Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412668
M. O'Droma, Yiming Lei
This paper presents advances in techniques for representing OFDM signals in nonlinear RF power amplifier behavioural modelling. OFDM is significantly sensitive to nonlinear distortion because of the high peak to average power ratio (PAPR) of its envelope. Four signal representation techniques are presented and compared. These are direct time domain method (DTD), mixed frequency and time domain method (MFTD), statistical approach (stat), and MFTD combined with a modified stat approach (MFTD-MS). AH four are applied to a Bessel Fourier behavioural model for a GaN nonlinear PA. This model is a particularly suitable tool for large dynamic range nonlinearity analysis of certain classes of multicarrier signals. The goal is to compare accuracy, preservation of modulation information, complexity and computer resource consumption.
{"title":"Comparison of four OFDM signal representations approaches for high dynamic range nonlinear PA behavioural modelling","authors":"M. O'Droma, Yiming Lei","doi":"10.1109/EMICC.2007.4412668","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412668","url":null,"abstract":"This paper presents advances in techniques for representing OFDM signals in nonlinear RF power amplifier behavioural modelling. OFDM is significantly sensitive to nonlinear distortion because of the high peak to average power ratio (PAPR) of its envelope. Four signal representation techniques are presented and compared. These are direct time domain method (DTD), mixed frequency and time domain method (MFTD), statistical approach (stat), and MFTD combined with a modified stat approach (MFTD-MS). AH four are applied to a Bessel Fourier behavioural model for a GaN nonlinear PA. This model is a particularly suitable tool for large dynamic range nonlinearity analysis of certain classes of multicarrier signals. The goal is to compare accuracy, preservation of modulation information, complexity and computer resource consumption.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128309748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412634
S. Gunnarsson, M. Ferndahl, H. Zirath
A 60 GHz compact single-chip sub-harmonically pumped receiver (RX) MMIC has been designed and characterized in a 0.15 mum, ~120 GHz fT/ >200 GHz fMAX GaAs mHEMT MMIC process. The single-chip multi-functional RX MMIC consists of a two-stage amplifier and a sub-harmonically pumped resistive mixer (SHPRM) with an ultra broadband active balun for the LO feed. The RX chip has a very flat frequency response and has only 0.3 dB of ripple between 60 and 65 GHz. A very broadband IF signal is possible with a 3 dB IF bandwidth of 6.8 GHz. The broadband IF is combined with a very good linearity, the input referred third order intercept point (IIP3) is as high as -5 dBm, making the receiver especially suitable for use in a homodync system, receiving data-rates of several Gbit/s. Those good results are obtained at a total DC power consumption as low as 154 mW.
{"title":"A 60 GHz compact single-chip sub-harmonically pumped receiver MMIC","authors":"S. Gunnarsson, M. Ferndahl, H. Zirath","doi":"10.1109/EMICC.2007.4412634","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412634","url":null,"abstract":"A 60 GHz compact single-chip sub-harmonically pumped receiver (RX) MMIC has been designed and characterized in a 0.15 mum, ~120 GHz fT/ >200 GHz fMAX GaAs mHEMT MMIC process. The single-chip multi-functional RX MMIC consists of a two-stage amplifier and a sub-harmonically pumped resistive mixer (SHPRM) with an ultra broadband active balun for the LO feed. The RX chip has a very flat frequency response and has only 0.3 dB of ripple between 60 and 65 GHz. A very broadband IF signal is possible with a 3 dB IF bandwidth of 6.8 GHz. The broadband IF is combined with a very good linearity, the input referred third order intercept point (IIP3) is as high as -5 dBm, making the receiver especially suitable for use in a homodync system, receiving data-rates of several Gbit/s. Those good results are obtained at a total DC power consumption as low as 154 mW.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121648190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412718
Y. Aoki, S. Shimizu, K. Honjo
Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.
{"title":"Novel symmetric high Q inductors fabricated using wafer-level CSP technology","authors":"Y. Aoki, S. Shimizu, K. Honjo","doi":"10.1109/EMICC.2007.4412718","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412718","url":null,"abstract":"Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126768310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412722
K. Segueni, L. Le Garrec, A. Rollier, R. Robin, S. Touati, A. Kanciurzewski, L. Buchaillot, O. Millet
This paper presents results concerning an electromechanical DC-contact shunt switch based on a patented totally free-flexible metal membrane combined with an associated low temperature surface micromachining fabrication process. The electrostatic actuation enables an average measured actuation voltage of 9.2V for a 5 mum out-of-plane membrane deflection. The switch exhibits low insertion loss (0.32 dB @ 10GHz) with good isolation (>30dB @ 10GHz).
本文介绍了一种基于全自由柔性金属膜的机电直流触点并联开关及其低温表面微加工工艺的研究结果。静电驱动使平均测量的驱动电压为9.2V，可实现5 μ m的面外膜偏转。该开关具有低插入损耗(0.32 dB @ 10GHz)和良好的隔离性(>30dB @ 10GHz)。
{"title":"Totally free-flexible membrane for low voltage MEMS metal contact switch","authors":"K. Segueni, L. Le Garrec, A. Rollier, R. Robin, S. Touati, A. Kanciurzewski, L. Buchaillot, O. Millet","doi":"10.1109/EMICC.2007.4412722","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412722","url":null,"abstract":"This paper presents results concerning an electromechanical DC-contact shunt switch based on a patented totally free-flexible metal membrane combined with an associated low temperature surface micromachining fabrication process. The electrostatic actuation enables an average measured actuation voltage of 9.2V for a 5 mum out-of-plane membrane deflection. The switch exhibits low insertion loss (0.32 dB @ 10GHz) with good isolation (>30dB @ 10GHz).","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127113787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412642
D. Xiao, D. Schreurs, W. De Raedt, J. Derluyn, K. Balachander, J. Viaene, M. Germain, B. Nauwelaers, G. Borghs
GaN field effect transistors (FETs) have a strong potential for high-power applications. However the RF performance of these devices often experiences limitation due to trapping effects and self-heating. These complicate the development of accurate large-signal models for GaN FETs. To simplify this process, a state-space modelling technique using an artificial neural network (ANN) is used in this work to model the large signal behaviour of the GaN device. In this way, the model is constructed directly from large-signal measurement data collected while the device is in an operating mode close to its application, i.e., class AB power amplifier (PA). To demonstrate the approach, a hybrid power amplifier based on GaN FETs was designed and fabricated. The good agreement between measurements and simulation results verifies the proposed approach. It is the first time that this modelling approach is used in circuit design.
{"title":"GaN power amplifier design based on artificial neural network modelling","authors":"D. Xiao, D. Schreurs, W. De Raedt, J. Derluyn, K. Balachander, J. Viaene, M. Germain, B. Nauwelaers, G. Borghs","doi":"10.1109/EMICC.2007.4412642","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412642","url":null,"abstract":"GaN field effect transistors (FETs) have a strong potential for high-power applications. However the RF performance of these devices often experiences limitation due to trapping effects and self-heating. These complicate the development of accurate large-signal models for GaN FETs. To simplify this process, a state-space modelling technique using an artificial neural network (ANN) is used in this work to model the large signal behaviour of the GaN device. In this way, the model is constructed directly from large-signal measurement data collected while the device is in an operating mode close to its application, i.e., class AB power amplifier (PA). To demonstrate the approach, a hybrid power amplifier based on GaN FETs was designed and fabricated. The good agreement between measurements and simulation results verifies the proposed approach. It is the first time that this modelling approach is used in circuit design.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131402125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412664
P. Colantonio, F. Giannini, R. Giofré, L. Piazzon
In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.
{"title":"Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology","authors":"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon","doi":"10.1109/EMICC.2007.4412664","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412664","url":null,"abstract":"In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133248170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412646
N. Zerounian, E.R. Garcia, F. Aniel, B. Barbalat, P. Chevalier, A. Chantre
The extrinsic electrostatic capacitances of high-speed SiGe HBTs are evaluated both with measurement and modeling. Shrinking dimensions of the core of the HBT increases the influence of the extrinsic capacitance in the performances. The extrinsic capacitances are of half values compare to the intrinsic ones, limiting the cut-off frequencies fT and fMAY by 10-12%, but care must be taken to avoid higher limitations associated with large electrostatic coupling in next device generation.
{"title":"Electrostatic capacitances of high-speed SiGe HBT","authors":"N. Zerounian, E.R. Garcia, F. Aniel, B. Barbalat, P. Chevalier, A. Chantre","doi":"10.1109/EMICC.2007.4412646","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412646","url":null,"abstract":"The extrinsic electrostatic capacitances of high-speed SiGe HBTs are evaluated both with measurement and modeling. Shrinking dimensions of the core of the HBT increases the influence of the extrinsic capacitance in the performances. The extrinsic capacitances are of half values compare to the intrinsic ones, limiting the cut-off frequencies fT and fMAY by 10-12%, but care must be taken to avoid higher limitations associated with large electrostatic coupling in next device generation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132429886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412675
K. Takagi, Y. Kashiwabara, K. Masuda, K. Matsushita, H. Sakurai, K. Onodera, H. Kawasaki, Y. Takada, K. Tsuda
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.
{"title":"Ku-band AlGaN/GaN HEMT with over 30W","authors":"K. Takagi, Y. Kashiwabara, K. Masuda, K. Matsushita, H. Sakurai, K. Onodera, H. Kawasaki, Y. Takada, K. Tsuda","doi":"10.1109/EMICC.2007.4412675","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412675","url":null,"abstract":"AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122360913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412677
E. Mitani, M. Aojima, S. Sano
We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.
{"title":"A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application","authors":"E. Mitani, M. Aojima, S. Sano","doi":"10.1109/EMICC.2007.4412677","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412677","url":null,"abstract":"We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124848046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412644
J. Mazeau, R. Sommet, D. Caban-Chastas, E. Gatard
This paper considers a new approach for nonlinear system level models dedicated to high RF power amplifiers. The constant increase of power density imposes to take into account of thermal effects. In this framework, a new electro-thermal behavioral model based on the coupling between a behavioral electrical model and a thermal reduced model predicting the operating temperature of the amplifier is expressed for radar application. This model has been successfully implemented into the Agilent Advanced Design System (ADS) circuit simulator. The transient thermal effects have been simulated thanks to an envelope transient analysis.
{"title":"New electrothermal system level model for RF power amplifier","authors":"J. Mazeau, R. Sommet, D. Caban-Chastas, E. Gatard","doi":"10.1109/EMICC.2007.4412644","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412644","url":null,"abstract":"This paper considers a new approach for nonlinear system level models dedicated to high RF power amplifiers. The constant increase of power density imposes to take into account of thermal effects. In this framework, a new electro-thermal behavioral model based on the coupling between a behavioral electrical model and a thermal reduced model predicting the operating temperature of the amplifier is expressed for radar application. This model has been successfully implemented into the Agilent Advanced Design System (ADS) circuit simulator. The transient thermal effects have been simulated thanks to an envelope transient analysis.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114313227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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