Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412668
M. O'Droma, Yiming Lei
This paper presents advances in techniques for representing OFDM signals in nonlinear RF power amplifier behavioural modelling. OFDM is significantly sensitive to nonlinear distortion because of the high peak to average power ratio (PAPR) of its envelope. Four signal representation techniques are presented and compared. These are direct time domain method (DTD), mixed frequency and time domain method (MFTD), statistical approach (stat), and MFTD combined with a modified stat approach (MFTD-MS). AH four are applied to a Bessel Fourier behavioural model for a GaN nonlinear PA. This model is a particularly suitable tool for large dynamic range nonlinearity analysis of certain classes of multicarrier signals. The goal is to compare accuracy, preservation of modulation information, complexity and computer resource consumption.
{"title":"Comparison of four OFDM signal representations approaches for high dynamic range nonlinear PA behavioural modelling","authors":"M. O'Droma, Yiming Lei","doi":"10.1109/EMICC.2007.4412668","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412668","url":null,"abstract":"This paper presents advances in techniques for representing OFDM signals in nonlinear RF power amplifier behavioural modelling. OFDM is significantly sensitive to nonlinear distortion because of the high peak to average power ratio (PAPR) of its envelope. Four signal representation techniques are presented and compared. These are direct time domain method (DTD), mixed frequency and time domain method (MFTD), statistical approach (stat), and MFTD combined with a modified stat approach (MFTD-MS). AH four are applied to a Bessel Fourier behavioural model for a GaN nonlinear PA. This model is a particularly suitable tool for large dynamic range nonlinearity analysis of certain classes of multicarrier signals. The goal is to compare accuracy, preservation of modulation information, complexity and computer resource consumption.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128309748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412634
S. Gunnarsson, M. Ferndahl, H. Zirath
A 60 GHz compact single-chip sub-harmonically pumped receiver (RX) MMIC has been designed and characterized in a 0.15 mum, ~120 GHz fT/ >200 GHz fMAX GaAs mHEMT MMIC process. The single-chip multi-functional RX MMIC consists of a two-stage amplifier and a sub-harmonically pumped resistive mixer (SHPRM) with an ultra broadband active balun for the LO feed. The RX chip has a very flat frequency response and has only 0.3 dB of ripple between 60 and 65 GHz. A very broadband IF signal is possible with a 3 dB IF bandwidth of 6.8 GHz. The broadband IF is combined with a very good linearity, the input referred third order intercept point (IIP3) is as high as -5 dBm, making the receiver especially suitable for use in a homodync system, receiving data-rates of several Gbit/s. Those good results are obtained at a total DC power consumption as low as 154 mW.
{"title":"A 60 GHz compact single-chip sub-harmonically pumped receiver MMIC","authors":"S. Gunnarsson, M. Ferndahl, H. Zirath","doi":"10.1109/EMICC.2007.4412634","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412634","url":null,"abstract":"A 60 GHz compact single-chip sub-harmonically pumped receiver (RX) MMIC has been designed and characterized in a 0.15 mum, ~120 GHz fT/ >200 GHz fMAX GaAs mHEMT MMIC process. The single-chip multi-functional RX MMIC consists of a two-stage amplifier and a sub-harmonically pumped resistive mixer (SHPRM) with an ultra broadband active balun for the LO feed. The RX chip has a very flat frequency response and has only 0.3 dB of ripple between 60 and 65 GHz. A very broadband IF signal is possible with a 3 dB IF bandwidth of 6.8 GHz. The broadband IF is combined with a very good linearity, the input referred third order intercept point (IIP3) is as high as -5 dBm, making the receiver especially suitable for use in a homodync system, receiving data-rates of several Gbit/s. Those good results are obtained at a total DC power consumption as low as 154 mW.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121648190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412718
Y. Aoki, S. Shimizu, K. Honjo
Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.
{"title":"Novel symmetric high Q inductors fabricated using wafer-level CSP technology","authors":"Y. Aoki, S. Shimizu, K. Honjo","doi":"10.1109/EMICC.2007.4412718","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412718","url":null,"abstract":"Wafer level chip-size package (WLP) technology enables fabrications of low-loss high-Q inductors, which suffer from unfavorable two-port asymmetric characteristics. To overcome this problem, a novel clip-type inductor has been proposed, where the electrode crossover points in multi-turn inductor structures is modified from a conventional mirror symmetric point to a novel electrical symmetric point. The novel clip inductors were designed and fabricated using WPL technology. By means of a developed 4-nH novel clip inductor, the Q-factor value difference between the two ports can be significantly reduced to 1.4% from 14.8% at 1.4 GHz. Q-factors of developed inductors have also been evaluated under both a conventional short-circuited load condition and an impedance matched condition.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126768310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412722
K. Segueni, L. Le Garrec, A. Rollier, R. Robin, S. Touati, A. Kanciurzewski, L. Buchaillot, O. Millet
This paper presents results concerning an electromechanical DC-contact shunt switch based on a patented totally free-flexible metal membrane combined with an associated low temperature surface micromachining fabrication process. The electrostatic actuation enables an average measured actuation voltage of 9.2V for a 5 mum out-of-plane membrane deflection. The switch exhibits low insertion loss (0.32 dB @ 10GHz) with good isolation (>30dB @ 10GHz).
本文介绍了一种基于全自由柔性金属膜的机电直流触点并联开关及其低温表面微加工工艺的研究结果。静电驱动使平均测量的驱动电压为9.2V，可实现5 μ m的面外膜偏转。该开关具有低插入损耗(0.32 dB @ 10GHz)和良好的隔离性(>30dB @ 10GHz)。
{"title":"Totally free-flexible membrane for low voltage MEMS metal contact switch","authors":"K. Segueni, L. Le Garrec, A. Rollier, R. Robin, S. Touati, A. Kanciurzewski, L. Buchaillot, O. Millet","doi":"10.1109/EMICC.2007.4412722","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412722","url":null,"abstract":"This paper presents results concerning an electromechanical DC-contact shunt switch based on a patented totally free-flexible metal membrane combined with an associated low temperature surface micromachining fabrication process. The electrostatic actuation enables an average measured actuation voltage of 9.2V for a 5 mum out-of-plane membrane deflection. The switch exhibits low insertion loss (0.32 dB @ 10GHz) with good isolation (>30dB @ 10GHz).","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127113787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412642
D. Xiao, D. Schreurs, W. De Raedt, J. Derluyn, K. Balachander, J. Viaene, M. Germain, B. Nauwelaers, G. Borghs
GaN field effect transistors (FETs) have a strong potential for high-power applications. However the RF performance of these devices often experiences limitation due to trapping effects and self-heating. These complicate the development of accurate large-signal models for GaN FETs. To simplify this process, a state-space modelling technique using an artificial neural network (ANN) is used in this work to model the large signal behaviour of the GaN device. In this way, the model is constructed directly from large-signal measurement data collected while the device is in an operating mode close to its application, i.e., class AB power amplifier (PA). To demonstrate the approach, a hybrid power amplifier based on GaN FETs was designed and fabricated. The good agreement between measurements and simulation results verifies the proposed approach. It is the first time that this modelling approach is used in circuit design.
{"title":"GaN power amplifier design based on artificial neural network modelling","authors":"D. Xiao, D. Schreurs, W. De Raedt, J. Derluyn, K. Balachander, J. Viaene, M. Germain, B. Nauwelaers, G. Borghs","doi":"10.1109/EMICC.2007.4412642","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412642","url":null,"abstract":"GaN field effect transistors (FETs) have a strong potential for high-power applications. However the RF performance of these devices often experiences limitation due to trapping effects and self-heating. These complicate the development of accurate large-signal models for GaN FETs. To simplify this process, a state-space modelling technique using an artificial neural network (ANN) is used in this work to model the large signal behaviour of the GaN device. In this way, the model is constructed directly from large-signal measurement data collected while the device is in an operating mode close to its application, i.e., class AB power amplifier (PA). To demonstrate the approach, a hybrid power amplifier based on GaN FETs was designed and fabricated. The good agreement between measurements and simulation results verifies the proposed approach. It is the first time that this modelling approach is used in circuit design.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131402125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412664
P. Colantonio, F. Giannini, R. Giofré, L. Piazzon
In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.
{"title":"Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology","authors":"P. Colantonio, F. Giannini, R. Giofré, L. Piazzon","doi":"10.1109/EMICC.2007.4412664","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412664","url":null,"abstract":"In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133248170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412646
N. Zerounian, E.R. Garcia, F. Aniel, B. Barbalat, P. Chevalier, A. Chantre
The extrinsic electrostatic capacitances of high-speed SiGe HBTs are evaluated both with measurement and modeling. Shrinking dimensions of the core of the HBT increases the influence of the extrinsic capacitance in the performances. The extrinsic capacitances are of half values compare to the intrinsic ones, limiting the cut-off frequencies fT and fMAY by 10-12%, but care must be taken to avoid higher limitations associated with large electrostatic coupling in next device generation.
{"title":"Electrostatic capacitances of high-speed SiGe HBT","authors":"N. Zerounian, E.R. Garcia, F. Aniel, B. Barbalat, P. Chevalier, A. Chantre","doi":"10.1109/EMICC.2007.4412646","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412646","url":null,"abstract":"The extrinsic electrostatic capacitances of high-speed SiGe HBTs are evaluated both with measurement and modeling. Shrinking dimensions of the core of the HBT increases the influence of the extrinsic capacitance in the performances. The extrinsic capacitances are of half values compare to the intrinsic ones, limiting the cut-off frequencies fT and fMAY by 10-12%, but care must be taken to avoid higher limitations associated with large electrostatic coupling in next device generation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132429886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412697
H. Berg, H. Thiesies, M. Hertz, F. Norling
A mixed signal receiver IC for C-band radars is presented. The design work has been focused on spectral purity and miniaturization. Miniaturization is achieved by minimizing peripheral components and control signals using internal calibration data and temperature compensation tables stored in RAM on-chip. This allows for the packaged chip to be used with a minimum of. The chip is manufactured by Austria Microsystems in their 0.35 um SiGe-BiCMOS process and utilizes digital IP-block included in the design kit.
介绍了一种用于c波段雷达的混合信号接收集成电路。设计工作的重点是光谱纯度和小型化。小型化是通过使用存储在片上RAM中的内部校准数据和温度补偿表来最小化外围元件和控制信号来实现的。这使得封装的芯片可以使用最小的。该芯片由奥地利微系统公司在其0.35 um SiGe-BiCMOS工艺中制造，并利用设计套件中包含的数字ip块。
{"title":"A high linearity mixed signal down converter IC for C-band radar receivers","authors":"H. Berg, H. Thiesies, M. Hertz, F. Norling","doi":"10.1109/EMICC.2007.4412697","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412697","url":null,"abstract":"A mixed signal receiver IC for C-band radars is presented. The design work has been focused on spectral purity and miniaturization. Miniaturization is achieved by minimizing peripheral components and control signals using internal calibration data and temperature compensation tables stored in RAM on-chip. This allows for the packaged chip to be used with a minimum of. The chip is manufactured by Austria Microsystems in their 0.35 um SiGe-BiCMOS process and utilizes digital IP-block included in the design kit.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122321623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412794
J. Flucke, C. Meliani, F. Schnieder, W. Heinrich
This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.
{"title":"Improved design methodology for a 2 GHz class-E hybrid power amplifier using packaged GaN-HEMTs","authors":"J. Flucke, C. Meliani, F. Schnieder, W. Heinrich","doi":"10.1109/EMICC.2007.4412794","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412794","url":null,"abstract":"This paper reports on design methodology and realization of a class-E power amplifier (PA) for 2 GHz using a packaged GaN-HEMT. The circuit achieves 36 dBm output power and 57% PAE, with drain efficiency as high as 62%. In addition to the large-signal simulation considerations, we discuss particularly the problem of input matching of the amplifier under class-E operation.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122132385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-12-26DOI: 10.1109/EMICC.2007.4412675
K. Takagi, Y. Kashiwabara, K. Masuda, K. Matsushita, H. Sakurai, K. Onodera, H. Kawasaki, Y. Takada, K. Tsuda
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.
{"title":"Ku-band AlGaN/GaN HEMT with over 30W","authors":"K. Takagi, Y. Kashiwabara, K. Masuda, K. Matsushita, H. Sakurai, K. Onodera, H. Kawasaki, Y. Takada, K. Tsuda","doi":"10.1109/EMICC.2007.4412675","DOIUrl":"https://doi.org/10.1109/EMICC.2007.4412675","url":null,"abstract":"AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.","PeriodicalId":436391,"journal":{"name":"2007 European Microwave Integrated Circuit Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122360913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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