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A Review on the Zone Refining Process Technology toward Ultra-Purification of Gallium for GaAs/GaN-based Optoelectronic Device Applications 基于砷化镓/氮化镓的光电器件应用中实现镓超纯化的区域精炼工艺技术综述
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-17 DOI: 10.1002/crat.202300347
Kaustab Ghosh, V. N. Mani

Ultrapure gallium up to 99.9999%/ 99.99999% (6N/7N) purity level is a highly demanding material needed for the growth of gallium-based group III–V semiconductor compounds and optoelectronic devices. However, general extraction of gallium from Bayer liquor contains high impurity content and ultra-purification of the same cannot be accomplished by a single step. Thus, the purpose of this review is to assess various purification processes for the production of ultra-pure gallium and to critically examine its applications in the optoelectronics industry. Through this research survey, it is found that zone refining of the zone melting process stands tall over other methods in purifying materials even up to 13N. Hence, scientists are adopting detailed mathematical models and simulation tools for designing unique zone refining systems for material purification. Current-day technology even adopts intelligence methods such as machine learning, which sheds light on the importance of different zone refining parameters that influence the purification process. Here, the practical aspects of zone refining and how the feedback from the theoretical models or performance prediction through intelligence methods can be effectively incorporated into practice have also been emphasized

纯度高达 99.9999%/99.99999%(6N/7N)的超纯镓是生长镓基 III-V 族半导体化合物和光电设备所需的高要求材料。然而,一般从拜耳液中提取的镓杂质含量较高,无法通过单一步骤实现超纯化。因此,本综述旨在评估生产超纯镓的各种纯化工艺,并认真研究其在光电子行业的应用。通过这项研究调查,我们发现区熔工艺的区带精炼在提纯材料(甚至高达 13N)方面比其他方法更胜一筹。因此,科学家们正在采用详细的数学模型和模拟工具来设计独特的材料提纯分区精炼系统。当今的技术甚至采用了机器学习等智能方法,从而揭示了影响提纯过程的不同带式精炼参数的重要性。这里还强调了分区精炼的实用性,以及如何将理论模型的反馈或通过智能方法进行的性能预测有效地融入到实践中。
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引用次数: 0
Opto-Electronic Properties of Gap1-xSbx Alloys for IR Applications 用于红外应用的 Gap1-xSbx 合金的光电特性
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-12 DOI: 10.1002/crat.202300346
Priya Chaudhary, Amit Rathi, Amit Kumar Singh

The full potential linearized augmented plane wave (FP-LAPW) method is used to compute structural, electronic, and optical properties of III-V semiconductor ternary alloys GaP1-xSbx (0≤x≤1) using first-principle calculations within density functional theory. To calculate the ground state parameters of the structure, the energy exchange-correlation Wu-cohen generalized gradient approximation is employed in the wiek2k program. The Tran–Blaha-modified Becke–Johnson (TB-mBJ) pseudopotential is employed in addition to the Wu-Cohen generalised gradient approximation to achieve a precise bandgap. After this, WC-mBJ is used to examine optical properties such as real and imaginary parts of the dielectric constant, and energy loss. This study illustrates the nonlinear dependency on the various Sb compositions by examining the composition impacts on the bandgap, bulk modulus, and lattice constant. Using WC-mBJ, the estimated band structures for alloys GaP0.75Sb0.25, GaP0.50Sb0.50, and GaP0.25Sb0.75 show direct energy bandgaps of 2.008 eV (617 nm), 1.482 eV (836 nm), and 1.055 eV (1174 nm), respectively. As a result, this material system has enormous potential for use in applications spanning the visible to infrared spectrum.

利用密度泛函理论中的第一原理计算,采用全势能线性化增强平面波(FP-LAPW)方法计算了 III-V 族半导体三元合金 GaP1-xSbx (0≤x≤1) 的结构、电子和光学特性。为了计算该结构的基态参数,在 wiek2k 程序中采用了能量交换相关吴-科恩广义梯度近似法。除了吴-科恩广义梯度近似之外,还采用了 Tran-Blaha 修正贝克-约翰逊(TB-mBJ)伪势,以获得精确的带隙。之后,WC-mBJ 被用于研究介电常数的实部和虚部以及能量损失等光学特性。本研究通过检验成分对带隙、体模量和晶格常数的影响,说明了各种锑成分的非线性依赖性。使用 WC-mBJ,合金 GaP0.75Sb0.25、GaP0.50Sb0.50 和 GaP0.25Sb0.75 的估计带状结构分别显示出 2.008 eV(617 nm)、1.482 eV(836 nm)和 1.055 eV(1174 nm)的直接能带隙。因此,这种材料系统在可见光到红外光谱的应用中具有巨大的潜力。
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引用次数: 0
Epitaxial Calcite Morphology Modified in the Presence of Magnesium and Sulfate Ions 镁离子和硫酸根离子存在时外延方解石形态的改变
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-12 DOI: 10.1002/crat.202400044
Hassiba Tighidet, Suzanne Joiret, Nabila Cherchour, Naima Brinis, Kahina Aoudia

Magnesium and sulfate are a determinant key in CaCO3 mineralization. However, the works of the literature have failed to provide a clear understanding of how these ions influence the nucleation-growth of CaCO3 precipitation. Our study uses an electrochemical method, having for principle to impose a dissolved oxygen reduction potential on gold (111) films. This technique that allows the exclusive and controlled crystallization of epitaxial calcite established an ideal system for the study of foreign ions influence. The polymorph, composition and morphology of crystals are characterized using scanning electron microscopy (SEM) coupled with X-ray energy dispersive spectroscopy (EDS) and Raman spectroscopy. The results demonstrate that the increase of calcium concentration in calcocarbonic pure solution enhances the nucleation and then the growth of calcite crystals without affecting their morphology and their orientation. However, the magnesium directly modifies the surface morphology of calcite as a consequence of Mg substitution to calcium ions and the inhibitive effect of magnesium is assured by an incorporation mechanism. In the matter of sulfate ions influence, the experimental results indicate that SO42− slows down the epitaxial calcite nucleation by substituting itself to carbonate ions preferentially in the center of the crystals facets causing an enlargement of the lattice parameter.

镁和硫酸盐是 CaCO3 矿化的决定性关键因素。然而,文献研究未能清楚地了解这些离子如何影响 CaCO3 沉淀的成核-生长。我们的研究采用了一种电化学方法,其原理是在金(111)薄膜上施加溶解氧还原电位。这种技术允许外延方解石的独家可控结晶,为研究外来离子的影响建立了一个理想的系统。利用扫描电子显微镜(SEM)、X 射线能量色散光谱(EDS)和拉曼光谱对晶体的多晶体、成分和形态进行了表征。结果表明,钙碳酸盐纯溶液中钙浓度的增加会促进方解石晶体的成核和生长,但不会影响其形态和取向。然而,由于镁对钙离子的替代作用,镁直接改变了方解石的表面形态,而镁的抑制作用是通过一种结合机制来保证的。在硫酸根离子的影响方面,实验结果表明,SO42- 在晶体面中心优先取代碳酸根离子,导致晶格参数增大,从而减缓了方解石的外延成核。
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引用次数: 0
Changes in the Crystal Lattice Parameters of Bismuth Films on Substrates with Different Thermal Expansion 不同热膨胀率基底上铋薄膜晶格参数的变化
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-12 DOI: 10.1002/crat.202300339
Anton Suslov, Vasilisa Gerega, Arkadi Rodionov, Mikhail Fedoseev, Vladimir Komarov, Vladimir Grabov

Due to the sensitivity of the electronic structure of semi-metals to small distortions of the crystal lattice, the study of the electrical and galvanomagnetic properties of bismuth films requires taking into account the deformation that occurs in the film-substrate system due to the difference in the thermal expansion of the film and substrate materials. The magnitude of these deformations plays an important role in analyzing the temperature dependencies of the transport properties of charge carriers. The paper presents an experimental study of the magnitude of deformation of bismuth films on various substrates at 300 and 77 K using X-ray diffraction. Changes in the lattice constant c$c$ of crystallites, the trigonal axis of which is perpendicular to the film plane, depending on the substrate material, are obtained. A comparison between the assessment of the deformation of these crystallites in the film plane based on Hooke's law and the difference in the coefficients thermal expansion of the film and substrate materials is made.

由于半金属的电子结构对晶格的微小畸变非常敏感,因此在研究铋薄膜的电学和电磁学特性时,需要考虑由于薄膜和基底材料的热膨胀差异而在薄膜-基底系统中产生的变形。这些变形的大小在分析电荷载流子传输特性的温度依赖性时起着重要作用。本文利用 X 射线衍射技术,对 300 K 和 77 K 时不同基底上铋薄膜的变形量进行了实验研究。根据基底材料的不同,晶体的晶格常数也会发生变化,晶体的三棱轴垂直于薄膜平面。根据胡克定律对这些晶体在薄膜平面上的变形进行的评估与薄膜和基底材料热膨胀系数的差异进行了比较。
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引用次数: 0
Masthead: Crystal Research and Technology 6'2024 刊头:晶体研究与技术 6'2024
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-05 DOI: 10.1002/crat.202470036
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引用次数: 0
(Crystal Research and Technology 6/2024) (水晶研究与技术 6/2024)
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-05 DOI: 10.1002/crat.202470035

Cover image provided courtesy of Jianguang Zhou, Research Center for Analytical Instrumentation, Institute of Cyber-Systems and Control, State Key Laboratory of Industrial Control Technology, Zhejiang University, China.

封面图片由浙江大学工业控制技术国家重点实验室网络系统与控制研究所分析仪器研究中心周建光提供。
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引用次数: 0
Structure, Characterizations, Photocurrent Response, and Theoretical Study of One Chained Hybrid Iodoplumbate 一链杂化碘铂酸盐的结构、特性、光电流响应和理论研究
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-04 DOI: 10.1002/crat.202400060
Shuyue Xie, Jinting Wu, Baohan Li, Huicong Liu, Hao Wang, Jun Li, Bo Zhang

Exploring new haloplumbate hybrids and understanding the structure-activity relationships are of great significance for further promoting their applications in the photovoltaic fields. Herein, with the in situ-formed [Hmd]+ (md = 2-methyl-1,3-diazinane) templates, a new organic–inorganic hybrid iodoplumbate, namely [Hmd]PbI3 (1), is successfully constructed and then structurally characterized using multiple technical approaches. X-ray crystallography studies show that compound 1 features the typical 1D chain-like motifs of [Pb2I6]n2n, generating the 3D supermolecular network by the extensive hydrogen bond interactions. Interestingly, compound 1 exhibits the semiconductive behavior, with an optical band gap of 2.72 eV. More attractively, the title compound has good photoelectric switching performances under the alternating light irradiation, whose photocurrent densities compete well with or surpass those of many metal halide counterparts. Further theoretical analyses reveal that the title compound has a more dispersive band structure (especially the value band) that facilitates the transport of charge carriers, which may be the main origin of its excellent optoelectronic performance. Presented in this paper also bring the studies of Hirshfeld surface, X-ray photoelectron spectroscopy (XPS) as well as thermogravimetric analysis.

探索新的卤铌酸盐杂化物并了解其结构-活性关系对进一步促进其在光伏领域的应用具有重要意义。本文利用原位形成的[Hmd]+(md = 2-甲基-1,3-二嗪)模板,成功构建了一种新型有机-无机杂化碘铂酸盐,即[Hmd]PbI3 (1),并通过多种技术方法对其进行了结构表征。X 射线晶体学研究表明,化合物 1 具有 [Pb2I6]n2n- 典型的一维链状结构,通过广泛的氢键相互作用生成三维超分子网络。有趣的是,化合物 1 具有半导体行为,光带隙为 2.72 eV。更吸引人的是,标题化合物在交替光照射下具有良好的光电开关性能,其光电流密度可与许多金属卤化物相媲美,甚至超过它们。进一步的理论分析表明,标题化合物具有更分散的能带结构(尤其是值能带),有利于电荷载流子的传输,这可能是其优异光电性能的主要原因。本文还介绍了对 Hirshfeld 表面、X 射线光电子能谱 (XPS) 以及热重分析的研究。
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引用次数: 0
Synthesis, Characterization, and Application of a Polyoxometalates-Based CuII Complex for Efficient Catalytic Oxidation and Electrochemical Detection 用于高效催化氧化和电化学检测的聚氧化金属盐基 CuII 配合物的合成、表征和应用
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-06-03 DOI: 10.1002/crat.202400063
Xiaohui Liu, Muzi Li, Libo Zhang, Xiaoyan Zhang, Ru Xiao, Na Xu, Hui Li, Xiuli Wang

The development of eco-friendly, high-efficiency polyoxometalates (POMs) catalysts is vital for advancing catalytic oxidation and electrochemical detection in environmental protection. Herein, a POM-based CuII-containing complex with the molecular formula [H(4-AP)]8[Cu2(H2O)4(P2Mo5O23)2]·8H2O (1) (4-AP = 4-aminopyridine) is synthesized using the hydrothermal method, and the crystal structure is determined by single X-ray diffraction (SXRD), infrared (IR) spectroscopy, and powder X-ray diffraction (PXRD). Structurally, complex 1 exhibits a one dimension (1D) chain arrangement, composed of CuII ions and Strandberg-type (P2Mo5O23)6− anionic clusters. These 1D chains are further interconnected through [H(4-AP)]+ ligands, resulting in the formation of a two dimension (2D) supramolecular network. Complex 1 serves as an outstanding heterogeneous catalyst for the oxidation of methyl phenyl sulfide (MPS), demonstrating a remarkable conversion rate of 99% for MPS and a selectivity of 98% toward methyl phenyl sulfoxide (MPSO). In addition to its catalytic capabilities, complex 1 is also employed in the electrochemical detection of FeIII and CrVI ions, with low limits of detection (LODs) at 4.92 µm for FeIII and 7.82 µM for CrVI.

开发环保、高效的聚氧化金属(POMs)催化剂对于推进环境保护中的催化氧化和电化学检测至关重要。本文采用水热法合成了分子式为 [H(4-AP)]8[Cu2(H2O)4(P2Mo5O23)2]-8H2O(1)(4-AP = 4-氨基吡啶)的基于 POM 的含 CuII 配合物,并通过单 X 射线衍射 (SXRD)、红外光谱 (IR) 和粉末 X 射线衍射 (PXRD) 确定了其晶体结构。从结构上看,复合物 1 呈一维(1D)链状排列,由 CuII 离子和 Strandberg 型 (P2Mo5O23)6- 阴离子团簇组成。这些一维链通过[H(4-AP)]+ 配体进一步相互连接,从而形成二维(2D)超分子网络。配合物 1 是一种出色的异相催化剂,可用于甲基苯基硫醚(MPS)的氧化,对 MPS 的转化率高达 99%,对甲基苯基亚砜(MPSO)的选择性高达 98%。除了催化能力,复合物 1 还可用于电化学检测 FeIII 和 CrVI 离子,FeIII 和 CrVI 的检测限分别为 4.92 µm 和 7.82 µM。
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引用次数: 0
Crystalline Transformation of Glycolide Induced by Organic Solvents and Relative Humidity 有机溶剂和相对湿度诱导的乙二酸结晶转变
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-05-30 DOI: 10.1002/crat.202400001
Liang Wen, Tian Yin, Ya-Qi Xue, Yi-Zhen Zhao, Xiao Liu, Jian-Gong Ma

As a biodegradable and biocompatible polymer material, polyglycolic acid is attracting more and more attention in the field of polymeric and biomedical materials. Consequently, the study of the transformation between different crystal forms of glycolide, the monomer of polyglycolic acid, is of great importance, because crystal forms of glycolide determine the stabilities and properties of polyglycolic acid products polymerized under different conditions in industry. Herein, this article reports the synthesis and crystallization of α- and β-glycolide controlled by the type of organic solvents and/or temperatures, during which an intermediate crystal form of β′-glycolide is newly observed. The transformation between α-, β-, and β′-glycolide is investigated in detail, and the stabilities of different crystal forms are illustrated via the controlled experiments under different relative humidity (RH) as well as the theoretical calculations, which should provide fundamental concepts and guidance for the industrial production of glycolide and optimization of polyglycolic acid products.

聚羟基乙酸作为一种可生物降解且具有生物相容性的聚合物材料,在聚合物和生物医学材料领域受到越来越多的关注。因此,研究聚羟基乙酸的单体甘内酯不同晶型之间的转化具有重要意义,因为甘内酯的晶型决定了工业中不同条件下聚合的聚羟基乙酸产品的稳定性和性能。本文报告了受有机溶剂类型和/或温度控制的α-和β-缩水甘油醚的合成和结晶,在此过程中新观察到了β′-缩水甘油醚的中间晶体形式。详细研究了 α-、β- 和 β′-甘醇醚之间的转变,并通过不同相对湿度(RH)下的对照实验和理论计算说明了不同晶型的稳定性,为工业化生产甘醇醚和优化聚乙二醇酸产品提供了基本概念和指导。
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引用次数: 0
Characterization of InN Grown Directly on Sapphire Substrate Using Plasma-Enhanced Metal Organic Chemical Vapor Deposition 利用等离子体增强金属有机化学气相沉积技术在蓝宝石衬底上直接生长的氮化铟的特性分析
IF 1.5 4区 材料科学 Q3 Chemistry Pub Date : 2024-05-30 DOI: 10.1002/crat.202400124
Takahiro Gotow, Naoto Kumagai, Tetsuji Shimizu, Hisashi Yamada, Toshihide Ide, Tatsuro Maeda

Direct InN growth is demonstrated and characterized on a sapphire (Al2O3) substrate by plasma-enhanced metal–organic chemical vapor deposition using high-density nitrogen (N2) microstrip-line microwave plasma. N2 plasma irradiation at 650 °C for 20 min forms AlN on Al2O3 substrate. No peak regarding metallic In droplets is detected from InN/Al2O3 regardless of N2 plasma irradiation. InN is found to be rotated 30° with their a-axis oriented to become [101¯0]$[ {10bar{1}0} ]$ InN // [112¯0]$[ {11bar{2}0} ]$ Al2O3. The transition layers are confirmed at the InN/Al2O3 interface regardless of N2 plasma irradiation. The surface of InN consisted of large undulations with root mean square values >30 nm, suggesting that strain relaxation introduces misfit dislocations.

通过使用高密度氮气(N2)微带线微波等离子体,在蓝宝石(Al2O3)衬底上进行等离子体增强金属有机化学气相沉积,证明了氮化铟的直接生长及其特性。N2 等离子体在 650 °C 下辐照 20 分钟,在 Al2O3 基底上形成 AlN。无论 N2 等离子体辐照与否,在 InN/Al2O3 上都检测不到有关金属 In 液滴的峰值。发现 InN 以其 a 轴方向旋转 30°,成为 InN // Al2O3。无论 N2 等离子体辐照与否,均可在 InN/Al2O3 界面确认过渡层。InN 表面存在均方根值为 30 nm 的大起伏,表明应变松弛引入了错位。
{"title":"Characterization of InN Grown Directly on Sapphire Substrate Using Plasma-Enhanced Metal Organic Chemical Vapor Deposition","authors":"Takahiro Gotow,&nbsp;Naoto Kumagai,&nbsp;Tetsuji Shimizu,&nbsp;Hisashi Yamada,&nbsp;Toshihide Ide,&nbsp;Tatsuro Maeda","doi":"10.1002/crat.202400124","DOIUrl":"10.1002/crat.202400124","url":null,"abstract":"<p>Direct InN growth is demonstrated and characterized on a sapphire (Al<sub>2</sub>O<sub>3</sub>) substrate by plasma-enhanced metal–organic chemical vapor deposition using high-density nitrogen (N<sub>2</sub>) microstrip-line microwave plasma. N<sub>2</sub> plasma irradiation at 650 °C for 20 min forms AlN on Al<sub>2</sub>O<sub>3</sub> substrate. No peak regarding metallic In droplets is detected from InN/Al<sub>2</sub>O<sub>3</sub> regardless of N<sub>2</sub> plasma irradiation. InN is found to be rotated 30° with their <i>a</i>-axis oriented to become <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mo>[</mo>\u0000 <mrow>\u0000 <mn>10</mn>\u0000 <mover>\u0000 <mn>1</mn>\u0000 <mo>¯</mo>\u0000 </mover>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <mo>]</mo>\u0000 </mrow>\u0000 <annotation>$[ {10bar{1}0} ]$</annotation>\u0000 </semantics></math> InN // <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mo>[</mo>\u0000 <mrow>\u0000 <mn>11</mn>\u0000 <mover>\u0000 <mn>2</mn>\u0000 <mo>¯</mo>\u0000 </mover>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <mo>]</mo>\u0000 </mrow>\u0000 <annotation>$[ {11bar{2}0} ]$</annotation>\u0000 </semantics></math> Al<sub>2</sub>O<sub>3</sub>. The transition layers are confirmed at the InN/Al<sub>2</sub>O<sub>3</sub> interface regardless of N<sub>2</sub> plasma irradiation. The surface of InN consisted of large undulations with root mean square values &gt;30 nm, suggesting that strain relaxation introduces misfit dislocations.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 7","pages":""},"PeriodicalIF":1.5,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141189126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Crystal Research and Technology
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