Solid State Sciences最新文献_第8页

The dielectric characteristics of spray deposited α-Si3N4:ZnO thin films: The nitride effect on frequency-dependent capacitance and conductance profiles 喷雾沉积 α-Si3N4:ZnO 薄膜的介电特性：氮化物对频率相关电容和电导曲线的影响

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-07 DOI: 10.1016/j.solidstatesciences.2024.107754

Erhan İbrahimoğlu , Ahmet Demir , Fatih Çalışkan , Zafer Tatlı

The study focused on the effect of α-Si₃N₄ doping on the electrical/dielectric properties of ZnO thin films. Both α-Si₃N₄ doped and additive-free ZnO thin films were coated on p-Si substrates via a spray deposition method to achieve this. The electrical (current density (J)-voltage (V)) and dielectric properties (capacitance (C), conductance (G), dielectric loss (tanδ), reel/imaginary part of dielectric permittivity (ε′ and ε″) and electric modulus (M′ and M″)) were determined for all samples by using dielectric spectroscopy (DS) method. On the other hand, scanning electron microscopy (FESEM) and energy-dispersive spectroscopy (EDS) analysis were performed to evaluate microstructure, X-ray diffraction (XRD) was used to define chemical composition and atomic-force microscopy (AFM) analysis was carried out to characterise the topology of the coating layers. The thickness/surface roughness was obtained as ∼82.5 nm/10.6 nm for undoped and ̴ 99.5 nm/10.4 nm for nitride-doped samples, respectively. The maximum capacitance value (C) was obtained as 275 pF at −3.0V and 200 Hz, and the optimal conductance (G) value was also found as 45 μS around 4.0V and 1 MHz in the nitride-doped sample. The average of α and τ values was calculated as 5.67 × 10⁻⁵ s, 0.146 and 4.49 × 10⁻⁵ s, 0.081 for nitride-doped and undoped ZnO, respectively. The increase in performance can be attributed to the homogeneous and almost equally-size distribution of the ZnO grain growth which is strongly controlled by α-Si₃N_4.

研究重点是掺杂α-Si3N4对氧化锌薄膜电学/介电性能的影响。为此，研究人员采用喷雾沉积法在对硅衬底上镀上了掺杂了 α-Si3N4 和无添加剂的氧化锌薄膜。所有样品的电性能（电流密度（J）-电压（V））和介电性能（电容（C）、电导（G）、介电损耗（tanδ）、介电常数的卷积/虚部（ε′和ε″）以及电模量（M′和M″））都是通过介电光谱法（DS）测定的。另一方面，扫描电子显微镜（FESEM）和能量色散光谱（EDS）分析用于评估微观结构，X 射线衍射（XRD）用于确定化学成分，原子力显微镜（AFM）分析用于表征涂层层的拓扑结构。未掺杂样品的厚度/表面粗糙度分别为 ∼82.5 nm/10.6 nm，掺氮化物样品的厚度/表面粗糙度分别为 ̴ 99.5 nm/10.4 nm。掺氮样品在 -3.0V 和 200 Hz 时的最大电容值 (C) 为 275 pF，在 4.0V 和 1 MHz 时的最佳电导 (G) 值为 45 μS。经计算，掺氮和未掺氮氧化物的 α 和 τ 值平均值分别为 5.67 × 10-5 s, 0.146 和 4.49 × 10-5 s, 0.081。性能的提高可归因于 ZnO 晶粒生长的均匀性和几乎相同大小的分布，而这在α-Si3N4 的强烈控制下得以实现。

{"title":"The dielectric characteristics of spray deposited α-Si3N4:ZnO thin films: The nitride effect on frequency-dependent capacitance and conductance profiles","authors":"Erhan İbrahimoğlu , Ahmet Demir , Fatih Çalışkan , Zafer Tatlı","doi":"10.1016/j.solidstatesciences.2024.107754","DOIUrl":"10.1016/j.solidstatesciences.2024.107754","url":null,"abstract":"<div><div>The study focused on the effect of α-Si3N4 doping on the electrical/dielectric properties of ZnO thin films. Both α-Si3N4 doped and additive-free ZnO thin films were coated on p-Si substrates via a spray deposition method to achieve this. The electrical (current density (J)-voltage (V)) and dielectric properties (capacitance (C), conductance (G), dielectric loss (tanδ), reel/imaginary part of dielectric permittivity (ε′ and ε″) and electric modulus (M′ and M″)) were determined for all samples by using dielectric spectroscopy (DS) method. On the other hand, scanning electron microscopy (FESEM) and energy-dispersive spectroscopy (EDS) analysis were performed to evaluate microstructure, X-ray diffraction (XRD) was used to define chemical composition and atomic-force microscopy (AFM) analysis was carried out to characterise the topology of the coating layers. The thickness/surface roughness was obtained as ∼82.5 nm/10.6 nm for undoped and ̴ 99.5 nm/10.4 nm for nitride-doped samples, respectively. The maximum capacitance value (C) was obtained as 275 pF at −3.0V and 200 Hz, and the optimal conductance (G) value was also found as 45 μS around 4.0V and 1 MHz in the nitride-doped sample. The average of α and τ values was calculated as 5.67 × 10−5 s, 0.146 and 4.49 × 10−5 s, 0.081 for nitride-doped and undoped ZnO, respectively. The increase in performance can be attributed to the homogeneous and almost equally-size distribution of the ZnO grain growth which is strongly controlled by α-Si3N4.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107754"},"PeriodicalIF":3.4,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142662286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New quaternary R2CoAl4Si2 compounds 新型 R2CoAl4Si2 季化合物

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-06 DOI: 10.1016/j.solidstatesciences.2024.107749

Svitlana Pukas, Kateryna Kravets, Pavlo Demchenko, Nataliya Semuso, Roman Gladyshevskii

Eight new R₂CoAl₄Si₂ silicides (R = Y, Gd-Yb) were synthesized by arc melting, and their crystal structures were studied by X-ray powder diffraction. The compounds were found to adopt the same tetragonal structure type Tb₂NiAl₄Ge₂ (Pearson symbol tI18, space group I4/mmm) and the cell parameters refined to: a = 4.09319 (6), c = 19.3431 (4) Å (R = Y), a = 4.1109 (3), c = 19.425 (2) Å (R = Gd), a = 4.09788 (8), c = 19.3616 (5) Å (R = Tb), a = 4.0850 (1), c = 19.2967 (8) Å (R = Dy), a = 4.07802 (2), c = 19.2575 (2) Å (R = Ho), a = 4.06871 (8), c = 19.2082 (5) Å (R = Er), a = 4.05836 (4), c = 19.1599 (4) Å (R = Tm), and a = 4.06627 (6), c = 4.06627 (6) Å (R = Yb). Isotypic compounds with R = Sm, Lu were not observed under the experimental conditions.

The structure type Tb₂NiAl₄Ge₂ is a quaternary variant of the prototype Yb₃S₂F₄ ≡ (NiGe₂)Tb₂Al₄. The structure of the R₂CoAl₄Si₂ compounds can be described as a packing of monocapped square antiprisms [SiAl₄R₅] and cubes [CoAl₈]. It can also be considered as formed by two types of layer containing cubes, stacked along the crystallographic direction [001]. One kind of layer is built of cubes of composition Al₈, with every second cube centered by a Co atom, while the other kind of layer consists of slightly deformed empty cubes of composition R₄Si₄.

通过电弧熔融法合成了八种新的 R2CoAl4Si2 硅化物（R = Y，Gd-Yb），并利用 X 射线粉末衍射法研究了它们的晶体结构。发现这些化合物采用相同的四方结构类型 Tb2NiAl4Ge2（皮尔逊符号 tI18，空间群 I4/mmm），晶胞参数细化为：a = 4.09319 (6)，c = 19.3431 (4) Å (R = Y)；a = 4.1109 (3)，c = 19.425 (2) Å (R = Gd)；a = 4.09788 (8)，c = 19.3616 (5) Å (R = Tb)，a = 4.0850 (1)，c = 19.2967 (8) Å (R = Dy)，a = 4.07802 (2)，c = 19.2575 (2) Å (R = Ho)，a = 4.06871 (8)，c = 19.2082 (5) Å (R = Er)，a = 4.05836 (4)，c = 19.1599 (4) Å (R = Tm)，以及 a = 4.06627 (6)，c = 4.06627 (6) Å (R = Yb)。Tb2NiAl4Ge2 结构类型是 Yb3S2F4 ≡ (NiGe2)Tb2Al4 原型的四元变体。R2CoAl4Si2 化合物的结构可以描述为单帽方形反棱柱[SiAl4R5]和立方体[CoAl8]的堆积。也可以认为它是由两种含有立方体的层沿晶体学方向堆叠而成[001]。一种晶层由成分为 Al8 的立方体构成，每第二个立方体都以一个 Co 原子为中心，而另一种晶层则由成分为 R4Si4 的轻微变形空立方体构成。

{"title":"New quaternary R2CoAl4Si2 compounds","authors":"Svitlana Pukas, Kateryna Kravets, Pavlo Demchenko, Nataliya Semuso, Roman Gladyshevskii","doi":"10.1016/j.solidstatesciences.2024.107749","DOIUrl":"10.1016/j.solidstatesciences.2024.107749","url":null,"abstract":"<div><div>Eight new R2CoAl4Si2 silicides (R = Y, Gd-Yb) were synthesized by arc melting, and their crystal structures were studied by X-ray powder diffraction. The compounds were found to adopt the same tetragonal structure type Tb2NiAl4Ge2 (Pearson symbol tI18, space group I4/mmm) and the cell parameters refined to: a = 4.09319 (6), c = 19.3431 (4) Å (R = Y), a = 4.1109 (3), c = 19.425 (2) Å (R = Gd), a = 4.09788 (8), c = 19.3616 (5) Å (R = Tb), a = 4.0850 (1), c = 19.2967 (8) Å (R = Dy), a = 4.07802 (2), c = 19.2575 (2) Å (R = Ho), a = 4.06871 (8), c = 19.2082 (5) Å (R = Er), a = 4.05836 (4), c = 19.1599 (4) Å (R = Tm), and a = 4.06627 (6), c = 4.06627 (6) Å (R = Yb). Isotypic compounds with R = Sm, Lu were not observed under the experimental conditions.</div><div>The structure type Tb2NiAl4Ge2 is a quaternary variant of the prototype Yb3S2F4 ≡ (NiGe2)Tb2Al4. The structure of the R2CoAl4Si2 compounds can be described as a packing of monocapped square antiprisms [SiAl4R5] and cubes [CoAl8]. It can also be considered as formed by two types of layer containing cubes, stacked along the crystallographic direction [001]. One kind of layer is built of cubes of composition Al8, with every second cube centered by a Co atom, while the other kind of layer consists of slightly deformed empty cubes of composition R4Si4.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107749"},"PeriodicalIF":3.4,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142662227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of substrate dependent microstructural properties of sputtered Mo/CZTS heterojunctions using X ray diffraction 利用 X 射线衍射研究溅射钼/CZTS 异质结的基底相关微结构特性

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-06 DOI: 10.1016/j.solidstatesciences.2024.107739

Kalyan B. Chavan , Sachin V. Desarada , Shweta Chaure , Nandu B. Chaure

Thin films of CZTS (Cu₂ZnSnS₄) were deposited using radiofrequency sputtering (RF) at varying sputtering powers on soda lime glass coated with molybdenum (Mo). Direct current (DC) sputtering was used to deposit Mo thin films at various sputtering powers. Rapid thermal processing (RTP) was employed to anneal the thin films that had been deposited at temperatures of 300, 400, and 500 °C. X ray diffraction (XRD) technique was used to probe thin films structurally. The microstructural characteristics, such as crystallite size and microstrain, were calculated. These properties, particularly crystallite size and microstrain, are critical in future applications as an absorber layer in a thin film solar cell. A comprehensive comparative study has been carried out using Scherrer method, Williamson-Hall method, Halder-Wagner method, Size-Strain plot method, and Wagner-Aqua method. Crystallite size and microstrain obtained in this work shows strong dependence on preferential orientation of DC sputtered Mo base layer. Crystallite size, microstrain measured shows similar trends. Microstrain obtained exhibits systematic relationship with variation in deposition parameters of DC sputtered Mo thin films and RF sputtered CZTS thin films. This dependency of CZTS microstructural features on base layer Mo growth conditions can be used in the future to apply CZTS as a solar cell absorber layer.

在涂有钼（Mo）的钠钙玻璃上使用射频溅射（RF）技术以不同的溅射功率沉积了 CZTS（Cu2ZnSnS4）薄膜。在不同的溅射功率下，采用直流溅射沉积钼薄膜。在 300、400 和 500 °C 的温度下，采用快速热处理 (RTP) 对沉积的薄膜进行退火。X 射线衍射 (XRD) 技术用于从结构上探测薄膜。计算了结晶尺寸和微应变等微观结构特征。这些特性，尤其是晶粒尺寸和微应变，对于未来作为薄膜太阳能电池吸收层的应用至关重要。我们使用舍勒法、威廉森-霍尔法、哈尔德-瓦格纳法、尺寸-应变图法和瓦格纳-水法进行了全面的比较研究。这项研究获得的晶体尺寸和微应变与直流溅射钼基底层的优先取向有很大关系。所测得的晶体尺寸和微应变显示出相似的趋势。获得的微应变与直流溅射钼薄膜和射频溅射 CZTS 薄膜沉积参数的变化呈现出系统关系。CZTS 的微观结构特征与基底层钼生长条件的这种依赖关系可用于将来将 CZTS 用作太阳能电池吸收层。

{"title":"Study of substrate dependent microstructural properties of sputtered Mo/CZTS heterojunctions using X ray diffraction","authors":"Kalyan B. Chavan , Sachin V. Desarada , Shweta Chaure , Nandu B. Chaure","doi":"10.1016/j.solidstatesciences.2024.107739","DOIUrl":"10.1016/j.solidstatesciences.2024.107739","url":null,"abstract":"<div><div>Thin films of CZTS (Cu2ZnSnS4) were deposited using radiofrequency sputtering (RF) at varying sputtering powers on soda lime glass coated with molybdenum (Mo). Direct current (DC) sputtering was used to deposit Mo thin films at various sputtering powers. Rapid thermal processing (RTP) was employed to anneal the thin films that had been deposited at temperatures of 300, 400, and 500 °C. X ray diffraction (XRD) technique was used to probe thin films structurally. The microstructural characteristics, such as crystallite size and microstrain, were calculated. These properties, particularly crystallite size and microstrain, are critical in future applications as an absorber layer in a thin film solar cell. A comprehensive comparative study has been carried out using Scherrer method, Williamson-Hall method, Halder-Wagner method, Size-Strain plot method, and Wagner-Aqua method. Crystallite size and microstrain obtained in this work shows strong dependence on preferential orientation of DC sputtered Mo base layer. Crystallite size, microstrain measured shows similar trends. Microstrain obtained exhibits systematic relationship with variation in deposition parameters of DC sputtered Mo thin films and RF sputtered CZTS thin films. This dependency of CZTS microstructural features on base layer Mo growth conditions can be used in the future to apply CZTS as a solar cell absorber layer.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107739"},"PeriodicalIF":3.4,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A DFT exploration of the stabilities, physical properties, and tensile strength of new synthesized Nb2AC (A=Ni and Co) MAX phases 对新合成的 Nb2AC（A=镍和钴）MAX 相的稳定性、物理性质和拉伸强度的 DFT 探索

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-05 DOI: 10.1016/j.solidstatesciences.2024.107733

Mourad Rougab, Ahmed Gueddouh

Based on first-principles calculations, this study explored the structural stability, elastic anisotropy, tensile strength, and the mechanical, electronic, and thermodynamic properties of the newly synthesized MAX phases Nb₂NiC and Nb₂CoC. It has been found that these compounds are thermodynamically and mechanically stable, exhibit metallic conductivity, and possess ductile nature. The ultimate tensile strengths of Nb₂NiC and Nb₂CoC depend on their crystallographic directions, specifically [0001] and [112̄0]. In the [0001] direction, Nb₂CoC has a tensile strength of about 36.63 GPa at a strain of 26%, compared to Nb₂NiC, which has a tensile strength of 31.70 GPa at a strain of 24%. In the [112̄0] direction, Nb₂CoC exhibits a tensile strength of around 23.29 GPa at a strain of 12%, while Nb₂NiC has a tensile strength of approximately 18.51 GPa at an strain of 8%. Both Nb₂CoC and Nb₂NiC demonstrate significant elastic deformation before reaching their ultimate tensile strengths, indicating good ductility. It is noteworthy that Nb₂NiC is less elastic than Nb₂CoC in both the [0001] and [112̄0] directions, as the elastic constants of Nb₂CoC are comparatively higher than those of Nb₂NiC. Furthermore, the estimated thermal parameters show that these compounds exhibit a relatively low Debye temperature, a high melting point, low minimum thermal conductivity, and thermal expansion coefficient values that are similar to those of well-established thermal barrier coating (TBC) materials such as Al

_{2}

O

_{3}

, LaPO

_{4}

, and TiO

_{2}

. Consequently, the newly synthesized MAX phases Nb₂NiC and Nb₂CoC are promising candidates for TBC applications.

本研究基于第一原理计算，探讨了新合成的 MAX 相 Nb2NiC 和 Nb2CoC 的结构稳定性、弹性各向异性、拉伸强度以及机械、电子和热力学性质。研究发现，这些化合物具有热力学和机械稳定性、金属导电性和韧性。Nb2NiC 和 Nb2CoC 的极限拉伸强度取决于其晶体学方向，特别是 [0001] 和 [112̄0]。在[0001]方向，Nb2CoC 在应变为 26% 时的抗拉强度约为 36.63 GPa，而 Nb2NiC 在应变为 24% 时的抗拉强度为 31.70 GPa。在[112̄0]方向，Nb2CoC 在应变为 12% 时的抗拉强度约为 23.29 GPa，而 Nb2NiC 在应变为 8% 时的抗拉强度约为 18.51 GPa。在达到极限抗拉强度之前，Nb2CoC 和 Nb2NiC 都表现出明显的弹性变形，这表明它们具有良好的延展性。值得注意的是，在[0001]和[112̄0]两个方向上，Nb2NiC 的弹性都小于 Nb2CoC，因为 Nb2CoC 的弹性常数相对高于 Nb2NiC。此外，估算的热参数显示，这些化合物具有相对较低的德拜温度、较高的熔点、较低的最小热导率，以及与 Al2O3、LaPO4 和 TiO2 等成熟的热障涂层 (TBC) 材料相似的热膨胀系数值。因此，新合成的 MAX 相 Nb2NiC 和 Nb2CoC 有希望成为 TBC 应用的候选材料。

{"title":"A DFT exploration of the stabilities, physical properties, and tensile strength of new synthesized Nb2AC (A=Ni and Co) MAX phases","authors":"Mourad Rougab, Ahmed Gueddouh","doi":"10.1016/j.solidstatesciences.2024.107733","DOIUrl":"10.1016/j.solidstatesciences.2024.107733","url":null,"abstract":"<div><div>Based on first-principles calculations, this study explored the structural stability, elastic anisotropy, tensile strength, and the mechanical, electronic, and thermodynamic properties of the newly synthesized MAX phases Nb2NiC and Nb2CoC. It has been found that these compounds are thermodynamically and mechanically stable, exhibit metallic conductivity, and possess ductile nature. The ultimate tensile strengths of Nb2NiC and Nb2CoC depend on their crystallographic directions, specifically [0001] and [112̄0]. In the [0001] direction, Nb2CoC has a tensile strength of about 36.63 GPa at a strain of 26%, compared to Nb2NiC, which has a tensile strength of 31.70 GPa at a strain of 24%. In the [112̄0] direction, Nb2CoC exhibits a tensile strength of around 23.29 GPa at a strain of 12%, while Nb2NiC has a tensile strength of approximately 18.51 GPa at an strain of 8%. Both Nb2CoC and Nb2NiC demonstrate significant elastic deformation before reaching their ultimate tensile strengths, indicating good ductility. It is noteworthy that Nb2NiC is less elastic than Nb2CoC in both the [0001] and [112̄0] directions, as the elastic constants of Nb2CoC are comparatively higher than those of Nb2NiC. Furthermore, the estimated thermal parameters show that these compounds exhibit a relatively low Debye temperature, a high melting point, low minimum thermal conductivity, and thermal expansion coefficient values that are similar to those of well-established thermal barrier coating (TBC) materials such as Al<math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math>O<math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math>, LaPO<math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math>, and TiO<math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math>. Consequently, the newly synthesized MAX phases Nb2NiC and Nb2CoC are promising candidates for TBC applications.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107733"},"PeriodicalIF":3.4,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142662285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

ZnO/Zn3(PO4)2/CeO2 photocatalysts formed on zinc by plasma electrolytic oxidation 等离子电解氧化法在锌上形成 ZnO/Zn3(PO4)2/CeO2 光催化剂

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-05 DOI: 10.1016/j.solidstatesciences.2024.107748

Stevan Stojadinović , Ziv Radisavljevic , Zoran Petrović , Nenad Radić

ZnO/Zn₃(PO₄)₂ coatings doped with CeO₂ particles for use in photocatalytic degradation of methyl orange (MO) were created by plasma electrolytic oxidation of zinc in a phosphate alkaline electrolyte (PAE) with CeO₂ particle concentrations of up to 1.5 g/L. The CeO₂ particle content in ZnO/Zn₃(PO₄)₂ coatings was determined by the concentration of CeO₂ particles in the PAE. Extensive research was conducted on coating morphology, chemical and phase compositions, and light-harvesting properties. The photocatalytic activity (PA) of ZnO/Zn₃(PO₄)₂/CeO₂ coatings was higher than ZnO/Zn₃(PO₄)₂. The PA of ZnO/Zn₃(PO₄)₂/CeO₂ coatings strongly depends on the amount of CeO₂ particles in PAE, and the highest PA was observed for ZnO/Zn₃(PO₄)₂/CeO₂ coating formed in PAE by adding 0.75 g/L of CeO₂ particles. The higher PA of ZnO/Zn₃(PO₄)₂/CeO₂ compared to ZnO/Zn₃(PO₄)₂ is due to a lower photogenerated electron/hole recombination. The photocatalytic degradation of MO followed a pseudo-first order kinetic model and the reaction constant of the most photoactive ZnO/Zn₃(PO₄)₂/CeO₂ coating was increased about twofold compared to the ZnO/Zn₃(PO₄)₂ coating. After 6 h of irradiation, the PA for ZnO/Zn₃(PO₄)₂ and the most photocatalytically active ZnO/Zn₃(PO₄)₂/CeO₂ was about 70 % and 98 %, respectively. A mechanism for the photodegradation of MO with the ZnO/Zn₃(PO₄)₂/CeO₂ photocatalyst was also proposed.

通过在磷酸盐碱性电解液（PAE）中对锌进行等离子电解氧化，在 CeO2 颗粒浓度高达 1.5 g/L 的情况下，制备出了掺杂有 CeO2 颗粒的 ZnO/Zn3(PO4)2 涂层，用于光催化降解甲基橙（MO）。ZnO/Zn3(PO4)2 涂层中的 CeO2 颗粒含量由 PAE 中 CeO2 颗粒的浓度决定。对涂层的形态、化学成分和相组成以及光收集特性进行了广泛的研究。ZnO/Zn3(PO4)2/CeO2 涂层的光催化活性（PA）高于 ZnO/Zn3(PO4)2。ZnO/Zn3(PO4)2/CeO2 涂层的 PA 与 PAE 中 CeO2 颗粒的含量密切相关，在 PAE 中加入 0.75 g/L 的 CeO2 颗粒形成的 ZnO/Zn3(PO4)2/CeO2 涂层的 PA 最高。与 ZnO/Zn3(PO4)2 相比，ZnO/Zn3(PO4)2/CeO2 的 PA 较高，这是因为光生电子/空穴重组较低。MO 的光催化降解遵循伪一阶动力学模型，与 ZnO/Zn3(PO4)2 涂层相比，光活性最强的 ZnO/Zn3(PO4)2/CeO2 涂层的反应常数增加了约两倍。辐照 6 小时后，ZnO/Zn3(PO4)2 和光催化活性最高的 ZnO/Zn3(PO4)2/CeO2 的 PA 分别为 70% 和 98%。此外，还提出了 ZnO/Zn3(PO4)2/CeO2 光催化剂光降解 MO 的机理。

{"title":"ZnO/Zn3(PO4)2/CeO2 photocatalysts formed on zinc by plasma electrolytic oxidation","authors":"Stevan Stojadinović , Ziv Radisavljevic , Zoran Petrović , Nenad Radić","doi":"10.1016/j.solidstatesciences.2024.107748","DOIUrl":"10.1016/j.solidstatesciences.2024.107748","url":null,"abstract":"<div><div>ZnO/Zn3(PO4)2 coatings doped with CeO2 particles for use in photocatalytic degradation of methyl orange (MO) were created by plasma electrolytic oxidation of zinc in a phosphate alkaline electrolyte (PAE) with CeO2 particle concentrations of up to 1.5 g/L. The CeO2 particle content in ZnO/Zn3(PO4)2 coatings was determined by the concentration of CeO2 particles in the PAE. Extensive research was conducted on coating morphology, chemical and phase compositions, and light-harvesting properties. The photocatalytic activity (PA) of ZnO/Zn3(PO4)2/CeO2 coatings was higher than ZnO/Zn3(PO4)2. The PA of ZnO/Zn3(PO4)2/CeO2 coatings strongly depends on the amount of CeO2 particles in PAE, and the highest PA was observed for ZnO/Zn3(PO4)2/CeO2 coating formed in PAE by adding 0.75 g/L of CeO2 particles. The higher PA of ZnO/Zn3(PO4)2/CeO2 compared to ZnO/Zn3(PO4)2 is due to a lower photogenerated electron/hole recombination. The photocatalytic degradation of MO followed a pseudo-first order kinetic model and the reaction constant of the most photoactive ZnO/Zn3(PO4)2/CeO2 coating was increased about twofold compared to the ZnO/Zn3(PO4)2 coating. After 6 h of irradiation, the PA for ZnO/Zn3(PO4)2 and the most photocatalytically active ZnO/Zn3(PO4)2/CeO2 was about 70 % and 98 %, respectively. A mechanism for the photodegradation of MO with the ZnO/Zn3(PO4)2/CeO2 photocatalyst was also proposed.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107748"},"PeriodicalIF":3.4,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis and characterization of Sr2Cu3O4I2 Sr2Cu3O4I2 的合成与表征

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-05 DOI: 10.1016/j.solidstatesciences.2024.107750

Danrui Ni , Xianghan Xu , Chen Yang , Robert J. Cava

Polycrystalline Sr₂Cu₃O₄I₂ powder was synthesized. Its crystal structure is based on Cu₃O₄ planes, which a previous structural study indicates consist of two kinds of copper. Its metastability on heating is uncovered. The magnetization and heat capacity of the material are characterized, and it undergoes several magnetic ordering transitions in an easily accessible temperature range. A band-gap-like absorption is observed in the IR region.

合成了多晶 Sr2Cu3O4I2 粉末。它的晶体结构以 Cu3O4 平面为基础，先前的结构研究表明它由两种铜组成。研究揭示了其在加热时的蜕变性。该材料的磁化和热容量得到了表征，并在容易获得的温度范围内发生了几次磁有序转变。在红外区域观察到类似带隙的吸收。

引用次数: 0

Synthesis of Nd2Sn2O7 pyrochlore with different lattice disorder degrees and oxygen vacancy contents 不同晶格无序度和氧空位含量的 Nd2Sn2O7 烧绿宝石的合成

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-04 DOI: 10.1016/j.solidstatesciences.2024.107740

Liang Guo , Junwei Xu , Rumeng Ouyang , Jieqi Zhou , Xiaomei Yu , Xiuzhong Fang , Chunhui Deng , Xiang Wang

In this study, a series of Nd₂Sn₂O₇ pyrochlores with different lattice disorder degrees and oxygen vacancy contents were prepared via simple methods, including the sol–gel (SG) technique, glycine–nitrate combustion (GNC), coprecipitation (CP), and the hydrothermal (HT) method. Raman spectroscopy proved the most effective in identifying the lattice disorder degree and lattice defects of the pyrochlore-type composite oxides, followed by XRD, with FTIR spectroscopy as the least sensitive technique. For pure phase Nd₂Sn₂O₇, the content of oxygen vacancies and adsorbed oxygen species follow the sequence CP > GNC > SG, which is well consistent with the lattice disorder degrees. This is because that the higher the lattice disorder of Nd₂Sn₂O₇ pyrochlore, the weaker the Sn-O bond, making it easier to break and form oxygen vacancies. Although the HT sample exhibits the lowest disorder degree, its synergistic effect with residual SnO₂ on the surface is beneficial for further enriching oxygen vacancies.

本研究通过溶胶-凝胶（SG）技术、硝酸甘油燃烧（GNC）、共沉淀（CP）和水热法（HT）等简单方法制备了一系列具有不同晶格无序度和氧空位含量的 Nd2Sn2O7 热长石。事实证明，拉曼光谱在确定热绿石型复合氧化物的晶格无序度和晶格缺陷方面最为有效，其次是 XRD，而傅立叶红外光谱则是灵敏度最低的技术。对于纯相 Nd2Sn2O7，氧空位和吸附氧的含量遵循 CP > GNC > SG 的序列，这与晶格无序度十分吻合。这是因为 Nd2Sn2O7 烧绿石的晶格无序度越高，Sn-O 键就越弱，更容易断裂并形成氧空位。虽然 HT 样品的无序度最低，但它与表面残留的 SnO2 的协同效应有利于进一步富集氧空位。

{"title":"Synthesis of Nd2Sn2O7 pyrochlore with different lattice disorder degrees and oxygen vacancy contents","authors":"Liang Guo , Junwei Xu , Rumeng Ouyang , Jieqi Zhou , Xiaomei Yu , Xiuzhong Fang , Chunhui Deng , Xiang Wang","doi":"10.1016/j.solidstatesciences.2024.107740","DOIUrl":"10.1016/j.solidstatesciences.2024.107740","url":null,"abstract":"<div><div>In this study, a series of Nd2Sn2O7 pyrochlores with different lattice disorder degrees and oxygen vacancy contents were prepared via simple methods, including the sol–gel (SG) technique, glycine–nitrate combustion (GNC), coprecipitation (CP), and the hydrothermal (HT) method. Raman spectroscopy proved the most effective in identifying the lattice disorder degree and lattice defects of the pyrochlore-type composite oxides, followed by XRD, with FTIR spectroscopy as the least sensitive technique. For pure phase Nd2Sn2O7, the content of oxygen vacancies and adsorbed oxygen species follow the sequence CP > GNC > SG, which is well consistent with the lattice disorder degrees. This is because that the higher the lattice disorder of Nd2Sn2O7 pyrochlore, the weaker the Sn-O bond, making it easier to break and form oxygen vacancies. Although the HT sample exhibits the lowest disorder degree, its synergistic effect with residual SnO2 on the surface is beneficial for further enriching oxygen vacancies.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107740"},"PeriodicalIF":3.4,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of crystalline phase structure of rare earth oxides on active oxygen and basic sites 稀土氧化物晶相结构对活性氧和碱性位点的影响

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-11-01 DOI: 10.1016/j.solidstatesciences.2024.107738

Jianping Fu , Xuefang Wen , Zhiyong Xu, Yongsheng Guo, Chunshan Ke, Junwei Xu

Herein, the effects of crystalline phase structures of rare earth oxides on active oxygen and basic sites were investigated. The fluorite structure shows the best lattice oxygen mobility and redox properties due to its open structure and weakest Ln-O bond strength. For Pr₆O₁₁ and Tb₄O₇, the presence of polyvalent cation states further enhances these properties. Based on the basicity and number of basic sites, the surfaces of A-type, B-type, and C-type lanthanide sesquioxides facilitate the generation of chemisorbed oxygen species in the following order: A-type > B-type > C-type. Furthermore, the basicity and amount of chemisorbed oxygen species are dependent on the electronegativity of rare earth elements, which decreases gradually from La to Lu. This is because from La₂O₃ to Lu₂O₃, electrons are less biased toward oxygen, the basicity of lattice oxygen decreases, and fewer electrons are produced for gaseous oxygen activation and chemisorbed oxygen generation.

本文研究了稀土氧化物晶相结构对活性氧和碱性位点的影响。萤石结构因其开放结构和最弱的 Ln-O 键强度而显示出最佳的晶格氧迁移率和氧化还原特性。对于 Pr6O11 和 Tb4O7，多价阳离子态的存在进一步增强了这些特性。根据碱性和碱性位点的数量，A 型、B 型和 C 型镧系倍半氧化物的表面按以下顺序促进化学吸附氧的生成：A型；B型；C型。此外，化学吸附氧的碱性和数量取决于稀土元素的电负性，从 La 到 Lu，电负性逐渐降低。这是因为从 La2O3 到 Lu2O3，电子对氧的偏向性降低，晶格氧的碱性降低，用于气态氧活化和化学吸附氧生成的电子减少。

{"title":"Influence of crystalline phase structure of rare earth oxides on active oxygen and basic sites","authors":"Jianping Fu , Xuefang Wen , Zhiyong Xu, Yongsheng Guo, Chunshan Ke, Junwei Xu","doi":"10.1016/j.solidstatesciences.2024.107738","DOIUrl":"10.1016/j.solidstatesciences.2024.107738","url":null,"abstract":"<div><div>Herein, the effects of crystalline phase structures of rare earth oxides on active oxygen and basic sites were investigated. The fluorite structure shows the best lattice oxygen mobility and redox properties due to its open structure and weakest Ln-O bond strength. For Pr6O11 and Tb4O7, the presence of polyvalent cation states further enhances these properties. Based on the basicity and number of basic sites, the surfaces of A-type, B-type, and C-type lanthanide sesquioxides facilitate the generation of chemisorbed oxygen species in the following order: A-type > B-type > C-type. Furthermore, the basicity and amount of chemisorbed oxygen species are dependent on the electronegativity of rare earth elements, which decreases gradually from La to Lu. This is because from La2O3 to Lu2O3, electrons are less biased toward oxygen, the basicity of lattice oxygen decreases, and fewer electrons are produced for gaseous oxygen activation and chemisorbed oxygen generation.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107738"},"PeriodicalIF":3.4,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Crystal structures of the R1.33Ni3Ga8 (R = Tb, Ho, Er, Tm, Lu) compounds R1.33Ni3Ga8 （R = Tb、Ho、Er、Tm、Lu）化合物的晶体结构

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-10-31 DOI: 10.1016/j.solidstatesciences.2024.107737

Nataliya Muts, Yaroslav Tokaychuk, Roman Gladyshevskii

The existence of five new ternary compounds with Gd_1.33Pt₃Al₈-type structure (Pearson symbol hR51, space group R-3m) was established by means of X-ray powder diffraction and energy-dispersive X-ray spectroscopy: Tb_1.33Ni₃Ga₈ (а = 4.2056(1), с = 37.8913(9) Å), Ho_1.33Ni₃Ga₈ (а = 4.19666(9), с = 37.7882(9) Å), Er_1.33Ni₃Ga₈ (a = 4.19290(8), c = 37.7446(8) Å), Tm_1.33Ni₃Ga₈ (a = 4.18819(7), c = 37.6980(7) Å), and Lu_1.33Ni₃Ga₈ (a = 4.1826(1), c = 37.647(1) Å). The structures of the ternary R_1.33Ni₃Ga₈ compounds belong to a family of linear-intergrowth structures with the general formula R_0.67T_nM_{2n + m} and are built from atom layers of the composition R_0.67Ga (R_0.67M), separated by single or double NiGa₂ slabs (TM₂). The layers containing the rare-earth metal atoms are characterized by a disordered distribution of rare-earth metal atoms and Ga-atom triangles.

通过 X 射线粉末衍射和能量色散 X 射线光谱，确定了五种具有 Gd1.33Pt3Al8 型结构（皮尔逊符号 hR51，空间群 R-3m）的新三元化合物的存在：Tb1.33Ni3Ga8（а = 4.2056(1)，с = 37.8913(9)埃），Ho1.33Ni3Ga8（а = 4.19666(9)，с = 37.7882(9)埃），Er1.33Ni3Ga8（a = 4.19290(8), c = 37.7446(8) Å)、Tm1.33Ni3Ga8 (a = 4.18819(7), c = 37.6980(7) Å)和 Lu1.33Ni3Ga8 (a = 4.1826(1), c = 37.647(1) Å)。R1.33Ni3Ga8 三元化合物的结构属于线性互生结构系列，通式为 R0.67TnM2n + m，由 R0.67Ga (R0.67M)原子层构成，原子层之间由单层或双层 NiGa2 板（TM2）隔开。含有稀土金属原子的原子层的特点是稀土金属原子和镓原子三角形的无序分布。

{"title":"Crystal structures of the R1.33Ni3Ga8 (R = Tb, Ho, Er, Tm, Lu) compounds","authors":"Nataliya Muts, Yaroslav Tokaychuk, Roman Gladyshevskii","doi":"10.1016/j.solidstatesciences.2024.107737","DOIUrl":"10.1016/j.solidstatesciences.2024.107737","url":null,"abstract":"<div><div>The existence of five new ternary compounds with Gd1.33Pt3Al8-type structure (Pearson symbol hR51, space group R-3m) was established by means of X-ray powder diffraction and energy-dispersive X-ray spectroscopy: Tb1.33Ni3Ga8 (а = 4.2056(1), с = 37.8913(9) Å), Ho1.33Ni3Ga8 (а = 4.19666(9), с = 37.7882(9) Å), Er1.33Ni3Ga8 (a = 4.19290(8), c = 37.7446(8) Å), Tm1.33Ni3Ga8 (a = 4.18819(7), c = 37.6980(7) Å), and Lu1.33Ni3Ga8 (a = 4.1826(1), c = 37.647(1) Å). The structures of the ternary R1.33Ni3Ga8 compounds belong to a family of linear-intergrowth structures with the general formula R0.67TnM2n + m and are built from atom layers of the composition R0.67Ga (R0.67M), separated by single or double NiGa2 slabs (TM2). The layers containing the rare-earth metal atoms are characterized by a disordered distribution of rare-earth metal atoms and Ga-atom triangles.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107737"},"PeriodicalIF":3.4,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Syntheses and some properties of solid solution Yb(Al,T)B4 (T = Mo or W) compounds 固溶体 Yb（Al，T）B4（T = Mo 或 W）化合物的合成及其某些特性

IF 3.4 3区化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR

Solid State Sciences

Pub Date : 2024-10-30 DOI: 10.1016/j.solidstatesciences.2024.107735

Kaoru Kouzu , Shigeru Okada , Takeshi Hagiwara , Akiko Nomura , Kunio Yubuta , Takao Mori , Toetsu Shishido , Akira Yoshikawa

RAlB₄ (R = rare earth element) has attracted increasing attention due to recent reports on its properties in magnetic, thermoelectric and superconducting materials. The authors developed and we investigated the formation of the solid solution Yb(Al_0.995T_0.005)B₄ (T = Cr, Mn or Fe) compounds in which the Al position of YbAlB₄ is substituted with T atoms using the Al flux method. In this study, crystals of the boride Yb(Al_0.995T_0.005)B₄ (T = Mo or W) were grown by using Al flux mixed with T metal at 1773 K for 5h. Yb(Al_0.995W_0.005)B₄ was obtained as the single phase, however, in the case of Yb(Al_0.995Mo_0.005)B₄, a small amount of AlMoB crystals was contained. The crystals were measured using a micro-Vickers hardness tester, and the oxidation resistance was examined in air using DTA-TG apparatus. Comparing the lattice constants and chemical composition of YbAlB₄ and Yb(Al_0.995T_0.005)B₄, it were understood that the lattice constant of Yb(Al,T)B₄ were larger than that of YbAlB₄ crystals. Yb(Al,T)B₄ were grown as a solid solution contained about 40 % of each T metal. The hardness values were 11.0(±0.7) GPa for Yb(Al_0.995Mo_0.005)B₄ and 15.7(±1.9) GPa for Yb(Al_0.995W_0.005)B₄. The oxidation of Yb(Al,T)B₄ starts in the range of 971–987 K. The oxidation onset temperature during the heating of Yb(Al,T)B₄ is about 100 K higher than YbAlB₄.

由于最近有关 RAlB4（R = 稀土元素）在磁性、热电和超导材料中特性的报道，它引起了越来越多的关注。作者开发并研究了固溶体 Yb(Al0.995T0.005)B4（T = Cr、Mn 或 Fe）化合物的形成，其中 YbAlB4 的 Al 位置使用 Al flux 方法被 T 原子取代。在这项研究中，通过在 1773 K 下使用混合有 T 金属的铝助熔剂 5 小时，生长出了硼化物 Yb(Al0.995T0.005)B4 （T = Mo 或 W）的晶体。得到的 Yb(Al0.995W0.005)B4 为单相，但在 Yb(Al0.995Mo0.005)B4 中，含有少量 AlMoB 晶体。使用显微维氏硬度计测量了晶体的硬度，并使用 DTA-TG 仪器检测了晶体在空气中的抗氧化性。通过比较 YbAlB4 和 Yb（Al0.995T0.005）B4 的晶格常数和化学成分可知，Yb（Al,T）B4 的晶格常数大于 YbAlB4 晶体的晶格常数。Yb(Al,T)B4以固溶体的形式生长，每种 T 金属的含量约为 40%。Yb(Al0.995Mo0.005)B4 的硬度值为 11.0(±0.7) GPa，Yb(Al0.995W0.005)B4 的硬度值为 15.7(±1.9) GPa。Yb(Al,T)B4 的氧化开始于 971-987 K 之间。

{"title":"Syntheses and some properties of solid solution Yb(Al,T)B4 (T = Mo or W) compounds","authors":"Kaoru Kouzu , Shigeru Okada , Takeshi Hagiwara , Akiko Nomura , Kunio Yubuta , Takao Mori , Toetsu Shishido , Akira Yoshikawa","doi":"10.1016/j.solidstatesciences.2024.107735","DOIUrl":"10.1016/j.solidstatesciences.2024.107735","url":null,"abstract":"<div><div>RAlB4 (R = rare earth element) has attracted increasing attention due to recent reports on its properties in magnetic, thermoelectric and superconducting materials. The authors developed and we investigated the formation of the solid solution Yb(Al0.995T0.005)B4 (T = Cr, Mn or Fe) compounds in which the Al position of YbAlB4 is substituted with T atoms using the Al flux method. In this study, crystals of the boride Yb(Al0.995T0.005)B4 (T = Mo or W) were grown by using Al flux mixed with T metal at 1773 K for 5h. Yb(Al0.995W0.005)B4 was obtained as the single phase, however, in the case of Yb(Al0.995Mo0.005)B4, a small amount of AlMoB crystals was contained. The crystals were measured using a micro-Vickers hardness tester, and the oxidation resistance was examined in air using DTA-TG apparatus. Comparing the lattice constants and chemical composition of YbAlB4 and Yb(Al0.995T0.005)B4, it were understood that the lattice constant of Yb(Al,T)B4 were larger than that of YbAlB4 crystals. Yb(Al,T)B4 were grown as a solid solution contained about 40 % of each T metal. The hardness values were 11.0(±0.7) GPa for Yb(Al0.995Mo0.005)B4 and 15.7(±1.9) GPa for Yb(Al0.995W0.005)B4. The oxidation of Yb(Al,T)B4 starts in the range of 971–987 K. The oxidation onset temperature during the heating of Yb(Al,T)B4 is about 100 K higher than YbAlB4.</div></div>","PeriodicalId":432,"journal":{"name":"Solid State Sciences","volume":"158 ","pages":"Article 107735"},"PeriodicalIF":3.4,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142662228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0