{"title":"Issue Information: Crystal Research and Technology 11'2024","authors":"","doi":"10.1002/crat.202470044","DOIUrl":"https://doi.org/10.1002/crat.202470044","url":null,"abstract":"","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202470044","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The formation of solid solutions in the CaMoO4-CaWO4 binary system is investigated by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy methods. The intermixtures of CaMoO4 and CaWO4 components are sintered in 600—1200 °C temperature range (in 100 °C increments). The solidus of the CaMoxW(1-x)O4 system is studied by the differential scanning calorimetry method in the x = 0.3 … 1.0 range. CaMoO4-CaWO4 phase diagram is constructed up to 1550 °C. The minimal sintering temperature in order to get CaMoxW(1-x)O4 solid solution is shown to be 800 °C. Cathodoluminescence study of CaMoxW(1-x)O4 compounds showed higher intensity of molybdate luminescence type.
通过 X 射线衍射、拉曼光谱和扫描电子显微镜方法研究了 CaMoO4-CaWO4 二元体系中固溶体的形成。CaMoO4 和 CaWO4 成分的混合物在 600-1200 °C 温度范围内烧结(以 100 °C 为增量)。通过差示扫描量热法研究了 CaMoxW(1-x)O4 体系在 x = 0.3 ... 1.0 范围内的固相。绘制了高达 1550 °C 的 CaMoO4-CaWO4 相图。得到 CaMoxW(1-x)O4 固溶体的最低烧结温度为 800 ℃。对 CaMoxW(1-x)O4化合物的阴极荧光研究表明,钼酸盐类发光强度更高。
{"title":"Ca(Mo,W)O4 Solid Solutions Formation in CaMoO4-CaWO4 System","authors":"D.M. Khramtsova, A.B. Kuznetsov, V.D. Grigorieva, A.A. Ryadun, A.E. Musikhin, K.A. Kokh","doi":"10.1002/crat.202400127","DOIUrl":"https://doi.org/10.1002/crat.202400127","url":null,"abstract":"<p>The formation of solid solutions in the CaMoO<sub>4</sub>-CaWO<sub>4</sub> binary system is investigated by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy methods. The intermixtures of CaMoO<sub>4</sub> and CaWO<sub>4</sub> components are sintered in 600—1200 °C temperature range (in 100 °C increments). The solidus of the CaMo<sub>x</sub>W<sub>(1-x)</sub>O<sub>4</sub> system is studied by the differential scanning calorimetry method in the x = 0.3 … 1.0 range. CaMoO<sub>4</sub>-CaWO<sub>4</sub> phase diagram is constructed up to 1550 °C. The minimal sintering temperature in order to get CaMo<sub>x</sub>W<sub>(1-x)</sub>O<sub>4</sub> solid solution is shown to be 800 °C. Cathodoluminescence study of CaMo<sub>x</sub>W<sub>(1-x)</sub>O<sub>4</sub> compounds showed higher intensity of molybdate luminescence type.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, a crystal plasticity finite element method (CPFEM), considering the grain morphology and orientation, as well as the dislocation density, is used to research the tensile deformation behavior of GH4169 based on Electron Backscatter Diffraction (EBSD). The stress, plastic strain, and dislocation density distributions are obtained for different levels of deformation. Results show that the stress, plastic strain, and dislocation density exhibit obvious heterogeneous plastic deformation, and stress concentration and dislocation pileup mainly occurs near grain boundaries. The initial dislocation density mainly affects the stress–strain curve of the material, and it can obviously effect the yield strength but cannot influence the hardening ability of the material. The total dislocation density increases with plastic strain. However, the texture evolution has no evident change with increasing plastic strain, except for the increase of texture content in Cube (001)[100].
{"title":"Research on the Heterogeneous Deformation Behavior of Nickel Base Alloy Based on CPFEM","authors":"Erqiang Liu, Mengchun You, Hongwei Zhao, Jianguo Wu, Xianliang Yang, Gesheng Xiao, Jinbao Lin","doi":"10.1002/crat.202400170","DOIUrl":"https://doi.org/10.1002/crat.202400170","url":null,"abstract":"<p>In this paper, a crystal plasticity finite element method (CPFEM), considering the grain morphology and orientation, as well as the dislocation density, is used to research the tensile deformation behavior of GH4169 based on Electron Backscatter Diffraction (EBSD). The stress, plastic strain, and dislocation density distributions are obtained for different levels of deformation. Results show that the stress, plastic strain, and dislocation density exhibit obvious heterogeneous plastic deformation, and stress concentration and dislocation pileup mainly occurs near grain boundaries. The initial dislocation density mainly affects the stress–strain curve of the material, and it can obviously effect the yield strength but cannot influence the hardening ability of the material. The total dislocation density increases with plastic strain. However, the texture evolution has no evident change with increasing plastic strain, except for the increase of texture content in Cube (001)[100].</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Nizhankovskyi, A. Romanenko, O. Serdiuk, E. Vovk, N. Sidelnikova, A. Kozlovskyi, S. Kryvonohov, O. Lukienko, S. Skorik, N. Kovalenko, K. Bryliova, I. Pritula
Laser-quality yttrium-aluminum garnet single crystals doped with neodymium (YAG:Nd) of a concentration up to 1 at. % is grown by the method of horizontal directional crystallization from a molybdenum crucible in the protective reducing atmosphere based on argon, СО, and hydrogen. It is found that the content of carbon impurity in the grown crystals does not exceed 5·10−3 wt %, the content of molybdenum being on the level of 1.5·10−3 wt %. The optical quality of the crystals depends on the composition of the growth atmosphere and annealing. It is shown that, besides the bands of neodymium ion absorption, the crystals are characterized by the intense absorption in the UV edge of the spectrum at 370 nm wavelength, and by the wide absorption band with a maximum at 580 nm caused by formation of F and F+-centers. The absorption at 370 and 580 nm can be eliminated by annealing. The structure perfection of the crystals is characterized by the rocking curve half-width (β) which value varies within the limits of 10–14 arc. sec for (001) plane. Laser testing demonstrates the parameters comparable with those of YAG:Nd crystals grown by the Czochralski method from iridium crucible.
{"title":"Growth of YAG:Nd laser crystals by Horizontal Directional Crystallization in Protective Carbon-Containing Atmosphere","authors":"S. Nizhankovskyi, A. Romanenko, O. Serdiuk, E. Vovk, N. Sidelnikova, A. Kozlovskyi, S. Kryvonohov, O. Lukienko, S. Skorik, N. Kovalenko, K. Bryliova, I. Pritula","doi":"10.1002/crat.202400104","DOIUrl":"https://doi.org/10.1002/crat.202400104","url":null,"abstract":"<p>Laser-quality yttrium-aluminum garnet single crystals doped with neodymium (YAG:Nd) of a concentration up to 1 at. % is grown by the method of horizontal directional crystallization from a molybdenum crucible in the protective reducing atmosphere based on argon, СО, and hydrogen. It is found that the content of carbon impurity in the grown crystals does not exceed 5·10<sup>−3</sup> wt %, the content of molybdenum being on the level of 1.5·10<sup>−3</sup> wt %. The optical quality of the crystals depends on the composition of the growth atmosphere and annealing. It is shown that, besides the bands of neodymium ion absorption, the crystals are characterized by the intense absorption in the UV edge of the spectrum at 370 nm wavelength, and by the wide absorption band with a maximum at 580 nm caused by formation of F and F<sup>+</sup>-centers. The absorption at 370 and 580 nm can be eliminated by annealing. The structure perfection of the crystals is characterized by the rocking curve half-width (<i>β</i>) which value varies within the limits of 10–14 arc. sec for (001) plane. Laser testing demonstrates the parameters comparable with those of YAG:Nd crystals grown by the Czochralski method from iridium crucible.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142665071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bis(8-hydroxyquinolates) Zinc (Znq2) can be used as a light-emitting layer material in OLED devices to achieve its efficient electroluminescence effect. In this paper, Znq2 powder has been successfully synthesized and modified by the physical vapor deposition (PVD) method. Precursors and nano-materials are characterized by XRD, SEM, PL, and so on. The performance of the modified material has been significantly improved. The emission intensity and absorption intensity in the deposited products increased with the increase in PVD temperature. At 453 K, luminous properties such as luminous intensity reach the optimal value including its fluorescence lifetime. Fluorescence lifetime values vary from 13 to 17 ns with the increase in temperature. The luminescence mechanism is also discussed. The energy gap and absorption spectrum of HOM-LUMO are calculated by the DFT/UB3LYP method. The experimental values agree well with the theoretical values. The nanomaterial crystals modified by PVD technology are more orderly, impurities are reduced, and the luminous stability of the material is improved, which may be one of the reasons for the relatively slow decline in product life. The research combined with theoretical simulation is expected to be helpful to the research and promotion of such materials.
{"title":"Preparation and Photophysical Properties of Znq2 Metallic Nanomaterials","authors":"Fulian Li, Yunshuai Long, Xin Huang, Penghui Ma, Guiyi Huang, Yumin Song","doi":"10.1002/crat.202400116","DOIUrl":"https://doi.org/10.1002/crat.202400116","url":null,"abstract":"<p>Bis(8-hydroxyquinolates) Zinc (Znq<sub>2</sub>) can be used as a light-emitting layer material in OLED devices to achieve its efficient electroluminescence effect. In this paper, Znq<sub>2</sub> powder has been successfully synthesized and modified by the physical vapor deposition (PVD) method. Precursors and nano-materials are characterized by XRD, SEM, PL, and so on. The performance of the modified material has been significantly improved. The emission intensity and absorption intensity in the deposited products increased with the increase in PVD temperature. At 453 K, luminous properties such as luminous intensity reach the optimal value including its fluorescence lifetime. Fluorescence lifetime values vary from 13 to 17 ns with the increase in temperature. The luminescence mechanism is also discussed. The energy gap and absorption spectrum of HOM-LUMO are calculated by the DFT/UB3LYP method. The experimental values agree well with the theoretical values. The nanomaterial crystals modified by PVD technology are more orderly, impurities are reduced, and the luminous stability of the material is improved, which may be one of the reasons for the relatively slow decline in product life. The research combined with theoretical simulation is expected to be helpful to the research and promotion of such materials.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Issue Information: Crystal Research and Technology 10'2024","authors":"","doi":"10.1002/crat.202470043","DOIUrl":"https://doi.org/10.1002/crat.202470043","url":null,"abstract":"","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 10","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202470043","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142435270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The synthesis of copper nanocrystals on tartaric acid jute composite surface is reported. The formation of nanocrystals is detected by FT IR, Powder X-ray diffraction, SEM, and TEM analysis. The average size of the nanocrystals is found to be 500 nm. The reaction of the copper nanocrystals with CO2 resulted in a decrease in the size of the nanoparticles. Cycloaddition reaction of epoxides to cyclic carbonate is efficiently carried out by the copper nanocrystals on tartaric acid jute composite surface (CUNPJT) without using any cocatalyst and solvent. To the best of author's knowledge, this is the first example of copper nanocrystals catalyzing the cycloaddition of CO2 and epoxide.
报告了在酒石酸黄麻复合材料表面合成纳米铜晶体的过程。通过傅立叶变换红外光谱、粉末 X 射线衍射、扫描电镜和 TEM 分析检测了纳米晶体的形成。纳米晶体的平均尺寸为 500 nm。纳米铜晶体与 CO2 反应后,纳米粒子的尺寸减小。酒石酸黄麻复合表面(CUNPJT)上的纳米铜晶体不使用任何助催化剂和溶剂,就能有效地进行环氧化物与环碳酸盐的环加成反应。据作者所知,这是纳米铜晶体催化二氧化碳和环氧化物环化反应的第一个实例。
{"title":"Green Conversion of Epoxides to Cyclic Carbonates by Copper Nanocrystals Fabricated on Jute Tartaric Acid Composite Surface","authors":"Sankar Barman, Sushobhan Ghosh","doi":"10.1002/crat.202400114","DOIUrl":"https://doi.org/10.1002/crat.202400114","url":null,"abstract":"<p>The synthesis of copper nanocrystals on tartaric acid jute composite surface is reported. The formation of nanocrystals is detected by FT IR, Powder X-ray diffraction, SEM, and TEM analysis. The average size of the nanocrystals is found to be 500 nm. The reaction of the copper nanocrystals with CO<sub>2</sub> resulted in a decrease in the size of the nanoparticles. Cycloaddition reaction of epoxides to cyclic carbonate is efficiently carried out by the copper nanocrystals on tartaric acid jute composite surface (CUNPJT) without using any cocatalyst and solvent. To the best of author's knowledge, this is the first example of copper nanocrystals catalyzing the cycloaddition of CO<sub>2</sub> and epoxide.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 11","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
[Hanen Alhussain, Hela Ferjani, Youssef Ben Smida; https://doi.org/10.1002/crat.202300340]
[An error in the spelling of an author's name in the article. The name in the published paper is [Hanen] and should be corrected to [Hanan].
We apologize for this error.
[Hanen Alhussain, Hela Ferjani, Youssef Ben Smida; https://doi.org/10.1002/crat.202300340][文章中作者姓名拼写错误。已发表论文中的作者姓名是 [Hanen],应更正为 [Hanan]。我们对此错误深表歉意。
{"title":"Correction to First-Principles Calculations to Investigate the Ground State, Mechanical Stability, Electronic Structure, and Optical Properties of Tl2SnX3 (X = S, Se, Te)","authors":"","doi":"10.1002/crat.202470042","DOIUrl":"https://doi.org/10.1002/crat.202470042","url":null,"abstract":"<p>[Hanen Alhussain, Hela Ferjani, Youssef Ben Smida; https://doi.org/10.1002/crat.202300340]</p><p>[An error in the spelling of an author's name in the article. The name in the published paper is [Hanen] and should be corrected to [Hanan].</p><p>We apologize for this error.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 10","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202470042","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142435790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Alexander Frebel, Songhak Yoon, Samuel Meles Neguse, Dennis Michael Jöckel, Marc Widenmeyer, Stefan G. Ebbinghaus, Benjamin Balke-Grünewald, Anke Weidenkaff
Morphology-controlled Cs2SbBr6 crystals are synthesized by Bi- and Ag-substitution of the precursor solution. X-ray diffraction (XRD) together with Raman spectroscopy confirms the lattice tilting and symmetry changes with the dominant appearance of higher index facets by Bi substitution. Ag substitution does not induce crystal symmetry changes in the Cs2BBr6 (B = Sb or Bi) phase, but results in highly defective structures hindering the formation of a smooth surface during the crystal growth. Successful substitution of Bi and limited substitution of Ag into Cs2SbBr6 is also confirmed by energy dispersive X-ray spectroscopy (EDX). This research provides design principles and practical examples of how to control the morphology of Cs2SbBr6 crystals with structural defects and multiphase formation.
通过对前驱体溶液进行铋和银替代,合成了形态可控的 Cs2SbBr6 晶体。X 射线衍射(XRD)和拉曼光谱证实了晶格倾斜和对称性的变化,Bi 取代后主要出现了高折射率刻面。银的替代不会引起 Cs2BBr6(B = Sb 或 Bi)相晶体对称性的变化,但会导致高度缺陷结构,阻碍晶体生长过程中光滑表面的形成。能量色散 X 射线光谱(EDX)也证实了 Cs2SbBr6 中 Bi 的成功替代和 Ag 的有限替代。这项研究为如何控制具有结构缺陷和多相形成的 Cs2SbBr6 晶体的形态提供了设计原则和实际范例。
{"title":"Morphologically and Compositionally Controlled Cs2SbBr6 by Bi and Ag Substitution","authors":"Alexander Frebel, Songhak Yoon, Samuel Meles Neguse, Dennis Michael Jöckel, Marc Widenmeyer, Stefan G. Ebbinghaus, Benjamin Balke-Grünewald, Anke Weidenkaff","doi":"10.1002/crat.202400055","DOIUrl":"10.1002/crat.202400055","url":null,"abstract":"<p>Morphology-controlled Cs<sub>2</sub>SbBr<sub>6</sub> crystals are synthesized by Bi- and Ag-substitution of the precursor solution. X-ray diffraction (XRD) together with Raman spectroscopy confirms the lattice tilting and symmetry changes with the dominant appearance of higher index facets by Bi substitution. Ag substitution does not induce crystal symmetry changes in the Cs<sub>2</sub>BBr<sub>6</sub> (B = Sb or Bi) phase, but results in highly defective structures hindering the formation of a smooth surface during the crystal growth. Successful substitution of Bi and limited substitution of Ag into Cs<sub>2</sub>SbBr<sub>6</sub> is also confirmed by energy dispersive X-ray spectroscopy (EDX). This research provides design principles and practical examples of how to control the morphology of Cs<sub>2</sub>SbBr<sub>6</sub> crystals with structural defects and multiphase formation.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 10","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/crat.202400055","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142268284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m−1 at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK−1, that decreased by copper doping to 0.44 W mK−1 at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K−1 respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 108 µV mK−2, 0.005 and 0.02 Volt−1 respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 108 µV mK−2, 0.017 and 0.07 Volt−1 respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.
原始硒化锡(SnSe)和掺杂铜(Cu)的硒化锡单晶体是通过直接蒸汽传输技术生长出来的。对生长出的晶体进行的能量色散 X 射线、X 射线衍射和拉曼光谱分析表明,单相掺杂的硒化锡具有优选的化学计量学特性。在 310 K 时,SnSe 和掺铜 SnSe 的电导率分别为 24.24 和 106.06 S m-1,并随着温度的升高而增加。利用霍尔效应评估了生长单晶的载流子浓度。原始 SnSe 的晶格热导率为 0.61 W mK-1,掺铜后在 310 K 时降至 0.44 W mK-1,随着温度升高至 483 K,两种晶体的热导率均有所下降。生长的 SnSe 和掺铜 SnSe 的塞贝克系数均为正值,在 310 K 时的值分别为 536.44 和 492.90 µV K-1,这证实了其 p 型半导体性质。生长的原始 SnSe 的功率因数、优点系数和热电兼容系数分别为 0.25 × 108 µV mK-2、0.005 和 0.02 伏特-1,而掺铜的 SnSe 则有所提高,在 310 K 时分别为 0.08 × 108 µV mK-2、0.017 和 0.07 伏特-1。
{"title":"Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide","authors":"Satendrasinh Bharthaniya, Mahesh Chaudhari, Ajay Agarwal, Kailash Chaudhari, Sunil Chaki","doi":"10.1002/crat.202400115","DOIUrl":"https://doi.org/10.1002/crat.202400115","url":null,"abstract":"<p>Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m<sup>−1</sup> at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK<sup>−1</sup>, that decreased by copper doping to 0.44 W mK<sup>−1</sup> at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K<sup>−1</sup> respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.005 and 0.02 Volt<sup>−1</sup> respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.017 and 0.07 Volt<sup>−1</sup> respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 10","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142435835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}