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International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献
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Analysis of the Temperature Dependence of the Capacitance of NiO/Ga2O3 Heterojunction Diodes Using Analytical and PSO Modelling
用解析和PSO模型分析NiO/Ga2O3异质结二极管电容的温度依赖性
IF 1.7
4区 工程技术
Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
International Journal of Numerical Modelling-Electronic Networks Devices and Fields
Pub Date : 2025-08-17
DOI: 10.1002/jnm.70103
Yasmine Senouci, Nouredine Sengouga, Elyes Garoudja, Madani Labed, Abdulaziz Almalki, Mohamed Henini, Yuan Qin, Yuhao Zhang