Mishal Idrees, Imran Sadiq, Hasan M. Khan, Farhan Sadiq, Sajjad Hussain, Saira Riaz, Shahzad Naseem
The main theme of this work is to synthesize and investigate different properties of Pr3+-Cu2+ substituted X-type hexaferrite Sr2-xPrxCo2Fe28-yCuyO46 with concentration (x = 0, 0.02, 0.06, 0.1 and y = 0, 0.1, 0.3, 0.5) by adopting the sol–gel method. The XRD patterns show the single phase for all the samples. The Pr3+-Cu2+ substitution in pure X-type hexaferrites changes the structural parameters. The increment in dielectric properties with Pr3+-Cu2+ substitution is observed and the patterns show anomalous dielectric behavior. The FTIR analysis also confirms the single phase for the prepared materials. The magnetic properties of the material are enhanced with additives. The difference in saturation magnetization, coercivity, and remanence is observed on the basis of allocated cations onto the different lattice sites. The linear increase in saturation magnetization, remanence, and coercivity make them useful as permanent magnets. The thermal analysis is carried out to know the sintering temperature at which the single X-type phase can be attained. The material exhibits the minimum value of reflection loss (microwave absorption) at higher frequencies that make this material useful to act as microwave absorbing material (MAM) for super high frequency (SHF) devices.
这项工作的主题是采用溶胶-凝胶法合成并研究浓度为(x = 0、0.02、0.06、0.1 和 y = 0、0.1、0.3、0.5)的 Pr3+-Cu2+ 取代 X 型六价铁氧体 Sr2-xPrxCo2Fe28-yCuyO46 的不同性质。所有样品的 XRD 图谱均显示为单相。纯 X 型六价铬中的 Pr3+-Cu2+ 取代改变了结构参数。随着 Pr3+-Cu2+ 的取代,介电性能也随之增加,并且图案显示出异常的介电行为。傅立叶变换红外分析也证实了所制备材料的单相性。添加添加剂后,材料的磁性能得到增强。根据阳离子在不同晶格位点上的分配情况,可以观察到饱和磁化率、矫顽力和剩磁的差异。饱和磁化、剩磁和矫顽力的线性增加使它们成为有用的永磁体。通过热分析,我们了解了可达到单一 X 型相的烧结温度。该材料在较高频率下的反射损耗(微波吸收)值最小,因此可用作超高频(SHF)设备的微波吸收材料(MAM)。
{"title":"Revelation of the Microwave Absorption Properties of Nano-Sized Doubly Substituted Hexagonal Ferrites","authors":"Mishal Idrees, Imran Sadiq, Hasan M. Khan, Farhan Sadiq, Sajjad Hussain, Saira Riaz, Shahzad Naseem","doi":"10.1002/crat.202300204","DOIUrl":"10.1002/crat.202300204","url":null,"abstract":"<p>The main theme of this work is to synthesize and investigate different properties of Pr<sup>3+</sup>-Cu<sup>2+</sup> substituted X-type hexaferrite Sr<sub>2-x</sub>Pr<sub>x</sub>Co<sub>2</sub>Fe<sub>28-y</sub>Cu<sub>y</sub>O<sub>46</sub> with concentration (x = 0, 0.02, 0.06, 0.1 and y = 0, 0.1, 0.3, 0.5) by adopting the sol–gel method. The XRD patterns show the single phase for all the samples. The Pr<sup>3+</sup>-Cu<sup>2+</sup> substitution in pure X-type hexaferrites changes the structural parameters. The increment in dielectric properties with Pr<sup>3+</sup>-Cu<sup>2+</sup> substitution is observed and the patterns show anomalous dielectric behavior. The FTIR analysis also confirms the single phase for the prepared materials. The magnetic properties of the material are enhanced with additives. The difference in saturation magnetization, coercivity, and remanence is observed on the basis of allocated cations onto the different lattice sites. The linear increase in saturation magnetization, remanence, and coercivity make them useful as permanent magnets. The thermal analysis is carried out to know the sintering temperature at which the single X-type phase can be attained. The material exhibits the minimum value of reflection loss (microwave absorption) at higher frequencies that make this material useful to act as microwave absorbing material (MAM) for super high frequency (SHF) devices.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139579131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heavy metal in excess quantity is one of the major inorganic pollutants in water. It causes several hazards to human life and ecosystem. It exists in traces in most of the commonly available drinking water sources from lakes, ponds, wells, etc., However, their presence in treated water is relatively significant. As the treated water is primarily used for agricultural purposes, it is necessary to monitor and measure their concentration. This requires sensing of metals in aqueous medium with good sensitivity and stability. Recently, nanosensors coupled with electrochemical transducer is preferred for analyzing heavy metal in aqueous solutions. In this work, Silver oxide-bismuth oxy bromide coated with nafion is proposed as an electrochemical sensor for detection of heavy metal ions in aqueous solution. Cyclic voltammetry (CV) behavior of the proposed electrode is observed in different electrolytes. Further, Differential Pulse Voltammetry (DPV) study shows that current increases with trace nickel and copper metal ions of different concentration. Further, machine learning (ML) algorithms such as Naïve Bayes, ANN, SVM and decision trees are employed for nickel ions to train the cyclic voltammetry data and evaluate its performance. Naïve Bayes algorithm provides the best accuracy of 93.2% among all the models.
{"title":"Machine Learning Assisted Metal Oxide-Bismuth Oxy Halide Nanocomposite for Electrochemical Sensing of Heavy Metals in Aqueous Media","authors":"Vijayalakshmi Kailasam, Radha Sankararajan, Muthumeenakshi Kailasam, Sreeja Balakrishnapillai Suseela","doi":"10.1002/crat.202300173","DOIUrl":"10.1002/crat.202300173","url":null,"abstract":"<p>Heavy metal in excess quantity is one of the major inorganic pollutants in water. It causes several hazards to human life and ecosystem. It exists in traces in most of the commonly available drinking water sources from lakes, ponds, wells, etc., However, their presence in treated water is relatively significant. As the treated water is primarily used for agricultural purposes, it is necessary to monitor and measure their concentration. This requires sensing of metals in aqueous medium with good sensitivity and stability. Recently, nanosensors coupled with electrochemical transducer is preferred for analyzing heavy metal in aqueous solutions. In this work, Silver oxide-bismuth oxy bromide coated with nafion is proposed as an electrochemical sensor for detection of heavy metal ions in aqueous solution. Cyclic voltammetry (CV) behavior of the proposed electrode is observed in different electrolytes. Further, Differential Pulse Voltammetry (DPV) study shows that current increases with trace nickel and copper metal ions of different concentration. Further, machine learning (ML) algorithms such as Naïve Bayes, ANN, SVM and decision trees are employed for nickel ions to train the cyclic voltammetry data and evaluate its performance. Naïve Bayes algorithm provides the best accuracy of 93.2% among all the models.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 5","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139497714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study concerns the synthesis and structure related electrical property analysis of CaO doped ZrO2@mullite composites. Two synthesis techniques (solid state reaction route and thermal plasma sintering) are used which results the formation of a composite consisting of mixed phase of orthorhombic mullite, tetragonal and monoclinic zirconia. The lattice parameters, residual strains, average crystallite size and cell volume of these CaO-doped ZrO2@mullite composites are obtained from XRD analysis. Stabilization of t-ZrO2 phase at room temperature is confirmed. Porous microstructure observed in SEM images results in low dielectric constant value of these composites. At room temperature and selected frequency of 1MHz, the dielectric constant and loss factor of 4.7 and 3.826 × 10−2 is observed for conventional CaO stabilized ZrO2@mullite composite and that of 3.8 and 2.19 × 10−2 is reported for plasma sintered CaO stabilized ZrO2@mullite composite. The impedance spectroscopic analysis demonstrates the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation behavior of both the CaO stabilized ZrO2@mullite composites. A negligible effect of electrode polarization is realized in these composites. The electronic band gap of conventional and plasma sintered CaO stabilized ZrO2@mullite composites is found to be around 3eV.
本研究涉及掺杂氧化钙的 ZrO2@ 莫来石复合材料的合成和与结构相关的电性能分析。研究采用了两种合成技术(固态反应路线和热等离子烧结),最终形成了由正方莫来石、四方氧化锆和单斜氧化锆混合相组成的复合材料。通过 XRD 分析获得了这些掺杂 CaO 的 ZrO2@ 莫来石复合材料的晶格参数、残余应变、平均晶粒尺寸和晶胞体积。证实了 t-ZrO2 相在室温下的稳定性。扫描电镜图像中观察到的多孔微观结构导致这些复合材料的介电常数值较低。在室温和选定的 1MHz 频率下,传统 CaO 稳定 ZrO2@mullite 复合材料的介电常数和损耗因子分别为 4.7 和 3.826 × 10-2,等离子烧结 CaO 稳定 ZrO2@mullite 复合材料的介电常数和损耗因子分别为 3.8 和 2.19 × 10-2。阻抗光谱分析表明,两种 CaO 稳定 ZrO2@mullite 复合材料都具有负电阻温度系数 (NTCR) 行为和非戴贝型弛豫行为。在这些复合材料中,电极极化的影响可以忽略不计。发现传统的和等离子烧结的氧化钙稳定 ZrO2@ 莫来石复合材料的电子带隙约为 3eV。
{"title":"Effect of Frequency and Temperature on Dielectric and Transport Properties of CaO stabilized ZrO2@mullite composites","authors":"Bijaylaxmi Biswal, Dilip Kumar Mishra","doi":"10.1002/crat.202300302","DOIUrl":"10.1002/crat.202300302","url":null,"abstract":"<p>This study concerns the synthesis and structure related electrical property analysis of CaO doped ZrO<sub>2</sub>@mullite composites. Two synthesis techniques (solid state reaction route and thermal plasma sintering) are used which results the formation of a composite consisting of mixed phase of orthorhombic mullite, tetragonal and monoclinic zirconia. The lattice parameters, residual strains, average crystallite size and cell volume of these CaO-doped ZrO<sub>2</sub>@mullite composites are obtained from XRD analysis. Stabilization of t-ZrO<sub>2</sub> phase at room temperature is confirmed. Porous microstructure observed in SEM images results in low dielectric constant value of these composites. At room temperature and selected frequency of 1MHz, the dielectric constant and loss factor of 4.7 and 3.826 × 10<sup>−2</sup> is observed for conventional CaO stabilized ZrO<sub>2</sub>@mullite composite and that of 3.8 and 2.19 × 10<sup>−2</sup> is reported for plasma sintered CaO stabilized ZrO<sub>2</sub>@mullite composite. The impedance spectroscopic analysis demonstrates the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation behavior of both the CaO stabilized ZrO<sub>2</sub>@mullite composites. A negligible effect of electrode polarization is realized in these composites. The electronic band gap of conventional and plasma sintered CaO stabilized ZrO<sub>2</sub>@mullite composites is found to be around 3eV.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139497624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hongyan Cui, Liangcheng Song, Sheng Lv, Chongqiang Zhu, Chunhui Yang
Seeding metastable zone of itaconic acid in water is determined using a laser dynamic detecting technique, based on which feedback supersaturation control is performed for the crystallization process. The crystallization is strictly confined within the metastable zone throughout the whole process to effectively inhibit the secondary nucleation and the strategy of seed loading is employed to avoid the burst of primary nucleation, resulting in the uniform particle size distribution. With the aid of solution information, continuous feedback control is conducted to keep the supersaturation at a high level accelerating the crystal growth, which significantly shortens the time consumption, and also the effect of seed amount is discussed in this work.
{"title":"Feedback Supersaturation Control Crystallization Process of Itaconic Acid","authors":"Hongyan Cui, Liangcheng Song, Sheng Lv, Chongqiang Zhu, Chunhui Yang","doi":"10.1002/crat.202300264","DOIUrl":"10.1002/crat.202300264","url":null,"abstract":"<p>Seeding metastable zone of itaconic acid in water is determined using a laser dynamic detecting technique, based on which feedback supersaturation control is performed for the crystallization process. The crystallization is strictly confined within the metastable zone throughout the whole process to effectively inhibit the secondary nucleation and the strategy of seed loading is employed to avoid the burst of primary nucleation, resulting in the uniform particle size distribution. With the aid of solution information, continuous feedback control is conducted to keep the supersaturation at a high level accelerating the crystal growth, which significantly shortens the time consumption, and also the effect of seed amount is discussed in this work.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chaozhong Li, Chengshuai Li, Hang Jiang, Hao Chen, Haisheng Fang
Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.
{"title":"Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test","authors":"Chaozhong Li, Chengshuai Li, Hang Jiang, Hao Chen, Haisheng Fang","doi":"10.1002/crat.202300237","DOIUrl":"10.1002/crat.202300237","url":null,"abstract":"<p>Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H<sub>2</sub>) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Leilei Ji, Bao Xiao, Ziang Yin, Qihao Sun, Yadong Xu, Wanqi Jie
Ternary chalcogenide PbGa2Se4 with high resistivity, photosensitivity, and excellent nonlinear properties, exhibits a potential application in optoelectronic and nonlinear optical devices. However, the preparation of large-sized pure PbGa2Se4 crystals is challenging due to the presence of peritectic reaction