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IEEE Circuits and Systems Society 电气和电子工程师学会电路与系统协会
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-13 DOI: 10.1109/JETCAS.2024.3364895
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引用次数: 0
Incoming Editorial 来稿编辑
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-13 DOI: 10.1109/JETCAS.2023.3335798
Wen-Hsiao Peng
The IEEE Journal On Emerging and Selected Topics in Circuits and Systems (JETCAS) is a periodical sponsored by the IEEE Circuits and Systems Society (CASS). Since its advent about a decade ago, JETCAS has published quarterly special issues on emerging and selected topics that cover the entire field of interest of the CASS. Particular emphasis has been put on emerging areas that are expected to grow over time in scientific and professional importance. For example, the special issues published in the last two years touched upon industry x.0 applications, unconventional computing techniques, memristive circuits and systems, quantum computation, processing-in-memory machine learning, and highly renewable penetrated power systems. Some of these special issues have become valuable references in many forefront technology developments within and beyond CASS. Thanks to the strong leadership by Prof. Ho Ching (Herbert) Iu, the outgoing Editor-in-Chief, and the remarkable work of his editorial board, JETCAS is now one of the leading journals in the CASS, with an impact factor of 4.6-5.8 from 2022 to 2023. Its LinkedIn profile page (https://bit.ly/3FLIBFs) has attracted more than 1000+ followers since it went online in 2020.
IEEE 电路与系统新兴选题期刊》(JETCAS)是由 IEEE 电路与系统协会(CASS)主办的期刊。自十年前创刊以来,JETCAS 每季度出版一期关于新兴和精选主题的特刊,涵盖了 CASS 关注的整个领域。特别强调的是,随着时间的推移,这些新兴领域的科学和专业重要性将不断增加。例如,过去两年出版的特刊涉及工业 x.0 应用、非常规计算技术、忆阻电路和系统、量子计算、内存处理机器学习和高可再生渗透电力系统。其中一些专刊已成为中国科协内外许多前沿技术发展的重要参考资料。在即将离任的主编Ho Ching (Herbert) Iu教授的有力领导及其编辑委员会的出色工作下,《JETCAS》现已成为中国科协的主要期刊之一,2022-2023年的影响因子为4.6-5.8。自2020年上线以来,其LinkedIn个人主页(https://bit.ly/3FLIBFs)已吸引了1000多名关注者。
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引用次数: 0
IEEE Journal on Emerging and Selected Topics in Circuits and Systems Publication Information 电气和电子工程师学会电路与系统新专题与选题期刊》出版信息
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-13 DOI: 10.1109/JETCAS.2024.3364891
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引用次数: 0
TechRxiv: Share Your Preprint Research with the World! TechRxiv:与世界分享您的预印本研究成果!
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-13 DOI: 10.1109/JETCAS.2024.3371131
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引用次数: 0
Guest Editorial: Integrated Devices, Circuits, and Systems for the 6G Era 特邀社论:面向 6G 时代的集成器件、电路和系统
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-13 DOI: 10.1109/JETCAS.2024.3367094
Xi Zhu;Roberto Gómez-García;Chun-Hsing Li;Bryan Schwitter
This Special Issue of the IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS) is dedicated to demonstrating the latest research progress on integrated devices, circuits and systems for the 6G Era. As 5G rolls out worldwide, teams of visionary experts are developing roadmaps and revolutionary applications for the next-generation wireless network: 6G. Indeed, the 6G mobile networks will establish new standards to fulfill the unreachable performance required by the current 5G networks. It is anticipated that 6G technology will be capable of supporting extremely high-performance connectivity with massive numbers of connected devices.
本期《电气和电子工程师学会电路与系统新兴选题期刊》(IEEE Journal on Emerging and Selected Topics in Circuits and Systems,JETCAS)特刊致力于展示 6G 时代集成器件、电路和系统的最新研究进展。随着 5G 在全球的推广,富有远见的专家团队正在为下一代无线网络制定路线图并开发革命性的应用:6G.事实上,6G 移动网络将建立新的标准,以实现当前 5G 网络无法达到的性能要求。预计 6G 技术将能够支持与大量联网设备的极高性能连接。
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引用次数: 0
IEEE Journal on Emerging and Selected Topics in Circuits and Systems information for authors 供作者参考的《IEEE 电路与系统新兴选题期刊
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-03-13 DOI: 10.1109/JETCAS.2024.3364893
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引用次数: 0
Enhancing Context Models for Point Cloud Geometry Compression With Context Feature Residuals and Multi-Loss 利用上下文特征残差和多重损失增强用于点云几何压缩的上下文模型
IF 3.7 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-02-20 DOI: 10.1109/JETCAS.2024.3367729
Chang Sun;Hui Yuan;Shuai Li;Xin Lu;Raouf Hamzaoui
In point cloud geometry compression, context models usually use the one-hot encoding of node occupancy as the label, and the cross-entropy between the one-hot encoding and the probability distribution predicted by the context model as the loss function. However, this approach has two main weaknesses. First, the differences between contexts of different nodes are not significant, making it difficult for the context model to accurately predict the probability distribution of node occupancy. Second, as the one-hot encoding is not the actual probability distribution of node occupancy, the cross-entropy loss function is inaccurate. To address these problems, we propose a general structure that can enhance existing context models. We introduce the context feature residuals into the context model to amplify the differences between contexts. We also add a multi-layer perception branch, that uses the mean squared error between its output and node occupancy as a loss function to provide accurate gradients in backpropagation. We validate our method by showing that it can improve the performance of an octree-based model (OctAttention) and a voxel-based model (VoxelDNN) on the object point cloud datasets MPEG 8i and MVUB, as well as the LiDAR point cloud dataset SemanticKITTI.
在点云几何压缩中,上下文模型通常使用节点占用率的单次编码作为标签,并使用单次编码与上下文模型预测的概率分布之间的交叉熵作为损失函数。然而,这种方法有两个主要缺点。首先,不同节点的上下文之间差异不大,因此上下文模型难以准确预测节点占用的概率分布。其次,由于单次编码并不是节点占用率的实际概率分布,因此交叉熵损失函数并不准确。为了解决这些问题,我们提出了一种可以增强现有上下文模型的通用结构。我们将上下文特征残差引入上下文模型,以放大上下文之间的差异。我们还添加了多层感知分支,将其输出与节点占用率之间的均方误差作为损失函数,从而在反向传播中提供准确的梯度。我们验证了我们的方法,证明它能在对象点云数据集 MPEG 8i 和 MVUB 以及 LiDAR 点云数据集 SemanticKITTI 上提高基于八度模型(OctAttention)和基于体素模型(VoxelDNN)的性能。
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引用次数: 0
Metamaterial-Enabled Ultrawideband mmWave Antenna-in-Package Using Heterogeneously-Integrated Silicon IPD and HDI-PCB for B5G/ 6G Applications 利用异质集成硅 IPD 和 HDI-PCB 封装超宽带毫米波天线,实现 B5G/6G 应用
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-01-24 DOI: 10.1109/JETCAS.2024.3358222
Neda Khiabani;Ching-Wen Chiang;Nai-Chen Liu;Pai-Yen Chen;Yen-Cheng Kuan;Chung-Tse Michael Wu
This work presents the design, creation, and testing of ultrawideband millimeter-wave (mmWave) antennas with a tightly coupled array (TCA) configuration. These antennas are made using metamaterial (MTM) designs and advanced high-density interconnect (HDI) antenna-in-package (AiP) technologies, ideal for beyond-5G (B5G) and 6G networks. The main elements of the MTM antenna array are constructed with silicon-based integrated passive device (IPD) technology and are flip-chip bonded to a multi-layered HDI-PCB that includes a resistive frequency selective surface (FSS). These array antennas are differentially fed through a coax-via system. The study presents two types of $5times 5$ finite arrays: a metal-insulator-metal (MIM) capacitor-based MTM bowtie array with a differential Voltage Standing Wave Ratio (VSWR) $le3.5$ , operating from 16.2 to 100 GHz (excluding 18.26–18.68 GHz and 60.8–61.13 GHz), and an interdigital capacitor-based MTM bowtie array functioning from 18.85 to 100 GHz (excluding 41.52–42.25 GHz). Experimental validation of these prototypes confirms their performance, aligning well with simulated results in terms of bandwidth and radiation characteristics.
本研究介绍了具有紧密耦合阵列(TCA)配置的超宽带毫米波(mmWave)天线的设计、创建和测试。这些天线采用超材料 (MTM) 设计和先进的高密度互连 (HDI) 封装天线 (AiP) 技术制造,是超 5G (B5G) 和 6G 网络的理想选择。MTM 天线阵列的主要元件采用硅基集成无源器件 (IPD) 技术制造,并通过倒装芯片粘合到包括电阻频率选择表面 (FSS) 的多层 HDI-PCB 上。这些阵列天线通过同轴馈电系统进行差分馈电。该研究介绍了两种类型的 5 美元/次 5 元有限阵列:一种是基于金属-绝缘体-金属(MIM)电容器的 MTM 弓形阵列,其差分电压驻波比(VSWR)为 3.5 美元/次,工作频率为 16.2 至 100 GHz(不包括 18.26 至 18.68 GHz 和 60.8 至 61.13 GHz);另一种是基于数字间电容器的 MTM 弓形阵列,工作频率为 18.85 至 100 GHz(不包括 41.52 至 42.25 GHz)。这些原型的实验验证证实了它们的性能,在带宽和辐射特性方面与模拟结果十分吻合。
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引用次数: 0
A 299–315-GHz Dual-Band Radiator Array With Cascaded Transmission Line-Based Feedback Network for Phase Noise Improvement 基于级联传输线反馈网络的 299-315-GHz 双频辐射器阵列,用于改善相位噪声
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-01-23 DOI: 10.1109/JETCAS.2024.3357612
Meng Yang;Chi Zhang;Liang Wu;Quan Xue
This paper presents a THz radiator array integrating two elements, each of which consists of two fundamental oscillators operating at half of the output frequency, a push-push frequency doubler and an on- chip square-shaped loop antenna. To improve the phase noise for the fundamental oscillators, a feedback network containing a long cascaded transmission line featuring high frequency selectivity is proposed. Then, the signal power is extracted through the use of a compact coupled line to drive the doubler, thereby making the integration of a multi-element array more manageable. Furthermore, the strength of the coupling between the two adjacent oscillators within each element is designed properly, yielding dual-band operation to extend the frequency range. Fabricated in a 65-nm bulk CMOS process, the radiator chip assembled with a crystal slab and a silicon lens achieves output frequency ranging from 299.2 to 314.8 GHz. The measured peak effective isotropically radiated power (EIRP) and radiated power are 3.9 and −16.1 dBm, respectively, while consuming 93-mW DC power from a 1.4-V power supply. The phase noise measures −79.9 dBc/Hz at 1-MHz offset from 312 GHz, corresponding to a figure-of-merit (FoM) of 170.1 dBc/Hz. The core area of the chip is $0.65times 0.21$ mm2, excluding the pads.
本文介绍了一种太赫兹辐射器阵列,该阵列集成了两个元件,每个元件由两个工作频率为输出频率一半的基频振荡器、一个推推倍频器和一个片上方形环形天线组成。为改善基频振荡器的相位噪声,提出了一个反馈网络,其中包含一条具有高频选择性的长级联传输线。然后,通过使用紧凑的耦合线提取信号功率来驱动倍频器,从而使多元件阵列的集成更加易于管理。此外,还对每个元件内相邻两个振荡器之间的耦合强度进行了适当设计,从而实现了双频操作,扩大了频率范围。辐射器芯片采用 65 纳米体 CMOS 工艺制造,与晶体板和硅透镜组装在一起,输出频率范围为 299.2 至 314.8 千兆赫。测得的峰值有效同向辐射功率(EIRP)和辐射功率分别为 3.9 和 -16.1 dBm,而 1.4 V 电源的直流消耗功率为 93 mW。在偏移 312 GHz 1-MHz 时,相位噪声为 -79.9 dBc/Hz,相当于 170.1 dBc/Hz。芯片的核心面积为 0.65 美元乘以 0.21 美元 mm2(不包括焊盘)。
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引用次数: 0
Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications 用于 5G/6G 应用的毫米波砷化镓超宽带中功率放大器和宽带大功率放大器
IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-01-19 DOI: 10.1109/JETCAS.2024.3356010
Zi-Hao Fu;Ming-Xuan Li;Tzyh-Ghuang Ma;Chan-Shin Wu;Kun-You Lin
This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using $0.15~mu text{m}$ GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power ( $text{P}_{mathrm {sat}}$ ) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of $2times1$ mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm $text{P}_{mathrm {sat}}$ , and a PAE over 28% from 24 to 32 GHz with a $2.4times1.1$ mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.
本文介绍了一种超宽带(UWB)中功率放大器(MPA)和一种工作在 5G/6G 频段的宽带大功率放大器(HPA)。通过采用 0.15~mu text{m}$ GaAs 伪态高电子迁移率晶体管 (pHEMT) 技术工艺,所提出的 UWB MPA 实现了 16.5 dB 的平均小信号增益、24 dBm 的饱和输出功率($text{P}_{mathrm {sat}}$)以及 24 至 38 GHz 超过 24% 的峰值功率附加效率(PAE),芯片面积为 2times1$ mm2。宽带 HPA 的平均小信号增益为 17dB,$text{P}_{mathrm {sat}}$ 为 29dBm,24 至 32 GHz 的 PAE 超过 28%,芯片面积为 2.4times1.1mm2 美元。测量结果证明了所提出的功率放大器在 5G/6G 毫米波应用中的巨大潜力。
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引用次数: 0
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IEEE Journal on Emerging and Selected Topics in Circuits and Systems
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