This work develops a rigorous analytical framework to examine the scattering behavior and dynamic stress response of semi-elliptical notches in piezoelectric half-planes subjected to anti-plane shear (SH) waves. The framework unifies the treatment of cracks, circular holes, and notches within a consistent wave–defect interaction model, while explicitly incorporating piezoelectric coupling and nanoscale surface/interface effects. The analysis employs the complex function method in combination with the Helmholtz equation and wavefield superposition theory, resulting in an infinite system of equations that rigorously enforces continuity and boundary conditions. A systematic truncation scheme is then applied to ensure stable and convergent solutions. The results reveal that surface/interface effects play a crucial role in suppressing the dynamic stress concentration factor (DSCF), particularly under vertical SH-wave excitation, while sharper resonance peaks emerge at low modulus ratios and higher piezoelectric constants, such as PZT-5H and BaTiO₃. In the absence of piezoelectric coupling, the formulation seamlessly reduces to classical elasticity, ensuring strong theoretical consistency. Validation is achieved through recovery of benchmark solutions (semicircular notch and edge crack), graphical comparisons with prior results, and the rapid convergence of the truncated system, confirming the model’s accuracy and robustness. The findings hold significant implications for structural health monitoring, non-destructive evaluation, and the design of advanced piezoelectric composites, where accurate prediction of stress amplification and defect evolution is essential. Although the present study focuses on semi-elliptical notches in half-plane geometries under SH-wave loading, the approach can be readily extended to more general defect shapes and mixed-mode disturbances. The novelty of this work lies in capturing piezoelectric surface/interface effects within an exact analytical framework, thereby enhancing predictive capability for defect-induced stress concentrations and providing a reliable basis for the design and durability assessment of high-performance piezoelectric materials.
扫码关注我们
求助内容:
应助结果提醒方式:
