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Tailoring lithium intercalation pathway in 2D van der Waals heterostructure for high-speed edge-contacted floating-gate transistor and artificial synapses 在二维范德瓦尔斯异质结构中定制锂插层途径,实现高速边缘接触浮动栅晶体管和人工突触
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-07 DOI: 10.1002/inf2.12599
Jun Yu, Jiawei Fu, Hongcheng Ruan, Han Wang, Yimeng Yu, Jinpeng Wang, Yuhui He, Jinsong Wu, Fuwei Zhuge, Ying Ma, Tianyou Zhai
Local phase transition in transition metal dichalcogenides (TMDCs) by lithium intercalation enables the fabrication of high-quality contact interfaces in two-dimensional (2D) electronic devices. However, controlling the intercalation of lithium is hitherto challenging in vertically stacked van der Waals heterostructures (vdWHs) due to the random diffusion of lithium ions in the hetero-interface, which hinders their application for contact engineering of 2D vdWHs devices. Herein, a strategy to restrict the lithium intercalation pathway in vdWHs is developed by using surface-permeation assisted intercalation while sealing all edges, based on which a high-performance edge-contact MoS2 vdWHs floating-gate transistor is demonstrated. Our method avoids intercalation from edges that are prone to be random but intentionally promotes lithium intercalation from the top surface. The derived MoS2 floating-gate transistor exhibits improved interface quality and significantly reduced subthreshold swing (SS) from >600 to 100 mV dec–1. In addition, ultrafast program/erase performance together with well-distinguished 32 memory states are demonstrated, making it a promising candidate for low-power artificial synapses. The study on controlling the lithium intercalation pathways in 2D vdWHs offers a viable route toward high-performance 2D electronics for memory and neuromorphic computing purposes.
通过锂插层实现过渡金属二卤化物(TMDCs)的局部相变,可以在二维(2D)电子器件中制造出高质量的接触界面。然而,由于锂离子在异质界面中的随机扩散,在垂直堆叠的范德华异质结构(vdWHs)中控制锂的插层具有挑战性,这阻碍了它们在二维范德华异质结构器件接触工程中的应用。在此,我们开发了一种限制锂在 vdWHs 中插层途径的策略,即在密封所有边缘的同时使用表面渗透辅助插层,并在此基础上展示了一种高性能边缘接触 MoS2 vdWHs 浮栅晶体管。我们的方法避免了容易出现随机性的边缘插层,但有意促进了顶面的锂插层。衍生出的 MoS2 浮栅晶体管改善了界面质量,并显著降低了阈下摆幅(SS),从 600 mV dec-1 降至 100 mV dec-1。此外,该晶体管还具有超快的编程/擦除性能和32种不同的记忆状态,因此有望成为低功耗人工突触的候选器件。对二维 vdWHs 中锂插层途径的控制研究为实现用于存储器和神经形态计算的高性能二维电子器件提供了一条可行的途径。
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引用次数: 0
Aqueous decoupling batteries: Exploring the role of functional ion-exchange membrane 水性去耦电池:探索功能性离子交换膜的作用
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-05 DOI: 10.1002/inf2.12601
Shuyue Li, Lujing Wang, Xiaoman Li, Heng Jiang, Fei Du
The relentless pursuit of sustainable and safe energy storage technologies has driven a departure from conventional lithium-based batteries toward other relevant alternatives. Among these, aqueous batteries have emerged as a promising candidate due to their inherent properties of being cost-effective, safe, environmentally friendly, and scalable. However, traditional aqueous systems have faced limitations stemming from water's narrow electrochemical stability window (~1.23 V), severely constraining their energy density and viability in high-demand applications. Recent advancements in decoupling aqueous batteries offer a novel solution to overcome this challenge by separating the anolyte and catholyte, thereby expanding the theoretical operational voltage window to over 3 V. One key component of this innovative system is the ion-selective membrane (ISM), acting as a barrier to prevent undesired crossover between electrolytes. This review provides a comprehensive overview of recent advancements in decoupling aqueous batteries, emphasizing the application of various types of ISMs. Moreover, we summarize different specially designed ISMs and their performance attributes. By addressing the current challenges ISMs face, the review outlines potential pathways for future enhancement and development of aqueous decoupling batteries.
对可持续和安全储能技术的不懈追求,促使人们从传统的锂电池转向其他相关替代品。其中,水性电池因其固有的成本效益高、安全、环保和可扩展等特性,已成为一种前景广阔的候选方案。然而,由于水的电化学稳定性窗口较窄(约 1.23 V),传统的水性系统面临着种种限制,严重制约了其能量密度和在高需求应用中的可行性。最近在解耦水电池方面取得的进展为克服这一挑战提供了一种新颖的解决方案,即分离阳离子和阴离子,从而将理论工作电压窗口扩大到 3 V 以上。这种创新系统的一个关键部件是离子选择膜(ISM),它是防止电解质之间发生意外交叉的屏障。本综述全面概述了去耦水性电池的最新进展,强调了各种类型 ISM 的应用。此外,我们还总结了各种专门设计的 ISM 及其性能属性。通过探讨 ISM 当前面临的挑战,综述概述了水性解耦电池未来改进和发展的潜在途径。
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引用次数: 0
X-ray-ultraviolet–visible-near-infrared photoresponses realized in a lead-free hybrid perovskite ferroelectric through light-induced ferro-pyro-phototronic effect 通过光诱导铁-吡罗-光电效应在无铅混合包晶铁电体中实现 X 射线-紫外-可见-近红外光响应
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-01 DOI: 10.1002/inf2.12602
Dongying Fu, Yanli Ma, Shufang Wu, Lin Pan, Qi Wang, Ruifang Zhao, Xian-Ming Zhang, Junhua Luo
Due to the built-in electric field induced by spontaneous polarization in hybrid perovskite (HP) ferroelectrics, the devices based on them exhibit excellent performance in self-powered photodetection. However, most of the self-powered photodetector are made of lead-based HP ferroelectrics and have a relatively narrow photoresponse waveband. Although lead-free HPs solve the problem of lead toxicity, their optoelectronic performance is inferior to that of lead-based HPs and photoresponse waveband is limited by its optical band gap, which hinders their further application. To solve this problem, herein, a lead-free HP ferroelectric (HDA)BiI5 (HDA is hexane-1,6-diammonium) with large spontaneous polarization shows an enhanced photocurrent and achieves x-ray-ultraviolet–visible-near-infrared (x-ray-UV–Vis–NIR) photoresponse through the ferro-pyro-phototronic (FPP) effect. The ferroelectric, pyroelectric, and photovoltaic characteristics coupled together in a single-phase (HDA)BiI5 ferroelectric is an effective way to improve the performance of the devices. What is particularly attractive is that the FPP effect not only improves the optoelectronic performance of (HDA)BiI5, but also achieves broadband photoresponses beyond its optical absorption range. Especially, the current boosting with an exceptional contrast of ~1100% and 2400% under 520 and 637 nm, respectively, which is associated with FPP effect. Meanwhile, single crystal self-powered photodetector based on (HDA)BiI5 also exhibit significant FPP effects even under high-energy x-ray, which owns an outstanding sensitivity of 170.7 μC Gy−1 cm−2 and a lower detection limit of 266 nGy s−1 at 0 V bias. Therefore, it is of great significance to study the coupling of multiple physical effects and improve device performance based on lead-free HP ferroelectrics.
由于混合包晶石(HP)铁电体中自发极化诱导的内置电场,基于它们的器件在自供电光电探测方面表现出卓越的性能。然而,大多数自供电光电探测器都是由铅基 HP 铁电材料制成的,光响应波段相对较窄。虽然无铅 HP 解决了铅毒性问题,但其光电性能不如铅基 HP,光响应波段受限于其光带隙,这阻碍了其进一步应用。为了解决这一问题,本文提出了一种具有大自发极化的无铅 HP 铁电 (HDA)BiI5(HDA 为己烷-1,6-二铵),这种 HP 具有增强的光电流,并通过铁-热释光(FPP)效应实现了 x 射线-紫外-可见-近红外(x-ray-UV-Vis-NIR)光响应。在单相(HDA)BiI5 铁电中耦合铁电、热释电和光电特性是提高器件性能的有效方法。特别吸引人的是,FPP 效应不仅提高了 (HDA)BiI5 的光电性能,还实现了超出其光学吸收范围的宽带光响应。特别是在 520 纳米和 637 纳米波长下,电流提升的对比度分别达到了约 1100% 和 2400%,这与 FPP 效应有关。同时,基于(HDA)BiI5 的单晶自供电光电探测器即使在高能 X 射线下也表现出显著的 FPP 效应,其灵敏度高达 170.7 μC Gy-1 cm-2,在 0 V 偏置下的检测下限为 266 nGy s-1。因此,研究多种物理效应的耦合,提高基于无铅 HP 铁电的器件性能具有重要意义。
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引用次数: 0
650 ps SET speed in Ge2Sb2Te5 phase change memory induced by TiO2 dielectric crystal plane TiO2 介电晶面诱导 Ge2Sb2Te5 相变存储器中 650 ps 的 SET 速度
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-07-01 DOI: 10.1002/inf2.12598
Rui Zhe Zhao, Ke Gao, Rong Jiang Zhu, Zhuo Ran Zhang, Qiang He, Ming Xu, Nian Nian Yu, Hao Tong, Xiang Shui Miao
Crystallization speed of phase change material is one of the main obstacles for the application of phase change memory (PCM) as storage class memory in computing systems, which requires the combination of nonvolatility with ultra-fast operation speed in nanoseconds. Here, we propose a novel approach to speed up crystallization process of the only commercial phase change chalcogenide Ge2Sb2Te5 (GST). By employing TiO2 as the dielectric layer in phase change device, operation speed of 650 ps has been achieved, which is the fastest among existing representative PCM, and is comparable to the programing speed of commercial dynamic random access memory (DRAM). Because of its octahedral atomic configuration, TiO2 can provide nucleation interfaces for GST, thus facilitating the crystal growth at the determinate interface area. Ti–O–Ti–O four-fold rings on the (110) plane of tetragonal TiO2 is critical for the fast-atomic rearrangement in the amorphous matrix of GST that enables ultra-fast operation speed. The significant improvement of operation speed in PCM through incorporating standard dielectric material TiO2 in DRAM paves the way for the application of phase change memory in high performance cache-type data storage.
相变材料的结晶速度是相变存储器(PCM)作为存储类存储器应用于计算系统的主要障碍之一,因为计算系统需要将非挥发性与纳秒级的超快运行速度相结合。在此,我们提出了一种新方法来加快唯一的商用相变钙钛矿 Ge2Sb2Te5 (GST) 的结晶过程。通过在相变器件中使用 TiO2 作为介电层,实现了 650 ps 的运行速度,这是现有代表性 PCM 中最快的,与商用动态随机存取存储器(DRAM)的编程速度相当。由于其八面体原子构型,TiO2 可为 GST 提供成核界面,从而促进晶体在确定的界面区域生长。四角形二氧化钛 (110) 面上的 Ti-O-Ti-O 四折环对于 GST 非晶基质中的快速原子重排至关重要,从而实现了超快的运行速度。通过在 DRAM 中加入标准介电材料 TiO2,PCM 的运行速度得到了显著提高,这为相变存储器在高性能缓存型数据存储中的应用铺平了道路。
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引用次数: 0
Flexible perovskite photodetector with room-temperature self-healing capability without external trigger 无需外部触发即可实现室温自愈的柔性过氧化物光电探测器
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-06-28 DOI: 10.1002/inf2.12594
Guoyi Li, Shenghong Li, Jahangeer Ahmed, Wei Tian, Liang Li
Flexible perovskite photodetectors (FPDs) are promising for novel wearable devices in bionics, robotics and health care. However, their performance degradation and instability during operations remain a grand challenge. Superior flexibility and spontaneous functional repair of devices without the need for any external drive or intervention are ideal goals for FPDs. Herein, by using phenyl disulfide instead of alkyl disulfide as a crosslinking agent, disulfide bonds with lower bond energy are introduced, thus endowing the polyurethane network (SCPU) with the ability of self-healing at room temperature. SCPU is filled to the grain boundary of perovskite film, which not only improves the crystal quality of perovskite and mechanical stability of FPD but also enables FPD to self-heal at room temperature. As a result, the as-prepared FPD exhibits a superior responsivity of 0.4 A W−1, a high specific detectivity of 2.5 × 1011 Jones and 2 μs fast response time in a self-powered mode. More importantly, the FPD still retained 91% of the initial photo responsivity after 9000 times of bending upon cyclic healing. This polymer doping strategy provides an effective solution for stable operation and room-temperature self-healing for FPDs.
柔性过氧化物光电探测器(FPD)在仿生学、机器人学和医疗保健领域的新型可穿戴设备中大有可为。然而,它们在运行过程中的性能退化和不稳定性仍然是一个巨大的挑战。无需任何外部驱动或干预即可实现设备的卓越灵活性和自发功能修复是 FPD 的理想目标。在这里,通过使用苯基二硫化物而不是烷基二硫化物作为交联剂,引入了键能较低的二硫键,从而使聚氨酯网络(SCPU)在室温下具有自修复能力。将 SCPU 填充到过氧化物薄膜的晶界,不仅能提高过氧化物的晶体质量和 FPD 的机械稳定性,还能使 FPD 在室温下自愈合。因此,制备的 FPD 在自供电模式下具有 0.4 A W-1 的超高响应度、2.5 × 1011 Jones 的高比检测度和 2 μs 的快速响应时间。更重要的是,FPD 在经过 9000 次弯曲循环愈合后,仍保留了 91% 的初始光响应率。这种聚合物掺杂策略为 FPD 的稳定运行和室温自愈提供了有效的解决方案。
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引用次数: 0
High-sensitive and fast MXene/silicon photodetector for single-pixel X-ray imaging 用于单像素 X 射线成像的高灵敏度、快速 MXene/硅光电探测器
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-06-26 DOI: 10.1002/inf2.12596
Yance Chen, Yue Dai, Srikrishna Chanakya Bodepudi, Xinyu Liu, Yuan Ma, Shiyu Xing, Dawei Di, Feng Tian, Xin Ming, Yingjun Liu, Kai Pang, Fei Xue, Yunyan Zhang, Zexin Yu, Yaping Dan, Oleksiy V. Penkov, Yishu Zhang, Dianyu Qi, Wenzhang Fang, Yang Xu, Chao Gao
The demand for high-performance X-ray detectors leads to material innovation for efficient photoelectric conversion and carrier transfer. However, current X-ray detectors are often susceptible to chemical and irradiation instability, complex fabrication processes, hazardous components, and difficult compatibility. Here, we investigate a two-dimensional (2D) material with a relatively low atomic number, Ti3C2Tx MXenes, and single crystal silicon for X-ray detection and single-pixel imaging (SPI). We fabricate a Ti3C2Tx MXene/Si X-ray detector demonstrating remarkable optoelectronic performance. This detector exhibits a sensitivity of 1.2 × 107 μC Gyair−1 cm−2, a fast response speed with a rise time of 31 μs, and an incredibly low detection limit of 2.85 nGyair s−1. These superior performances are attributed to the unique charge coupling behavior under X-ray irradiation via intrinsic polaron formation. The device remains stable even after 50 continuous hours of high-dose X-ray irradiation. Our device fabrication process is compatible with silicon-based semiconductor technology. Our work suggests new directions for eco-friendly X-ray detectors and low-radiation imaging system.
对高性能 X 射线探测器的需求推动了用于高效光电转换和载流子传输的材料创新。然而,目前的 X 射线探测器往往容易受到化学和辐照不稳定性、复杂的制造工艺、有害成分和难以兼容等问题的影响。在此,我们研究了一种原子序数相对较低的二维(2D)材料 Ti3C2Tx MXenes 和单晶硅在 X 射线探测和单像素成像(SPI)中的应用。我们制造出的 Ti3C2Tx MXene/Si X 射线探测器显示出卓越的光电性能。该探测器的灵敏度为 1.2 × 107 μC Gyair-1 cm-2,响应速度快,上升时间为 31 μs,探测极限低至 2.85 nGyair s-1。这些优异的性能归功于在 X 射线照射下通过本征极子形成的独特电荷耦合行为。即使在连续 50 小时的高剂量 X 射线辐照后,该器件仍能保持稳定。我们的器件制造工艺与硅基半导体技术兼容。我们的工作为环保型 X 射线探测器和低辐射成像系统指明了新方向。
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引用次数: 0
Surface chemistry of electrode materials toward improving electrolyte-wettability: A method review 改善电解质润湿性的电极材料表面化学:方法综述
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-06-19 DOI: 10.1002/inf2.12597
Lei Zhao, Yuanyou Peng, Peiyao Dou, Yuan Li, Tianqi He, Fen Ran
The electrolyte-wettability at electrode material/electrolyte interface is a critical factor that governs the fundamental mechanisms of electrochemical reaction efficiency and kinetics of electrode materials in practical electrochemical energy storage. Therefore, the design and construction of electrode material surfaces with improved electrolyte-wettability has been demonstrated to be important to optimize electrochemical energy storage performance of electrode material. Here, we comprehensively summarize advanced strategies and key progresses in surface chemical modification for enhancing electrolyte-wettability of electrode materials, including polar atom doping by post treatment, introducing functional groups, grafting molecular brushes, and surface coating by in situ reaction. Specifically, the basic principles, characteristics, and challenges of these surface chemical strategies for improving electrolyte-wettability of electrode materials are discussed in detail. Finally, the potential research directions regarding the surface chemical strategies and advanced characterization techniques for electrolyte-wettability in the future are provided. This review not only insights into the surface chemical strategies for improving electrolyte-wettability of electrode materials, but also provides strategic guidance for the electrolyte-wettability modification and optimization of electrode materials in pursuing high-performance electrochemical energy storage devices.
在实际电化学储能中,电极材料/电解质界面的电解质润湿性是制约电极材料电化学反应效率和动力学基本机制的关键因素。因此,设计和构建具有更佳电解质润湿性的电极材料表面对于优化电极材料的电化学储能性能具有重要意义。在此,我们全面总结了提高电极材料电解液润湿性的表面化学修饰的先进策略和主要进展,包括后处理极性原子掺杂、引入官能团、接枝分子刷和原位反应表面涂层等。具体而言,详细讨论了这些改善电极材料电解质润湿性的表面化学策略的基本原理、特点和挑战。最后,还提供了未来有关电解质润湿性的表面化学策略和先进表征技术的潜在研究方向。本综述不仅深入探讨了改善电极材料电解质润湿性的表面化学策略,还为追求高性能电化学储能装置的电解质润湿性改性和电极材料优化提供了战略指导。
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引用次数: 0
High-performance 110 kVp hard x-ray detector based on all-crystalline-surface passivated perovskite single crystals 基于全晶表面钝化包晶单晶的高性能 110 kVp 硬 X 射线探测器
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-06-18 DOI: 10.1002/inf2.12560
Juyoung Ko, Beomjun Park, Jangwon Byun, Sandeep Pandey, Ajin Jo, Joo-Hong Lee, Wonho Lee, Jin-Wook Lee, Nam-Gyu Park, Man-Jong Lee

Halide perovskite single crystals (SCs) have attracted much attention for their application in high-performance x-ray detectors owing to their desirable properties, including low defect density, high mobility–lifetime product (μτ), and long carrier diffusion length. However, suppressing the inherent defects in perovskites and overcoming the ion migration primarily caused by these defects remains a challenge. This study proposes a facile process for dipping Cs0.05FA0.9MA0.05PbI3 SCs synthesized by a solution-based inverse temperature crystallization method into a 2-phenylethylammonium iodide (PEAI) solution to reduce the number of defects, inhibit ion migration, and increase x-ray sensitivity. Compared to conventional spin coating, this simple dipping process forms a two-dimensional PEA2PbI4 layer on all SC surfaces without further treatment, effectively passivating all surfaces of the inherently defective SCs and minimizing ion migration. As a result, the PEAI-treated perovskite SC-based x-ray detector achieves a record x-ray sensitivity of 1.3 × 105 μC Gyair−1 cm−2 with a bias voltage of 30 V at realistic clinical dose rates of 1–5 mGy s−1 (peak potential of 110 kVp), which is 6 times more sensitive than an untreated SC-based detector and 3 orders of magnitude more sensitive than a commercial α-Se-based detector. Furthermore, the PEAI-treated-perovskite SC-based x-ray detector exhibits a low detection limit (73 nGy s−1), improved x-ray response, and clear x-ray images by a scanning method, highlighting the effectiveness of the PEAI dipping approach for fabricating next-generation x-ray detectors.

卤化物过氧化物单晶体(SC)因其理想的特性,包括低缺陷密度、高迁移率-寿命乘积(μτ)和长载流子扩散长度,在高性能 X 射线探测器中的应用备受关注。然而,抑制过氧化物晶中的固有缺陷并克服主要由这些缺陷引起的离子迁移仍然是一项挑战。本研究提出了一种简便的工艺,将基于溶液逆温结晶法合成的 Cs0.05FA0.9MA0.05PbI3 SCs 浸入 2-苯基乙基碘化铵(PEAI)溶液中,以减少缺陷数量、抑制离子迁移并提高 X 射线灵敏度。与传统的旋涂法相比,这种简单的浸渍工艺无需进一步处理即可在所有 SC 表面形成二维 PEA2PbI4 层,从而有效地钝化了存在固有缺陷的 SC 的所有表面,并最大限度地减少了离子迁移。因此,在 1-5 mGy s-1 的实际临床剂量率(峰值电位为 110 kVp)条件下,经过 PEAI 处理的透视晶 SC 基 X 射线探测器在 30 V 偏置电压下的 X 射线灵敏度达到了创纪录的 1.3 × 105 μC Gyair-1 cm-2,是未经处理的 SC 基探测器的 6 倍,比商用 α-Se 基探测器的灵敏度高出 3 个数量级。此外,经 PEAI 处理的透辉石 SC 型 X 射线探测器的探测极限很低(73 nGy s-1),X 射线响应得到了改善,并能通过扫描方法获得清晰的 X 射线图像,这凸显了 PEAI 浸渍方法在制造下一代 X 射线探测器方面的有效性。
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引用次数: 0
Simultaneous resistance switching and rectifying effects in a single hybrid perovskite 单一混合过氧化物中的同步电阻开关和整流效应
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-06-17 DOI: 10.1002/inf2.12562
Xuefen Song, Junran Zhang, Yuchi Qian, Zhongjing Xia, Jinlian Chen, Hao Yin, Jing Liu, Linbo Feng, Tianyu Liu, Zihong Zhu, Yuyang Hua, You Liu, Jiaxiao Yuan, Feixiang Ge, Dawei Zhou, Mubai Li, Yang Hang, Fangfang Wang, Tianshi Qin, Lin Wang
Halide perovskites with naturally coupled electron-ion dynamics hold great potential for nonvolatile memory applications. Self-rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self-rectifying memristor firstly achieved in a single perovskite (NHCINH3)3PbI5 (abbreviated as (IFA)3PbI5), which is sandwiched by Ag and ITO electrodes as the simplest cell in a crossbar array device configuration. The iodide ions of (IFA)3PbI5 can be easily activated, of which the migration in the bulk contributes to the resistance hysteresis and the reaction with Ag at the interface contributes to the spontaneous formation of AgI. The perfect combination of n-type AgI and p-type (IFA)3PbI5 gives rise to the rectification function like a p–n diode. Such a self-rectifying memristor exhibits the record-low set power consumption and voltage. This work emphasizes that the multifunction of ions in perovskites can simplify the fabrication procedure, decrease the programming power, and increase the integration density of future memory devices.
具有自然耦合电子-离子动力学的卤化物过氧化物在非易失性存储器应用方面具有巨大潜力。自整流忆阻器可以避免潜入电流并简化器件配置,因此前景广阔。在此,我们首次报道了一种在单一包晶石 (NHCINH3)3PbI5 (简称 (IFA)3PbI5)中实现的自整流忆阻器,这种忆阻器被 Ag 和 ITO 电极夹在中间,是交叉棒阵列器件配置中最简单的单元。(IFA)3PbI5 中的碘离子很容易被激活,其中在体中的迁移促成了电阻滞后,而在界面上与 Ag 的反应则促成了 AgI 的自发形成。n 型 AgI 和 p 型 (IFA)3PbI5 的完美结合产生了类似 p-n 二极管的整流功能。这种自整流忆阻器的设定功耗和电压都达到了创纪录的低水平。这项研究强调,过氧化物中离子的多功能性可以简化未来存储器件的制造程序、降低编程功耗并提高集成密度。
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引用次数: 0
Revealing processing stability landscape of organic solar cells with automated research platforms and machine learning 利用自动化研究平台和机器学习揭示有机太阳能电池的加工稳定性状况
IF 22.7 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-06-14 DOI: 10.1002/inf2.12554
Xiaoyan Du, Larry Lüer, Thomas Heumueller, Andrej Classen, Chao Liu, Christian Berger, Jerrit Wagner, Vincent M. Le Corre, Jiamin Cao, Zuo Xiao, Liming Ding, Karen Forberich, Ning Li, Jens Hauch, Christoph J. Brabec

We use an automated research platform combined with machine learning to assess and understand the resilience against air and light during production of organic photovoltaic (OPV) devices from over 40 donor and acceptor combinations. The standardized protocol and high reproducibility of the platform results in a dataset of high variety and veracity to deploy machine learning models to encounter links between stability and chemical, energetic, and morphological structure. We find that the strongest predictor for air/light resilience during production is the effective gap Eg,eff which points to singlet oxygen rather than the superoxide anion being the dominant agent in degradation under processing conditions. A similarly good prediction of air/light resilience can also be achieved by considering only features from chemical structure, that is, information which is available prior to any experimentation.

我们使用自动化研究平台,结合机器学习,评估和了解 40 多种供体和受体组合的有机光伏(OPV)器件在生产过程中对空气和光线的适应能力。该平台的标准化规程和高度可重复性产生了一个种类繁多且真实可信的数据集,用于部署机器学习模型,以了解稳定性与化学、能量和形态结构之间的联系。我们发现,在生产过程中,有效间隙 Eg,eff 是预测空气/光适应性的最强指标,它表明在加工条件下降解的主要因素是单线态氧而不是超氧阴离子。如果只考虑化学结构的特征,也就是在任何实验之前就可以获得的信息,也可以对耐空气/耐光性进行类似的良好预测。
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引用次数: 0
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