Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802889
F. Mazen, M. Coig, A. Lardeau-Falcy, L. Amichi, M. Veillerot, C. Licitra, A. Grenier, J. Biscarrat, J. Kanyandekwe, M. Charles, F. Milési
Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).
{"title":"Doping of GaN grown on silicon via ion implantation","authors":"F. Mazen, M. Coig, A. Lardeau-Falcy, L. Amichi, M. Veillerot, C. Licitra, A. Grenier, J. Biscarrat, J. Kanyandekwe, M. Charles, F. Milési","doi":"10.23919/IWJT.2019.8802889","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802889","url":null,"abstract":"Since the last decade, power electronics is moving towards higher frequency and higher voltage applications. For this purpose, the use of silicon (Si) presents some limitations and new materials like Silicon Carbide (SiC) or more recently Gallium Nitride (GaN) have boomed. Because of its large bandgap and high breakdown voltage, GaN is a good candidate for high power device applications, as well as Radio Frequency (RF).","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"287 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117047099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802890
T. Hasegawa
Printed electronics aims to realize self-formation of electronics devices under ambient conditions via the printed patterned fluids that contain such as dispersed metal nanoparticles or soluble organic semiconductors [1] , [2] . These technologies are expected to realize facile productions of light weight and flexible human interface or energy harvesting devices without the use of huge vacuum facilities. In this talk, we present our recent studies to develop advanced printed electronics technologies for the production of all-printed and high-resolution thin-film transistors (TFTs) by utilizing self-organized characteristics of both silver nanoparticles and organic semiconductors. Specifically, we show that 1) novel printing principle via the nanoparticle chemisorption effect enables the formation of conductive silver patterning with submicron resolution, and 2) intrinsic high layered crystallinity of some organic semiconductors is quite effective to produce high performance printed organic TFTs. We also discuss that the junction technologies are crucial for these semiconductor devices, although the issues and features are fundamentally different from those in inorganic semiconductor devices.
{"title":"Advanced Printed Electronics – Materials and Junction Technologies","authors":"T. Hasegawa","doi":"10.23919/IWJT.2019.8802890","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802890","url":null,"abstract":"Printed electronics aims to realize self-formation of electronics devices under ambient conditions via the printed patterned fluids that contain such as dispersed metal nanoparticles or soluble organic semiconductors [1] , [2] . These technologies are expected to realize facile productions of light weight and flexible human interface or energy harvesting devices without the use of huge vacuum facilities. In this talk, we present our recent studies to develop advanced printed electronics technologies for the production of all-printed and high-resolution thin-film transistors (TFTs) by utilizing self-organized characteristics of both silver nanoparticles and organic semiconductors. Specifically, we show that 1) novel printing principle via the nanoparticle chemisorption effect enables the formation of conductive silver patterning with submicron resolution, and 2) intrinsic high layered crystallinity of some organic semiconductors is quite effective to produce high performance printed organic TFTs. We also discuss that the junction technologies are crucial for these semiconductor devices, although the issues and features are fundamentally different from those in inorganic semiconductor devices.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122998909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802623
H. Tanimura, H. Kawarazaki, T. Aoyama, S. Kato, Yoshihide Nozaki, R. Wada, T. Higuchi, T. Nagayama, T. Kuroi
Reduction of the contact resistance at source/drain and metal electrodes is one of the key challenges in the fabrication of high performance CMOS devices. In recent years, several studies have addressed the issue of minimizing the specific contact resistivity (ρ c ) [1] – [5] . Quite low values of ρ c in the sub-10 −9 ohm-cm 2 region have been reported for advanced technologies.
{"title":"Low Specific Contact Resistivity Measurements using a New Test Structure and its Reduction to 10−9 ohm-cm2 in p-type SiGe/Metal Contacts using Flash Lamp Annealing","authors":"H. Tanimura, H. Kawarazaki, T. Aoyama, S. Kato, Yoshihide Nozaki, R. Wada, T. Higuchi, T. Nagayama, T. Kuroi","doi":"10.23919/IWJT.2019.8802623","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802623","url":null,"abstract":"Reduction of the contact resistance at source/drain and metal electrodes is one of the key challenges in the fabrication of high performance CMOS devices. In recent years, several studies have addressed the issue of minimizing the specific contact resistivity (ρ c ) [1] – [5] . Quite low values of ρ c in the sub-10 −9 ohm-cm 2 region have been reported for advanced technologies.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124733039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802621
Hideki Sakurai, Masato Omori, S. Yamada, Akihiko Koura, Hideo Suzuki, T. Narita, K. Kataoka, M. Horita, Michal Bo kowski, J. Suda, T. Kachi
For the solution to global energy issues, highly-efficient energy conversion using next-generation power devices is required. Gallium nitride (GaN) having superior properties such as high breakdown electric field (2.8–3.75 MV/cm) is a powerful candidate for next-generation high-power semiconductor devices. [1] , [2] The selective area doping makes it possible to precisely engineer high-power devices with complex structures, allowing formation of low-resistivity region for contacting electrodes and optimization of the electric field configuration in the edge termination represented by the field limiting ring (FLR) and in the junction barrier Schottky (JBS) structures, as used in Si and SiC power devices. [3]
{"title":"Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing","authors":"Hideki Sakurai, Masato Omori, S. Yamada, Akihiko Koura, Hideo Suzuki, T. Narita, K. Kataoka, M. Horita, Michal Bo kowski, J. Suda, T. Kachi","doi":"10.23919/IWJT.2019.8802621","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802621","url":null,"abstract":"For the solution to global energy issues, highly-efficient energy conversion using next-generation power devices is required. Gallium nitride (GaN) having superior properties such as high breakdown electric field (2.8–3.75 MV/cm) is a powerful candidate for next-generation high-power semiconductor devices. [1] , [2] The selective area doping makes it possible to precisely engineer high-power devices with complex structures, allowing formation of low-resistivity region for contacting electrodes and optimization of the electric field configuration in the edge termination represented by the field limiting ring (FLR) and in the junction barrier Schottky (JBS) structures, as used in Si and SiC power devices. [3]","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122334932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802898
T. Matsushita, T. Muro, K. Tsutsui, T. Yokoya
Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, x-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.
兴奋剂是现代科学的一项重要技术。例如，为了制造半导体器件，通过掺杂控制载流子形成电路。由于掺杂的载流子发射随掺杂条件的不同而不同，因此寻找合适的条件是很重要的。掺杂剂周围的原子排列随条件的不同而不同。因此，人们希望观察掺杂剂周围的原子排列，但传统的测量方法很难做到这一点。原子分辨率全息技术，如光电子全息、x射线荧光全息、中子全息等，是测量掺杂剂三维原子排列的方法。其中，光电子全息法可以根据化学状态测量每种掺杂物的原子结构。我们在8年春季在BL25SU建造了光电子全息仪。我们还开发了3D- air - image软件平台，用于数据处理，光电子全息图模拟和三维原子图像重建。
{"title":"Three-dimensional dopant imaging in semiconductor crystals using photoelectron holography with chemical state identification","authors":"T. Matsushita, T. Muro, K. Tsutsui, T. Yokoya","doi":"10.23919/IWJT.2019.8802898","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802898","url":null,"abstract":"Doping is an important technology for modern science. For example, to create a semiconductor device, a circuit is formed by controlling carriers by doping. It is important to search for appropriate conditions since the carrier emission from dopant differs depending on the doping conditions. The atomic arrangement around the dopant differs depending on the conditions. Therefore, it has been desired to observe the atomic arrangement around the dopant, but it has been difficult with conventional measurement methods. The atomic resolution holography such as photoelectron holography, x-ray fluorescence holography, neutron holography, which are methods that can measure the three-dimensional (3D) atomic arrangement of the dopant. Among them, photoelectron holography can measure the atomic structure of each dopant depending on the chemical state. We have built photoelectron holography apparatuses at BL25SU in SPring-8. We also developed a software platform 3D-AIR-IMAGE for data processing, simulation of photoelectron holograms, and 3D atomic image reconstruction.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122889468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802894
T. Nakayama
In this paper, we explain recent advances in the understanding and control of Schottky barrier and interface defects at metal/semiconductor interfaces, by illustrating metal/Ge and metal/(SiC,GaN) interfaces.
{"title":"Physics of Gap-state Control at Metal/Semiconductor Junctions; Schottky Barrier and Interface Defects","authors":"T. Nakayama","doi":"10.23919/IWJT.2019.8802894","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802894","url":null,"abstract":"In this paper, we explain recent advances in the understanding and control of Schottky barrier and interface defects at metal/semiconductor interfaces, by illustrating metal/Ge and metal/(SiC,GaN) interfaces.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132934951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.23919/IWJT.2019.8802618
A. Quintero, P. Gergaud, J. Hartmann, V. Reboud, E. Cassan, P. Rodriguez
We have investigated the impact Pt or Co alloying have on Ni-based metallization in order to efficiently contact GeSn layers. In-situ X-ray diffraction (XRD), atomic force microscopy (AFM) and Sheet resistance (Rsh) measurements were performed. Solid-state reactions, surface morphology and electrical properties were studied, as a function of temperature annealing. Special attention was paid to differences depending on the alloying element.
{"title":"Effects of alloying elements (Pt or Co) on nickel-based contact technology for GeSn layers","authors":"A. Quintero, P. Gergaud, J. Hartmann, V. Reboud, E. Cassan, P. Rodriguez","doi":"10.23919/IWJT.2019.8802618","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802618","url":null,"abstract":"We have investigated the impact Pt or Co alloying have on Ni-based metallization in order to efficiently contact GeSn layers. In-situ X-ray diffraction (XRD), atomic force microscopy (AFM) and Sheet resistance (Rsh) measurements were performed. Solid-state reactions, surface morphology and electrical properties were studied, as a function of temperature annealing. Special attention was paid to differences depending on the alloying element.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124409239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/IWJT.2019.8802617
E. Chang, Yen-Ku Lin
GaN-based high electron mobility transistor (HEMT) is a promising candidate for high-frequency and high-power applications due to its outstanding material properties, such as high electric breakdown field and high peak electron drift velocity. A low contact resistance (Rc) contact is essential for the device performance including output power, power efficiency, frequency response and noise performances. To obtain low contact resistances, several studies using different metallization schemes have been demonstrated. A standard Ti/Al/Ni/Au metal stack is a conventional ohmic contact of GaN HEMTs. Ti reacts with AlGaN to form TiN, which results in the creation of nitrogen vacancies which act as donors in AlGaN layers. The resultant N-type doped AlGaN and the conductive TiN facilitate tunneling mechanism of carriers at the interface.We have demonstrated high-frequency performances for AlGaN/GaN HEMTs processed with ohmic recess technique. The contact resistances were as low as 0.25 •·mm after annealing. We also optimized the gate structure with larger gate head to enhance the OFF-state breakdown voltage for optimizing the power performance at Ka band. The device exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.59 A/mm, a peak extrinsic transconductance (gm.ext) of 480 mS/mm, a high current-gain cutoff frequency (fT)/ maximum frequency of oscillation (fMAX) of 71/123 GHz, and a minimum noise figure of 1.91 dB with an associated gain of 6.13 dB at 40 GHz. The device demonstrated a maximum output power density of 4.6 W/mm, with a power-added efficiency of 19.5 %, and a linear gain of 8.2 dB with a larger gate head biased at Vds = 20 V at 38 GHz.High-performance GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) using ohmic contact with N-type dopants and Al2O3 gate dielectric deposited by atomic layer deposition (ALD) for millimeter-wave power applications is demonstrated. An alloyed Si/Ge/Ti/Al/Ni/Au contacts was used to reduce the ohmic contact resistance over conventional Ti/Al/Ni/Au ohmic contacts. The improvement of the contact resistance is because of the enhanced N-type doped AlGaN by Si and Ge was added to further enhance the doping concentration of the ohmic contact regions. The MOSHEMT device fabricated exhibits IDS,max of 1.65 A/mm and high gm.ext of 653 mS/mm. The MOSHEMT device also demonstrates excellent RF performances including fT/fMAX = 183/191 GHz measured at Vds=5 V. The fMAX of the device was larger than 200GHz when Vds was biased at 20V.The Ti-based ohmic contacts commonly have a rough surface morphology and reduced edge acuity that affect accurate alignment of the gate electrode for downscaled GaN-based HEMTs. Therefore, a gold-free and Titanium-free Ta-based metal stack was utilized for ohmic contact. Low-resistance ohmic contacts formed by sidewall contacts with ohmic recess for GaN HEMTs were demonstrated. To develop a general and viable method for low c
{"title":"Ohmic Contacts with low contact resistance for GaN HEMTs","authors":"E. Chang, Yen-Ku Lin","doi":"10.23919/IWJT.2019.8802617","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802617","url":null,"abstract":"GaN-based high electron mobility transistor (HEMT) is a promising candidate for high-frequency and high-power applications due to its outstanding material properties, such as high electric breakdown field and high peak electron drift velocity. A low contact resistance (Rc) contact is essential for the device performance including output power, power efficiency, frequency response and noise performances. To obtain low contact resistances, several studies using different metallization schemes have been demonstrated. A standard Ti/Al/Ni/Au metal stack is a conventional ohmic contact of GaN HEMTs. Ti reacts with AlGaN to form TiN, which results in the creation of nitrogen vacancies which act as donors in AlGaN layers. The resultant N-type doped AlGaN and the conductive TiN facilitate tunneling mechanism of carriers at the interface.We have demonstrated high-frequency performances for AlGaN/GaN HEMTs processed with ohmic recess technique. The contact resistances were as low as 0.25 •·mm after annealing. We also optimized the gate structure with larger gate head to enhance the OFF-state breakdown voltage for optimizing the power performance at Ka band. The device exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.59 A/mm, a peak extrinsic transconductance (gm.ext) of 480 mS/mm, a high current-gain cutoff frequency (fT)/ maximum frequency of oscillation (fMAX) of 71/123 GHz, and a minimum noise figure of 1.91 dB with an associated gain of 6.13 dB at 40 GHz. The device demonstrated a maximum output power density of 4.6 W/mm, with a power-added efficiency of 19.5 %, and a linear gain of 8.2 dB with a larger gate head biased at Vds = 20 V at 38 GHz.High-performance GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) using ohmic contact with N-type dopants and Al2O3 gate dielectric deposited by atomic layer deposition (ALD) for millimeter-wave power applications is demonstrated. An alloyed Si/Ge/Ti/Al/Ni/Au contacts was used to reduce the ohmic contact resistance over conventional Ti/Al/Ni/Au ohmic contacts. The improvement of the contact resistance is because of the enhanced N-type doped AlGaN by Si and Ge was added to further enhance the doping concentration of the ohmic contact regions. The MOSHEMT device fabricated exhibits IDS,max of 1.65 A/mm and high gm.ext of 653 mS/mm. The MOSHEMT device also demonstrates excellent RF performances including fT/fMAX = 183/191 GHz measured at Vds=5 V. The fMAX of the device was larger than 200GHz when Vds was biased at 20V.The Ti-based ohmic contacts commonly have a rough surface morphology and reduced edge acuity that affect accurate alignment of the gate electrode for downscaled GaN-based HEMTs. Therefore, a gold-free and Titanium-free Ta-based metal stack was utilized for ohmic contact. Low-resistance ohmic contacts formed by sidewall contacts with ohmic recess for GaN HEMTs were demonstrated. To develop a general and viable method for low c","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133570861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/IWJT.2019.8802624
J. Borland, S. Chaung, T. Tseng, A. Joshi, B. Basol, Yao-Jen Lee, T. Kuroi, G. Goodman, Nadya Khapochkina, T. Buyuklimanli
For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.
{"title":"Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering","authors":"J. Borland, S. Chaung, T. Tseng, A. Joshi, B. Basol, Yao-Jen Lee, T. Kuroi, G. Goodman, Nadya Khapochkina, T. Buyuklimanli","doi":"10.23919/IWJT.2019.8802624","DOIUrl":"https://doi.org/10.23919/IWJT.2019.8802624","url":null,"abstract":"For undoped <1E14/cm 3 Silicon-Cz wafers, hole mobility (µ h ) is reported to be 480cm 2 /Vs while electron mobility (µ e ) is 3.5x higher at 1500cm 2 /Vs and in Germanium-Cz wafers µ h is 4x higher at 2000cm 2 /Vs and µ e is 3.5x higher at 4800cm 2 /Vs as shown in Fig. 1 [1] . When the doping level is increased to typical p-well and n-well doping levels of ~1E18/cm 3 , the mobility decreases in Si to µ h =150cm 2 /Vs and µ e =300cm 2 /Vs a decrease of 68% and 80% respectively while in Ge mobility decreases to µ h =400cm 2 /Vs and µ e =1000cm 2 /Vs a decrease of 80% for both but compared to Si, an increase in µ h by 2.7x and µ e by 3.3x.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115205209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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