Infomat最新文献

Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon-based readout integrated circuits (ROICs) offer a promising solution for the next-generation short-wave infrared (SWIR) imaging technology. Despite their potential, large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non-passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate (100) facets of halide-capped large-size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm⁻² at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W⁻¹) and a specific detectivity of 2.5 × 10¹² Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high-resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination.

Narrowband photodetectors conventionally rely on optical structure design or bandpass filters to achieve the narrowband regime. Recently, a strategy for filterless narrowband photoresponse based on the charge collection narrowing (CCN) mechanism was reported. However, the CCN strategy requires an electrically and optically “thick” photoactive layer, which poses challenges in controlling the narrowband photoresponse. Here we propose a novel strategy for constructing narrowband photodetectors by leveraging the inherent ion migration in perovskites, which we term “band modulation narrowing” (BMN). By manipulating the ion migration with external stimuli such as illumination, temperature, and bias voltage, we can regulate in situ the energy-band structure of perovskite photodetectors (PPDs) and hence their spectral response. Combining the Fermi energy levels obtained by the Kelvin probe force microscopy, the internal potential profiles from solar cell capacitance simulator simulation, and the anion accumulation revealed by the transient ion-drift technique, we discover two critical mechanisms behind our BMN strategy: the extension of an optically active but electronically dead region proximal to the top electrode and the down-bending energy bands near the electron transport layer. Our findings offer a case for harnessing the often-annoying ion migration for developing advanced narrowband PPDs.

Electrohydrodynamic (EHD) printing technique, which deposits micro/nanostructures through high electric force, has recently attracted significant research interest owing to their fascinating characteristics in high resolution (<1 μm), wide material applicability (ink viscosity 1–10 000 cps), tunable printing modes (electrospray, electrospinning, and EHD jet printing), and compatibility with flexible/wearable applications. Since the laboratory level of the EHD printed electronics' resolution and efficiency is gradually approaching the commercial application level, an urgent need for developing EHD technique from laboratory into industrialization have been put forward. Herein, we first discuss the EHD printing technique, including the ink design, droplet formation, and key technologies for promoting printing efficiency/accuracy. Then we summarize the recent progress of EHD printing in fabrication of displays, organic field-effect transistors (OFETs), transparent electrodes, and sensors and actuators. Finally, a brief summary and the outlook for future research effort are presented.

Solid-state batteries that employ solid-state electrolytes (SSEs) to replace routine liquid electrolytes are considered to be one of the most promising solutions for achieving high-safety lithium metal batteries. SSEs with high mechanical modulus, thermal stability, and non-flammability can not only inhibit the growth of lithium dendrites but also enhance the safety of lithium metal batteries. However, several internal materials/electrodes-related thermal hazards demonstrated by recent works show that solid-state lithium metal batteries (SSLMBs) are not impenetrable. Therefore, understanding the potential thermal hazards of SSLMBs is critical for their more secure and widespread applications. In this contribution, we provide a comprehensive overview of the thermal failure mechanism of SSLMBs from materials to devices. Also, strategies to improve the thermal safety performance of SSLMBs are included from the view of material enhancement, battery design, and external management. Consequently, the future directions are further provided. We hope that this work can shed bright insights into the path of constructing energy storage devices with high energy density and safety.

Electrochemical water splitting represents a promising technology for green hydrogen production. To design advanced electrocatalysts, it is crucial to identify their active sites and interpret the relationship between their structures and performance. Materials extensively studied as electrocatalysts include noble-metal-based (e.g., Ru, Ir, and Pt) and non-noble-metal-based (e.g., 3d transition metals) compounds. Recently, advancements in characterization techniques and theoretical calculations have revealed novel and unusual active sites. The present review highlights the latest achievements in the discovery and identification of various unconventional active sites for electrochemical water splitting, with a focus on state-of-the-art strategies for determining true active sites and establishing structure–activity relationships. Furthermore, we discuss the remaining challenges and future perspectives for the development of next-generation electrocatalysts with unusual active sites. By presenting a fresh perspective on the unconventional reaction sites involved in electrochemical water splitting, this review aims to provide valuable guidance for the future study of electrocatalysts in industrial applications.

Aqueous zinc (Zn) ion batteries (AZIBs) are regarded as one of the promising candidates for next-generation electrochemical energy storage systems due to their low cost, high safety, and environmental friendliness. However, the commercialization of AZIBs has been severely restricted by the growth of dendrite at the Zn metal anode. Tailoring the planar-structured Zn anodes into three-dimensional (3D) structures has proven to be an effective way to modulate the plating/stripping behavior of Zn anodes, resulting in the suppression of dendrite formation. This review provides an up-to-date review of 3D structured Zn metal anodes, including working principles, design, current status, and future prospects. We aim to give the readers a comprehensive understanding of 3D-structured Zn anodes and their effective usage to enhance AZIB performance.

The cover image focuses on neuronal circuit motif with specialized excitatory–inhibitory connectivity pattern. The neuronal circuit is an advanced functional unit of the brain beyond neurons and synapses. Neurons do not function in isolation and are linked to ensembles or circuit motifs that process specific types of information, enables multidimensional signal processing in the information flow of the brain. The authors demonstrate a core processor that can be employed to construct commonly used neuronal circuits and further perform bio-realistic neuromorphic computing. Exploring the working principle, physical configuration, scalable design, and extensive signal-processing capabilities of core processing neuron is crucial for advancing hardware development for brain-inspired integrated neuromorphic systems.

A pulse-driven electrochemical synaptic transistor for supersensitive and ultrafast biosensor is proposed.

Solar-blind ultraviolet (UV) photodetectors based on p-organic/n-Ga₂O₃ hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar-blind photodetector based on p-type poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT)/n-type amorphous Ga₂O₃ (a-Ga₂O₃) is fabricated and investigated, which can work in the phototransistor mode coupling with self-powered mode. With the introduction of PCDTBT, the dark current of such the a-Ga₂O₃-based photodetector is decreased to 0.48 pA. Meanwhile, the photoresponse parameters of the a-Ga₂O₃-based photodetector in the phototransistor mode to solar-blind UV light are further increased, that is, responsivity (R), photo-detectivity (D*), and external quantum efficiency (EQE) enhanced to 187 A W^–1, 1.3 × 10¹⁶ Jones and 9.1 × 10⁴ % under the weak light intensity of 11 μW cm^–2, respectively. Thanks to the formation of the built-in field in the p-PCDTBT/n-Ga₂O₃ type-II heterojunction, the PCDTBT/Ga₂O₃ multifunctional photodetector shows self-powered behavior. The responsivity of p-PCDTBT/n-Ga₂O₃ multifunctional photodetector is 57.5 mA W^–1 at zero bias. Such multifunctional p-n hybrid heterojunction-based photodetectors set the stage for realizing high-performance amorphous Ga₂O₃ heterojunction-based photodetectors.

Infrared (IR) detection is vital for various military and civilian applications. Recent research has highlighted the potential of two-dimensional (2D) topological semimetals in IR detection due to their distinctive advantages, including van der Waals (vdW) stacking, gapless electronic structure, and Van Hove singularities in the electronic density of states. However, challenges such as large-scale patterning, poor photoresponsivity, and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing. Here, we demonstrate the in situ fabrication of PtSe₂/Ge Schottky junction by directly depositing 2D PtSe₂ films with a vertical layer structure on a Ge substrate with an ultrathin AlO_x layer. Due to high quality junction, the photodetector features a broadband response of up to 4.6 μm, along with a high specific detectivity of ~10¹² Jones, and operates with remarkable stability in ambient conditions as well. Moreover, the highly integrated device arrays based on PtSe₂/AlO_x/Ge Schottky junction showcases excellent Mid-IR (MIR) imaging capability at room temperature. These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.