Ultrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium-based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra-purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra-pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current-day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized
{"title":"A Review on the Zone Refining Process Technology toward Ultra-Purification of Gallium for GaAs/GaN-based Optoelectronic Device Applications","authors":"Kaustab Ghosh, V. N. Mani","doi":"10.1002/crat.202300347","DOIUrl":"https://doi.org/10.1002/crat.202300347","url":null,"abstract":"<p>Ultrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium-based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra-purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra-pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current-day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141565885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The full potential linearized augmented plane wave (FP-LAPW) method is used to compute structural, electronic, and optical properties of III-V semiconductor ternary alloys GaP1-xSbx (0≤x≤1) using first-principle calculations within density functional theory. To calculate the ground state parameters of the structure, the energy exchange-correlation Wu-cohen generalized gradient approximation is employed in the wiek2k program. The Tran–Blaha-modified Becke–Johnson (TB-mBJ) pseudopotential is employed in addition to the Wu-Cohen generalised gradient approximation to achieve a precise bandgap. After this, WC-mBJ is used to examine optical properties such as real and imaginary parts of the dielectric constant, and energy loss. This study illustrates the nonlinear dependency on the various Sb compositions by examining the composition impacts on the bandgap, bulk modulus, and lattice constant. Using WC-mBJ, the estimated band structures for alloys GaP0.75Sb0.25, GaP0.50Sb0.50, and GaP0.25Sb0.75 show direct energy bandgaps of 2.008 eV (617 nm), 1.482 eV (836 nm), and 1.055 eV (1174 nm), respectively. As a result, this material system has enormous potential for use in applications spanning the visible to infrared spectrum.
{"title":"Opto-Electronic Properties of Gap1-xSbx Alloys for IR Applications","authors":"Priya Chaudhary, Amit Rathi, Amit Kumar Singh","doi":"10.1002/crat.202300346","DOIUrl":"10.1002/crat.202300346","url":null,"abstract":"<p>The full potential linearized augmented plane wave (FP-LAPW) method is used to compute structural, electronic, and optical properties of III-V semiconductor ternary alloys GaP<sub>1-x</sub>Sb<sub>x</sub> (0≤x≤1) using first-principle calculations within density functional theory. To calculate the ground state parameters of the structure, the energy exchange-correlation Wu-cohen generalized gradient approximation is employed in the wiek2k program. The Tran–Blaha-modified Becke–Johnson (TB-mBJ) pseudopotential is employed in addition to the Wu-Cohen generalised gradient approximation to achieve a precise bandgap. After this, WC-mBJ is used to examine optical properties such as real and imaginary parts of the dielectric constant, and energy loss. This study illustrates the nonlinear dependency on the various Sb compositions by examining the composition impacts on the bandgap, bulk modulus, and lattice constant. Using WC-mBJ, the estimated band structures for alloys GaP<sub>0.75</sub>Sb<sub>0.25</sub>, GaP<sub>0.50</sub>Sb<sub>0.50</sub>, and GaP<sub>0.25</sub>Sb<sub>0.75</sub> show direct energy bandgaps of 2.008 eV (617 nm), 1.482 eV (836 nm), and 1.055 eV (1174 nm), respectively. As a result, this material system has enormous potential for use in applications spanning the visible to infrared spectrum.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141352428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Magnesium and sulfate are a determinant key in CaCO3 mineralization. However, the works of the literature have failed to provide a clear understanding of how these ions influence the nucleation-growth of CaCO3 precipitation. Our study uses an electrochemical method, having for principle to impose a dissolved oxygen reduction potential on gold (111) films. This technique that allows the exclusive and controlled crystallization of epitaxial calcite established an ideal system for the study of foreign ions influence. The polymorph, composition and morphology of crystals are characterized using scanning electron microscopy (SEM) coupled with X-ray energy dispersive spectroscopy (EDS) and Raman spectroscopy. The results demonstrate that the increase of calcium concentration in calcocarbonic pure solution enhances the nucleation and then the growth of calcite crystals without affecting their morphology and their orientation. However, the magnesium directly modifies the surface morphology of calcite as a consequence of Mg substitution to calcium ions and the inhibitive effect of magnesium is assured by an incorporation mechanism. In the matter of sulfate ions influence, the experimental results indicate that SO42− slows down the epitaxial calcite nucleation by substituting itself to carbonate ions preferentially in the center of the crystals facets causing an enlargement of the lattice parameter.
{"title":"Epitaxial Calcite Morphology Modified in the Presence of Magnesium and Sulfate Ions","authors":"Hassiba Tighidet, Suzanne Joiret, Nabila Cherchour, Naima Brinis, Kahina Aoudia","doi":"10.1002/crat.202400044","DOIUrl":"10.1002/crat.202400044","url":null,"abstract":"<p>Magnesium and sulfate are a determinant key in CaCO<sub>3</sub> mineralization. However, the works of the literature have failed to provide a clear understanding of how these ions influence the nucleation-growth of CaCO<sub>3</sub> precipitation. Our study uses an electrochemical method, having for principle to impose a dissolved oxygen reduction potential on gold (111) films. This technique that allows the exclusive and controlled crystallization of epitaxial calcite established an ideal system for the study of foreign ions influence. The polymorph, composition and morphology of crystals are characterized using scanning electron microscopy (SEM) coupled with X-ray energy dispersive spectroscopy (EDS) and Raman spectroscopy. The results demonstrate that the increase of calcium concentration in calcocarbonic pure solution enhances the nucleation and then the growth of calcite crystals without affecting their morphology and their orientation. However, the magnesium directly modifies the surface morphology of calcite as a consequence of Mg substitution to calcium ions and the inhibitive effect of magnesium is assured by an incorporation mechanism. In the matter of sulfate ions influence, the experimental results indicate that SO<sub>4</sub><sup>2−</sup> slows down the epitaxial calcite nucleation by substituting itself to carbonate ions preferentially in the center of the crystals facets causing an enlargement of the lattice parameter.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anton Suslov, Vasilisa Gerega, Arkadi Rodionov, Mikhail Fedoseev, Vladimir Komarov, Vladimir Grabov
Due to the sensitivity of the electronic structure of semi-metals to small distortions of the crystal lattice, the study of the electrical and galvanomagnetic properties of bismuth films requires taking into account the deformation that occurs in the film-substrate system due to the difference in the thermal expansion of the film and substrate materials. The magnitude of these deformations plays an important role in analyzing the temperature dependencies of the transport properties of charge carriers. The paper presents an experimental study of the magnitude of deformation of bismuth films on various substrates at 300 and 77 K using X-ray diffraction. Changes in the lattice constant