Double perovskite materials present significant advantages in terms of stability, environmental safety, tunability, charge dynamics and efficiency, making them a promising avenue for future solar cell technologies. In the present study, the numerical simulation for the photovoltaic performance of lead-free halide double perovskites (HDPs) X2AgBiI6 (where X = Rb, K) estimated using the one-dimensional solar cell capacitance simulator (SCAPS-1D) package is discussed in detail. A range of electron transport layers (ETLs) such as zinc oxide (ZnO), titanium oxide (TiO2), fullerene (C60), indium gallium zinc oxide (IGZO), tin oxide (SnO2) and [6,6]-phenyl-C61-butyric-acid methyl ester was varied to identify the best fit. Similarly, the hole transport layers (HTLs), namely cuprous oxide (Cu2O), cuprous thiocyanate (CuSCN), copper antimony sulphide (CuSbS2), nickel oxide (NiO), poly(3-hexylthiophene), PEDOT: PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulphonate), spiro-MeOTAD (2,2′,7,7′-tetrakis[N,N-di (4-methoxyphenyl)amino]-9,9′-spirobifluorene), CuI (copper iodide), CuO (cupric oxide), V2O5 (vanadium pentoxide), CBTS (copper-barium-tin-sulphide) and CFTS (copper ferrous tin sulphide), respectively, were extensively studied in solar device configuration. The influence of various physical parameters, such as different layers, thickness of ETL and HTL and temperature, was investigated. The performance of the proposed HDPs improved with increases in layer thickness and decreases in temperature. The proposed studies may pave the way towards more stable and efficient HDPs for futuristic photovoltaics.