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Revelation of the Microwave Absorption Properties of Nano-Sized Doubly Substituted Hexagonal Ferrites 揭示纳米级双取代六方铁氧体的微波吸收特性
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-27 DOI: 10.1002/crat.202300204
Mishal Idrees, Imran Sadiq, Hasan M. Khan, Farhan Sadiq, Sajjad Hussain, Saira Riaz, Shahzad Naseem

The main theme of this work is to synthesize and investigate different properties of Pr3+-Cu2+ substituted X-type hexaferrite Sr2-xPrxCo2Fe28-yCuyO46 with concentration (x = 0, 0.02, 0.06, 0.1 and y = 0, 0.1, 0.3, 0.5) by adopting the sol–gel method. The XRD patterns show the single phase for all the samples. The Pr3+-Cu2+ substitution in pure X-type hexaferrites changes the structural parameters. The increment in dielectric properties with Pr3+-Cu2+ substitution is observed and the patterns show anomalous dielectric behavior. The FTIR analysis also confirms the single phase for the prepared materials. The magnetic properties of the material are enhanced with additives. The difference in saturation magnetization, coercivity, and remanence is observed on the basis of allocated cations onto the different lattice sites. The linear increase in saturation magnetization, remanence, and coercivity make them useful as permanent magnets. The thermal analysis is carried out to know the sintering temperature at which the single X-type phase can be attained. The material exhibits the minimum value of reflection loss (microwave absorption) at higher frequencies that make this material useful to act as microwave absorbing material (MAM) for super high frequency (SHF) devices.

这项工作的主题是采用溶胶-凝胶法合成并研究浓度为(x = 0、0.02、0.06、0.1 和 y = 0、0.1、0.3、0.5)的 Pr3+-Cu2+ 取代 X 型六价铁氧体 Sr2-xPrxCo2Fe28-yCuyO46 的不同性质。所有样品的 XRD 图谱均显示为单相。纯 X 型六价铬中的 Pr3+-Cu2+ 取代改变了结构参数。随着 Pr3+-Cu2+ 的取代,介电性能也随之增加,并且图案显示出异常的介电行为。傅立叶变换红外分析也证实了所制备材料的单相性。添加添加剂后,材料的磁性能得到增强。根据阳离子在不同晶格位点上的分配情况,可以观察到饱和磁化率、矫顽力和剩磁的差异。饱和磁化、剩磁和矫顽力的线性增加使它们成为有用的永磁体。通过热分析,我们了解了可达到单一 X 型相的烧结温度。该材料在较高频率下的反射损耗(微波吸收)值最小,因此可用作超高频(SHF)设备的微波吸收材料(MAM)。
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引用次数: 0
Machine Learning Assisted Metal Oxide-Bismuth Oxy Halide Nanocomposite for Electrochemical Sensing of Heavy Metals in Aqueous Media 用于水介质重金属电化学传感的机器学习辅助金属氧化物-卤化铋纳米复合材料
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-18 DOI: 10.1002/crat.202300173
Vijayalakshmi Kailasam, Radha Sankararajan, Muthumeenakshi Kailasam, Sreeja Balakrishnapillai Suseela

Heavy metal in excess quantity is one of the major inorganic pollutants in water. It causes several hazards to human life and ecosystem. It exists in traces in most of the commonly available drinking water sources from lakes, ponds, wells, etc., However, their presence in treated water is relatively significant. As the treated water is primarily used for agricultural purposes, it is necessary to monitor and measure their concentration. This requires sensing of metals in aqueous medium with good sensitivity and stability. Recently, nanosensors coupled with electrochemical transducer is preferred for analyzing heavy metal in aqueous solutions. In this work, Silver oxide-bismuth oxy bromide coated with nafion is proposed as an electrochemical sensor for detection of heavy metal ions in aqueous solution. Cyclic voltammetry (CV) behavior of the proposed electrode is observed in different electrolytes. Further, Differential Pulse Voltammetry (DPV) study shows that current increases with trace nickel and copper metal ions of different concentration. Further, machine learning (ML) algorithms such as Naïve Bayes, ANN, SVM and decision trees are employed for nickel ions to train the cyclic voltammetry data and evaluate its performance. Naïve Bayes algorithm provides the best accuracy of 93.2% among all the models.

过量的重金属是水中的主要无机污染物之一。它对人类生活和生态系统造成多种危害。在湖泊、池塘、水井等大多数常见的饮用水源中都存在微量重金属,但在经过处理的水中则相对较多。由于处理过的水主要用于农业目的,因此有必要对其浓度进行监测和测量。这就需要对水介质中的金属进行灵敏度高、稳定性好的传感。最近,纳米传感器与电化学传感器相结合,成为分析水溶液中重金属的首选。在这项研究中,提出了一种镀有 nafion 的氧化银-溴化铋氧电化学传感器,用于检测水溶液中的重金属离子。在不同的电解质中观察了所提出电极的循环伏安(CV)行为。此外,差分脉冲伏安法(DPV)研究表明,不同浓度的痕量镍和铜金属离子会增加电流。此外,还针对镍离子采用了机器学习(ML)算法,如奈夫贝叶斯、ANN、SVM 和决策树,以训练循环伏安数据并评估其性能。在所有模型中,Naïve Bayes 算法的准确率最高,达到 93.2%。
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引用次数: 0
Effect of Frequency and Temperature on Dielectric and Transport Properties of CaO stabilized ZrO2@mullite composites 频率和温度对 CaO 稳定 ZrO2@ 莫来石复合材料介电和传输特性的影响
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-18 DOI: 10.1002/crat.202300302
Bijaylaxmi Biswal, Dilip Kumar Mishra

This study concerns the synthesis and structure related electrical property analysis of CaO doped ZrO2@mullite composites. Two synthesis techniques (solid state reaction route and thermal plasma sintering) are used which results the formation of a composite consisting of mixed phase of orthorhombic mullite, tetragonal and monoclinic zirconia. The lattice parameters, residual strains, average crystallite size and cell volume of these CaO-doped ZrO2@mullite composites are obtained from XRD analysis. Stabilization of t-ZrO2 phase at room temperature is confirmed. Porous microstructure observed in SEM images results in low dielectric constant value of these composites. At room temperature and selected frequency of 1MHz, the dielectric constant and loss factor of 4.7 and 3.826 × 10−2 is observed for conventional CaO stabilized ZrO2@mullite composite and that of 3.8 and 2.19 × 10−2 is reported for plasma sintered CaO stabilized ZrO2@mullite composite. The impedance spectroscopic analysis demonstrates the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation behavior of both the CaO stabilized ZrO2@mullite composites. A negligible effect of electrode polarization is realized in these composites. The electronic band gap of conventional and plasma sintered CaO stabilized ZrO2@mullite composites is found to be around 3eV.

本研究涉及掺杂氧化钙的 ZrO2@ 莫来石复合材料的合成和与结构相关的电性能分析。研究采用了两种合成技术(固态反应路线和热等离子烧结),最终形成了由正方莫来石、四方氧化锆和单斜氧化锆混合相组成的复合材料。通过 XRD 分析获得了这些掺杂 CaO 的 ZrO2@ 莫来石复合材料的晶格参数、残余应变、平均晶粒尺寸和晶胞体积。证实了 t-ZrO2 相在室温下的稳定性。扫描电镜图像中观察到的多孔微观结构导致这些复合材料的介电常数值较低。在室温和选定的 1MHz 频率下,传统 CaO 稳定 ZrO2@mullite 复合材料的介电常数和损耗因子分别为 4.7 和 3.826 × 10-2,等离子烧结 CaO 稳定 ZrO2@mullite 复合材料的介电常数和损耗因子分别为 3.8 和 2.19 × 10-2。阻抗光谱分析表明,两种 CaO 稳定 ZrO2@mullite 复合材料都具有负电阻温度系数 (NTCR) 行为和非戴贝型弛豫行为。在这些复合材料中,电极极化的影响可以忽略不计。发现传统的和等离子烧结的氧化钙稳定 ZrO2@ 莫来石复合材料的电子带隙约为 3eV。
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引用次数: 0
Feedback Supersaturation Control Crystallization Process of Itaconic Acid 反馈过饱和控制衣康酸的结晶过程
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-09 DOI: 10.1002/crat.202300264
Hongyan Cui, Liangcheng Song, Sheng Lv, Chongqiang Zhu, Chunhui Yang

Seeding metastable zone of itaconic acid in water is determined using a laser dynamic detecting technique, based on which feedback supersaturation control is performed for the crystallization process. The crystallization is strictly confined within the metastable zone throughout the whole process to effectively inhibit the secondary nucleation and the strategy of seed loading is employed to avoid the burst of primary nucleation, resulting in the uniform particle size distribution. With the aid of solution information, continuous feedback control is conducted to keep the supersaturation at a high level accelerating the crystal growth, which significantly shortens the time consumption, and also the effect of seed amount is discussed in this work.

利用激光动态检测技术确定了衣康酸在水中的种子可变区,并在此基础上对结晶过程进行了反馈过饱和控制。在整个结晶过程中,将结晶严格限制在可转移区内,以有效抑制二次成核,并采用种子装载策略避免一次成核迸发,从而获得均匀的粒度分布。借助溶液信息进行连续反馈控制,使过饱和度保持在较高水平,从而加速了晶体生长,大大缩短了时间消耗,本工作还讨论了种子量的影响。
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引用次数: 0
Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single-Wafer Reactor through Orthogonal Test 通过正交试验分析水平单晶片反应器中硅外延生长的影响因素
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-09 DOI: 10.1002/crat.202300237
Chaozhong Li, Chengshuai Li, Hang Jiang, Hao Chen, Haisheng Fang

Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high-quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non-uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane-hydrogen (TCS-H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non-uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non-uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non-uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.

硅外延是半导体制造中沉积高质量硅薄膜的关键工艺。这项技术被广泛应用于集成电路的生产中,因为它能制造出具有更高性能特征的复杂电子结构。本研究对化学气相沉积(CVD)反应器进行了数值模拟,以探索工艺参数对硅生长速度和不均匀性的影响。研究涵盖了三氯硅烷-氢(TCS-H2)体系的气体反应和表面反应。通过改变过程参数,包括吸收体温度、入口气体速度、吸收体旋转速度、入口气体温度、上壁温度和 TCS 分子分数,系统地研究了气体流速、温度和主要成分的分布。此外,还引入了正交试验法来评估所有参数对生长不均匀性的影响。结果表明,入口气体速度和受体温度对生长速率和不均匀性有显著影响。硅生长速率主要受 TCS 分子分数的影响,而衬底的旋转速度主要影响生长的不均匀性。最后,我们提出了最佳方案,为在工业应用中改进硅化学气相沉积工艺提供了宝贵的指导。
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引用次数: 0
Refined Synthesis and Single Crystal Growth of PbGa2Se4 by Chemical Vapor Transport Method for Photodetection 利用化学气相传输法精细合成和单晶生长 PbGa2Se4 以用于光电探测
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-09 DOI: 10.1002/crat.202300276
Leilei Ji, Bao Xiao, Ziang Yin, Qihao Sun, Yadong Xu, Wanqi Jie

Ternary chalcogenide PbGa2Se4 with high resistivity, photosensitivity, and excellent nonlinear properties, exhibits a potential application in optoelectronic and nonlinear optical devices. However, the preparation of large-sized pure PbGa2Se4 crystals is challenging due to the presence of peritectic reaction L+α(Ga2Se3)PbGa2Se4${mathrm{L}} + {{alpha}}( {G{a}_2S{e}_3} ) to PbG{a}_2S{e}_4$ and a narrow homogeneity region. Here, a “quenching-annealing” method (quenching at 850 °C in ice water, and then annealing at 650 °C for 250 h by reheating) is developed to eliminate the PbSe second phase during the synthesis. Subsequently, the PbGa2Se4 single crystals are successfully grown using chemical vapor transport (CVT) with the I2 as the transport agent. The resulting crystal exhibits the crystal structure belonging to Fddd space group with the lattice parameters of a = 12.7192 Å, b = 21.2831 Å, and c = 21.5226 Å. Additionally, it possesses a wide bandgap (≈2.26 eV), high resistivity (6.59 × 1012 Ω·cm), and defect density calculated via space charge limited current measurement (SCLC) as 2.46 × 1011 cm−3. Photodetectors based on these as-grown crystals demonstrate exceptional photosensitivity along with a high detectivity (3.2 × 108 Jones).

三元共卤化物 PbGa2Se4 具有高电阻率、光敏性和优异的非线性特性,在光电和非线性光学器件中具有潜在的应用前景。然而,由于存在包晶反应 L+α(Ga2Se3)→PbGa2Se4${mathrm{L}},制备大尺寸纯 PbGa2Se4 晶体具有挑战性。+ {{alpha}}( {G{a}_2S{e}_3} ) →PbG{a}_2S{e}_4$ 和一个狭窄的均质区域。这里开发了一种 "淬火-退火 "方法(在 850 °C 的冰水中淬火,然后在 650 °C 的温度下退火 250 小时再加热),以消除合成过程中的 PbSe 第二相。随后,利用化学气相传输(CVT)技术,以 I2 为传输剂,成功地生长出了 PbGa2Se4 单晶。此外,它还具有宽带隙(≈2.26 eV)、高电阻率(6.59 × 1012 Ω-cm)以及通过空间电荷限流测量(SCLC)计算出的 2.46 × 1011 cm-3 的缺陷密度。基于这些生长晶体的光电探测器显示出卓越的光灵敏度和高探测率(3.2 × 108 琼斯)。
{"title":"Refined Synthesis and Single Crystal Growth of PbGa2Se4 by Chemical Vapor Transport Method for Photodetection","authors":"Leilei Ji,&nbsp;Bao Xiao,&nbsp;Ziang Yin,&nbsp;Qihao Sun,&nbsp;Yadong Xu,&nbsp;Wanqi Jie","doi":"10.1002/crat.202300276","DOIUrl":"10.1002/crat.202300276","url":null,"abstract":"<p>Ternary chalcogenide PbGa<sub>2</sub>Se<sub>4</sub> with high resistivity, photosensitivity, and excellent nonlinear properties, exhibits a potential application in optoelectronic and nonlinear optical devices. However, the preparation of large-sized pure PbGa<sub>2</sub>Se<sub>4</sub> crystals is challenging due to the presence of peritectic reaction <math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>L</mi>\u0000 <mo>+</mo>\u0000 <mi>α</mi>\u0000 <mrow>\u0000 <mo>(</mo>\u0000 <mrow>\u0000 <mi>G</mi>\u0000 <msub>\u0000 <mi>a</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <mi>S</mi>\u0000 <msub>\u0000 <mi>e</mi>\u0000 <mn>3</mn>\u0000 </msub>\u0000 </mrow>\u0000 <mo>)</mo>\u0000 </mrow>\u0000 <mo>→</mo>\u0000 <mi>P</mi>\u0000 <mi>b</mi>\u0000 <mi>G</mi>\u0000 <msub>\u0000 <mi>a</mi>\u0000 <mn>2</mn>\u0000 </msub>\u0000 <mi>S</mi>\u0000 <msub>\u0000 <mi>e</mi>\u0000 <mn>4</mn>\u0000 </msub>\u0000 </mrow>\u0000 <annotation>${mathrm{L}} + {{alpha}}( {G{a}_2S{e}_3} ) to PbG{a}_2S{e}_4$</annotation>\u0000 </semantics></math> and a narrow homogeneity region. Here, a “quenching-annealing” method (quenching at 850 °C in ice water, and then annealing at 650 °C for 250 h by reheating) is developed to eliminate the PbSe second phase during the synthesis. Subsequently, the PbGa<sub>2</sub>Se<sub>4</sub> single crystals are successfully grown using chemical vapor transport (CVT) with the I<sub>2</sub> as the transport agent. The resulting crystal exhibits the crystal structure belonging to <i>Fddd</i> space group with the lattice parameters of <i>a</i> = 12.7192 Å, <i>b</i> = 21.2831 Å, and <i>c</i> = 21.5226 Å. Additionally, it possesses a wide bandgap (≈2.26 eV), high resistivity (6.59 × 10<sup>12</sup> Ω·cm), and defect density calculated via space charge limited current measurement (SCLC) as 2.46 × 10<sup>11</sup> cm<sup>−3</sup>. Photodetectors based on these as-grown crystals demonstrate exceptional photosensitivity along with a high detectivity (3.2 × 10<sup>8</sup> Jones).</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 2","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139423976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
(Crystal Research and Technology 1/2024) (晶体研究与技术 1/2024)
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-08 DOI: 10.1002/crat.202370027

Cover image provided courtesy of Jianguang Zhou, Research Center for Analytical Instrumentation, Institute of Cyber-Systems and Control, State Key Laboratory of Industrial Control Technology, Zhejiang University, China.

封面图片由浙江大学工业控制技术国家重点实验室网络系统与控制研究所分析仪器研究中心周建光提供。
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引用次数: 0
Masthead: Crystal Research and Technology 1'2024 刊头:晶体研究与技术 1'2024
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-01-08 DOI: 10.1002/crat.202370028
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引用次数: 0
Molecular Docking and DFT Calculations of Anthracene: Insights from Quantum Chemical Methods 蒽的分子对接和 DFT 计算:量子化学方法的启示
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2023-12-26 DOI: 10.1002/crat.202300150
Rajendran Vijayakumar, Arangarajan Viji, Karuppaiya Vanasundari, Vadivel Balachandran, Antony Prabhu Arockia Dass

The molecular structure and spectroscopic data of (2E)-1-(Anthracen-9-yl)-3-(4-nitrophenyl)prop-2-en-1-one are obtained from DFT (B3LYP) with 6-31G(d,p) and 6-31G+(d,p) basis set calculations. The geometry of the molecule is fully optimized, vibrational spectra are calculated and fundamental vibrations are assigned on the basis of potential energy distribution (PED) of the vibrational modes. Molecular parameters such as bond length and bond angle are calculated with the same level of theory. The intramolecular charge transfer is calculated by means of natural bond orbital analysis (NBO). Besides, the molecular electrostatic potential (MEP), HOMO - LUMO, Fukui functions, RDG and ELF are performed. The biological effect is made on the basis of prediction of molecular docking results.

(2E)-1-(Anthracen-9-yl)-3-(4-nitrophenyl)prop-2-en-1-one 的分子结构和光谱数据是通过 DFT (B3LYP) 6-31G(d,p) 和 6-31G+(d,p) 基集计算获得的。对分子的几何形状进行了全面优化,计算了振动光谱,并根据振动模式的势能分布 (PED) 分配了基本振动。分子参数,如键长和键角,也是用相同的理论水平计算的。分子内电荷转移通过自然键轨道分析(NBO)进行计算。此外,还计算了分子静电势(MEP)、HOMO - LUMO、福井函数、RDG 和 ELF。根据分子对接结果预测了生物效应。
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引用次数: 0
Thermoluminescence Studies of High Energy X-Rays Irradiated Dy3+ Doped Mg0.65Zn0.3Al2O4:0.05Dy Nanophosphor 高能 X 射线辐照 Dy3+ 掺杂 Mg0.65Zn0.3Al2O4:0.05Dy 纳米磷的热致发光研究
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2023-12-25 DOI: 10.1002/crat.202300223
Pankaj Pathak, Manisha Singh, Pankaj Kumar Mishra, Ajay Mittal, Snehal Jani, Ranjeet Brajpuriya

The solution combustion synthesis method is employed to prepare Magnesium,  Zinc, Aluminate doped with dysprosium (Dy3+) using the general formula Mg(1-x-y) Zn(y)Al2O4:xDy (x = 0.05 and y = 0.3 mol%). From X-ray diffraction studies, the crystal structure belongs to a cubic close-packed spinel structure with space group Fd3ˉm and an average crystallite size is 26.18 nm. In the Fourier transform infrared spectra, the peaks at 683.69 cm−1, 503.12 cm−1 correspond to the AlO6 groups. The peak temperature (Tm) from the Thermoluminescent glow curve is recorded at 235°C, 237°C, and 235°C, at irradiation doses of 600 Gy, 800 Gy, and 1000 Gy, respectively. The kinetic parameters are evaluated from the thermoluminescent glow curve by calculating the activation energy (E), order of kinetics (b), and frequency factor (s−1). Nanophosphor Mg0.65Zn0.3Al2O4:0.05Dy shows sub linear dose relationship at doses 600–675 Gy and 925–1000 Gy. Further, at doses between 675 and 925 Gy, it shows a super linear relationship. The optimum activation energy (E) of 0.77–0.82 eV and negligible fading make it suitable for high radiation thermoluminescent dosimetry.

采用溶液燃烧合成法制备了掺杂镝(Dy3+)的镁锌铝酸盐,通式为 Mg(1-x-y) Zn(y)Al2O4:xDy (x = 0.05 和 y = 0.3 mol%)。根据 X 射线衍射研究,其晶体结构属于立方紧密堆积尖晶石结构,空间群为 Fd3ˉm,平均结晶尺寸为 26.18 nm。在傅立叶变换红外光谱中,683.69 cm-1 和 503.12 cm-1 处的峰值与 AlO6 基团相对应。在 600 Gy、800 Gy 和 1000 Gy 的辐照剂量下,热释辉曲线的峰值温度(Tm)分别为 235°C、237°C 和 235°C。通过计算活化能(E)、动力学阶次(b)和频率因子(s-1),从热释光辉光曲线中评估了动力学参数。在剂量为 600-675 Gy 和 925-1000 Gy 时,纳米磷 Mg0.65Zn0.3Al2O4:0.05Dy 显示出亚线性剂量关系。此外,在剂量介于 675 和 925 Gy 之间时,它显示出超线性关系。0.77-0.82 eV 的最佳活化能(E)和可忽略的衰减使其适用于高辐射热发光剂量测定。
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引用次数: 0
期刊
Crystal Research and Technology
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