Pub Date : 2007-10-01DOI: 10.1109/EMICC.2007.4412654
B. Heydari, P. Reynaert, E. Adabi, M. Bohsali, B. Afshar, M. A. Arbabian, A. Niknejad
The design of a 60 GHz cascode amplifier in a 90 nm technology is described. The amplifier uses an interstage matching to increase the gain and to provide a better power match between the common-source and the common-gate transistor of the cascode device. Both the common-source and the common-gate transistor make use of an optimized round-table layout, which minimizes all terminal resistances and thus improves the mm-wave performance of the nMOS transistors. A record fmax of 300 GHz is achieved for a 40 mum round-table nMOS in 90 nm CMOS. The cascode amplifier achieves a gain of 7.5 dB at 60 GHz with a DC power consumption of only 6.7 mW. When compared to a shared-junction cascode amplifier or a two-stage common-source cascade amplifier, the presented cascode amplifier is favorable in terms of power gain and DC power consumption
{"title":"A 60-GHz 90-nm CMOS cascode amplifier with interstage matching","authors":"B. Heydari, P. Reynaert, E. Adabi, M. Bohsali, B. Afshar, M. A. Arbabian, A. Niknejad","doi":"10.1109/EMICC.2007.4412654","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412654","url":null,"abstract":"The design of a 60 GHz cascode amplifier in a 90 nm technology is described. The amplifier uses an interstage matching to increase the gain and to provide a better power match between the common-source and the common-gate transistor of the cascode device. Both the common-source and the common-gate transistor make use of an optimized round-table layout, which minimizes all terminal resistances and thus improves the mm-wave performance of the nMOS transistors. A record fmax of 300 GHz is achieved for a 40 mum round-table nMOS in 90 nm CMOS. The cascode amplifier achieves a gain of 7.5 dB at 60 GHz with a DC power consumption of only 6.7 mW. When compared to a shared-junction cascode amplifier or a two-stage common-source cascade amplifier, the presented cascode amplifier is favorable in terms of power gain and DC power consumption","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128751875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/eumc.2007.4405408
M. Gourary, S. Rusakov, S. Ulyanov, M. Zharov, B. Mulvaney, K. Gullapalli
A new numerical technique for cyclostationary noise analysis of oscillators is proposed. This technique is based on the transformation of the frequency conversion linear system for periodic small signal analysis. This transformation provides nonsingular matrix with zero frequency offset that allows to avoid numerical errors at small frequency offset values. The numerical examples are given to demonstrate the efficiency of the new approach.
{"title":"New numerical technique for cyclostationary noise analysis of oscillators","authors":"M. Gourary, S. Rusakov, S. Ulyanov, M. Zharov, B. Mulvaney, K. Gullapalli","doi":"10.1109/eumc.2007.4405408","DOIUrl":"https://doi.org/10.1109/eumc.2007.4405408","url":null,"abstract":"A new numerical technique for cyclostationary noise analysis of oscillators is proposed. This technique is based on the transformation of the frequency conversion linear system for periodic small signal analysis. This transformation provides nonsingular matrix with zero frequency offset that allows to avoid numerical errors at small frequency offset values. The numerical examples are given to demonstrate the efficiency of the new approach.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124693477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/eumc.2007.4405458
G. Greving, W. Biermann
System simulations require the systematic scattering analysis of the distorting objects. An adequate efficient 3D-modeling of an A380 and subsequent scattering analysis and numerical system simulations are discussed for different model approximations. The modeling ranges from simple rectangular plates up to the most accurate 3D-model which includes the 3D voluminous tailfin. It has been shown that the simple models for the A380 fail for the grazing angle incidence even if the best available numerical methods are used. These models do not describe the physical features of the aircraft or the tail fin correctly. By that the modeling and the applied numerical methods is a critical issue in approximate models for complex objects in the possible and relevant geometrical scenarios.
{"title":"Theoretical aspects and numerical solution of scattering from objects under grazing angle incidence - the A380 and the aircraft tailfin","authors":"G. Greving, W. Biermann","doi":"10.1109/eumc.2007.4405458","DOIUrl":"https://doi.org/10.1109/eumc.2007.4405458","url":null,"abstract":"System simulations require the systematic scattering analysis of the distorting objects. An adequate efficient 3D-modeling of an A380 and subsequent scattering analysis and numerical system simulations are discussed for different model approximations. The modeling ranges from simple rectangular plates up to the most accurate 3D-model which includes the 3D voluminous tailfin. It has been shown that the simple models for the A380 fail for the grazing angle incidence even if the best available numerical methods are used. These models do not describe the physical features of the aircraft or the tail fin correctly. By that the modeling and the applied numerical methods is a critical issue in approximate models for complex objects in the possible and relevant geometrical scenarios.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"210 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131932984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/eumc.2007.4405440
Young Chul Lee, Y. Hong, K. Ko
In this work, we present tunable inter-digital capacitors (IDC's) employing high tunable PbO-ZnO-Nb2O5 (PZN) cubic pyrochlore thin film dielectrics for low-voltage and high-tunability microwave applications. In order to reduce the bias voltage of the IDC and increase its tunability, its electrodes were fully embedded into the thin film dielectrics to confine fringing electric fields within them. In 4 V, the tunability of the IDCs was analyzed in terms of the electrode width and spacing by measuring reflection coefficients at 1 GHz. The fabricated IDC with width and spacing of 1.5 and 1.8 mum, respectively, achieved tunability of 26 % and Q-factor of 10 at the applied DC voltage of 5.5 V.
{"title":"Low-voltage and high-tunability inter-digital capacitors using lead zinc niobate (PbO-ZnO-Nb2O5) thin films","authors":"Young Chul Lee, Y. Hong, K. Ko","doi":"10.1109/eumc.2007.4405440","DOIUrl":"https://doi.org/10.1109/eumc.2007.4405440","url":null,"abstract":"In this work, we present tunable inter-digital capacitors (IDC's) employing high tunable PbO-ZnO-Nb2O5 (PZN) cubic pyrochlore thin film dielectrics for low-voltage and high-tunability microwave applications. In order to reduce the bias voltage of the IDC and increase its tunability, its electrodes were fully embedded into the thin film dielectrics to confine fringing electric fields within them. In 4 V, the tunability of the IDCs was analyzed in terms of the electrode width and spacing by measuring reflection coefficients at 1 GHz. The fabricated IDC with width and spacing of 1.5 and 1.8 mum, respectively, achieved tunability of 26 % and Q-factor of 10 at the applied DC voltage of 5.5 V.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126315330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/emicc.2007.4412762
A. Deleniv, V. Drakinsky, P. Evans, R. Pollard, R. Bowman, S. Gevorgian
Magneto-dielectric nano-composite (magnetic nanowire in anodic alumina) films are fabricated on silicon substrate. Kerr measurements reveal magnetic properties of the nano-composite, while the microwave measurements in the frequency band 0.2-18 GHz show relatively low dielectric losses. After a proper optimisation these nano-composite films may be used in nonreciprocal and magnetically tuned devices in silicon substrate based Multi-Chip Modules (MCM).
{"title":"Silicon substrate integrated ferromagnetic nanowires for microwave applications","authors":"A. Deleniv, V. Drakinsky, P. Evans, R. Pollard, R. Bowman, S. Gevorgian","doi":"10.1109/emicc.2007.4412762","DOIUrl":"https://doi.org/10.1109/emicc.2007.4412762","url":null,"abstract":"Magneto-dielectric nano-composite (magnetic nanowire in anodic alumina) films are fabricated on silicon substrate. Kerr measurements reveal magnetic properties of the nano-composite, while the microwave measurements in the frequency band 0.2-18 GHz show relatively low dielectric losses. After a proper optimisation these nano-composite films may be used in nonreciprocal and magnetically tuned devices in silicon substrate based Multi-Chip Modules (MCM).","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114100281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/eumc.2007.4405446
I. McGregor, E. Wasige, I. Thayne
This paper describes how duty cycling can reduce the power consumption of an On Off Keying (OOK), 2.4 GHz, super regenerative transceiver from 400 muW for the transmit (Tx) to 30 muW and from 380 muW for the receive (Rx) to 10 muW. This is a power reduction of 92.5 % for the Tx and 97.4 % for the Rx. Despite the low power consumption exhibited by the Tx an effective output power of -11 dBm is achieved. This is due to the fact that the Tx oscillator is turned on for a very short period of time compared to the bit period. The output of the Rx is then lengthened digitally to reproduce the correct duty cycle. The duty cycled Rx achieves an output voltage of 1 mV for an input power of -50 dBm. Also presented is a high impedance receiver which produces an output of 5 mV for an input power of -90 dBm.
{"title":"Sub-50μW, 2.4 GHz super-regenerative transceiver with ultra low duty cycle and a 675μW high impedance super-regenerative receiver","authors":"I. McGregor, E. Wasige, I. Thayne","doi":"10.1109/eumc.2007.4405446","DOIUrl":"https://doi.org/10.1109/eumc.2007.4405446","url":null,"abstract":"This paper describes how duty cycling can reduce the power consumption of an On Off Keying (OOK), 2.4 GHz, super regenerative transceiver from 400 muW for the transmit (Tx) to 30 muW and from 380 muW for the receive (Rx) to 10 muW. This is a power reduction of 92.5 % for the Tx and 97.4 % for the Rx. Despite the low power consumption exhibited by the Tx an effective output power of -11 dBm is achieved. This is due to the fact that the Tx oscillator is turned on for a very short period of time compared to the bit period. The output of the Rx is then lengthened digitally to reproduce the correct duty cycle. The duty cycled Rx achieves an output voltage of 1 mV for an input power of -50 dBm. Also presented is a high impedance receiver which produces an output of 5 mV for an input power of -90 dBm.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126195914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/eumc.2007.4405431
Won-Jun Choi, Young-Ho Lee, Nam-Young Kim
In this paper, an InGaP/GaAs HBT Broadband MMIC Mixer with high output power is designed within a total chip area of 1.3 x 1.0 mm2. The down-conversion mixer shows return loss of -10 dB and a conversion gain of +2.6 dB in the broadband frequency range of 400 MHz to 8 GHz. It also shows a third-order input intercept point (IIP3) of+ 16.78 dBm, a third-order output intercept point (OIP3) of +19.38 dBm, and an output-referred 1-dB compression point (PldB,out) of+10 dBm. The LO-RF leakage is -84dBm and LO-IF is -60 dBm, respectively.
{"title":"Broadband MMIC Mixer with high output power using InGaP/GaAs HBT technology","authors":"Won-Jun Choi, Young-Ho Lee, Nam-Young Kim","doi":"10.1109/eumc.2007.4405431","DOIUrl":"https://doi.org/10.1109/eumc.2007.4405431","url":null,"abstract":"In this paper, an InGaP/GaAs HBT Broadband MMIC Mixer with high output power is designed within a total chip area of 1.3 x 1.0 mm2. The down-conversion mixer shows return loss of -10 dB and a conversion gain of +2.6 dB in the broadband frequency range of 400 MHz to 8 GHz. It also shows a third-order input intercept point (IIP3) of+ 16.78 dBm, a third-order output intercept point (OIP3) of +19.38 dBm, and an output-referred 1-dB compression point (PldB,out) of+10 dBm. The LO-RF leakage is -84dBm and LO-IF is -60 dBm, respectively.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125858372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ecwt.2007.4404016
H. El Aabbaom, B. Gorissez, N. Rolland, A. Benlarbi-Delai, N. Fel, V. Allouche, P. Leclerc, B. Riondef, P. Rolland
This paper describes the design and realization of a buffered track and hoId (BTH) circuit fabricated in InP-InGaAs-InP double heterojunction bipolar transistor (DHBT) technology (FT = 180 GHz). This BTH is intended for a single shot, 20 GHz bandwidth and 40 GS/s sampling frequency digitizer based on the non simultaneous spatial sampling principle. Based on a high speed switched emitter follower (SEF), the BTH can ensure 20 GHz bandwidth signal compatible with the targeted objectives. First experimental results in the frequency domain and a novel optimized architecture leading to a combination between thr SEF arid the Cherry Hooper design based buffer are also presented.
{"title":"Design of a [DC - 20 GHz] buffered track and hold circuit in InP DHBT technology","authors":"H. El Aabbaom, B. Gorissez, N. Rolland, A. Benlarbi-Delai, N. Fel, V. Allouche, P. Leclerc, B. Riondef, P. Rolland","doi":"10.1109/ecwt.2007.4404016","DOIUrl":"https://doi.org/10.1109/ecwt.2007.4404016","url":null,"abstract":"This paper describes the design and realization of a buffered track and hoId (BTH) circuit fabricated in InP-InGaAs-InP double heterojunction bipolar transistor (DHBT) technology (FT = 180 GHz). This BTH is intended for a single shot, 20 GHz bandwidth and 40 GS/s sampling frequency digitizer based on the non simultaneous spatial sampling principle. Based on a high speed switched emitter follower (SEF), the BTH can ensure 20 GHz bandwidth signal compatible with the targeted objectives. First experimental results in the frequency domain and a novel optimized architecture leading to a combination between thr SEF arid the Cherry Hooper design based buffer are also presented.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121426353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/eumc.2007.4405392
B. Jackson, C. Saavedra
A 3 GHz quadrature oscillator has been designed, fabricated, and measured using CMOS 0.18 mum technology. The oscillator uses an active superharmonic coupling technique to generate the quadrature signals. By using two identical LC differential oscillators with a 180deg relationship enforced between the second-order harmonics that are present at the common-mode nodes, quadrature outputs are obtained at the fundamental frequency. Quadrature oscillations were achieved at 3.0 GHz with a measured output power of -6 dBm. The phase error in the fundamental quadrature outputs is less than 6deg and the power consumption for the core of the oscillator is 7.5 mW. The phase noise performance is -116 dBc/Hz at a 1 MHz offset and the figure of merit is -177 dBc/Hz. The layout for this circuit is very compact at 650 mum times 500 mum.
{"title":"A 3 GHz CMOS Quadrature oscillator using active superharmonic coupling","authors":"B. Jackson, C. Saavedra","doi":"10.1109/eumc.2007.4405392","DOIUrl":"https://doi.org/10.1109/eumc.2007.4405392","url":null,"abstract":"A 3 GHz quadrature oscillator has been designed, fabricated, and measured using CMOS 0.18 mum technology. The oscillator uses an active superharmonic coupling technique to generate the quadrature signals. By using two identical LC differential oscillators with a 180deg relationship enforced between the second-order harmonics that are present at the common-mode nodes, quadrature outputs are obtained at the fundamental frequency. Quadrature oscillations were achieved at 3.0 GHz with a measured output power of -6 dBm. The phase error in the fundamental quadrature outputs is less than 6deg and the power consumption for the core of the oscillator is 7.5 mW. The phase noise performance is -116 dBc/Hz at a 1 MHz offset and the figure of merit is -177 dBc/Hz. The layout for this circuit is very compact at 650 mum times 500 mum.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125981403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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