The high-performance optical receivers were fabricated by depositing an ultra-thin film (antimony trioxide, Sb₂O₃) on a porous Si (p-Si) substrate using the laser ablation method. The p-PSi layer was obtained by electrochemical etching, and the XRD results showed that it had a crystalline orientation with main diffraction peaks at 28.84°, 33.09°, and 69.39° corresponding to the (111), (200) and (400) planes of silicon wafers. AFM displayed a nanostructured surface with pyramid-shape hillocks and isolated Si-pillars (features favourable to quantum confinement), whereas PL measurements have confirmed an enhanced bandgap: 1.77 eV (in comparison with the bulk Si value 1.11 eV). In the Sb₂O₃ film, only the cubic senarmontite phase was identified, which also shows sharp XRD peaks suggesting high crystallinity. AFM and SEM observations exhibited a relatively rough surface with RMS = 17.96 nm, average grain size = 91.59 nm, and the agglomeration of the NPs (minimum-particle-size ≈ 27.83 nm). Characteristic Sb₂O₃ vibration modes were confirmed with FTIR, and the optical bandgap was measured to be 3.49 eV. The Ag/Sb₂O₃/PSi/p-Si/Ag heterojunction photodetector exhibited a remarkable optoelectronic performance. High peak responsivities of 0.34, 0.47, and 0.88 mA/W are achieved at the wavelength of 352 nm, 650 nm, and 800 nm, respectively; specific detectivity up to 1.26 × 10¹³Jones is obtained; carrier lifetime was measured to be the longest time (1.92 µs) among reported Schottky based RSD device platforms using the C–V technique signaled an abrupt junction that suggest their broad debut for broadband detection purposes.
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