Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412794
J. Flucke, C. Meliani, F. Schnieder, W. Heinrich
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.
{"title":"Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs","authors":"J. Flucke, C. Meliani, F. Schnieder, W. Heinrich","doi":"10.1109/EMICC.2007.4412794","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412794","url":null,"abstract":"This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412697
H. Berg, H. Thiesies, M. Hertz, F. Norling
A mixed signal receiver IC for C-band radars is presented. The design work has been focused on spectral purity and miniaturization. Miniaturization is achieved by minimizing peripheral components and control signals using internal calibration data and temperature compensation tables stored in RAM on-chip. This allows for the packaged chip to be used with a minimum of. The chip is manufactured by Austria Microsystems in their 0.35 um SiGe-BiCMOS process and utilizes digital IP-block included in the design kit.
介绍了一种用于c波段雷达的混合信号接收集成电路。设计工作的重点是光谱纯度和小型化。小型化是通过使用存储在片上RAM中的内部校准数据和温度补偿表来最小化外围元件和控制信号来实现的。这使得封装的芯片可以使用最小的。该芯片由奥地利微系统公司在其0.35 um SiGe-BiCMOS工艺中制造，并利用设计套件中包含的数字ip块。
{"title":"A high linearity mixed signal down converter IC for C-band radar receivers","authors":"H. Berg, H. Thiesies, M. Hertz, F. Norling","doi":"10.1109/EMICC.2007.4412697","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412697","url":null,"abstract":"A mixed signal receiver IC for C-band radars is presented. The design work has been focused on spectral purity and miniaturization. Miniaturization is achieved by minimizing peripheral components and control signals using internal calibration data and temperature compensation tables stored in RAM on-chip. This allows for the packaged chip to be used with a minimum of. The chip is manufactured by Austria Microsystems in their 0.35 um SiGe-BiCMOS process and utilizes digital IP-block included in the design kit.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122321623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412684
Hui Li, Z. Ma, G. Niu
Triggered by the recent discoveries on the superior high-frequency performance exhibited by the common-base (CB) SiGe HBTs over the common-emitter (CE) ones, noise characteristics of the CB SiGe HBT are investigated in this paper. Accurate RF shot noise models are derived for CB SiGe HBTs and used to calculate their minimum noise figure (NFmin). The NFmin of CB SiGe HBTs are then compared with that of the CE SiGe HBTs. Simplified noise models can be obtained for both CE and CB SiGe HBTs by ignoring the base resistance effects in order to obtain an explicit expression of the NFmin for both configurations. It is found, from applying the noise models into CE and CB SiGe HBTs, that the simplified noise model can provide the same noise figure as the improved model for CE SiGe HBTs, while different results were obtained for CB SiGe HBTs. The difference indicates the critical importance of including base resistance in modelling the noise characteristics of CB SiGe HBTs. Regardless of the difference of NFmin between CE and CB SiGe HBTs, CB SiGe HBTs also exhibit low NFmin while offering their potential higher associated power gain values for promising implementation in low-noise amplifiers.
{"title":"Transport shot noise models and NFmin comparison for SiGe HBTs under different operation configurations","authors":"Hui Li, Z. Ma, G. Niu","doi":"10.1109/EMICC.2007.4412684","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412684","url":null,"abstract":"Triggered by the recent discoveries on the superior high-frequency performance exhibited by the common-base (CB) SiGe HBTs over the common-emitter (CE) ones, noise characteristics of the CB SiGe HBT are investigated in this paper. Accurate RF shot noise models are derived for CB SiGe HBTs and used to calculate their minimum noise figure (NFmin). The NFmin of CB SiGe HBTs are then compared with that of the CE SiGe HBTs. Simplified noise models can be obtained for both CE and CB SiGe HBTs by ignoring the base resistance effects in order to obtain an explicit expression of the NFmin for both configurations. It is found, from applying the noise models into CE and CB SiGe HBTs, that the simplified noise model can provide the same noise figure as the improved model for CE SiGe HBTs, while different results were obtained for CB SiGe HBTs. The difference indicates the critical importance of including base resistance in modelling the noise characteristics of CB SiGe HBTs. Regardless of the difference of NFmin between CE and CB SiGe HBTs, CB SiGe HBTs also exhibit low NFmin while offering their potential higher associated power gain values for promising implementation in low-noise amplifiers.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132602105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412643
K. Yuk, G. Branner
A new, simplified empirical large-signal model for high power microwave SiC MESFFTs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significantly due to current dispersion. Thv drain current source is based on pulsed IV measurements and accurately predicts the gm and gds without supplemental RF current source generators as typically used in other models. The model is shown to accurately predict the output and input reflected power over an available power range of +10dBm to +36dBm for three harmonics while maintaining the ability to compute the small-signal S-parameters.
{"title":"A simplified, empirical large-signal model for SiC MESFETs","authors":"K. Yuk, G. Branner","doi":"10.1109/EMICC.2007.4412643","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412643","url":null,"abstract":"A new, simplified empirical large-signal model for high power microwave SiC MESFFTs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significantly due to current dispersion. Thv drain current source is based on pulsed IV measurements and accurately predicts the gm and gds without supplemental RF current source generators as typically used in other models. The model is shown to accurately predict the output and input reflected power over an available power range of +10dBm to +36dBm for three harmonics while maintaining the ability to compute the small-signal S-parameters.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126213457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412771
P. Blondy, A. Crunteanu, A. Pothier, P. Tristant, A. Catherinot, C. Champeaux
The influence of atmosphere on capacitive RF-MEMS switches is studied. It is shown that ambient atmosphere not only induces an incremental effect on the degradation of MEMS switches but also completely changes the charging mechanism of the dielectrics, directly linked with RF-MEMS reliability behaviour of MEMS switches reliability. Operating RF-MEMS switches in a dry environment changes the mechanism of charging from surface charging to bulk charging.
{"title":"Effects of atmosphere on the reliability of RF-MEMS capacitive switches","authors":"P. Blondy, A. Crunteanu, A. Pothier, P. Tristant, A. Catherinot, C. Champeaux","doi":"10.1109/EMICC.2007.4412771","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412771","url":null,"abstract":"The influence of atmosphere on capacitive RF-MEMS switches is studied. It is shown that ambient atmosphere not only induces an incremental effect on the degradation of MEMS switches but also completely changes the charging mechanism of the dielectrics, directly linked with RF-MEMS reliability behaviour of MEMS switches reliability. Operating RF-MEMS switches in a dry environment changes the mechanism of charging from surface charging to bulk charging.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125986681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412649
V. Di Giacomo, A. Santarelli, F. Filicori, A. Raffo, G. Vannini, R. Aubry, C. Gaquière
Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.
{"title":"Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs","authors":"V. Di Giacomo, A. Santarelli, F. Filicori, A. Raffo, G. Vannini, R. Aubry, C. Gaquière","doi":"10.1109/EMICC.2007.4412649","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412649","url":null,"abstract":"Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122871439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412670
C. Costrini, M. Calori, C. Lanzieri, C. Proietti
The development of a MMIC HPA designed for X-band radar applications is reported. The chip was fabricated with a low-cost 0.4 mum GaAs PHEMT process and is composed of two stages, with a final stage of 16 mm gate-width periphery. In the frequency bandwidth 8.5-11 GHz, the HPA delivers an output power of 8 W @ 3dB compression point, with an associated PAE of circa 30%.
报道了一种用于x波段雷达应用的MMIC HPA的研制。该芯片采用低成本的0.4 μ m GaAs PHEMT工艺制造，由两个阶段组成，最后阶段的栅极宽度为16 mm。在8.5- 11ghz频段，HPA输出功率为8w @ 3dB压缩点，相关PAE约为30%。
{"title":"A 25 % bandwidth 8 W X-band HPA for radar applications","authors":"C. Costrini, M. Calori, C. Lanzieri, C. Proietti","doi":"10.1109/EMICC.2007.4412670","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412670","url":null,"abstract":"The development of a MMIC HPA designed for X-band radar applications is reported. The chip was fabricated with a low-cost 0.4 mum GaAs PHEMT process and is composed of two stages, with a final stage of 16 mm gate-width periphery. In the frequency bandwidth 8.5-11 GHz, the HPA delivers an output power of 8 W @ 3dB compression point, with an associated PAE of circa 30%.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115218193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412656
S. Boulay, S. Touati, Y. Cordier, F. Semond, J. Massies
This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) with 0.1 mum gamma shaped gate length on (001) oriented silicon substrate for microwave power applications. The gate technology is based on silicon nitride thin film and uses a digital etching to perform the recess through the SiN mask. Output current densities of 420 mA/mm, extrinsic cut-off frequencies (fT) of 28 GHz and maximum oscillations frequencies (fmax) of 46C Hz are measured on 300 mum gate periphery device. At 2.15 GK/., an output power density of 1 W/mm associated to a power added efficiency of 17% and a linear gain of 24 dB are achieved lit VDS = 30 V and VGS = -1.2 V.
{"title":"AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication","authors":"S. Boulay, S. Touati, Y. Cordier, F. Semond, J. Massies","doi":"10.1109/EMICC.2007.4412656","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412656","url":null,"abstract":"This paper shows the capability of AlGaN/GaN high electron mobility transistors (HEMTs) with 0.1 mum gamma shaped gate length on (001) oriented silicon substrate for microwave power applications. The gate technology is based on silicon nitride thin film and uses a digital etching to perform the recess through the SiN mask. Output current densities of 420 mA/mm, extrinsic cut-off frequencies (fT) of 28 GHz and maximum oscillations frequencies (fmax) of 46C Hz are measured on 300 mum gate periphery device. At 2.15 GK/., an output power density of 1 W/mm associated to a power added efficiency of 17% and a linear gain of 24 dB are achieved lit VDS = 30 V and VGS = -1.2 V.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114389227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412693
C.‐L. Lu, H.-C. Wang, J. Juang, H. Chuang
This paper proposes a new architecture for the implementation of an n-input XOR gate in ultrahigh-speed applications. The new circuitry makes it possible to let the conventional sequence logic with XOR feedback, such as Gold code generator, to work up to ten-gigabit per second. This paper will systematically describe the principle of substituting a set of differential switches for an XOR gate. The proposed circuitry is demonstrated in a five-stage Gold code generator implemented in TSMC 0.18-mum 1P6M CMOS process. The simulation results show that the delay of the proposed four-input XOR gate is so much improved as to let the five-stage (5,3) and (5,4,3,2) Gold code generator to work up to 10 Gb/s.
本文提出了一种在超高速应用中实现n输入异或门的新架构。新的电路使传统的异或反馈序列逻辑(如Gold代码生成器)能够以每秒10gb的速度工作。本文将系统地描述用一组差动开关代替异或门的原理。该电路在台积电0.18 μ m 1P6M CMOS工艺中实现的五级金码发生器中进行了演示。仿真结果表明，所提出的四输入异或门的延迟得到了很大的改善，使得五级(5,3)和(5,4,3,2)金码发生器的工作速度高达10gb /s。
{"title":"10-Gb/s CMOS ultrahigh-speed gold-code generator using differential-switches feedback","authors":"C.‐L. Lu, H.-C. Wang, J. Juang, H. Chuang","doi":"10.1109/EMICC.2007.4412693","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412693","url":null,"abstract":"This paper proposes a new architecture for the implementation of an n-input XOR gate in ultrahigh-speed applications. The new circuitry makes it possible to let the conventional sequence logic with XOR feedback, such as Gold code generator, to work up to ten-gigabit per second. This paper will systematically describe the principle of substituting a set of differential switches for an XOR gate. The proposed circuitry is demonstrated in a five-stage Gold code generator implemented in TSMC 0.18-mum 1P6M CMOS process. The simulation results show that the delay of the proposed four-input XOR gate is so much improved as to let the five-stage (5,3) and (5,4,3,2) Gold code generator to work up to 10 Gb/s.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127316548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412715
Kyoung-Min Kim, J. Yook, Sung-Ku Yeo, Young-Se Kwon
Various technologies have been developed to package microwave systems to achieve low-cost, high-integration, better RF performance and good thermal dissipation. In this paper, we propose a new type packaging technology, "pocket embedded packaging (PEP)", using selectively anodized aluminum substrate. In this technology, chips can be embedded inside aluminum substrate so that ultra thin and compact type of package can be achieved. More than 120 mum thick aluminum oxide (Al2O3) is selectively anodized on an aluminum substrate with 5% oxalic acid electrolyte. This thick aluminum oxide (Al2O3) can be chemically etched with vertical side walls. Rectangular-shape of opening area, which we named "pocket" is easily formed inside aluminum substrate. After the formation of the pocket, active chips can be embedded inside it with a tolerance of less than 3 mum. Passive components on an aluminum oxide (Al2O3) are interconnected with active chips through metallic interconnections.
{"title":"Embedded IC technology for compact packaging inside aluminum substrate (pocket embedded packaging)","authors":"Kyoung-Min Kim, J. Yook, Sung-Ku Yeo, Young-Se Kwon","doi":"10.1109/EMICC.2007.4412715","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412715","url":null,"abstract":"Various technologies have been developed to package microwave systems to achieve low-cost, high-integration, better RF performance and good thermal dissipation. In this paper, we propose a new type packaging technology, \"pocket embedded packaging (PEP)\", using selectively anodized aluminum substrate. In this technology, chips can be embedded inside aluminum substrate so that ultra thin and compact type of package can be achieved. More than 120 mum thick aluminum oxide (Al2O3) is selectively anodized on an aluminum substrate with 5% oxalic acid electrolyte. This thick aluminum oxide (Al2O3) can be chemically etched with vertical side walls. Rectangular-shape of opening area, which we named \"pocket\" is easily formed inside aluminum substrate. After the formation of the pocket, active chips can be embedded inside it with a tolerance of less than 3 mum. Passive components on an aluminum oxide (Al2O3) are interconnected with active chips through metallic interconnections.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131592958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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