To extend the application of ultrasonic nondestructive testing to viscoelastic materials, we investigate the propagation behavior of shear horizontal (SH) waves in functionally graded viscoelastic (FGV) materials and piezoelectric semiconductor composite structures in this paper. Based on elastic dynamics theory, the governing equations are derived in terms of displacement, electric potential, and perturbed carrier concentration. Analytical solutions for viscoelastic and piezoelectric semiconductor layers are obtained using a power series method and a direct approach. The results indicate that the gradient variation of material parameters affects the phase velocity and attenuation of SH waves and that an appropriate bias electric field results in SH wave amplification. The influence of bias electric field on attenuation are close related to the order of the modes. In the first mode and second mode, the bias electric field reduces the attenuation of the SH wave and can amplify the wave when the dimensionless wavenumber is very small. In the third mode, the application of the same bias electric field affects attenuation differently across varying material parameter gradients, yet none induce gain in the SH wave.
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