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Aqueous zinc (Zn) ion batteries (AZIBs) are regarded as one of the promising candidates for next-generation electrochemical energy storage systems due to their low cost, high safety, and environmental friendliness. However, the commercialization of AZIBs has been severely restricted by the growth of dendrite at the Zn metal anode. Tailoring the planar-structured Zn anodes into three-dimensional (3D) structures has proven to be an effective way to modulate the plating/stripping behavior of Zn anodes, resulting in the suppression of dendrite formation. This review provides an up-to-date review of 3D structured Zn metal anodes, including working principles, design, current status, and future prospects. We aim to give the readers a comprehensive understanding of 3D-structured Zn anodes and their effective usage to enhance AZIB performance.

The cover image focuses on neuronal circuit motif with specialized excitatory–inhibitory connectivity pattern. The neuronal circuit is an advanced functional unit of the brain beyond neurons and synapses. Neurons do not function in isolation and are linked to ensembles or circuit motifs that process specific types of information, enables multidimensional signal processing in the information flow of the brain. The authors demonstrate a core processor that can be employed to construct commonly used neuronal circuits and further perform bio-realistic neuromorphic computing. Exploring the working principle, physical configuration, scalable design, and extensive signal-processing capabilities of core processing neuron is crucial for advancing hardware development for brain-inspired integrated neuromorphic systems.

A pulse-driven electrochemical synaptic transistor for supersensitive and ultrafast biosensor is proposed.

Solar-blind ultraviolet (UV) photodetectors based on p-organic/n-Ga₂O₃ hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar-blind photodetector based on p-type poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT)/n-type amorphous Ga₂O₃ (a-Ga₂O₃) is fabricated and investigated, which can work in the phototransistor mode coupling with self-powered mode. With the introduction of PCDTBT, the dark current of such the a-Ga₂O₃-based photodetector is decreased to 0.48 pA. Meanwhile, the photoresponse parameters of the a-Ga₂O₃-based photodetector in the phototransistor mode to solar-blind UV light are further increased, that is, responsivity (R), photo-detectivity (D*), and external quantum efficiency (EQE) enhanced to 187 A W^–1, 1.3 × 10¹⁶ Jones and 9.1 × 10⁴ % under the weak light intensity of 11 μW cm^–2, respectively. Thanks to the formation of the built-in field in the p-PCDTBT/n-Ga₂O₃ type-II heterojunction, the PCDTBT/Ga₂O₃ multifunctional photodetector shows self-powered behavior. The responsivity of p-PCDTBT/n-Ga₂O₃ multifunctional photodetector is 57.5 mA W^–1 at zero bias. Such multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga₂O₃ heterojunction-based photodetectors.

Infrared (IR) detection is vital for various military and civilian applications. Recent research has highlighted the potential of two-dimensional (2D) topological semimetals in IR detection due to their distinctive advantages, including van der Waals (vdW) stacking, gapless electronic structure, and Van Hove singularities in the electronic density of states. However, challenges such as large-scale patterning, poor photoresponsivity, and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing. Here, we demonstrate the in situ fabrication of PtSe₂/Ge Schottky junction by directly depositing 2D PtSe₂ films with a vertical layer structure on a Ge substrate with an ultrathin AlO_x layer. Due to high quality junction, the photodetector features a broadband response of up to 4.6 μm, along with a high specific detectivity of ~10¹² Jones, and operates with remarkable stability in ambient conditions as well. Moreover, the highly integrated device arrays based on PtSe₂/AlO_x/Ge Schottky junction showcases excellent Mid-IR (MIR) imaging capability at room temperature. These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.

The discovery of semiconductor has witnessed remarkable strides toward high performance of photodetectors attributed to its excellent carrier properties. However, semimetal, owning to the high carrier concentration and low carrier mobility compared to those of semiconductor, is generally considered unsuitable for photodetection. Herein, we demonstrate an outstanding photodetection in a layered semimetal titanium diselenide (TiSe₂) in Bose–Einstein condensation (BEC) state. High sensitivity of semimetal photodetector is realized in the range of visible, infrared and terahertz bands. The noise equivalent power (NEP) has threefold improvement at the visible and infrared wavebands, and significant decrease by one order of magnitude in the terahertz frequencies via BEC phenomenon, attributed to the electrical parameter variation after condensation. The best NEP value in the terahertz frequency is comparable to that of commercial Si photodetector. Our results show another recipe to fabricate high performance of photodetection via semimetal except for semiconductor and pave the way to exploit macroscopic quantum phenomena for optoelectronics.

The crystal-structure symmetry in real space can be inherited in the reciprocal space, making high-symmetry materials the top candidates for thermoelectrics due to their potential for significant electronic band degeneracy. A practical indicator that can quantitatively describe structural changes would help facilitate the advanced thermoelectric material design. In face-centered cubic structures, the spatial environment of the same crystallographic plane family is isotropic, such that the distances between the close-packed layers can be derived from the atomic distances within the layers. Inspired by this, the relationship between inter- and intra-layer geometric information can be used to compare crystal structures with their desired cubic symmetry. The close-packed layer spacing was found to be a practical guideline of crystal structure symmetry in IV-VI chalcogenides and I-V-VI₂ ternary semiconductors, both of which are historically important thermoelectrics. The continuous structural evolution toward high symmetry can be described by the layer spacing when temperature or/and composition change, which is demonstrated by a series of pristine and alloyed thermoelectric materials in this work. The layer-spacing-based guideline provides a quantitative pathway for manipulating crystal structures to improve the electrical and thermal properties of thermoelectric materials.

Advanced atomic tracking techniques play a critical role in characterizing structural evolution, elucidating fundamental mechanisms of exotic phenomena and tailoring delicate properties. Thermally driven structural modulation in 2D crystals, such as the charge density wave (CDW), often leads to intriguing quantum properties, making them a valuable platform for exploring fundamental physics and potential device applications. However, despite their significance, experimental studies addressing atomic tracking of thermally-driven structural evolution in 2D crystals have been limited. Herein, we utilize high-accuracy variable-temperature atomic tracking measurements with scanning tunneling microscopy (STM) to directly observe a series of structural transitions in a model 2D crystal, namely NbSe₂. With the atomic tracking technique, we confirm the existence of the universal thermally-driven CDW transition hysteresis between the heating and cooling cycles. This transition hysteresis, characterized by a constant temperature offset, represents a new phenomenon of structural evolution. Our findings provide a feasible method to track CDW transitions at the atomic scale in 2D crystals, significantly contributing to a better understanding and the potential modulation of these materials' functions in nanodevices.

Intelligent applications, with tactile sensors at their core, represent significant advancement in the field of artificial intelligence. However, achieving perception abilities in tactile sensors that match or exceed human skin remains a formidable challenge. Consequently, the design and implementation of hierarchical structural materials are considered the optimal solution to this challenge. In contrast to conventional methods, such as complicated lithography and three-dimensional printing, the cost-effective and scalable nature of advanced solution-synthesis methods makes them ideal for preparing diverse tactile sensors with hierarchical structural materials. However, the process and applicability of advanced solution synthesis methods have yet to form a seamless system. Accordingly, the development and intellectualization of tactile sensors based on advanced solution synthesis methods are still in their early stages, and require a comprehensive and systematic review to usher in progress. This study delves into the advantages and disadvantages of various advanced solution synthesis methods, providing detailed insights. Furthermore, the positive effects of hierarchical structural materials constructed using these methods in tactile sensors and their intelligent applications are also discussed in depth. Finally, the challenges and future opportunities faced by this emerging field are summarized.