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Remarkable enhancement in adsorption capacity of methylene blue by hydrothermally processed MoSe2 nanosheets for environmental application 水热加工的 MoSe2 纳米片显著提高了亚甲基蓝的吸附能力,可用于环境领域
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-23 DOI: 10.1007/s12034-024-03307-z
Piyush Siroha, Vartika Khandelwal, Davender Singh,  Ramovatar, Jitendra Gangwar

In the present study, we have developed molybdenum diselenide (MoSe2) nanosheets via an effective hydrothermal process by varying synthesis temperatures in a high-yield production. XRD results illustrate that all the products indexed to a hexagonal crystal phase of MoSe2 (2H-MoSe2) with crystallite sizes around 7 nm. TEM and HRTEM images confirmed a high-quality crystalline feature of MoSe2 nanosheets. Interestingly, the identified interplanar spacing of 0.61 nm corresponds to a well-organized atomic-scale arrangement with (hkil: 0002) plane of 2H-MoSe2 crystal. Additionally, Moiré fringes of different periodicities are clearly visible in some crystalline regions suggesting that MoSe2 nanosheets are well crystallized. The selected area electron diffraction patterns elucidate ring-like diffraction patterns indicating the polycrystalline nature of all the prepared MoSe2 nanosheets. UV–Vis absorption spectra scrutinize the mechanism for photo-response phenomenon and the observed excitonic peaks evidently demonstrate that the synthesized MoSe2 is in a semiconducting 2H phase with an optical bandgap ranging from 1.78 to 1.93 eV. Moreover, MoSe2 nanosheets possess a prominent methylene blue (MB) dye adsorption capacity of 50–70% and 54–83% in lower and higher adsorption times, respectively. In a nutshell, this study reveals the potential environmental application in the adsorption of organic dye MB in wastewater of hydrothermally produced MoSe2 nanosheets with structural and optical properties.

在本研究中,我们采用一种有效的水热法工艺,通过改变合成温度,开发出了高产率的二硒化钼(MoSe2)纳米片。XRD 结果表明,所有产品都属于六方晶系的 MoSe2(2H-MoSe2),晶粒大小约为 7 纳米。TEM 和 HRTEM 图像证实了 MoSe2 纳米片的高质量晶体特征。有趣的是,已确定的 0.61 nm 的平面间距与 2H-MoSe2 晶体的 (hkil: 0002) 平面的原子级有序排列相对应。此外,在某些结晶区域还能清晰地看到不同周期性的莫伊里条纹,这表明 MoSe2 纳米片结晶良好。选区电子衍射图谱阐明了环状衍射图谱,表明所有制备的 MoSe2 纳米片都具有多晶性质。紫外-可见吸收光谱仔细研究了光反应现象的机理,观察到的激子峰明显表明合成的 MoSe2 处于半导体 2H 相,其光带隙在 1.78 至 1.93 eV 之间。此外,MoSe2 纳米片具有显著的亚甲基蓝(MB)染料吸附能力,在较低和较高的吸附时间内,吸附能力分别为 50-70% 和 54-83%。总之,本研究揭示了水热法制备的具有结构和光学特性的 MoSe2 纳米片在吸附废水中的有机染料 MB 方面的潜在环境应用。
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引用次数: 0
Effect of annealing temperatures on phase evolution and magnetic properties of Co35Cr5Fe10Ni30Ti5Al15 high entropy alloys 退火温度对 Co35Cr5Fe10Ni30Ti5Al15 高熵合金相变和磁性能的影响
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-23 DOI: 10.1007/s12034-024-03288-z
Priyanka Kumari, Rohit R Shahi

Design and development of novel high entropy alloys (HEAs) having balance magnetic properties with other functional properties are vital for industrial applications of these alloys. In this study, a novel Co35Cr5Fe10Ni30Ti5Al15 HEA was synthesized through mechanical alloying and studied for phase evolution and its effects on magnetic properties with annealing at different temperatures. As-synthesized HEA has a major fcc phase with minor concentrations of bcc and R phases. The as-synthesized HEA is also annealed at different temperatures of 500, 700 and 900°C and found that the phase identity of formed phases maintained after annealing. However, for HEA annealed at 1000°C, slight amount of new σ-phase has formed along with initial phases. Values of Ms and Hc were found to be 75 emu g−1 and 18 Oe for as-synthesized Co35Cr5Fe10Ni30Ti5Al15 HEA. We found that after annealing at different temperatures, magnetic properties of Co35Cr5Fe10Ni30Ti5Al15 HEA show significant improvement. Co35Cr5Fe10Ni30Ti5Al15 HEA annealed at 900°C exhibited good soft magnetic characteristics with high Ms (99 emu g−1), low values of Hc (3.8 Oe) and Mr (0.45 emu g−1), as compared to other samples developed in the present study. Thus, designed and developed 900°C annealed Co35Cr5Fe10Ni30Ti5Al15 HEA can be further used for magnetic switching applications due to the high value of Ms and low value of Mr.

设计和开发兼具磁性能和其他功能特性的新型高熵合金(HEAs)对这些合金的工业应用至关重要。本研究通过机械合金化方法合成了新型 Co35Cr5Fe10Ni30Ti5Al15 高熵合金,并研究了其相变及其在不同温度下退火对磁性能的影响。合成的 HEA 具有主要的 fcc 相,以及少量的 bcc 相和 R 相。在 500、700 和 900°C 的不同温度下对合成的 HEA 进行退火处理后发现,退火后形成的相的相性保持不变。但是,在 1000°C 退火的 HEA 中,除了初始相之外,还形成了少量新的σ相。合成的 Co35Cr5Fe10Ni30Ti5Al15 HEA 的 Ms 值和 Hc 值分别为 75 emu g-1 和 18 Oe。我们发现,在不同温度下退火后,Co35Cr5Fe10Ni30Ti5Al15 HEA 的磁性能有明显改善。与本研究中开发的其他样品相比,在 900°C 退火的 Co35Cr5Fe10Ni30Ti5Al15 HEA 具有良好的软磁特性,Ms 值高(99 emu g-1),Hc 值(3.8 Oe)和 Mr 值(0.45 emu g-1)低。因此,设计和开发的 900°C 退火 Co35Cr5Fe10Ni30Ti5Al15 HEA 由于具有高 Ms 值和低 Mr 值,可进一步用于磁开关应用。
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引用次数: 0
Synthesis, morphological and optical properties impact on transition metal ion (Co and Mn)-doped barium strontium titanate (BST) ferroelectric ceramics towards enhanced optoelectronic device applications 掺杂过渡金属离子(钴和锰)的钛酸锶钡(BST)铁电陶瓷的合成、形貌和光学特性对增强光电器件应用的影响
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-23 DOI: 10.1007/s12034-024-03314-0
Mikanshi Chaudhary, Shilpi Jindal, Sheela Devi

Barium strontium titanate (BST) is a perovskite material, which is used directly in various applications including thermistors, electromechanical actuators, sensors and ceramic capacitors. Here, we have investigated the impact of dopant (Mn and Co) on synthesized BST nanoparticles and its morphological, structural, vibrational and optical properties have been investigated through scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), FTIR and Raman spectroscopies. SEM image showed the nearly spherical grain for pure BST and doped (Mn and Co) BST samples. The estimated particles were strongly influenced by different dopants, in addition, Mn-doped BST showed maximum grain growth for pure and Co-doped BST samples. XRD patterns have been employed to investigate the microstructural parameters (phase, lattice, crystallite size, strain, dislocation density, etc.). The crystallite sizes have been estimated using the Scherrer formula, showing maximum crystallite size for Mn-doped BST ceramics. Recorded FTIR spectra showed the transmission peak, which is centred at wavenumber of 470 cm−1 (pure BST), was shifted to 1250 cm−1 with Mn-doped BST. Raman spectra exhibited the increased number of modes from pure BST to Mn-doped BST sample. PL showed the emissions bands, which were observed at 602–659 nm. Here, the peak shifted towards higher wavelength from pure BST to Mn-doped BST (red shifting from pure to Mn-doped BST). It revealed that the prepared samples can be employed as suitable photoluminar material.

钛酸锶钡(BST)是一种包晶材料,可直接用于热敏电阻、机电致动器、传感器和陶瓷电容器等多种应用领域。在此,我们研究了掺杂剂(锰和钴)对合成的 BST 纳米粒子的影响,并通过扫描电子显微镜(SEM)、X 射线衍射(XRD)、光致发光(PL)、傅立叶变换红外光谱(FTIR)和拉曼光谱研究了其形态、结构、振动和光学特性。扫描电子显微镜图像显示,纯 BST 和掺杂(锰和钴)BST 样品的晶粒接近球形。估计的颗粒受不同掺杂剂的影响很大,此外,与纯 BST 样品和掺 Co 的 BST 样品相比,掺 Mn 的 BST 显示出最大的晶粒增长。XRD 图谱用于研究微观结构参数(相、晶格、晶粒尺寸、应变、位错密度等)。利用舍勒公式估算了结晶尺寸,结果显示掺锰 BST 陶瓷的结晶尺寸最大。记录的傅立叶变换红外光谱显示,透射峰的中心波长为 470 厘米-1(纯 BST),而掺锰 BST 的透射峰则移至 1250 厘米-1。拉曼光谱显示,从纯 BST 到掺锰 BST 样品的模式数有所增加。聚光显示了发射带,在 602-659 纳米波长处观察到。在这里,从纯 BST 到掺锰 BST,峰值向更高波长移动(从纯 BST 到掺锰 BST 的红色移动)。这表明制备的样品可用作合适的光致发光材料。
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引用次数: 0
Electronic, electrical and magnetic behavioural changes of layer by layer deposited Cd0.4Zn0.6S and r-GO composites thin film (Cd0.4Zn0.6S:r-GO) semiconductors 逐层沉积 Cd0.4Zn0.6S 和 r-GO 复合薄膜(Cd0.4Zn0.6S:r-GO)半导体的电子、电学和磁学特性变化
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-23 DOI: 10.1007/s12034-024-03302-4
Sekhar Chandra Ray

Cd0.4Zn0.6S:r-GO composite thin film semiconductor is prepared by the process of layer by layer deposition of cadmium zinc sulphide (Cd0.4Zn0.6S) and reduced graphene oxide (r-GO) on Si-substrate by DIP-coating technique. In this process, initially, aqueous solution of Cd0.4Zn0.6S is deposited on Si-substrate (Cd0.4Zn0.6S/Si) and baked at 500°C temperature, then, aqueous solution of r-GO is deposited on (Cd0.4Zn0.6S/Si) and baked at the same temperature to fabricate (r-GO/Cd0.4Zn0.6S/Si) composite thin film semiconductors. Structural/electronic/electrical/magnetic properties of (Cd0.4Zn0.6S:r-GO)/Si composite thin film semiconductor is enhanced in the vicinity of interfacial defects, impurities, density of states with exchange of metallic/non-metallic ions (Cd2+/Zn2+)/(S2−, SO32−) along with the incorporation of different O-functional radicals that immigrate from r-GO. It is expected that the Cd0.4Zn0.6S:r-GO composite thin film semiconductor is capable of providing future promising optoelectronic as well as magnetic device-based applications.

硫化镉锌(Cd0.4Zn0.6S)和还原型氧化石墨烯(r-GO)通过 DIP 涂层技术在硅基底上逐层沉积,制备出 Cd0.4Zn0.6S:r-GO 复合薄膜半导体。在此过程中,首先在硅基板(Cd0.4Zn0.6S/Si)上沉积 Cd0.4Zn0.6S 的水溶液并在 500°C 温度下烘烤,然后在(Cd0.4Zn0.6S/Si)上沉积 r-GO 的水溶液并在相同温度下烘烤,从而制造出(r-GO/Cd0.4Zn0.6S/Si)复合薄膜半导体。(Cd0.4Zn0.6S:r-GO)/硅复合薄膜半导体的结构/电子/电气/磁性能在界面缺陷、杂质、金属/非金属离子(Cd2+/Zn2+)/(S2-、SO32-)交换态密度以及从 r-GO 中移入的不同 O 功能基的作用下得到增强。预计 Cd0.4Zn0.6S:r-GO 复合薄膜半导体能够在未来提供前景广阔的光电和磁性器件应用。
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引用次数: 0
Phytochemically modified copper oxide-doped yttrium oxide nanoparticles for antibacterial, photocatalytic and ultralow limit biomarker detection applications 用于抗菌、光催化和超低限生物标记物检测的植物化学修饰氧化铜掺杂氧化钇纳米粒子
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-18 DOI: 10.1007/s12034-024-03321-1
Sathish Kumar Somu, Powrnika Selvakumar, Sri Vanaja Swaminathan, Soumyajit Ghosh, Tanay Kundu

Sustainable production of multifunctional nanomaterials is a key challenge for their widespread use. Phytochemical-assisted synthesis provides an environmentally benign route of nanoparticle modifications towards desired applications. Herein, Catharanthus roseus (CR) leaves extract has been used as a phytochemical modifier for copper oxide-doped yttrium oxide nanoparticles (CuO/Y2O3 NPs). The composition, structure, morphology and functional groups of CuO/Y2O3 NPs have been extensively modulated via green synthesis. The excellent antibacterial activities against gram-positive (Staphylococcus aureus) and gram-negative (Escherichia coli) pathogens suggest an increasing rate of antibacterial behaviour. Besides, the sheet-like morphology of CuO/Y2O3 NPs promotes photocatalytic activities by methylene blue, phenol and methyl orange degradation under sunlight with rates of 0.0203, 0.0152 and 0.0167 min−1. Most importantly, CuO/Y2O3 NPs facilitate low oxidation peak potential (−0.58 V), extended frequency linear range (1–300 nM), and ultralow detection limit (up to 0.58 nM) for an important biomarker threonine, which is the best among any nanomaterials reported till date. Such achievement paved the way for sustainable nanomaterial modifications towards multifunctionality.

多功能纳米材料的可持续生产是其广泛应用所面临的关键挑战。植物化学辅助合成为纳米粒子的改性提供了一条对环境无害的途径,以实现所需的应用。在此,Catharanthus roseus(CR)叶提取物被用作氧化铜掺杂氧化钇纳米粒子(CuO/Y2O3 NPs)的植物化学改性剂。通过绿色合成,CuO/Y2O3 NPs 的组成、结构、形态和官能团都得到了广泛的调节。其对革兰氏阳性(金黄色葡萄球菌)和革兰氏阴性(大肠杆菌)病原体的卓越抗菌活性表明,其抗菌性能正在不断提高。此外,CuO/Y2O3 NPs 的片状形态促进了光催化活性,在阳光下降解亚甲基蓝、苯酚和甲基橙的速率分别为 0.0203、0.0152 和 0.0167 min-1。最重要的是,CuO/Y2O3 NPs 具有氧化峰电位低(-0.58 V)、频率线性范围宽(1-300 nM)、对重要生物标志物苏氨酸的检测限超低(高达 0.58 nM)等特点,是迄今为止所报道的纳米材料中最好的。这一成果为纳米材料的可持续多功能改性铺平了道路。
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引用次数: 0
Effect of different heat-treatment processes on corrosion resistance of 17-4PH steel 不同热处理工艺对 17-4PH 钢耐腐蚀性的影响
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-18 DOI: 10.1007/s12034-024-03300-6
Xiaoqin Chen, Xiaofei Qin, Yue Li, Wenjia Cheng, Haonan Jin, Quan Li

The heat-treatment process exerts a substantial influence on both the quantity and morphology of reversed austenite in 17-4PH stainless steel. In this study, the effects of different ageing treatment methods on the microstructure and corrosion resistance of the steel were investigated. Through the observation of microscopic morphology, it was found that adjustment and ageing treatment and double ageing treatment were more conducive to the migration of elements in the steel than single ageing treatment, and they also improved the microstructure. In addition to improving the uniformity of alloy element distribution, uniformity also controls the reversed austenite content. By controlling the content and distribution of reversed austenite, the stability of the corrosion film formed at the interface can be improved, thereby improving the corrosion resistance of stainless steel. The stainless steel, after adjustment treatment and ageing treatment, has better corrosion resistance. The electrochemical corrosion resistance in a high-temperature and high-pressure underground environment was evaluated based on parameters including passivation current density and passivation potential. The results revealed a significant improvement of 50.5% in electrochemical corrosion resistance and a remarkable increase of 45.96% in pitting corrosion resistance. Furthermore, the FeCl3 pitting test demonstrated a substantial decrease of 63.16% in pitting density and a reduction of 27.96% in the uniform corrosion rate.

热处理过程对 17-4PH 不锈钢中反转奥氏体的数量和形态都有很大影响。本研究探讨了不同时效处理方法对钢的微观结构和耐腐蚀性能的影响。通过观察微观形态发现,调整时效处理和双时效处理比单时效处理更有利于钢中元素的迁移,同时也改善了微观结构。除了改善合金元素分布的均匀性,均匀性还能控制反转奥氏体含量。通过控制反转奥氏体的含量和分布,可以提高界面上形成的腐蚀膜的稳定性,从而提高不锈钢的耐腐蚀性。经过调整处理和时效处理的不锈钢具有更好的耐腐蚀性。根据钝化电流密度和钝化电位等参数,对高温高压地下环境中的电化学耐腐蚀性能进行了评估。结果表明,耐电化学腐蚀性能明显提高了 50.5%,耐点蚀性能显著提高了 45.96%。此外,FeCl3 点蚀测试表明,点蚀密度大幅降低了 63.16%,均匀腐蚀速率降低了 27.96%。
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引用次数: 0
Positron effective mass and positronium work function in ZnxCd1−xS ZnxCd1-xS 中的正电子有效质量和正电子功函数
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-14 DOI: 10.1007/s12034-024-03311-3
Abdelaziz Gassoumi, Nadir Bouarissa

Electron and positron chemical potentials, positron affinity and bulk lifetime, positronium work function and positron effective mass have been computed for ZnxCd1−xS using a pseudo-potential approach within the virtual crystal approximation (VCA) and the independent particle model. A correction to VCA is included taking into consideration the disorder effect. This has permitted the computation of the positron affinity to separate materials of interest. The performances indicated that the positron annihilates differently in CdS than in ZnS. The bulk lifetime of positron has been obtained as 241.17 ps for CdS and 215.47 ps for ZnS. Hence, it decreases when going from CdS to ZnS. The positronium work function increases from 2.245 to 3.08 eV when augmenting the composition x from 0 to 1, indicating that only fewer positronium atoms are figured in a specimen surface and ejected for the vacuum. The positron effective mass augments from 0.96 to 1.34 m0 when going from CdS to ZnS materials. The details collected from the assisted investigation are of a former significance for an ameliorate accordance of positron annihilation in ZnxCd1−xS.

利用虚拟晶体近似(VCA)和独立粒子模型中的伪电势方法,计算了 ZnxCd1-xS 的电子和正电子化学势、正电子亲和力和体积寿命、正电子功函数和正电子有效质量。考虑到无序效应,对 VCA 进行了修正。这使得计算正电子亲和力成为可能。结果表明,正电子在 CdS 和 ZnS 中的湮灭方式不同。正电子在 CdS 和 ZnS 中的寿命分别为 241.17 ps 和 215.47 ps。因此,从 CdS 到 ZnS 的正电子寿命会缩短。当成分 x 从 0 增加到 1 时,正电子功函数从 2.245 eV 增加到 3.08 eV,这表明只有较少的正电子原子会在试样表面形成并喷射到真空中。从 CdS 到 ZnS 材料,正电子有效质量从 0.96 m0 增加到 1.34 m0。从辅助研究中收集到的细节对于改善 ZnxCd1-xS 中正电子湮灭的一致性具有重要意义。
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引用次数: 0
Formation and properties of silicon vacancies in MPCVD-grown polycrystalline diamond MPCVD 生长的多晶金刚石中硅空位的形成和特性
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-14 DOI: 10.1007/s12034-024-03284-3
Rahul Raj, K G Pradeep, M S Ramachandra Rao

This study is aimed to have an understanding of the formation of silicon vacancy (SiV) colour centres in diamond during thin film growth of diamond in microwave plasma CVD reactor. The study focusses on different sources of silicon impurities in the chamber and the possibility of controlling the formation of SiV during growth for various applications. Diamond thin films were grown on different substrates and their photoluminescence (PL) spectra were analysed to understand the role of substrate material and residual silicon in the chamber for the formation of SiVs. The predominant contribution to SiV formation was found to be the residual silicon in the chamber originating from the quartz components exposed to the plasma. In the films grown on silicon substrate, there is also substrate contribution to the PL signal. Controlling the formation of SiVs in polycrystalline diamond can pave the way to optically integrate SiVs to different photonic structures.

本研究旨在了解金刚石在微波等离子体化学气相沉积反应器中进行薄膜生长时,金刚石中硅空位(SiV)色心的形成情况。研究的重点是反应腔中硅杂质的不同来源,以及在生长过程中控制硅空位形成的可能性,以满足各种应用的需要。研究人员在不同的基底上生长了金刚石薄膜,并分析了它们的光致发光(PL)光谱,以了解基底材料和腔室中的残留硅在 SiVs 形成过程中的作用。研究发现,对 SiV 形成起主要作用的是腔室中的残余硅,这些残余硅来自暴露在等离子体中的石英组件。在硅衬底上生长的薄膜中,也有衬底对聚光信号的贡献。控制多晶金刚石中 SiV 的形成可以为将 SiV 光学集成到不同的光子结构中铺平道路。
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引用次数: 0
Facile strategy to protect material surface using peelable film from prevulcanized rubber latex 使用预硫化橡胶胶乳可剥离薄膜保护材料表面的简便策略
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-13 DOI: 10.1007/s12034-024-03304-2
Yaowaret Maiket, Rungsima Yeetsorn, Waritnan Wanchan, Sunanta Chuayprakong, Thitinun Ungtrakul, Mesum Abbas, Edmund Haberstroh

This study introduces a method for producing environmentally friendly peelable film using prevulcanized rubber latex, offering a simple and cost-effective solution capable of covering complex shapes. The synthesis investigation explores the relationship between conventional rubber formulations and the film’s performance, highlighting the significance of selecting appropriate chemicals to improve functionality. Key considerations for selecting the latex compound formulation include the solution's properties, particularly focussing on flow behaviour and coating time, as well as the mechanical properties, fire resistance, peel ability and durability of the resulting film under challenging conditions. The primary investigation into the impact of the zinc diethyldithiocarbamate : sulphur (ZDEC : S) ratio on crosslink density provides insight into rheological and mechanical properties. Furthermore, the addition of phenol, 4-methyl-, reaction products with dicyclopentadiene and isobutene (CPL) as an antioxidant improves heat resistance and oxygen tolerance. The remarkable versatility of peelable film allows for its application through various methods, including sagging (1–10 s–1), painting and spraying (10–100 s–1), effectively protecting against dust, scratches and temperatures exceeding 200°C. Particularly noteworthy are its low peel force of 0.139 N, 44 mm removal path and 2-month service life. The findings from testing the crucial properties of the manufactured films, which meets industrial standards, indicate a pathway to produce environmentally sustainable products, with a strong potential for further advancement towards commercial production.

本研究介绍了一种使用预硫化橡胶胶乳生产环保型可剥离薄膜的方法,提供了一种能够覆盖复杂形状的简单而经济的解决方案。合成研究探讨了传统橡胶配方与薄膜性能之间的关系,强调了选择合适的化学品来提高功能性的重要性。选择胶乳化合物配方的主要考虑因素包括溶液的性能,特别是流动性和涂覆时间,以及机械性能、耐火性、剥离能力和所制成薄膜在挑战性条件下的耐用性。二乙基二硫代氨基甲酸锌:硫(ZDEC:S)的比例对交联密度的影响这一主要调查提供了对流变和机械性能的深入了解。此外,添加苯酚、4-甲基-、与双环戊二烯和异丁烯的反应产物(CPL)作为抗氧化剂可提高耐热性和耐氧性。可剥离薄膜具有显著的多功能性,可通过各种方法使用,包括下垂(1-10 秒-1)、喷漆和喷涂(10-100 秒-1),有效防止灰尘、划痕和超过 200°C 的温度。尤其值得一提的是,它的剥离力低至 0.139 N,剥离路径为 44 mm,使用寿命长达 2 个月。对符合工业标准的薄膜关键性能的测试结果表明,这是一条生产环境可持续产品的途径,具有进一步推进商业化生产的巨大潜力。
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引用次数: 0
Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices 无铅无机双卤化物过氧化物基存储器件中的双极电阻开关特性
IF 1.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-12 DOI: 10.1007/s12034-024-03286-1
Susmita Das, Prabir Kumar Haldar, Pranab Kumar Sarkar

Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs2SnI6) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs2SnI6 material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs2SnI6 perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs2SnI6/ITO-PET memory device, we used Cs2SnI6 film as a switching layer and the device exhibits bipolar RS characteristics.

由于对高密度数据存储的需求日益增长,基于双卤化物包晶的电阻式随机存取存储器(RRAM)近来已成为下一代光电存储器应用领域最前沿的有前途的候选材料。基于离子运动的快速开关是这类材料的主要特征,在电阻开关(RS)应用中发挥着重要作用。最近,无铅锡基双卤化物过氧化物因其卓越的稳定性、功能性和环保性而被认为是一种有利的材料。在此,我们报告了碘化铯锡(IV)(Cs2SnI6)包晶石的合成。合成的包晶石的 X 射线衍射(XRD)图证实了 Cs2SnI6 材料的形成。晶体学数据证实了纯立方相的形成,在室温下不存在任何其他相。我们还利用紫外可见光(UV)光谱和光致发光(PL)光谱研究了样品的光学特性。在紫外-可见吸收光谱中观察到 580 纳米左右的宽带。样品的光带隙为 1.68 eV。Cs2SnI6 perovskite 在 ~540 nm 处表现出强烈的 PL 发射。在这项工作中,为了制作柔性 Al/Cs2SnI6/ITO-PET 存储器件,我们使用 Cs2SnI6 薄膜作为开关层,该器件表现出双极 RS 特性。
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Bulletin of Materials Science
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