This comprehensive study focuses on Gd3+ substituted Mn-Cd nanoferrites, represented by the chemical formula Mn0.3Cd0.7GdxFe2-xO4 (MCGF). The dopant ion used was Gd3+, with x values ranging from 0.000 to 0.025. We prepared the samples for this research and conducted an extensive analysis using XRD, FTIR, TEM, SEM, and SAED techniques. The XRD patterns confirmed the presence of a spinel structure. Notably, the average crystallite size determined from the XRD analysis was between 32 and 36 nm, which aligns with the results from the TEM analysis. Additionally, the lattice parameters increased with the substitution of the metal ion (Gd3+), clearly demonstrating the effect of doping on the structure of the material. The examination of the dielectric properties provided crucial insights: both the dielectric constant (ε’) and dielectric loss (ε") increased with temperature. This is linked to the enhanced sample polarization and suggests that higher temperatures promote dipole relaxation, resulting in an increased dielectric loss. Samples exhibiting significant dielectric losses are particularly valuable for electromagnetic interference shielding applications. We also explored the AC conductivity of the samples and analyzed the relationship between the conductivity and frequency for various doping levels. This investigation offers insights into the behavior of materials at different doping levels and temperatures. The discussion on how the AC conductivity increases with temperature and frequency is particularly intriguing, given the material behavior. Furthermore, we examined the frequency dependency of the real part Z’ and imaginary part Z’’ of the impedance and provided detailed plots. The Nyquist plots and observed relaxation phenomena are crucial for understanding the electrical characteristics of materials. Gas detectors, storage devices, and other devices that can be developed from these synthesized materials are important for modern technologies.
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