140 fs). Excitons that lose energy via intersystem crossing (ISC) to triplet levels dissociate approximately 500 to 1000 times slower. The dependence of exciton dissociation on separation was also studied. Exciton dissociation falls of rapidly with distance from the interface. Dissociation from the 2nd, and subsequent, layers of H2Pc is reduced by at least a factor of 10 from that in the interfacial layer. Finally, investigations of the relative efficiency for interfacial exciton dissociation by alternative acceptors based on perylene cores, (perylene tetracarboxylic dianhydride, or PTCDA) compared to fullerene-based acceptors such as C60 will also be discussed.
有机半导体供体-受体(D-A)异质结上的激子解离对有机光伏(OPV)结构的性能至关重要。界面电荷分离和重组过程控制装置效率。我们利用时间分辨双光子光电发射技术(TR-2PPE)研究了这些基本的界面问题，并通过有机分子束外延形成了控制良好的D-A结构。利用扫描隧道显微镜和紫外光谱对这些模型界面的电子结构和分子结构进行了表征。利用亚皮秒泵浦脉冲产生Pc π→π*跃迁，产生单重态(S1) Pc激子，研究了激子解离动力学。该种群随后的衰变动力学是通过光发射与延时紫外脉冲监测。对于cupc60界面，由于界面电荷分离，S1激子在cupc60界面层中的衰减速度远快于块体中的衰减速度。激子解离的速率常数为≈7 x 10 12 sec-1(≈140 fs)。通过系统间交叉(ISC)失去能量到三重态能级的激子解离速度大约慢500到1000倍。还研究了激子解离对分离的依赖性。激子解离随离界面距离的增加而迅速下降。与界面层相比，与第2层及随后的H2Pc层的解离至少减少了10倍。最后，还将讨论基于苝核的替代受体(苝四羧酸二酐或PTCDA)与基于富勒烯的受体(如C60)的界面激子解离的相对效率。
{"title":"Exciton dissociation at organic small molecule donor-acceptor interfaces (Presentation Recording)","authors":"S. Robey","doi":"10.1117/12.2188266","DOIUrl":"https://doi.org/10.1117/12.2188266","url":null,"abstract":"Exciton dissociation at organic semiconductor donor-acceptor (D-A) heterojunctions is critical for the performance of organic photovoltaic (OPV) structures. Interfacial charge separation and recombination processes control device efficiency. We have investigated these fundamental interfacial issues using time-resolved two-photon photoemission (TR-2PPE), coupled with the formation of well-controlled D-A structures by organic molecular beam epitaxy. The interfacial electronic and molecular structure of these model interfaces was well-characterized using scanning tunneling microscopy and ultraviolet photoemission. Exciton dissociation dynamics were investigated by using a sub-picosecond pump pulse to create Pc π→π* transitions, producing a population of singlet (S1) Pc excitons. The subsequent decay dynamics of this population was monitored via photoemission with a time-delayed UV pulse. For CuPcC60 interfaces, S1 exciton population decay in the interfacial CuPc layer was much faster than decay in the bulk due to interfacial charge separation. The rate constant for exciton dissociation was found to be ≈ 7 x 10 12 sec-1 (≈ 140 fs). Excitons that lose energy via intersystem crossing (ISC) to triplet levels dissociate approximately 500 to 1000 times slower. The dependence of exciton dissociation on separation was also studied. Exciton dissociation falls of rapidly with distance from the interface. Dissociation from the 2nd, and subsequent, layers of H2Pc is reduced by at least a factor of 10 from that in the interfacial layer. Finally, investigations of the relative efficiency for interfacial exciton dissociation by alternative acceptors based on perylene cores, (perylene tetracarboxylic dianhydride, or PTCDA) compared to fullerene-based acceptors such as C60 will also be discussed.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128309759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. Bellotti, Hanqing Wen, B. Pinkie, M. Matsubara, F. Bertazzi
Understanding the radiative and non-radiative properties of semiconductor materials is a prerequisite for optimizing the performance of existing light emitters and detectors and for developing new device architectures based on novel materials. Due to the ever increasing complexity of novel semiconductor systems and their relative technological immaturity, it is essential to have design tools and simulation strategies that include the details of the microscopic physics and their dependence on the macroscopic (continuum) variables in the macroscopic device models. Towards this end, we have developed a robust full-band structure based approach that can be used to study the intrinsic material radiative and non-radiative properties and evaluate the same characteristics of low-dimensional device structures. A parallel effort is being carried out to model the effect of substrate driven stress/strain and material quality (dislocations and defects) on microscopic quantities such as non-radiative recombination rate. Using this modeling approach, we have extensively studied the radiative and non-radiative properties of both elemental (Si and Ge) and compound semiconductors (HgCdTe, InGaAs, InAsSb and InGaN). In this work we outline the details of the modelling approach, specifically the challenges and advantages related to the use of the full-band description of the material electronic structure. We will present a detailed comparison of the radiative and Auger recombination rates as a function of temperature and doping for HgCdTe and InAsSb that are two important materials for infrared detectors and emitters. Furthermore we will discuss the role of non-radiatiave Auger recombination processes in explaining the performance of light emitter diodes. Finally we will present the extension of the model to low dimensional structures employed in a number of light emitter and detector structures.
{"title":"Full-band structure modeling of the radiative and non-radiative properties of semiconductor materials and devices (Presentation Recording)","authors":"E. Bellotti, Hanqing Wen, B. Pinkie, M. Matsubara, F. Bertazzi","doi":"10.1117/12.2190357","DOIUrl":"https://doi.org/10.1117/12.2190357","url":null,"abstract":"Understanding the radiative and non-radiative properties of semiconductor materials is a prerequisite for optimizing the performance of existing light emitters and detectors and for developing new device architectures based on novel materials. Due to the ever increasing complexity of novel semiconductor systems and their relative technological immaturity, it is essential to have design tools and simulation strategies that include the details of the microscopic physics and their dependence on the macroscopic (continuum) variables in the macroscopic device models. Towards this end, we have developed a robust full-band structure based approach that can be used to study the intrinsic material radiative and non-radiative properties and evaluate the same characteristics of low-dimensional device structures. A parallel effort is being carried out to model the effect of substrate driven stress/strain and material quality (dislocations and defects) on microscopic quantities such as non-radiative recombination rate. Using this modeling approach, we have extensively studied the radiative and non-radiative properties of both elemental (Si and Ge) and compound semiconductors (HgCdTe, InGaAs, InAsSb and InGaN). In this work we outline the details of the modelling approach, specifically the challenges and advantages related to the use of the full-band description of the material electronic structure. We will present a detailed comparison of the radiative and Auger recombination rates as a function of temperature and doping for HgCdTe and InAsSb that are two important materials for infrared detectors and emitters. Furthermore we will discuss the role of non-radiatiave Auger recombination processes in explaining the performance of light emitter diodes. Finally we will present the extension of the model to low dimensional structures employed in a number of light emitter and detector structures.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126589956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Andryieuski, M. Petrov, A. Lavrinenko, S. Tretyakov
In this presentation we will discuss the analytical and numerical approaches to modeling electromagnetic properties of geometrically regular subwavelength 2D arrays of random resonant plasmonic particles. Amorphous metamaterials and metasurfaces attract interest of the scientific community due to promising technological implementations with cost-efficient methods of large-scale chemical nanoparticles synthesis as well as their self-organization. Random fluctuations of the particles size, shape, and/or composition are inevitable not only in the bottom-up synthesis, but also in conventional electron beam and photolithography fabrication. Despite the significant progress in large-scale fabrication, modeling and effective properties prediction of random/amorphous metamaterials and metasurfaces is still a challenge, which we address here. We present our results on analytical modelling of metasurfaces with regular periodic arrangements of resonant nanoparticles of random polarizability/size/material at normal plane-wave incidence. We show that randomness of the polarizability is related to increase in diffused scattering and we relate this phenomenon to a modification of the dipoles’ interaction constant. As a result, we obtain a simple analytical formula which describes diffuse scattering in such amorphous metasurfaces. Employing the supercell approach we numerically confirm the analytical results. The proposed approach can be easily extended from electrical dipole arrays and normal wave incidence to more general cases of electric and magnetic resonant particles and oblique incidence.
{"title":"Understanding of increased diffuse scattering in regular arrays of fluctuating resonant particles (Presentation Recording)","authors":"A. Andryieuski, M. Petrov, A. Lavrinenko, S. Tretyakov","doi":"10.1117/12.2186283","DOIUrl":"https://doi.org/10.1117/12.2186283","url":null,"abstract":"In this presentation we will discuss the analytical and numerical approaches to modeling electromagnetic properties of geometrically regular subwavelength 2D arrays of random resonant plasmonic particles. Amorphous metamaterials and metasurfaces attract interest of the scientific community due to promising technological implementations with cost-efficient methods of large-scale chemical nanoparticles synthesis as well as their self-organization. Random fluctuations of the particles size, shape, and/or composition are inevitable not only in the bottom-up synthesis, but also in conventional electron beam and photolithography fabrication. Despite the significant progress in large-scale fabrication, modeling and effective properties prediction of random/amorphous metamaterials and metasurfaces is still a challenge, which we address here. We present our results on analytical modelling of metasurfaces with regular periodic arrangements of resonant nanoparticles of random polarizability/size/material at normal plane-wave incidence. We show that randomness of the polarizability is related to increase in diffused scattering and we relate this phenomenon to a modification of the dipoles’ interaction constant. As a result, we obtain a simple analytical formula which describes diffuse scattering in such amorphous metasurfaces. Employing the supercell approach we numerically confirm the analytical results. The proposed approach can be easily extended from electrical dipole arrays and normal wave incidence to more general cases of electric and magnetic resonant particles and oblique incidence.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126036725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The spin Hall effect (SHE) and the inverse spin Hall effect (ISHE) are well established phenomena in current spintronics research. A third important effect is the current-induced spin polarization, which, within the Rashba model for a spin-orbit coupled two-dimensional disordered electron gas, has been predicted by Edelstein in 1990 and it is referred to as the Edelstein effect (EE). This effect is deeply connected to the above two effects thanks to a constraint dictated by the equation of motion. Less known is the inverse Edelstein effect (IEE), which is the Onsager reciprocal of the EE and according to which a charge current is generated by a non-equilibrium spin polarization. The IEE has been recently observed (Nature Commun. 4, 2944 (2013)) in a hybrid ferromagnetic-metal system. In this talk I provide a precise microscopic definition of the IEE and its description within the Rashba model. It turns out that the effect has a surprisingly simple interpretation when the spin-charge coupled drift-diffusion equations governing it are cast in the language of a SU(2) gauge theory, with the Rashba spin-orbit coupling playing the role of a generalized spin-dependent vector potential. After sketching briefly the derivation of the drift-diffusion equations, the latter are applied to the interpretation of the experiments. The role of spin-orbit coupling due to impurities is also considered, by showing that the strenght of the IEE can be controlled by the ratio of the spin relaxation rates associated to the two type of spin-orbit coupling.
自旋霍尔效应(SHE)和逆自旋霍尔效应(ISHE)是当前自旋电子学研究中公认的现象。第三个重要的效应是电流诱导的自旋极化，在自旋轨道耦合二维无序电子气体的Rashba模型中，Edelstein在1990年就预测到了这一点，并将其称为Edelstein效应(EE)。由于运动方程的约束，这种效应与上述两种效应密切相关。不太为人所知的是逆爱德斯坦效应(IEE)，它是EE的Onsager倒数，根据它，电荷电流是由非平衡自旋极化产生的。最近在一个铁磁-金属混合系统中观察到了IEE (Nature common . 4,2944(2013))。在这次演讲中，我提供了IEE的精确微观定义及其在Rashba模型中的描述。结果表明，当控制该效应的自旋-电荷耦合漂移-扩散方程以SU(2)规范理论的语言进行描述时，该效应有一个令人惊讶的简单解释，其中Rashba自旋-轨道耦合扮演广义自旋依赖向量势的角色。在简述了漂移扩散方程的推导后，将其应用于实验的解释。本文还考虑了杂质引起的自旋轨道耦合的作用，表明IEE的强度可以通过与两种自旋轨道耦合相关的自旋弛豫率的比值来控制。
{"title":"Microscopic theory of the inverse Edelstein effect (Presentation Recording)","authors":"R. Raimondi, K. Shen, G. Vignale","doi":"10.1117/12.2185847","DOIUrl":"https://doi.org/10.1117/12.2185847","url":null,"abstract":"The spin Hall effect (SHE) and the inverse spin Hall effect (ISHE) are well established phenomena in current spintronics research. A third important effect is the current-induced spin polarization, which, within the Rashba model for a spin-orbit coupled two-dimensional disordered electron gas, has been predicted by Edelstein in 1990 and it is referred to as the Edelstein effect (EE). This effect is deeply connected to the above two effects thanks to a constraint dictated by the equation of motion. Less known is the inverse Edelstein effect (IEE), which is the Onsager reciprocal of the EE and according to which a charge current is generated by a non-equilibrium spin polarization. The IEE has been recently observed (Nature Commun. 4, 2944 (2013)) in a hybrid ferromagnetic-metal system. In this talk I provide a precise microscopic definition of the IEE and its description within the Rashba model. It turns out that the effect has a surprisingly simple interpretation when the spin-charge coupled drift-diffusion equations governing it are cast in the language of a SU(2) gauge theory, with the Rashba spin-orbit coupling playing the role of a generalized spin-dependent vector potential. After sketching briefly the derivation of the drift-diffusion equations, the latter are applied to the interpretation of the experiments. The role of spin-orbit coupling due to impurities is also considered, by showing that the strenght of the IEE can be controlled by the ratio of the spin relaxation rates associated to the two type of spin-orbit coupling.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134456809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Roberts, Runyu Liu, Xiang Zhao, Lan Yu, Xiuling Li, D. Wasserman, V. Podolskiy
In Extraordinary Optical Transmission (EOT), a metallic film perforated with an array of [periodic] apertures exhibits transmission over 100% normalized to the total aperture area, at selected frequencies. EOT devices have potential applications as optical filters and as couplers in hybrid electro-optic contacts/devices. Traditional passive extraordinary optical transmission structures, typically demonstrate un-normalized transmission well below 50%, and are typically outperformed by simpler thin-film techniques. To overcome these limitations, we demonstrate a new breed of extraordinary optical transmission devices, by “burying” an extraordinary optical transmission grating in a dielectric matrix via a metal-assisted-chemical etching process. The resulting structure is an extraordinary optical transmission grating on top of a dielectric substrate with dielectric nano-pillars extruded through the grating apertures. These structures not only show significantly enhanced peak transmission when normalized to the open area of the metal film, but more importantly, peak transmission greater than that observed from the bare semiconductor surface. The structures were modeled using three-dimensional rigorous coupled wave analysis and characterized experimentally by Fourier transform infrared reflection and transmission spectroscopy, and the good agreement between the two has been demonstrated. The drastic enhancement of light transmission in our structures originates from structuring of high-index dielectric substrate, with pillars effectively guiding light through metal apertures.
{"title":"Colossal optical transmission through buried metal gratings (Presentation Recording)","authors":"C. Roberts, Runyu Liu, Xiang Zhao, Lan Yu, Xiuling Li, D. Wasserman, V. Podolskiy","doi":"10.1117/12.2188504","DOIUrl":"https://doi.org/10.1117/12.2188504","url":null,"abstract":"In Extraordinary Optical Transmission (EOT), a metallic film perforated with an array of [periodic] apertures exhibits transmission over 100% normalized to the total aperture area, at selected frequencies. EOT devices have potential applications as optical filters and as couplers in hybrid electro-optic contacts/devices. Traditional passive extraordinary optical transmission structures, typically demonstrate un-normalized transmission well below 50%, and are typically outperformed by simpler thin-film techniques. To overcome these limitations, we demonstrate a new breed of extraordinary optical transmission devices, by “burying” an extraordinary optical transmission grating in a dielectric matrix via a metal-assisted-chemical etching process. The resulting structure is an extraordinary optical transmission grating on top of a dielectric substrate with dielectric nano-pillars extruded through the grating apertures. These structures not only show significantly enhanced peak transmission when normalized to the open area of the metal film, but more importantly, peak transmission greater than that observed from the bare semiconductor surface. The structures were modeled using three-dimensional rigorous coupled wave analysis and characterized experimentally by Fourier transform infrared reflection and transmission spectroscopy, and the good agreement between the two has been demonstrated. The drastic enhancement of light transmission in our structures originates from structuring of high-index dielectric substrate, with pillars effectively guiding light through metal apertures.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132798919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Willie J Padilla, C. Watts, Christian C. Nadell, J. Montoya, S. Krishna
Single pixel cameras are useful imaging devices where it is difficult or infeasible to fashion focal plan arrays. For example in the Far Infrared (FIR) it is difficult to perform imaging by conventional detector arrays, owing to the cost and size of such an array. The typical single pixel camera uses a spatial light modulator (SLM) - placed in the conjugate image plane – and is used to sample various portions of the image. The spatially modulated light emerging from the SLM is then sent to a single detector where the light is condensed with suitable optics for detection. Conventional SLMs are either based on liquid crystals or digital mirror devices. As such these devices are limited in modulation speeds of order 30 kHz. Further there is little control over the type of light that is modulated. We present metamaterial based spatial light modulators which provide the ability to digitally encode images – with various measurement matrix coefficients – thus permitting high speed and fidelity imaging capability. In particular we use the Hadamard matrix and related S-matrix to encode images for single pixel imaging. Metamaterials thus permit imaging in regimes of the electromagnetic spectrum where conventional SLMs are not available. Additionally, metamaterials offer several salient features that are not available with commercial SLMs. For example, metamaterials may be used to enable hyperspectral, polarimetric, and phase sensitive imaging. We present the theory and experimental results of single pixel imaging with digital metamaterials in the far infrared and highlight the future of this exciting field.
{"title":"Metamaterial-based single pixel imaging system (Presentation Recording)","authors":"Willie J Padilla, C. Watts, Christian C. Nadell, J. Montoya, S. Krishna","doi":"10.1117/12.2189836","DOIUrl":"https://doi.org/10.1117/12.2189836","url":null,"abstract":"Single pixel cameras are useful imaging devices where it is difficult or infeasible to fashion focal plan arrays. For example in the Far Infrared (FIR) it is difficult to perform imaging by conventional detector arrays, owing to the cost and size of such an array. The typical single pixel camera uses a spatial light modulator (SLM) - placed in the conjugate image plane – and is used to sample various portions of the image. The spatially modulated light emerging from the SLM is then sent to a single detector where the light is condensed with suitable optics for detection. Conventional SLMs are either based on liquid crystals or digital mirror devices. As such these devices are limited in modulation speeds of order 30 kHz. Further there is little control over the type of light that is modulated. We present metamaterial based spatial light modulators which provide the ability to digitally encode images – with various measurement matrix coefficients – thus permitting high speed and fidelity imaging capability. In particular we use the Hadamard matrix and related S-matrix to encode images for single pixel imaging. Metamaterials thus permit imaging in regimes of the electromagnetic spectrum where conventional SLMs are not available. Additionally, metamaterials offer several salient features that are not available with commercial SLMs. For example, metamaterials may be used to enable hyperspectral, polarimetric, and phase sensitive imaging. We present the theory and experimental results of single pixel imaging with digital metamaterials in the far infrared and highlight the future of this exciting field.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132300927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kate J. Norris, G. Tompa, N. Sbrockey, N. Kobayashi
Although semiconductor wires exhibit unique properties that would benefit a range of devices, implementation of as-grown wires in a device brings challenges, in particular, for those that require large volume (e.g. thermoelectric (TE) devices). Therefore, a post-growth assembly of sub-micrometer-scale wires into a centimeter-scale structure would open new module architecture. In this paper, TE devices in the form of pellet (~1cm diameter) made of aggregated silicon (Si) wires will be described. Numerous Si wires were assembled into a 3D network with dimensions defined by a quartz ampule. Power generation was demonstrated at operational temperatures ~80°C and the performance was generalized for higher operational temperatures ~800°C.
{"title":"Thermoelectric pellets made of Si nanowires (Presentation Recording)","authors":"Kate J. Norris, G. Tompa, N. Sbrockey, N. Kobayashi","doi":"10.1117/12.2192445","DOIUrl":"https://doi.org/10.1117/12.2192445","url":null,"abstract":"Although semiconductor wires exhibit unique properties that would benefit a range of devices, implementation of as-grown wires in a device brings challenges, in particular, for those that require large volume (e.g. thermoelectric (TE) devices). Therefore, a post-growth assembly of sub-micrometer-scale wires into a centimeter-scale structure would open new module architecture. In this paper, TE devices in the form of pellet (~1cm diameter) made of aggregated silicon (Si) wires will be described. Numerous Si wires were assembled into a 3D network with dimensions defined by a quartz ampule. Power generation was demonstrated at operational temperatures ~80°C and the performance was generalized for higher operational temperatures ~800°C.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115679179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Our recently published results show a much reduced dark current and enhanced speed from our second-generation electron-Injection detectors, due to the introduction of an isolation method. However, these results have been limited to single-element detectors. A natural next step is to incorporate these new devices into a focal plane array (FPA), since we have already achieved very attractive results from an FPA based on the first-generation devices. Despite the high-performance characteristics of second generation devices, isolation introduces new processing steps and a robust procedure is required for realization of focal plane arrays (FPA) with good uniformity and yield. Here we report our systematic evaluation of the processing steps, and in particular the effect of the processing temperature, on the device dark current and uniformity. Our goal is to produce ultra-low dark current FPA based on isolated electron-injection detectors, and to approach single-photon sensitivity.
{"title":"Evaluation of different processing steps on the dark current of electron-injection detectors (Presentation Recording)","authors":"M. Rezaei, S. Jang, H. Mohseni","doi":"10.1117/12.2188755","DOIUrl":"https://doi.org/10.1117/12.2188755","url":null,"abstract":"Our recently published results show a much reduced dark current and enhanced speed from our second-generation electron-Injection detectors, due to the introduction of an isolation method. However, these results have been limited to single-element detectors. A natural next step is to incorporate these new devices into a focal plane array (FPA), since we have already achieved very attractive results from an FPA based on the first-generation devices. Despite the high-performance characteristics of second generation devices, isolation introduces new processing steps and a robust procedure is required for realization of focal plane arrays (FPA) with good uniformity and yield. Here we report our systematic evaluation of the processing steps, and in particular the effect of the processing temperature, on the device dark current and uniformity. Our goal is to produce ultra-low dark current FPA based on isolated electron-injection detectors, and to approach single-photon sensitivity.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123857790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Perhaps the most successful application of plasmonics to date has been in sensing, where the interaction of a nanoscale localized field with analytes leads to high-sensitivity detection in real time and in a label-free fashion. However, all previous designs have been based on passively excited surface plasmons, in which sensitivity is intrinsically limited by the low quality factors induced by metal losses. It has recently been proposed theoretically that surface plasmon sensors with active excitation (gain-enhanced) can achieve much higher sensitivities due to the amplification of the surface plasmons. Here, we experimentally demonstrate an active plasmon sensor that is free of metal losses and operating deep below the diffraction limit for visible light. Loss compensation leads to an intense and sharp lasing emission that is ultrasensitive to adsorbed molecules. We validated the efficacy of our sensor to detect explosives in air under normal conditions and have achieved a sub-part-per-billion detection limit, the lowest reported to date for plasmonic sensors with 2,4-dinitrotoluene and ammonium nitrate. The selectivity between 2,4-dinitrotoluene, ammoniumnitrate and nitrobenzene is on a par with other state-of-the-art explosives detectors. Our results show that monitoring the change of the lasing intensity is a superior method than monitoring the wavelength shift, as is widely used in passive surface plasmon sensors. We therefore envisage that nanoscopic sensors that make use of plasmonic lasing could become an important tool in security screening and biomolecular diagnostics.
{"title":"Plasmonic laser sensors (Presentation Recording)","authors":"R. Ma, S. Ota, Yimin Li, Sui Yang, Xiang Zhang","doi":"10.1117/12.2186086","DOIUrl":"https://doi.org/10.1117/12.2186086","url":null,"abstract":"Perhaps the most successful application of plasmonics to date has been in sensing, where the interaction of a nanoscale localized field with analytes leads to high-sensitivity detection in real time and in a label-free fashion. However, all previous designs have been based on passively excited surface plasmons, in which sensitivity is intrinsically limited by the low quality factors induced by metal losses. It has recently been proposed theoretically that surface plasmon sensors with active excitation (gain-enhanced) can achieve much higher sensitivities due to the amplification of the surface plasmons. Here, we experimentally demonstrate an active plasmon sensor that is free of metal losses and operating deep below the diffraction limit for visible light. Loss compensation leads to an intense and sharp lasing emission that is ultrasensitive to adsorbed molecules. We validated the efficacy of our sensor to detect explosives in air under normal conditions and have achieved a sub-part-per-billion detection limit, the lowest reported to date for plasmonic sensors with 2,4-dinitrotoluene and ammonium nitrate. The selectivity between 2,4-dinitrotoluene, ammoniumnitrate and nitrobenzene is on a par with other state-of-the-art explosives detectors. Our results show that monitoring the change of the lasing intensity is a superior method than monitoring the wavelength shift, as is widely used in passive surface plasmon sensors. We therefore envisage that nanoscopic sensors that make use of plasmonic lasing could become an important tool in security screening and biomolecular diagnostics.","PeriodicalId":432358,"journal":{"name":"SPIE NanoScience + Engineering","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122635312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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