Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412638
M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, G. Dambrine, S. Bollaert, J. Grahn
Fabrication and characterization of 225 nm gate-length InAs/AlSb HEMTs with excellent RF performance are reported. We show the importance of an insulating layer between the gate and the semiconductor to improve gm, fT and fmax, and most important from a noise perspective, the gate-leakage current IG. By using an insulated-gate, IG was reduced by two orders of magnitude. The insulated-gate HEMTs exhibited extrinsic fT and fmax of 155 GHz and 115 GHz, respectively, at VDS=0.5 V.
{"title":"Characterization of insulated-gate versus schottky-gate InAs/AlSb HEMTs","authors":"M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, G. Dambrine, S. Bollaert, J. Grahn","doi":"10.1109/EMICC.2007.4412638","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412638","url":null,"abstract":"Fabrication and characterization of 225 nm gate-length InAs/AlSb HEMTs with excellent RF performance are reported. We show the importance of an insulating layer between the gate and the semiconductor to improve g<sub>m</sub>, f<sub>T</sub> and f<sub>max</sub>, and most important from a noise perspective, the gate-leakage current I<sub>G</sub>. By using an insulated-gate, I<sub>G</sub> was reduced by two orders of magnitude. The insulated-gate HEMTs exhibited extrinsic f<sub>T</sub> and f<sub>max</sub> of 155 GHz and 115 GHz, respectively, at V<sub>DS</sub>=0.5 V.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124838845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412636
M. Bao, Yinggang Li
A new mixer topology is proposed which combines in parallel two single-balanced mixers, one Gilbert mixer and the other a so-called transconductance mixer. Such a mixer is supposed to improve linearity performance without degradation in noise figure and conversion gain. Based on the proposed topology, an active mixer operating at 23 GHz has been designed and fabricated in InGaP/GaAs technology. Under a power consumption of 52.6 mW, the measured IIP3 is +12 dBm, with 4 dB conversion gain and 11.5 dB double sideband noise figure.
{"title":"An active mixer topology for high linearity and high frequency applications","authors":"M. Bao, Yinggang Li","doi":"10.1109/EMICC.2007.4412636","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412636","url":null,"abstract":"A new mixer topology is proposed which combines in parallel two single-balanced mixers, one Gilbert mixer and the other a so-called transconductance mixer. Such a mixer is supposed to improve linearity performance without degradation in noise figure and conversion gain. Based on the proposed topology, an active mixer operating at 23 GHz has been designed and fabricated in InGaP/GaAs technology. Under a power consumption of 52.6 mW, the measured IIP3 is +12 dBm, with 4 dB conversion gain and 11.5 dB double sideband noise figure.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114299702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412641
G. Torregrosa, J. Grajal, M. Peroni, A. Serino, A. Nanni, A. Cetronio
In this paper a procedure to extract temperature dependent equivalent circuits for modeling the small and large signal behavior of GaN HEMTs is presented. The technique explained in this work uses pulsed I-V measurements to obtain the temperature dependence of the parameters describing the nonlinear drain current source behavior. The equivalent circuits extracted are capable of correctly modeling the DC, small signal and large signal characteristics of GaN HEMTs devices. Simulations and measurements carried out on three transistors developed by SELEX-SI are compared over a wide range of frequencies, bias and load conditions.
{"title":"Large-Signal modeling of power GaN HEMTs including thermal effects","authors":"G. Torregrosa, J. Grajal, M. Peroni, A. Serino, A. Nanni, A. Cetronio","doi":"10.1109/EMICC.2007.4412641","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412641","url":null,"abstract":"In this paper a procedure to extract temperature dependent equivalent circuits for modeling the small and large signal behavior of GaN HEMTs is presented. The technique explained in this work uses pulsed I-V measurements to obtain the temperature dependence of the parameters describing the nonlinear drain current source behavior. The equivalent circuits extracted are capable of correctly modeling the DC, small signal and large signal characteristics of GaN HEMTs devices. Simulations and measurements carried out on three transistors developed by SELEX-SI are compared over a wide range of frequencies, bias and load conditions.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114545824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412681
M. Rudolph, P. Heymann
Although the shot-noise sources in bipolar transistors are strongly correlated, it is highly desirable for several reasons to rely on an approximative model that requires only noncorrelated sources. The two common topologies employing either two noncorrelated noise-current sources, or a noise-voltage and a noise-current source, are analytically analyzed and experimentally compared for the example of a GalnP/GaAs HBT. Differences and limitations of the two models are discussed, and it is shown how the topology can be modified in order to formulate a model based on noncorrelated sources that is accurate up to the transit frequency.
{"title":"Comparative study of shot-noise models for HBTs","authors":"M. Rudolph, P. Heymann","doi":"10.1109/EMICC.2007.4412681","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412681","url":null,"abstract":"Although the shot-noise sources in bipolar transistors are strongly correlated, it is highly desirable for several reasons to rely on an approximative model that requires only noncorrelated sources. The two common topologies employing either two noncorrelated noise-current sources, or a noise-voltage and a noise-current source, are analytically analyzed and experimentally compared for the example of a GalnP/GaAs HBT. Differences and limitations of the two models are discussed, and it is shown how the topology can be modified in order to formulate a model based on noncorrelated sources that is accurate up to the transit frequency.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116095441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412775
I. Ju, I. Yom, Seung-hyeup Oh
A new vertical transition using a trough line, a slab line and shielded multilayer coplanar waveguides (SMCPW) was proposed in order to develop a DC to 50 GHz band low loss LTCC hermetic surface mounting (SMT) MMIC package. The trough line, the slab line and the SMCPWs were employed to minimize the radiation loss, crosstalk and discontinuity of the conventional via vertical transition. The proposed vertical transition was made with the multiple transmission lines that consist of the SMCPW1 -trough line -slab line -SMCPW2 -SMCPW3. The manufactured LTCC hermetic SMT MMIC package showed the low insertion loss less than 0.6 dB and the reflection loss below -20 dB in the frequency range from DC to 53 GHz.
{"title":"Novel vertical transition using a trough line, a slab line and shielded multilayer coplanar waveguides for 50 GHz LTCC hermetic SMT MMIC package","authors":"I. Ju, I. Yom, Seung-hyeup Oh","doi":"10.1109/EMICC.2007.4412775","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412775","url":null,"abstract":"A new vertical transition using a trough line, a slab line and shielded multilayer coplanar waveguides (SMCPW) was proposed in order to develop a DC to 50 GHz band low loss LTCC hermetic surface mounting (SMT) MMIC package. The trough line, the slab line and the SMCPWs were employed to minimize the radiation loss, crosstalk and discontinuity of the conventional via vertical transition. The proposed vertical transition was made with the multiple transmission lines that consist of the SMCPW1 -trough line -slab line -SMCPW2 -SMCPW3. The manufactured LTCC hermetic SMT MMIC package showed the low insertion loss less than 0.6 dB and the reflection loss below -20 dB in the frequency range from DC to 53 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123701972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412729
E. Napieralska, M. Zannoth, G. Kraut, E. Biebl
This paper presents investigations on outphasing power amplifier realizations based on a 2-stage 0.35 mum SiGe-bipolar PA design for 850 MHz and 1800 MHz. A Chireix combiner, a 90deg hybrid coupler and a Wilkinson power combiner were designed and all types were characterized in terms of efficiency and linearity for the usage in mobile phone applications.
本文研究了850 MHz和1800 MHz下基于2级0.35 ma sige双极PA设计的失相功率放大器的实现。设计了Chireix合成器、90度混合耦合器和Wilkinson功率合成器，并对所有类型的合成器在手机应用中的效率和线性度进行了描述。
{"title":"Outphasing power amplifier design investigations for 2.5G and 3G standards","authors":"E. Napieralska, M. Zannoth, G. Kraut, E. Biebl","doi":"10.1109/EMICC.2007.4412729","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412729","url":null,"abstract":"This paper presents investigations on outphasing power amplifier realizations based on a 2-stage 0.35 mum SiGe-bipolar PA design for 850 MHz and 1800 MHz. A Chireix combiner, a 90deg hybrid coupler and a Wilkinson power combiner were designed and all types were characterized in terms of efficiency and linearity for the usage in mobile phone applications.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"91 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114021769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412692
F. Carrara, A. Italia, A. Scuderi, E. Ragonese, G. Sapone, C. Presti, G. Palmisano
Circuit design techniques for integrating low-power multi-standard WLAN transceivers are presented in this paper. Several circuital approaches have been implemented and successfully demonstrated for the most critical blocks of a WLAN transceiver. The transmitter front-end is implemented by means of a current-reuse variable-gain up-converter. The circuit provides an output 1-dB compression point of 5.3 dBm, while consuming only 45 mA from a 3-V supply voltage. Moreover, a linear-in-dB gain control characteristic is achieved over a 35-dB dynamic range. In the receiver chain, a variable-gain LNA allows excellent noise figure and linearity performance to be achieved with low power consumption. The PLL makes use of a transformer-based VCO featuring low-phase noise and wide tuning range performance.
{"title":"Low-power RF circuits for multi-standard WLAN transceivers","authors":"F. Carrara, A. Italia, A. Scuderi, E. Ragonese, G. Sapone, C. Presti, G. Palmisano","doi":"10.1109/EMICC.2007.4412692","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412692","url":null,"abstract":"Circuit design techniques for integrating low-power multi-standard WLAN transceivers are presented in this paper. Several circuital approaches have been implemented and successfully demonstrated for the most critical blocks of a WLAN transceiver. The transmitter front-end is implemented by means of a current-reuse variable-gain up-converter. The circuit provides an output 1-dB compression point of 5.3 dBm, while consuming only 45 mA from a 3-V supply voltage. Moreover, a linear-in-dB gain control characteristic is achieved over a 35-dB dynamic range. In the receiver chain, a variable-gain LNA allows excellent noise figure and linearity performance to be achieved with low power consumption. The PLL makes use of a transformer-based VCO featuring low-phase noise and wide tuning range performance.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132449778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412678
R. Ishikawa, K. Honjo, M. Nakajima
A global analysis for a millimeter-wave amplifier module with surface wave mode transmission lines has been demonstrated. The analysis method is a co-simulation between an FDTD-based electromagnetic simulator and a semiconductor device simulator. Using this method, it is possible to consider various electromagnetic coupling between transmission lines and active devices with nonlinear characteristics. Furthermore, a semiconductor device simulation is more accurate than an approximation to a large-signal equivalent circuit. The incorporated simulation was demonstrated for a millimeter-wave amplifier module which consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeter-wave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by discontinuity structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere the PDTL and transistors mounted on the PDTL. Using the co-simulation technique, influence of the scattering waves was investigated in detail for the amplifier module.
{"title":"Global analysis for a surface wave mode HFET amplifier module at 60 GHz by EM-device co-simulation","authors":"R. Ishikawa, K. Honjo, M. Nakajima","doi":"10.1109/EMICC.2007.4412678","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412678","url":null,"abstract":"A global analysis for a millimeter-wave amplifier module with surface wave mode transmission lines has been demonstrated. The analysis method is a co-simulation between an FDTD-based electromagnetic simulator and a semiconductor device simulator. Using this method, it is possible to consider various electromagnetic coupling between transmission lines and active devices with nonlinear characteristics. Furthermore, a semiconductor device simulation is more accurate than an approximation to a large-signal equivalent circuit. The incorporated simulation was demonstrated for a millimeter-wave amplifier module which consists of an HFET and planar dielectric transmission lines (PDTL) at 60-GHz region. The PDTL with a surface wave transmission mode has a low-loss transmission characteristic at millimeter-wave region using a low-loss ceramic substrate. However, the transmission wave on the PDTL tends to be scattered by discontinuity structures and impedance mismatching. Furthermore, it is predicted that reflected scattered waves at edges of the substrate interfere the PDTL and transistors mounted on the PDTL. Using the co-simulation technique, influence of the scattering waves was investigated in detail for the amplifier module.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130747061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412665
C. Fager, P. M. Lavrador, M. Myslinski, A. Zhu
This paper demonstrates the extraction of three different system level behavioural models of power amplifiers from large signal time domain measurements. The modelling results are evaluated using a common independent CDMA2000SR1 telecommunication input signal. The capability of the models to predict long term memory effects is also evaluated by artificially modifying the bias network in one of the PA prototypes.
{"title":"System level modelling of RF power amplifiers based on large-signal measurements","authors":"C. Fager, P. M. Lavrador, M. Myslinski, A. Zhu","doi":"10.1109/EMICC.2007.4412665","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412665","url":null,"abstract":"This paper demonstrates the extraction of three different system level behavioural models of power amplifiers from large signal time domain measurements. The modelling results are evaluated using a common independent CDMA2000SR1 telecommunication input signal. The capability of the models to predict long term memory effects is also evaluated by artificially modifying the bias network in one of the PA prototypes.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133517485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412651
V. Subramanian, Van-Hoang Do, W. Keusgen, G. Boeck
This work presents an active downconverter targeted for integration in 60 GHz high speed data communication RF front-ends. The designed downconverter has been realized in 0.25 mum SiGe BiCMOS technology with ft around 200 GHz. The downconverter consists of a single balanced mixer with an on-chip balun for differential to single ended conversion. High linearity and bandwidth are the main design goals rather than high gain. A clear-cut investigation of the applied bottom up design approach was presented with emphasis on modeling the critical on-chip signal path interconnects, matching and filtering components. The design and applied methodologies will be justified by comparing the measured and simulated performances. At 60 GHz an input 1-dB power compression of -5 dBm, 2.5 dB conversion gain and a gain variation around 2 dB from 50 to 70 GHz, are measured. Current consumption of the mixer core is 4.7 mA from a 3.3 V supply and the active chip area is 0.48 mm2.
{"title":"60 GHz SiGe HBT downconversion mixer","authors":"V. Subramanian, Van-Hoang Do, W. Keusgen, G. Boeck","doi":"10.1109/EMICC.2007.4412651","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412651","url":null,"abstract":"This work presents an active downconverter targeted for integration in 60 GHz high speed data communication RF front-ends. The designed downconverter has been realized in 0.25 mum SiGe BiCMOS technology with ft around 200 GHz. The downconverter consists of a single balanced mixer with an on-chip balun for differential to single ended conversion. High linearity and bandwidth are the main design goals rather than high gain. A clear-cut investigation of the applied bottom up design approach was presented with emphasis on modeling the critical on-chip signal path interconnects, matching and filtering components. The design and applied methodologies will be justified by comparing the measured and simulated performances. At 60 GHz an input 1-dB power compression of -5 dBm, 2.5 dB conversion gain and a gain variation around 2 dB from 50 to 70 GHz, are measured. Current consumption of the mixer core is 4.7 mA from a 3.3 V supply and the active chip area is 0.48 mm2.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131345569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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